1243407 政、發明說明： 【發明所屬之技術領域】 本發明係關於對液晶顯示 用玻璃基版、印刷基版、半 刻液，將基板表面所形成之 板的触刻處理方法及触刻處 【先前技術】 對基板之表面供給蝕刻液 處理之方法有：將基板保持 平面内於垂直軸旋轉方向予 板表面吐出I虫刻液，以對基 數之搬送滾筒支樓基板並向 送路徑之上方所配置之複數 刻液，以對基板進行蝕刻處 刻液，經由處理槽内部所配 在浸潰於蝕刻液中之狀態下 板進行蝕刻處理之方法等。 但是，於基板上形成金屬 屬配線上形成絕緣膜時之絕 屬配線之剖面形成梯形之方 中，係藉由將基板浸潰於I虫 蝕刻處理。亦即，係於處理 設置有用以將其處理槽内之 處理裝置，一邊經由泵從匯 裝置用玻璃基板、電漿顯示器 導體晶圓等基板之表面供給蝕 金屬被膜以指定圖案蝕刻之基 理裝置。 ，將基板一片一片地予以姓刻 於旋轉盤上，一邊將基板在水 以旋轉，一邊由喷霧喷嘴向基 板進行蝕刻處理之方法；以複 水平方向搬送’同時由基板搬 的噴霧噴嘴向基板表面噴出蝕 理之方法；於處理槽内貯存蝕 置排列之複數的滾筒，將基板 於水平方向來回移動，以對基 配線圖案之情況，在提高於金 緣特性之目的下，被要求以金 式進行I虫刻。因此，習知技術 刻液中之方法，來將基板予以 槽内部配設複數個滾筒，使用 I虫刻液適當地回收之匯入槽的 入槽向處理槽循環供給蝕刻 312/發明說明書(補件)/93-08/93〗15595 5 1243407 液，一邊在將基板浸潰於處理槽内所貯存之蝕刻液中之狀 態下，經由搬送滚筒使基板於水平方向來回移動，以進行 基板浸潰處理。（例如，參照日本平成7年專利申請公告第 1 9 7 6 7號公報。） 【發明内容】 (發明所欲解決之問題） 然而，近年來，基板有大型化之傾向，而有如下問題： 例如，關於液晶顯示裝置用玻璃基板，演變至使用一邊之 長度達2公尺的大型基板。於基板浸潰處理裝置方面，為 了因應此種基板之大型化，處理槽亦有大型化之必要，而 隨著此處理槽之大型化，蝕刻液之使用量明顯增加，又， 將蝕刻液從匯入槽向處理槽循環供給之泵也必須為大容量 者。此外，亦有提高處理槽的強度之必要，且於事業所内， 因為貯藏·保管屬危險物品之蝕刻液的量增加，其管理亦 成麻煩。 又，對於基板進行浸潰處理之習知方法中，利用蝕刻液 將金屬被膜的一部分溶解時，會發生液中所產生之氫的細 微氣泡不向液面方向上浮，附著在基板表面且直接殘留之 現象。此氣泡若殘留在基板表面，則該部分由於金屬被膜 及蚀刻液之接觸受氣泡阻擋，導致金屬無法溶解。此結果 係如圖1 1之部分擴大剖面圖所示般，有基板表面1之金屬 配線圖案2之間，金屬膜4以粒狀或膜狀形式殘存之問題。 圖1 1中之元件符號3為光阻膜。 又，在液晶顯示裝置或電漿顯示器等之製造過程中，如 6 312/發明說明書(補件)/93-08/93115595 1243407 圖1 2 - 1所示，係於玻璃基板6之表面，將2種類以上之金 屬或合金之層合膜，例如紹（或銘合金）之第1金屬層7與 鉬、鉻等之第2金屬層8所組成之金屬被膜以指定圖案進 行蝕刻。於此情況中，將基板浸潰處理之習知方法係如同 圖1 2 - 2所示，在蝕刻後之金屬被膜之第2金屬層8 c中， 在第1金屬層7 c上會殘存屋簷狀之不必要部份。此原因被 認為因為金屬被膜係由2種類的金屬層合膜所形成，在基 板浸潰處理之過程中，一方之金屬鉬或鉻鈍態化 (passivation)，使第2金屬層8之I虫刻反應於途中停止。 如圖12-2所示，若第1金屬層7c上之第2金屬層8c處形 成屋簷狀之不必要部份，接下來即使欲於金屬被膜上形成 絕緣膜，絕緣膜與金屬被膜間仍會生成空隙，而有發生製 品不良的問題。圖1 2 - 1及圖1 2 - 2中的元件符號9為光阻 膜。 本發明係有鑑於如上述情事而完成者，其目的在於提供 一種無須為了對應基板之大型化而將處理槽隨之大型化， 且於如浸潰處理之情況亦不產生蝕刻不良之基板之蝕刻處 理方法，及提供可適於實施該方法之蝕刻處理裝置。 (解決問題之手段） 申請專利範圍第1項之發明之特徵為，於供給蝕刻液至 基板表面，並將於基板表面所形成之金屬被膜蝕刻為指定 圖案之基板的蝕刻處理方法中，具有：第1步驟，向基板表 面噴出蝕刻液，主要將金屬被膜於膜厚方向予以蝕刻；以 及第2步驟，於經由該第1步驟蝕刻後，供給蝕刻液至基 312/發明說明書(補件)/93-08/93115595 7 1243407 板表面，使基板之表面整體裝滿蝕刻液，主要將金屬被膜 於沿著膜面之方向予以蝕刻。 申請專利範圍第2項之發明之特徵為，於申請專利範圍 第1項所記載之蝕刻處理方法中，於上述第2步驟中，將 表面整體裝滿蝕刻液之基板以互相平行配置排列之多個搬 送滾筒支持並移動，並將前述搬送滾筒加溫至與裝滿於基 板上之蝕刻液相同之溫度。 申請專利範圍第3項之發明之特徵為，於供給蝕刻液至 基板表面，並將於基板表面所形成之金屬被膜蝕刻為指定 圖案之基板的蝕刻處理方法中，具有：第1步驟，向基板表 面噴出蝕刻液，主要將金屬被膜於膜厚方向予以蝕刻；以 及第2步驟，於經由該第1步驟蝕刻後，供給蝕刻液至被 支持為傾斜姿勢之基板表面之傾斜方向之上方側之邊端 部，使蝕刻液於基板表面上自上方側邊端部流下至向下方 側邊端部，主要將金屬被膜於沿著膜面之方向予以蝕刻。 申請專利範圍第4項之發明之特徵，係於申請專利範圍 第1至3項中任一項所記載之蝕刻處理方法中，基板為玻 璃基板，於該玻璃基板表面所形成之金屬被膜為2種類以 上之金屬或合金之層合膜，前述第1步驟中所使用之蚀刻 液與前述第2步驟中所使用之蝕刻液為同一組成之藥液。 申請專利範圍第5項之發明之特徵為，於供給蝕刻液至 基板表面，並將於基板表面所形成之金屬被膜蝕刻為指定 圖案之基板的蝕刻處理方法中，具有第1處理槽；配設於 該第1處理槽内，支持並搬送基板之基板搬送手段；配設 8 312/發明說明書(補件)/93-08/93115595 1243407 於該基板搬送手段之基板搬送路徑上方，向著經由基板搬 送手段所搬送之基板表面噴出蝕刻液之噴霧噴嘴；連結設 置於前述第1處理槽之第2處理槽；配設於該第2處理槽 内，並支持基板的基板支持手段；以及供給蝕刻液給自前 述第1處理槽内搬出並搬入前述第2處理槽内之由前述基 板支持手段所支持之基板表面，且使基板表面整體裝滿蝕 刻液之吐出喷嘴。 申請專利範圍第6項之發明之特徵，係於申請專利範圍 第5項所記載之蝕刻處理裝置中，前述基板搬送手段係由 互相平行配置排列之多個搬送滾筒所構成，並具備將前述 搬送滾筒加溫至與裝滿於基板上之蝕刻液相同溫度的滾筒 加溫手段。 申請專利範圍第7項之發明之特徵，係於供給蝕刻液至 基板表面，並將於基板表面所形成之金屬被膜蝕刻為指定 圖案之基板的蝕刻處理方法中，具有：第1處理槽；配設於 該第1處理槽内，支持且搬送基板之基板搬送手段；配設 於該基板搬送手段之基板搬送路徑上方’向者經由基板搬 送手段所搬送之基板表面噴出蝕刻液之噴霧喷嘴；連結設 置於前述第1處理槽之第2處理槽；配設於該第2處理槽 内，使基板傾斜並支持之基板傾斜支持手段；以及供給蝕 刻液給自前述第1處理槽内搬出並搬入前述第2處理槽内 之由前述基板傾斜支持手段支持為傾斜姿勢之基板表面之 傾斜方向上方側之邊端部，使蝕刻液從基板表面上之上方 側邊端部流下至下方側邊端部之吐出喷嘴。 9 312/發明說明書(補件)/93-08/93115595 1243407 申請專利範圍第8項之發明之特徵，係於申請專利 第5至7項中任一項所記載之蝕刻處理裝置中，基板 璃基板，該玻璃基板表面所形成之金屬被膜為2種類 之金屬或合金之層合膜，從前述喷霧噴嘴向基板表面 之蝕刻液及從前述吐出喷嘴向基板表面供給之蝕刻液 一組成之藥液。 根據申請專利範圍第1項之發明的基板蝕刻處理方 於第1步驟中，藉由向基板表面喷出之蝕刻液，主要 屬被膜於膜厚方向被蝕刻。亦即，如圖9 ( a )之部分擴 面圖所不’因触刻液5向基板表面1 π貫出’使得基板 1上所形成之金屬被膜2 a之蝕刻速度，相較於沿著膜 向，變得較膜厚方向快。因此，金屬被膜2a主要於膜 向被蝕刻，且腐蝕至其底面為止，使基板表面1露出 後，於第2步驟中，藉由使基板表面整體裝滿蝕刻液 進行浸潰處理時同樣地，金屬被膜係主要於沿膜面之 被蝕刻。其結果，如同圖9 ( b )之部分擴大剖面圖所示 屬被膜2 b被蝕刻而變成剖面為梯形。另外，於此處理 中，即使基板大型化，也不會有如浸潰處理般需要大 理槽之情況。又，於此處理方法中，於經由第1步驟 屬被膜蝕刻至其底面為止並使基板表面露出後、或蝕 接近底面處為止後，經由第2步驟，係對金屬被膜沿 面方向蝕刻，故於第2步驟中，即使發生氫的氣泡也 特別成為問題，無須擔心在基板表面之金屬配線圖案 有金屬膜以粒狀或膜狀形式殘存。 312/發明說明書(補件)/93-08/93115595 範圍 為玻 以上 噴出 為同 法， 使金 大剖 表面 面方 厚方 〇此 ，與 方向 ，金 方法 型處 使金 刻至 其膜 不會 之間 10 1243407 又，如申請專利範圍第4項之發明的蝕刻處理方法中， 在基板為玻璃基板，且該玻璃基板表面所形成之金屬被膜 為2種類以上之金屬或合金之層合膜之情況，亦即如圖 1 0 ( a )之部分擴大剖面圖所示，對在玻璃基板6之表面有2 種類以上之金屬或合金之層合膜，例如鋁（或鋁合金）之第 1金屬層7與鉬、鉻等第2金屬層8所組成之金屬被膜進 行蝕刻之情況，根據申請專利範圍第1項之發明的蝕刻處 理方法，則如上所述，藉由第1步驟使第1金屬層7及第 2金屬層 8主要於膜厚方向蝕刻，並如圖1 0 ( b )之部分擴大 剖面圖所示，使玻璃基板6之表面露出或進行蝕刻至與其 近似之狀態為止後，藉由第2步驟使第1金屬層7a及第2 金屬層8 a於沿膜面之方向被蝕刻，因此，不會發生對基板 進行浸潰處理時般之於第1金屬層上之第2金屬層形成屋 簷狀之不必要部份（參照圖1 2 - 2 )之狀況，而係如圖1 0 ( c ) 之部分擴大剖面圖所示，第1金屬層7b及第2金屬層8b 均被良好地蝕刻，使得由第1金屬層7 b及第2金屬層8 b 所形成之金屬被膜的剖面（成為金屬配線等之部分的剖面） 依期望形成為梯形。其原因可考慮為，因第1步驟之蝕刻 方式為向基板表面喷出钱刻液，所以形成第2金屬層8a 之金屬（Mo、或MoNb、MoNd等Mo合金等）之鈍化被抑制； 及藉由第1步驟使第1金屬層7 a及第2金屬層8 a被蝕刻 至露出玻璃基板6表面為止、或接近此狀態為止，故於第 2步驟中，第1金屬層7a及第2金屬層8a於沿膜面之方 向以相對較短之時間被刻，在金屬之鈍化發生前钱刻即 11 312/發明說明書(補件)/93-08/93115595 1243407 結束等 申請 步驟中 之溫度 基板及 面均勻 率的差 根據 法，於 將金屬 I虫刻液 屬被膜 快。因 底面為 使極薄 基板表 液，與 之方向 名虫刻， 大型化 方法中 且使基 方向被 特別成 。圖 1 0 ( a )〜（c 專利範圍第2項 ，對搬送滾筒加 ，因此，即使裝 蝕刻液之溫度也 ，不會發生溫度 異，可均勻蝕刻 申請專利範圍第 第1步驟中，藉 被膜於膜厚方向 5向基板表面1 2 a之蝕刻速度， 此，金屬被膜2a 止而使基板表面 之膜被殘留。此 面上從上方側邊 進行浸潰處理時 被蝕刻。其結果 使剖面成為梯形 ，亦不需要浸潰 ，於藉由第1步 板表面露出後， 蝕刻，故於第2 為問題，無須擔 )中 之 -元科 -狗 :號9 之 發 明 的 1虫 刻 處 溫 至 與 裝 滿 於 基 滿 1虫 刻 液 之 基 板 不 會 降 低 0 因 此 誤 差 所 以 基 板 基 板 之 表 面 整 體 3 項 之 發 明 的 基 由 向 基 板 表 面 噴 Μ 刻 〇 亦 即 如 噴 出 故 基 板 表 相 較 於 沿 著 膜 面 主 要 於 膜 厚 方 向 1 露 出 或 腐 ik 後 ， 於 第 2 步 驟 端 部 向 下 方 側 邊 同 樣 地 金 屬 被 如 圖 9( :b )所 示 〇 另 外 ， 此 處 理 處 理 άπ. 为又 之 大 型 處 驟 將 金 屬 被 膜 1虫 藉 由 第 2 步 驟 步 驟 中 ， 即 使 發 心 在 基 板 表 面 之 係光阻膜。 理方法，係於第2 板上之蝕刻液相同 與搬送滾筒接觸， ，基板的溫度為全 表面整體無蝕刻速 〇 板之蝕刻處理方 出之蝕刻液，主要 圖9 ( a )所示般，因 面1上所形成之金 方向，較膜厚方向 被蝕刻，腐蝕至其 至接近底面為止而 中，經由於傾斜之 端部流下之蝕刻 膜主要於沿著膜面 般，金屬膜2 b被 方法中，即使基板 理槽。又，此處理 刻至其底面為止， 金屬被膜沿其膜面 生氫氣氣泡也不會 金屬配線圖案之間 12 312/發明說明書(補件)/93-08/93115595 1243407 ， 為(a以屬 8 第項 浸不大 的金成 ，送 向支 裝進被 中膜10類 金層圍 1 行之擴 好之形 中 搬方板 體與屬 法 被圖種 1 屬範第 進狀分 良成望 置所 厚基整 ，金 方屬如 2 第金利圍板簷部 經形期 裝驟膜由 面液刻 理金 ，有之 2 專範 基屋之 均所依 理 步於向 表刻蝕 處之即面幻第請利對成c)8b8b®)處送要嘴板蝕向 刻成亦表合之申專如形0(層層剖 刻搬主噴基的方 姓形況之 3等據請生層 屬屬勺 蝕板膜出使滿之 的所情 6 或金根申發屬圖金金分 之基被吐，裝面 明 面之板 U 合，述會金如 2 2 h 板由屬從液所膜。 發表膜 基鋁紹 況上不 2 且 ^ 基經金，刻 上著 、 第 第 之 存之板合璃如等情與，第，及及專 的向使内 蝕體沿 殘項基層玻例鈦之，地之況 bbt 明嘴以槽給整於 式 4 璃之對，化 刻法 樣上情 77d 發 噴藉理 供面要 形 第玻金 ，膜is触 方同層 k 層層 δ 之霧 ，處 面表主 狀圍其 合示合 、 行 理法屬-2屬屬^1項噴液 2 表板， 膜範且 或所層 銳進 處方金12金金 一 5 從刻第 板基地 或利 ，屬 圖之化 膜刻理 1 圖 lit 第，li於 基此同 狀專 板金面 金麵被<i處第 S、 第第 C 圍内出 ， 之由相 粒請 基之剖 合或屬 的刻於#fl， 由面 範 槽噴後 持藉時 以申璃 上大或la金明li之 C 示得剖 利理面 此支， 理 膜 如玻以 擴屬與 之發 之時份 所使的 。 專處表 。 所液處 屬 ， 為 類分金 、 成之明 理部圖 ， 膜形請 1 板刻 段刻潰 金又板 種部之 7 組 項發處 要面刻 被梯申 第基触 手触浸 。 有 基 2 之 上層所 3 之 潰必剖 蝕屬為 於 的被持 滿行膜 312/發明說明書(補件)/93-08/93115595 13 1243407 申請專利範圍第6項之發明的蝕刻處理裝置中，於第2 處理槽内，藉由滾筒加溫手段，使搬送滾筒加溫至與基板 上裝有的蝕刻液同樣之溫度，故即使裝有液體之基板與搬 送滾筒接觸，也無基板及蝕刻液溫度下降之狀況。因此， 基板溫度整面均勻，且不會發生溫度誤差，所以不會產生 基板表面整體上蝕刻速率之差異，使均句蝕刻基板表面整 體。 申請專利範圍第7項之發明的基板之蝕刻處理裝置中， 於第1處理槽内，從喷霧噴嘴向經由基板搬送步驟所搬送 的基板表面喷出蝕刻液，藉以使金屬被膜主要於膜厚方向 被蝕刻。此後，於第2處理槽内，從吐出噴嘴向經由基板 傾斜支持手段支持為傾斜姿勢之基板表面之傾斜方向上方 側之邊端部供給蝕刻液，使蝕刻液於基板表面上自上方側 邊端部流至下方側邊端部，藉由於該基板表面流下之蝕刻 液，與進行浸潰處理時相同地，使金屬被膜主要於沿著膜 面之方向被触刻。 申請專利範圍第8項之發明的蝕刻處理裝置中，構成於 玻璃基板上所形成之層合膜之2種類以上之金屬或合金之 各層，均經良好的蝕刻，層合膜之剖面（成為金屬配線等部 份之剖面）形成為所期望之梯形。 (發明效果） 根據申請專利範圍第1項及申請專利範圍第3項之各發 明之基板蝕刻處理方法，即使基板大型化，處理槽亦沒有 必要隨之大型化，因此可抑制蝕刻液之使用量增力口 ，亦無 14 312/發明說明書(補件)/93-08/93115595 1243407 需使用大容量泵或提高處理槽的強度，且於屬危險物品之 I虫刻液的管理上亦沒有如此麻煩。又，不會發生如下之I虫 刻不良：於浸潰處理之情況，基板表面之金屬配線間等處 殘存粒狀或膜狀的金屬膜；或如申請專利範圍第4項之發 明的蝕刻處理方法般，基板為玻璃基板，且該玻璃基板之 表面所形成之金屬被膜為2種類以上之金屬或合金之層合 膜之情況，上層側之金屬膜處形成屋簷狀之不必要部份。 申請專利範圍第2項之發明的蝕刻處理方法，於第2步 驟中，可保持基板整體的溫度均勻，因此，可進行基板表 面整體之均句蝕刻處理。 使用申請專利範圍第5項及申請專利範圍第7項之各發 明之基板蝕刻處理裝置，可適當實施申請專利範圍第1項 及申請專利範圍第3項之各發明的方法，而可取得上述之 效果。 申請專利範圍第6項之發明的蝕刻處理裝置，於第2處 理槽内，可保持基板整體的溫度均勾，因此，可進行基板 表面整體之均勾蝕刻處理。 申請專利範圍第8項之發明的蝕刻處理裝置，可將玻璃 基板上所形成之2種類以上的金屬或合金的層合膜之剖面 (成為金屬配線等部份之剖面）形成為所期望之梯形。 【實施方式】 以下，針對本發明之最佳實施形態，參照圖1至圖8加 以說明。 圖1係顯示第1發明之一實施形態，為表示基板蝕刻處 312/發明說明書(補件)/93-08/93115595 15 1243407 理裝置之概略構造之一例的模型側面圖。此蝕刻處理裝置 係由噴霧式蝕刻處理部1 0與葉片式蝕刻處理部1 2連接設 置所構成。 噴霧式蝕刻處理部1 0具備：具有搬入側開口 1 6及搬出 側開口 1 8之密閉之第1處理槽1 4。第1處理槽1 4内部係 互相平行且沿著基板搬送路徑排列配置有數個支持且於水 平方向搬送基板W之可正.逆旋轉的搬送滾筒2 0。經由這 些搬送滾筒2 0，使基板W於處理槽1 4内來回移動。又， 於基板搬送路徑上方處，多數之喷霧噴嘴2 2沿著基板搬送 路徑排列配置。這些喷霧噴嘴2 2連結有蝕刻液供給管2 4， 蝕刻液供給管2 4係連結於未圖示之蝕刻液供給裝置。另 外，由噴霧噴嘴2 2向經由搬送滾筒2 0所搬送之基板W表 面噴出蝕刻液，例如由磷酸及硝酸及醋酸之混合液。又， 於處理槽1 0之底部連接有排液管2 6，使用過之蝕刻液收 集在處理槽1 4之底部，由處理槽1 4内通過排液管2 6而排 出。 葉片式蝕刻處理部1 2具備有鄰接於第1處理槽1 4而排 列S己置之第2處理槽28。第2處理槽28内部互相平行且 沿著基板搬送路徑排列配置有數個支持且於水平方向搬送 基板W之可正·逆旋轉的搬送滾筒3 0。經由這些搬送滾筒 3 0，使基板W於處理槽2 8内來回移動。又，於基板搬送路 徑之正上方處，在與第1處理槽1 4之搬出側開口 1 8相對 之搬入口附近，於下端面配設有細縫狀吐出口所形設之吐 出喷嘴3 2。於吐出噴嘴3 2連接有蝕刻液供給管3 4，而蝕 16 312/發明說明書(補件)/93-08/93〗15595 1243407 刻液供給管3 4之流動路徑連接於未圖示之蝕刻液供給裝 置。然後，從吐出噴嘴3 2的細縫狀吐出口，供給蝕刻液給 搬入第2處理槽2 8内且由搬送滚筒3 0支持並從吐出噴嘴 3 2正下方通過的基板W表面，例如與噴霧式蝕刻處理部1 0 中所使用的蝕刻液同一組成之由磷酸、硝酸及醋酸而成的 混合液呈簾幕狀吐出，使基板W表面整體裝滿蝕刻液3 8。 又，於處理槽2 8之底部連接有排液管3 6，形成由基板W 上向處理槽2 8之内底部流下的蝕刻液從處理槽2 8内經由 排液管36而排出。 具備圖1所示構造之蝕刻處理裝置中，首先，於噴霧式 蝕刻處理部1 0之第1處理槽1 4内，藉由搬送滾筒2 0使基 板W於水平方向來回移動，同時從噴霧喷嘴2 2向基板W 表面噴出蝕刻液，藉以使基板W表面上所形成之金屬被膜 由蝕刻液主要於膜厚方向蝕刻。然後，使金屬被膜之未被 光阻膜覆蓋的部分深入蝕刻至金屬被膜底面，形成基板表 面完全露出的狀態（參照圖9 ( a )及圖1 0 ( b ))，基板W從第 1處理槽1 4内通過搬出側開口 1 8搬出，搬送至葉片式蝕 刻處理部1 2。 搬入基板W到葉片式蝕刻處理部1 2之第2處理槽2 8内 後，從吐出噴嘴3 2向基板W表面供給蝕刻液，使基板W 表面整體裝滿蝕刻液3 8。然後，基板W於裝滿液體的狀態 下，藉由第2處理槽2 8内之搬送滾筒3 0於水平方向來回 移動之期間，經由基板W表面整體上所裝有的蝕刻液，與 進行浸潰處理時同樣地，使金屬被膜主要於沿著膜面之方 17 312/發明說明書(補件)/93-08/931 ] 5595 1243407 向蝕刻。藉此，金屬被膜被光阻膜覆蓋的部分被蝕刻，使 剖面形成為梯形（參照圖9 ( b )及圖10(c))。當葉片式蝕刻 處理部1 2中的蝕刻處理終了 ，基板W從第2處理槽2 8内 搬出，向接下來的水洗處理部（未圖示）搬送。 圖2係顯示葉片式蝕刻處理部之概略構造的模型側面 圖，為顯示與上述實施形態不同的構成例之圖。此葉片式 蝕刻處理部1 0 0具備有沿著基板搬送路徑相互平行地排列 設置之多個搬送滾筒1 0 2，藉由此等多個搬送滾筒1 0 2支 持著基板W進行直線性的來回移動（於水平面上搖動）。於 基板搬送路徑的一端側，在基板搬送路徑正上方之位置， 於下端面配設細縫狀吐出口所形設之吐出噴嘴 1 0 4。又， 於基板搬送路徑下方處，配設用以回收蝕刻液之液體回收 槽（第2處理槽）1 0 6。 吐出喷嘴1 0 4連接著蝕刻液供給管1 0 8，蝕刻液供給管 1 0 8連接著貯存有蝕刻液1 1 0之液體貯存槽1 1 2。