TWI255969B - Chemically amplified positive photoresist composition - Google Patents

Chemically amplified positive photoresist composition

Info

Publication number
TWI255969B
TWI255969B TW093106520A TW93106520A TWI255969B TW I255969 B TWI255969 B TW I255969B TW 093106520 A TW093106520 A TW 093106520A TW 93106520 A TW93106520 A TW 93106520A TW I255969 B TWI255969 B TW I255969B
Authority
TW
Taiwan
Prior art keywords
positive photoresist
chemically amplified
photoresist composition
amplified positive
resist pattern
Prior art date
Application number
TW093106520A
Other languages
English (en)
Other versions
TW200428149A (en
Inventor
Hiroshi Shimbori
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200428149A publication Critical patent/TW200428149A/zh
Application granted granted Critical
Publication of TWI255969B publication Critical patent/TWI255969B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G11B5/3106Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Magnetic Heads (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093106520A 2003-03-14 2004-03-11 Chemically amplified positive photoresist composition TWI255969B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003070877 2003-03-14
JP2003432686A JP4393861B2 (ja) 2003-03-14 2003-12-26 磁性膜のパターン形成方法

Publications (2)

Publication Number Publication Date
TW200428149A TW200428149A (en) 2004-12-16
TWI255969B true TWI255969B (en) 2006-06-01

Family

ID=32992982

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106520A TWI255969B (en) 2003-03-14 2004-03-11 Chemically amplified positive photoresist composition

Country Status (5)

Country Link
US (1) US7172848B2 (zh)
JP (1) JP4393861B2 (zh)
GB (1) GB2415515B (zh)
TW (1) TWI255969B (zh)
WO (1) WO2004081665A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322097B2 (ja) * 2003-11-14 2009-08-26 東京応化工業株式会社 El表示素子の隔壁、およびel表示素子
JP2006145853A (ja) * 2004-11-19 2006-06-08 Jsr Corp 感放射線性樹脂組成物およびメッキ造形物の製造方法
JP4205078B2 (ja) * 2005-05-26 2009-01-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4937594B2 (ja) * 2006-02-02 2012-05-23 東京応化工業株式会社 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
US7587811B2 (en) 2006-04-25 2009-09-15 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic write head for perpendicular magnetic data recording
US7498116B2 (en) 2007-03-30 2009-03-03 Fujifilm Corporation Resist composition and pattern formation method using the same
JP4911469B2 (ja) 2007-09-28 2012-04-04 富士フイルム株式会社 レジスト組成物及びこれを用いたパターン形成方法
JP5658920B2 (ja) * 2009-06-23 2015-01-28 富士フイルム株式会社 化学増幅型レジスト組成物、並びに、これを用いたモールドの作成方法、及び、レジスト膜
JP5348062B2 (ja) * 2010-04-23 2013-11-20 信越化学工業株式会社 化学増幅ポジ型レジスト材料を用いたレジストパターン形成方法及びメッキパターン形成方法
US8333898B2 (en) 2010-12-20 2012-12-18 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a magnetic tape head using a TMR sensor
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
US9012126B2 (en) * 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
WO2017057226A1 (ja) * 2015-09-30 2017-04-06 富士フイルム株式会社 パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物
JP6655628B2 (ja) * 2015-11-05 2020-02-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
US5198402A (en) * 1991-10-18 1993-03-30 Hitachi Chemical Company Ltd. Aryl triflate compound, radiologically acid producing agent, radiologically acid producing agent system, and radiosensitive composition
JPH05204157A (ja) * 1992-01-29 1993-08-13 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH0683058A (ja) * 1992-09-04 1994-03-25 Japan Synthetic Rubber Co Ltd 化学増幅系レジスト組成物
JP3503976B2 (ja) * 1993-01-14 2004-03-08 株式会社東芝 パターン形成方法
JPH07140666A (ja) * 1993-06-04 1995-06-02 Internatl Business Mach Corp <Ibm> マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物
JPH0784364A (ja) * 1993-09-10 1995-03-31 Matsushita Electric Ind Co Ltd レジスト組成物及びこれを用いた微細パターン形成方法
EP0675410B1 (en) * 1994-03-28 1999-08-04 Wako Pure Chemical Industries Ltd Resist composition for deep ultraviolet light
JP2847479B2 (ja) * 1994-03-28 1999-01-20 和光純薬工業株式会社 遠紫外線用レジスト組成物及びこれを用いた微細パターン形成方法
JP3579946B2 (ja) * 1995-02-13 2004-10-20 Jsr株式会社 化学増幅型感放射線性樹脂組成物
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
JP3627465B2 (ja) * 1997-08-15 2005-03-09 Jsr株式会社 感放射線性樹脂組成物
US6037107A (en) * 1997-08-28 2000-03-14 Shipley Company, L.L.C. Photoresist compositions
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Azエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
WO2000010056A1 (en) * 1998-08-14 2000-02-24 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP4253427B2 (ja) * 2000-09-19 2009-04-15 富士フイルム株式会社 ポジ型レジスト組成物
JP2002100536A (ja) 2000-09-26 2002-04-05 Nichicon Corp アルミニウム電解コンデンサの駆動用電解液
JP2002110536A (ja) * 2000-10-05 2002-04-12 Tdk Corp レジストパターン、レジストパターンの作製方法、薄膜のパターニング方法、及びマイクロデバイスの製造方法
JP4045982B2 (ja) * 2002-03-08 2008-02-13 Jsr株式会社 感放射線性樹脂組成物

Also Published As

Publication number Publication date
GB2415515A (en) 2005-12-28
US20060194140A1 (en) 2006-08-31
JP4393861B2 (ja) 2010-01-06
GB0518228D0 (en) 2005-10-19
JP2004302434A (ja) 2004-10-28
GB2415515B (en) 2006-07-12
US7172848B2 (en) 2007-02-06
WO2004081665A1 (ja) 2004-09-23
TW200428149A (en) 2004-12-16

Similar Documents

Publication Publication Date Title
TWI255969B (en) Chemically amplified positive photoresist composition
WO2003017002A1 (fr) Composition permettant la formation d&#39;un film anti-reflechissant destine a etre utilise en lithographie
EP1736477A4 (en) FLUOROUS CONNECTION, WASTE WASTE COMPOSITION AND THIN FILM
ATE310965T1 (de) Polyvinylalkohol-folie und polarisations-folie
CA2347945A1 (en) Multilayered photosensitive material for flexographic printing plate
EP1188806A3 (en) Photocurable aqueous resin composition and ink
TW200703453A (en) Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same
WO2003075096A3 (de) Refraktives projektionsobjektiv
TW200641558A (en) Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
TW200707083A (en) Method for forming a lithograohy pattern
MXPA04005950A (es) Articulo absorbente.
GB0515999D0 (en) Security device
TW200715044A (en) Photomask blank, photomask and fabrication method thereof
AU2003233595A1 (en) Peptide derivatives, and their use for the synthesis of silicon-based composite materials
WO2003001249A3 (en) Modulating photoreactivity in a cell
EP1593730A4 (en) SEMICONDUCTOR APPLICATIONS AND MANUFACTURING METHOD THEREFOR
EP1126322A3 (en) Fluorine-containing polymers, resist compositions and patterning process
HN1997000098A (es) Ccompuesto de indol 2, 3 sustituido como agentes antiinflamatorios y analgesicos.
TW200628976A (en) Photosensitive composition for forming shading film and black matrix formed from photosensitive composition
ATE369256T1 (de) Flachdruckplattenvorläufer und flachdruckverfahren.
EP1164435A4 (en) PHOTOSENSITIVE POLYSILAZANE COMPOSITION AND METHOD FOR FORMING A THIN LAYER OF PATTERNED POLYSILAZANE
WO2004006016A3 (en) Mask and manufacturing method using mask
FR2847346B1 (fr) Procede d&#39;obtention d&#39;un marquage sur une lentille ophtalmique a basse energie de surface
TW200619862A (en) Light source for exposure
ATE370204T1 (de) Tintenzusammensetzung

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent