TW200614503A - - Google Patents

Info

Publication number
TW200614503A
TW200614503A TW93132377A TW93132377A TW200614503A TW 200614503 A TW200614503 A TW 200614503A TW 93132377 A TW93132377 A TW 93132377A TW 93132377 A TW93132377 A TW 93132377A TW 200614503 A TW200614503 A TW 200614503A
Authority
TW
Taiwan
Application number
TW93132377A
Other languages
Chinese (zh)
Other versions
TWI260092B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200614503A publication Critical patent/TW200614503A/zh
Application granted granted Critical
Publication of TWI260092B publication Critical patent/TWI260092B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
TW093132377A 2004-10-20 2004-10-26 Semiconductor device and manufacturing method thereof TWI260092B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/015532 WO2006043323A1 (ja) 2004-10-20 2004-10-20 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200614503A true TW200614503A (cs) 2006-05-01
TWI260092B TWI260092B (en) 2006-08-11

Family

ID=36202748

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093132377A TWI260092B (en) 2004-10-20 2004-10-26 Semiconductor device and manufacturing method thereof

Country Status (2)

Country Link
TW (1) TWI260092B (cs)
WO (1) WO2006043323A1 (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545210B (zh) * 2012-07-13 2015-12-02 中芯国际集成电路制造(上海)有限公司 深度耗尽沟道场效应晶体管及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
JP2700320B2 (ja) * 1988-02-23 1998-01-21 日本電信電話株式会社 半導体装置の製造方法
JPH0282576A (ja) * 1988-09-19 1990-03-23 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JPH05343666A (ja) * 1991-08-30 1993-12-24 Sgs Thomson Microelectron Inc 集積回路トランジスタ
JP3142614B2 (ja) * 1991-10-16 2001-03-07 沖電気工業株式会社 Ｎチャネルｍｏｓｆｅｔの製造方法
JPH1041240A (ja) * 1996-07-25 1998-02-13 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002025972A (ja) * 2000-07-04 2002-01-25 Asahi Kasei Microsystems Kk 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI260092B (en) 2006-08-11
WO2006043323A1 (ja) 2006-04-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees