TWI250586B - Thermal processing system with cross flow injection system with rotatable injectors - Google Patents

Abstract

An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes an injection system which provides for selectable injection of gases to the process chamber. The injection system comprises one or more elongated injection tubes having a plurality of injection ports or orifices distributed in the tubes for directing flow of reactant and other gases across the surface of each substrate. The elongated injection tubes are rotatable about an axis in 360 degrees.

Description

(1) 1250586 IX. Description of invention

The present application claims the benefit and priority of U.S. Patent Application Serial No. 60/5,056,053, filed on Sep. 25, 2003, the disclosure of which is hereby incorporated by reference. PCT Application No. PCT/US 0 3 /2 1 5 7 5, entitled "Heat Treatment System and Constructable Upright Chamber", which claims US 60/3 9 6, 5 3 6 and The priority of the provisional patent application No. 6/42, 5, 2, the disclosure of which is hereby incorporated by reference. FIELD OF THE INVENTION The present invention relates to systems and methods for heat treating articles such as substrates, particularly with respect to heat treating, annealing, or depositing multiple layers of material on a semiconductor wafer or substrate, or from a semiconductor wafer or substrate. A device or method for removing multiple layers of material. [Prior Art] In the process of forming a semiconductor substrate or wafer into an integrated circuit or a semiconductor device, a heat treatment device is usually used. The heat treatment of the semiconductor wafer includes, for example, heat treatment, annealing, infiltration or incorporation of dopant materials, deposition or growth of layers of material, etching or removal of material from the substrate. These procedures often require heating the wafer to a temperature as high as 丨3 〇〇〇c and a temperature as low as 30 °C during processing or processing, and often require delivery of more than one fluid (eg, process gas or Reagent) to the wafer. Moreover, despite the temperature variations of the process gas and the flow rate changes introduced into the process chamber, these programs typically also require 1250586 (2) to maintain the wafer at a uniform temperature throughout the process. A conventional heat treatment apparatus typically consists of a large volume processing chamber located within or surrounded by the furnace. The substrate to be heat treated is sealed in the processing chamber, and then the substrate is heated by a furnace to the temperature required to perform the treatment. For many procedures (eg, chemical vapor deposition; CVD), the sealed process chamber is first evacuated and, once the process chamber reaches the desired temperature, a reactive or process gas is introduced to form or deposit on the substrate. Reactant substance. Previous heat treatment devices, particularly vertical heat treatment devices, typically required heaters located above and below the processing zone where the wafer product was processed to protect adjacent sidewalls of the processing chamber. This configuration is not ideal because such a configuration requires a large chamber volume that must be pumped down, pumped with process gas or vapor, and re-inflated or rinsed, resulting in increased processing time. Moreover, such a structure occupies a large amount of space and power because it is difficult to view the wafer in the heater. Other problems with conventional heat treatment devices include: the temperature of the process chamber and the temperature of the wafer to be processed rise before processing, which takes a long time; and after processing, it takes a long time to lower the temperature. Furthermore, it is ensured that the processing chamber is steadily at the desired uniform temperature before it can begin processing, often requiring additional time. Although the actual time required to process the wafer may be less than half an hour, the time required for pre-treatment and post-treatment typically takes from 1 to 3 hours. Therefore, the time required to rapidly raise or lower the chamber temperature to a uniform temperature greatly limits the throughput of conventional heat treatment devices. Before the wafer is effectively heated or cooled, the conventional heat treatment device must be heated or cooled, so the basic reason for the relatively long rise or fall time is -6 - (3) 1250586 By the conventional treatment chamber and furnace The thermal quality. A common method of minimizing or offsetting the limitations of the throughput of conventional heat treatment devices has increased the number of wafers that can be processed in a single cycle or in a single run. Processing a large number of wafers at the same time can help maximize the efficient production of the device by reducing the average effective processing time per wafer. However, in the event of an error in the processing procedure, this approach also increases the risk. That is, a single failure is to scrap or lose a large number of crystals, such as if a device fails or fails to process during a single processing cycle. This requires special care in the case of larger wafer sizes and more complex integrated circuits, as a single wafer may cost between $1,000 and $10,000 depending on the processing stage. Another problem with this solution is that increasing the size of the process chamber to accommodate a larger number of wafers also increases the thermal mass effect of the process chamber, thereby reducing the rate at which the wafer is heated or cooled. Furthermore, processing a large processing chamber of a large set of wafers causes or causes problems with advanced exits, causing the wafers that are first loaded into the processing chamber to be eventually removed, causing the wafers to be exposed to high temperatures. Too long to reduce the uniformity of the entire set of wafers. Another problem with the above method is that the system or device used for many processing procedures before or after heat treatment does not have the ability to process a large number of wafers simultaneously. Therefore, 'processing a large group or a large number of wafers, although increasing the production capacity of the heat treatment device, it is difficult to improve the overall production capacity of the semiconductor manufacturing equipment, but may reduce the actual production capacity, because the wafer needs to be stacked before the heat treatment device, Or other systems and devices downstream of the heat treatment device can be stacked into a bottleneck. - 7- (4) 1250586 Another embodiment of the above conventional heat treatment apparatus is a rapid thermal processing system which has been developed for rapid thermal processing of wafers. Conventional rapid thermal processing systems, typically high intensity lamps, selectively heat a single wafer or a small number of wafers in a transparent (usually quartz) small processing chamber. Rapid heat treatment system Eliminates or minimizes the thermal mass effect of the process chamber. And because the lamps have a very low thermal mass, the wafer can be rapidly heated or cooled by quickly turning the lamp on or off. Unfortunately, conventional rapid thermal processing systems have serious drawbacks including the location of the lamp. Conventional techniques provide for the placement of lamps in zones or linings, each zone or lining being comprised of a plurality of lamps adjacent the side walls of the processing chamber. This configuration is problematic because it consumes a lot of space and power for efficiency and due to poor viewing factors. These problems are at the extra cost of the latest generation of semiconductor processing equipment. Another problem with conventional rapid thermal processing systems is the inability to achieve a uniform temperature distribution across multiple wafers or even a single wafer in a group. There are several reasons for the uniformity of the temperature distribution, including (I) the poor viewing factor of more than one wafer by more than one lamp, and the change in the output power of the (Π) lamp. Furthermore, the failure or change of a lamp can have an adverse effect on the temperature distribution of the entire wafer. For this reason, in most lamp-based systems, the wafer is rotated to ensure that temperature irregularities that may be caused by lamp changes during processing are not transferred to the wafer. However, the moving parts required to rotate the wafer, particularly the rotary feed into the heat treatment chamber, add to the cost and complexity of the system and reduce the overall system reliability. Winter 1250586 (5) Another annoying problem with rapid thermal processing systems is the need to maintain a uniform temperature distribution across the outer edge and center of the wafer. Most of the conventional rapid thermal processing systems do not have the proper equipment to handle this type of temperature non-uniformity problem. As a result, short-term temperature fluctuations occur on the entire surface of the wafer, causing the wafer to slide at high temperatures, and slippage is prevented unless a black body base having a larger wafer diameter is used. Conventional light-based rapid thermal processing systems have other disadvantages, such as the lack of a suitable device to provide uniform power distribution and temperature distribution over a short period of time. This short period of time, for example, when turning the light on or off, causes electrical noise unless phase angle control is used. Because each lamp has different performance due to its length of use, performance repeatability is often a drawback of lamp-based systems. Replacing the lamp requires increased cost and time consuming, especially when a lamp system has more than 180 lamps. Because the peak of the lamp consumes about 250 kilowatts of power, the power required is also expensive. Accordingly, there is a need for an apparatus or method that can rapidly and uniformly heat a set of substrates during a heat treatment process such that the entire surface of each of the set of substrates reaches a desired temperature. SUMMARY OF THE INVENTION The present invention provides solutions to these and other problems, and provides other advantages over the prior art. The present invention provides an apparatus and method for isothermally heating a workpiece, such as a semiconductor substrate or wafer, to perform, for example, annealing, infiltrating or doping a dopant 4' to deposit or grow layers of material, etching or moving from a wafer. In addition to materials. >9- (6) 1250586 A heat treatment apparatus for treating a substrate held on a carrier at a high temperature. The apparatus includes a processing chamber and a heating source. The processing chamber has a top wall 'side wall, and a bottom wall. The heat source has a plurality of heating elements that are adjacent to the top wall 'side wall' and the bottom wall of the processing chamber to provide an isothermal environment within the processing zone. The carrier is placed in the processing zone to heat treat the substrate. According to one aspect, the size of the processing chamber is selected to cover a volume that is not much larger than the volume required to accommodate the carrier, and the processing region extends generally through the processing chamber. Preferably, the volume of the selected dimensions of the processing chamber is no more than 125% larger than the volume required to accommodate the carrier. More specifically, the apparatus further includes a pumping system and a rinsing system that draws the processing chamber to a process pressure that is returned to the processing chamber after processing is complete. The size of the processing chamber is selected to provide a processing chamber that can quickly pump for reduced pressure and rapid retracement. According to another aspect of the invention, the bottom wall of the processing chamber includes a movable base having at least one heating element therein, and the movable base can be lowered or raised to enable the carrier having the wafer to be inserted into the processing chamber Or remove from the processing room. In one embodiment, the apparatus further includes a movable thermal shield that is insertable into the heating element within the base and the substrate held by the carrier. The thermal shield reflects thermal energy from the heating elements within the base back to the base to obscure the substrate on the carrier from the thermal energy from the heating elements within the base. In one version of this embodiment, the apparatus further includes a spacer that is movable into the upper position of the carrier to isolate the processing chamber when the base is in the lowered position. Where the apparatus includes a pump system to draw down the process chamber, the isolation plate seals the process chamber, thereby enabling the pump system to draw down the process chamber when the base is in the lowered position. -10- (7) 1250586 In yet another embodiment, the apparatus further includes a magnetic coupling reset system that is capable of resetting the carrier during heat treatment of the substrate. Preferably, the mechanical energy used to reset the carrier is magnetically coupled to the carrier through the base without the use of a movable coupling into the processing chamber without moving the heating elements within the base. More preferably, the magnetically coupled reset system is a magnetically coupled rotating system that rotates the carrier within the processing zone during heat treatment of the substrate. According to another aspect of the invention, the device further comprises an inner liner. The liner separates the carrier from the top and side walls of the processing chamber, and a dispersed or cross-flowing spray system directs fluid flow through the surface of each substrate held within the carrier. A cross-flow injection system generally includes a cross-flow ejector having a plurality of injection ports disposed relative to a substrate held within the carrier, and fluid is introduced into one side of the substrates via the ejection openings . The fluid flows through the surface of the substrate relative to the plurality of discharge ports disposed in the liner relative to the substrate held within the carrier. The fluid introduced by the cross-flow injection system may include a process gas or vapor, and an inert purge gas or vapor for scrubbing or returning to the process chamber, or an inert purge gas or vapor for cooling the substrate therein. In another aspect, the apparatus of the present invention includes an injection system that provides selective gas injection into the processing chamber. The spray system of the present invention typically includes more than one long spray tube having a plurality of spray ports or orifices disposed in the tube to direct reactants and other gases through the surface of each substrate. The long spray tube can be rotated by three hundred and sixty degrees with respect to one axis. In another embodiment, the apparatus of the present invention includes a processing chamber, a cross flow liner, and a cross flow injection system. The processing chamber provides a processing area for a plurality of substrates held in the carrier -11 - (8) 1250586; the cross-flow liner covers the carrier; the cross-flow ejection system is disposed on the carrier and the cross-flow lining Between, to direct more than one gas, flowing through the surface of each substrate. The cross-flow injection system includes a plurality of injection ports that are rotatable relative to an axis. [Embodiment] The present invention is directed to an apparatus or method for processing a relatively small number or mini group (batch) of workpieces. The workpiece, such as a semiconductor material or wafer, is held in a carrier such as a cassette or a boat, which reduces the time of the processing cycle and improves the uniformity of the process. As used herein, "mini-group" means a plurality of wafers built into a typical group system, but below a few hundred wafers, and preferably in the range of from 1 to about 53 semiconductor wafers. Among them, from 1 to 50 is the product wafer, and the rest is the non-product wafer used for monitoring purposes or as a baffle. The workpiece or wafer is heated to a desired temperature by heat treatment, which is typically in the range of from about 305 °C to about 130 °C. Thermal processing of the semiconductor wafer can include, for example, heat treating, annealing, infiltrating or doping the dopant material to deposit or grow a multilayer material (e.g., chemical vapor deposition or C V D ), etching or removing material from the wafer. A heat treatment apparatus of an embodiment will now be described with reference to FIG. For the sake of clarity, many details that are well known and familiar to those skilled in the art are omitted. This detail is in, for example, U.S. Patent U.  S.  4, 770, 5 90 are described in more detail, and the details are hereby incorporated by reference. -12- (9) 1250586 Real 06 Inside 12- ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ As shown, the heat treatment apparatus 100 typically includes a vessel 101 and a heat source or furnace 110. The container 101 is covered with a volume to form a processing chamber 1〇2, and the processing chamber is provided with a supporting seat 1 〇4 capable of accommodating a carrier or a boat, and the carrier 106 sets a group of wafers 1 〇8 is held in it. The heat source or furnace 110 has a plurality of heat source members 1 1 2 - 1 , 1 1 2 - 2, and 1 3 (hereinafter collectively referred to as dimension heating elements U2) for heat treatment by raising the temperature of the wafer to a temperature. The heat treatment apparatus 100 further includes more than one learned or electrical temperature sensing element, such as an impedance temperature device or thermocouple, monitoring the temperature within the thermal processing chamber 102, and/or controlling the heating element. The temperature sensing element shown in this embodiment is a profile thermocouple J 1 1 4 having a plurality of independent temperature sensing nodes or points (not shown) to sense the temperature of a plurality of locations within the chamber 10. The heat treatment chamber may also include more than one injector 1 16 (only one of which is shown) and more than one wash port or port 1 18 (only one of which is shown). The injector 1 16 directs fluid (body or vapor) into the processing chamber 1 〇 2 for processing and/or cooling the crystal 108; the rinsing port or port 118 directs the gas rinsing chamber and/or wafer 1 〇 8. The liner 120 increases the concentration of process gas or vapor in the vicinity of the wafer area or process area 1 28 wafer 108 and reduces the contamination of the wafer by deposit flaking forming the inner surface of the process chamber 102. The gas or vapor is discharged through a vent or tank of the lining 120. The container 10 is normally enclosed by a seal such as a 〇-ring 1 2 2 on a table or substrate 24 to form a process chamber 02, which completely covers the wafer 〇 8 between heat treatments. The treatment chamber 102 and the substrate -13 - 1250586 (10) of the substrate] 2 are selected to enable rapid evacuation of the process chamber into a vacuum, rapid heating, and rapid recovery. The dimensions of the container 101 and the substrate 1 24 are preferably designed such that the processing chamber 102 has a coated volume that is no larger than the size required to accommodate the carrier 106 in which the wafer 108 is held. . The size of the container 1 0 ] and the substrate 1 24 4 is preferably designed such that the size of the processing chamber 〇 2 is about the size required to accommodate the carrier 10 6 in which the wafer 1 〇 8 is held. 1 2 5 % to 1 50 0 %. The size of the container 1 0 1 and the substrate 1 2 4 is preferably designed such that the size of the processing chamber 1 〇 2 is not more than about 1 2 5 of the required size for accommodating the carrier 1 〇 6 and the wafer 10 8 . % to minimize the volume of the chamber, which helps reduce the time required to evacuate and return. The opening 1 16 of the injector 1 16 , the thermocouple 1 1 4, and the port 1 1 8 are closed using, for example, a 0-ring, a VCR®, or a CF® crucible. The gas or vapor released or introduced during the treatment passes through a foreline formed in the wall of the processing chamber 102 (not shown) or in the cavity 1 27 of the substrate 1 24 (shown in Figure 1). Or drain the outlet 1 2 6 and take it out. During the heat treatment, the process chamber 102 can be maintained at atmospheric pressure or pumped to a vacuum of as low as 5 mTorr (micron mercury) by a pump system. The pump system (not shown) includes more than one primary pump, blower, high vacuum