蝕刻液供 給管1 0 8上插入設置有送液用泵1 1 4，且分別插入過濾器 1 1 6及開關控制閥1 1 8。然後，藉由開啟開關控制閥1 1 8， 使蝕刻液1 1 0從液體貯存槽1 1 2内經由送液用泵1 1 4通過 I虫刻液供給管1 0 8，向吐出噴嘴1 0 4供給触刻液，触刻液 從吐出噴嘴1 0 4之細縫狀吐出口以簾幕狀吐出，使通過吐 出噴嘴1 0 4的正下方之基板W表面整體裝滿蝕刻液。又， 液體回收槽1 0 6之底部連接有回收用配管1 2 0，而回收用 配管1 2 0之前端出口配置在液體貯存槽1 1 2内。 液體貯存槽1 1 2中，裝設有一端口連接於其底部而另一 18 312/發明說明書(補件)/93-08/93115595 1243407 端口設置在液體貯存槽1 1 2内之液體循環用配管1 2 2。此 液體循環用配管1 2 2上插入設置有液體循環用泵1 2 4，並 插入有加熱器1 2 6。然後，貯存於液體貯存槽1 1 2之蝕刻 液1 1 0通過液體循環用配管1 2 2循環，藉此，蝕刻液流過 加熱器1 2 6内部時予以加溫，利用控器（未圖示）控制加 熱器1 2 6，使液體貯存槽1 1 2内之蝕刻液1 1 0的溫度為一 定溫，例如調節成4 0 ° C。另外，將液體貯存槽1 1 2内之蝕 刻液1 1 0調節且保持為一定溫度之手段，並不侷限於圖式 例之構造。 各搬送滚筒1 0 2均可於正·逆方向旋轉，基板處理時， 除了搬入基板時或反轉基板時之些許時間以外，均持續旋 轉驅動。各搬送滾筒1 0 2的正下方分別配設有液體貯存容 器1 2 8。各液體貯存容器1 2 8分別連接有從蝕刻液供給管 1 0 8分岐於過濾器1 1 6及開關控制閥1 1 8之間的分岐配管 1 3 0。然後，在基板處理時，從液體貯存槽1 1 2内將調節成 一定溫度之蝕刻液，通過蝕刻液供給管1 0 8及分岐配管1 3 0 分別向液體貯存容器1 2 8内連續供給，使蝕刻液呈分別從 各液體貯存容器1 2 8溢出之狀態。從液體貯存容器1 2 8内 溢出之蝕刻液向液體回收槽1 0 6内流下，從液體回收槽1 0 6 内通過回收用配管1 2 0回到液體貯存槽1 1 2内。 液體貯存容器1 2 8係如圖3之斜視圖所示般，具有使搬 送滾筒1 0 2之周面的一部分的全長可浸潰於其内部所貯存 之蝕刻液中之形狀及大小。另外，於圖示例之裝置中，雖 係對每個搬送滾筒1 0 2設置液體貯存容器1 2 8，但亦可設 19 3丨2/發明說明書(補件)/93-08/93115595 1243407 置為對多個搬送滾筒1 0 2設置較大的液體貯存容器，使多 個搬送滾筒1 0 2浸潰於1個液體貯存容器内貯存的蝕刻液 中，又，亦可設置大型液體貯存容器，使全部的搬送滾筒 1 0 2浸潰在一個液體貯存容器所貯存的蝕刻液中亦可。 將葉片式蝕刻處理部1 0 0以圖2所示般構成時，各液體 貯存容器1 2 8内所貯存之一定溫度的蝕刻液中分別浸潰有 各搬送滾筒1 0 2之周面的一部分，同時，在此狀態下各搬 送滾筒1 0 2分別持續旋轉，藉以分別對各搬送滾筒1 0 2之 周面整體加溫至與基板W上所裝滿的蝕刻液相同溫度。所 以，即便裝滿液體之基板W與搬送滾筒1 0 2接觸，基板W 及其表面整體上所裝滿之蝕刻液的溫度亦不會下降。因 此，基板W之溫度全面均勻，不會發生溫度誤差，所以基 板W之表面整體上的蝕刻速率均一，不會發生處理不均勻 之狀況。 其次，圖4係顯示用以加溫搬送滾筒1 0 2之其他構造例 的斜視圖。於此例中，搬送滾筒1 0 2附近設置配置有吐出 口之液體吐出喷嘴1 3 2。此外，不設置液體貯存容器1 2 8， 將從蝕刻液供給管1 0 8分岐而來的分岐配管1 3 0與液體吐 出噴嘴1 3 2連接。 具備如此構造之裝置中，供給調節成一定溫度之蝕刻液 給液體吐出喷嘴1 3 2，從液體吐出噴嘴1 3 2的吐出口向持 續旋轉之搬送滾筒1 0 2之周面噴出一定溫度之蝕刻液，藉 以對搬送滾筒1 0 2外周面整體加溫至與基板W上裝滿的蝕 刻液相同之溫度。所以，即便裝滿液體之基板W與搬送滾 20 312/發明說明書(補件)/93-08/93115595 1243407 筒1 0 2接觸，基板W及其表面整體上所裝滿之蝕刻液的溫 度亦不會下降，基板W之溫度全面均勻。因此，基板W之 表面整體上的蝕刻速率均一，可防止處理不均勻之發生。 另外，從液體吐出喷嘴1 3 2向搬送滾筒1 0 2之外周面噴出 且從搬送滾筒1 0 2之周面垂落而下之蝕刻液，向液體回收 槽1 0 6内流下，且從液體回收槽1 0 6内通過回收用配管1 2 0 而回到液體貯存槽1 1 2内。 又，圖5係顯示用以加溫葉片式蝕刻處理部之搬送滾筒 之另一構造例，係顯示將搬送滾筒局部破壞之狀態的斜視 圖。此搬送滾筒1 3 4係於内部形成有液體通路1 3 6。又， 於搬送滾筒1 3 4之左、右之各旋轉支軸1 3 8 a、1 3 8 b的軸心 部内，亦形成有連通液體通路136之液體通路（未圖示）。 然後，一邊的旋轉支軸1 3 8 a連接於旋轉接頭1 4 0 a，旋轉 支軸1 3 8 a之液體通路經由旋轉接頭1 4 0 a，與加溫用液體 例如溫水之供給裝置（未圖示）所連接之溫水供給管1 4 2於 流動路徑連接。又，另一邊的旋轉支軸1 3 8 b連接於旋轉接 頭1 4 0 b，旋轉支軸1 3 8 b之液體通路經由旋轉接頭1 4 0 b， 與排水管1 4 4於流動路徑連接，排水管1 4 4與溫水供給裝 置於流動路徑連接。 具有如此構造之搬送滚筒1 3 4的基板處理裝置中，從溫 水供給裝置通過溫水供給管1 4 2，向搬送滾筒1 3 4内部之 液體通道1 3 6供給一定溫度之例如調節成4 0 ° C的溫水，經 由溫水流過液體通道1 3 6内，將搬送滚筒1 3 4整體加溫至 與基板W上所裝滿之蝕刻液相同之溫度。流經液體通道1 3 6 21 312/發明說明書(補件)/93-08/93115595 1243407 内時經由熱交換作用導致溫度下降之溫水，從液體通道 1 3 6内排出，通過排水管1 4 4回到溫水供給裝置，經由加 溫再循環使用。如此，藉由使搬送滾筒1 3 4自其内部加溫， 即使裝滿液體之基板W與搬送滾筒1 3 4接觸，基板W及其 表面整體上所裝滿之蝕刻液的溫度均不會下降，基板W之 溫度全面均勻。因此基板W之表面整體的蝕刻速率均一， 不會發生處理不均勻之狀況。 另外，加溫搬送滾筒之手段並不限於圖2至圖5所示之 構造者。例如，藉由橡膠加熱器（r u b b e r h e a t e r )等直接加 溫搬送滾筒之構造亦可。 其次，圖6係顯示第2發明之一實施形態，即顯示基板 名虫刻處理裝置之概略構造之一例的模型側面圖。此#刻處 理裝置係由噴霧式蝕刻處理部4 0及液體流動式蝕刻處理 部4 2連接設置而構成。 噴霧式蝕刻處理部40係與圖1所示之噴霧式蝕刻處理 部1 0同樣地，具備具有搬入側開口 4 6及搬出側開口 4 8 之密閉之第1處理槽44。於第1處理槽44内部，數個互 相平行且沿著基板搬送路徑配置排列有支持並於水平方向 搬送基板W之可正·逆旋轉的搬送滾筒5 0 a、5 0 b。經由這 些搬送滾筒5 0 a、5 0 b，使基板W被支持為水平姿勢，於處 理槽4 4内來回移動。又，於接近搬出側開口 4 8處之多個 搬送滾筒5 0 b係分別軸支於左右一對之滾筒安裝構件5 2。 滾筒安裝構件52係如同於圖7從正面所視的圖所示，以通 過搬送滾筒5 0 b之旋轉軸5 4之延長線上之點0、且與基板 22 312/發明說明書(補件)/93-08/93115595 1243407 搬送方向平行之直線（於圖7中，通過點0且與紙面垂直之 直線）作為中心，藉由未圖示之驅動裝置設置成在上下方向 上僅可於指定角度（破折線A及A ’ 所成角度）内迴旋。藉 由具備有可以使如此之搬送滾筒5 0 b適當迴旋的機構，於 第1處理槽4 4内可將基板W從水平姿勢改變至傾斜姿勢， 讓基板W可於傾斜姿勢下從第1處理槽44内搬出。 又，於基板搬送路徑之上方處，多數之噴霧噴嘴5 6沿 著基板搬送路徑排列設置。這些喷霧喷嘴5 6係與蝕刻液供 給管5 8連通連接，蝕刻液供給管5 8係與未圖示之蝕刻液 供給裝置於流動路徑連接。然後，形成為從喷霧喷嘴5 6 向藉由搬送滾筒5 0 a、5 0 b支持為水平姿勢且搬送之基板W 表面噴出蝕刻液之狀態。又，於處理槽44之底部，連通連 接有排液管6 0，形成使用過後之蝕刻液集中於處理槽4 4 之底部，從處理槽4 4内通過排液管6 0而排出之狀態。 液體流動式蝕刻處理部4 2係具備有鄰接於第1處理槽 4 4而配設之第2處理槽6 2。於第2處理槽6 2之内部，數 個互相平行且沿著基板搬送路徑排列配置之支持且於水平 方向搬送基板W之可正·逆旋轉的搬送滚筒64。搬送滾筒 64係例如圖8中從正面所視的圖所顯示，具有滾筒軸66, 該滾筒軸6 6係相對於水平面呈傾斜，例如相對於水平面傾 斜成為5°〜20°之角度，並可自由旋轉地被支持著（圖未顯 示其支持機構）。於滾筒軸6 6處，其中央部份固定有中央 滾筒6 8，兩端部則分別固定有側部滾筒7 0、7 0。又，滾筒 軸6 6之各個側部滾筒7 0的外側，分別固定有凸緣部7 2、 23 312/發明說明書(補件)/93-08/93115595 1243407 7 4。另夕卜，基板W之下面側由各滚筒6 8 ' 7 0、7 0支持且保 持為傾斜姿勢，同時，下位側邊端部與下位側之保護部7 2 連接，使其不會滑落。藉由具有如此構造的多個搬送滾筒 6 4，形成使基板W被支持為傾斜姿勢且於處理槽6 2内來回 移動之狀態。 又，於基板搬送路徑上方，在沿著基板搬送方向之方向 配設有大致可跨越處理槽6 2全長之蝕刻液供給部7 6。蝕 刻液供給部7 6係配置於藉由搬送滚筒6 4被支持為傾斜姿 勢之基板W表面之傾斜方向上的上位側邊端部之正上方位 置處。蝕刻液供給部7 6係例如圖8所示，由具備有管狀之 吐出噴嘴7 8及於此吐出噴嘴7 8的正下方與其平行地配設 之擋液板8 0所構成。吐出喷嘴7 8係在下面側於長度方向 等分設置多個吐出口而形成。此吐出噴嘴7 8係與蝕刻液供 給管8 2連通連接，蝕刻液供給管8 2係與未圖示之蝕刻液 供給裝置於流動路徑連接。於此種構造之蝕刻液供給部7 6 中，從吐出噴嘴78之多個吐出口向擋液板80上所吐出之 蝕刻液，係於擋液板8 0上流下之時，於沿著基板W之上位 側邊端之方向平均地擴散開來，之後從擋液板8 0上向基板 W之上位側邊端部流下。然後，供給於基板W之上位側邊 端部之蝕刻液，係從基板W表面上之上位側邊端部流下至 下位側邊端部，且於此時間内蝕刻基板W之表面。 又，於處理槽62之底部，連通連接有排液管84，從基 板W上向處理槽6 2之内底部流下之蝕刻液，係形成從處理 槽6 2内通過排液管8 4排出之狀態。 24 312/發明說明書(補件)/93-08/93115595 1243407 具備有圖6所顯示之構造的蝕刻處理裝置，首先，於噴 霧式蝕刻處理部40之第1處理槽44内，與圖1所示裝置 同樣地，基板W表面上所形成之金屬被膜係以蝕刻液主要 於膜厚方向蝕刻。當第1處理槽4 4内之蝕刻處理完成，將 基板W經由搬送滾筒5 0 b從水平姿勢變換為傾斜姿勢後， 從第1處理槽4 4内通過搬出側開口 4 8搬出，以搬送至液 體流動式蝕刻處理部42。 將基板W搬入液體流動式蝕刻處理部42之第2處理槽 6 2内後，一邊藉由搬送滾筒6 4將基板W支持為傾斜姿勢 並於水平方向來回移動，一邊從蝕刻液供給部7 6向基板W 表面之傾斜方向上的上位側邊端部供給蝕刻液。藉此，使 蝕刻液於基板W表面上，從上位側邊端部流向下位側邊端 部，並藉由於此基板W表面上流動之蝕刻液，與進行浸潰 處理時同樣地，主要於沿著膜面之方向蝕刻金屬被膜。當 流動式蝕刻處理部4 2之蝕刻處理完成，基板W係從第2 處理槽6 2内搬出，搬送至接下來的水洗處理部（未圖示）。 另外，於圖6所示之實施形態中，在喷霧式蝕刻處理部 4 0之第1處理槽4 4内，係一邊支持基板W為水平姿勢且 於水平方向上來回移動，一邊向基板W表面喷出蝕刻液以 進行蝕刻處理，其後，從水平姿勢變換基板W之姿勢為傾 斜姿勢，從第1處理槽4 4内搬出基板，向液體流動式蝕刻 處理部4 2以基板W處於傾斜姿勢之方式搬送，亦可在喷霧 式蝕刻處理部4 0之第1處理槽4 4内，一邊支持基板W為 傾斜姿勢且於水平方向上來回移動，一邊基板W表面喷出 25 312/發明說明書(補件)/93-08/93115595 1243407 蝕刻液以進行蝕刻處理，將基板W於直接以傾斜姿勢從第 1處理槽4 4内搬出，向液體流動式蝕刻處理部4 2搬送之 構造。又，於液體流動式蝕刻處理部42之第2處理槽62 内，支持基板W為傾斜姿勢而搬送之搬送滾筒6 4的構造， 或向支持為傾斜姿勢之基板W表面之上位側邊端部供給蝕 刻液之蝕刻液供給部7 6的構造等，並不限於圖示例之物。 例如，用以替代管狀之吐出喷嘴7 8及擋液板8 0，使用在 垂直於圖8之紙面方向具有長細縫狀吐出口之噴嘴，以簾 幕狀噴出液體向基板W之上位側邊端部供給之構造亦可， 簡言之，對基板而言只要是供給液體為層流狀之流動即可。 又，分別於圖1及圖6所示之實施形態，係於各處理槽 14、28、44、62内一邊分別使基板W來回移動（搖動），一 邊進行蝕刻處理，但一邊將基板W連續地向一個方向搬 送，一邊進行蝕刻處理之構造的裝置，亦能適用於本發明。 【圖式簡單說明】 圖1顯示第1發明之一實施形態，係顯示基板蝕刻處理 裝置之概略構造之一例之模型側面圖。 圖2顯示第1發明之蝕刻處理裝置之葉片式蝕刻處理部 之概略構造，係顯示與圖1所示者相異之構造例之模型側 面圖。 圖3係顯示屬圖2所示之葉片式蝕刻處理部之搬送滾筒 之加溫手段之構成要素的液體貯存容器之斜視圖。 圖4顯示葉片式蝕刻處理部之搬送滾筒之加溫手段之其 他構造例之斜視圖。 26 3 12/發明說明書(補件)/93-08/93115595 1243407 圖5顯示葉片式蝕刻處理部之搬送滾筒之加溫手段之另 外構造例，係顯示將搬送滾筒為部破壞之斜視圖。 圖6顯示第2發明之一實施形態，係顯示基板蝕刻處理 裝置之概略構造之一例之模型側面圖。 圖7係顯示構成圖6所示之蝕刻處理裝置的噴霧式蝕刻 處理部之處理槽内所設置之搬送滾筒構造之一例之正面 圖。 圖8係顯示構成圖6所示之蝕刻處理裝置的液體流動式 蝕刻處理部之處理槽内所設置之搬送滾筒及蝕刻液供給部 各構造之一例之正面圖。 圖9 ( a )、9 ( b )係用以說明本發明之作用之部份擴大剖面 圖。 圖1 0 ( a )〜（c )係用以說明於蝕刻玻璃基板表面上由2種 類以上之金屬或合金之層合膜形成之金屬被膜之情況之本 發明之作用的部份擴大剖面圖。 圖1 1係用以說明習知之浸潰式蝕刻處理的問題點之部 份擴大剖面圖。 圖12-1係顯示於表面由2種類以上之金屬或合金之層 合膜構成之金屬被膜所形成的基板之部份擴大剖面圖。 圖1 2 - 2係用以說明圖1 2 - 1所示之基板經由浸潰方式蝕 刻處理之情況之習知問題點的部份擴大剖面圖。 (元件符號說明） 10 喷霧式蝕刻處理部 12 葉片式蝕刻處理部 27 312/發明說明書(補件)/93-08/93115595 1243407 14 第 1 處 理 槽 16 搬 入 側 開 口 18 搬 出 側 開 口 20 搬 送 滾 筒 22 噴 霧 喷 嘴 24 刻 液 供 給 管 26 排 液 管 28 第 2 處 理 槽 30 搬 送 滾 筒 32 吐 出 噴 嘴 34 1虫 刻 液 供 給 管 36 排 液 管 38 刻 液 40 噴 霧 式 刻 處 理 部 42 液 體 流 動 式 姓 刻 處理部 44 第 1 處 理 槽 46 搬 入 側 開 口 48 搬 出 側 開 口 50a 搬 送 滾 筒 50b 搬 送 滾 筒 52 滾 筒 安 裝 構 件 5 4 旋 轉 轴 56 噴 霧 喷 嘴 58 1虫 刻 液 供 給 管 312/發明說明書(補件)/93-08/931155951243407 Description of policy and invention: [Technical field to which the invention belongs] The present invention relates to a method and an engraving process for a glass substrate for a liquid crystal display, a printing substrate, a semi-engraving liquid, and a substrate formed on a substrate surface. Prior art] The method for supplying an etching solution to the surface of a substrate is to spit I insect solution onto the surface of the substrate in the vertical axis rotation direction in the substrate holding plane to transfer the substrate of the base roller to the base of the roller and move it upward. A method of disposing a plurality of etching liquids to etch the substrate, and performing etching treatment on the plate in a state of being immersed in the etching liquid through the processing tank. However, in the case of forming a trapezoidal cross-section of the absolute wiring when forming an insulating film on the metal wiring on the substrate, the substrate is immersed in an I-etching process. That is, the processing device is a basic device which is provided with a processing device for placing the processing tank in the processing tank, and supplies a corroded metal film from a surface of a substrate such as a glass substrate for a sink device, a plasma display conductor wafer, and the like through a pump to etch a specified pattern. . , The substrate is engraved on the rotating disk piece by piece, while the substrate is rotated in water, while the substrate is etched from the spray nozzle to the substrate; transported in a horizontal direction, while the spray nozzle carried by the substrate is moved to the substrate The method of spraying the surface by etching; storing a plurality of rollers arranged in an etching tank in the processing tank, moving the substrate back and forth in the horizontal direction to match the basic wiring pattern, and for the purpose of improving the characteristics of the gold edge, it is required to use gold The formula was carried out with I insect engraving. Therefore, according to the conventional technique, a plurality of rollers are arranged in the substrate to the substrate, and the etching tank 312 / Invention Specification (Supplementary Note) (circulation) is circulated to the processing tank by using the sink of the sink which is appropriately recovered by the I insect etching solution. Pieces) / 93-08 / 93〗 15595 5 1243407 liquid, while the substrate is immersed in the etching solution stored in the processing tank, the substrate is moved back and forth in the horizontal direction through the transfer roller to perform substrate immersion deal with. (For example, refer to Japanese Patent Application Publication No. 197, 767.) [Summary of the Invention] (Problems to be Solved by the Invention) However, in recent years, substrates have tended to become larger and have the following problems: For example, a glass substrate for a liquid crystal display device has evolved to use a large substrate having a length of 2 meters on one side. In terms of substrate immersion processing equipment, in order to respond to the increase in the size of such substrates, it is necessary to increase the size of the processing tank. With the increase in the size of this processing tank, the amount of etching solution used has increased significantly. The pump for circulating supply from the sink tank to the processing tank must also have a large capacity. In addition, it is necessary to increase the strength of the processing tank, and in the office, the amount of the etching solution for storing and storing dangerous materials increases, and the management thereof becomes troublesome. In the conventional method for immersing a substrate, when a part of the metal film is dissolved by an etching solution, fine bubbles of hydrogen generated in the liquid do not float toward the liquid surface, and adhere to the surface of the substrate and remain directly. Phenomenon. If these bubbles remain on the surface of the substrate, the part is blocked by the bubbles due to the contact between the metal film and the etchant, and the metal cannot be dissolved. As a result, as shown in a partially enlarged sectional view of FIG. 11, there is a problem that the metal film 4 remains in a granular or film form between the metal wiring patterns 2 on the substrate surface 1. Element symbol 3 in FIG. 11 is a photoresist film. In the manufacturing process of a liquid crystal display device or a plasma display, as shown in 6 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407, as shown in Figure 1 2-1, it is attached to the surface of the glass substrate 6, and A laminated film of two or more types of metals or alloys, for example, a metal film composed of the first metal layer 7 of Shao (or Ming alloy) and the second metal layer 8 such as molybdenum and chromium is etched in a specified pattern. In this case, the conventional method for immersing the substrate is as shown in FIG. 1-2. In the second metal layer 8 c of the metal film after the etching, the eaves remain on the first metal layer 7 c. Unnecessary part of the status. This is considered to be because the metal coating is formed of two types of metal laminated films. During the substrate immersion process, one of the metal molybdenum or chromium is passivated, causing the second metal layer 8 Immediate response stopped on the way. As shown in Figure 12-2, if an unnecessary portion in the shape of an eave is formed at the second metal layer 8c on the first metal layer 7c, then even if an insulating film is formed on the metal film, the space between the insulating film and the metal film is still Voids are generated, and there is a problem that product defects occur. The element number 9 in Figs. 12-1 and 1 2-2 is a photoresist film. The present invention has been made in view of the above-mentioned circumstances, and an object thereof is to provide an etching of a substrate that does not need to increase the size of a processing tank to cope with the increase in the size of the substrate, and does not cause poor etching in the case of immersion processing. A processing method, and an etching processing apparatus which can be adapted to implement the method. (Means for Solving the Problem) The invention of item 1 of the scope of patent application is characterized in that the etching processing method for supplying a substrate with an etching solution to the surface of the substrate and etching the metal film formed on the surface of the substrate into a specified pattern includes: In the first step, an etching solution is sprayed onto the surface of the substrate, and the metal film is mainly etched in the thickness direction; and in the second step, the etching solution is supplied to the substrate 312 / Invention Manual (Supplement) / after the first step is etched. 93-08 / 93115595 7 1243407 The surface of the board is filled with an etching solution on the entire surface of the substrate, and the metal film is mainly etched along the direction of the film surface. The invention of item 2 of the scope of patent application is characterized in that, in the etching treatment method described in item 1 of the scope of patent application, in the above-mentioned second step, the entire surface of the substrate filled with the etching solution is arranged in parallel with each other. Each transfer roller supports and moves, and the aforementioned transfer roller is heated to the same temperature as the etching solution filled on the substrate. The invention of claim 3 in the scope of the patent application is characterized in that the etching processing method for supplying a substrate with an etching solution to the substrate surface and etching the metal film formed on the substrate surface into a predetermined pattern includes the following steps: An etching solution is sprayed on the surface, and the metal film is mainly etched in the thickness direction; and in a second step, after the first step is etched, the etching solution is supplied to the upper side of the substrate surface that is supported in an inclined posture in the inclined direction. The end portion causes the etchant to flow from the upper side edge portion to the lower side edge portion on the substrate surface, and the metal film is mainly etched in a direction along the film surface. The feature of the invention in the fourth scope of the patent application is the etching treatment method described in any one of the first to the third scope of the patent application. The substrate is a glass substrate, and the metal film formed on the surface of the glass substrate is 2 For laminated films of more than one type of metal or alloy, the etching solution used in the first step and the etching solution used in the second step are chemical solutions of the same composition. The invention of claim No. 5 in the scope of the patent application is characterized in that, in the etching processing method of supplying the etching solution to the substrate surface and etching the metal film formed on the substrate surface into a predetermined pattern, the method includes a first processing tank; In this first processing tank, a substrate transfer means for supporting and transferring substrates is provided; 8 312 / Invention Manual (Supplement) / 93-08 / 93115595 1243407 is provided above the substrate transfer path of the substrate transfer means, and is transferred toward the via substrate A spray nozzle for spraying an etching solution on the surface of the substrate carried by the means; a second processing tank connected to the first processing tank; a substrate supporting means disposed in the second processing tank and supporting the substrate; A discharge nozzle for carrying out the substrate surface supported by the substrate support means from the first processing tank and into the second processing tank, and filling the entire surface of the substrate with an etching solution. The feature of the invention in the sixth aspect of the patent application is the etching processing device described in the fifth aspect of the patent application. The substrate conveyance means is composed of a plurality of conveyance rollers arranged in parallel to each other, and is provided with the conveyance mechanism. A roller heating means for heating the roller to the same temperature as the etching solution filled on the substrate. The feature of the invention of claim 7 in the scope of the patent application is that the etching processing method for supplying an etchant to the substrate surface and etching the metal film formed on the substrate surface into a specified pattern includes: a first processing tank; A substrate transfer means provided in the first processing tank to support and transfer substrates; a spray nozzle provided above the substrate transfer path of the substrate transfer means to spray the etchant on the surface of the substrate transferred by the substrate transfer means; A second processing tank provided in the first processing tank; a substrate tilt supporting means disposed in the second processing tank to tilt and support the substrate; and supplying an etching solution to be carried out from the first processing tank and carried into the foregoing In the second processing tank, the edge portion on the upper side of the substrate in the inclined direction is supported by the substrate tilt support means in the inclined posture, so that the etching solution flows from the upper side edge portion on the substrate surface to the lower side edge portion. Spit out the nozzle. 