TW201728374A - Apparatus and method for the chemical treatment of a semiconductor substrate - Google Patents
Apparatus and method for the chemical treatment of a semiconductor substrate Download PDFInfo
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- TW201728374A TW201728374A TW105138420A TW105138420A TW201728374A TW 201728374 A TW201728374 A TW 201728374A TW 105138420 A TW105138420 A TW 105138420A TW 105138420 A TW105138420 A TW 105138420A TW 201728374 A TW201728374 A TW 201728374A
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- 239000000758 substrate Substances 0.000 title claims abstract description 197
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000126 substance Substances 0.000 title description 17
- 239000012530 fluid Substances 0.000 claims abstract description 147
- 239000007788 liquid Substances 0.000 claims description 135
- 238000004140 cleaning Methods 0.000 claims description 64
- 239000011248 coating agent Substances 0.000 claims description 64
- 238000000576 coating method Methods 0.000 claims description 64
- 230000001681 protective effect Effects 0.000 claims description 35
- 230000005540 biological transmission Effects 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000717 retained effect Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 5
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000011144 upstream manufacturing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 101100493710 Caenorhabditis elegans bath-40 gene Proteins 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
發明領域 Field of invention
本發明涉及如請求項1的前序部分所述的一種用於化學處理半導體基材的裝置。本發明另外還涉及一種用於化學處理半導體基材的方法。 The present invention relates to an apparatus for chemically treating a semiconductor substrate as described in the preamble of claim 1. The invention further relates to a method for chemically treating a semiconductor substrate.
發明背景 Background of the invention
在WO 2011/047894 A1中公開了一種用於用處理介質來化學處理矽基材的裝置。該矽基材首先在處理池前在基材上側整個平面用一保護液浸濕。接著在處理池上方在該矽基材的基材下側施加該處理介質，該處理介質對該矽基材在基材下側進行化學處理。通過該保護液來保護基材上側防止該處理介質。在處理池上方再次在基材下側施加保護液，以便補充從基材上側流下的保護液。缺點是，一方面該保護液會從基材上側滴下，由此影響了該處理介質的品質，且必須在基材上側對保護液補充加量。另一方面的缺點是，在將保護液滴下的可能性理想地最小化的情況下，基材上側不完全被保護液浸濕，或者在整個施加該處理介質的過程中不完全保持浸濕。 An apparatus for chemically treating a crucible substrate with a treatment medium is disclosed in WO 2011/047894 A1. The tantalum substrate is first wetted with a protective liquid on the entire upper side of the substrate before the treatment tank. The treatment medium is then applied to the underside of the substrate of the crucible substrate above the treatment cell, and the treatment medium is chemically treated on the underside of the substrate. The upper side of the substrate is protected by the protective liquid to prevent the treatment medium. A protective liquid is applied to the underside of the substrate again above the treatment tank to replenish the protective liquid flowing from the upper side of the substrate. The disadvantage is that, on the one hand, the protective liquid drops from the upper side of the substrate, thereby affecting the quality of the treatment medium, and the protective liquid must be replenished on the upper side of the substrate. A further disadvantage is that, in the case where the possibility of protecting the droplets is ideally minimized, the upper side of the substrate is not completely wetted by the protective liquid or is not completely wetted throughout the application of the treatment medium.
發明概要 Summary of invention
本發明所基於的任務是，提供一種裝置，其能夠簡單而經濟地化學處理半導體基材。 The invention is based on the object of providing a device which enables a simple and economical chemical treatment of a semiconductor substrate.
該任務通過具有請求項1所述特徵的一種裝置而得到解決。通過在傳輸方向上給塗覆裝置前置的預處理裝置，首先在該半導體基材上一生成環繞的並對要施加的流體，尤其是要施加的保護流體進行限定的限定區域，如此使得之後在該基材上側所施加的流體被保持於該限定區域上。環繞的限定區域優選地排斥該流體。環繞的限定區域借助該預處理裝置而在連接該基材上側與基材下側的基材端面上被生成，和/或在該基材上側上被生成。通過環繞的以及限定流體的該限定區域，基材上側構成了限定區域的一內部空間，在該內部空間中該流體可以以簡單的方式被加入或被施加。因為該限定區域把該流體保持於該基材上側上，所以該流體僅須粗略地確定劑量。另外該流體還不會從該基材上側滴下來，如此使得該處理流體的品質不受該流體的影響。從而不需要導致處理流體消耗增大的處理流體再劑量，如此使得該裝置具有高的經濟性。該處理流體優選地是一種處理液。該處理液尤其包含有氫氟酸和/或硝酸，如此使得該處理液體形成了一種蝕刻液。該第一塗覆裝置設置在該第二塗覆裝置的處理池上方，使得一方面及時把該流體施加到該基材上側上，且另一方面在處理該基材下側的過程中借助該處理液防止該所施加的流體 比如由於其表面張力從內部空間的角落回流。延長施加該流體的時間，使得該基材上側在該限定區域內儘可能長時間地完全被該流體覆蓋，尤其直至借助該處理液來處理該基材下側的過程結束。根據本發明的裝置尤其可以用於化學處理用以製造太陽能電池的半導體晶片。 This task is solved by a device having the features described in claim 1. By means of a pretreatment device which is applied to the coating device in the transport direction, a defined area which surrounds the fluid to be applied, in particular the protective fluid to be applied, is first produced on the semiconductor substrate, such that afterwards The fluid applied on the upper side of the substrate is held on the defined area. The surrounding defined area preferably repels the fluid. The surrounding defined area is formed by the pretreatment device on the end surface of the substrate connected to the upper side of the substrate and the lower side of the substrate, and/or formed on the upper side of the substrate. By the surrounding area defining the fluid and defining the fluid, the upper side of the substrate forms an internal space defining a region in which the fluid can be added or applied in a simple manner. Since the defined area holds the fluid on the upper side of the substrate, the fluid only has to be roughly determined in dose. In addition, the fluid does not drip from the upper side of the substrate, such that the quality of the treatment fluid is unaffected by the fluid. Thus, there is no need for a re-dosing of the treatment fluid which results in an increase in the treatment fluid consumption, thus making the device highly economical. The treatment fluid is preferably a treatment fluid. The treatment liquid contains in particular hydrofluoric acid and/or nitric acid such that the treatment liquid forms an etchant. The first coating device is disposed above the processing tank of the second coating device such that on the one hand the fluid is applied to the upper side of the substrate in time, and on the other hand during the processing of the underside of the substrate Treatment fluid prevents the applied fluid For example, due to its surface tension, it flows back from the corner of the internal space. The time during which the fluid is applied is extended such that the upper side of the substrate is completely covered by the fluid in the defined area for as long as possible, in particular until the end of the process of treating the underside of the substrate by means of the treatment liquid. The device according to the invention can be used in particular for the chemical treatment of semiconductor wafers for the production of solar cells.
如果該流體作為保護流體來構造，那麼及時地在處理該基材下側前施加該保護流體，但又儘可能遲地移至該處理池上方，使得該基材上側在該限定區域內儘可能長時間地完全被該流體覆蓋，尤其直至借助該處理液的處理過程結束和/或直至該半導體基材不再位於該處理池上方。該要施加的流體尤其是一保護液。該保護液尤其是含水的。如果排斥用水或蒸餾水作為保護液，那麼該限定區域優選地構造為疏水的。 If the fluid is constructed as a protective fluid, the protective fluid is applied in time before the underside of the substrate is processed, but moved over the processing tank as late as possible so that the upper side of the substrate is as close as possible within the defined area It is completely covered by the fluid for a long time, in particular until the end of the treatment by means of the treatment liquid and/or until the semiconductor substrate is no longer situated above the treatment tank. The fluid to be applied is in particular a protective liquid. The protective liquid is especially water-containing. If water or distilled water is rejected as a protective liquid, the defined area is preferably configured to be hydrophobic.
如果該流體作為處理流體，尤其作為處理液來構造，那麼也可化學處理該基材上側。比如借助處理液來移除發射器的電惰性重摻雜的上層。也把該上層稱作「無感層」。該處理流體尤其作為蝕刻液來構造。該蝕刻液為鹼性或酸性。 If the fluid is constructed as a treatment fluid, especially as a treatment fluid, the upper side of the substrate can also be chemically treated. For example, the treatment liquid is used to remove the electrically inert heavily doped upper layer of the emitter. This upper layer is also referred to as a "non-inductive layer." This treatment fluid is constructed in particular as an etchant. The etching solution is alkaline or acidic.
如請求項2所述的一種裝置保證了對半導體基材的簡單而經濟的化學處理。由於距離A，該第一塗覆裝置設置在靠近該處理池的第一末端，也即設置在該處理池的頭部。由此一方面保證尤其在處理該基材下側前及時把該處理流體施加到該基材上側上，且另一方面儘可能延長施加該流體的時間，使得該流體在處理該基材下側的過 程中不會自該限定區域所限定的內部空間的角落回流。比如由於該流體的表面張力而造成回流。由此不需要借助在該傳輸方向上之後設置的另一塗覆裝置來再定量該流體，尤其是該保護流體。 A device as described in claim 2 assures a simple and economical chemical treatment of the semiconductor substrate. Due to the distance A, the first coating device is disposed near the first end of the processing tank, that is, at the head of the processing tank. On the one hand, it is ensured that the treatment fluid is applied to the upper side of the substrate in a timely manner, in particular before the treatment of the underside of the substrate, and on the other hand, the time during which the fluid is applied is as long as possible, so that the fluid is treated on the underside of the substrate. Over The process does not reflow from the corner of the internal space defined by the limited area. For example, backflow due to the surface tension of the fluid. It is thus not necessary to re-quantify the fluid, in particular the protective fluid, by means of another coating device which is arranged after this transport direction.
如請求項3所述的一種裝置保證了對半導體基材的簡單而經濟的化學處理。該清潔裝置能以簡單的方式來清潔基材上側的預處理流體，尤其是預處理液。 A device as described in claim 3 assures a simple and economical chemical treatment of the semiconductor substrate. The cleaning device can clean the pretreatment fluid on the upper side of the substrate, in particular the pretreatment liquid, in a simple manner.
如請求項4所述的一種裝置以簡單的方式來保證對基材上側的清潔。該清潔裝置6尤其具有用於把該清潔流體施加到該基材上側的一塗覆噴嘴。該清潔流體尤其為一清潔液，比如水。 A device as claimed in claim 4 ensures cleaning of the upper side of the substrate in a simple manner. The cleaning device 6 has in particular a coating nozzle for applying the cleaning fluid to the upper side of the substrate. The cleaning fluid is in particular a cleaning fluid, such as water.
