TW200531174A - Thermal processing system with cross flow injection system with rotatable injectors - Google Patents

Abstract

An apparatus is provided for thermally processing substrates held in a carrier. The apparatus includes an injection system which provides for selectable injection of gases to the process chamber. The injection system comprises one or more elongated injection tubes having a plurality of injection ports or orifices distributed in the tubes for directing flow of reactant and other gases across the surface of each substrate. The elongated injection tubes are rotatable about an axis in 360 degrees.

Description

200531174 九 IX. Description of the invention The present application claims the benefits and priority of the US provisional patent application No. 60/506, 35.4, filed on September 25, 2003. The disclosure of this case is fully incorporated herein. For reference. PCT / US 0 3/2 1 5 7 5 PCT application related to this case, entitled "Heat Treatment System and Constructable Upright Chamber," which claims U.S. Provisional Patents 60 / 396,536 and 60 / 428,526 The priority of applications and the disclosure of such applications are hereby incorporated by reference in their entirety.

[Technical Field to which the Invention belongs] The present invention relates to a system and method for heat-treating objects such as substrates, and more particularly, to heat-treating, annealing, or depositing multiple layers of material on or from a semiconductor wafer or substrate. A device or method for removing multiple layers of material. [Prior art] In the process of forming a semiconductor substrate or wafer into an integrated circuit or a semiconductor device, a heat treatment device is usually used. Thermal processing of semiconductor wafers includes, for example, thermal processing, annealing, infiltration or incorporation of doped materials, deposition or growth of layers of material, etching or removal of materials from a substrate. These procedures often require heating the wafer to a temperature as high as 1300 t and a temperature as low as 300 c before or during processing; and often need to deliver more than one fluid (such as a processing gas or reactant) to Wafer. Furthermore, these procedures typically require 200531174 (2) to maintain the wafer at a uniform temperature throughout the procedure, despite changes in the temperature of the process gas and its flow rate into the processing chamber. A conventional heat treatment apparatus typically consists of a large valley processing chamber located in or surrounded by a furnace. The substrate to be heat-treated is sealed in the processing chamber, and then the substrate is heated by a furnace to a temperature required to perform the processing. For many procedures (such as chemical evaporation; CVD), the sealed processing chamber must first be evacuated, and once the processing chamber has reached the desired temperature, a reaction gas or processing gas is introduced to form or deposit on the substrate Reactant substance. Previous heat treatment equipment, especially upright heat treatment equipment, typically required heaters located adjacent to the sidewalls of the processing chamber above and below the processing zone where wafer products were processed. This configuration is not ideal because it requires a larger chamber volume, which must be pumped down, filled with processing gas or vapor, and refilled or rinsed, resulting in increased processing time. Furthermore, since it is not easy to inspect the wafers inside the heater, this structure takes up a lot of space and power. Other problems with the conventional heat treatment apparatus include: the temperature of the processing chamber and the temperature of the wafer to be processed will take a long time to rise before processing; and the temperature will take a long time to decrease after processing. Furthermore, to ensure that the processing chamber is stable at the desired uniform temperature before processing can begin, often additional time is required. Although the actual time required to process a wafer may be less than half an hour, the time required for pre-processing and post-processing typically ranges from 1 to 3 hours. Therefore, the time required to rapidly raise or lower the temperature of the processing chamber to a uniform temperature greatly limits the production capacity of the conventional heat treatment apparatus. Before effectively heating or cooling the wafer, it is necessary to heat or cool the conventional heat treatment device, so the fundamentals of the relatively long rise time or fall time-6-200531174 (3) Therefore, the processing room and furnace in the conventional heat treatment device are known Thermal mass. The common method of minimizing or shifting the limits of the throughput of conventional heat treatment equipment has increased the number of wafers that can be processed in a single cycle or operation. Processing a large number of wafers at the same time can help maximize the effective production capacity of the device by reducing the average effective processing time of each wafer. But in the event of an error in the processing procedure, this approach also increases the risk. That is, a single failure can result in the loss or loss of a large number of wafers, such as if a device fails or fails during a single processing cycle. This is especially necessary in the case of larger wafer sizes and more complex integrated circuits, because depending on the processing stage, a single wafer may cost between $ 1,000 and $ 10,000. Another problem with this solution is that increasing the size of the processing chamber to accommodate a larger number of wafers also increases the thermal mass effect of the processing chamber, thereby reducing the rate of heating or cooling the wafer. In addition, the larger processing chambers that process a large group of wafers cause or cause first-in-first-out problems, making the wafers that are loaded first into the processing chamber the last to be removed, and the time that these wafers are exposed to high temperature environments Too long, which reduces the uniformity of the entire wafer. Another problem with the above method is that the system or device used for many processing procedures before or after heat treatment does not have the ability to process a large number of wafers simultaneously. Therefore, when processing a large group or a large number of wafers, although increasing the production capacity of the heat treatment device, it is difficult to improve the overall production capacity of the semiconductor manufacturing equipment. Instead, it can reduce the overall production capacity because it needs to be deposited before the heat treatment device. Wafers, or the accumulation of wafers by other systems and devices downstream of the heat treatment device, become a bottleneck. 200531174 (4) Another embodiment of the above-mentioned conventional thermal processing apparatus is a rapid thermal processing system, which has been developed for rapid thermal processing of wafers. Conventional rapid thermal processing systems ‘Usually high-intensity lamps that selectively heat a single wafer or a small number of wafers in a transparent (usually quartz) small processing chamber. Rapid thermal processing system Eliminates or minimizes thermal mass effects in the processing chamber. And because these lamps have a very low thermal mass, they can quickly heat or cool the wafer by quickly turning the lamps on or off. Unfortunately, the known rapid thermal processing systems have serious drawbacks, including the placement of the lamps. The conventional technique is to place lamps in zones or linings. Each zone or lining is composed of a plurality of lamps adjacent to the side wall of the processing chamber. This configuration is very problematic because it consumes a lot of space and electricity for efficiency and poor viewing factors. These problems are at an additional cost in the latest generation of semiconductor processing equipment. Another problem with conventional rapid thermal processing systems is the inability to achieve uniform temperature distribution across multiple wafers or even one wafer in a group. There are several reasons for the uniform temperature distribution, including (I) poor inspection factors for more than one wafer by more than one lamp, and (Π) changes in output power of the lamp. Furthermore, the failure or change of one lamp will have an adverse effect on the temperature distribution of the entire wafer. For this reason, in most lamp-based systems, the wafer is rotated to ensure that during processing, the temperature unevenness caused by the lamp changes will not be transferred to the wafer. However, the moving parts required for rotating the wafer, especially the rotating feed into the heat treatment chamber, increase the cost and complexity of the system, and reduce the overall reliability of the system. 200531174 (5) Another annoying problem of the rapid thermal processing system is that the outer edge and center of the wafer must maintain a uniform temperature distribution. Most conventional rapid thermal processing systems do not have the proper equipment to deal with this type of temperature unevenness. As a result, a short temperature fluctuation occurs on the entire surface of the wafer, which causes the wafer to slide and shift at high temperatures. Unless a black body pedestal larger than the diameter of the wafer is used, it can be prevented from sliding. There are other disadvantages of the conventional lamp-based rapid heat treatment system, for example, no suitable device can provide uniform power distribution and temperature distribution over a short period of time. This short period of time, such as when the light is turned on or off, generates electrical noise unless phase angle control is used. Because each lamp will have different performance due to its length of use, the repeatability of performance is often the disadvantage of a lamp-based system. Replacing lamps must increase cost and time, especially when one lamp system has more than 180 lamps. Because the peak of the lamp consumes about 250 kilowatts of power, the required power is also expensive. Therefore, there is a need for a device or method that can quickly and uniformly heat a group of substrates during a heat treatment process to bring the entire surface of each substrate in the group of substrates to a desired temperature. SUMMARY OF THE INVENTION The present invention provides solutions to these and other problems, and provides other advantages over conventional techniques. The present invention provides an apparatus and method for isothermally heating a workpiece (such as a semiconductor substrate or wafer) to perform, for example, annealing, infiltration or incorporation of doped materials, deposition or growth of layers of material, etching or removal from a wafer material. 200531174 (6) A heat treatment device for treating a substrate held on a carrier at a high temperature. The device includes a processing chamber and a heating source. The processing chamber has a top wall, a side wall, and a bottom wall. The heating source has a plurality of heating elements approaching the top wall, the side wall, and the bottom wall of the processing chamber to provide an isothermal environment in the processing area. The carrier is placed in the processing area to heat treat the substrate. According to one aspect, the size of the processing chamber is selected so as to cover a volume that is not much larger than the volume required to house the carrier, and the processing area extends approximately through the processing chamber. Preferably, the volume covered by the selected size of the processing chamber is not more than 125% larger than the volume required to accommodate the carrier. Furthermore, the device further comprises a pump system and a washing system, the pump system sucks the processing chamber to a processing pressure, and the washing system returns to the processing chamber after the processing is completed. The size of the processing chamber is selected to provide a processing chamber capable of rapid suction decompression and rapid return. According to another aspect of the present invention, the bottom wall of the processing chamber includes a movable base having at least one heating element therein, and the movable base can be lowered or raised so that a carrier having a wafer can be inserted into the processing chamber. Or removed from the processing chamber. In one embodiment, the device further includes a movable thermal shield that can be inserted into the heating element in the base and the substrate held by the carrier. The heat shield can reflect the heat energy from the heating element inside the base back to the base to shield the substrate on the carrier and isolate it from the heat energy from the heating element inside the base. In a version of this embodiment, the device further includes an isolation plate that can be moved into the upper position of the carrier to isolate the processing chamber when the base is in the lowered position. In the case where the device includes a pumping system to pump down the processing chamber, the isolation plate can seal the processing chamber, thereby enabling the pumping system to pump down the processing chamber when the pump system is in the lowered position. -10- 200531174 (7) In yet another embodiment, the device further includes a magnetic coupling reset system, which can reset the carrier during the heat treatment of the substrate. Preferably, the mechanical energy for resetting the carrier is magnetically attached to the carrier through the base, without using a movable affinity to enter the processing chamber, and does not move the heating element in the base. More preferably, the magnetically coupled reset system is a magnetically coupled rotating system that rotates a carrier in a processing area during thermal processing of a substrate. According to another aspect of the invention, the device further comprises a liner. The liner separates the carrier from the top and side walls of the processing chamber, and a decentralized or cross-injected jet system 'directs the fluid through the surface of each substrate held within the carrier. Cross-flow jetting systems typically include a cross-flow jet with multiple jets that are positioned relative to the substrate held in the carrier 'and the side where the fluid is directed into the substrate . A plurality of discharge ports provided in the inner lining relative to the base material held in the carrier allows the fluid to flow through the surface of the base material. The fluid introduced by the cross-flow jetting system may include a processing gas or vapor, and an inert purge gas or vapor used for cleaning or returning the processing chamber, or an inert purge gas or vapor used for cooling the substrate therein. In another aspect, the apparatus of the present invention includes a spray system that provides a selective gas spray to the processing chamber. The spray system of the present invention typically includes more than one long spray tube having a plurality of spray ports or holes distributed in the tube to guide the reactants and other gases through the surface of each substrate. The long jet tube can be rotated 360 degrees with respect to one axis. In another embodiment, the apparatus of the present invention includes a processing chamber, a cross-flow liner, and a cross-flow injection system. The processing chamber provides a processing area for a plurality of substrates held in the carrier-11-200531174 (8); the cross-flow lining covers the carrier; the cross-flow spray system is provided on the carrier and the cross-flow lining Between 'to direct more than one gas through the surface of each substrate. Cross-flow injection systems include multiple injection ports that can be rotated relative to an axis. [Embodiment] The present invention is directed to a device or method for processing a relatively small number or mini-group (batch) of workpieces. The workpiece, such as a semiconductor building block or wafer, and held in a carrier such as a cassette or a wafer boat can reduce the processing cycle time and improve the uniformity of processing. As used herein, "mini-group" means multiple wafers built in a typical group system, but below hundreds of wafers, and preferably in the range of 1 to about 53 semiconductor wafers. Among them, 1 to 50 are production wafers, and the rest are non-product wafers used for monitoring purposes or as baffles. The workpiece or wafer is heated to a desired temperature by heat treatment ', which temperature is typically in the range of about 350 ° C to 130 ° C. Thermal processing of a semiconductor wafer ' may include, for example, thermal processing, annealing, infiltration or incorporation of doped materials, deposition or growth of multiple layers of materials (such as chemical vapor deposition or CVD), etching or removal of materials from the wafer. A heat treatment apparatus according to an embodiment will now be described with reference to FIG. For the sake of clarity, 'many details that are widely known and familiar to those skilled in the art of heat treatment equipment have been omitted. This detail is described in more detail in, for example, U.S. Patent No. 4,7 7 0,5 90, and this detail is incorporated herein by reference. -12- 200531174 (9) Fig. 1 is a sectional view of a heat treatment apparatus for heat treating one of a group of semiconductor wafers. As shown, the heat treatment apparatus typically includes a container 101 and a heat source or furnace 110. The container 101 covers a volume to form a processing chamber 102 '. The processing chamber is provided with a support base 104 which can accommodate a carrier or a wafer boat. The carrier 106 holds a group of wafers 108. The heat source or furnace 1 10 has several heating source parts 2-1, i i 2 _ 2, 3 (hereinafter collectively referred to as the heating heating element 112), and heat treatment is performed at a temperature raised to the temperature of the wafer. The heat treatment device 100 further includes one or more scientific or electrical temperature sensing elements, such as an impedance temperature device or a thermocouple Ss, which controls the temperature in the heat treatment chamber 102 and / or controls the heating element. The temperature sensing element shown in this embodiment is a contoured thermocouple! 4 has multiple independent temperature sensing nodes or points (not shown) to detect the temperature of multiple locations in the chamber 102. The heat treatment chamber can also include an injector 16 (only one of them is shown) and more than one rinsing port □ 1 1 8 (only one of them is shown). The ejector n 6 directs the fluid (or vapor) into the processing chamber 102 for processing and / or cooling 108; the purge port or port 118 directs the gas to purge the processing chamber and / or wafer 108. Lining] 2 Increase the processing wafer area or processing area 1: The concentration of the processing gas or vapor near the wafer 10 and reduce the pollution caused by the peeling of the sediment on the inner surface of the processing chamber 102 Gas or vapour is discharged through the exhaust port or groove lined with the liner. The container is usually sealed by, for example, a 0-ring 1 2 2 (a closed stage or a substrate 1 2 4 to form a processing chamber 1 02, which completely covers the wafer 1 0 8 between hot spots. Select processing室] 〇2 and the substrate 1 2 4: Realize 'enclose one: while the shape 1 06 inside 112- the desired light to the operation, its processing on or through (air wafer or cold within 8). Dimensions in flat period-13- 200531174 (10), so that the processing chamber can be quickly evacuated, quickly heated, and quickly returned. The size of the container 1 01 and the substrate 1 24 is preferably designed to make the processing chamber 1 02 With a covered volume, it will not be larger than the size required to hold the carrier 106 in which the wafer 108 is held. The sizes of the container 10 and the substrate 1 24 are preferably designed to make the processing chamber The size of 102 is about 125% to 150% of the size required to hold the carrier 108 in which the wafer 108 is held. The size of the container 1 〇1 and the substrate 1 2 4 is more It is better to design the size of the processing chamber 10 to be not more than about 125% of the size required to accommodate the carrier 106 and wafer 108, so as to minimize the volume of the chamber, which helps Less The time required to evacuate and return. Use, for example, O-ring, VCR®, or CF® material to close the opening 1 1 6 of the injector 1 1 6, the thermocouple 1 1 4, and the port 1 1 8 The gas or vapor released or introduced during processing passes through the foreline pipe or discharge port formed in the wall (not shown) of the processing chamber or in the cavity 127 (shown in FIG. 1) of the substrate 124 1 2 6 and pumped out. During the heat treatment, the processing chamber 102 can be maintained at atmospheric pressure or evacuated as low as 5 mTorr (micron mercury) by a pump system. The pump system (not shown) includes more than one Chu Li, blower, high vacuum pump, and Chu valve, throttle valve, foreline pipeline valve. In another embodiment shown in Figure 2, the base plate! 2 4 further includes a generally annular flow channel 1 2 9, The runner 1 2 9 is adapted to receive and support the ejector 1 1 6 ′. The ejector 1 1 6 includes a ring 1 3 1 and several upright injection pipes or nozzles 1 1 6 A extending from the ring 1 3 1. The size and shape of nozzle 1 1 6 A can provide the following upward, downward, or cross-flow flow models. Ring 13] and nozzle 116 The position of A allows gas to be injected into the wafer boat] 〇6 and the container 1 〇1. In addition, the nozzle] 1 6 A is separated from each other along the ring 1 3] -14-200531174 (11) ON to evenly introduce the process gas or vapor into the processing chamber 102, and if desired, the nozzle 1 1 6 A may be used to introduce the purge gas into the processing chamber during the purge or return cycle. The base plate 124 is designed in a short cylindrical shape with an outwardly extending upper flange 1 3 3, a side wall 1 3 5 and an inwardly extending bottom 1 3 7. The upper flange 133 is adapted to receive and support the container 101, and includes an O-ring 12 to seal the container to the upper flange. The bottom 1 3 7 is outside the ring 131 of the support ejector 1 16 and is suitable for receiving and supporting the lining 120. In addition, the substrate 1 24 shown in FIG. 3 9, 1 4 3. Cooling ports 1 4 5, 1 4 7 for providing cooling fluid circulation in the substrate 1 2 4 and pressure monitoring ports 1 4 9 for monitoring the pressure in the processing chamber. The process gas inlets 1 5 1 and 1 6 1 introduce a gas from a supply source (not shown) into the injector 116. The scrubbing / purging gas inlets 139, 143 are provided on the side walls 1 3 5 of the substrate 1 24, and are mainly used to introduce the gas from the purging gas supply source into the port I 1 8. Install a mass flow controller (not shown) or any other suitable flow controller on the pipeline between the gas supply source and the opening I 3 9, 1, 4 3, 1 5 1, 16] to control the gas flow into the process In container 02, container 101 and lining 120 may be resistant to high temperature and high vacuum operation by thermal and mechanical stress, and any metal, ceramic, crystal, or glass that is resistant to the corrosion of gases and vapors used or released during processing Made of materials. The container 1 010 and the inner lining 12 are preferably made of opaque, translucent, or transparent opaque, translucent, or transparent materials having a thickness sufficient to withstand mechanical stress and preventing the deposition of by-products generated by the process (thus reducing potential pollution of the processing environment). Made of quartz glass -15- 200531174 (12). The container 101 and the liner 120 are more preferably made of quartz that reduces or eliminates heat transfer from the area of the processing wafer 108 or the processing area 128 outward. Through the loading gate or loading port (not shown), the entire batch of wafers 108 is introduced into the heat treatment device, and then enters the processing through the hatch or opening in the processing chamber or the substrate 124 capable of forming a gas tight seal.室 102。 Inside the room 102. In the configuration shown in FIG. 1, the processing chamber 1 02 is an upright reaction furnace, and the movable base 1 30 is raised during processing, and is sealed with a seal on the substrate 24 (for example, an O-ring). The hatch is closed; the operator or an automatic processing system (not shown), such as a wafer boat processing unit, can position the carrier or wafer boat 106 on the support base 104 attached to the base when the base is lowered. . The heating element 1 1 2 includes a top 1 3 4 (element 1 1 2-3), a side portion 1 3 6 (element 1 1 2-2), and a bottom 1 3 8 (element Η 2) positioned on the processing chamber 1 〇2. -1) nearby components. The heating element 2 preferably surrounds the wafer to obtain a good viewing factor, and thereby provides an isothermally controlled volume or processing area 128 in the processing chamber to process the wafer 108 therein. The heating element approaching the bottom of the processing chamber 10 2 1 8 can be placed in the base] 30. If desired ', a heating element can be added to or on the substrate 1 2 4 to supplement the heat of the heating element 1 1 2-1. In the embodiment shown in FIG. 1, the heating element 112-1 near the bottom of the processing chamber is preferably housed in a movable base 130. The base 13 is made of a thermally and electrically insulating material, or an insulating block 1 40 in which an electric resistance heating element 1 1 2-1 is embedded or attached thereto. The base 1 3 0 further includes more than one feedback sensor or thermocouple 1 4 1 to control the heating element 1 I 2-]. In the construction shown, the thermocouple 1 4 1 is embedded in the center of the insulating block] 4 0 -200531174 (13). The side heating element 1 12-2 and the top heating element 1 12-3 may be provided in or on the insulating block 110 near the container 101. The side heating element 112-2 and the top heating element 112-3 are preferably accommodated in the insulating block 110. The heating element 1 12 and the insulating block 1 1 0, 1 4 0 can be designed into any shape structure, and can be any Way and made of any material. In order to obtain the desired processing temperature up to 1 1 50 ° C, the heating element 1 1 2-1 near the bottom 1 3 8 of the processing chamber 10 02 preferably has a heating power of from about 0.1: [kW to about 10 kW Maximum power output, and a maximum processing temperature of at least 1 150 ° C. Even better, these bottom heating elements 1 12-1 have a maximum power output of at least about 3.8 kW, and a maximum processing temperature of at least 95 ° C. In the embodiment, the side heating element 1 1 2-2 is functionally divided into several regions, including a lower region and an upper region closest to the base 130, each of which can be independent of the top heating element 1 1 2- 3 and the bottom heating element 1 1 2 -1, and work with mutually different power levels and load cycles. The heating element 1 1 2 is controlled by any suitable means, including control techniques using conventional techniques. Because the heating element and the insulating block are housed in the inverted quartz vortex 丨 4 2, the pollution from the insulating block 140 and the bottom heating element 2-1 is reduced even if it is not completely eliminated. The crucible 1 42 serves as an obstacle between the heating element block and the processing chamber]. The crucible 42 is also sealed from the environment of the loading connection 璋 and the wafer processing unit to further reduce or eliminate pollution of the processing environment. Crucible] The interior of 4 2 is usually at standard atmospheric pressure, -17- 200531174 (14) So the strength of the entire crucible 1 4 2 should be sufficient to withstand the processing chamber! The pressure difference between the base 1 and 3 is like 1 atmosphere. When the wafer 108 is loaded or unloaded, that is, when the base is lower β (Figure 3), the bottom heating element 1 1 2-1 is still energized to maintain a low no-load temperature for the g processing temperature. For example, for a processing program where the bottom heating element has a desired temperature of 95 ° C, the no-load temperature is 50 ° -150 ° C. For some processing procedures (for example, a processing procedure having a higher desired processing temperature and / or a higher heating rate), the no-load temperature can be set to be higher, so as to have a thermal cycling effect on the bottom heating element 1 1 2-1 Extend component life. In order to further reduce the pretreatment time (that is, the time required to prepare 100 for thermal processing) during the push or load (that is, when the carrier 130 has a boat 106 wafer 108 on it on the base 130) The heating element 1 1 2-1 can be heated to a desired processing temperature or a lower temperature. However, in order to thermally stress the components of the wafer 108 and the heat treatment device 1000, it is preferable to make the bottom heating element 1 12-1 and the heating element 1 1 2 located in the processing chamber 1 02 1 3 4 -3 and heating element 1 3 6 on the side] 'simultaneously reach the desired processing temperature. Therefore, for some processing programs, such as those requiring higher processing temperatures, the base is lifted after the last wafer in a group of wafers has been loaded. Before the base starts to lift, the bottom heating element 11 2- 1 begins. Similarly, it should be understood that after processing, and during the pull or unload cycle, that is, when the base is lowered] 2 8), the supply can be reduced or completely removed at 02 and: 时时: 所In order to reduce the lifespan of a certain bureau, the bottom is, the minimum top is 12-2 m in batches, and the heating room (bottom -18- 200531174 (15) heating element 1 1 2 -1 power to Begin to lower the base temperature to the no-load temperature, prepare to cool the wafer 108, and unload it by the boat handling unit. In order to help cool the base 130 to the pull temperature before pulling or unloading cycle, pass-through insulation is provided Pipe for supplying air or inert purge gas (such as nitrogen) to block 140. Nitrogen is preferably ejected from the channel 1 4 4 through the center of the insulating block 140, and can be on the top of the insulating block 140 and the crucible 1 4 2 flows between and around the interior Then, high-efficiency air filters (not shown) or discharge equipment (not shown) are used to discharge hot nitrogen to the outside environment. The central spray structure design can cool the center of the wafer 108 more quickly. And it is very suitable to minimize the center / edge temperature difference of the bottom wafer, which will be damaged due to the shift of the lattice structure. As mentioned above, in order to increase or extend the life of the bottom heating element 1 1 2-1, The no-load temperature can be set higher and closer to the desired processing temperature to reduce the thermal cycling effect. In addition, it is also desirable to bake the heating element 1 1 2-1 periodically in an oxygen-rich environment to Promote the formation of a protective oxide surface layer. For example, when the resistance heating element is formed of an aluminum alloy (such as Kanthan®), bake the heating element in an oxygen-rich environment 1 1 2-1 to Promote the growth of alumina surface. Therefore, the insulating block 140 may further include an oxygen pipe (not shown) to promote the formation of a protective oxide surface layer during the baking of the heating element 1 2-1. In one embodiment, During the treatment, the decontamination line for cooling nitrogen is supplied with oxygen for baking through a three-way valve. FIG. 3 is a partial cross-sectional view of the heat treatment device 10. FIG. 3 shows the heat treatment device] 0 0 during loading or unloading of crystals When the circle is 1 0, that is, when the base 1 3 0 -19- 200531174 (16) is in a lower position. In this operation mode, the heat treatment device includes a heat shield 146, which can be Base 130 and wafer boat] Rotate or slide into position between the lower wafer 108 in 06. In order to improve the performance of the thermal mask ι46, the thermal mask is usually provided on the side facing the heat treatment element 1 1 2-1 Reflective and absorptive on the side facing the wafer. The purpose of the thermal shield 1 4 6 includes increasing the cooling rate of the wafer 108 in the wafer boat 106 and helping to maintain the no-load temperature of the base 130 and the bottom heating element 1 1 2 -1 to reduce The time for the processing chamber to warm up to the desired processing temperature. An embodiment of the heat treatment apparatus having a heat shield will be described in more detail with reference to Figs. 3 to 6. FIG. 3 also shows a heat treatment apparatus 100 having a base heating element 112-1 and a heat shield 146. In the illustrated embodiment, the thermal mask I 4 6 is attached to the rotation shaft 150 by an arm 148. The rotating shaft 1 50 is rotated by an electric, pneumatic, or hydraulic actuator to rotate the thermal shield 1 46 into the heated base 1 3 0 and the wafer boat 1 06 during the pull or unload cycle. A first position between the lowermost wafers 108; and during at least a final or final stage of the push or load cycle (just before the bottom of the wafer boat 106 enters the processing chamber 102), The thermal mask 146 is removed or rotated to a second position that is not between the base and the wafer. The rotating shaft 1 50 is preferably assembled or attached to a mechanism (not shown) for raising or lowering the base 130, so that when the processing chamber 1 is already managed on the top of the base, the The thermal mask 146 is rotated and positioned. Keeping the heat shield 146 in position during loading 'more quickly heats the heating elements 1 1 2-1 to the desired temperature than in the case where no heat shield 1 4 6 is positioned. Similarly, during unloading, the mask 1 4 6 helps to cool the wafer by reflecting the radiation from the heating element 1 1 2-1 of the base, especially -20- 200531174 (17) not only cooling those closer to the base Wafer. The rotating shaft 150 in another embodiment can be installed or attached to another part of the heat treatment device 100, and is suitable for axial movement at the same time as the base 130, or only when the base is completely lowered, the heat shield 146 rotation positioning. Figure 1 does not show the base heating element 112-1 and thermal mask 146 'of Figure 3, which shows that the heat energy or heat radiation from the bottom heating element is reflected back to the base 1 3 0' and absorbed from the batch or stacked crystals Thermal energy or radiation from the lower wafer in the circle. Using a variety of different materials (such as metal, ceramic, glass, or polymer coatings; individually or in combination), the desired characteristics, high reflectance, and high absorbance can be obtained. The table below shows, by way of example, the various suitable materials and corresponding parameters.