9 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 The feature of the invention in the eighth aspect of the patent application is in the etching treatment device described in any one of the fifth to seventh aspects of the patent application. The substrate glass The substrate, the metal film formed on the surface of the glass substrate is a laminated film of two kinds of metals or alloys, a medicine consisting of an etching solution from the spray nozzle to the substrate surface and an etching solution supplied from the ejection nozzle to the substrate surface liquid. In the first step, the substrate etching treatment of the invention according to the scope of application for the patent is carried out in the first step. The etching solution sprayed onto the surface of the substrate mainly etches the film in the thickness direction. That is, as shown in a part of the enlarged view of FIG. 9 (a), the etching speed of the metal film 2a formed on the substrate 1 is caused by the contact liquid 5 penetrating to the substrate surface 1π, compared with The film direction becomes faster than the film thickness direction. Therefore, the metal coating film 2a is mainly etched in the direction of the film and is etched to the bottom surface. After the substrate surface 1 is exposed, in the second step, the entire surface of the substrate is filled with an etching solution to perform the immersion treatment. The metal coating is mainly etched along the film surface. As a result, as shown in a partially enlarged sectional view of FIG. 9 (b), the metallic film 2b is etched to become trapezoidal in cross section. In addition, in this process, even if the substrate is enlarged, a large groove is not required like the dipping process. Moreover, in this processing method, after the first film is etched to the bottom surface through the first step and the substrate surface is exposed, or after the etching is close to the bottom surface, the metal film is etched in the surface direction through the second step. In the second step, even if bubbles of hydrogen occur, it is a particular problem, and there is no need to worry that the metal wiring pattern on the surface of the substrate has a metal film remaining in a granular or film form. 312 / Invention Manual (Supplement) / 93-08 / 93115595 The range is the same method as above for glass ejection, so that the gold section surface is square and square. Therefore, in the direction, the gold method is used to engrav the gold to its film. In between 10 1243407, as in the etching treatment method of the invention claimed in item 4 of the application, the substrate is a glass substrate, and the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys. Case, that is, as shown in a partially enlarged sectional view of FIG. 10 (a), a laminated film having two or more kinds of metals or alloys on the surface of the glass substrate 6, such as the first metal of aluminum (or aluminum alloy) In the case where the metal film composed of the layer 7 and the second metal layer 8 such as molybdenum and chromium is etched, according to the etching treatment method of the invention in the first patent application scope, as described above, the first metal is made by the first step The layer 7 and the second metal layer 8 are mainly etched in the film thickness direction, and as shown in a partially enlarged cross-sectional view of FIG. 10 (b), the surface of the glass substrate 6 is exposed or etched to a state similar to that, and then Make the first metal in step 2 7a and the second metal layer 8a are etched along the direction of the film surface. Therefore, the second metal layer on the first metal layer does not form an unnecessary portion like an eave when the substrate is immersed. (Refer to Fig. 1 2-2), and as shown in a partially enlarged sectional view of Fig. 10 (c), both the first metal layer 7b and the second metal layer 8b are well etched so that the first metal layer 7b The cross-section of the metal film formed by the layer 7 b and the second metal layer 8 b (the cross-section of a portion serving as a metal wiring or the like) is formed into a trapezoid as desired. The reason for this is considered to be that the passivation method of the first step is to spray money on the substrate surface, so the passivation of the metal (Mo, or Mo alloy such as MoNb, MoNd, etc.) forming the second metal layer 8a is suppressed; and In the first step, the first metal layer 7 a and the second metal layer 8 a are etched until the surface of the glass substrate 6 is exposed or close to this state. Therefore, in the second step, the first metal layer 7 a and the second metal layer 7 a are etched. The metal layer 8a is engraved in a relatively short time along the direction of the film surface. The temperature before the passivation of the metal is 11 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407. The difference between the uniformity of the substrate and the surface is based on the method, and the metal I insect etch solution is a coating. Because the bottom surface is made of a very thin substrate surface liquid, the direction is well-known, and the base direction is specially made in the large-scale method. Fig. 10 (a) ~ (c) The second item of the patent range is added to the conveying roller. Therefore, even if the temperature of the etching solution is installed, no temperature difference occurs. The first step of the patent application range can be uniformly etched. The etching rate of the substrate surface 1 2 a in the film thickness direction 5 is to prevent the metal film 2 a from leaving the film on the substrate surface. This surface is etched during the immersion treatment from the upper side. As a result, the cross section becomes Trapezoidal, also does not need to be immersed, after the surface of the plate is exposed through the first step, it is etched, so it is a problem in the second, there is no need to bear. And the substrate filled with the base full 1 insect etching solution will not reduce 0. Therefore, the base of the entire surface of the substrate substrate 3 items of the invention is sprayed M to the substrate surface. That is, if sprayed out, the substrate surface is compared with The film surface is mainly exposed or rotted in the film thickness direction 1, and the metal layer is similarly coated on the lower side at the end of the second step as shown in FIG. 9 (: b) Shown 〇 In addition, this process is also treated as a large-scale process. The metal film 1 is used in the second step, even if the hair is a photoresist film on the surface of the substrate. The method is based on the fact that the etching solution on the second plate is in contact with the conveying roller. The temperature of the substrate is the etching solution produced by the entire surface without the etching rate. The etching solution is mainly shown in Figure 9 (a). Due to the direction of the gold formed on the surface 1, it is etched in the direction of the film thickness, and etched until it is close to the bottom surface. The etching film flowing down the inclined end is mainly along the film surface, and the metal film 2b is In the method, even the substrate is grooved. In addition, this process is engraved until the bottom surface, and the metal coating film generates hydrogen gas bubbles along the surface of the film. The metal wiring pattern will not be between the metal wiring patterns. 12 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 The first item, Jincheng, which is not soaked, is sent to the branch and packed into a shape that is surrounded by a 10-layer gold layer in the middle film. The moving plate and the genus are shown in Figure 1 The thickness of the base is thick, and the gold square belongs to the second section of the eaves of the Jinli perimeter. The mask is carved by the surface liquid, and some of the two special basic houses step on the surface of the etching. To the right c) 8b8b®), send the mouth plate etched to the engraved application form 0 (layer-by-layer engraving of the third name of the main spray base, etc.) The etched plate film gives full affection 6 or Jin Genshenfa belongs to the figure of gold and gold. The plate is mounted on the surface and the surface is closed, and the gold such as 2 2h is covered by the subordinate liquid film. The basic aluminum profile is not 2 and ^ basic gold, engraved with the first and the last of the board, such as the case, the first, and the special, to the internal corrosion body along the residual grassroots glass case titanium , The condition of the ground, bbt, the mouth of the mouth to the whole of the 4th pair of glass, the method of engraving on the 77d hair spray, the supply surface is shaped glass, the film is contact with the same layer of k layer of fog, The main surface of the surface