JP2007515054A - Heat treatment system with cross-flow injection system including a rotatable injector - Google Patents

Abstract

  The present invention relates to an apparatus for thermally processing a substrate or wafer held on a carrier. The heat treatment apparatus (230) has an injection system (250) for selectively injecting gas into the processing chamber (236). The injection system (250) includes one or more elongated ports distributed with a plurality of injection ports or orifices (252) for directing reactant and other gas flows across the surface of each wafer (242). Includes injection tube. The elongated infusion tube is rotatable 360 degrees around the axis.

Description

  This application claims the benefit and priority thereto of US Provisional Application No. 60 / 506,354, filed Sep. 25, 2003, the disclosure of which is incorporated herein by reference in its entirety. PCT Application No. PCT entitled “Heat Treatment System and Configurable Vertical Chamber” claiming priority over US Provisional Application Nos. 60 / 396,536 and 60 / 428,526 / US03 / 21575, all of which are incorporated herein by reference in their entirety.

  The present invention relates generally to systems and methods for heat treating an object such as a substrate. More particularly, the present invention relates to an apparatus and method for heat treatment, annealing, and depositing or removing a layer of material from a semiconductor wafer or substrate.

  The heat treatment apparatus is generally used to manufacture an integrated circuit (IC) or a semiconductor element from a semiconductor substrate or wafer. Thermal processing of a semiconductor wafer includes, for example, heat treatment, annealing, diffusion or implantation of dopant material, deposition or growth of a layer of material, and etching or removal of material from a substrate. In these processes, the wafer is heated to a temperature as high as 1300 ° C. and as low as 300 ° C. before and during the process, and one or more fluids such as process gases or reactants are applied to the wafer. Often need to be sent to Furthermore, these processes generally require that the wafer maintain a uniform temperature throughout the process, even if the temperature of the process gas or the rate at which it is introduced into the process chamber changes.

  Conventional heat treatment equipment typically consists of a processing chamber that is positioned in or surrounded by a furnace and is bulky. The substrate to be heat treated is sealed in a processing chamber, which is heated in a furnace to the desired temperature at which the next processing takes place. For many processes, such as “Chemical Vapor Deposition” (CVD), the sealed process chamber is first evacuated, and with the process chamber reaching the desired temperature, a reaction gas or process gas is introduced to the To form or deposit reactive species.

  Conventionally, in a general heat treatment apparatus, particularly a vertical heat treatment apparatus, it has been necessary to arrange a protective heater adjacent to the side wall of the processing chamber above or below the processing area for processing the product wafer. This arrangement is undesirable because it involves a large chamber volume that needs to be depressurized and filled, refilled or purged with process gas or vapor, resulting in increased process time. Furthermore, this configuration requires very large space and power because the visibility from the heater to the wafer is not good.

  Other problems with conventional thermal processing equipment include the need for considerable time both to raise the temperature of the processing chamber and the wafer to be processed before processing and to decrease the temperature after processing. Further, additional time is often required to ensure that the temperature of the processing chamber is uniformly stabilized at the desired temperature before processing can begin. The actual time required to process the wafer can be 30 minutes or less, but pre-processing time and post-processing time typically takes 1-3 hours or more. Thus, the processing capacity of conventional thermal processing equipment is significantly limited by the time required to rapidly raise and / or lower the temperature of the processing chamber to a uniform temperature.

  The underlying reason for the relatively long rise and fall times is the amount of heat in the process chamber and / or furnace in a conventional heat treatment apparatus that needs to be heated or cooled before the wafer is effectively heated or cooled.

  A common approach to minimizing or offsetting the limiting factor in throughput of this conventional thermal processing apparatus is to increase the number of wafers that can be processed in a single cycle or implementation. Processing multiple wafers simultaneously reduces the effective processing time of unit wafers and helps to maximize the effective processing capacity of the apparatus. However, with this method, if a problem occurs during processing, the scale of the risk increases. That is, for example, if there is an equipment or process failure during a single processing cycle, it is possible that a single failure could destroy or damage many wafers. This is of particular concern for large wafer sizes and for more complex integrated circuits where a single wafer can be worth $ 1,000 to $ 10,000 depending on the stage of processing. .

  Another problem with this solution is that increasing the size of the processing chamber to accommodate a large number of wafers increases the calorimetric effect of the processing chamber, thereby speed at which the wafer can be heated or cooled. Is to slow down. In addition, processing larger batches of wafers in a larger processing chamber results in a first-in-last-out syndrome that worsens or worsens the first loaded wafer in the chamber, which is also the last removed wafer. Are exposed to high temperatures for extended periods of time, reducing uniformity across a batch of wafers.

  Another problem with the above approach is that the systems and equipment used for many of the processes before and after the heat treatment are not suitable for processing multiple wafers simultaneously. That is, even if a large batch or a large number of wafers are heat treated while increasing the throughput of the heat treatment apparatus, it is necessary to accumulate the wafers before the heat treatment apparatus or in other systems and devices downstream thereof. The failure caused by the wafer can hardly improve the overall throughput of the semiconductor fabrication facility and may actually reduce it.

  An alternative to the conventional thermal processing apparatus described above is a rapid thermal processing (RTP) system developed for rapid thermal processing of wafers. Conventional rapid thermal processing (RTP) systems typically use high intensity lamps to selectively heat a single wafer or a small number of wafers in a small, transparent, typically quartz processing chamber. The rapid thermal processing (RTP) system minimizes or eliminates the thermal effect of the processing chamber, and the heat of the lamp is very small, so that the wafer is heated rapidly by turning the lamp on and off instantaneously. And can be cooled.

  Unfortunately, conventional rapid thermal processing (RTP) systems have significant drawbacks, including lamp placement, and the systems are conventionally arranged in areas or banks each composed of a number of lamps adjacent to the sidewalls of the processing chamber. It had been. This configuration has a problem that its visibility is not good and requires a very large space and power to be effective, all of which is a necessary compensation for the latest generation of semiconductor processing equipment.

  Another problem with conventional rapid thermal processing (RTP) systems is that a uniform temperature distribution cannot be achieved across multiple wafers within a single batch of wafers and even across a single wafer. This non-uniform temperature distribution is due to (i) poor visibility of one or more wafers by one or more lamps, and (ii) output power from the lamps. There are a number of reasons, including fluctuations.

  Furthermore, poor or variable output of a single lamp can adversely affect the temperature distribution across the wafer. For this reason, most lamp-based systems rotate one or more wafers to ensure that temperature non-uniformities due to variations in lamp power are not transmitted to the wafer during processing. However, the moving parts required to rotate the wafer, particularly rotating penetrations into the processing chamber, increase the cost and complexity of the system and reduce its overall reliability.

  Yet another troublesome part of the rapid thermal processing (RTP) system is to maintain a uniform temperature distribution across the outer edge and center of the wafer. Most conventional rapid thermal processing (RTP) systems do not have adequate means to adjust for this type of temperature non-uniformity. As a result, transient temperature fluctuations occur across the surface of the wafer, which can lead to the formation of wafer misalignment transitions at high temperatures unless a black body susceptor with a diameter larger than the wafer is used.

  Conventional lamp-based rapid thermal processing (RTP) systems also have other drawbacks. For example, without the use of phase angle control to generate electrical noise, there is no suitable means to provide uniform power distribution and temperature uniformity during transient periods such as when the lamp is powered on and off. Performance reproducibility is also usually a drawback of lamp-based systems because performance tends to vary as each lamp ages. Lamp replacement can also be costly and time consuming, especially considering that a given lamp system may have more than 180 lamps. Power requirements can also be costly because the peak power consumption of the lamp can be about 250 kilowatts.

  Accordingly, there is a need for an apparatus and method for rapidly and uniformly heating a batch of one or more substrates to a desired temperature across the surface of each substrate in the batch during heat treatment.

  The present invention provides a solution to these and other problems, as well as other advantages over the prior art.

  The present invention provides a workpiece, such as a semiconductor substrate or wafer, for performing processes such as annealing, diffusion or implantation of dopant material, deposition or growth of a layer of material, and etching or removal of material from a wafer. An apparatus and method for isothermally heating an object is provided.