According to an embodiment, the thermal mask may be made of a material such as silicon carbide, opaque quartz, or I. One of them is "Kui μ Zhonggang", if the side is thrown, the other side is Scratching, scratching, or roughening a surface of a thermal coating can greatly change its heat transmission -21-1, especially its reflectivity 200531174 (18) In another embodiment The cooked mask M6 can be made of two different layers. FIG. 5 is a legendary illustration of a heat shield M6, which has an upper layer 1 5 2 of a local absorptive material such as silicon carbide or opaque stone, and a lower layer of a local reflectance material such as polished stainless steel or polished inscription] 5 4 . Although shown to have an almost equal thickness, it should be understood that either the upper layer 152 or the lower layer 154 may have a larger thickness, depending on the specific needs of the thermal mask, for example, to make the thermal expansion coefficient between two layers The thermal stress caused by the differences is minimized. For example, in some embodiments, the lower layer 54 may be a very thin polished metal layer or film deposited, formed, or plated on a quartz plate constituting the upper layer 152. Such materials may be integrally formed, interlocked, or combined together, for example, by conventional means of attachment or fixation. In another embodiment, the thermal shield 1 4 6 further includes an internal cooling channel 1 56 to further isolate the wafer 108 from the bottom heating element 1 1 2-1. In a version of this embodiment, as shown in FIG. 6, cooling channels 1 56 are formed between two different material layers] 5 2 and 1 5 4. For example, cooling channels 1 5 6 can be formed in the opaque quartz layer 1 5 2 of high absorptivity by a fabrication method or any other suitable technique, and a metal layer 1 5 4 or a coating of, for example, a titanium or aluminum coating. cover. The cooling channels 1 5 6 may be formed in the metal layer 154, or both in the metal layer and the quartz layer 152. Fig. 7 is a perspective view of one embodiment of a thermal mask assembly 153, which includes a thermal mask 146, an arm 148, a rotating shaft 1500, and an actuator 155. As shown in FIG. 8, the heat treatment device 100 further includes an isolation plate 158, which can be rotated, slid, or otherwise moved above the wafer boat 106 to be positioned so as to be fully lowered at the base. When in position, the heat treatment chamber] 0 2 -22- 200531174 (19) is isolated from the outside or loading port environment. For example, when the base 130 is lower, the partition plate 15 8 slides into a position above the carrier 106 and rises to process the chamber 102. In another embodiment, the isolation plate 158 can also rotate or swing into the vehicle when 130 is in a lower position! 〇 6 Above, and then rise to isolate the processing chamber 102. The isolation plate 158 can be selected to rotate around the thread or relative to the column to simultaneously lift the isolation plate, and isolate the processing chamber 102 when it swings into a position above the carrier 106. For a processing chamber 1 02 (such as a system) that operates normally under vacuum, the isolation plate 15 8 can form a vacuum tightness to the substrate 1 24 so that the processing chamber 10 2 can be depressurized to processing by suction. Pressure or vacuum. It may be desirable to pump the processing chamber 102 between batches of wafers to reduce pressure, or to eliminate potential factors that pollute the processing environment. It is preferable to form a vacuum seal with a large diameter (for example, an O-ring), so the isolation plate 158 can have a plurality of water flow channels 1600 to cool the seal. In the embodiment shown in FIG. 8, the same O-ring 132 as that used to seal the crucible 142 is used to seal the partition plate when the base 130 is raised. As far as the processing device 130, which has a processing chamber 102 operating normally under atmospheric pressure, the isolation plate 158 is only an insulating plug designed to reduce heat loss at the bottom of the place. An embodiment to achieve this purpose uses an opaque quartz plate, which may further include (or it may not include multiple cooling runners below or inside it. When the base 30 is in a fully lowered position, it is isolated Board] 5 8 positions below the processing chamber 102, and then isolate the processing chamber by more than one electrical, hydraulic, pneumatic brake (not shown), and lift. Actuator: Position isolation base The CVD seal, such as reducing the seal, is located in a thermal treatment room so that the pressure is at the entrance, preferably -23- 200531174 (20) is usually about 15 to 60 pounds per square inch (ps IG). Obtained on a heat treatment device to operate a version of the air pressure example, the isolation plate 1 58 may include a plate swing arm to attach multiple wheels to both sides of the plate body. The isolation plate 1 5 8 is rolled into the processing chamber 1 from two parallel guide rails on the guide rail, and then the swing arm is pivoted to move the isolation direction to seal the processing chamber 102. As shown in FIG. 9, the heat treatment device 100 has a turn-around system 1 62 which rotates the wafer 108 during the processing procedure, and rotates the wafer 108 with the wafer supported on the wafer boat 106. By averaging the non-uniformity of the heating element, the uniformity within the wafer is improved, and the temperature and object response profile are improved. Wafer Rotation System 0.1 to about 10 rpm to rotate the wafer 1 0 8 Wafer Rotation System 1 62 includes a drive assembly with a rotary motor or air motor) or spin-on to prevent chemical attack Container (such as an annealed special magnet 1 6 8. The insulation is located at the base 1 3 0] and the drive shaft 1 72 connected to the insulation block, and another magnet 1 above the insulation block inside the top of the base moves. The shaft 1 72 and the second magnet 1 74 are also enclosed in the anti-composition. The magnet 1 74 on the 130 side of the base, the steel ring or the support embedded / attached to the processing chamber 1 0 2 via the base] 3 0 and magnetically coupled to the air of the rotating machine, this air passes through the valve. For example, in this implementation, and through the short arm or in operation, the plate or the lower position, the stop plate 1 5 8 enters upward, including A magnetically assisted wafer spin support 104 and wafer boat [0. During the processing procedure 1 12 and the process gas flow to create a uniform wafer 162 can usually be processed by about 0 [motor 1 6 6 (such as electric rotation Mechanism 1 6 4, and fluorinated or stainless steel) The steel ring under I 1 4 0 transmits rotational energy at 7 4. Steel ring 1 7 〇 、 The containerization of chemical erosion resistance is magnetically coupled with the seat through the crucible 142. The structure] 6 4 can eliminate -24- 200531174 (21) eliminate the work and 7 4 recognize the boat)) Sensitivity is set by the flow □ split rotation mechanism is set in the processing environment or the need for a mechanical cooker to remove potential sources of leakage or pollution. Furthermore, by setting the rotating mechanism 164 on the surface and at a distance from the processing environment, the temperature exposed to the rotating mechanism 164 can be minimized, thereby increasing the reliability and service life of the wafer rotating system 162. In addition to the above, the wafer rotation system 1 6 2 may further include more than one sensor (not shown) to ensure an appropriate wafer boat 106 position, a steel ring or magnet 1 102 in the processing chamber 10 2 Proper magnetic coupling with magnet 1 in base 130. A sensor that determines the relative position of the wafer boat 06 or a sensor that determines the position of the wafer boat is particularly useful. In one embodiment, the sensor for confirming the crystal position includes a sensor protrusion (not shown) on the wafer boat 106 (not shown), and an optical or laser sensor located below the substrate 1 24. During operation When the wafer 108 has been processed and the base 130 is lowered 3 inches below the substrate 124, the wafer rotation system 1 62 starts to rotate until the convex part of the wafer boat can be seen. Then, the wafer rotation system 1 62 is operated to align the wafer Boat to unload wafer 108. At this point, the wafer boat will descend to the loading / unloading height. After the initial inspection, the wafer boat position can only be confirmed from the mark sensor. As shown in Figure 10, the heat treatment device 1 00 preferably uses a modified injector 2 1 6 which is a distributed or cross (X) flow injector 2 1 6-1. Via wafer 1 08 and wafer boat 06 The ejector opening or hole] 80, introduces the processing gas or vapor, and passes through the surface of the wafer in a laminar flow, and then discharges from the processing chamber pipe 1 2 0 or the tank 1 2 on the opposite side. Design cross-flow ejectors in earlier up- or down-flow configurations 6-] by providing improved process gas or steam -25- 200531174 (22) cloth, improving the uniformity of each wafer in a batch of wafers 108. In addition, the cross-flow ejector 2 1 6-1 may have other purposes, including spraying cooling gas (such as Helium, nitrogen, hydrogen) to force convection cooling between wafers 108. Compared to earlier upward or downward structural designs, the use of cross-flow ejectors 2 1 6-1 resulted in wafers 1 0 to 8 are more uniform, regardless of the wafer located at the bottom or top or middle of the stack or batch. The holes of the ejector 2 1 6 are preferably designed so that their size, shape, and location can provide Spray mode to provide forced convection cooling between wafers 108, so that there is no large temperature gradient caused across the wafer. Figure 11 is a partial cross-sectional side view of the heat treatment device 100 of Figure 10, which Shows the relationship between part of the injector hole 180 and the processing chamber lining 120, and the relationship between the discharge tank 1 82 and the wafer 108. Figure 12 shows the A of the heat treatment device 100 according to Figure 10- Partial plan view of line A, showing an embodiment of the laminar gas flow, from the holes 1 8 0-1 of the first ejector 1 84 and the second The holes 1 8 0-2 of the injector 1 8 6 pass through one of the illustrated wafers 108 to the discharge grooves 1 8 2-1 and] 8 2-1. It should be noted that the discharge grooves shown in FIG. 10] The position of 2 has been moved from the positions of the discharge