TWI253697B - Method for fabricating a flip chip package - Google Patents

Method for fabricating a flip chip package Download PDF

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Publication number
TWI253697B
TWI253697B TW094111178A TW94111178A TWI253697B TW I253697 B TWI253697 B TW I253697B TW 094111178 A TW094111178 A TW 094111178A TW 94111178 A TW94111178 A TW 94111178A TW I253697 B TWI253697 B TW I253697B
Authority
TW
Taiwan
Prior art keywords
flip chip
insulating layer
substrate
packaging method
connection pads
Prior art date
Application number
TW094111178A
Other languages
English (en)
Other versions
TW200636881A (en
Inventor
Shih-Ping Hsu
Original Assignee
Phoenix Prec Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Phoenix Prec Technology Corp filed Critical Phoenix Prec Technology Corp
Priority to TW094111178A priority Critical patent/TWI253697B/zh
Priority to US11/162,328 priority patent/US7453155B2/en
Priority to JP2006020179A priority patent/JP2006295127A/ja
Application granted granted Critical
Publication of TWI253697B publication Critical patent/TWI253697B/zh
Publication of TW200636881A publication Critical patent/TW200636881A/zh

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Description

!253697 九、發明說明： ' 【發明所屬之技術領域】 ’ 本發明係提供一種覆晶封裝的製作方法，尤指一種晶片 接者於覆晶基板的製作方法。 φ 【先前技術】 近年來，隨著筆記型電腦、個人資料助理（pDA)與行 動電話等攜帶式機器的小型化與高功能化，以及中央處理 單元(CPU)與e己丨思體模組(mem〇ry m〇(juie)等之功能複雜 化，使半導體製程不僅需朝向高積集度發展， 也必需朝向 巧畨度(high density)封裝發展，於是各種輕、薄、短、々 的封裝體便不斷地被開發出來。而覆晶(flip chip，FC)封裝 春、-構與傳統的封裝結構相較，具有散熱快、低電感、多端 子以及晶片尺寸大小的優點，故應用範圍亦因為這些優點 不斷地被擴展，亚且在未來的幾年内之使用量將成數倍成 長。 請參照第1圖1 1圖為習知-覆晶封裝(flipchip package，FC package)結構3〇之剖面示意圖。如第i圖所， 不’習知覆晶封裝結構3〇包含有一晶粒(die)32，晶粒32 6 1253697 具有一主動表面（active surface) 34以及複數個接合墊（未_ 不）設置於主動表面34之上。覆晶封裝結構3〇另包含有〜 基板(substrate) 36，該基板於上下表面具有一絕緣保護層 38、45，基板36係為一多層板，絕緣保護層38具有複數 個開孔以顯露基板之凸塊鲜墊(bump pad)。 封裝時晶粒32之主動表面34係朝向基板36之絕緣保 濩層38，且各接合墊（未顯示）的位置係與各凸塊銲墊（未顯 示）的位置相對應。複數個銲料凸塊(solder bump) 42分別設 置於各接合墊（未顯示）與各凸塊銲墊（未顯示）之間，以提供 各接合墊（未顯示）至各凸塊銲墊（未顯示）的物理連接。而通 常在各接合墊（未顯示）與各銲料凸塊42之間另包含有一凸 塊介金屬層（under bump metallurgy layer，未顯示），視製程 與元件設計的需要，可用來作為接合層、阻障層、濕潤層 或是導電層。同時，晶粒32之中包含有至少一超大型積體 電路(very large scale integration, VLSI)或是至少一極超大 型積體電路(ultra large scale integration，ULSI)等級以上之 矛貝體電路，也是透過上述各接合墊（未顯示）、各銲料凸塊 42以及各凸塊鮮墊（未顯示）而被電性連接至基板％。 此外’覆晶封裝結構30中另包含有一底部密封材料 1253697 (underfill material)層44，底部密封材料層44係填滿基板 36與晶粒32之間的空隙，以保護覆晶封裝結構3〇免受外 ^ 界環境的影響，並消除銲料凸塊42連接處的應力（stress)。 ' 在基板之絕緣保護層45具有複數個開孔，以顯露出基板之 錫球銲墊(solder ball pad) 46,該封裝結構30並具有複數個 刀別位於各錫球銲墊46下方之銲錫球(s〇ider balls) 48。 表亍、上所述，習知技術之基板需需經過多次回焊製成，對 產品之可靠度是一種嚴酷的考驗。尤其是在無鉛製成中常 會發生基板與底部密封材料層因熱膨脹係數…丁扮不匹配 而分離或造成基板本身斷裂（crack)等現象，無法保證產品 之穩定品質。除此之外，習知技術另一缺點乃在於基板出 貝係以單顆出‘方式運送到封裝場進行封裝，然後封裝廢 • 再運用單顆方式進行後續封裝，除設備投資昂貴之外，產 能利用低且相對成本高，要大量導入量產是一非常大的阻 力。 【發明内容】 口此本龟明之主要目的在於提供一種覆晶封裝的製作 方法，以克服上述之限制及技術瓶頸。 1253697 g根據本發明之專利範财所揭露之覆晶封裝方法，係先 提供一基板，且該基板具有複數個Ic基板單元，且各ic 基板早70中設置有至少—金屬内連線層，*基板單元表 +面設置有複數個連接墊。隨後形成-圖案化之絕緣層，覆 蓋於該基板與該等連接墊上，並暴露出各該連接墊之部分 上表面而分別形成-開口。之後分別於各該開口内填入一 導電材料，再提供複數個晶片⑽ip)，且該等晶片之底表面 設置有複數辦電凸塊，藉由_緣層可分雛著(m_t) 5亥等曰曰片於雜1C基板單元表面。最後分㈣基板成複數 個覆晶封裝結構，且各該覆晶封裝結構表面均設置有至少 〆該晶片。其十，形成該絕緣層之方法係先形成一圖案化 且完全烘社第-絕緣層，錢於難板與該等連接塾 上’亚暴露出各該連接墊之部分上表面而分別形成該等開 口，然後再形成一圖案化且僅預烘烤之第二絕緣層，覆蓋 於該第一絕緣層表面並暴露出各該開口，用來當作該基2 與各該晶片之黏著層。 由於本發明係將晶片置於基板表面之預烘烤絕緣層 上，再元成結合及切告彳流程，因此可大幅簡化封裝步驟、 滅少材料使用及避免熱膨脹係數不匹配並確保封筆U質， 以有效達到節省成本及快速量產的目的。 1253697 【實施方式】 請參照第2圖至第8圖，第2圖至第8圖為本發明覆晶 封裝方法之第一實施例的製程示意圖。如第2圖所示，首 先提供一基板60，例如增層基板，且該基板60具有複數 個1C基板單元60a，且各1C基板單元60a中設置有至少一 金屬内連線層（圖中未示），而1C基板單元60a表面設置有 複數個連接墊62。如第3圖所示，接著形成一圖案化之絕 緣層64，覆蓋於基板60與連接墊62上，並暴露出各連接 墊62之部分上表面而分別形成一開口 66。其中，絕緣層 64係為一預烘烤之黏著層，而且構成絕緣層64之材料係 包含有感光性或非感光性之高分子樹脂。除此之外，構成 絕緣層64之材料係選自ABF、芳香族醯胺（Aramid)、聚 丙稀（polypropylene，PP)、聚亞醯胺（polyimide，PI)、苯 環丁稀(Benzocyclobutene，BCB)、液晶聚合物（LCP)、聚 四 乙烯（Polytetrafluoroethylene，PTFE)等之有機高分 子、樹脂或環氧樹脂介電材料。 如第4圖所示，隨後分別於各開口 66内填入一導電材 料68，例如銲錫、銅膏或銀膏等膏狀之金屬材料，作為和 晶片70電性連接之黏著物。如第5、6圖所示，接著提供 複數個晶片（chip) 70，且晶片70之底表面設置有複數個導 10 1253697 电凸塊72’亚將各晶片7〇藉由該絕緣層μ可分別接著 (m〇Unt)於各1C基板單元6〇a表面。其令晶片70之底表面 又可設置有-簡之轉層（圖未示），與紐個導電凸塊 分養於各1C基板單議表面，而不 烤之為著^所揭露之作法。•絕緣層64係為一預烘 =黏耆層’因此在進行接著製程時，各晶片％可受外力 擠壓而約略陷入於絕 製程，用以固化預扭烤9 。之後進行-烘烤—ng) 導電_8/^：_64,並使各連接㈣、各 第7圖料，72軸—舰。然後如 底表*之複數個錫球===基板單一 W如第8圖_，未表面形成複數個輝錫球 構^該各二個覆晶封裝結 8表面均叹置有至少一晶片％ 〇 如弟8圖所示，太旅 含有- IC ㈣露—種覆晶封裝結構78,包 有複數個連接墊62.— 基板早疋咖表面設置 板單元60a與連接墊幻圖木化之、、、巴緣層料，覆蓋於IC基 連接墊62之部分上^，亚分卿成1°以暴露出各 ”以及-晶片7()—導電材料68填於各該開口内 導電凸塊72,藉由該絕且緩亥晶片7〇^底表面設置有複數個 X、巴、、層64可將該晶片7〇接著於該扣 11 1253697 基板單元60a表面。該覆晶封裝結構78另可設置複數個銲 錫球74設置於1C基板單元60a之底表面，以作為其與外 部裝置電性連接用。其中各晶片70之底表面又可包含有一 預供烤黏著層設置於導電凸塊72之間（圖未示），以增加晶 片70與絕緣層64之附著性。 請參照第9圖至第11圖，第9圖至第11圖為本發明覆 晶封裝方法之第二實施例的製程示意圖。如第9圖所示， 首先提供一基板1〇〇，例如增層基板，且該基板100具有 複數個Ic基板單元l〇〇a，且各1C基板單元l〇〇a中亦設置 有至少一金屬内連線層（圖中未示），而1C基板單元l〇〇a 表面設置有複數個連接墊102。接著於各接墊1〇2中央形 成一金屬凸塊104，以用來增加後續導電材料1〇8和連接 塾1〇2之黏著面積以及提昇熱均勻分佈。其中，構成金屬 凸塊104之材料係選自銅、鎳、金、銀、銅、鈀、錫之單 層或多層組合之金屬或錫膏。 如第10圖所示，接著形成一圖案化之絕緣層1〇6，覆蓋 於基板100與連接墊102上，並分別形成一開口以暴露出 各連接墊102之部分上表面。其中，絕緣層ι〇6係為一預 烘烤之黏著層，且構成絕緣層106之材料可為前述感光性 12 1253697 或非感光性之高分子樹脂等材料。如第u圖所示，隨後分 別於各開口内填人-如銲錫、崎或银膏等之金屬導電材 料108，作為和晶片110之電性連接。接著將複數個設置 有複數個導電凸塊m之晶片11G藉由親緣層⑽將晶 片接著於各IC基板單元職表面。除此之外，晶片 no之底表面又可設置有一預烤之黏著層(圖未示)，以將晶 片110接著於各1c基板單元咖表面，而不侷限於本實 施例所揭露之作法。之後進行-烘频程，用以固化預洪 烤之絕緣層刚，並使各連接塾102、各金屬凸塊刚、各 導電材料108以及各導電凸塊112形成良好之鍵結。然後 進行植球製私，以於基板100底表面之複數個锡球婷塾 (未顯示）表面形成複數個銲錫球。最後分割基板100成複 數個後日日封裝結構，且各覆晶封裝結構表面均設置有至少 一晶片110。 請參照第12圖至第15圖，第12圖至第15圖為本發明 覆晶封裝方法之第三實施例的製程示意圖。如第12圖所 示，首先提供一基板80，例如增層基板，且該基板8〇具 有複數個1C基板單元80a，且各1C基板單元80a中亦設置 有至少一金屬内連線層（圖中未示），而各1C基板單元80a 表面設置有複數個連接墊82。如第13圖所示，接著形成 13 1253697 一圖案化之第一絕緣層84,覆蓋於基板80與連接墊82上， 並分別形成開口 88以暴露出連接墊82之部分上表面。隨 後形成一圖案化之第二絕緣層86,覆蓋於該第一絕緣層84 表面，並暴露出各開口 88。其中，值得注意的是，第一絕 緣層84係為一完全烘烤之材料，而第二絕緣層86係為一 預烘烤之材料，用來當作基板80與各晶片之黏著層。此 外，第一絕緣層84以及第二絕緣層86可由相同或不同材 料所組成，其可由感光性或非感光性之高分子樹脂構成， 其絕緣層材質係如前所述第一實施例之絕緣層64。 隨後如第14圖所示，分別於各開口 88内填入一導電材 料90，例如銲錫、銅膏或銀膏等膏狀之金屬材料，作為和 晶片92電性連接之黏著物。如第15圖所示，提供複數個 晶片92，且晶片92之底表面設置有複數個導電凸塊94， 之後在進行晶片接著製程時，各晶片92可受外力擠壓而約 略陷入於基板80表面之第二絕緣層86中’而可將晶片92 接著於各1C基板單元80a表面。本實施例是利用晶片92 和基板80上預烘烤之第二絕緣層86接著。之後進行一烘 烤製程，用以固化預烘烤之第二絕緣層86，並使各連接墊 82、各導電材料90以及各導電凸塊94形成良好之鍵結。 當然前述製程中，亦可先於晶片92之底表面形成一經預烘 14 1253697 烤之黏著層（圖中未示），以有效增加後續其與基板表面預 烘烤之第二絕緣層86之固著力。然後進行_植球製程（图 未示）’以於基板80底表面之複數個錫球銲墊（未顯示）表面 形成複數個銲錫球，最後再分割基板80成複數個覆晶封穿 結構，且各覆晶封裝結構表面均設置有至少一晶片92。义 清茶照第16圖至第18圖，第16圖至第18圖為本發明 覆晶封裝方法之第四實施例的製程示意圖。如第Μ圖所 示，首先提供一表面設置複數個連接墊122之基板12〇， 且該基板120具有複數個1C基板單元120a，且各IC基板 單元120a中亦設置有至少一金屬内連線層（圖中未示）。接 著於各連接墊122中央形成一金屬凸塊124，用來增加後 續導電材料130和連接墊122之黏著面積以及提昇熱均句 分佈。隨後如第17圖所示，形成一圖案化之第一絕緣層 126 ’覆盖於基板120與連接塾122上’並分別形成開口以 暴露出連接墊122之部分上表面。然後再形成一圖案化之 第二絕緣層128，覆蓋於該第一絕緣層126表面，並暴露 出各該開口。同樣地，第一絕緣層126係為一完全烘烤之 材料，而第二絕緣層128係為一預烘烤之材料，用來當作 基板120與各晶片132之黏著層，而且第一絕緣層126以 及第二絕緣層128亦可由前述感光性或非感光性之高分子 15 ^^>3697 樹月旨等相同或不同材料所組成。 