  The heat treatment apparatus is provided to treat the substrate held on the carrier at a high temperature or an elevated temperature. The apparatus is proximate to the processing chamber having an upper wall, sidewalls, and lower wall to provide an isothermal environment for a processing chamber having a top wall, sidewalls, and a lower wall and a processing area in which a carrier is positioned to heat treat the substrate. And a heating source having a number of heating elements. According to one aspect, the dimensions of the processing chamber are selected to surround a volume that is not substantially larger than the volume required to accommodate the carrier, and the processing area is substantially through the processing chamber. It extends. Preferably, the dimensions of the processing chamber are selected to encompass a volume that is not substantially greater than 125% of the volume required to accommodate the carrier. More preferably, the apparatus further comprises a pump system for evacuating the process chamber before applying process pressure, and a purge system for refilling the process chamber after the process is complete, wherein the dimensions of the process chamber are: It is selected to perform both rapid evacuation and rapid refilling of the processing chamber.

  According to another aspect of the invention, the lower wall of the processing chamber includes a movable base having at least one heating element, the movable base inserting or removing a carrier with a substrate into the processing chamber. Go down and up so that you can. In one embodiment, the apparatus further includes a removable thermal shield configured to be inserted between the heating element in the base and the substrate held by the carrier. The thermal shield is configured to reflect back the thermal energy from the heating element in the base to the base and shield the substrate on the carrier from the thermal energy from the heating element in the base. In one version of this embodiment, the apparatus further includes a shutter configured to move into position above the carrier to isolate the processing chamber when the base is in the lowered position. If the apparatus includes a pump system for evacuating the process chamber, the shutter is adapted to seal the process chamber, thereby allowing the pump system to evacuate the process chamber when the base is in the lowered position. enable.

  In yet another embodiment, the apparatus further includes a magnetic coupling repositioning system that repositions the carrier during thermal processing of the substrate. Preferably, the mechanical energy used to reposition the carrier is based on the substrate without using a movable penetrator into the processing chamber and without substantially moving the heating element in the base. It is magnetically coupled to the carrier past the platform. More preferably, the magnetic coupling repositioning system is a magnetic coupling rotation system that rotates the carrier in the processing area during thermal processing of the substrate.

  In accordance with yet another aspect of the present invention, an apparatus provides a liner that separates a carrier from the top and side walls of a processing chamber and a distribution that directs fluid flow across each surface of a substrate held by the carrier. Or a cross flow injection system. Cross-flow injection systems typically include a cross-flow injector that has a number of injection ports positioned relative to a substrate held by a carrier through which fluid is introduced to one side of the number of substrates. included. Due to the numerous exhaust ports of the liner positioned relative to the substrate held by the carrier, fluid flows across the surface of the substrate. The fluid introduced by the cross flow injection system can include a process gas or vapor and an inert purge gas or vapor that is used to purge or refill the chamber or cool the substrate within.

  In another aspect, the apparatus of the present invention includes an injection system provided for selectively injecting a gas into a processing chamber. In general, the injection system of the present invention includes one or more injection ports or orifices distributed therein to direct reactant and other gas flows across the surface of each substrate. Including an elongated infusion tube. The elongate infusion tube is rotatable 360 degrees around the axis.

  In another embodiment, the apparatus of the present invention comprises a processing chamber that provides a processing region for a plurality of substrates held on a carrier, a cross-flow liner surrounding the carrier, and one or more gas flows. A cross-flow injection system disposed between the carrier and the cross-flow liner to guide the substrate across the surface of each substrate. The cross flow injection system includes a plurality of injection ports rotatable about an axis.

  These and various other features and advantages of the present invention will become apparent upon reading the following detailed description in conjunction with the accompanying drawings and the claims set forth below.

  The present invention provides a relatively small number or mini-batch of one or more workpieces, such as semiconductor substrates or held on a carrier such as a cassette or boat, to reduce processing cycle time and improve processing uniformity. The present invention relates to an apparatus and method for processing a wafer.

  As used herein, the term “minibatch” refers to a large number of wafers, preferably in the range of 1 to about 53, less than the few hundred wafers found in a typical batch system. For example, 1 to 50 are product wafers, and the rest are non-product wafers used for monitoring purposes and as baffle wafers.

  Heat treatment refers to the process by which the workpiece or wafer is heated to the desired temperature, typically in the range of about 350 ° C to 1300 ° C. Thermal processing of a semiconductor wafer includes, for example, heat treatment, annealing, diffusion or implantation of dopant material, deposition or growth of a layer of material such as chemical vapor deposition or CVD, and etching or removal of material from the wafer.

  Here, with reference to FIG. 1, the heat processing apparatus by embodiment is demonstrated below. For the sake of clarity, many details of the heat treatment apparatus known or known to those skilled in the art have been omitted. Such details are described in more detail in, for example, US Pat. No. 4,770,590, which is incorporated herein by reference, and assigned to the present applicant.

  FIG. 1 is a cross-sectional view of an embodiment of a heat treatment apparatus for heat treating a batch of semiconductor wafers. As shown, the thermal processing apparatus 100 generally includes a container 101 that encloses a volume for forming a processing chamber 102, which is a carrier or boat 106 that holds a batch of wafers 108. The heat treatment apparatus 100 further includes a heat source or furnace 110, which raises the temperature of the wafer to a desired temperature for heat treatment. A plurality of heating elements 112-1, 112-2, 112-3 (hereinafter collectively referred to as heating elements 112). The heat treatment apparatus 100 may be one or two, such as a resistance thermometer (RTD) or thermocouple (T / C), to monitor the temperature within the processing chamber 102 and / or to control the operation of the heating element 112. The above optical or electrical temperature sensing element is further provided. In the illustrated embodiment, the temperature sensing element is a profile thermocouple (T / C) having a plurality of independent temperature sensing nodes or points (not shown) for detecting temperatures at multiple sites within the processing chamber 102. 114. The thermal processing apparatus 100 also includes one or more injectors 116 (only one of which is shown) for introducing a fluid such as a gas or vapor to process and / or cool the wafer 108 into the processing chamber 102; It has one or more purge ports or vents 118 (only one of which is shown) for introducing a gas to purge the process chamber and / or cool the wafer. The liner 120 increases the concentration of process gas or vapor in the vicinity of the wafer 108 in the processing area or processing area 128 of the wafer so that deposits that may form on the inner surface of the processing chamber 102 are stripped or peeled off. Reduces wafer contamination due to Process gas or vapor exits the process area through the exhaust port or slot 121 of the chamber liner 120.

  Generally, the vessel 101 is sealed to the platform or bottom plate 124 by a seal, such as an O-ring 122, to form a processing chamber 102 that completely surrounds the wafer 108 during heat treatment. The dimensions of the processing chamber 102 and bottom plate 124 are selected to rapidly evacuate, heat, and refill the processing chamber rapidly. In an advantageous manner, the container 101 and bottom plate 124 define a processing chamber 102 having dimensions selected to enclose a volume that is not substantially larger than the volume required to accommodate the carrier 106 that holds the wafer 108. Sized to compose. Preferably, the container 101 and bottom plate 124 are sized and more preferably configured to form a processing chamber 102 having a size of about 125 to about 150% of the size required to accommodate the carrier 106 holding the wafer 108. The process chamber has dimensions that do not exceed about 125% of the dimensions required to accommodate carriers and wafers in order to minimize the chamber volume and serve the time required for decompression and refilling. .

  The openings for the injector 116, thermocouple (T / C) 114, and vent 118 use seals such as O-rings, “VCR®” or “CF®” fittings. Sealed. Gas or vapor released or introduced during processing is exhausted through a foreline or exhaust port 126 formed in a plenum 127 of a sidewall (not shown) of the processing chamber 102 or bottom plate 124 as shown in FIG. . The processing chamber 102 may be maintained at atmospheric pressure during the heat treatment and includes a pump system (not shown) that includes one or more coarse pumps, blowers, high vacuum pumps, coarse throttles, and foreline valves. It may be evacuated until a vacuum as low as 5 millitorr is used.