is surrounded by its combination, and it is managed by legal-2, genus ^ 1 item of liquid spray 2 watch plate, film fan or layer of advanced advance prescription gold 12 gold gold 5 5 from the carved base or profit, It belongs to the chemical film engraving 1 of the picture. The figure is lit. < Inside S and C of the i-section, it is cut by the phase or the base, and it is carved in #fl. When spraying from the surface fan slot, the loan is applied to Shenli or La Jinming. C shows that this branch is sharp, and the film is made by expanding the time when it belongs. Dedicated table. The solution belongs to the class of gold, Cheng Zhiming's management department, the film shape please 1 engraved segment engraved gold and plate seed 7 group of the hair, the face should be immersed by Titian tentacles. The base layer 2 and the upper layer 3 must be etched. The full-line film 312 / Invention Specification (Supplement) / 93-08 / 93115595 13 1243407 In the etching treatment device of the invention in the sixth scope of the patent application In the second processing tank, the conveying roller is heated to the same temperature as the etching solution installed on the substrate by means of a roller heating means, so even if the liquid-filled substrate is in contact with the conveying roller, there is no substrate and etching. The temperature of the liquid drops. Therefore, the temperature of the entire substrate is uniform, and no temperature error occurs, so the difference in etching rate across the entire surface of the substrate does not occur, so that the uniform surface etches the entire substrate surface. In the substrate etching processing device of the invention claimed in claim 7 of the scope of application, an etching solution is sprayed from the spray nozzle to the surface of the substrate transferred through the substrate transfer step in the first processing tank, so that the metal film is mainly formed on the film thickness. The direction is etched. Thereafter, in the second processing tank, an etching solution is supplied from the discharge nozzle to the edge end of the substrate in the oblique direction on the substrate surface that is supported by the substrate tilt support means in an inclined posture, so that the etching solution is from the upper side edge on the substrate surface. The part flows to the lower side end, and the etching solution flowing down on the surface of the substrate makes the metal film be etched mainly in the direction along the film surface, as in the case of performing the dipping process. In the etching treatment device of the invention claimed in claim 8, the layers of two or more kinds of metals or alloys constituting the laminated film formed on the glass substrate are well etched, and the cross-section of the laminated film becomes a metal The cross section of the wiring and other parts) is formed into a desired trapezoid. (Effects of the Invention) According to the substrate etching processing method of each of the inventions in the scope of patent application No. 1 and the scope of patent application No. 3, even if the substrate is large, there is no need to increase the size of the processing tank, so the amount of etching solution can be suppressed. Zenglikou, also no 14 312 / Invention Manual (Supplement) / 93-08 / 93115595 1243407 Need to use large-capacity pump or increase the strength of the treatment tank, and it is not the same in the management of I insect solution which is a dangerous substance trouble. In addition, the following worming defects do not occur: in the case of immersion treatment, a granular or film-like metal film remains in the metal wiring room on the surface of the substrate; or the etching treatment of the invention as described in item 4 of the scope of patent application Generally, if the substrate is a glass substrate and the metal film formed on the surface of the glass substrate is a laminated film of two or more kinds of metals or alloys, an unnecessary portion in the shape of an eave is formed at the metal film on the upper layer side. The etching method of the invention in the second item of the patent application can maintain the temperature of the entire substrate uniformly in the second step. Therefore, the entire surface of the substrate can be uniformly etched. By using the substrate etching processing device for each of the inventions in the scope of patent application No. 5 and the scope of invention in the scope of patent application No. 7, the methods of the inventions in scope of the patent application No. 1 and the scope of patent application No. 3 can be appropriately implemented, and the above effect. The etching treatment device of the invention claimed in claim 6 can maintain the uniform temperature of the entire substrate in the second processing tank. Therefore, the entire surface of the substrate can be uniformly etched. The invention provides an etching treatment device according to the eighth aspect of the invention, which can form a desired trapezoidal cross-section (a cross-section that becomes a part of a metal wiring or the like) of a laminated film of two or more kinds of metals or alloys formed on a glass substrate. . [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described with reference to Figs. 1 to 8. FIG. 1 is a side view of a model showing an example of a schematic structure of a substrate etching section 312 / Invention Manual (Supplement) / 93-08 / 93115595 15 1243407, which is an embodiment of the first invention. This etching processing apparatus is composed of a spray-type etching processing unit 10 and a blade-type etching processing unit 12 connected to each other. The spray-type etching processing unit 10 includes a sealed first processing tank 14 having a carry-in opening 16 and a carry-out opening 18. The inside of the first processing tank 14 is parallel to each other, and there are a plurality of forward and reverse rotation transfer rollers 20 that support the substrate W in a horizontal direction and are arranged along the substrate transfer path. Through these transfer rollers 20, the substrate W is moved back and forth in the processing tank 14. Further, a plurality of spray nozzles 22 are arranged above the substrate transfer path along the substrate transfer path. An etching solution supply pipe 24 is connected to these spray nozzles 22, and the etching solution supply pipe 24 is connected to an etching solution supply device (not shown). In addition, an etching solution, such as a mixed solution of phosphoric acid, nitric acid, and acetic acid, is sprayed from the spray nozzle 22 to the surface of the substrate W transferred via the transfer drum 20. A drain pipe 26 is connected to the bottom of the processing tank 10, and the used etching solution is collected at the bottom of the processing tank 14 and discharged from the processing tank 14 through the drain pipe 26. The blade-type etching processing unit 12 includes a second processing tank 28 disposed adjacent to the first processing tank 14 and arranged in a row S. Inside the second processing tank 28, a plurality of forward and reverse rotation transfer rollers 30, which support and transport the substrate W in a horizontal direction, are arranged in parallel along the substrate transfer path. The substrate W is moved back and forth in the processing tank 28 through these transfer rollers 30. Also, directly above the substrate conveyance path, near the conveyance inlet opposite to the conveyance-side opening 18 of the first processing tank 14 is a discharge nozzle 3 2 formed on the lower end surface with a slit-shaped discharge opening. . An etching solution supply pipe 3 4 is connected to the ejection nozzle 3 2, and the etching path 16 312 / Invention Manual (Supplement) / 93-08 / 93〗 15595 1243407 The etching solution supply pipe 34 is connected to an etching (not shown). Liquid supply device. Then, from the slit-shaped discharge port of the discharge nozzle 32, an etching solution is supplied to the surface of the substrate W carried into the second processing tank 28 and supported by the transfer drum 30 and passing directly below the discharge nozzle 32, for example, with a spray A mixed solution of phosphoric acid, nitric acid, and acetic acid having the same composition as the etching solution used in the etching process section 10 is discharged in a curtain shape, and the entire surface of the substrate W is filled with the etching solution 38. A drain pipe 36 is connected to the bottom of the processing tank 28, and an etching solution flowing down from the substrate W to the bottom of the processing tank 28 is discharged from the processing tank 28 through the drain pipe 36. In the etching processing apparatus having the structure shown in FIG. 1, first, the substrate W is moved back and forth in the horizontal direction by the transfer roller 20 in the first processing tank 14 of the spray etching processing section 10, and at the same time from the spray nozzle 2 2 Etching solution is sprayed onto the surface of the substrate W, so that the metal film formed on the surface of the substrate W is etched mainly by the etching solution in the film thickness direction. Then, the portion of the metal film that is not covered by the photoresist film is deeply etched to the bottom surface of the metal film to form a state where the substrate surface is completely exposed (see FIG. 9 (a) and FIG. 10 (b)), and the substrate W is processed from the first step The inside of the tank 14 is carried out through the carrying-out opening 18, and is carried to the blade-type etching processing unit 12. After the substrate W is carried into the second processing tank 28 of the blade-type etching processing section 12, an etching solution is supplied from the discharge nozzle 32 to the surface of the substrate W, and the entire surface of the substrate W is filled with the etching solution 38. Then, while the substrate W is being filled with the liquid, the substrate W is moved by the transporting roller 30 in the second processing tank 28 in the horizontal direction, and the substrate W is immersed through the etching solution installed on the entire surface of the substrate W. Similarly, during the crushing treatment, the metal film is etched mainly along the side of the film surface 17 312 / Invention Specification (Supplement) / 93-08 / 931] 5595 1243407. As a result, the portion of the metal coating film covered with the photoresist film is etched to form a trapezoidal cross section (see FIGS. 9 (b) and 10 (c)). When the etching process in the blade-type etching processing section 12 is completed, the substrate W is carried out from the second processing tank 28 and transferred to the subsequent water washing processing section (not shown). Fig. 2 is a side view of a model showing a schematic structure of a blade-type etching unit, and is a diagram showing a configuration example different from the above-mentioned embodiment. This blade-type etching processing unit 100 is provided with a plurality of transfer rollers 102 arranged in parallel with each other along the substrate transfer path, and the multiple transfer rollers 102 support the substrate W to perform linear back and forth. Move (shake on a horizontal plane). On one end side of the substrate conveying path, directly above the substrate conveying path, a discharge nozzle 104 formed by a slit-shaped discharge port is arranged on the lower end surface. Further, a liquid recovery tank (second processing tank) 106 for recovering the etching solution is disposed below the substrate transport path. The ejection nozzle 104 is connected to an etching solution supply pipe 108, and the etching solution supply pipe 108 is connected to a liquid storage tank 1 12 in which an etching solution 1 110 is stored. A liquid feeding pump 1 1 4 is inserted into the etching liquid supply pipe 108, and a filter 1 1 6 and an on-off control valve 1 1 8 are respectively inserted. Then, by opening and closing the control valve 1 1 8, the etching solution 1 1 0 is passed from the liquid storage tank 1 1 2 to the liquid feeding pump 1 1 4 through the insect feeding solution supply pipe 1 8 and the nozzle 1 0 is ejected. 4. The etching liquid is supplied, and the etching liquid is discharged in a curtain shape from the slit-shaped discharge port of the discharge nozzle 104, so that the entire surface of the substrate W passing through the discharge nozzle 104 is filled with the etching solution. Further, a recovery pipe 1220 is connected to the bottom of the liquid recovery tank 106, and a front end outlet of the recovery pipe 1220 is disposed in the liquid storage tank 112. The liquid storage tank 1 1 2 is provided with a port connected to the bottom thereof and the other 18 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 The liquid circulation piping with the port installed in the liquid storage tank 1 1 2 1 2 2. A liquid circulation pump 1 2 4 is inserted into the liquid circulation pipe 1 2 2, and a heater 1 2 6 is inserted. Then, the etching solution 1 1 0 stored in the liquid storage tank 1 1 2 is circulated through the liquid circulation pipe 1 2 2, thereby heating the etching solution as it passes through the inside of the heater 1 2 6 and using a controller (not shown) (Shown) Control the heater 1 2 6 so that the temperature of the etching solution 1 1 0 in the liquid storage tank 1 12 is a certain temperature, for example, adjusted to 40 ° C. In addition, the means for adjusting and maintaining the etching solution 1 10 in the liquid storage tank 1 12 at a constant temperature is not limited to the structure of the illustrated example. Each of the transfer rollers 102 can be rotated in the forward and reverse directions, and during substrate processing, the substrate is continuously driven for rotation except for a certain period of time when the substrate is carried in or when the substrate is reversed. A liquid storage container 1 2 8 is disposed directly below each of the transfer rollers 102. Each liquid storage container 1 2 8 is connected to a branching pipe 1 3 0 branched from the etching solution supply pipe 108 to the filter 1 16 and the switch control valve 1 1 8. Then, during substrate processing, the etching solution adjusted to a certain temperature from the liquid storage tank 1 12 is continuously supplied to the liquid storage container 1 2 8 through the etching liquid supply pipe 108 and the branching pipe 1 30 respectively. The etching solution was caused to overflow from each of the liquid storage containers 1 2 8. The etching liquid overflowing from the liquid storage container 1 2 8 flows down into the liquid recovery tank 1 06, and returns from the liquid recovery tank 10 6 to the liquid storage tank 1 12 through the recovery pipe 1 2 0. The liquid storage container 1 2 8 has a shape and a size such that the entire length of a part of the peripheral surface of the transfer drum 102 can be immersed in the etching solution stored in the liquid storage container 1 2 as shown in the perspective view of FIG. 3. In addition, in the device shown in the figure, although a liquid storage container 1 2 8 is provided for each conveying drum 10 2, 19 3 丨 2 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 A large liquid storage container is provided for a plurality of transfer rollers 102, and a plurality of transfer rollers 102 are immersed in an etching solution stored in one liquid storage container. A large liquid storage container may also be provided. It is also possible to immerse all the transport rollers 102 in the etching solution stored in a liquid storage container. When the blade-type etching unit 100 is configured as shown in FIG. 2, a part of the peripheral surface of each of the transport rollers 102 is immersed in an etching solution of a certain temperature stored in each liquid storage container 1 28. At the same time, in this state, each of the transporting rollers 102 is continuously rotated, so that the entire peripheral surface of each of the transporting rollers 102 is heated to the same temperature as the etching solution filled on the substrate W. Therefore, even if the liquid-filled substrate W is in contact with the transfer roller 102, the temperature of the substrate W and the entire surface of the etchant filled with it will not drop. Therefore, the temperature of the substrate W is uniform throughout, and no temperature error occurs. Therefore, the etching rate on the entire surface of the substrate W is uniform, and no uneven processing occurs. Next, Fig. 4 is a perspective view showing another example of the structure for heating the transporting roller 102. In this example, a liquid discharge nozzle 1 3 2 is provided near the transfer drum 10 2 and a discharge port is provided. In addition, the liquid storage container 1 28 is not provided, and the branch pipe 1 30 branched from the etching solution supply pipe 108 is connected to the liquid discharge nozzle 1 32. In the device having such a structure, the etching liquid adjusted to a constant temperature is supplied to the liquid ejection nozzle 1 32, and the etching at a constant temperature is ejected from the ejection outlet of the liquid ejection nozzle 13 2 to the peripheral surface of the continuously rotating conveyance roller 102. The entire outer peripheral surface of the transfer roller 102 is heated to the same temperature as the etching solution filled on the substrate W. Therefore, even if the liquid-filled substrate W comes in contact with the transfer roller 20 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 cylinder 1 0 2, the temperature of the substrate W and the etching solution filled on the entire surface thereof is also It will not fall, and the temperature of the substrate W is uniform throughout. Therefore, the etching rate on the entire surface of the substrate W is uniform, and the occurrence of processing unevenness can be prevented. In addition, the etching solution ejected from the liquid discharge nozzle 1 3 2 to the outer peripheral surface of the conveyance drum 10 2 and dropped down from the peripheral surface of the conveyance drum 10 2 flows down into the liquid recovery tank 106 and is recovered from the liquid The inside of the tank 10 6 is returned to the liquid storage tank 1 12 through the recovery pipe 1 2 0. Fig. 5 is a perspective view showing another configuration example of a conveyance roller for heating the blade-type etching treatment section, and shows a state where the conveyance roller is partially damaged. The transfer drum 1 3 4 is formed with a liquid passage 1 3 6 inside. A liquid passage (not shown) communicating with the liquid passage 136 is also formed in the shaft center portion of each of the left and right rotation support shafts 1 3 a and 1 3 8 b of the transfer drum 1 3 4. Then, one side of the rotary supporting shaft 1 3 8 a is connected to the rotary joint 1 4 0 a. The liquid path of the rotary supporting shaft 1 3 8 a passes through the rotary joint 1 4 0 a and a heating liquid such as warm water supply device ( (Not shown) The connected hot water supply pipe 1 4 2 is connected to the flow path. In addition, the other rotation support shaft 1 3 8 b is connected to the rotation joint 1 4 0 b, and the liquid path of the rotation support shaft 1 3 8 b is connected to the drainage pipe 1 4 4 through the rotation path through the rotation joint 1 4 0 b. The drain pipe 1 4 4 is connected to the warm water supply device in a flow path. In the substrate processing apparatus having the conveying drum 1 3 4 having such a structure, the warm water supply device passes the warm water supply pipe 1 4 2 to supply the liquid passage 1 3 6 inside the conveying drum 1 3 4 with a constant temperature, for example, adjusted to 4 Warm water at 0 ° C flows through the liquid channel 1 3 6 through the warm water, and the entire conveying roller 1 3 4 is heated to the same temperature as the etching solution filled on the substrate W. Warm water flowing through the liquid channel 1 3 6 21 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407, which causes the temperature to decrease due to heat exchange, is discharged from the liquid channel 1 3 6 and passes through the drainage pipe 1 4 4 Return to the warm water supply device and reuse it by heating. In this way, by heating the transfer roller 1 3 4 from the inside thereof, even if the liquid-filled substrate W is in contact with the transfer roller 1 3 4, the temperature of the substrate W and the etching solution filled on the entire surface thereof will not drop. The temperature of the substrate W is uniform throughout. Therefore, the entire surface of the substrate W has a uniform etching rate, and no uneven processing occurs. In addition, the means for warming the conveying roller is not limited to those having a structure shown in Figs. 2 to 5. For example, a structure such as a rubber heater (r u b b e r h e a t e r) that directly heats the transfer drum may be used. Next, Fig. 6 is a side view of a model showing an example of a schematic structure of a substrate worm-etching processing apparatus according to an embodiment of the second invention. This #lithography processing device is configured by connecting the spray type etching processing portion 40 and the liquid flow type etching processing portion 42 together. The spray-etching process section 40 is similar to the spray-etching process section 10 shown in FIG. 1 and includes a sealed first processing tank 44 having a carry-in opening 46 and a carry-out opening 4 8. Inside the first processing tank 44, a plurality of forward and reverse rotation transfer rollers 5 0 a and 5 0 b which support and transport the substrate W in a horizontal direction are arranged in parallel with each other and arranged along the substrate transfer path. The substrates W are supported in a horizontal posture by these conveying rollers 50 a and 50 b, and are moved back and forth in the processing tank 44. In addition, a plurality of transfer rollers 5 0 b near the unloading-side openings 4 and 8 are the roller mounting members 52 supported on the left and right pairs, respectively. The roller mounting member 52 passes through the point 0 on the extension line of the rotation axis 54 of the transfer roller 5 0 b as shown in the front view in FIG. 7 and is connected to the substrate 22 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 A straight line parallel to the conveying direction (a straight line passing through point 0 and perpendicular to the paper surface in FIG. 7) is used as a center, and a driving device (not shown) is set so that the vertical direction can only be at a specified angle ( The angle between the dashed lines A and A '). By having a mechanism capable of appropriately rotating such a transport roller 50b, the substrate W can be changed from the horizontal posture to the inclined posture in the first processing tank 44, so that the substrate W can be processed from the first processing in the inclined posture. The groove 44 is carried out. Further, a plurality of spray nozzles 56 are arranged above the substrate transfer path along the substrate transfer path. These spray nozzles 58 are connected to an etching solution supply pipe 58, and the etching solution supply pipe 58 is connected to an etching solution supply device (not shown) in a flow path. Then, it is set as the state which sprayed the etching liquid from the spray nozzle 56 to the surface W of the board | substrate W conveyed | supported to the horizontal posture by the conveyance rollers 50a, 50b. A drain pipe 60 is connected to the bottom of the processing tank 44 to form a state where the used etching solution is concentrated on the bottom of the processing tank 44 and discharged from the processing tank 44 through the drain pipe 60. The liquid flow type etching treatment unit 42 is provided with a second treatment bath 62 arranged adjacent to the first treatment bath 44. Inside the second processing tank 62, there are a plurality of transfer rollers 64 that support the substrate W in parallel with each other and are arranged along the substrate transfer path and can transfer the substrate W in the horizontal direction. The conveying roller 64 is, for example, as shown in a front view in FIG. 8, and has a roller shaft 66. The roller shaft 6 6 is inclined with respect to a horizontal plane, for example, an angle of 5 ° to 20 ° with respect to the horizontal plane. Supported freely (the support mechanism is not shown in the figure). At the roller shaft 66, a central roller 6 8 is fixed at the central part, and side rollers 70, 70 are fixed at both ends. Further, flange portions 7 2, 23 312 / Invention Specification (Supplement) / 93-08 / 93115595 1243407 7 4 are fixed to the outer sides of the respective side rollers 70 of the roller shaft 66. In addition, the lower surface of the substrate W is supported by each of the rollers 6 8 '70, 70 and held in an inclined posture, and at the same time, the lower-side edge portion is connected to the lower-side protection portion 7 2 so that it does not slip off. With the plurality of transfer rollers 6 4 having such a structure, the substrate W is supported in an inclined posture and moved back and forth in the processing tank 62. An etching solution supply unit 76 is provided above the substrate transfer path in a direction along the substrate transfer direction so as to span the entire length of the processing tank 62. The etching solution supply section 7 6 is disposed at a position directly above the upper end of the upper side edge in the oblique direction of the surface of the substrate W supported by the conveyance roller 64 in an oblique posture. The etchant supply unit 76 is, for example, as shown in Fig. 8 and includes a pipe-shaped discharge nozzle 78 and a liquid blocking plate 80 disposed directly below the discharge nozzle 78 in parallel thereto. The discharge nozzle 78 is formed by arranging a plurality of discharge ports equally on the lower surface side in the longitudinal direction. The discharge nozzle 78 is connected to the etching solution supply pipe 82, and the etching solution supply pipe 82 is connected to an etching solution supply device (not shown) in a flow path. In the etching solution supply unit 7 6 having such a structure, the etching solution discharged from the plurality of discharge ports of the discharge nozzle 78 to the liquid blocking plate 80 flows along the substrate when the liquid blocking plate 80 flows down. The direction of the upper-side edge end of W spreads evenly, and then flows down from the upper of the fender 80 to the upper-side edge end of the substrate W. Then, the etching liquid supplied to the upper side edge portion of the substrate W flows from the upper side edge portion to the lower side edge portion on the surface of the substrate W, and the surface of the substrate W is etched within this time. Further, a drain pipe 84 is connected to the bottom of the processing tank 62, and the etchant flowing down from the substrate W to the bottom of the processing tank 62 is formed to be discharged from the processing tank 62 through the drain tube 84. status. 24 312 / Invention Manual (Supplement) / 93-08 / 93115595 1243407 An etching processing apparatus having a structure shown in FIG. 6 is firstly placed in the first processing tank 44 of the spray etching processing unit 40 and the first processing tank 44 shown in FIG. 1. Similarly to the display device, the metal coating film formed on the surface of the substrate W is mainly etched in the film thickness direction with an etchant. After the etching process in the first processing tank 44 is completed, the substrate W is transferred from the horizontal posture to the inclined posture via the transfer drum 50b, and then is carried out from the first processing tank 44 through the carrying-out side opening 48 to be transferred to Liquid flow type etching processing section 42. After the substrate W is transferred into the second processing tank 62 of the liquid flow etching processing unit 42, the substrate W is supported by the transfer roller 64 and the substrate W is tilted and moved back and forth in the horizontal direction. An etching solution is supplied to the upper-side edge end in the oblique direction of the surface of the substrate W. Thereby, the etchant is caused to flow from the upper side edge portion to the lower side edge portion on the surface of the substrate W, and the etching solution flowing on the surface of the substrate W is mainly the same as that when the immersion treatment is performed. The metal film is etched in the direction of the film surface. When the etching process of the flow-type etching processing section 42 is completed, the substrate W is carried out from the second processing tank 62 and transferred to the subsequent water washing processing section (not shown). In addition, in the embodiment shown in FIG. 6, in the first processing tank 44 of the spray etching processing unit 40, the substrate W is moved toward the substrate W while supporting the substrate W in a horizontal posture and moving back and forth in the horizontal direction. An etching solution is sprayed on the surface to perform an etching treatment. Thereafter, the posture of the substrate W is changed from a horizontal posture to an inclined posture, and the substrate is carried out from the first processing tank 44, and the substrate W is inclined to the liquid flow etching processing unit 42. It can also be transported in a posture manner. In the first processing tank 44 of the spray etching processing unit 40, the substrate W can be sprayed on the surface of the substrate W while supporting the substrate W in an inclined posture and moving back and forth in a horizontal direction. Instruction (Supplement) / 93-08 / 93115595 1243407 An etching solution is used to perform an etching process, and the substrate W is directly moved out of the first processing tank 44 in an inclined posture, and is transferred to the liquid flow type etching processing unit 42. In the second processing tank 62 of the liquid flow type etching processing unit 42, the structure of the transfer roller 64 that supports the substrate W in an inclined posture, or the upper edge end portion of the surface of the substrate W supported in the inclined posture The structure and the like of the etchant supply unit 76 that supplies the etchant are not limited to those shown in the drawings. For example, instead of the tubular ejection nozzle 78 and the baffle plate 80, a nozzle having a long slit-shaped ejection outlet in a direction perpendicular to the paper surface of FIG. 8 is used to eject liquid in a curtain shape toward the upper side of the substrate W The structure of the end supply is also possible. In short, as long as the substrate is a supply liquid in a laminar flow. In the embodiments shown in FIG. 1 and FIG. 6, the substrate W is etched while moving the substrate W back and forth (shaking) in each of the processing tanks 14, 28, 44, and 62. An apparatus having a structure that is transported in one direction while performing an etching process can also be applied to the present invention. [Brief Description of the Drawings] Fig. 1 shows an embodiment of the first invention and is a model side view showing an example of a schematic structure of a substrate etching processing apparatus. Fig. 2 shows a schematic structure of a blade-type etching processing unit of an etching processing apparatus of the first invention, and is a model side view showing a structural example different from that shown in Fig. 1. Fig. 3 is a perspective view showing a liquid storage container which is a constituent element of a heating means of a conveyance roller of the blade-type etching processing unit shown in Fig. 2. Fig. 4 is a perspective view showing another example of the structure of the heating means of the conveyance roller of the blade-type etching unit. 26 3 12 / Invention Manual (Supplement) / 93-08 / 93115595 1243407 Figure 5 shows another structural example of the heating means of the conveying roller of the blade-type etching processing section, and it is a perspective view showing that the conveying roller is partially broken. Fig. 6 is a side view of a model showing an example of a schematic structure of a substrate etching processing apparatus according to an embodiment of the second invention. Fig. 7 is a front view showing an example of a structure of a transfer drum provided in a processing tank of a spray etching processing unit constituting the etching processing apparatus shown in Fig. 6; Fig. 8 is a front view showing an example of each structure of a transfer roller and an etchant supply unit provided in a processing tank of a liquid flow type etching treatment unit constituting the etching treatment apparatus shown in Fig. 6; Figures 9 (a) and 9 (b) are partially enlarged sectional views for explaining the function of the present invention. Figs. 10 (a) to (c) are partially enlarged sectional views for explaining the effect of the present invention on a case where a metal film formed of a laminated film of two or more metals or alloys on the surface of an etched glass substrate is formed. Fig. 11 is a partially enlarged sectional view for explaining a problem of the conventional immersion etching process. Fig. 12-1 is a partially enlarged cross-sectional view showing a substrate formed by a metal film whose surface is composed of a laminated film of two or more kinds of metals or alloys. Fig. 12-2 is a partially enlarged cross-sectional view for explaining conventional problems in the case where the substrate shown in Fig. 12-1 is etched by immersion. (Explanation of component symbols) 10 Spray type etching processing part 12 Blade type etching processing part 27 312 / Invention specification (Supplement) / 93-08 / 93115595 1243407 14 First processing tank 16 Carry-in opening 18 Carry-out opening 20 Transport roller 22 Spray nozzle 24 Cutting liquid supply pipe 26 Draining pipe 28 Second processing tank 30 Transporting drum 32 Ejection nozzle 34 1 Insect cutting liquid supply pipe 36 Draining tube 38 Cutting liquid 40 Spray type processing unit 42 Liquid flow type processing Section 44 First processing tank 46 Carry-in opening 48 Carry-out opening 50a Transporting roller 50b Transporting roller 52 Roller mounting member 5 4 Rotating shaft 56 Spray nozzle 58 1 Insect engraved liquid supply pipe 312 / Invention manual (Supplement) / 93-08 / 93115595
28 1243407 6 0 排 液 管 62 第 2 處 理 槽 64 搬 送 滾 筒 66 滾 筒 轴 68 中 央 滾 筒 7 0 側 部 滾 筒 72 凸 緣 部 74 凸 緣 部 76 1虫 刻 液 供 給 部 78 吐 出 噴 嘴 80 擋 液 板 82 刻 液 供 給 管 84 排 液 管 1 00 葉 片 式 ik 刻 處理部 1 02 搬 送 滾 筒 1 04 吐 出 噴 嘴 1 06 第 2 處 理 槽 1 08 1虫 刻 液 供 給 管 110 1虫 刻 液 112 液 體 貯 存 槽 114 送 液 用 泵 116 過 〉慮 器 118 開 關 控 制 閥 1 20 回 收 用 S己 管 3 12/發明說明書(補件)/93-08/9311559528 1243407 6 0 Liquid discharge pipe 62 Second treatment tank 64 Transport roller 66 Roller shaft 68 Central roller 7 0 Side roller 72 Flange portion 74 Flange portion 76 1 Insect liquid supply portion 78 Ejection nozzle 80 Fender 82 engraved Liquid supply tube 84 Liquid discharge tube 1 00 Blade-type ik-etching processing unit 1 02 Transporting roller 1 04 Discharge nozzle 1 06 Second processing tank 1 08 1 Insect-cutting liquid supply pipe 110 1 Insect-cutting liquid 112 Liquid storage tank 114 For liquid feeding Pump 116> Conditioner 118 On-off control valve 1 20 S tube for recovery 3 12 / Invention manual (Supplement) / 93-08 / 93115595
29 1243407 12 2 液體循環用配管 1 24 液體循環用泵 12 6 加熱器 1 28 液體貯存容器 13 0 分岐配管 1 32 液體喷出噴嘴 1 34 搬送滾筒 13 6 液體通道 1 3 8 a 旋轉支軸 1 3 8 b 旋轉支軸 1 4 0 a 旋轉接頭 1 4 0 b 旋轉接頭 14 2 溫水供給管 14 4 排水管 A 破折線 A ’ 破折線 W 基板 312/發明說明書(補件)/93-08/9311559529 1243407 12 2 Liquid circulation piping 1 24 Liquid circulation pump 12 6 Heater 1 28 Liquid storage container 13 0 Manifold piping 1 32 Liquid ejection nozzle 1 34 Transfer drum 13 6 Liquid channel 1 3 8 a Rotary support shaft 1 3 8 b Rotary support shaft 1 4 0 a Rotary joint 1 4 0 b Rotary joint 14 2 Warm water supply pipe 14 4 Drain pipe A Broken line A 'Broken line W Substrate 312 / Invention Manual (Supplement) / 93-08 / 93115595