grooves 182-1 and 182-1 shown in FIG. 12 so that the discharge groove and the ejector 116-1 can be displayed in a single cross-sectional view of the heat treatment device. It should also be noted The dimensions to the ejector 1 8 4, 1 8 6 and the discharge tank 1 8 2-1, 1 8 2 · 1 have been exaggerated to make it more clear compared to the wafer 108 and processing chamber liner 1 2 0. An example is the gas flow from the ejector to the discharge tank. Figure I 2 also shows that the processing gas or vapor is initially directed away from the wafer 10 s, and towards the inner lining] 20 to promote the mixing of the processing gas or vapor before it reaches the crystal -26- 200531174 (23) circle. The construction of the holes 180-1, 180-2 is particularly useful when the first and second injectors 184, 186 are introduced with different reactants to, for example, form a multi-component film or layer. FIG. 13 is another—partial plan view taken along line A-A of the heat treatment device 100 of FIG. 10, showing holes 18 from the first and second ejectors 18, 4, 18, and 18, respectively, through an exemplary crystal. One of the circles 108 is another embodiment of the gas flow path to the discharge tank 182. FIG. 14 is another partial plan view taken along the line AA of the heat treatment apparatus 100 of FIG. 10, which shows the holes 1 8 0 from the first and second ejectors 1 8 4 and 18 6 through the illustrated wafer 1 0 8 One of them is another embodiment of the gas flow path to the discharge tank 182. FIG. 15 is another partial plan view taken along line A-A of FIG. 10 heat treatment device 100, which shows holes 18 from the first and second injectors 18 4, 4 and 18, and is exemplified. One of the circles 108 is another embodiment of the gas flow path to the discharge tank 182. Figure] 6 is a heat treatment device with two or more upwardly flowing injectors 1 1 6-1 and 1 1 6-2 in another embodiment! 〇 〇 sectional view. In this embodiment, 'the processing ejector 1 1 6-1, 1 1 6-2 with individual outlet holes located below the processing chamber 10 02, the processing gas and vapor flow upwards and pass through the wafer] 08' and then use The passing exhaust gas is discharged from the discharge groove 1 8 2 at the top of the lining 120. The upward-flowing ejector system is also shown in FIG. 1. Fig. 17 is a cross-sectional view of a heat treatment apparatus 100 having a downward flow ejector system in another embodiment. In this embodiment, a processing ejector having individual holes located in the processing chamber] 0 2]] 6-1,]] 6-2 whose processing gas-27-200531174 (24) the body and vapor flow downward, After passing through the wafer 108, the used exhaust gas is discharged from the discharge groove 18 2 at the lower end of the lining 120. The injectors 116, 216, and / or the lining 120 may have different injection points and other injectors and linings that discharge processing gas from the processing zone 128, and are quickly and easily replaced or replaced. Those skilled in the art will understand that the cross-flow ejector 2 16 embodiment shown in FIG. 10 can quickly change the flow pattern in the processing chamber 102 from the cross-flow model shown in FIG. And it is easily changed into an upward flow model as shown in FIG. 1 or FIG. 16 or changed into a downward flow model as shown in FIG. 17, so the degree of freedom in processing elasticity is increased. This can be accomplished by using an easily assembled injector assembly 2 16 and a lining 12 20 to convert the flow geometry from cross flow to upward flow or downward flow. The injectors 116, 2 16 and the lining 120 may be separate components, or the injector and the lining may be integrally formed as a single component. The latter embodiment is particularly useful where it is desired to frequently change the flow pattern of the processing chamber 102. An exemplary method or process for operating the heat treatment apparatus 100 will be described with reference to FIG. 18. Figure 8 is a flowchart of the steps of a method for thermally processing a batch of wafers 10 §, in which each wafer in the batch of wafers is quickly and uniformly heated to a desired temperature. In this method, the base 130 is lowered, and when the base 130 is lowered, the heat shield 142 is moved into position to reflect the heat from the bottom heating element 1 1 2-1 back to the base to maintain the temperature of the base and isolate The processed wafer 108 (step 190). Optionally, move the isolation plate 1 5 8 to position ' to seal or isolate the processing chamber! 02 (step) 92). Apply electricity to the heating element]] 2-2, 1] 2-3 to preheat the processing chamber] 0 2K-28-200531174 (25) Start preheating to or maintain the intermediate or no-load temperature (step 1 9 4). The carrier or wafer boat 106 on which the new wafer 108 is loaded is positioned on the base 130 (step 196). While removing the isolation plate 158, the heat shield 142, and warming the bottom heating element 1] 2-1 to preheat the wafer to an intermediate temperature, the base 130 is lifted to position the wafer boat in the processing area 128 (Step 197). Preferably, the thermal shield 1 42 is removed just before the wafer boat 106 is positioned in the processing area 1 2 8; a fluid such as a processing gas or vapor is introduced into the wafer through a plurality of injection ports 1 8 0 1 〇8 side (step 198). The fluid flows from the ejection port 180 through the surface of the wafer 108 to the discharge port 1 8 2 on the other side of the wafer opposite to the ejection port and provided in the inner liner 120 (step 199). Optionally, during the heat treatment of the entire batch of wafers 108, the wafer boat 106 can be rotated in the processing area '] 28 to further improve the uniformity of the heat treatment; during the heat treatment of the wafers, magnetically coupled The mechanical energy is transmitted to the carrier or wafer boat 106 through the base 130, and the wafer boat is reset (step 200). The method or process of the heat treatment apparatus 100 according to another embodiment will be described with reference to the drawings. Figure 19 is a flow chart of the steps of a method for thermally processing a batch of wafers in a carrier. In this method, the device 100 is provided with a processing chamber]. 〇2, the size and volume of the processing chamber will not be greater than the capacity required to accommodate a carrier 106 having wafers 108 therein (unprotected heating) Size). The base 130 is lowered, and the wafer boat j 6 holding the wafer 108 held therein is positioned on the base (step 202). While preheating the wafer] to the intermediate temperature, the pedestal 130 is lifted to insert the wafer boat into the processing chamber 102 (step 204). Power is applied to the heating elements 1 12-1, 1] 2-2, 1 12-3, and each heating element is located near the top wall of the processing chamber 1 0 2] 3 4, side wall I 3 6, and > 29- 200531174 (26) and at least one of the bottom wall 1 3 8 to start heating the processing chamber (step 206). Optionally, the power applied to at least one of the heating elements is independently adjusted to provide the processing zone 1 2 8 in the processing chamber 102 at a substantially isothermal environment at a desired temperature (step 208). When the wafer I 08 has been heat-treated, and when the processing area 1 28 maintains the desired temperature, lower the pedestal 130, and move the thermal mask 1 42 into position to isolate the processed wafer 108, and The heat from the bottom heating element 1 1 2-1 is reflected back to the base 1 3 0 to maintain the temperature of the base (step 2 1 0). It is also optional to move the isolation plate into position to seal or isolate the processing chamber 102 and apply power to the heating elements 1 12-2, 1 1 2-3 to maintain the temperature of the processing chamber (step 2 1 2) . The boat 106 is then removed from the base 130 (step 214). Position another wafer boat with a new batch of wafers to be processed on the base (step 2 1 6). Reset or remove the isolation plate 1 5 8 (step 2 1 8). Retreat or reset the thermal mask to preheat the wafer 108 in the wafer 106 to the intermediate temperature while lifting the base 130 for the wafer boat to be inserted into the processing chamber 102 for heat treatment of a new batch of wafers (Step 2 2 0). The heat treatment apparatus 100 provided and operated as described above reduces processing or cycle time by about 75% compared to conventional systems. For example, it is known that a large batch of thermal processing equipment may process 100 finished wafers in about 232 minutes (including pre-processing and post-processing time). The heat treatment device 100 of the present invention performs the same processing on a small batch of 25 finished wafers in about 58 minutes. Referring to FIGS. 20-32, a spray system according to an embodiment of the present invention will be described. An ejector having spray ports or holes distributed in a long tube has been used in a level -30-200531174 (27) and an upright furnace to control Gas concentration over the entire surface of the substrate. Typically, depending on the specific application, 'use more than two injectors to distribute similar or different gases', for example, 'in order to deposit P-doped polycrystalline silicon, injectors with dispersed injection ports have been used' to introduce PH3 gas crystals The entire wafer load inside the furnace provides a uniform gas concentration. Use an ejector with a dispersion jet to ensure that the properties of the deposited film are the same throughout the wafer load. Traditionally, the ejector is fixed ', i.e., the direction of the ejection port or hole of the ejector is fixed, and the direction is typically toward the center of the wafer. Even so, the film deposited on the wafer still exhibits undesirable intra-wafer uniformity. The uniformity, quality, and repeatability of the deposited film depend not only on the gas flow rate, concentration, pressure, and temperature, but also on the gas flow model and gas distribution. The spray system provided by the invention can adjust the angle to improve the impact mixing momentum transmission of different gases, thereby improving the flow uniformity and the quality and uniformity of the deposited film. The spraying system of the present invention usually includes more than one long spraying tube. The long spraying tubes have a plurality of spraying ports or holes distributed in the tube to guide the reagent and other gases through the surface of each substrate. The long jet tube can rotate 360 degrees with respect to one axis.

FIG. 20 shows a heat treatment apparatus 230 according to an embodiment of the present invention, which includes a spray system 250. In order to simplify the description of the present invention, elements not closely related to the present invention are not shown in the drawings and the description. The device 2 30 generally includes a container 234 containing a processing chamber 236 having a support seat 2 3 8 adapted to receive a carrier 240 containing a batch of wafers 242 therein. The device 230 includes a heat source or furnace 244 to heat the wafer 2 4 2 to a desired heat treatment temperature. Cross-flow lining 2 3 2 is used to increase the concentration of processing gas or vapor near the wafer 2G -31-200531174 (28), and to reduce the deposits formed on the inner surface of the processing chamber 2 3 6 Pollution. The shape of the lining 2 3 2 is designed to fit the outer contour of the wafer carrier 240, and its size is designed to reduce the gap between the wafer carrier 240 and the lining wall. The inner liner 2 3 2 is mounted on the substrate 2 4 6 and sealed. A cross-flow spray system 2 50 is provided between the inner liner 2 3 2 and the wafer carrier 240. The gas is introduced through a plurality of injection ports or holes 2 5 2 on the wafer 242 and the carrier 240 side, and passes through the surface of the wafer in a laminar flow as described below. The lining 23 2 on the opposite side forms a plurality of grooves 2 5 4 to discharge gas or reaction by-products. The cross-flow injection system 250 includes more than one long injection tube, and FIG. 21 shows a long injection tube 2 56 according to an embodiment of the present invention. As shown in the figure, the long spray tube 2 5 6 is provided with a plurality of spray ports or holes 2 5 2. In one embodiment, the distance between each injection port 2 5 2 is such that after the injection tube is assembled, the height of each injection port 2 5 2 is between two adjacent wafers 242 supported by the wafer carrier 240. Therefore, the gas ejected from the injection port 2 5 2 will flow through the path formed by the two adjacent wafers. In another embodiment, the interval and number of each injection port or hole 2 5 2 of the injection pipe 2 5 6 are matched with the interval and number of each groove 2 5 4 of the lining, so excess gas and reaction by-products from the inside The corresponding groove of the liner is discharged. The injection system 250 of the present invention may include more than one long injection pipe 256 as shown in FIG. 21. The long jet tube 256 may be made of any metal, ceramic, crystal, or glass material that can withstand the thermal and mechanical stresses of local vacuum operation and is resistant to the gases and vapors used or released during processing. The spray tube is preferably made of opaque, translucent, or transparent quartz glass. In one embodiment, the spray tube is made of quartz. -32-200531174 (29) Figure 22 is a partial cross-sectional view of the heat treatment device 230, which shows the connection of the spray system 250 with a lining 2 32 and the substrate 24 6. The long injection pipe 256 is coupled to the injection inlet 262 in the substrate 246, and is sealed to the substrate through an O-ring 2 64. As shown in Fig. 23, the long injection pipe 2 5 6 engages the inner lining 2 3 2 by the holding block 2 6 6. The small 2 6 8 locks the clamping block 2 6 6 to the base plate 246. The reactant or other gas is introduced into the injection pipe 256 through the inlet 262. Fig. 24 is a partial plan view of a top plate 270 of the lining 232. The top plate 270 has a plurality of openings 272 for receiving more than one injection pipe 256. As shown in the figure, the opening 272 of the top plate 2 70 is provided with a plurality of depressions 2 74 to stabilize the long spray pipe 256 and direct the spray port 252 of the hall 256 in a specific direction. The three recesses 274 AC shown in each opening 272 are for illustration only. It should be understood that any number of recesses can be provided so that the long jet tube can be rotated and adjusted 360 degrees with respect to one axis, and the jet port 2 5 8 can In any direction you want. In one embodiment, the long tube 25 6 includes a graduated pin (not shown) for locking the long tube 2 5 6 to the plurality of recesses 2 7 4 of the opening 2 7 2. In another embodiment, the spray port or hole 2 5 2 of the tube 2 5 6 is aligned with the scale pin. Therefore, after the long tube 2 5 6 is assembled, the scale pin is locked in one of the recesses 2 7 4, and the spray port 2 5 2 in the tube 2 5 6 is oriented in the direction indicated by the scale pin locked in the recess. For example, when the scale pin in the long pipe 2 5 6 is locked in the recess 2 74A, the injection port 2 5 2 faces the inner surface facing the inner lining 2 3 2. The gas ejected from the injection port 2 5 2 hits the inner lining wall and is mixed before flowing through the surface of each substrate 242. In another embodiment, when the scale pin in the long tube 2 5 6 is locked in the recess 2 7 4 B, the spray ports 2 5 2 of each spray tube 2 5 6 face each other. Spray 200531174 (30) Jets 2 5 2 The jets of gas hit each other and are mixed before flowing through the surface of each substrate 2 4 2. In another embodiment, the scale pin in the long tube 2 5 6 is locked in the recess 2 7 4 C, so the spray port 2 5 2 faces the center of the substrate 2 4 2. The number of depressions formed in the opening can be as many as desired, so the long tube 256 can be rotated 360 degrees and stabilized at the desired position, so the spray port 2 5 2 can be oriented to the desired direction. The injection system of the present invention enables the injection port to have a sufficient degree of rotational freedom to enhance the momentum transmission of the impact mixing of the gas, which may be changed in different methods. The orientation of the injection ports or holes that affect the gas mixing and flow direction can be adjusted on a run-to-run basis without modifying the processing chamber. '' In one embodiment, the present invention is used in conjunction with a cross-flow liner having a protruding section. U.S. Patent Application No. _ (Agent No. 3 3 5 8 6 / US / 1) filed with the present invention describes a cross-flow lining, the disclosure of which is fully incorporated herein by reference. Figures 2-5 -26 show the cross-flow lining 27.6, which can be used in conjunction with the spray system 250 of the present invention. As shown, the cross-flow liner 2 7 6 includes a cylinder 2 7 8 having a closed end 2 80 and an open end 2 8 2. The cylinder 2 7 8 is provided with a longitudinally protruding section 2 8 4 to accommodate the cross-flow injection system 2 50. On the opposite side of the protruding section 284, the cylinder 2 7 8 is provided with a plurality of longitudinal grooves 2 8 6 arranged in a longitudinal direction to discharge gas and reaction by-products. The size and shape of the cross-flow lining 2 7 6 is designed to match the contours of the wafer carrier 240 and the carrier support seat 2 38. In one embodiment, the inner liner 2 7 6 includes a first segment 2 88 that is sized to fit the wafer carrier 2 4 0 and a second segment 2 9 0 that is sized to fit the carrier support 2 3 8. The first section 2 8 8 and the second section 34- 200531174 (31) The diameter of the second section 2 9 0 can be different, that is, the inner lining 2 7 6 can be stepped to fit the wafer carrier 240 and the carrier support 2 respectively. 3 8. In an embodiment, the first section 2 8 8 of the inner liner 2 7 6 has an inner diameter of about 104% to 110% of the outer diameter of the carrier. In another embodiment, the second segment 290 of the inner liner 276 has an inner diameter of about 15% to 120% of the outer diameter of the carrier support seat 2 3 8. The second section 290 may be provided with more than one thermal shield 264 to protect, for example, the seal of the o-ring from being overheated by the heating element. The cross-flow liner 276 with the longitudinally protruding section 284 can be manufactured according to the outline of the wafer carrier 240 to reduce the gap between the liner 2 76 and the wafer carrier 240. This helps reduce vortices and stagnation in the area of the gap between the inner wall of the liner and the wafer carrier, and therefore improves the flow uniformity, which can all improve the quality, uniformity and repeatability of the deposited film. In an embodiment shown in FIG. 27, two long injection pipes 2 5 6 are assembled in the protruding section 2 8 4 of the cross-flow lining 2 7 6. Rotate and adjust the long tube 2 5 6 so that the spray port 2 5 2 faces the inner surface of the inner liner 2 7 6. As shown in FIG. 27, the gas ejected from the injection port 2 5 2 hits the inner lining wall and is mixed in the protruding section 2 8 4 before flowing through the surface of each substrate 2 4 2. In another embodiment shown in Fig. 28, the two long tubes 25 6 are rotated and adjusted so that the injection ports 252 face each other. As shown in Fig. 28, the gases ejected from the ejection ports 2 5 2 collide with each other and are mixed in the protruding section 284 before flowing through the surface of each substrate 242. In still another embodiment shown in Fig. 29, the two long tubes 2 5 6 are rotated and adjusted so that the spray port 2 5 2 faces the center of the substrate 2 4 2. The following examples are provided to further illustrate the invention and are not intended to limit the scope of the invention in any way. -35- 200531174 (32) Example 1 This example illustrates a silicon nitride deposition using dichlorosilane (D C S) and ammonia gas, and the deposition is performed in a heat treatment apparatus including a spray system of the present invention. The injection system includes a first injection pipe for introducing dichlorosilane gas, and a second injection pipe for introducing gas. Each first and second spray tube is provided with a plurality of ports or holes to direct the gas flow through the surface of each substrate

In one variation, the long tube is rotated and adjusted so that the jet port faces the inner surface of the liner. The dichlorosilane and ammonia gas sprayed from the spray port are separated from the wafer and hit the inner surface of the liner before flowing through the surface of each substrate. In another variation, the long tube is rotated and adjusted so that the spray port faces the center of the substrate. Dichlorosilane and ammonia gas sprayed from the spray port flow through the surface of each substrate.

Fig. 30 is an example of computational fluid dynamics, which shows a uniform flow of dichlorosilane and ammonia gas within the structure of the ejector, passing through the surface of the substrate. The ejection port of the ejector faces the center of the substrate, creating a radially inward gas flow. In this case, the mass difference between dichlorosilane and ammonia is small (D C S di 101, NH3 = 17), so the gas velocities are similar. Example 2 This example illustrates a silicon nitride deposition using di-tert-butylaminosilane (BTBAS; bis t r t b u t y] a m i η s i 1 a n e) and ammonia gas, which is performed in a heat treatment apparatus including a spray system of the present invention. This injection system -36- 200531174 (33) includes a first injection pipe for introducing di-tert-butylaminosilane gas, and a second injection pipe for introducing ammonia gas. Each of the first and second spray pipes is provided with a plurality of ports or holes to direct a gas flow through the surface of each substrate. In one variation, the long tube is rotated and adjusted so that the jet port faces the inner surface of the liner. Di-tert-butylaminosilane and ammonia gas sprayed from the spray port are far away from the wafer and hit the inner surface of the liner before flowing through the surface of each substrate. In another variation, the long tube is rotated and adjusted so that the spray port faces the center of the substrate. Di-tert-butylaminosilane and ammonia gas sprayed from the spray port are impinged and mixed before flowing through the surface of each substrate. Figure 31 is an illustrative illustration of computational fluid dynamics, which shows a uniform flow of t-butylaminosarane and ammonia gas across the surface of the substrate within the injector structure. The ejector orifices face each other, creating a convergent gas flow. In this case, di-tert-butylaminosilane has a molecular weight of 1 74 and an ammonia molecular weight of 17. Rewinding and mixing of di-tert-butylaminosilane and ammonia ensures a uniform gas velocity as the gas flows through the wafer, and results in 'extra less than 1.5% (1 sigma) of 300 mm wafers In-wafer uniformity. Example 3 This example does not use aluminum oxide (A1 203) deposition of trimethy (TMA; trimethy 1 a 1 uminum) and ozone (〇3), and the deposition is performed in a heat treatment apparatus including a spray system of the present invention . The injection system includes a first injection pipe for introducing trimethylaluminum gas, and a second injection pipe for introducing ozone gas. Each of the first and second jets is provided with multiple ports or-37- 200531174 (34) holes to direct the gas flow through the surface of each substrate. In one variation, the long tube is rotated and adjusted so that the jet port faces the inner surface of the liner. The trimethylaluminum and ozone gas ejected from the ejection port were separated from the wafer and hit the liner wall before flowing through the surface of each substrate. In another variation, the long tube is rotated and adjusted so that the jets face each other. The trimethylaluminum and ozone gas ejected from the ejection port are impinged and mixed before flowing through the surface of each substrate. Figure 32 is an illustrative illustration of computational fluid dynamics, which shows a uniform flow of trimethylamine and ozone gas in the structure of the ejector, passing through the surface of the substrate. The ejector's spray port faces the lining wall, creating a radially outward gas flow. The rewinding and mixing of dimethyl aluminum and ozone ensures a uniform gas velocity as the gas flows across the surface of each wafer. The above description of specific embodiments and examples of the present invention has been presented for the purpose of illustration and not for the purpose of illustration ', and although the present invention has been described and illustrated with previous examples, it cannot be construed as being limited thereto. The above examples are not intended to exhaust or limit the invention to the precise mode disclosed, and based on the above teachings, many modifications, improvements, and changes can be made within the scope of the invention. The scope of the present invention is intended to cover the superordinate domains disclosed herein by the scope of the attached patent application and its equivalents. [Brief description of the drawings] After reading the above detailed description, in conjunction with the accompanying drawings and the scope of patents attached below, it will be easier to understand these and various other features and advantages of the present invention. -38- 200531174 (35) Fig. 1 is a cross-sectional view of an embodiment of a heat treatment device with a base heater according to the present invention, which provides an isothermal control volume and uses a conventional upward flow structure design; Fig. 2 is applicable to Fig. 1 is a perspective view of an embodiment of a substrate in a heat treatment apparatus shown in Fig. 1; Fig. 3 is a partial sectional view of a heat treatment apparatus according to an embodiment of the present invention, which has a base heater and a heat shield; Fig. 4 is an implementation of the present invention An example of a base heater and a heat shield shown in FIG. 3 in the example; FIG. 5 is an illustration of an embodiment of the heat shield of the present invention, which includes an upper layer material with high absorption and a lower layer material with high reflection Figure 6 is an illustration of an embodiment of a thermal shield of the present invention, which has a cooling channel; Figure 7 is a perspective view of an embodiment of a thermal shield and an actuator of the present invention; Figure 8 is a heat treatment device of the present invention A partial cross-sectional view of an embodiment having an isolation plate; FIG. 9 is a cross-sectional view of an embodiment of the processing chamber of the present invention, which has a base heater and a magnetically coupled wafer rotation system; FIG. A cross-sectional view of an embodiment having a cross-flow spraying system; FIG. 11 is a partial side cross-sectional view of one embodiment of the heat treatment device shown in FIG. The position of the groove relative to the wafer; Figure 12 is a partial plan view of the heat treatment apparatus of the present invention taken along the line AA of the present invention-39- 200531174 (36) embodiment showing the first ejector and the second ejector The gas flow ejected from the hole passes through the wafer to the discharge port. FIG. 13 is a partial plan view of another embodiment of the heat treatment device of the present invention along the line AA of FIG. 10, showing the flow from the first ejector and the second ejector. The gas flow ejected from the hole passes through the wafer to the discharge port; FIG. 14 is a partial plan view of another embodiment of the heat treatment device of the present invention along the line A-A of FIG. 10, showing from the first ejector and the second ejector The gas flow ejected from the hole passes through the wafer to the discharge port. FIG. 15 is a partial plan view of still another embodiment of the heat treatment device according to the line AA of FIG. 10 according to the present invention, showing from the first ejector and the second ejector. A gas stream ejected from the hole through the wafer The discharge port is an embodiment of the present invention; FIG. 16 is a cross-sectional view of one embodiment of the heat treatment apparatus of the present invention, with another upward flow spray system; FIG. 17 is a cross-sectional view of an embodiment of the heat treatment apparatus of the present invention, having Another downward flow spray system; FIG. 18 is a flowchart of an embodiment of a method for thermally treating a batch of wafers according to the present invention, thereby rapidly and uniformly heating each wafer in the batch to FIG. 19 is a flowchart of another embodiment of a method for heat treating a batch of wafers according to the present invention, thereby quickly and uniformly heating each wafer in the batch to a desired temperature Figure 20 is a cross-sectional view of an embodiment of a heat treatment apparatus of the present invention, which has a spray system; -40- 200531174 (37) Figure 21 is an embodiment of a long pipe of the present invention, which has multiple spray ports Figure 22 is A partial cross-sectional side view of an embodiment of the heat treatment device of the present invention, showing the connection of the spray system with a cross-flow lining and a substrate; FIG. 23 is a partial cross-sectional top view of an embodiment of the heat treatment device of the present invention, Shows the connection of the spray system with the cross-flow lining and the substrate; FIG. 24 is a partial plan view of the ceiling of the indoor lining showing a recessed opening; FIG. 25 is an external view of one embodiment of the cross-flow stepped lining of the present invention , Which shows a longitudinally protruding section; FIG. 26 is an external view of an embodiment of the cross-flow stepped lining of the present invention, showing a plurality of discharge grooves in the lining; FIG. A plan view of an embodiment of a cross-flow liner injection system, showing the gas flow ejected from the hole, before passing through the wafer and discharged from the discharge slot, hitting the inner wall of the liner; FIG. A plan view of an embodiment of an injection system lined with cross-flow segments, showing the gas flows ejected from the holes impacting each other before flowing through the wafer and being discharged from the discharge slot; A plan view of an embodiment of a flow-lined spray system showing a gas flow ejected from a hole toward the center of a wafer and discharged from a discharge tank; FIG. 30 is a calculation of one embodiment of the heat treatment apparatus of the present invention An example of body dynamics, the heat treatment device includes a spray system with a spray port facing the center of the substrate for depositing silicon nitride; -41-200531174 (38) Figure 31 is a calculation of an embodiment of the heat treatment device of the present invention An illustration of fluid dynamics, the heat treatment apparatus includes a spray system with mutually facing ejection ports for depositing silicon nitride; and FIG. 32 is an illustration of computational fluid dynamics of an embodiment of the heat treatment apparatus of the present invention. The heat treatment apparatus includes a spray system having a spray port facing the inner wall of the lining for depositing alumina.

[Description of main component symbols]

100 Heat treatment device 10 1 Container 1 02 Processing chamber 104 Support base 106 Carrier (crystal boat) 1 08 Wafer 1 1 0 Heat source (furnace) 1 1 2 ~ 1 1 2-3 Heating element 114 Thermocouple 116 Ejector 116 Eject 1 1 6 A Spray pipe 118 Port 120 Lining 1 20 Treatment chamber lining 1 2 1 Drain port (slot) -42- 200531174 (39) 122 〇ring 124 Base plate 126 Foreline pipe (drain port) 127 Empty Cavity 128 area (processing area) 129 runner 13 0 base 13 1 ring 13 3 upper flange 134 top 13 5 side wall 13 6 side 13 7 bottom 13 8 bottom 139, 143 loop / wash gas inlet 1 40 insulation block 14 1 Thermocouple 142 Crucible 144 Channel 145, 147 Cooling port 146 Thermal shield 148 Arm 149 Pressure monitoring port 1 50 Rotary shaft

-43- 200531174 (40) 151, 161 Process gas inlet 1 52 Upper layer 153 Thermal mask assembly 1 54 Lower layer 155 Actuator 156 Cooling channel 15 8 Isolation plate 162 Wafer rotation system 1 64 Rotating mechanism 166 Rotating motor 168 Magnet 170 Steel ring 1 72 Drive shaft 174 Magnet 176 Magnet 180-2 Hole 180-1 Hole 180 Hole 182-2 Slot 182-1 Slot 1 82 Drain (slot) 1 84 First injector 1 86 Second injector 2 16-1 Cross Flow Ejector

-44-200531174 (41) 23 0 Heat treatment device 232 Cross-flow lining 234 Container 23 6 Processing chamber 23 8 Support seat 240 Carrier 242 Wafer 244 Furnace 246 Substrate 250 Cross-flow spray system 252 Spray port or hole 254 (transverse) Groove 256 Long injection pipe 262 Injection inlet 264 O-ring 266 Clamping block 268 Lock pin 270 Top plate 272 Opening 274A ~ 274C Depression 276 Cross-flow lining 278 Cylinder 280 Closed end 2 82 Open end

-45 200531174 (42) 284 protruding section 28 8 first section 290 second section

-46-

Claims (1)

200531174 (1) X. Patent application scope 1. A device suitable for heat-treating a plurality of substrates supported in a carrier, the device comprising a cross for guiding reactants and other gases to flow through the surface of each substrate A stream injection system, the cross-flow injection system includes one or more long tubes, each of which can rotate relative to an axis, and each long tube is provided with a plurality of injection ports. 2. The device according to item 1 of the scope of patent application, wherein the plurality of injection ports are formed in a straight line and longitudinally distributed in the one or more long tubes. 3. The device according to item 1 of the patent application scope, wherein the one or more long tubes can be rotated 360 degrees with respect to one axis. 4. The device according to item 1 of the scope of patent application, further comprising a cross-flow lining covering the vehicle, wherein the cross-flow injection system is provided between the lining and the vehicle, and the cross-flow The jet system can be rotated 360 degrees. 5. The device according to item 4 of the scope of the patent application, wherein the one or more long tubes are rotated so that the jets face toward the lining, so that the gas flowing out of the jets passes through each Before hitting the surface of the substrate, the liner is bumped. 6. The device according to item 4 of the scope of patent application, wherein the one or more long tubes are rotated so that the ejection ports face each other, so that the gas flowing out of the ejection ports before passing through the substrate, Hit each other first. 7-The device according to item 4 of the scope of patent application, wherein the one or more long tubes are rotated so that the jets face the center facing each substrate. 8. The device according to item 4 of the scope of patent application, wherein the cross-flow lining comprises a cylinder having a closed end and an open end, the cylinder is provided with -Λ (-200531174 (2) a longitudinal protruding section ' And the cross-flow injection system is housed in the protruding section. 9-The device according to item 8 of the patent application scope, wherein the cross-flow injection system comprises one or more long tubes housed in the protruding section. 1 0. The device according to item 9 of the scope of patent application, wherein the open end is provided with two openings to accommodate the long pipes. 1 1 · The device according to item 10 of the scope of patent application, wherein the The opening is provided with a plurality of recesses so that the spray ports face a predetermined direction. 12 · —A device for heat-treating a plurality of substrates held in a carrier, the device comprising: a processing chamber provided to the And other substrates, a processing area; a cross-flow liner, which covers and holds the substrates in the carrier; and a cross-flow spray system, which is provided between the carrier and the cross-flow liner, To direct one or more gases through the table of each substrate The cross-flow injection system includes one or more long tubes, each of which can rotate relative to an axis, and each long tube is provided with a plurality of injection ports. 1 3 · As described in item 12 of the scope of patent application The device, wherein the size of the processing chamber is designed to process 1 to 100 substrates. 14. The device according to item 12 of the patent application scope, wherein the cross-flow spraying system includes a first long pipe and A second long tube, each of which is provided with a plurality of spray ports formed in a line and longitudinally distributed in the tube, wherein each of the long spray tubes can be rotated 360 degrees with respect to an axis. 1 5. If applied The device according to item 14 of the patent scope, wherein the cross-flow lining includes a cylinder having a closed end and an open end. The cylinder set-48- 200531174 (3) a longitudinal protruding section to accommodate the first The first and second long injection pipes. 16. The device according to item 15 of the scope of patent application, wherein the closed end is provided with an opening to accommodate the first and second long injection pipes. Device according to item 16 of the patent, wherein the openings are provided with a plurality of depressions And each spraying pipe is provided with a scale pin locked in a recess, so that the spraying ports in the first and second long spraying pipes face a predetermined direction. The device according to item 2, wherein the shape and size of the cross-flow lining can be adapted to the carrier, and the inner diameter of the cross-flow lining is about 104% to 1 1 of the diameter of the substrates. 0%. 19. The device according to item 18 of the scope of patent application, wherein the cross-flow lining is provided with a plurality of grooves, and the grooves cooperate with a plurality of ejection ports for exhausting gas. -49-