  In another embodiment shown in FIG. 2, the bottom plate 124 further includes a substantially annular flow channel 129 configured to receive and support the injector 116, which is a multiplicity of vertical injections. The vessel or injector 116A includes a ring 131 that extends. Injector 116A may be sized and shaped to form an upflow, downflow, or crossflow flow pattern, as described below. The ring 131 and the injector 116 </ b> A are arranged to inject gas into the processing chamber 102 between the boat 106 and the container 101. The injector 116A is also spaced around the ring 131 to introduce the process gas or vapor uniformly into the process chamber 102, and to introduce a purge gas into the process chamber as needed. May be used during purging or refilling. The bottom plate 124 is dimensioned to be in the form of a short cylinder with an outwardly extending upper flange 133, a sidewall 135, and an inwardly extending base 137. The upper flange 133 is configured to receive and support the container 101 and contains an O-ring 122 for sealing the container 101 against the upper flange. The base 137 is configured to receive and support the liner 120 outside the location where the ring 131 of the injector 116 is supported.

  In addition, the bottom plate 124 shown in FIG. 2 monitors the pressure in the processing chamber 102 and refill / purge gas inlet ports 139 and 143, cooling ports 145 and 147 provided to circulate cooling fluid through the bottom plate 124. There are various ports including a pressure monitor port 149 for performing. Process gas inlet ports 151 and 161 introduce gas from a source (not shown) into the injector 116. Refill / purge ports 139 and 143 are in principle provided on the side wall 135 of the bottom plate 124 for introducing gas from a vent / purge gas supply (not shown) to the vent 118. A mass flow controller (not shown) or any other suitable flow controller is in-line between the gas source and the ports 139, 143, 151, 161 to control the gas flow entering the processing chamber 102. Is arranged in.

  Vessel 101 and liner 120 can withstand any thermal and mechanical stresses of high temperature and high vacuum operation, and can be any metal, ceramic, quartz, resistant to erosion by gases and vapors used or released during processing. Or made of glass material. Preferably, the container 101 and liner 120 are made of an opaque, translucent, or transparent quartz glass that has a thickness sufficient to withstand mechanical stress and is resistant to deposition of processing by-products, Thereby reducing the possibility of contamination of the processing environment. More preferably, the container 101 and liner 120 are made of quartz that reduces or eliminates heat conduction from the region or processing area 128 where the wafer 108 is processed.

  A batch of wafers 108 can be introduced into the thermal processing apparatus 100 through a load lock or load port (not shown), and then an entrance or opening in the processing chamber or bottom plate 124 that can form a hermetic seal with the processing chamber 102. Through the process chamber 102. In the configuration shown in FIG. 1, the processing chamber 102 is a vertical reactor, and a movable base 130 is used as an entrance and exit. And an automatic handling system such as an operator or boat handling unit (BHU) (not shown) positions the carrier or boat 106 on a support 104 fixed to a movable base. Go down to allow.

  The heating element 112 has elements positioned near the top 134 (heating element 112-3), side 136 (heating element 112-2), and bottom 138 (heating element 112-1) of the processing chamber 102. ing. Advantageously, the heating element 112 surrounds the wafer to achieve a condition that makes the wafer visible, thereby providing an isothermal control volume or processing area 128 within the processing chamber that processes the wafer. is there. A heating element 112-1 proximate to the bottom 138 of the processing chamber 102 may be disposed in or on the base 130. If necessary, additional heating elements may be placed in or on the bottom plate 124 to supplement the heat from the heating elements 112-1.

  In the embodiment shown in FIG. 1, preferably, the heating element 112-1 proximate to the bottom of the processing chamber is housed in a movable base 130. The base 130 may be embedded with an electrical resistance heating element 112-1 or may be made of a thermal and electrical insulation material or insulation block 140 secured thereto. The base 130 further includes one or more feedback sensors or thermocouples (T / C) 141 that are used to control the heating element 112-1. In the configuration shown here, the thermocouple (T / C) 141 is embedded in the center of the heat insulating block 140.

  The side heating element 112-2 and the upper heating element 112-3 may be disposed in or on the insulating block 110 around the container 101. Preferably, the side heating element 112-2 and the upper heating element 112-3 are housed within the heat insulation block 110.

  The heating element 112 and the insulation blocks 110 and 140 are constructed in any of a variety of ways and are made of any of a variety of materials using any of a variety of methods.

  Preferably, to achieve a desired processing temperature of up to 1150 ° C., the maximum power of heating element 112-1 proximate the bottom 138 of processing chamber 102 is between about 0.1 kW and about 10 kW, and the maximum processing temperature is At least 1150 ° C. More preferably, the output of these bottom heating elements 112-1 is at least about 3.8 kW and the maximum processing temperature is at least 950 ° C. In one embodiment, the side heating element 112-2 is functionally divided into a plurality of areas including a lower area and an upper area near the base 130, each of which is relative to each other and the upper heating element 112-3. And may be operated independently at a different power level and duty cycle than the bottom heating element 112-1.

  The heating element 112 is controlled in any suitable manner using control techniques of the type known in the art.

  Contamination from the insulation block 140 and the bottom heating element 112-1 is not eliminated by housing the heating element and insulation block in an inverted quartz crucible 142 that acts as a barrier between the heating element and insulation block and the processing chamber 102. Decrease. The crucible 142 is also sealed against the load port and boat handling unit (BHU) environment, further reducing or eliminating contamination of the processing environment. In general, because the interior of the crucible 142 is at standard atmospheric pressure, the crucible 142 is sufficiently strong to withstand a differential pressure on the order of 1 atmosphere between the processing chamber 102 and the base 130 throughout. Need to be.

  While loading or unloading the wafer 108, ie, while the base 130 is in the lower position (FIG. 3), power is applied to the bottom heating element 112-1 to make the bottom heating element 112-1 desirable. Maintain an idle temperature lower than the processing temperature. For example, in a process where the desired processing temperature for the bottom heating element is 950 ° C, the idle temperature is 50-150 °. For certain processes, such as processes with a high desired processing temperature and / or processes with a high desired rate of increase, or to extend element life by reducing thermal cycling effects on the bottom heating element 112-1 It is better to set the temperature higher.

  In order to further reduce the processing time, i.e., the time required to prepare the thermal processing apparatus 100 for processing, the base 130 on which the boat 106 of the wafer 108 is positioned is raised during pushing-in or loading. During this time, the bottom heating element 112-1 may be raised to the desired processing temperature or lower. However, in order to minimize thermal stresses acting on the wafer 108 and the components of the thermal processing apparatus 100, the bottom heating element 112-1 is placed near the top 134 and side 136 of the processing chamber 102, respectively. It is preferable to reach the desired processing temperature simultaneously with -3 and 112-2. Thus, in some processes, such as those requiring higher processing temperatures, the temperature of the bottom heating element 112-1 may be the base during the last wafer 108 of a batch being loaded. It may be desirable to begin to rise before 130 begins to rise.

  Similarly, when the wafer 108 is cooled and prepared for removal by the boat handling unit (BHU), the bottom heating element 112-1 after processing and during the withdrawal or removal cycle, that is, while the base 130 is lowered. It will be appreciated that it may be desirable to reduce or completely remove power to the base 130 and begin to lower the base 130 to idle temperature.

  A purge line for an inert purge gas such as air or nitrogen may be provided through the insulation block 140 to help cool the base 130 to the extraction temperature prior to the extraction or extraction cycle. Good. Preferably, nitrogen is injected from a passage 144 through the center of the insulation block 140 to allow it to flow between its upper part and the interior of the crucible 142. The hot nitrogen is then exhausted through a “High Performance Particulate Air (HEPA)” filter (not shown) to the ambient or facility exhaust system (not shown). This center implant configuration facilitates rapid cooling of the center of the wafer 108 and is therefore ideal for minimizing the center / edge temperature difference of one or more bottom wafers, and so on. Otherwise, there is a possibility of causing damage due to a shift transition of the crystal lattice structure.

  As mentioned above, in order to increase or extend the life of the bottom heating element 112-1, the idle temperature may be increased to reduce the effects of thermal cycling and set close to the desired processing temperature. It is also desirable to periodically bake out the heating element 112-1 in a high oxygen environment to facilitate the formation of a protective oxide surface coating. For example, when the resistance heating element is formed of an aluminum-containing alloy such as “Kanthal®”, baking the heating element 112-1 in a high oxygen environment promotes an increase in the surface of the alumina oxide. Accordingly, the insulation block 140 may further include an oxygen line (not shown) to facilitate the formation of a protective oxide surface coating during the baking of the heating element 112-1. Alternatively, oxygen for bakeout may be introduced through a purge line used during processing and cooled nitrogen supplied through a three-way valve.