如第18圖所示，隨後 13〇,作為和晶片m : 填入—導電材料 含有r錫厂 之电性連接。其中導電材料130係包 有、干錫、銅貧或銀膏等 、 數個導電凸塊134/日 再將複數個設置有複 片132接— 之日日片132藉由該絕緣層128可將該晶 n接者於各IC基板單元⑽a表面。除此之外， 2之底表面又可設置有—預烤之黏著層（圖未;曰 片/2接著於各1C基板單元限於本^ __露之作法。之後進行―供烤製程，用簡化職 烤之弟二絕緣層128,並使各連接塾122、各金屬凸塊124、 各導電材料uo以及各導電凸塊134形成良好之鍵結。然 後進行-植球製程（圖未示），以於基板12G下表面之複數 個錫球銲墊(未顯示）表面形成複數個銲錫球。最後再分判 基板120成複數個覆晶封裝結構，且各覆晶封裝結構表面 均設置有至少一晶片132。 如第19圖所示，本發明揭露另一覆晶封裝結構118，包 含有一 1C基板單元120a，且該1C基板單元i2〇a表面設置 有极數個連接墊122，一圖案化之第一絕緣層126，覆莫於 1C基板單元120a輿連接墊122上，並分別形成一開口以 16 1253697 暴露出各連接塾122之部分上表面；以及一圖案化之第一 絕緣層128，覆蓋於第一絕緣層126表面，並暴露出各該 開口； 一導電材料130填於各該開口内中；一晶片132， 且晶片132之底表面設置有複數個導電凸塊134,藉由該 第二絕緣層128可將該晶片132接著於1C基板單元12〇a 表面。該覆晶封裝結構118另可設置複數個銲錫球136於 1C基板單元120a之底表面，以作為其與外部裝置電性連 接用。其中各晶片132之底表面又可包含有一預燦烤黏著 層（圖未示）設置於導電凸塊134之間，以增加晶片132與 弟一絕緣層126及第二絕緣層128之附著性。除此之外， 各連接墊122之部份表面又可包含有一金屬凸塊124，用 以增加導電材料130和各連接墊122之黏著面積。 .綜上所述，本發明係利用晶片上經預烤之黏著層和增層 基板上之完全烘烤之第一絕緣層與預烘烤之第二絕緣層， 以有效增加固著力，進而可使晶片完全貼附黏著於基板， 甚至鑲後於增層基板表面之絕緣層中，而不需再利用一底 部密封材料層填滿基板與晶片之間的空隙。也因為本發明 不需再形成一底部密封材料層並經過多次回蟬製成，故& 有致提昇產品品質及可靠度。此外，本發明在連接處不使 用防焊層（solder mask)以及底部密封材料層的情況下，更可 17 1253697 有效解決材料熱膨脹係數不匹配等問題。 有別於習知技術，本發明係在基板佈線完成後，直接將 晶片壓合於基板表面之預烘烤絕緣層中，完成結合，再進 行切割流程，因此可大幅簡化封裝步驟、減少材料使用及 避免熱膨脹係數不匹配，以確保封裝品質，進而節省成本， 並可提高產能(throughput)。
I 以上所述僅為本發明之較佳實施例，凡依本發明申請 專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範 圍。 【圖式簡單說明】 第1圖為習知覆晶封裝結構之剖面示意圖。 第2圖至第7圖為本發明覆晶封裝方法之第一實施例的製 程不意圖。 第8圖為本發明一第一覆晶封裝結構示意圖。 第9圖至第11圖為本發明覆晶封裝方法之第二實施例的製 程不意圖。 第12圖至第15圖為本發明覆晶封裝方法之第三實施例的 製程示意圖。 18 1253697 第16圖至第18圖為本發明覆晶封裝方法之第四實施例的 製程示意圖。 第19圖為本發明一第二覆晶封裝結構示意圖。