如請求項5所述的一種裝置以簡單的方式保證了對該半導體基材的經濟的化學處理。通過該移除裝置能借助之後設置的第一塗覆裝置以簡單的方式把該流體施加到經清潔的基材上側上。如此便能既把保護流體又把處理流體作為該流體而施加。該移除裝置比如包括一輥子，該輥子借助接觸壓力把該清潔流體從該基材上側移除。另外該移除裝置比如包括一風扇，該風扇借助一流體流，尤其是一空氣流把該清潔流體從該基材上側移除。該移除裝置優選地包括一收集池，該收集池設置在該半導體基材下方並收集被移除的清潔流體。 A device as claimed in claim 5 ensures an economical chemical treatment of the semiconductor substrate in a simple manner. By means of the removal device, the fluid can be applied to the upper side of the cleaned substrate in a simple manner by means of a first coating device which is subsequently provided. In this way, both the protective fluid and the treatment fluid can be applied as the fluid. The removal device comprises, for example, a roller that removes the cleaning fluid from the upper side of the substrate by means of contact pressure. In addition, the removal device comprises, for example, a fan which removes the cleaning fluid from the upper side of the substrate by means of a fluid stream, in particular an air stream. The removal device preferably includes a collection cell disposed below the semiconductor substrate and collecting the removed cleaning fluid.
如請求項6所述的一種裝置以簡單的方式保證了對該半導體基材的經濟的化學處理。該至少一位置測量感測器測定該相應半導體基材的傳輸位置，該傳輸位置 用於控制該第一塗覆裝置。該至少一位置測量感測器尤其設置在該清潔裝置之前，且尤其設置在該預處理裝置前，使得根據所測定的該相應半導體基材的傳輸位置來控制該清潔裝置以及該第一塗覆裝置。優選地，正好一位置測量感測器沿該傳輸方向設置，其中根據所測定傳輸位置以及傳輸速度來控制該清潔裝置和/或該第一塗覆裝置。 A device as claimed in claim 6 ensures an economical chemical treatment of the semiconductor substrate in a simple manner. The at least one position measuring sensor determines a transmission position of the corresponding semiconductor substrate, the transmission position Used to control the first coating device. The at least one position measuring sensor is arranged in particular before the cleaning device, and in particular in front of the pretreatment device, such that the cleaning device and the first coating are controlled as a function of the determined transport position of the respective semiconductor substrate Device. Preferably, exactly one position measuring sensor is arranged along the transport direction, wherein the cleaning device and/or the first coating device are controlled according to the measured transport position and the transport speed.
如請求項7所述的一種裝置以簡單的方式保證了對該半導體基材的經濟的化學處理。該控制裝置優選地是構建成可使得該第一塗覆裝置的一塗覆泵和/或該清潔裝置的一塗覆泵根據所測定傳輸位置以及傳輸速度被接通再重新斷開，使得把該流體和/或該清潔流體精確地施加到該基材上側上。 A device as claimed in claim 7 guarantees an economical chemical treatment of the semiconductor substrate in a simple manner. The control device is preferably constructed such that a coating pump of the first coating device and/or a coating pump of the cleaning device is turned on and then re-disconnected according to the measured transmission position and the transmission speed, so that The fluid and/or the cleaning fluid is precisely applied to the upper side of the substrate.
如請求項8所述的一種裝置保證了對半導體基材的簡單的化學處理。預處理池用於構成該預處理流體或者說預處理液的一液體槽，和/或用於收集被施加的從該半導體基材滴下的預處理流體。該預處理流體優選地對該半導體基材有侵蝕作用，其中通過部分地或成層地侵蝕該半導體基材來形成限定區域。優選地該預處理流體是一種液體蝕刻液。 A device as described in claim 8 assures a simple chemical treatment of the semiconductor substrate. The pretreatment tank is used to form a liquid bath of the pretreatment fluid or pretreatment liquid, and/or to collect the applied pretreatment fluid dripped from the semiconductor substrate. The pretreatment fluid preferably has an erosive effect on the semiconductor substrate, wherein the defined region is formed by etching the semiconductor substrate partially or layered. Preferably the pretreatment fluid is a liquid etchant.
如請求項9所述的一種裝置保證了對半導體基材的簡單而經濟的化學處理。通過傳輸輥輪沿著預處理池來設置並伸到該預處理池中，預處理液可以在傳輸期間如此被施加到該半導體基材上，使得形成限定區域。該半導體基材比如間接地用該預處理液來浸濕。在此該預處理 液、比如該液體蝕刻液借助該傳輸輥輪而被施加到該基材下側。該預處理液由於其表面張力而自動地運動到基材端面並浸濕它以形成環繞的限定區域。在進行直接浸濕時，該半導體基材借助傳輸輥輪靠近預處理液的一液體槽而被傳輸，如此使得基材下側直接被液體槽浸濕。由於其表面張力和/或由於彎月效應(Meniskusbildung)，預處理液可以自動地移動到基材上側的一邊緣區域。從而在基材端面以及必要時在基材上側上形成了限定區域。預處理液尤其通過其表面張力並通過由該基材表面的粗糙度而產生的毛細效應來自動地移動到基材端面並必要時移動到基材上側。在此基材表面在預處理之前是吸引預處理液的。基材表面在預處理之前尤其構造為親水的。該預處理池的長度使得在所期望的傳輸速度下來保證預處理流體或預處理液的最小作用時長。設置在該處理池上方的傳輸輥輪相應優選地延伸到該處理池中，使得在傳輸過程中把處理液施加到該半導體基材的基材下側上。 A device as claimed in claim 9 ensures a simple and economical chemical treatment of the semiconductor substrate. The transfer roller is placed along the pretreatment bath and extends into the pretreatment cell, and the pretreatment liquid can be applied to the semiconductor substrate during transport such that a defined area is formed. The semiconductor substrate is, for example, indirectly wetted with the pretreatment liquid. Pretreatment here A liquid, such as the liquid etchant, is applied to the underside of the substrate by means of the transfer roller. The pretreatment liquid automatically moves to the end face of the substrate due to its surface tension and wets it to form a surrounding defined area. In the case of direct wetting, the semiconductor substrate is transported by means of a transfer roller close to a liquid bath of the pretreatment liquid such that the underside of the substrate is directly wetted by the liquid bath. Due to its surface tension and/or due to the meniscus effect, the pretreatment liquid can be automatically moved to an edge region on the upper side of the substrate. Thereby a defined area is formed on the end face of the substrate and, if necessary, on the upper side of the substrate. The pretreatment liquid is automatically moved to the end surface of the substrate and, if necessary, to the upper side of the substrate, in particular by its surface tension and by the capillary effect produced by the roughness of the surface of the substrate. The surface of the substrate is attracted to the pretreatment liquid prior to pretreatment. The surface of the substrate is in particular constructed to be hydrophilic prior to pretreatment. The length of the pretreatment cell is such that the minimum duration of action of the pretreatment fluid or pretreatment fluid is ensured at the desired transfer rate. The transfer rolls arranged above the treatment tank are correspondingly preferably extended into the treatment tank such that the treatment liquid is applied to the underside of the substrate of the semiconductor substrate during transport.
如請求項10所述的一種裝置保證了對該半導體基材的簡單而經濟的化學處理。通過液位調節，以簡單的方式保證了該預處理液的施加。在進行間接浸濕時，該液位如此來調節，使得預處理液的液面如此低於基材下側，也即低於傳輸輥輪的高度水平面，使得傳輸輥輪任何時候都浸入到預處理液中。為此液面低於基材下側小於傳輸輥輪的直徑。優選地該液面低於基材下側1mm至30mm，較佳為5mm至25mm，且尤以10mm至20mm為更 佳。在進行直接浸濕時，該液位被調節為使得該液面低於基材下側0mm至5mm。這足以使基材端面以及必要時的基材上側浸濕該預處理液，使得形成限定區域。該預處理液的溫度尤其在5℃與25℃之間的溫度範圍中，尤其在室溫下。該預處理液尤其作為蝕刻液來構造，其具有在0.1重量%至50重量%之間，尤其在0.1重量%至5重量%之間的酸濃度範圍。用作酸的尤其是氫氟酸、硝酸、硫酸和/或過氧化磷酸。優選地該第二塗覆裝置針對收集在該處理池中的處理液具有一相應的液位。 A device as described in claim 10 assures a simple and economical chemical treatment of the semiconductor substrate. The application of the pretreatment liquid is ensured in a simple manner by level adjustment. In the case of indirect wetting, the liquid level is adjusted such that the liquid level of the pretreatment liquid is so lower than the lower side of the substrate, that is, lower than the height level of the transfer roller, so that the transfer roller is immersed at any time. In the treatment liquid. For this purpose, the liquid level is lower than the lower side of the substrate than the diameter of the transfer roller. Preferably, the liquid level is from 1 mm to 30 mm below the underside of the substrate, preferably from 5 mm to 25 mm, and especially from 10 mm to 20 mm. good. When direct wetting is performed, the liquid level is adjusted such that the liquid level is 0 mm to 5 mm below the underside of the substrate. This is sufficient to wet the pretreatment liquid on the end face of the substrate and, if necessary, the upper side of the substrate, so that a defined area is formed. The temperature of the pretreatment liquid is in particular in the temperature range between 5 ° C and 25 ° C, in particular at room temperature. The pretreatment liquid is designed in particular as an etchant having an acid concentration range between 0.1% and 50% by weight, in particular between 0.1% and 5% by weight. Especially useful as acids are hydrofluoric acid, nitric acid, sulfuric acid and/or peroxidic phosphoric acid. Preferably, the second coating device has a corresponding liquid level for the treatment liquid collected in the treatment tank.
如請求項11所述的一種裝置保證了對該半導體基材的簡單而經濟的化學處理。通過該傳輸裝置在傳輸方向上水平傳輸該相應的半導體基材。通過調節該傳輸輥輪的旋轉速度，來設定該半導體基材在傳輸方向上的傳輸速度，使得在儘可能高的傳輸速度下仍然保證了該預處理液足夠的作用時長以形成限定區域。尤其通過該旋轉速度調節裝置已精確得知該相應半導體基材的傳輸速度，使得可根據該傳輸速度以及所測定的單個傳輸位置來控制，尤其可接通以及斷開該第一塗覆裝置和/或該清潔裝置。 A device as described in claim 11 assures a simple and economical chemical treatment of the semiconductor substrate. The respective semiconductor substrate is transported horizontally in the transport direction by the transport device. By adjusting the rotational speed of the transport roller, the transport speed of the semiconductor substrate in the transport direction is set such that at the highest possible transport speed, the pretreatment liquid is still sufficiently long to form a defined area. In particular, the transmission speed of the respective semiconductor substrate is known by the rotational speed control device so that it can be controlled in accordance with the transmission speed and the measured individual transmission position, in particular the first coating device can be switched on and off. / or the cleaning device.
本發明另外還基於的任務是提供一種方法，該方法實現了對半導體基材的簡單而經濟的化學處理。 The invention is additionally based on the task of providing a method which enables a simple and economical chemical treatment of a semiconductor substrate.
該任務通過具有請求項12所述特徵的一種方法而得到解決。根據本發明的方法的優點對應於根據本發明的裝置的前述優點。根據本發明的方法尤其可借助請求項1至11的特徵而進一步形成。尤其在基材端面上和/或在 該半導體基材的基材上側生成該限定區域。在該半導體基材側面所形成的限定區域能夠被簡單地生成，並足以把流體保持於該基材上側。通過在該基材上側所生成的限定區域，該流體被有效地保持於該基材上側。該限定區域尤其在該基材上側的一邊緣區域中被形成。該邊緣區域從該半導體基材的環繞的邊緣開始小於2mm，較佳小於1.5mm，且尤以小於1mm為更佳。優選地該預處理流體對應該處理流體。由此簡化該處理流體或者說該預處理流體的提供。 This task is solved by a method having the features described in claim 12. The advantages of the method according to the invention correspond to the aforementioned advantages of the device according to the invention. The method according to the invention can be further formed in particular by means of the features of claims 1 to 11. Especially on the end faces of the substrate and/or The defined area is formed on the upper side of the substrate of the semiconductor substrate. The defined area formed on the side of the semiconductor substrate can be simply formed and is sufficient to hold the fluid on the upper side of the substrate. The fluid is effectively held on the upper side of the substrate by a defined area formed on the upper side of the substrate. The defined area is formed in particular in an edge region of the upper side of the substrate. The edge region is less than 2 mm, preferably less than 1.5 mm, and more preferably less than 1 mm from the circumferential edge of the semiconductor substrate. Preferably the pretreatment fluid corresponds to the treatment fluid. This simplifies the supply of the treatment fluid or the pretreatment fluid.
如請求項13所述的一種方法以簡單的方式保證了對該基材上側的清潔。尤其借助一塗覆噴嘴來把該清潔流體施加到該基材上側上。該清潔流體尤其為一清潔液，比如水。 A method as described in claim 13 ensures the cleaning of the upper side of the substrate in a simple manner. The cleaning fluid is applied to the upper side of the substrate, in particular by means of a coating nozzle. The cleaning fluid is in particular a cleaning fluid, such as water.
如請求項14所述的一種方法以簡單的方式保證了對該半導體基材的經濟的化學處理。通過移除該清潔流體可以以簡單的方式把該流體施加到經清潔的基材上側上。如此便能既把保護流體又把處理流體作為該流體而施加。比如借助一輥子來實施移除，該輥子借助接觸壓力把該清潔流體從該基材上側移除。另外比如借助一風扇來實施移除，該風扇借助一流體流，尤其是一空氣流把該清潔流體從該基材上側移除。被移除的清潔流體在該半導體基材下方比如借助一收集池而被收集。 A method as described in claim 14 ensures an economical chemical treatment of the semiconductor substrate in a simple manner. The fluid can be applied to the upper side of the cleaned substrate in a simple manner by removing the cleaning fluid. In this way, both the protective fluid and the treatment fluid can be applied as the fluid. The removal is carried out, for example, by means of a roller which removes the cleaning fluid from the upper side of the substrate by means of contact pressure. In addition, the removal is effected, for example, by means of a fan which removes the cleaning fluid from the upper side of the substrate by means of a fluid stream, in particular an air stream. The removed cleaning fluid is collected under the semiconductor substrate, such as by means of a collection cell.
1‧‧‧裝置 1‧‧‧ device
2‧‧‧半導體基材 2‧‧‧Semiconductor substrate
3‧‧‧傳輸方向 3‧‧‧Transmission direction
4‧‧‧傳輸裝置 4‧‧‧Transportation device
5‧‧‧預處理裝置 5‧‧‧Pretreatment device
6、10‧‧‧清潔裝置 6, 10‧‧‧ cleaning device
7‧‧‧移除裝置 7‧‧‧Removal device
8、9‧‧‧塗覆裝置 8, 9‧‧‧ coating device
11‧‧‧烘乾裝置 11‧‧‧Drying device
12‧‧‧傳輸輥輪 12‧‧‧Transport roller
13‧‧‧驅動電機 13‧‧‧Drive motor
14‧‧‧旋轉軸 14‧‧‧Rotary axis
15‧‧‧速度測量感測器 15‧‧‧Speed measurement sensor
16‧‧‧預處理池 16‧‧‧Pretreatment pool
17‧‧‧預處理流體、預處理液 17‧‧‧Pretreatment fluid, pretreatment fluid
18、41‧‧‧液位測量感測器 18, 41‧‧‧ Liquid level measuring sensor
19、30、37、42‧‧‧儲存容器 19, 30, 37, 42‧‧‧ storage containers
20、28、35、43‧‧‧管路 20, 28, 35, 43‧‧‧ pipeline