pump, and primary valve, throttle, and pre-stage valve. In another embodiment shown in FIG. 2, the substrate 1 2 4 further includes a substantially annular flow path 1229, which is adapted to receive and support the injector 1 1 6 'the injector 1 1 6 includes a ring 1 3 1 and a plurality of upright spray tubes or nozzles A 6 A extending from the ring 13 1 . The size and shape of the nozzle 1 16 A can provide a flow pattern of upward flow, downward flow, or cross flow as described below. The position of the ring 1 3 ] and the nozzle n 6 a allows gas to be injected into the processing chamber 1 〇 2 between the boat] 06 and the container 0 1 . In addition, the nozzles 1 1 6 A are spaced apart from each other along the rings 1 3 1 -14 - (11) 1250586 to uniformly introduce process gases or vapors into the process chamber 102, and if desired, wash or return During this time, the nozzle 1 16 6 can be used to introduce the scrubbing gas into the processing chamber. The substrate 1 24 is designed to have a short cylindrical shape extending outwardly from the upper flange 13 3 , a side wall 1 3 5 , and an inwardly extending one bottom portion 1 3 7 . The upper flange 1 3 3 is adapted to receive and support the container 101 and includes a 0-ring 1 22 to seal the container to the upper flange. The bottom portion 1 3 7 is outside the ring 1 3 1 supporting the injector 1 16 , and is adapted to receive and support the inner liner 1 20 . Further, the substrate 1 24 shown in FIG. 2 is provided with various openings including back/塡The purge gas inlets 139, 143 provide a cooling port 145, 147 that circulates the cooling fluid within the substrate 124, and a pressure monitoring port 149 for monitoring the pressure in the process chamber. The process gas inlet 1 5 1 , 1 6 1 introduces gas from a supply source (not shown) to the injector 116. The return/washing gas inlets 139, 143 are provided on the side wall 135 of the substrate 1 2 4, and are mainly used to introduce the gas from the supply source of the purge gas into the port 1 18 . A mass flow controller (not shown) or any other suitable flow controller is provided on the line between the gas supply source and the openings 1 3 9 , 1 4 3 , 1 5 1 , 1 6 1 to control the flow of gas into the process The chamber 101 and the inner liner 120 may be subjected to thermal and mechanical stresses that are resistant to high temperatures and high vacuum operations, and are resistant to any metal, ceramic, crystal, or glass that is corroded by gases and vapors used during processing. Made of materials. The container 101 and the liner 120 are preferably made of opaque, translucent, or transparent quartz glass having a thickness sufficient to withstand mechanical stress and which prevents deposition of by-products produced by the process, thereby reducing potential contamination of the processing environment. In -15- (12) 1250586. The container 1 ο 1 and the inner liner 1 20 are preferably made of quartz which can reduce or eliminate heat transfer from the area where the wafer 1 处理 8 is processed or the processing area 1 2 8 . The entire batch of wafers 10 8 is introduced into the heat treatment apparatus by loading gates or loading ports (not shown), and then entering the processing chambers or openings in the processing chamber or substrate 124 capable of forming a gas tight seal. Inside the chamber 102. In the configuration shown in FIG. 1, the processing chamber 102 is an upright reaction furnace, and is raised during processing by the movable base 130, and the hatch is closed with a seal (eg, a Ο-ring) on the substrate 124; When the base 1 130 is lowered, an operator or an automated processing system (not shown) such as a boat handling unit can position the carrier or boat 106 on the support base 104 attached to the base. The heating element 1 1 2 comprises a top 1 3 4 (element 1 1 2 - 3 ), a side I 3 6 (element 1 1 2 - 2 ), and a bottom 1 3 8 (element Η 2) positioned at the processing chamber 1 0 2 - 1) Nearby components. The heating element 112 is preferably surrounded by the wafer to obtain good viewing factors and thereby provide an isothermal control volume or processing zone 128 within the processing chamber for processing the wafer 108 therein. The heating element approaching the bottom of the processing chamber 1〇2 138 can be disposed within the base 130. If desired, a heating element can be added to or on the substrate 1 24 to supplement the heat of the heating element 1 1 2 - 1. In the embodiment illustrated in Figure 1, the heating element 112-1 near the bottom of the processing chamber is preferably received within the movable base 130. The base 130 is made of a thermally insulating and electrically insulating material, or an insulating block 14 嵌入 in which the electrical resistance heating element 1 1 2 - 1 is embedded or attached. The base 130 further includes more than one feedback sensor or thermocouple 141 to control the heating element 丨2 _ ]. In the configuration shown, the thermocouple 14 1 is embedded in the center of -16- (13) 1250586 of the insulating block]40. The side heating elements 1 1 2 - 2 and the top heating elements 1 1 2 - 3 ' may be disposed in or on the insulating block 110 in the vicinity of the container 110. The side heating elements 1 1 2 - 2 and the top heating elements 1 1 2 - 3 are preferably housed in the insulating block Π 0. The heating elements 1 1 2 and the insulating blocks 1 1 0, 1 4 0 can be designed in any shape. Constructed and can be made in any manner and from any material. In order to obtain the desired processing temperature up to 1150 °C, the heating element 1 1 2 - 1 near the bottom 1 3 8 of the processing chamber 1 〇 2 preferably has a temperature of about 0.  The maximum power output from 1 kW to about 10 kW, and at least 1 15 (the maximum processing temperature of TC. More preferably, these bottom heating elements 1 1 2 - 1 have at least about 3.  Maximum power output of 8 kW, and maximum processing temperature of at least 95 °C. In an embodiment, the side heating elements 1 1 2 · 2 are functionally divided into a plurality of zones ' including a lower zone and an upper zone closest to the base 130, each zone being independent of the top heating element 1 1 2 - 3 In addition to the bottom heating elements 1 1 2 -1, the operation is performed at mutually different power levels and duty cycles. Heating element 1 1 2 is controlled by any suitable means, including control techniques using conventional techniques. Since the heating element and the insulating block are housed in the inverted quartz j: the inside of the insulating block 1 4 2, the contamination from the insulating block 1404 and the bottom heating element] 2 is not completely eliminated, and is much reduced. The 坩埚1 4 2 acts as a barrier between the heating element and the processing chamber 1 〇 2 .坩埚1 4 2 and load connection j; 阜, the boat handling unit environment is also sealed to further reduce or eliminate the pollution of the treatment environment. The interior of 坩埚1 42 is usually at standard atmospheric pressure, - 17- (14) 1250586. Therefore, the strength of the entire 坩埚1 42 should be sufficient to withstand the pressure difference between the treatment chamber 丨02 and the base 1 3 0 like 1 atmosphere. . When the wafer 1 〇 8 is loaded or unloaded, that is, when the pedestal is at a lower position (Fig. 3), the bottom heating element 1 1 2 - 1 is still energized to maintain a lower idle temperature than the desired temperature. For example, the processing temperature for the bottom heating element is 950 ° C, and the no-load temperature is 50 - 150. (: For some processing procedures, such as those with higher desired processing temperatures and/or higher desired heating rates), the no-load temperature can be set higher to lower the bottom heating element 1 1 2 The thermal cycling effect of -1, in order to extend the life of the component. 0 In order to further reduce the pretreatment time (that is, the time required to prepare the heat treatment device 1 for processing), during push or load (ie when lifting) The bottom heating element 1 1 2 - 1 can be heated to the desired processing temperature or lower temperature when carrying a boat 106 with the wafer 108 on the base 130. However, in order to make the wafer 1 0 8 and the heat treatment device 1 0 0 The thermal stress on the assembly is minimized, preferably with the bottom heating element 1 1 2- 1 and the heating element 112-3 located at the top 134 of the processing chamber 102 and the heating element 112-2 ' located at the side 136 simultaneously. Desirable processing temperature. Therefore, for some processing programs, such as those requiring higher processing temperatures, when the last wafer in a set of (batch) wafers is loaded, the base begins to lift. And before the base starts to lift The bottom heating element 11 2 - 1 begins to heat up. Similarly, it should be understood that after the treatment, and during the pull or unload cycle (ie, when the base is lowered) 28, the supply to the bottom can be reduced or completely removed - 18- (15) (15) 4 1250586 Heating element 1 1 2 1 power 'to start to reduce the base temperature to no-load temperature, ready to cool the wafer 1 〇 8 and unloaded by the boat processing unit. To help cool The base I 3 0 is lowered to the temperature of the drawing before the pulling or unloading cycle, and is provided with a line for supplying air or an inert scrubbing gas (for example, nitrogen) through the insulating block 104. The nitrogen is preferably passed through the insulating block. 1 40 The center channel 1 4 4 is ejected and can flow between and around the top of the insulating block 140 and the interior of the 坩埚1 4 2 . Then pass the high efficiency rate air filter (not shown) or the discharge device (not shown), the hot nitrogen is discharged to the external environment. The central injection structure design can cool the center of the wafer 108 more quickly, and is suitable for minimizing the center/edge temperature difference of the bottom wafer. This temperature difference will be damaged by the displacement of the lattice structure As described above, in order to increase or lengthen the life of the bottom heating element 1 1 2 - 1 , the no-load temperature can be set higher and closer to the desired processing temperature to reduce the thermal cycle effect. In addition, it is also desired to be enriched. In an oxygen environment, the heating element 11 2-1 is periodically baked to promote the formation of a protective oxide surface layer. For example, where the impedance heating element is formed of an aluminum-containing alloy (eg, Kantan®), The heating element 1 1 2 - 1 is baked in an oxygen-containing environment to promote the growth of the alumina surface. Therefore, the insulating block 4 〇 may further include an oxygen line (not shown) to bake the heating element 112-1 During the period 'promotes the formation of a protective oxide surface layer. In another embodiment, the oxygen for baking can be introduced through a three-way valve via a rinsing line for supplying nitrogen during the processing. 