【主要元件符號說明】 30 覆晶封裝結構 32 晶片 34 主動表面 36 基板 38 絕緣保護層 42 銲料凸塊 44 底部密封材料層 45 絕緣保護層 46 錫球鲜藝 48 鲜錫球 60 基板 60a 1C基板單元 62 連接墊 64 絕緣層 66 開口 68 導電材料 70 晶片 72 導電凸塊 74 鲜錫球 78 覆晶封裝結構 80 基板 80a 1C基板單元 82 連接墊 84 第一絕緣層 86 第二絕緣層 88 開口 90 導電材料 · 92 晶片 94 導電凸塊 100 基板 100 a 1C基板單元 102 連接墊 19 1253697 104 金屬凸塊 106 絕緣層 108 導電材料 110 晶片 112 導電凸塊 118 覆晶封裝結構 120 基板 120a 1C基板單元 122 連接塾 124 金屬凸塊 126 第一絕緣層 128 第二絕緣層 130 導電材料 132 晶片 134 導電凸塊 136 鲜錫球
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Claims (1)

1253697 十、申請專利範圍： 1. 一種覆晶封裝方法，包含有： 提供一基板，該基板具有複數個1C基板單元，且各該 1C基板單元表面設置有複數個連接墊； 形成一圖案化之絕緣層，覆蓋於該基板與該等連接墊 上，並分別形成一開口以暴露出各該連接墊之部分上表面； 分別於各該開口内填入一導電材料， 提供複數個晶片（chip)，且該等晶片之底表面設置有複 數個導電凸塊； 接著(mount)該等晶片於該1C基板單元表面；以及 分割該基板成複數個覆晶封裝結構，且各該覆晶封裝 結構表面均設置有至少一該晶片。 2. 如申請專利範圍第1項之覆晶封裝方法，其中該絕緣層 係為一預烘烤黏著層。 3. 如申請專利範圍第1項之覆晶封裝方法，其中在接著該 等晶片於該基板表面時，各該晶片可受外力擠壓而約略陷 入於該預烘烤黏著層中。 21 1253697 4. 如申請專利範圍第1項之覆晶封裝方法，其中該導電材 料係包含有銲錫、銅膏或銀膏等金屬材料。 5. 如申請專利範圍第1項之覆晶封裝方法，其中構成該絕 緣層之材料係包含有感光性或非感光性之高分子樹脂。 6. 如申請專利範圍第1項之覆晶封裝方法，其中各該晶片 _ 之底表面另包含有一預洪烤黏著層設置於談等導電凸塊之 間0 7. 如申請專利範圍第1項之覆晶封裝方法，其中各該連接 墊之部份表面另包含有一金屬凸塊，用以增加該導電材料 和各該連接墊之黏著面積。 8. 如申請專利範圍第7項之覆晶封裝方法，其中構成該等 金屬凸塊之材料係選自銅、鎳、金、銀、銅、鈀、錫之單 層或多層組合之金屬或錫嘗。 9. 一種覆晶封裝方法，包含有： 提供一基板，該基板具有複數個1C基板單元，且各該 1C基板單元表面設置有複數個連接墊； 22 1253697 形成一圖案化之第一絕緣層’覆蓋於該基板與該等連 接墊上，並分別形成該等開口以暴露出各該連接墊之部分 上表面； 形成一圖案化之第二絕緣層，覆蓋於該第一絕緣層表 面，並暴露出各該開口； 於各該開口内填入'一^導電材料， 提供複數個晶片（chip)，且該等晶片之底表面設置有複 數個導電凸塊； 接著(mount)該等晶片於該1C基板單元表面；以及 分割該基板成複數個覆晶封裝結構，且各該覆晶封裝 結構表面均設置有至少一該晶片。 10. 如申請專利範圍第9項之覆晶封裝方法，其中該第一絕 緣層係為一完全烘烤之材料。 11. 如申請專利範圍第9項之覆晶封裝方法，其中該第二絕 緣層於製程中係為一預烘烤之材料，用來當作該基板與各 該晶片之黏著層。 12. 如申請專利範圍第9項之覆晶封裝方法，其中在接著該 等晶片於該基板表面時，各該晶片可受外力擠壓而約略陷 23 1253697 入於該基板表面之該第二絕緣層中。 13. 如申請專利範圍第9項之覆晶封裝方法，其中該第一絕 . 緣層以及第二絕緣層具有相同組成材料。 14. 如申請專利範圍第9項之覆晶封裝方法，其中該第一絕 緣層以及第二絕緣層具有不同組成材料。 15. 