  FIG. 3 is a cross-sectional view of a part of the heat treatment apparatus 100. FIG. 3 shows the heat treatment apparatus 100 while the wafer 108 is being loaded or unloaded, that is, while the base 130 is in the lower position. In this mode of operation, the heat treatment apparatus 100 further includes a thermal shield 146 that may be rotated or slid into place above the base 130 and the lower wafer 108 of the boat 106. . In order to improve the performance of the thermal shield 146, the thermal shield is generally reflective on the side facing the heating element 112-1 and absorbent on the side facing the wafer 108. The purpose of the thermal shield 146 is to increase the rate at which the lower wafer 108 in the boat 106 is cooled and to maintain the idle temperature of the base 130 and the bottom heating element 112-1, so that the processing chamber 102 is at the desired processing temperature. Including shortening the time required to ascend. With reference to FIGS. 3-6, embodiments of a heat treatment apparatus having a thermal shield will now be described in more detail below.

  FIG. 3 also shows an embodiment of a heat treatment apparatus 100 having a base heating element 112-1 and a heat shield 146. In the illustrated embodiment, the thermal shield 146 is attached to a rotatable shaft 150 through an arm 148 and the shaft 150 is rotated by an electrical, pneumatic, or hydraulic actuator to rotate the thermal shield 146. Thus, during a draw or remove cycle, the thermal shield 146 is placed in a first position between the heating base 130 and the bottom wafer 108 in the boat 106, at least at the end or end of the intrusion or loading cycle. In between, just before the bottom of the boat 106 enters the chamber 102, the thermal shield 146 is removed or rotated to a second position that is not between the base and the wafer. Preferably, the rotatable shaft 150 is mounted or secured to a mechanism (not shown) used to raise and lower the base 130 so that the top of the base passes through the processing chamber 102. As a result, the heat shield 146 can be immediately rotated and positioned at a proper position. If the shield 146 is in place during the loading cycle, the heating element 112-1 can be heated to the desired temperature more rapidly than otherwise possible. Similarly, during the removal cycle, the shield 146 helps cool the wafer, particularly the wafer close to the base, by reflecting the heat radiated from the base heating element 112-1.

  As a modification, the rotatable shaft 150 may be attached or fixed to another part of the heat treatment apparatus 100, may move in the axial direction in synchronization with the base 130, or the base is completely lowered. In this case, the heat shield 146 may be rotated and positioned at a proper position.

  FIG. 4 is a schematic diagram of the base heating element 112-1 and thermal shield 146 of FIG. 3, in which the thermal energy or heat radiated from the bottom heating element is reflected back to the base 130 for one batch or stack. The heat energy or heat radiated from the wafer 108 below is absorbed. It has been determined that desirable properties, high reflectivity and high absorption, can be obtained using several different materials, such as metals, ceramics, glass, or polymer coatings, individually or in combination. By way of example, the following table lists various suitable materials and corresponding parameters.

  According to one embodiment, the thermal shield 146 is a single material, such as silicon carbide (SiC), opaque quartz, stainless steel, that is polished on one side and abraded on the other, worn or roughened. Made of steel. If the surface of the heat shield 146 is rough, its heat transfer property, particularly its reflectivity, may change considerably.

  In another embodiment, the thermal shield 146 is made of two different material layers. FIG. 5 illustrates a thermal shield 146 having a highly absorbent upper layer 152 of a material such as SiC or opaque quartz and a highly reflective lower layer 154 of a material such as polished stainless steel or polished aluminum or metal. FIG. The upper layer 152 or the lower layer 154 is shown to have approximately equal thicknesses, but depending on the specific requirements of the thermal shield 146, such as minimizing thermal stress between layers due to differences in thermal expansion coefficients. It will be appreciated that any thickness may be thicker. For example, in certain embodiments, the lower layer 154 may be a very thin layer or film of metal deposited, formed or plated and polished on a quartz plate that forms the upper layer 152. The materials may be formed integrally, joined together, or joined by conventional means such as gluing or fastening.

  In yet another embodiment, the thermal shield 146 further includes an internal cooling channel 156 to further insulate the wafer 108 from the bottom heating element 112-1. In one form of this embodiment shown in FIG. 6, the cooling channel 156 is formed between two different material layers 152, 154. For example, the cooling channel 156 is formed in the highly absorbent opaque quartz layer 152 by milling or any other suitable technique and covered with a metal layer or coating 154 such as a titanium or aluminum coating. As a modification, the cooling channel 156 may be formed in the metal layer 154, or may be formed in both the metal layer 154 and the quartz layer 152.

  FIG. 7 is a perspective view of an embodiment of a heat shield assembly 153 having a heat shield 146, an arm 148, a rotatable shaft 150, and an actuator 155.

  As shown in FIG. 8, the heat treatment apparatus 100 further includes a shutter 158 that isolates the processing chamber 102 from the outside or load port environment when the base 130 is in the fully lowered position. , Rotated, slid or otherwise moved into place above the boat 106. For example, the shutter 158 is slid into place above the carrier 106 when the base 130 is in the lower position and then raised to isolate the processing chamber 102. Alternatively, the shutter 158 rotates or swings back and forth when the base 130 is in the lower position and is placed in place above the carrier 106 and then rises to isolate the processing chamber 102. Optionally, the shutter 158 pivots back and forth by rotating about or against a threaded screw or rod so as to raise the shutter at the same time as being placed in place above the carrier 106. , Isolate the processing chamber 102.

  In a processing chamber 102 that normally operates under vacuum, such as a CVD system, the shutter 158 forms a vacuum seal against the bottom plate 124, allowing the processing chamber 102 to be pumped down or depressurized to the processing pressure or vacuum. For example, it may be desirable to reduce or eliminate the possibility of contaminating the processing environment by depressurizing the processing chamber 102 during successive batches of wafers. The formation of the vacuum seal is preferably done with a large diameter seal, such as an O-ring, and therefore the shutter 158 preferably has several water channels 160 to cool the seal. In the embodiment shown in FIG. 8, the shutter 158 is sealed with the same O-ring 132 as the O-ring used to seal the crucible 142 when the base 130 is in the raised position.

  In the thermal processing apparatus 130 where the processing chamber 102 typically operates at atmospheric pressure, the shutter 158 is simply an insulating plug designed to reduce heat loss from the bottom of the processing chamber. In one embodiment to achieve this, an opaque quartz plate may be utilized, which may further include a number of cooling channels under or within the shutter 158, and those May not be included.

  When the base 130 is in the fully lowered position, the shutter 158 moves to a position below the processing chamber 102 and then one or more electrical, hydraulic, or pneumatic actuators (not shown). To isolate the processing chamber. Preferably, the actuator is a pneumatic actuator using about 15-60 pounds per square inch (PSIG) of air at gauge pressure, which is generally utilized in the thermal processing apparatus 100 for operating a pneumatic valve. Is possible. For example, in one form of this embodiment, the shutter 158 may include a plate with several wheels attached to the two sides of the shutter via short arms or cantilevers. The plate or shutter 158 rolls on two parallel guide rails and is in place under the processing chamber 102 in operation. Then, the cantilever is rotated by a stopper on the guide rail, and the movement of the shutter 158 is converted in the upward direction to seal the processing chamber 102.

  As shown in FIG. 9, the thermal processing apparatus 100 further includes a magnetically coupled wafer rotation system 162 that rotates the support 104 and boat 106 with the wafers 108 supported thereon during processing. As the wafer 108 is rotated during processing, any non-uniformities within the heating element 112 and in the process gas stream are averaged, and the temperature and species reaction characteristics on the wafer are uniform, thereby allowing for in-wafer (WIW). Improves uniformity. In general, the wafer rotation system 162 may rotate the wafer 108 at a speed of about 0.1 to about 10 revolutions per minute (RPM).

  The wafer rotation system 162 includes a drive assembly or rotation mechanism 164 having a rotation motor 166, such as an electric or pneumatic motor, and a magnet 168 encased in a chemically resistant container such as polytetrafluoroethylene or annealed stainless steel. Have. Another magnet disposed on the heat insulating block on the upper surface portion of the base by the steel ring 170 disposed just below the heat insulating block 140 of the base 130 and the drive shaft 172 integral with the heat insulating block. 174. A steel ring 170, drive shaft 172, and second magnet 174 are also placed in the chemically resistant container composite. A magnet 174 disposed on the side of the base 130 is magnetically coupled past the crucible 142 to a steel ring or magnet 176 embedded or secured in the support 104 of the processing chamber 102.