3 is a partial cross-sectional view of the heat treatment apparatus 10. Figure 3 shows the heat treatment device 0 0 when loading or unloading the wafer 1 0 8 , that is, when the base 1 3 0 -19- (16) 1250586 step 46 reversed the holding factor % ώ: under the cover The seat is covered by \ j \ \\ plus seat is in the lower position. In this mode of operation, the heat treatment apparatus 1 includes a heat shield 146, which can be rotated or slid between the base wafer 130 and the wafer 1 〇8 in the wafer boat 106. Positioning. In order to improve the performance of the thermal mask, the thermal mask is generally permeable on the side facing the heat treatment element 11 2 -1 and absorptive on the side facing the wafer. The purpose of the thermal mask 146 includes increasing the cooling rate of the wafer 1 in the wafer 1 〇6, and helping to reduce the no-load temperature of the pedestal 1130 and the bottom heating element 1 1 2 -1 to reduce The temperature at which the chamber is warmed up to the desired temperature. An embodiment of a heat treatment package having a heat shield will be described in more detail with reference to Figs. 3 to 6. Figure 3 also shows a heat treatment device 1 having a base heating element 112-1 and a heat shield 146. In the illustrated embodiment, the heat shield 146 is attached to the rotating shaft 150 by means of an arm 148. Rotating the rotating shaft 150 by electric, air pressure, or hydraulic actuator to rotate the thermal cover 1 4 6 into the heated base 1 3 0 and the boat 1 〇 6 during the pulling or unloading cycle a first position between the wafer I 〇 8 in the middle; and during the last or final phase of the push or load cycle (just before the bottom of the boat 106 enters the chamber 102), The thermal mask 146 is removed or rotated to a second position that is not between the bottom and the wafer. Preferably, the rotating shaft 150 is assembled or attached to a mechanism for lifting or lowering the base 130 (not shown), thereby enabling the processing chamber I 〇 2 to be processed as soon as possible at the top of the base. Position the thermal cover 1 4 6 rotation. Maintaining the thermal mask 148 positioning during loading allows the heating element 1 2-1 to heat up to the desired temperature more quickly than if the thermal mask 148 were positioned. Similarly, during the unloading, by reflecting the radiation from the bottom heating element Π 2 - 1, the mask 146 helps to cool the wafer, -20-(17) !25〇586 not cooling those closer The wafer of the base. In another embodiment, the rotating shaft 150 can be mounted or attached to another portion of the heat treatment device 100, and is adapted to move axially with the base 130, or only when the base is completely lowered. Thermal mask 丨 4 6 rotational positioning. Figure 4 illustrates the base heating element of Figure 3; Π2-1 and thermal shield 146' which show thermal or thermal radiation from the bottom heating element, reflected back to the base 1 3 0 ' and absorbed from the batch or stack Thermal energy or thermal radiation from a lower wafer in the wafer. The desired characteristics, high reflectance, and high absorbance can be obtained using a variety of different materials (e.g., metal, ceramic, glass, or polymer coatings; individual or combinations thereof). The table below lists, by way of example, various suitable materials and corresponding parameters. Table 1 Material Absorption rate - ^ inch rate Not steel, ---- 0. 2 opaque quartz ----- 0. 5 ——__〇. 8 polished Ming 0. 03 —-__〇. 5 ——7 Carbide 矽 0. 9 -----1 —--- According to an embodiment, the thermal mask may be made of a single material such as tantalum carbide, opaque quartz, or part 2 material lining, phantom stainless steel, cargo light, another The side is painted, scratched, or roughened. Bu-, ~ side throw surface rough, can greatly change its heat transfer _ 彳 ° • heat mask one. Specially wrapped in reflectance - 21 ^ 1250586 (18) In another embodiment, the thermal mask M6 can be made of two different layers of material. Figure 5 is a schematic illustration of a thermal mask 64 having an upper layer of high absorbency material such as tantalum carbide or opaque quartz, and a lower layer of high reflectivity material or metal such as polished stainless steel or polished 纟g 5 4. Although shown to have nearly equal thickness, it should be understood that any of the upper layer 152 or the lower layer 154 may have a greater thickness, depending on the particular needs of the thermal mask, for example, in order to have a coefficient of thermal expansion between the two layers. The thermal stress caused by the difference is minimized. For example, in some embodiments, the lower layer i 5 4 can be a very thin, polished metal layer or film deposited, formed, or plated onto a quartz plate that forms the upper layer 152. The materials may be formed, interlocked, or joined together by conventional means such as joining or securing. In yet another embodiment, the thermal mask 146 further includes an internal cooling runner 156 to further isolate the wafer 1 〇 8 from the bottom heating element 1 1 2 -1. In a version of this embodiment, as shown in Figure 6, a cooling runner 156 is formed between two different material layers 15 2 and 145. For example, a cooling flow path 156 can be formed in a high absorptivity opaque quartz layer 15 2 by a process or any other suitable technique and a metal layer 丨 5 4 or a coating layer coated with, for example, titanium or aluminum. cover. The cooling runners 156 may also be formed in the metal layer 154 or both in the metal layer and the quartz layer 152. Figure 7 is a perspective view of one embodiment of a thermal mask assembly 153 comprising a thermal mask 146, an arm 148, a rotating shaft 150, and an actuator 155. As shown in FIG. 8, the heat treatment device 100 further includes a spacer plate 158, which can be rotated, slid, or otherwise moved over the boat 1 〇6 to be positioned to be sufficiently lowered at the base. In the case of the location, the heat treatment chamber 102 - 22 - 1250586 (19) is isolated from the outside or the loading environment. For example, when the base 130 is in the lower position, the spacer plate 158 slides into position above the carrier 1 〇 6 and rises to isolate the process chamber 102. In another embodiment, the spacers 158 can also be rotated or oscillated into a position above the carrier 106 when the base 13 〇 is in a lower position and then raised to isolate the processing chamber 102. The spacers 158 can be selectively rotated about the threads or relative to the posts to simultaneously lift the spacers, while isolating the process chamber 102 as it swings into position over the carrier 106. For a processing chamber 102 (e.g., a CVD system) that operates normally under vacuum, the spacers 158 can form a vacuum seal to the substrate 142 to allow the processing chamber 102 to be depressurized by suction to Handle pressure or vacuum. For example, it may be desirable to draw a 10 2 step down of the process chamber between batches of wafers to reduce or eliminate potential for contaminated processing environments. Preferably, the vacuum seal is formed by a large diameter seal (e.g., a 0-ring), so the separator plate 158 may include a plurality of water passages 160 to cool the seal. In the embodiment shown in Figure 8, the same rim-shaped ring 132 as the sealing jaw 142 is used to seal the spacer 1 58 when the base 130 is in the raised position. For a heat treatment device 130 in which there is a processing chamber 102 operating normally under atmospheric pressure, the separator 1 58 is merely an insulating plug designed to reduce heat loss at the bottom of the chamber. In order to achieve an embodiment of this object, an opaque quartz plate is used which may further (and may not include) a plurality of cooling channels below or inside thereof. When the base 130 is in the fully lowered position, the spacer 158 is moved into position below the processing chamber 102 and then the chamber is isolated by more than one electrical, hydraulic, air brake (not shown), lifted. Preferably, the actuator -23 - (20) 1250586 is an air that is used at about 15 to 60 pounds per square foot (p S I G ) and is often available on a heat treatment unit to operate the air pressure valve. In one version of the example, the spacer panel 158 can include a panel and the arm attaches a plurality of wheels to both sides of the panel. On the working partition plate 158, roll from the two parallel rails into the processing chamber 1 〇 2 below the rail, then pivot the arm and move the spacer 1 5 8 direction to seal the processing chamber 1 0 2 . As shown in Fig. 9, the heat treatment apparatus 1 further includes a magnetic rotation system 1 62 that rotates the support 1 〇 6 together with the wafer 1 〇 8 supported on the wafer 1 〇 6 during the processing. Rotating the wafers 108 between them improves the uniformity within the wafer by averaging the non-uniformity of the heating elements 1 1 2 to create an upper temperature and object response profile. Wafer rotation system 1 6 2 pass 〇.  