如申請專利範圍第9項之覆晶封裝方法，其中該導電材 料係包含有銲錫、銅膏或銀膏等金屬材料。 16. 如申請專利範圍第9項之覆晶封裝方法，另包含有一植 球製程之步驟，用以於未接著有該等晶片之該增層基板表 面形成複數個録錫球(solder bump)。 17. 如申請專利範圍第9項之覆晶封裝方法，其中各該晶片 之底表面另包含有一預烘烤黏著層設置於該等導電凸塊之 . 間。 18.如申請專利範圍第9項之覆晶封裝方法，其中各該連接 墊之部份表面另包含有一金屬凸塊，用以增加該導電材料 24 1253697 和各該連接墊之黏著面積。 19. 如申請專利範圍第18項之覆晶封裝方法，其中構成該 等金屬凸塊之材料係選自銅、鎳、金、銀、銅、鈀、錫之 單層或多層組合之金屬或錫膏。 20. —種覆晶封裝結構，包含有： > 一 1C基板單元，且該1C基板單元表面設置有複數個 連接墊； 一圖案化之絕緣層，覆蓋於該1C基板單元與該等連接 墊上，並分別形成一開口以暴露出各該連接墊之部分上表 面； 一導電材料填於各該開口内中；以及 一晶片（chip)，且該晶片之底表面設置有複數個導電凸 » 塊’猎由該絕緣層將該晶片接者（mount)於該1C基板早元 表面。 21.如申請專利範圍第20項之覆晶封裝結構，其中該導電 材料係包含有銲錫、銅膏或銀膏等金屬材料。 22.如申請專利範圍第22項之覆晶封裝結構，其中該絕緣 25 1253697 層係為一預烘烤黏著層。 23. 如申請專利範圍第20項之覆晶封裝結構，其中構成該 絕緣層之材料係包含有感光性或非感光性之高分子樹脂。 24. 如申請專利範圍第20項之覆晶封裝結構，其中各該晶 片之底表面另包含有一預烘烤黏著層設置於該等導電凸塊 ’之間。 25. 如申請專利範圍第20項之覆晶封裝結構，其中各該連 接塾之部份表面另包含有一金屬凸塊’用以增加該導電材 料和各該連接墊之黏著面積。 26. 如申請專利範圍第25項之覆晶封裝結構，其中構成該 等金屬凸塊之材料係選自銅、鎳、金、銀、銅、鈀、錫之 單層或多層組合之金屬或錫貧。 27. —種覆晶封裝結構，包含有： 一 1C基板單元，且該1C基板單元表面設置有複數個 連接墊； 一圖案化之第一絕緣層，覆蓋於該1C基板單元與該等 26 1253697 連接墊上，並分別形成該等開口以暴露出各該連接墊之部 分上表面； 一圖案化之第二絕緣層，覆蓋於該第一絕緣層表面， 並暴露出各該開口； 一導電材料填於各該開口内中；以及 一晶片（chip) ’且該晶片之底表面設置有複數個導電凸 塊，藉由該第二絕緣層可將該晶片接著（mount)於該1C基 板單元表面。 28. 如申請專利範圍第27項之覆晶封裝結構，其中該導電 材料係包含有銲錫、銅膏或銀膏等金屬材料。 29. 如申請專利範圍第27項之覆晶封裝結構，其中該第一 絕緣層係為一完全烘烤之材料。 30. 如申請專利範圍第27項之覆晶封裝結構，其中該第二 絕緣層係為一預烘烤之材料，用來當作該1C基板單元與各 該晶片之黏者層。 3L如申請專利範圍第27項之覆晶封裝結構，其中該第一 絕緣層以及第二絕緣層係為相同組成材料。 27 1253697 32. 如申請專利範圍第27項之覆晶封裝結構，其中該第一 絕緣層以及第二絕緣層傣為不同組成材料。 33. 如申請專利範圍第27項之覆晶封裝結構，其中各該晶 片之底表面另包含有一預供烤黏著層設置於該等導電凸塊 之間。 • 34.如申請專利範圍第27項之覆晶封裝結構，其中各該連 接墊之部份表面另包含有一金屬凸塊，用以增加該導電材 料和各該連接墊之黏著面積。 35.如申請專利範圍第34項之覆晶封裝結構，其中構成該 等金屬凸塊之材料係選自銅、鎳、金、銀、銅、鈀、錫之 單層或多層組合之金屬或錫膏。 十一、圖式： 28
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