  By magnetically coupling the rotating mechanism 164 past the base 130, it is not necessary to place the rotating mechanism 164 in the processing environment or to have a mechanical penetration, thereby reducing leakage and contamination. There is no cause that could cause it. Further, positioning the rotation mechanism 164 outside the processing portion at some distance from it minimizes the maximum temperature to which the rotation mechanism 164 is exposed, thereby improving the reliability of the wafer rotation system 162 and extending the operational life. .

  In addition to the above, the wafer rotation system 162 ensures proper positioning of the boat 106 and proper magnetic coupling between the steel ring or magnet 176 in the processing chamber 102 and the magnet 174 in the base 130. In order to guarantee, one or more sensors (not shown) are further included. A sensor that determines the relative position of the boat 106, that is, a boat position confirmation sensor is particularly useful. In one embodiment, the boat position verification sensor includes a sensor protrusion (not shown) on the boat 106 and a light or laser sensor disposed below the bottom plate 124. In operation, after processing the wafer 108, the base 130 is lowered about 3 inches below the bottom plate 124. At this time, the wafer rotation system 162 is instructed to rotate the boat 106 until the boat sensor protrusion can be detected. The wafer rotation system 162 is then activated and the boat is aligned so that the wafers 108 can be removed. After this is done, the boat is lowered to the loading / unloading height. After the initial inspection, it is only possible to confirm the boat part from the flag sensor.

  As shown in FIG. 10, the improved injector 216 is preferably used in the heat treatment apparatus 100. The injector 216 is a distributed or crossed (X-shaped) flow injector 216-1 where process gas or vapor is introduced from the injector opening or orifice 180 on one side of the wafer 108 and boat 106 in a laminar flow. It flows across the surface of the wafer and exits from the exhaust port or slot 182 of the opposite chamber line 120. In the X-shaped flow injector 116-1, the process gas or vapor distribution is improved over the previous upward flow or downward flow configuration, improving the wafer 108 with respect to wafer uniformity within a batch of wafers 108.

  In addition, the X-shaped flow injector 216 can serve other purposes, including injection of a cooling gas (eg, helium, nitrogen, hydrogen) for forced convection cooling between the wafers 108. With the X-shaped flow injector 216, compared to the previous upward or downward flow configuration, between the wafer 108 placed at the bottom or top of one stack or batch and the wafer placed in between. Is further uniformly cooled. Preferably, the orifice 180 of the injector 216 is sized, shaped and positioned to form a spray pattern that promotes forced convection cooling between the wafers 108 so that there is no significant temperature gradient across the wafer. Good.

  FIG. 11 is a cross-sectional side view of a portion of the thermal processing apparatus 100 of FIG. 10 showing an exemplary portion of the injector orifice 180 associated with the chamber liner 120 and the exhaust slot 182 associated with the wafer 108.

  FIG. 12 is a plan view of a portion of the thermal processing apparatus 100 of FIG. 10 taken along line AA of FIG. 10, and orifices 180-1 and 180- of the primary injector 184 and secondary injector 186, respectively, according to one embodiment. 2 shows a gas flow flowing in layers from 2 to one of the exemplary wafers 108 to exhaust slots 182-1 and 182-2. The position of the exhaust slot 182 shown in FIG. 10 is shifted from the positions of the exhaust slots 182-1 and 182-2 shown in FIG. 12, so that the exhaust slot and injector 116-1 are shown in a single cross-sectional view of the heat treatment apparatus. It should be noted that Also, the dimensions of the injectors 184, 186 and exhaust slots 182-1, 182-2 relative to the wafer 108 and chamber liner 120 are exaggerated to clearly show the gas flow from the injector to the exhaust slot. You should be careful.

  Also, as shown in FIG. 12, the process gas or vapor is initially directed away from the wafer 108 toward the liner 120 to facilitate mixing of the process gas or vapor before reaching the wafer. . This configuration of the orifices 180-1, 180-2 is, for example, in a process or method in which different reactants are introduced from each of the primary injector 184 and the secondary injector 186 to form a multi-component film or layer. It is particularly useful.

  FIG. 13 is another plan view of a portion of the thermal processing apparatus 100 of FIG. 10 taken along line AA of FIG. 10 from the orifices 180 of the primary injector 184 and secondary injector 186 according to another embodiment. FIG. 6 illustrates a modified gas flow path that traverses one exemplary of the gas flow to an exhaust slot 182.

  FIG. 14 is another plan view of a portion of the thermal processing apparatus 100 of FIG. 10 taken along line AA of FIG. 10, and from the orifices 180 of the primary and secondary injectors 184 and 186 according to yet another embodiment. An alternative gas flow path is shown that traverses one exemplary 108 to an exhaust slot 182.

  15 is another plan view of a portion of the thermal processing apparatus 100 of FIG. 10 taken along line AA of FIG. 10 and from the orifices 180 of the primary and secondary injectors 184 and 186 according to yet another embodiment. An alternative gas flow path is shown that traverses one exemplary 108 to an exhaust slot 182.

  FIG. 16 is a cross-sectional view of a heat treatment apparatus 100 having two or more upward flow injectors 116-1, 116-2 according to a modified embodiment. In this embodiment, process gas or vapor entered from process injectors 116-1, 116-2 having respective exit orifices at a lower location in process chamber 102 flows upward across wafer 108 and is consumed. Gas exits exhaust slot 182 on the top surface of liner 120. An upward flow injector system is also shown in FIG.

  FIG. 17 is a cross-sectional view of a heat treatment apparatus 100 having a downward flow injector system according to a modified embodiment. In this embodiment, process gas or vapor introduced from process injectors 116-1, 116-2, each having an exit orifice at a high position in process chamber 102, flows downward across wafer 108 and is consumed. Exits the exhaust slot 182 in the lower section of the liner 120.

  In an advantageous manner, the injectors 116, 216 and / or the liner 120 can be quickly and with other injectors and liners having different locations for injecting process gas and different locations for exhausting from the process area 128. It should be easily replaced or replaced. In the embodiment of the X-shaped flow injector 216 shown in FIG. 10, the flow pattern in the processing chamber 102 is changed from a cross flow configuration as shown in FIG. 10 to an upward flow configuration as shown in FIGS. It will be appreciated by those skilled in the art that allowing a quick and easy change to the downward flow configuration shown will increase the degree of process flexibility. This is accomplished by using an easily installable injector assembly 216 and liner 120 to convert the flow geometry from cross flow to upward flow or downward flow.

  Injectors 116, 216 and liner 120 may be separate components, or the injector may be integrally formed with the liner as a single piece. The latter embodiment is particularly useful in applications where it is desirable to frequently change the processing chamber 102 configuration.

  An exemplary method or process for operating the heat treatment apparatus 100 will be described with reference to FIG. FIG. 18 is a flow diagram illustrating the steps of a method of heat treating a batch of wafers 108 to quickly and uniformly heat each wafer of the batch to a desired temperature. In this method, the base 130 is lowered, and while the base 130 is lowered, the heat shield 142 is moved to a certain position, and the heat from the bottom heating element 112-1 is reflected to the base 130. By returning, the temperature of the base 130 is maintained and the completed wafer 108 is insulated (step 190). Optionally, the shutter 158 is moved into position to seal or isolate the processing chamber 102 (stage 192), power is applied to the heating elements 112-2, 112-3, and preheating of the processing chamber 102 is initiated. Or maintain an intermediate or idle temperature (step 194). The carrier or boat 106 loaded with the new wafer 108 is positioned on the base 130 (step 196). The base 130 is raised to position the boat 106 in the processing area 128, while simultaneously removing the shutter 158 and the thermal shield 142 and actuating the bottom heating element 112-1 to preheat the wafer to an intermediate temperature (stage). 197). The thermal shield 142 is preferably removed immediately before the boat 106 is positioned in the processing area 128. A fluid, such as process gas or vapor, is introduced into one side of the wafer 108 from a plurality of injection ports 180 (step 198). Fluid flows from the injection port 180 across the surface of the wafer 108 to an exhaust port 182 positioned on the liner 120 opposite the wafer relative to the injection port (stage 199). Optionally, while heat treating the wafer, during the heat treatment of a batch of wafers 108s, the mechanical energy is magnetically coupled past the carrier 130 to the carrier or boat 106 to reposition the boat 106. 106 is rotated within the processing zone 128 to further improve the uniformity of the heat treatment (step 200).