Rotate wafer 1 0 8 at a rate of 1 to about 1 rpm. The wafer rotation system 1 62 includes a drive assembly or a rotating mechanism having a rotary motor 1 motor or a pneumatic motor) over a chemically resistant container (eg, annealed Teflon or magnet 186. Just at the base) 1 3 0 insulation block 1 4 0 1 7 0, and the drive shaft 1 7 2 connecting the insulation block, transmitting another magnet 1 7 4 above the insulation block in the top of the rotary base. Steel shaft 1 7 2, and The two magnets 174 are also coated in the chemical intrusion. The magnets 174 located on the side of the base 130 are passed through the 坩: steel ring or the support seat 104 embedded/attached to the processing chamber 102] via the base] 30 and magnetically coupled to the rotating mechanism] 64, the air is as in the present embodiment by the short arm or in the middle, the position of the plate or the stop-and-hold pull-up wafer 104 and the boat handling procedure The wafer with uniform gas flow can often be used in the inner and outer steel ring energy of about 66 (m tin m 146, and stainless steel) in the ring 170, the vessel vortex 142 of the erosion I. Can eliminate the need to set the -24- (21) 1250586 rotating mechanism in the processing environment or set the mechanical coupling In order to eliminate the potential source of leakage or contamination. Further, the rotating mechanism is disposed outside and away from the processing environment, and the temperature exposed by the rotating mechanism 1 64 can be minimized, thereby increasing the wafer. Reliability and Operating Life of Rotating System 1 62 In addition to the above, wafer rotating system 162 may further include more than one sensor (not shown) to ensure proper wafer boat position, and processing chamber A suitable magnetic coupling of the steel ring or magnet 176 in the 102 and the magnet 174 in the base 130. A sensor that determines the relative position of the boat 106 or a sensor that confirms the position of the boat is particularly useful. In an embodiment a sensor for confirming the position of the boat, including a sensor protrusion (not shown) on the boat 107, and an optical or laser sensor located below the substrate 14. In operation, Yu Jing When the circle 1 〇 8 has been processed and the base 130 drops to about 3 下方 below the substrate 1 2 4, the wafer rotation system 1 62 begins to rotate until the wafer sensor protrusion is visible. Then, the wafer is manipulated. The rotating system 1 62 aligns the boat to unload the wafer 108. At this point, the boat will drop to the loading/unloading height. After the initial inspection, the position of the boat can only be confirmed from the marking sensor. As shown in Fig. 10, the heat treatment device 100 preferably uses a modified sprayer 2 16. The ejector 2 16 is a distributed or crossed (X) flow ejector 216-1. The process will be processed via an opening or hole of the ejector located on the wafer 108 and the boat 106 side. The gas or vapor is introduced and flows through the surface of the wafer in a laminar flow and then discharged from the discharge port or tank 182 of the process chamber line 1 250 on the opposite side. The cross-flow ejector Π 6-] improves the batch of wafers by providing a 25- to 1250586 (22) cloth with improved process gas or vapor, relative to the earlier upward or downward flow design. Uniformity of each wafer within 8. In addition, the parent fork iiL·Jing Yi 2 16 - 1 may have other purposes, including spraying a cooling gas (e.g., helium, nitrogen, hydrogen) to force convection cooling between the wafers 8 . The use of a cross-flow ejector 2 1 6 - 1 results in a more uniform 1 〇 8 between the wafers, either at the bottom or top of the stack or the batch, compared to an earlier upward or downward flow design. Or the middle of the wafer. The aperture 180 of the ejector 2 16 is preferably designed such that its size, shape, and position provide a spray pattern to provide forced convection cooling of each of the wafers of 108, so that no Large temperature gradient. Figure 1 is a partial cross-sectional side view of the heat treatment apparatus 1 of Figure 1, showing the relationship between a portion of the injector orifice 180 and the treatment chamber liner 120, and the discharge tank 18 2 and the wafer 10 8 relationship. Figure 12 is a partial plan view, taken along line A - A of the heat treatment device 1 〇 0 of Figure 10, showing the gas laminar flow of an embodiment, from the first ejector 1 8 4 hole 1 8 0 - 1 and The hole 1 8 0 - 2 of the second ejector 1 8 6 passes through one of the illustrated wafers 1 〇 8 to the discharge slots 1 8 2 - 1 and 1 8 2 - 1. It should be noted that the position of the discharge groove 182 shown in Fig. 1 has been moved from the positions of the discharge grooves 1 8 2 - 1 and 1 8 2 - 1 shown in Fig. 12, so that the discharge groove and the ejector 1 1 have been made. 6 -1 can be displayed in a single section view of the heat treatment unit. It should also be noted that the dimensions of the injectors 1 8 4, 1 8 6 and the discharge slots 1 8 2 - 1 , 1 8 2 - 1 relative to the wafer 108 and the process chamber liner 120 have been exaggerated to A more ambiguous example is the flow of gas from the ejector to the discharge chute. Figure 12 also shows that the process gas or vapor is initially directed away from the wafer 1 〇 S and toward the lining] 20 to facilitate mixing of the process gas or vapor before reaching the crystal -26-1250586 (23) circle. The construction of the apertures 180-1, 180-2 is particularly useful when the first and second injectors 184, 186 are introduced with different reactants to, for example, form a plurality of component films or layers. Figure 13 is another partial plan view along line aa of the heat treatment apparatus 100 of Figure 1, showing the holes 1 800 from the first and second injectors 1 8 4, 1 8 6 through the instantiated wafer 1 〇 8 In one embodiment, another embodiment of the gas flow path to the drain tank 128. Figure 14 is another partial plan view of the heat treatment device 1A along the line aa of Figure 10, showing the holes 1 0 0 from the first and second injectors 1 8 4, 1 8 6 through the instantiated wafer 1 〇 8 One of them, another embodiment of the gas flow path to the discharge tank 128. Figure 15 is another partial plan view of the heat treatment apparatus 100 of Figure 10 taken along line AA of the first and second injectors 1 8 4, 1 8 6 through the illustrated wafer 1 〇 8 First, another embodiment of the gas flow path to the discharge tank 182. Figure 16 is a cross-sectional view of a heat treatment apparatus 100 having two or more upwardly flowing injectors 1 1 6 - 1 and 1 16 6 - 2 in another embodiment. In this embodiment, the process injectors 1 16-1, 1 16-2 having individual outlet ports located below the process chamber 102, with the process gas and vapor flowing upwardly, passing through the wafer 1 〇 8 and then used The exhaust gas is discharged from the discharge tank 182 at the top of the lining. The upwardly flowing injector system is also shown in Figure 1. Figure 17 is a cross-sectional view of another embodiment of a heat treatment apparatus 100 having a downward flow ejector system. In this embodiment, the process injectors 1 1 6 - 1 , Η 6 - 2 having individual holes located in the process chamber 102 have their process gas -27-1250586 (24) body and vapor flowing downwardly, and After passing through the wafer 108, the used exhaust gas body 'is discharged from the drain groove ι82 at the lower end of the liner 120. The injectors 116, 216, and/or the liner 2, can be quickly and easily replaced or replaced with different injectors and liners that have different injection points and points that process the process gas from the treatment zone. Those skilled in the art will be able to understand the embodiment of the cross-flow injector 2丨6 shown in Fig. 10, because the flow pattern in the processing chamber 1 〇2 can be quickly obtained from the cross-flow model shown in Fig. 1 And it is easily changed to the upward flow model as shown in Fig. 1 or i6, or to the downward flow model as shown in Fig. 17, so that the degree of freedom of processing elasticity is increased. This can be accomplished by using an easily assembled injector assembly 2 16 and liner 1 2 0 to convert the flow geometry from a cross flow to an upward flow or a downward flow. The ejector 1 16 6 , 2 16 , and the liner 1 2 〇 can be separate components, or the ejector can be integrally formed with the liner as a single component. The latter embodiment is particularly useful where it is desired to frequently change the process chamber 1 流动 2 flow model. An exemplary method or process for operating the heat treatment apparatus 1 〇 做 will be described with reference to FIG. Figure 18 is a flow diagram of various steps in a method of heat treating a batch of wafers 108, wherein each wafer of the batch of wafers is rapidly and uniformly heated to a desired temperature. In this method, the base 1 3 〇 is lowered, and when the base 390 is lowered, the 'heat hood 1 42 is moved into position' to reflect the heat from the bottom heating element 1 I 2 - 1 back to the base to maintain the temperature of the base. And isolate the processed wafer 1 〇 8 (step 1 90). Optionally, the spacers 1 58 are moved to position ' to seal or isolate the process chamber 1 (step) 92). Power is applied to the heating element n 2_2, 1 ] 2_3 to preheat the process chamber 02 -28 - l25 〇 586 (25) $ to or from the intermediate temperature or no-load temperature (step 194). The carrier or boat 1 〇 6 carrying the new crystal _ 1 〇 8 is positioned on the base 130 (step 196). While the spacer 158, the thermal shield 142, and the bottom heating element n 2 _ 1 are warmed to preheat the wafer to an intermediate temperature, the base 1 3 举 is lifted to position the boat in the processing zone. Within 8 8 (step 1 97) ° preferably, just before the wafer boat 6 is positioned within the processing zone 28, the thermal mask 1 4 2 is removed; for example, a fluid for processing a gas or vapor is passed through The ejection port 180 is introduced into one side of the wafer cassette 8 (step 9 8). The fluid flows from the ejection opening 180 through the surface of the wafer 1 〇 8 to the other side of the wafer with respect to the ejection opening and is disposed in the vent 1 8 2 in the lining i 2 0 (step 199). Selectively, during the heat treatment of the entire batch of wafers 108, the boat! 