TWI255969B - Chemically amplified positive photoresist composition - Google Patents
Chemically amplified positive photoresist compositionInfo
- Publication number
- TWI255969B TWI255969B TW093106520A TW93106520A TWI255969B TW I255969 B TWI255969 B TW I255969B TW 093106520 A TW093106520 A TW 093106520A TW 93106520 A TW93106520 A TW 93106520A TW I255969 B TWI255969 B TW I255969B
- Authority
- TW
- Taiwan
- Prior art keywords
- positive photoresist
- chemically amplified
- photoresist composition
- amplified positive
- resist pattern
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 3
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
- G11B5/3106—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Magnetic Heads (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003070877 | 2003-03-14 | ||
JP2003432686A JP4393861B2 (ja) | 2003-03-14 | 2003-12-26 | 磁性膜のパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200428149A TW200428149A (en) | 2004-12-16 |
TWI255969B true TWI255969B (en) | 2006-06-01 |
Family
ID=32992982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093106520A TWI255969B (en) | 2003-03-14 | 2004-03-11 | Chemically amplified positive photoresist composition |
Country Status (5)
Country | Link |
---|---|
US (1) | US7172848B2 (zh) |
JP (1) | JP4393861B2 (zh) |
GB (1) | GB2415515B (zh) |
TW (1) | TWI255969B (zh) |
WO (1) | WO2004081665A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4322097B2 (ja) * | 2003-11-14 | 2009-08-26 | 東京応化工業株式会社 | El表示素子の隔壁、およびel表示素子 |
JP2006145853A (ja) * | 2004-11-19 | 2006-06-08 | Jsr Corp | 感放射線性樹脂組成物およびメッキ造形物の製造方法 |
JP4205078B2 (ja) * | 2005-05-26 | 2009-01-07 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
JP4937594B2 (ja) * | 2006-02-02 | 2012-05-23 | 東京応化工業株式会社 | 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法 |
US7587811B2 (en) | 2006-04-25 | 2009-09-15 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a magnetic write head for perpendicular magnetic data recording |
US7498116B2 (en) | 2007-03-30 | 2009-03-03 | Fujifilm Corporation | Resist composition and pattern formation method using the same |
JP4911469B2 (ja) | 2007-09-28 | 2012-04-04 | 富士フイルム株式会社 | レジスト組成物及びこれを用いたパターン形成方法 |
JP5658920B2 (ja) * | 2009-06-23 | 2015-01-28 | 富士フイルム株式会社 | 化学増幅型レジスト組成物、並びに、これを用いたモールドの作成方法、及び、レジスト膜 |
JP5348062B2 (ja) * | 2010-04-23 | 2013-11-20 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料を用いたレジストパターン形成方法及びメッキパターン形成方法 |
US8333898B2 (en) | 2010-12-20 | 2012-12-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a magnetic tape head using a TMR sensor |
US8906594B2 (en) | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
US9012126B2 (en) * | 2012-06-15 | 2015-04-21 | Az Electronic Materials (Luxembourg) S.A.R.L. | Positive photosensitive material |
WO2017057226A1 (ja) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物 |
JP6655628B2 (ja) * | 2015-11-05 | 2020-02-26 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5250395A (en) * | 1991-07-25 | 1993-10-05 | International Business Machines Corporation | Process for imaging of photoresist including treatment of the photoresist with an organometallic compound |
US5198402A (en) * | 1991-10-18 | 1993-03-30 | Hitachi Chemical Company Ltd. | Aryl triflate compound, radiologically acid producing agent, radiologically acid producing agent system, and radiosensitive composition |
JPH05204157A (ja) * | 1992-01-29 | 1993-08-13 | Japan Synthetic Rubber Co Ltd | 感放射線性樹脂組成物 |
JPH0683058A (ja) * | 1992-09-04 | 1994-03-25 | Japan Synthetic Rubber Co Ltd | 化学増幅系レジスト組成物 |
JP3503976B2 (ja) * | 1993-01-14 | 2004-03-08 | 株式会社東芝 | パターン形成方法 |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
JPH0784364A (ja) * | 1993-09-10 | 1995-03-31 | Matsushita Electric Ind Co Ltd | レジスト組成物及びこれを用いた微細パターン形成方法 |
EP0675410B1 (en) * | 1994-03-28 | 1999-08-04 | Wako Pure Chemical Industries Ltd | Resist composition for deep ultraviolet light |
JP2847479B2 (ja) * | 1994-03-28 | 1999-01-20 | 和光純薬工業株式会社 | 遠紫外線用レジスト組成物及びこれを用いた微細パターン形成方法 |
JP3579946B2 (ja) * | 1995-02-13 | 2004-10-20 | Jsr株式会社 | 化学増幅型感放射線性樹脂組成物 |
US7147983B1 (en) * | 1996-10-07 | 2006-12-12 | Shipley Company, L.L.C. | Dyed photoresists and methods and articles of manufacture comprising same |
JP3627465B2 (ja) * | 1997-08-15 | 2005-03-09 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6037107A (en) * | 1997-08-28 | 2000-03-14 | Shipley Company, L.L.C. | Photoresist compositions |
JP3955384B2 (ja) * | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | 化学増幅型レジスト組成物 |
TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
WO2000010056A1 (en) * | 1998-08-14 | 2000-02-24 | Shipley Company, L.L.C. | Photoacid generators and photoresists comprising same |
JP4253427B2 (ja) * | 2000-09-19 | 2009-04-15 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP2002100536A (ja) | 2000-09-26 | 2002-04-05 | Nichicon Corp | アルミニウム電解コンデンサの駆動用電解液 |
JP2002110536A (ja) * | 2000-10-05 | 2002-04-12 | Tdk Corp | レジストパターン、レジストパターンの作製方法、薄膜のパターニング方法、及びマイクロデバイスの製造方法 |
JP4045982B2 (ja) * | 2002-03-08 | 2008-02-13 | Jsr株式会社 | 感放射線性樹脂組成物 |
-
2003
- 2003-12-26 JP JP2003432686A patent/JP4393861B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-11 GB GB0518228A patent/GB2415515B/en not_active Expired - Fee Related
- 2004-03-11 TW TW093106520A patent/TWI255969B/zh not_active IP Right Cessation
- 2004-03-11 US US10/548,843 patent/US7172848B2/en not_active Expired - Lifetime
- 2004-03-11 WO PCT/JP2004/003162 patent/WO2004081665A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
GB2415515A (en) | 2005-12-28 |
US20060194140A1 (en) | 2006-08-31 |
JP4393861B2 (ja) | 2010-01-06 |
GB0518228D0 (en) | 2005-10-19 |
JP2004302434A (ja) | 2004-10-28 |
GB2415515B (en) | 2006-07-12 |
US7172848B2 (en) | 2007-02-06 |
WO2004081665A1 (ja) | 2004-09-23 |
TW200428149A (en) | 2004-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |