TWI256420B - Sputter target, barrier film and electronic component - Google Patents

Sputter target, barrier film and electronic component

Info

Publication number
TWI256420B
TWI256420B TW090109586A TW90109586A TWI256420B TW I256420 B TWI256420 B TW I256420B TW 090109586 A TW090109586 A TW 090109586A TW 90109586 A TW90109586 A TW 90109586A TW I256420 B TWI256420 B TW I256420B
Authority
TW
Taiwan
Prior art keywords
sputter target
barrier film
electronic component
alloy
target
Prior art date
Application number
TW090109586A
Other languages
English (en)
Inventor
Yukinobu Suzuki
Takashi Ishigami
Yasuo Kohsaka
Naomi Fujioka
Takashi Watanabe
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TWI256420B publication Critical patent/TWI256420B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7687—Thin films associated with contacts of capacitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
TW090109586A 2000-04-20 2001-04-20 Sputter target, barrier film and electronic component TWI256420B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000119539 2000-04-20

Publications (1)

Publication Number Publication Date
TWI256420B true TWI256420B (en) 2006-06-11

Family

ID=18630502

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090109586A TWI256420B (en) 2000-04-20 2001-04-20 Sputter target, barrier film and electronic component

Country Status (5)

Country Link
US (1) US6750542B2 (zh)
JP (2) JP5065565B2 (zh)
KR (1) KR100504062B1 (zh)
TW (1) TWI256420B (zh)
WO (1) WO2001081650A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7427538B2 (en) * 2002-08-16 2008-09-23 Intel Corporation Semiconductor on insulator apparatus and method
JP3873935B2 (ja) * 2003-06-18 2007-01-31 セイコーエプソン株式会社 強誘電体メモリ素子
KR100633330B1 (ko) * 2004-07-30 2006-10-12 주식회사 하이닉스반도체 반도체 장치의 캐패시터 제조방법
JP4802780B2 (ja) * 2006-03-14 2011-10-26 セイコーエプソン株式会社 強誘電体メモリ装置、強誘電体メモリ装置の製造方法
JP4613857B2 (ja) * 2006-03-14 2011-01-19 セイコーエプソン株式会社 強誘電体メモリ装置、強誘電体メモリ装置の製造方法
KR100842897B1 (ko) * 2007-01-29 2008-07-03 삼성전자주식회사 강유전체 하드디스크드라이브용 강유전체 미디어 구조 및그 제조 방법
JP4320679B2 (ja) * 2007-02-19 2009-08-26 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法
JP5886473B2 (ja) * 2013-03-19 2016-03-16 Ｊｘ金属株式会社 Ｔｉ−Ａｌ合金スパッタリングターゲット
JP5967329B2 (ja) 2014-06-02 2016-08-10 三菱日立ツール株式会社 硬質皮膜、硬質皮膜被覆部材、それらの製造方法、及び硬質皮膜の製造に用いるターゲット及びその製造方法
JP6574714B2 (ja) * 2016-01-25 2019-09-11 株式会社コベルコ科研 配線構造およびスパッタリングターゲット
SG11201808205QA (en) * 2016-03-25 2018-10-30 Jx Nippon Mining & Metals Corp Ti-Nb ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06280009A (ja) * 1993-03-30 1994-10-04 Mitsubishi Materials Corp スパッタリング用ターゲット及びその製造方法
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
JPH06322530A (ja) * 1993-05-10 1994-11-22 Vacuum Metallurgical Co Ltd スパッタリング用ターゲット
JP2901049B2 (ja) * 1994-11-15 1999-06-02 株式会社神戸製鋼所 アークイオンプレーティング用Ａｌ−Ｔｉ合金ターゲット材
JPH116056A (ja) * 1997-06-12 1999-01-12 Toshiba Tungaloy Co Ltd 金属間化合物含有ターゲット、およびこれを用いた硬質被覆部材の製造方法
JP3367600B2 (ja) * 1998-06-08 2003-01-14 シャープ株式会社 誘電体薄膜素子の製造方法
JP2000100755A (ja) * 1998-09-25 2000-04-07 Mitsubishi Materials Corp 半導体装置のバリア膜形成用Ｔｉ−Ａｌ合金スパッタリングターゲット
JP2000273623A (ja) 1999-03-29 2000-10-03 Japan Energy Corp Ｔｉ−Ａｌ合金スパッタリングターゲット
JP4203180B2 (ja) * 1999-05-25 2008-12-24 株式会社神戸製鋼所 Ｔｉ−Ａｌ合金スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
US6750542B2 (en) 2004-06-15
JP5065565B2 (ja) 2012-11-07
US20030116849A1 (en) 2003-06-26
KR20030032937A (ko) 2003-04-26
WO2001081650A1 (fr) 2001-11-01
JP2012072496A (ja) 2012-04-12
JP5487182B2 (ja) 2014-05-07
KR100504062B1 (ko) 2005-07-27

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