〇6 can be rotated in the processing zone 128 to further improve the uniformity of the heat treatment; during the heat treatment of the wafer, the mechanical energy of the magnetic coupling is transmitted to the carrier or the boat through the base 丨3. The wafer boat is reset (step 200). A method or process of the heat treatment apparatus 1 of another embodiment will be described with reference to Fig. 19. Figure 9 is a flow chart showing the steps of a method for heat-treating one of the batches of wafers in a carrier. In this method, the apparatus 1 is provided with a processing chamber 102, and the size and volume of the processing chamber are not required to accommodate the carrier 1 〇6 having the wafer 1 〇8 therein (no protective heater) The size of the ) is much larger. The base 130' is lowered and the wafer boat μ holding the wafer 1〇8 therein is positioned on the base (step 2 0 2 ). While the wafer 1 〇 8 is preheated to the intermediate temperature, the pedestal 130 is lifted to insert the wafer boat into the processing chamber 1 〇 2 (step 205). Apply electric power to the heating element] 丨2 - ], 1 1 2 - 2,] 1 2 - 3, each heating element is placed on the top wall of the processing chamber 1 0 2] 3 4, side wall 〖3 6, -29 - (26) 1250586 and at least one of the bottom wall 1 3 8 to start heating the processing chamber (step 206). Optionally, the power applied to at least one of the heating elements is independently adjusted to provide a processing environment 1 in the processing chamber 102 at a desired isothermal environment (step 208). When the wafer has been heat treated, and when the processing region 128 maintains the desired temperature, the substrate 130 is lowered, and the thermal mask 1 42 is moved into position to isolate the processed wafer 1 〇 8 , and The heat from the bottom heating element 1 1 2 - 1 is reflected back to the base 130 to maintain the temperature of the base (step 2 1 0 ). Optionally, the spacer is moved into position to seal or isolate the process chamber 102 and apply power to the heating elements 1 1 2 - 2, 1 1 2 - 3 to maintain the temperature of the process chamber (step 2 1 2 ). Then, the boat 1 〇 6 is removed from the base 130 (step 2 1 4). Position another boat loaded with a new batch of wafers to be processed on the base (step 2 16). Reset or remove the spacer 1 5 8 (step 2 1 8). Retreating or resetting the thermal mask to preheat the wafer 1 0 8 in the wafer boat to the intermediate temperature while the lift base 130 is being inserted into the processing chamber 102 for heat treatment of the new batch of wafers. (Step 2 2 0 ). The heat treatment apparatus 1 provided and operated as described above reduces the treatment or cycle time by about 75 % compared to conventional systems. For example, a large batch of heat treatment devices is known to process 100 wafer finished products in approximately 23 minutes (including pre- and post-processing times). The heat treatment apparatus 100 of the present invention performs the same treatment on a small batch of 25 finished wafers in about 58 minutes. Referring to Figures 20-3, an injection system of one embodiment of the present invention will be described with an injection port or orifice distributed in a long tube injector that has been used in horizontal • 30-1250586 (27) and upright furnaces to control The gas concentration of the entire surface of the substrate. Typically, depending on the particular application, more than two injectors are used to distribute similar or different gases, for example, to deposit P-doped polysilicon, an injector with a dispersed injection port has been used to introduce the p Η 3 gas The crystal is loaded across the entire wafer in the furnace' to provide a uniform gas concentration. An ejector with a dispersed jet is used to ensure the same properties of the deposited film for the entire wafer loading. Conventionally, the injector is fixed, i.e., the direction of the injection port or orifice of the injector is fixed, and the direction is typically toward the center of the wafer. Even so, the film deposited on the wafer still exhibits undesirable intra-wafer uniformity. The uniformity, quality, and repeatability of the deposited film depend not only on gas flow rate, concentration, pressure, and temperature, but also on gas flow models and gas distribution. The spray system provided by the present invention can adjust the angle to enhance the impact mixed momentum transmission of different gases, thereby improving flow uniformity and quality and uniformity of the deposited film. The injection system of the present invention typically includes more than one long spray tube having a plurality of spray ports or orifices distributed in the tube to direct reactants and other gases through the surface of each substrate. The long spray tube can be rotated by three hundred and sixty degrees with respect to one axis.

Figure 20 shows a thermal processing apparatus 230 of one embodiment of the present invention including an injection system 250. In order to simplify the description of the present invention, elements that are not closely related to the present invention are not shown in the drawings and the description. Apparatus 203 typically includes a container 234 that houses a processing chamber 236 having a support base 328 adapted to receive a carrier 240 having a plurality of wafers 242 therein. Apparatus 203 includes a heat source or furnace 2414 to raise wafer 24 to a desired heat treatment temperature. The cross-flow liner 23 2 is used to increase the concentration of the processing gas or vapor near the wafer 2G - 31 - 1250586 (28) and to reduce the deposition or peeling of the wafer formed on the inner surface of the processing chamber 263. Pollution. The shape of the liner 23 2 is designed to fit the contour of the wafer carrier 240 and is sized to reduce the gap between the wafer carrier 240 and the liner wall. The inner liner 232 is mounted on the substrate 246 and sealed, and the cross-flow injection system 250 is disposed between the inner liner 2 3 2 and the wafer carrier 240. The gas is introduced through a plurality of ejection openings or holes 2 5 2 located on the wafer 24 2 and the carrier 240 side, and flows through the surface of the wafer in the following laminar flow. The inner liner 2 3 2 on the opposite side forms a plurality of grooves 2 5 4 to discharge the gas or the by-product after the reaction. The cross-flow injection system 250 includes more than one long injection tube, and Figure 21 shows a long injection tube 256 in accordance with one embodiment of the present invention. As shown, the long spray tube 256 is provided with a plurality of injection ports or holes 25 2 . In one embodiment, the distance between each of the injection ports 252 is such that after assembly of the injection tube, the height of each injection port 252 is between two adjacent wafers supported by the wafer carrier 240. Between 2, the gas ejected from the ejection port 252 flows through the path formed by the adjacent two wafers. In another embodiment, the spacing and number of the respective injection ports or holes 25 of the injection pipe 256 are matched with the interval and number of the grooves 254 of the lining, so excessive gas and reaction by-products are Correspondence of lining;); Cao discharge. The injection system 250 of the present invention may comprise more than one long injection tube 256 as shown in Figure 21. The long spray tube 2 5 6 can be made of any metal, ceramic, crystal, or glass material that can withstand the thermal and mechanical stresses of high temperature, high vacuum operations and is resistant to corrosion by gases and vapors used or released during processing. The spray tube is preferably made of opaque, translucent, or transparent quartz glass. In an embodiment, the spray tube is made of quartz. - 32 - 1250586 (29) Figure 22 is a partial cross-sectional view of the heat treatment apparatus 230, showing the connection of the injection system 250 and the substrate 2 4 6 having the liner 2 3 2 . The long jet tube 256 is coupled to the jet inlet 262 in the substrate 246 and is sealed to the substrate by a serpentine ring 246. As shown in Fig. 23, the 'long shot tube 2 5 6 engages the inner liner 2 3 2 by the holding block 2 6 6 . The small 2 6 8 locks the clamping block 266 to the substrate 246. The reactant or other gas is introduced into the injection tube 256 via the inlet 262. Figure 24 is a partial plan view of the top plate 270 of the liner 232. The top plate 270 has a plurality of openings 272 for receiving more than one spray tube 256. As shown, the opening 2 7 2 of the top plate 270 is provided with a plurality of recesses 2 7 4 to stabilize the long spray tube 2 5 6 and to make the ejection opening 2 5 2 of the gantry 2 5 6 face in a specific direction. The three recesses 274 AC illustrated in each opening 272 are merely illustrative, it being understood that any number of recesses can be provided so that the long jet tube can be rotated and adjusted by three hundred and sixty degrees with respect to one axis, and the jet port 2 58 can be Orient in any direction you want. In one embodiment, the long tube 256 includes a scale pin (not shown) for locking the long tube 256 to the plurality of recesses 2 74 of the opening 272. In another embodiment, the injection port or bore 2 5 2 of the tube 256 is aligned with the scale pin. Therefore, when the long tube 256 is assembled, the scale pin is locked in one of the recesses 247, and the venting opening 252 in the tube 256 is oriented in the direction indicated by the scale pin locked in the recess. For example, when the scale pin in the long tube 256 is locked in the recess 2 7 4 A, the ejection opening 252 faces the inner surface facing the inner liner 232. The gas ejected from the ejection port 252 strikes the inner liner wall and is mixed before flowing through the surface of each of the substrates 242. In another embodiment, when the scale pins in the long tubes 2 6 6 are locked in the recesses 2 7 4 B, the jet ports 2 5 2 of each of the spray tubes 2 5 6 face each other. Spray -33· (30) 1250586 The gas ejected by p 2 5 2 collides with each other and is mixed before flowing through the surface of each substrate. In yet another embodiment, the scale pin in the long tube 256 is locked within the recess 2 7 4 C, so the jet port 252 is directed toward the center of the substrate 2 4 2 . The number of depressions formed in the opening can be as much as the desired number, so that the long tube 2 5 6 can be rotated by three hundred and sixty degrees and stabilized at the desired position, so that the injection port 2 5 2 can be oriented toward the The direction of desire. The injection system of the present invention provides sufficient rotational freedom for the injection port to enhance the momentum transfer of the impact mixing of the gas, which may vary in different methods. The orientation of the jet or hole that affects the mixing and flow direction of the gas can be adjusted in a run-to-run manner without modifying the chamber. In one embodiment, the invention is used in conjunction with a cross-flow liner having a protruding section. The U.S. Patent Application Serial No. (Attorney Serial No. 33586/US/1), which is incorporated herein by reference, is hereby incorporated by reference. Figures 25-26 show a crossflow liner 276 that can be used with the spray system 250 of the present invention. As shown, the cross-flow liner 276 includes a cylinder 2 7 8 having a closed end 28 0 0 and an open end 2 8 2 . The cylinder 278 is provided with a longitudinally projecting section 2 84 for receiving the cross-flow injection system 250. On the opposite side of the projecting section 284, the cylinder 278 is provided with a plurality of transverse grooves 286 arranged longitudinally to vent gases and reaction by-products. The cross-flow liner 276 is sized and shaped to fit the profile of the wafer carrier 240 and the carrier support 238. In one embodiment, the liner 276 includes a first section 28 8 that is sized to fit the wafer carrier 240 and a second section 2 9 尺寸 that is sized to support the carrier support 2 3 8 . The diameters of the first paragraph 2 8 8 and the -34 - 1250586 (31) two sections 290 may be different, that is, the inner lining 276 may be stepped to fit the wafer carrier 240 and the vehicle support respectively. Block 2 3 8. In one embodiment, the first section 286 of the liner 276 has an inner diameter of from about 1% to about 1% of the outer diameter of the carrier. In another embodiment, the second section 690 of the inner liner 276 has an inner diameter of from about 1 1 5 % to about 1 2 0 % of the outer diameter of the carrier support 2 3 8 . The second section 290 may be provided with more than one thermal shield 246 to protect the seal of the Ο-type ring from overheating by the heating element. A cross-flow liner 274 having a longitudinally projecting section 284 can be fabricated in accordance with the profile of the wafer carrier 240 to reduce the gap between the liner 276 and the wafer carrier 24. This helps to reduce eddies and stagnation in the area of the gap between the inner wall of the liner and the wafer carrier, and thus improves flow uniformity, which can improve the quality, uniformity and repeatability of the deposited film. In an embodiment shown in Fig. 27, two long spray tubes 256 are assembled within the projecting section 284 of the crossflow liner 276. The long tube 256' is rotated and adjusted so that the ejection opening 252 faces the inner surface of the inner liner 276. As shown in Fig. 27, the gas ejected from the ejection port 252 hits the inner liner wall and is mixed before the projection 284 before flowing through the surface of each of the substrates 242. In another embodiment shown in Fig. 28, the two long tubes 256 are rotated and adjusted so that the ejection openings 252 face each other. As shown in Fig. 28, the gases ejected from the ejection openings 252 collide with each other and are merged prior to the projections 284 before flowing through the surface of each of the substrates 242. In still another embodiment shown in Fig. 29, the two long tubes 256 are rotated and adjusted so that the ejection openings 255 are directed toward the center of the substrate 242. The following examples are intended to further illustrate the invention and are not intended to limit the scope of the invention in any form. -35 > 1250586 (32) Example 1 This example illustrates the deposition of tantalum nitride using monochloromethane (D C S ) and ammonia gas, which is performed in a heat treatment apparatus including an injection system of the present invention. The injection system includes a first injection tube for introducing methane gas and a second injection tube for introducing ammonia gas. Each of the first and second spray tubes is provided with a plurality of ports or holes' to direct gas flow through the surface of each substrate. In one variation, the long tubes are rotated and adjusted such that the spray ports face the inner surface of the liner. The methylene chloride and ammonia gas ejected from the ejection openings are then moved away from the wafer and hit the inner surface of the inner liner. In another variation, the long tube is rotated and adjusted so that the ejection opening faces the center of the substrate. The methylene chloride and ammonia gas ejected from the ejection openings flow through the surface of each of the substrates. Figure 30 is an illustration of computational fluid dynamics showing a uniform flow of methylene chloride and ammonia in the ejector configuration through the surface of the substrate. The jetting orifice of the injector faces the center of the substrate creating a radially inward flow of gas. In this case, the difference in mass between methylene chloride and ammonia is small (D C S II 1 01, NH3 = 17), so the gas velocity is similar. EXAMPLE 2 This example illustrates the deposition of tantalum nitride using di-tert-butylaminodecane (BTBAS; bis t e r t b u t y) a m i η s s i 1 a n e ) and ammonia, which is performed in a heat treatment apparatus including an injection system of the present invention. The injection system -36-1250586 (33) includes a first injection pipe for introducing dit-butylaminodecane gas, and a second injection pipe for introducing ammonia gas. Each of the first and second injection tubes is provided with a plurality of ports or holes to direct the flow of gas through the surface of each substrate. In a variant, the long tube is rotated and adjusted so that the injection opening faces the inner surface of the liner. The di-tert-butylaminodecane and ammonia gas ejected from the ejection openings are moved away from the wafer and hit the inner surface of the liner before flowing through the surface of each substrate. In another variation, the long tube is rotated and adjusted so that the ejection opening faces the center of the substrate. The di-tert-butylaminodecane and ammonia gas ejected from the ejection openings are struck and mixed before flowing through the surface of each substrate. Figure 31 is an illustration of computational fluid dynamics showing a uniform flow of di-tert-butylaminodecane and ammonia in the ejector configuration through the surface of the substrate. The jets of the injector face each other, creating a converging gas flow. In this case, di-tert-butylaminodecane has a molecular weight of 1 74 and ammonia has a molecular weight of 17 . Rewinding and mixing of di-tert-butylaminodecane and ammonia to ensure a uniform gas velocity as the gas flows through the wafer and results in an additional wafer of less than 1.5% (1 sigma) on a 300 mm wafer Internal uniformity. Example 3 This example does not use dimethyl ester (TMA; 11. i in ethy I a 1 uminum ) and ozone (〇 3 ) alumina (A] 2 〇 3 ) deposition, which is included in the invention. Execution within the heat treatment unit of the injection system. The injection system includes a first injection pipe for introducing trimethylaluminum gas, and a second injection pipe for introducing ozone gas. Each of the first and second injection tubes is provided with a plurality of ports or -37-(34) 1250586 holes' to direct gas flow through the surface of each substrate. In a variant, the long tube is rotated and adjusted so that the injection opening faces the inner surface of the liner. The trimethylaluminum and ozone gases ejected from the ejection openings are far from the wafer and strike the inner liner wall before flowing through the surface of each substrate. In another variation, the long tubes are rotated and adjusted so that the ejection openings face each other. The trimethylaluminum and ozone gas ejected from the ejection openings are struck and mixed before flowing through the surface of each substrate. Figure 3 2 is an illustration of computational fluid dynamics showing a uniform flow of trimethylaluminum and ozone gas within the ejector configuration through the surface of the substrate. The injection port of the injector faces the liner wall creating a radially outward flow of gas. The rewinding and mixing of trimethylaluminum and ozone ensures a uniform gas velocity as the gas flows through the surface of each wafer. The above description of the specific embodiments and examples of the invention has been presented for purposes of illustration and description only, and the invention The above examples are not intended to be exhaustive or to limit the precise mode of the invention disclosed, and many modifications, improvements and variations are possible within the scope of the invention. The scope of the invention is intended to be embraced by the scope of the appended claims and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS These and various other features and advantages of the present invention will become more apparent from the aspects of the appended claims. - 38 ~ (35) 1250586 Figure 1 is a cross-sectional view of an embodiment of a heat treatment apparatus having a base heater of the present invention, which provides an isothermal control volume and uses a conventional upward flow design; Figure 2 is applicable 1 is a perspective view of a substrate embodiment in a heat treatment apparatus shown in FIG. 1. FIG. 3 is a partial cross-sectional view of a heat treatment apparatus according to an embodiment of the present invention, having a base heater and a heat shield; FIG. 4 is an embodiment of the present invention. 