WO2005031803A9 - Thermal processing system with cross flow injection system with rotatable injectors - Google Patents
Thermal processing system with cross flow injection system with rotatable injectorsInfo
- Publication number
- WO2005031803A9 WO2005031803A9 PCT/US2004/031063 US2004031063W WO2005031803A9 WO 2005031803 A9 WO2005031803 A9 WO 2005031803A9 US 2004031063 W US2004031063 W US 2004031063W WO 2005031803 A9 WO2005031803 A9 WO 2005031803A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flow
- injection
- cross
- liner
- wafers
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006528134A JP2007515054A (en) | 2003-09-25 | 2004-09-22 | Heat treatment system with cross-flow injection system including a rotatable injector |
EP04784778A EP1676294A4 (en) | 2003-09-25 | 2004-09-22 | Thermal processing system with cross flow injection system with rotatable injectors |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50635403P | 2003-09-25 | 2003-09-25 | |
US60/506,354 | 2003-09-25 | ||
US10/946,849 US20050121145A1 (en) | 2003-09-25 | 2004-09-21 | Thermal processing system with cross flow injection system with rotatable injectors |
US10/946,849 | 2004-09-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005031803A2 WO2005031803A2 (en) | 2005-04-07 |
WO2005031803A9 true WO2005031803A9 (en) | 2005-05-26 |
WO2005031803A3 WO2005031803A3 (en) | 2006-12-21 |
Family
ID=34396311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/031063 WO2005031803A2 (en) | 2003-09-25 | 2004-09-22 | Thermal processing system with cross flow injection system with rotatable injectors |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050121145A1 (en) |
EP (1) | EP1676294A4 (en) |
JP (1) | JP2007515054A (en) |
TW (1) | TWI250586B (en) |
WO (1) | WO2005031803A2 (en) |
Families Citing this family (269)
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TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
JP7315607B2 (en) * | 2021-03-16 | 2023-07-26 | 株式会社Kokusai Electric | Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method |
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DE102022002761A1 (en) * | 2022-07-29 | 2024-02-01 | centrotherm international AG | Device for the thermal treatment of substrates, especially semiconductor wafers |
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US3637434A (en) * | 1968-11-07 | 1972-01-25 | Nippon Electric Co | Vapor deposition apparatus |
JPS5817831A (en) * | 1981-07-24 | 1983-02-02 | Fujitsu Ltd | Chemical vapor growth method |
JPS5972721A (en) * | 1982-10-20 | 1984-04-24 | Toshiba Corp | Vapor phase growth device |
US4615294A (en) * | 1984-07-31 | 1986-10-07 | Hughes Aircraft Company | Barrel reactor and method for photochemical vapor deposition |
NL8503163A (en) * | 1984-11-16 | 1986-06-16 | Sony Corp | DEVICE AND METHOD FOR VAPOR PRESSURE. |
DE3885833T2 (en) * | 1987-09-22 | 1994-03-24 | Nec Corp | Chemical vapor deposition apparatus for the production of high quality epitaxial layers with a uniform density. |
JP2683671B2 (en) * | 1988-06-27 | 1997-12-03 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus on semiconductor substrate |
JP2654996B2 (en) * | 1988-08-17 | 1997-09-17 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
JP2732224B2 (en) * | 1994-09-30 | 1998-03-25 | 信越半導体株式会社 | Wafer support boat |
KR100458982B1 (en) * | 2000-08-09 | 2004-12-03 | 주성엔지니어링(주) | Semiconductor device fabrication apparatus having rotatable gas injector and thin film deposition method using the same |
US20030192645A1 (en) * | 2002-04-16 | 2003-10-16 | Applied Materials, Inc. | Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber |
-
2004
- 2004-09-21 US US10/946,849 patent/US20050121145A1/en not_active Abandoned
- 2004-09-22 EP EP04784778A patent/EP1676294A4/en not_active Withdrawn
- 2004-09-22 WO PCT/US2004/031063 patent/WO2005031803A2/en active Application Filing
- 2004-09-22 JP JP2006528134A patent/JP2007515054A/en not_active Abandoned
- 2004-09-23 TW TW093128909A patent/TWI250586B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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TWI250586B (en) | 2006-03-01 |
WO2005031803A3 (en) | 2006-12-21 |
JP2007515054A (en) | 2007-06-07 |
EP1676294A2 (en) | 2006-07-05 |
EP1676294A4 (en) | 2007-10-31 |
WO2005031803A2 (en) | 2005-04-07 |
TW200531174A (en) | 2005-09-16 |
US20050121145A1 (en) | 2005-06-09 |
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