  A method or process of a heat treatment apparatus 100 according to another embodiment will now be described below with reference to FIG. FIG. 19 is a flowchart illustrating the steps of an embodiment of a method for heat treating a batch of wafers 108 in a carrier. The method provides an apparatus 100 having a processing chamber 102 of a size and volume that is not substantially larger than required to accommodate a carrier 106 holding a wafer 108 and having no protective heater. To do. The base 130 is lowered, and the boat 106 holding the wafers 108 is positioned on the base 130 (step 202). The base 130 is raised and the boat is loaded into the processing chamber 102, while the wafer 108 is preheated to an intermediate temperature (step 204). Power is supplied to each heating element 112-1, 112-2, 112-3 located near at least one of the top wall 134, side wall 136, and bottom wall 138 of the processing chamber 102 to begin heating the processing chamber. (Step 206). Optionally, the power to at least one of the heating elements is independently adjusted to bring the processing area 128 of the processing chamber 102 into a substantially isothermal environment at a desired temperature (step 208). When heat treating the wafer 108 and while maintaining the desired temperature within the processing area 128, the base 130 is lowered and the thermal shield 142 is moved into place to insulate the finished wafer 108 and provide the bottom heating element 112. The heat from -1 is reflected back to the base 130 to maintain the temperature of the base 130 (step 210). Optionally, the shutter 158 is moved into place to seal or isolate the power applied to the processing chamber 102 and heating elements 112-2, 112-3 and maintain the temperature of the processing chamber (step 212). Next, the boat 106 is removed from the base 130 (step 214) and another boat loaded with a new batch of wafers to be processed is positioned on the base (step 216). The shutter 158 is repositioned or removed (step 218), the thermal shield is retracted or repositioned, the wafer 108 in the boat 106 is preheated to an intermediate temperature, and at the same time the base 130 is raised, The process chamber 102 is loaded and a new batch of wafers is heat treated (step 220).

  It has been determined that the heat treatment apparatus 100 constructed and operated as described above reduces processing or cycle times by about 75% over conventional systems. For example, a conventional high volume batch heat treatment apparatus can process 100 product wafers in approximately 232 minutes, including pre-processing and post-processing times. The heat treatment apparatus 100 of the present invention performs the same processing of 25 product wafers 108 in a mini batch in about 58 minutes.

  With reference to FIGS. 20-32, an injection system according to one embodiment of the present invention will now be described.

Injectors with injection ports or orifices distributed in elongated tubes have been used in both horizontal and vertical furnaces to control the gas concentration across the surface of the substrate. Generally, two or more injectors are used to dispense similar or different gases depending on the particular application. For example, for deposition of P-doped polysilicon, an injector with a distributed injection port was used to introduce PH ₃ gas over the wafer load in the furnace to obtain a uniform gas concentration. Using an injector with a distributed injection port, it is ensured that the properties of the deposited film or film are the same across the wafer load. Conventionally, the injector is fixed, i.e., the direction of the injection port or orifice within the injector is fixed, generally pointing toward the center of the wafer. Even so, the film deposited on the wafer still exhibits undesirable in-wafer uniformity. The uniformity, quality, and reproducibility of the deposited film depends not only on the gas flow rate, concentration, pressure, and temperature, but also on the gas flow pattern and gas distribution. The present invention provides an angularly adjustable injection system to facilitate momentum transfer of “impact mixing” of different gases to improve flow uniformity and thereby improve the quality and uniformity of the deposited film. . In general, the injection system of the present invention includes one or more elongated ports distributed with a plurality of injection ports or orifices for directing reactant and other gas flows across the surface of each substrate. Includes injection tube. The elongated infusion tube is rotatable 360 degrees around the axis.

  FIG. 20 illustrates a heat treatment apparatus 230 that includes an implantation system 250 according to one embodiment of the present invention. For the purpose of briefly describing the present invention, elements that are not closely related to the present invention are not shown and described in the drawings. In general, the apparatus 230 includes a container 234 that houses a processing chamber, and the processing chamber includes a support 238 configured to receive a carrier 240 that holds a batch of wafers 242. The apparatus 230 includes a heat source or furnace 244 for raising the temperature of the wafer 242 to a desired temperature for heat treatment. Cross-flow liner 232 increases the concentration of process gas or vapor near wafer 242 to cause wafers 242 by depositing or causing debris that may form on the inner surface of process chamber 236. Reduce pollution. The liner 232 has a pattern that matches the contour of the wafer carrier 240 and is sized to reduce the gap between the wafer carrier 240 and the liner wall. The liner 232 is attached to the bottom plate 246 and sealed. Cross flow implantation system 250 is disposed between liner 232 and wafer carrier 240. As described below, gas is introduced into one side of the wafer 242 and carrier 240 from a plurality of injection ports or orifices 252 in a laminar flow across the surface of the wafer. A plurality of slots 254 are formed on the opposite side of the liner 232 to exhaust gases or reaction byproducts.

  Cross flow injection system 250 has one or more elongated injection tubes. FIG. 21 illustrates an elongate infusion tube 256 according to one embodiment of the present invention. As shown, the elongate infusion tube 256 is provided with a plurality of infusion ports or orifices 252. In one embodiment, the spacing between the implant ports 252 is positioned at a certain height between two adjacent wafers 242 that each implant port 252 is supported by the wafer carrier 240 when the implant tube 256 is installed, This is the interval at which the gas exiting the injection port 252 flows through a passage formed between adjacent wafers. In another embodiment, the spacing between the injection ports or orifices 252 of the injection tube 256 and the number thereof cooperate with the spacing between the slots 254 and the number of the liner 232, thereby allowing excess gas or reaction byproducts. Are exhausted from the corresponding slots in the liner. The infusion system 250 of the present invention may include one or more elongated infusion tubes 256 as shown in FIG. The elongated injection tube 256 can withstand the thermal and mechanical stresses of high temperature and high vacuum operation and is resistant to corrosion by gases and vapors used or released during processing, any metal, ceramic, quartz Or made of glass material. Preferably, the injection tube is made of opaque, translucent or transparent quartz glass. In one embodiment, the injection tube is made of quartz.

  FIG. 22 is a partial cross-sectional view of the heat treatment apparatus 230 showing the connection between the injection system 250 and the liner 232 and the bottom plate 246. An elongated injection tube 256 is coupled to the inlet 262 of the bottom plate 246 and is sealed to the bottom plate by an O-ring 264. The elongate infusion tube 256 is engaged with the liner 232 via a clamp block 266 as shown in detail in FIG. The clamp block 266 is fixed to the bottom plate 246 using the lock pin 268. Reactants or other gases are introduced into the inlet tube 256 through the inlet 262.

  FIG. 24 is a partial plan view of an upper plate 270 of liner 232 having an opening 272 for receiving one or more elongate infusion tubes 256. As shown, the opening in the top plate 270 is provided with a notch 274 to stabilize the elongated injection tube 256 and direct the injection port 252 of the tube 256 in a particular direction. For illustration purposes, the opening 266 is shown with three notches, but the elongate infusion tube 256 may be adjusted by rotating 360 degrees about the axis, with the infusion port oriented in any direction as needed. It should be noted that any number of notches may be formed so that they can. In one embodiment, the elongated tube 256 has an index pin (not shown) for locking it to one of the notches 274 in the opening 272. In another embodiment, the injection port or orifice 252 in the tube 256 is formed in alignment with the index pin. Thus, when the elongated tube 256 is introduced, the index pin is secured to one of the notches 274 and the injection port 252 of the tube 256 is oriented in the direction indicated by the index pin locked to the notch.

  For example, when the index pin in the elongated tube is locked to the notch 274 </ b> A, the injection port 252 is arranged in a direction facing the inner surface of the liner 232. The gas exiting the injection port 252 impinges on the walls and is mixed before flowing across the surface 242 of each substrate. In another embodiment, the index pin in the elongated tube 256 is locked to the notch 274B. The injection ports 252 in each injection tube 256 are arranged so as to face each other. The gases exiting the injection port 252 collide with each other and are mixed before flowing across the surface 242 of each substrate. In another embodiment, the index pin in the elongated tube 256 is locked to the notch 274C, and the injection port 252 is oriented to face the center of the substrate 242. The number of notches formed in the opening is as high as necessary so that the elongated tube 256 can be rotated 360 degrees and stabilized in the desired position, and thus the injection port 252 can be oriented in the desired direction. can do.

  Advantageously, the injection system of the present invention allows the injection port to rotate completely freely, improving the momentum transfer of gas “impact mixing” that can fluctuate in different steps. . The direction in which the injection port or orifice affecting the gas mixing and flow direction is directed can be adjusted for each treatment without requiring a change in the processing chamber.

  In one embodiment, the injection system of the present invention is used with a cross flow liner having a ledge. U.S. Patent Application No. ________________________________________________ filed at the same time as this application (Attorney Docket No. 33586 / US / 1) further describes cross-flow liners, the disclosure of which is incorporated herein in its entirety It is incorporated by. FIGS. 25-26 illustrate a cross flow liner 276 that can be used with the injection system 250 of the present invention. As shown, the cross-flow liner 276 includes a cylinder 278 having a closed end 280 and an open end 282. The cylinder 278 has a longitudinal ledge 284 that houses the cross flow injection system 250. A plurality of lateral slots 286 provided in the longitudinal direction of the cylinder 278 opposite to the protruding portion 284 exhausts gas and reaction by-products. Cross flow liner 276 has a size and pattern that conforms to the contours of wafer carrier 240 and carrier support 238. In one embodiment, the liner 276 includes a first portion 288 that is sized to fit both wafer carriers 240 and a second portion 290 that is sized to fit the carrier support 238. The diameter of the first portion 288 may be different from the diameter of the second portion 290, i.e., the liner 276 may be "stepped" to fit the wafer carrier 240 and carrier support 238, respectively. it can. In one embodiment, the inner diameter of the first portion 288 of the liner 276 is about 104-110% of the carrier outer diameter. In another embodiment, the inner diameter of the second portion 290 of the liner 276 is about 115-120% of the outer diameter of the carrier support 238. The second portion 290 has one or more thermal shields 264 and is protected from being overheated by a heating element such as an O-ring. Advantageously, the cross flow liner 276 including the longitudinal ledge 284 can be made to conform to the contour of the wafer carrier 240 to reduce the gap between the liner 276 and the wafer carrier 240. This reduces vortices and stagnation in the gap area between the liner inner wall and the wafer carrier, thus improving flow uniformity, which in turn improves the quality, uniformity, and repeatability of the deposited film. It is useful for.

  In one embodiment shown in FIG. 27, two elongate injection tubes 256 are provided on the ledge 284 of the cross-flow liner 276. The elongated tube 256 is rotated and adjusted so that the injection port 252 is oriented to face the inner surface of the liner 276. As shown in FIG. 27, the gas exiting the injection port 252 impinges on the liner wall and is mixed at the ledge 284 before flowing across the surface of each substrate 242. In another embodiment shown in FIG. 28, the two elongate tubes 256 are rotated and adjusted so that the injection ports 252 face each other. As shown in FIG. 28, the gases exiting the injection port 252 collide with each other and are mixed at the ledge 284 before flowing across the surface of each substrate 242. In another embodiment shown in FIG. 29, the two elongate tubes 256 are rotated and adjusted so that the injection port 252 is oriented so that it faces the center of the substrate 242.

  The following examples are provided to further illustrate the present invention and are not intended to limit the scope of the invention in any way.

[Example 1]
This example illustrates the deposition of silicon nitride using dichlorosilane (DCS) and NH ₃ gas. Deposition is performed in a heat treatment apparatus including the implantation system of the present invention. The injection system includes a first injection tube for introducing dichlorosilane (DCS) gas and a second injection tube for introducing NH ₃ gas. Each of the first and second injection tubes has a plurality of ports or orifices for directing a gas flow across the surface of each substrate.

In one variation, the elongate tube is rotated and adjusted so that the injection port is positioned so as to face the inner surface of the liner. Dichlorosilane (DCS) and NH ₃ gas exit the injection port, leave the wafer, and impinge on the inner surface of the liner before flowing across the surface of each substrate.

In another variation, the elongate tube is rotated and adjusted so that the injection port is positioned in a direction facing the center of the substrate. Dichlorosilane (DCS) and NH ₃ gas exit the injection port and flow across the surface of each substrate.

FIG. 30 shows dichlorosilane (DCS) and NH ₃ gas across the surface of the substrate in an injector configuration in which the injection port is oriented to face the center of the substrate and the gas flows radially inward. This is a “computational fluid dynamics (CFD)” demonstration showing a uniform flow of water In this case, the mass difference between dichlorosilane (DCS) and NH ₃ is relatively small (DCS = 101, NH ₃ = 17), and thus the gas velocities are more similar.

[Example 2]
This example illustrates the deposition of silicon nitride using bissilane (BTBAS) and NH ₃ gas. Deposition is performed in a heat treatment apparatus including the implantation system of the present invention. The injection system includes a first injection tube for introducing bissilane (BTBAS) gas and a second injection tube for introducing NH ₃ gas. Each of the first and second injection tubes has a plurality of ports or orifices for directing a gas flow across the surface of each substrate.

In one variation, the elongate tube is rotated and adjusted so that the injection port is positioned so as to face the inner surface of the liner. Bissilane (BTBAS) and NH ₃ gas exit the injection port, leave the wafer, and impinge on the liner walls before flowing across the surface of each substrate.

In another variation, the elongate tube is rotated and adjusted so that the injection ports are positioned so that they face each other. Bissilane (BTBAS) and NH ₃ gas exit the injection port and are mixed before flowing across the surface of each substrate.

FIG. 31 shows computational fluid dynamics (CFD) showing the uniform flow of bissilane (BTBAS) and NH ₃ gas across the surface of the substrate in an injector configuration where the injection ports are oriented facing each other to create a gas merge. ). In this case, the molecular weight of BTBAS is 174 and the molecular weight of NH ₃ is 17. Recoil and mixing of bissilane (BTBAS) and NH ₃ ensures uniform gas velocity as the gas flows across the wafer, and in an exceptional wafer <1.5% (1 sigma) on a 300 mm wafer Provides uniformity.

Example 3
This example illustrates the deposition of aluminum oxide (Al ₂ O ₃ ) using trimethylaluminum (TMA) and ozone (O ₃ ) gas. Deposition is performed in a heat treatment apparatus including the implantation system of the present invention. The injection system includes a first injection tube for introducing trimethylaluminum (TMA) gas and a second injection tube for introducing O ₃ gas. Each of the first injection tube and the second injection tube has a plurality of ports or orifices for directing a gas flow across the surface of each substrate.

In one variation, the elongate tube is rotated and adjusted so that the injection port is positioned so as to face the inner surface of the liner. Trimethylaluminum (TMA) and O ₃ gas exit the implantation port, leave the wafer, and impinge on the liner walls before flowing across the surface of each substrate.

In one variation, the elongate tube is rotated and adjusted so that the injection ports are positioned so that they face each other. Trimethylaluminum (TMA) and O ₃ gas are mixed before exiting the injection port and flowing across the surface of each substrate.

FIG. 32 shows a uniform flow of trimethylaluminum (TMA) and O ₃ gas across the surface of the substrate in an injector configuration where the injection port is positioned facing the liner wall and the gas flows radially outward. Computational fluid dynamics (CFD) demonstration. Recoil and mixing of trimethylaluminum (TMA) and O ₃ ensures a uniform gas velocity as the gas flows across the surface of each wafer.

  The foregoing descriptions of specific embodiments and examples of the present invention have been presented for purposes of illustration and description, and the present invention has been described and illustrated by some of the previous examples. It is not to be construed as limiting. They are not exhaustive and are not intended to limit the invention to the precise form disclosed, and many modifications, improvements, and variations within the scope of the invention are possible in light of the above teachings. It is. The scope of the present invention is intended to be encompassed by the appended claims and their equivalents, including the scope of the claims and their equivalents.

FIG. 6 is a cross-sectional view of a heat treatment apparatus having a base heater for providing an isothermal control volume according to an embodiment of the present invention using a conventional upward flow configuration. 2 is a perspective view of an alternative embodiment of a bottom plate useful in the heat treatment apparatus shown in FIG. It is sectional drawing of a part of heat processing apparatus which has a base heater and heat shield by embodiment of this invention. FIG. 4 is a schematic diagram of the base heater and thermal shield of FIG. 3 according to an embodiment of the present invention. 1 is a schematic view of an embodiment of a thermal shield having an upper layer of highly absorbent material and a lower layer of highly reflective material according to the present invention. FIG. 6 is a schematic view of another embodiment of a thermal shield having a cooling channel according to the present invention. 1 is a perspective view of an embodiment of a thermal shield and actuator according to the present invention. It is sectional drawing of a part of heat processing apparatus which has a shutter by embodiment of this invention. 1 is a cross-sectional view of a processing chamber having a base heater and a magnetically coupled wafer rotation system according to an embodiment of the present invention. 1 is a cross-sectional view of a heat treatment apparatus having a cross flow injector system according to an embodiment of the present invention. 11 is a cross-sectional side view of a portion of the thermal processing apparatus of FIG. 10 showing the position of the injector orifice with respect to the liner and the position of the exhaust slot with respect to the wafer according to an embodiment of the present invention. 10 is a plan view of a portion of the thermal processing apparatus of FIG. 10 taken along line AA of FIG. 10 showing gas flow from the primary and secondary injector orifices across the wafer to the exhaust port according to embodiments of the present invention. It is. 10 is a portion of the thermal processing apparatus of FIG. 10 taken along line AA of FIG. 10 illustrating gas flow from the primary and secondary injector orifices across the wafer to the exhaust port according to another embodiment of the present invention. It is a top view. 10 is a portion of the thermal processing apparatus of FIG. 10 taken along line AA of FIG. 10 illustrating the gas flow from the primary and secondary injector orifices across the wafer to the exhaust port according to yet another embodiment of the present invention. FIG. 10 is a portion of the thermal processing apparatus of FIG. 10 taken along line AA of FIG. 10 illustrating the gas flow from the primary and secondary injector orifices across the wafer to the exhaust port according to yet another embodiment of the present invention. FIG. FIG. 6 is a cross-sectional view of a heat treatment apparatus having an alternative upward flow injector system according to an embodiment of the present invention. FIG. 6 is a cross-sectional view of a heat treatment apparatus having an alternative downward flow injector system according to an embodiment of the present invention. 4 is a flow diagram illustrating an embodiment of a process for heat treating a batch of wafers according to an embodiment of the present invention, whereby each wafer in the batch of wafers is heated quickly and uniformly to a desired temperature. 6 is a flow diagram illustrating another embodiment of a process for heat treating a batch of wafers according to an embodiment of the present invention, whereby each wafer in the batch of wafers is heated quickly and uniformly to a desired temperature. It is sectional drawing of the heat processing apparatus containing the injection | pouring system by one Embodiment of this invention. FIG. 5 shows an elongate tube having a plurality of injection ports according to an embodiment of the present invention. 1 is a partial cross-sectional side view of a heat treatment apparatus showing the connection between an injection system and a cross-flow liner and bottom plate according to one embodiment of the present invention. 1 is a partial cross-sectional top view of a heat treatment apparatus showing the connection of an injection system with a cross-flow liner and a bottom plate according to one embodiment of the present invention. It is a partial top view of the liner upper board which shows the opening which has a notch. 1 is an external view of a cross-flow stepped liner showing a longitudinal ledge portion according to an embodiment of the present invention. FIG. 2 is an external view of a cross-flow stepped liner showing a plurality of exhaust slots of the liner according to one embodiment of the invention. FIG. 1 is a plan view of an injection system having a cross-flow liner including a ledge that illustrates gas flow from an orifice that flows across the wafer and impinges on the liner inner wall before exiting the exhaust slot according to one embodiment of the present invention. 1 is a plan view of an injection system having a cross-flow liner including a ledge that shows gas flow from orifices that flow across a wafer and impinge on each other before exiting an exhaust slot according to an embodiment of the present invention. 1 is a plan view of an implantation system having a cross-flow liner including a ledge that shows gas flow from an orifice that is directed to the center of a wafer and exits an exhaust slot according to one embodiment of the present invention. FIG. 5 is a CFD-like demonstration for a thermal processing apparatus including an implantation system having an implantation port facing the center of the substrate for depositing silicon nitride according to one embodiment of the present invention. FIG. 5 is a CFD-like demonstration for a thermal processing apparatus that includes an implantation system having opposed implantation ports according to an embodiment of the present invention for depositing silicon nitride. FIG. 5 is a CFD-like demonstration for a thermal processing apparatus that includes an injection system having an injection port facing the inner wall of the liner to deposit aluminum oxide according to one embodiment of the present invention.

Claims (19)

A heat treatment apparatus suitable for processing a plurality of substrates supported by a carrier,
A cross flow injection system for directing a flow of reactants and other gases across the surface of each substrate, the cross flow system having one or more elongate tubes, elongate tubes Each of which is rotatable about an axis and has a plurality of injection ports.   The thermal processing apparatus of claim 1, wherein the plurality of injection ports are formed in a line and are distributed longitudinally to the one or more elongated tubes.   The heat treatment apparatus of claim 1, wherein the one or more elongated tubes are rotatable 360 degrees around an axis. A cross flow liner surrounding the carrier;
The heat treatment apparatus according to claim 1, wherein the cross-flow injection system is disposed between the cross-flow liner and the carrier and is capable of rotating 360 degrees.   The one or more elongate tubes are rotated such that the plurality of injection ports are arranged in a direction facing the liner, and the gas exiting the plurality of injection ports is transferred to the surface of each substrate. The heat treatment apparatus according to claim 4, wherein the heat treatment apparatus is made to collide with the liner before traversing.   The one or more elongate tubes are rotated such that the plurality of injection ports are arranged in a direction facing each other, allowing gas exiting the plurality of injection ports to pass before it crosses the substrate; The heat processing apparatus of Claim 4 made to collide with each other.   The thermal processing apparatus of claim 4, wherein the one or more elongated tubes are rotated such that the plurality of injection ports are oriented in a direction facing the center of each substrate.   The cross-flow liner has a cylinder with a closed end and an open end, the cylinder having a longitudinal ledge, and the cross-flow injection system is housed in the ledge. The heat processing apparatus as described in.   9. The thermal processing apparatus of claim 8, wherein the cross flow injection system has one or more elongated tubes housed in the ledge portion.   The heat treatment apparatus according to claim 9, wherein the open end has two openings for receiving the elongated tube.   The heat treatment apparatus according to claim 10, wherein the opening has a notch for directing the injection port in a predetermined direction. An apparatus for heat-treating a plurality of substrates held on a carrier,
A processing chamber defining a processing region for the substrate;
A cross-flow liner surrounding the substrate held by the carrier;
A cross flow injection system disposed between the carrier and the cross flow liner to direct a flow of one or more gases across the surface of each substrate;
The cross flow injection system has one or more elongated tubes, each of which is rotatable about an axis.   The apparatus of claim 12, wherein the processing chamber is sized to process 1-100 substrates.   The cross-flow infusion system includes a first elongate infusion tube and a second elongate infusion tube, each of the infusion tubes formed in a line and longitudinally distributed within the elongate infusion tube. 13. The apparatus of claim 12, wherein each of the elongated infusion tubes is rotatable 360 degrees about an axis.   The cross-flow liner has a cylinder having a closed end and an open end, the cylinder having a longitudinal ledge for receiving the first elongate infusion tube and the second elongate infusion tube. The apparatus according to claim 14.   16. The device of claim 15, wherein the closed end has an opening for receiving the first elongate infusion tube and the second elongate infusion tube.   The opening has a notch, and each injection tube is indexed to be locked to the notch so that the injection ports in the first elongate injection tube and the second elongate injection tube are oriented in a predetermined direction. The apparatus of claim 16, comprising:   The apparatus of claim 12, wherein the cross-flow liner has a pattern and size that is conformal to the carrier and whose inner diameter is approximately 104-110 percent of the diameter of the substrate.   The apparatus of claim 18, wherein the cross-flow liner has a plurality of slots that cooperate with the plurality of injection ports to exhaust gas.

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