5 is an illustration of a base heater and a heat shield shown in FIG. 3; FIG. 5 is an illustration of an embodiment of the heat shield of the present invention, including an upper layer material having high absorbency and a lower layer material having high reflectivity. Figure 6 is an illustration of one embodiment of a thermal shield of the present invention having a cooling flow passage; Figure 7 is a perspective view of one embodiment of the thermal shield and actuator of the present invention; Figure 8 is a heat treatment apparatus of the present invention; A partial cross-sectional view of one embodiment having a spacer; FIG. 9 is a cross-sectional view of an embodiment of a processing chamber of the present invention having a base heater and a magnetically coupled wafer rotating system; FIG. 10 is a heat treatment apparatus of the present invention One A cross-sectional view of an embodiment having a parent fork flow injection system; FIG. 11 is a partial side cross-sectional view of one embodiment of the heat treatment apparatus of the present invention as shown in FIG. 1 , showing the position of the injector bore relative to the liner and The position of the discharge groove relative to the wafer; FIG. 12 is a partial plan view of the heat treatment device of the present invention taken along line A-A of FIG. 10, a real-39-1250586 (36) embodiment, which is not visible from the first injector and The flow of gas ejected from the holes of the second injector passes through the wafer to the discharge port; FIG. 13 is a partial plan view of another embodiment of the heat treatment apparatus of the A-A line of FIG. 1 of the present invention, showing the first injector And a flow of gas ejected from the holes of the second injector through the wafer to the discharge port; FIG. 14 is a partial plan view of a further embodiment of the heat treatment apparatus of the invention along the line A-A of FIG. The flow of gas ejected from the holes of the second injector and through the wafer to the discharge port; FIG. 15 is a partial plan view of the heat treatment device of the invention along the a-A line of FIG. The gas flow from the orifice of the injector and the second injector passes through Circular to discharge port; is an embodiment of the present invention; Figure 16 is a cross-sectional view of one embodiment of the heat treatment apparatus of the present invention, having another upward flow injection system; Figure 17 is a cross-sectional view of one embodiment of the heat treatment apparatus of the present invention There is another downflow injection system; FIG. 18 is a flow chart of an embodiment of the method for heat treating a batch of wafers of the present invention, whereby each wafer in the batch is heated quickly and uniformly Figure 19 is a flow diagram of another embodiment of the method of the present invention for heat treating a batch of wafers whereby each wafer in the batch is rapidly and uniformly heated to the desired Figure 20 is a cross-sectional view of one embodiment of the heat treatment apparatus of the present invention having an injection system; -40-(37) 1250586 Figure 21 is an embodiment of the long tube of the present invention having a plurality of injection ports Figure 2 is a partial cross-sectional side view showing an embodiment of the heat treatment apparatus of the present invention, showing the connection of the injection system having the cross-flow liner and the substrate; Figure 23 is a partial cross-sectional top view of an embodiment of the heat treatment apparatus of the present invention , It shows the connection of the injection system with the cross-flow liner and the substrate; Figure 24 is a partial plan view of the interior liner of the interior showing the opening with depressions; Figure 25 is an embodiment of the cross-flow stepped liner of the present invention External view showing a longitudinally projecting section; Figure 26 is an external view of one embodiment of the cross-flow stepped liner of the present invention showing a plurality of discharge slots in the liner; Figure 27 is a representation of the present invention A plan view of an embodiment of an injection system for a cross-flow liner of a segment showing the flow of gas ejected from the aperture, impinging upon the inner wall of the liner prior to flowing through the wafer and exiting the discharge slot; Figure 28 is the present invention A plan view of an embodiment of an injection system having a cross-flow liner of protruding segments, showing the flow of gas ejected from the holes, colliding with each other before flowing through the wafer and discharging from the discharge trough; FIG. 29 is a protruding section of the present invention A plan view of an embodiment of an injection system for a cross-flow liner showing gas flow ejected from a hole toward a center of the wafer and discharged from the discharge cell; FIG. 30 is an embodiment of the heat treatment apparatus of the present invention For example, the heat treatment apparatus includes an injection system having an injection port toward the center of the substrate for depositing tantalum nitride; -41 - 1250586 (38) FIG. 31 is an embodiment of the heat treatment apparatus of the present invention. An illustration of computational fluid dynamics including an injection system having mutually facing injection ports for depositing tantalum nitride; and FIG. 32 is an illustration of computational fluid dynamics of one embodiment of the heat treatment apparatus of the present invention, The heat treatment apparatus includes an injection system having an injection port facing the inner wall of the inner liner for depositing alumina.

[Main component symbol description]

100 Heat treatment unit 10 1 Container 102 Processing chamber 10 04 Support base 106 Carrier (boat) 108 Wafer 110 Heat source (furnace) 1 12~1 12-3 Heating element 114 Thermocouple 116 Injector 116 Injector 1 1 6A Spray Tube 118 port 120 lining 120 treatment of the inner lining 12 1 vent (groove) -42- 1250586 (39) 122 〇 ring 1 24 substrate 126 front pipe (discharge port) 1 27 cavity 1 28 area (handling Zone) 129 Runner 13 0 Base 13 1 Ring 13 3 Upper flange 134 Top 13 5 Side wall 13 6 Side 13 7 Bottom 13 8 Bottom 咅 139 , 143 Back / rinsing gas inlet 140 Insulation block 14 1 Thermocouple 142 坩埚 144 Channel 145, 147 Cooling port 1 46 Thermal mask 148 Arm 149 Pressure monitoring port 15 0 Rotary axis

-43- 1250586 (40) 151, 161 Process gas inlet 1 52 Upper layer 153 Thermal mask assembly 1 54 Lower layer 15 5 Actuator 15 6 Cooling runner 15 8 Isolation plate 1 62 Wafer rotation system 164 Rotating mechanism 166 Rotating Motor 168 Magnet 170 Steel ring 1 72 Drive shaft 174 Magnet 176 Magnet 180-2 Hole 18 0-1 Hole 1 80 Hole 182-2 Slot 182-1 Slot 1 82 Discharge port (slot) 1 84 First ejector 1 86 Two injectors 2 16-] cross flow injector

-44- 1250586 (41) 23 0 Heat treatment unit 232 Cross flow liner 234 Container 23 6 Processing chamber 23 8 Support base 240 Carrier 242 Wafer 244 Furnace 246 Substrate 250 Crossflow injection system 252 Injection port or hole 254 (lateral) Slot 256 long spray pipe 262 injection inlet 264 0 ring 2 6 6 clamping block 268 lock pin 27 0 top plate 272 opening 274A~274C recess 276 parent fork flow lining 27 8 cylinder 280 closed end 282 open end

-45 1250586 (42) 284 Cry out section 288 First paragraph 290 Second paragraph

-46 -

Claims (1)

1250586 (1) X. Patent Application Scope - A device suitable for heat treating a plurality of substrates supported in a carrier. The device includes a surface for directing reactants and other gases through the surface of each substrate. A cross-flow injection system comprising one or more long tubes 'each of the long tubes being rotatable relative to an axis, and each long tube being provided with a plurality of injection ports. 2. The device of claim 5, wherein the plurality of spray ports are formed in a straight line and are longitudinally distributed in the one or more long tubes. 3. The device of claim 1, wherein the one or more long tubes are rotatable by three hundred and sixty degrees with respect to one axis. 4. The device of claim 1, further comprising a crossflow liner covering the carrier, wherein the crossflow injection system is disposed between the liner and the carrier, and the crossflow The injection system can be rotated by three hundred and sixty degrees. 5. The apparatus of claim 4, wherein the one or more long tubes are rotated such that the ejection openings face the lining, and gas flowing from the ejection openings passes through each The liner is struck prior to the surface of the substrate. 6. The device of claim 4, wherein the one or more long tubes are rotated such that the ejection openings face each other such that gas flowing from the ejection openings passes through the substrate before passing through the substrate. First hit each other. The device of claim 4, wherein the one or more long tubes are rotated such that the ejection openings face toward the center of each substrate. 8. The device of claim 4, wherein the crossflow liner comprises a cylinder having a closed end and an open end, the cylinder being provided with a -47- (2> 1250586 a longitudinal projection, and The cross-flow injection system is housed in the protruding section. 9. The apparatus of claim 8 wherein the cross-flow injection system comprises one or more long tubes housed within the protruding section. The apparatus of claim 9, wherein the open end is provided with two openings for arranging the long tubes. The apparatus of claim 10, wherein the opening The end is provided with a plurality of recesses for directing the ejection openings toward a predetermined direction. 1 2 . A device for heat treating a plurality of substrates held in a carrier, the device comprising: a processing chamber provided for the a substrate-processing region; a cross-flow liner lining the substrates held within the carrier; and a cross-flow jetting system disposed between the carrier and the cross-flow liner To direct one or more gases through the surface of each substrate The cross-flow injection system comprises one or more long tubes, each of which can be rotated relative to a shaft, and each of the long tubes is provided with a plurality of injection ports. 1 3. The device according to claim 12 The processing chamber is sized to handle 1 to 1 〇 0 substrate. The device of claim 12, wherein the cross-flow injection system comprises a first long tube and a a second long tube, each long tube is provided with a plurality of injection ports formed on a line and longitudinally distributed in the tube, wherein each long injection tube can be rotated by three hundred and sixty degrees with respect to one axis. The device of claim 14, wherein the cross-flow lining comprises a cylinder having a closed end and an open end, the cylinder having a longitudinal projection of -48 - 1250586 (3) for receiving the first The apparatus of claim 15, wherein the closed end is provided with an opening for receiving the first and second long spray tubes. The device of item 16, wherein the openings are provided with a plurality of depressions, And each of the spray tubes is provided with a scale pin locked in a recess such that the spray openings in the first and second long spray tubes are oriented in a predetermined direction. The device of claim 2, wherein the cross-flow liner is shaped and sized to fit the carrier, and the inner diameter of the cross-flow liner is from about 104% to about 10% of the diameter of the substrates. 9. The device of claim 18, wherein the cross-flow liner is provided with a plurality of grooves that cooperate with a plurality of injection ports for discharging gas. - 49 -