21、44‧‧‧泵 21, 44‧‧ ‧ pump
22‧‧‧控制裝置 22‧‧‧Control device
23、45‧‧‧液位調節裝置 23, 45‧‧‧ Liquid level adjusting device
24‧‧‧旋轉速度調節裝置 24‧‧‧Rotary speed adjustment device
25、34‧‧‧塗覆噴嘴 25, 34‧‧‧ coating nozzle
26‧‧‧清潔流體、清潔液 26‧‧‧ Cleaning fluid, cleaning fluid
27‧‧‧基材上側 27‧‧‧ Upper side of the substrate
29、36‧‧‧塗覆泵 29, 36‧‧‧ coating pump
31‧‧‧移除元件 31‧‧‧Remove components
32‧‧‧收集池 32‧‧‧ collection pool
33‧‧‧流體、液體、保護液、處理液 33‧‧‧ Fluid, liquid, protective fluid, treatment fluid
38‧‧‧處理流體、處理液 38‧‧‧Processing fluid, treatment fluid
39‧‧‧基材下側 39‧‧‧Under the underside of the substrate
40‧‧‧處理池 40‧‧‧Processing pool
46、47‧‧‧末端 46, 47‧‧‧ end
48‧‧‧限定區域 48‧‧‧Defined area
49‧‧‧基材端面 49‧‧‧Substrate end face
50‧‧‧內部空間 50‧‧‧Internal space
51‧‧‧位置測量感測器 51‧‧‧ position measurement sensor
A、d‧‧‧距離 A, d‧‧‧ distance
h‧‧‧液位 H‧‧‧ liquid level
L‧‧‧長度 L‧‧‧ length
S‧‧‧液面 S‧‧‧ liquid level
x0‧‧‧傳輸位置 x 0 ‧‧‧Transfer location
ω‧‧‧旋轉速度 ω‧‧‧Rotation speed
本發明的其他特徵、優點和細節參見下面的 對實施例的說明。其中：圖1示出了用於化學處理半導體基材的一種裝置，圖2示出了在該裝置的第一運行方式中預處理裝置的放大圖示，圖3示出了按照圖2的預處理裝置的俯視圖，以及圖4示出了在第二運行方式中圖2的預處理裝置的放大圖示。 Other features, advantages and details of the invention are set forth below. Description of the embodiments. 1 shows a device for chemically treating a semiconductor substrate, FIG. 2 shows an enlarged illustration of a pretreatment device in a first mode of operation of the device, and FIG. 3 shows a pre-view according to FIG. A top view of the processing device, and FIG. 4 shows an enlarged illustration of the pre-processing device of FIG. 2 in a second mode of operation.
具體實施方式 detailed description
裝置1為了水平傳輸半導體基材2而在一傳輸方向3上具有傳輸裝置4。另外裝置1包括一預處理裝置5、一第一清潔裝置6、一移除裝置7、一第一塗覆裝置8、一第二塗覆裝置9、一第二清潔裝置10和一烘乾裝置11。該預處理裝置5在該傳輸方向3上設置在該等塗覆裝置8、9之前。這些半導體基材2尤其作為半導體晶片、優選作為矽晶片來構造。 The device 1 has a transport device 4 in a transport direction 3 for the horizontal transport of the semiconductor substrate 2. In addition, the device 1 comprises a pretreatment device 5, a first cleaning device 6, a removal device 7, a first coating device 8, a second coating device 9, a second cleaning device 10 and a drying device. 11. The pretreatment device 5 is arranged in the transport direction 3 before the coating devices 8, 9. These semiconductor substrates 2 are in particular constructed as semiconductor wafers, preferably as germanium wafers.
為了傳輸半導體基材2，該傳輸裝置4具有多個傳輸輥輪12，這些傳輸輥輪從該預處理裝置5沿著該傳輸方向3直至該烘乾裝置11來設置。該傳輸輥輪12借助一電驅動電機13和未詳細示出的一傳動機構而被旋轉驅動。圍繞一相應旋轉軸14的旋轉速度ω借助一速度測量感測器15而被測量。另外為測定相應半導體基材2的傳輸位置x0而在該預處理裝置5前設置有一位置測量感測器51。 In order to transport the semiconductor substrate 2, the transport device 4 has a plurality of transport rollers 12 which are arranged from the pretreatment device 5 in the transport direction 3 up to the drying device 11. The transport roller 12 is rotationally driven by means of an electric drive motor 13 and a transmission mechanism not shown in detail. The rotational speed ω around a corresponding rotational axis 14 is measured by means of a speed measuring sensor 15. In addition, a position measuring sensor 51 is provided in front of the pretreatment device 5 for determining the transport position x 0 of the corresponding semiconductor substrate 2.
該預處理裝置5具有一預處理池16，其用於容 納一預處理流體17。該預處理流體17作為液體來構造，該液體容納於作為液體槽的預處理池16中。為了測量該預處理液17在該預處理池16中的液位h，該預處理裝置5具有一液位測量感測器18。該液位測量感測器18比如設置在該預處理池16上。 The pretreatment device 5 has a pretreatment tank 16 for Nano-pretreatment fluid 17. The pretreatment fluid 17 is constructed as a liquid which is contained in a pretreatment tank 16 as a liquid tank. In order to measure the liquid level h of the pretreatment liquid 17 in the pretreatment tank 16, the pretreatment device 5 has a liquid level measurement sensor 18. The level measurement sensor 18 is disposed, for example, on the pretreatment tank 16.
該預處理池16在該傳輸方向3上具有一長度，該長度在0.3m與1.5m之間，較佳在0.4與1.2m之間，且尤以在0.5m與0.8m之間為更佳。傳輸輥輪12在預處理池16的區域內延伸到該預處理池16中，並延伸到其中所容納的預處理液17中。為了調節液位h，該預處理裝置5具有一儲存容器19，該儲存容器通過一管路20和一泵21與該預處理池16相連。 The pretreatment tank 16 has a length in the transport direction 3 which is between 0.3 m and 1.5 m, preferably between 0.4 and 1.2 m, and more preferably between 0.5 m and 0.8 m. . The transfer roller 12 extends into the pretreatment tank 16 in the region of the pretreatment tank 16 and extends into the pretreatment liquid 17 contained therein. In order to adjust the liquid level h, the pretreatment device 5 has a storage container 19 which is connected to the pretreatment tank 16 via a line 20 and a pump 21.
在該裝置1的控制裝置22中實施一種液位調節裝置23，其與液位測量感測器18和泵21相信號連接。另外在該控制裝置22中還實施了針對該傳輸輥輪12的一旋轉速度調節裝置24，其與該速度測量感測器15和該驅動電機13相信號連接。該液位調節裝置23和該旋轉速度調節裝置24尤其是預處理裝置5的組成部分。 In the control device 22 of the device 1, a level adjustment device 23 is implemented which is in signal connection with the level measuring sensor 18 and the pump 21. In addition, a rotational speed adjusting device 24 for the transport roller 12 is also implemented in the control device 22, which is coupled to the speed measuring sensor 15 and the drive motor 13. The liquid level adjusting device 23 and the rotational speed adjusting device 24 are in particular part of the pretreatment device 5.
該第一清潔裝置6在該傳輸方向3上設置在該預處理裝置5之後且用於去除預處理液14，並用於清潔半導體基材2。該清潔裝置6具有一塗覆噴嘴25，其設置在傳輸輥輪12以及其上所傳輸的半導體基材2上方。該塗覆噴嘴25用於把一清潔流體26施加到半導體基材2上，尤其是半導體基材2的相應基材上側27上。該塗覆噴嘴25通過一 管路28和所屬的一塗覆泵29與一儲存容器30相連。該塗覆泵29與該控制裝置22相信號連接。該清潔流體26作為清潔液體來構造。優選地該清潔液26是水，尤其是蒸餾水。 The first cleaning device 6 is arranged in the transport direction 3 after the pretreatment device 5 and for removing the pretreatment liquid 14 and for cleaning the semiconductor substrate 2 . The cleaning device 6 has a coating nozzle 25 which is disposed above the transport roller 12 and the semiconductor substrate 2 transported thereon. The coating nozzle 25 is used to apply a cleaning fluid 26 to the semiconductor substrate 2, in particular to the respective substrate upper side 27 of the semiconductor substrate 2. The coating nozzle 25 passes through a The line 28 and the associated coating pump 29 are connected to a storage container 30. The coating pump 29 is signally connected to the control device 22. The cleaning fluid 26 is constructed as a cleaning liquid. Preferably the cleaning liquid 26 is water, especially distilled water.
該移除裝置7在該傳輸方向3上設置在該第一清潔裝置6之後。該移除裝置7包括設置在傳輸輥輪12上方的一移除元件31以及設置在該傳輸輥輪12下方的一收集池32。該移除元件31例如作為輥子來構造，該輥子以接觸壓力貼靠在相應半導體基材2的基材上側27，且把清潔液26自基材上側27壓入收集池32。替代地，該移除元件31例如作為風扇來構造，該風扇借助對準該基材上側27的一流體流，尤其一空氣流把清潔液26自基材上側27移除並送入收集池32。 The removal device 7 is arranged behind the first cleaning device 6 in the transport direction 3 . The removal device 7 includes a removal element 31 disposed above the transfer roller 12 and a collection basin 32 disposed below the transfer roller 12. The removal element 31 is designed, for example, as a roller which bears against the substrate upper side 27 of the respective semiconductor substrate 2 with contact pressure and presses the cleaning liquid 26 from the upper side 27 of the substrate into the collecting tank 32. Alternatively, the removal element 31 is constructed, for example, as a fan that removes the cleaning fluid 26 from the upper side 27 of the substrate and into the collection basin 32 by means of a fluid flow directed to the upper side 27 of the substrate, in particular an air stream. .
該等塗覆裝置8、9在該傳輸方向3上設置在該移除裝置7之後。該第一塗覆裝置8用於把一流體33施加到半導體基材2的相應基材上側27上。該第一塗覆裝置8具有一塗覆噴嘴34，該塗覆噴嘴設置在傳輸輥輪12以及其上所傳輸的半導體基材2上方。該塗覆噴嘴34通過一管路35和所屬的一塗覆泵36與一儲存容器37相連。該塗覆泵36與該控制裝置22相信號連接。該流體33尤其作為液體來構造。 The coating devices 8, 9 are arranged behind the removal device 7 in the transport direction 3. The first coating device 8 is used to apply a fluid 33 to the respective substrate upper side 27 of the semiconductor substrate 2. The first coating device 8 has a coating nozzle 34 which is disposed above the transport roller 12 and the semiconductor substrate 2 transported thereon. The coating nozzle 34 is connected to a storage container 37 via a line 35 and an associated coating pump 36. The coating pump 36 is signally coupled to the control device 22. This fluid 33 is constructed in particular as a liquid.
該第二塗覆裝置9用於在半導體基材2的相應基材下側39上施加一處理流體38。處理流體38作為液體來構造，其容納於處理池40中。該第二塗覆裝置9與該預處理裝置5相對應地具有一液位測量感測器41、一儲存容器42、以及一液位調節裝置45，其中該儲存容器通過一管路 43和一泵44與該處理池40相連接。關於第二塗覆裝置9的構造參見該預處理裝置5的說明。 The second coating device 9 is used to apply a treatment fluid 38 on the respective substrate underside 39 of the semiconductor substrate 2. The treatment fluid 38 is constructed as a liquid that is contained in the treatment tank 40. The second coating device 9 has a liquid level measuring sensor 41, a storage container 42, and a liquid level adjusting device 45 corresponding to the pretreatment device 5, wherein the storage container passes through a pipeline 43 and a pump 44 are coupled to the processing tank 40. Regarding the configuration of the second coating device 9, reference is made to the description of the pretreatment device 5.
該處理池40具有一第一末端46以及在該傳輸方向3上之後設置之一第二末端47，其中該處理池40在該等末端46、47之間具有一長度L。該第一塗覆裝置8，尤其是其塗覆噴嘴34設置在該處理池40上方。該噴嘴34自第一末端46起具有距離A，其條件是：0.01．LA0.3．L，較佳為0.05．LA0.25．L，且尤以0.1．LA0.2．L為更佳。 The processing cell 40 has a first end 46 and a second end 47 disposed in the transport direction 3, wherein the processing bath 40 has a length L between the ends 46, 47. The first coating device 8, in particular its coating nozzle 34, is disposed above the processing bath 40. The nozzle 34 has a distance A from the first end 46, and the condition is: 0.01. L A 0.3. L, preferably 0.05. L A 0.25. L, and especially 0.1. L A 0.2. L is better.
該第二清潔裝置10以及之後設置的烘乾裝置11在該傳輸方向3上設置在該等塗覆裝置8、9之後。 The second cleaning device 10 and the drying device 11 provided later are arranged in the transport direction 3 after the coating devices 8, 9.
在第一運行方式中該裝置1的功能如下：該預處理裝置5用於在各半導體基材2上生成一環繞的限定區域48，其中該限定區域將之後借助該第一塗覆裝置8施加的流體33或者要施加的液體限定在基材上側27上，使得該液體33被保持於基材上側27上。為此，在預處理池16中的液位h借助該液位調節裝置23被調節為使得傳輸輥輪12浸入到該預處理液17的液體池中。傳輸輥輪12在其圍繞所屬的旋轉軸14旋轉時從該液體池中攜帶出預處理液17，使得相應半導體基材2的基材下側39借助傳輸輥輪12被間接地浸濕。在預處理液17的液面S與基材下側39之間的距離d比如在5mm至10mm之間。預處理液17自動地從基材下側39移動到環繞的基材端面49。 The function of the device 1 in the first mode of operation is as follows: the pretreatment device 5 is used to create a circumferential defined area 48 on each semiconductor substrate 2, wherein the defined area will then be applied by means of the first coating device 8. The fluid 33 or the liquid to be applied is defined on the upper side 27 of the substrate such that the liquid 33 is retained on the upper side 27 of the substrate. For this purpose, the liquid level h in the pretreatment tank 16 is adjusted by means of the liquid level adjusting device 23 such that the transfer roller 12 is immersed in the liquid pool of the pretreatment liquid 17. The transfer roller 12 carries the pretreatment liquid 17 from the liquid bath as it rotates around the associated rotary axis 14 such that the underside 39 of the substrate of the respective semiconductor substrate 2 is indirectly wetted by means of the transfer roller 12 . The distance d between the liquid level S of the pretreatment liquid 17 and the underside 39 of the substrate is, for example, between 5 mm and 10 mm. The pretreatment liquid 17 is automatically moved from the underside 39 of the substrate to the circumferential end face 49 of the substrate.
該預處理液17作為蝕刻液來構造，且尤以具 有氫氟酸和/或硝酸為更佳。氫氟酸和/或硝酸的濃度在0.1重量%至50重量%之間，尤以在0.1重量%至5重量%之間為更佳。預處理液17的溫度在7℃與25℃之間，比如20℃。預處理液17的作用時長通過傳輸輥輪12的旋轉速度ω和/或預處理池16的長度來設定。 The pretreatment liquid 17 is constructed as an etching liquid, and particularly It is more preferred to have hydrofluoric acid and/or nitric acid. The concentration of hydrofluoric acid and/or nitric acid is between 0.1% and 50% by weight, more preferably between 0.1% and 5% by weight. The temperature of the pretreatment liquid 17 is between 7 ° C and 25 ° C, such as 20 ° C. The duration of action of the pretreatment liquid 17 is set by the rotational speed ω of the transport roller 12 and/or the length of the pretreatment tank 16.
通過作為蝕刻液來構造的預處理液17，在基材端面49上腐蝕掉了一吸引預處理液17的上層，使得露出了一排斥預處理液17的下層。排斥預處理液17的下層優選地構造為疏水的。通過露出該下層而自動中斷了與該預處理液17的接觸，使得蝕刻速率下降並且自動地停止蝕刻過程。通過該蝕刻過程從而在基材端面49上生成了環繞的限定區域48，其中限定區域在該基材上側27上環繞地限定了一內部空間50。 By the pretreatment liquid 17 constructed as an etching liquid, an upper layer of the pretreatment liquid 17 is etched away on the end surface 49 of the substrate, so that a lower layer of the repelling pretreatment liquid 17 is exposed. The lower layer of the rejection pretreatment liquid 17 is preferably configured to be hydrophobic. Contact with the pretreatment liquid 17 is automatically interrupted by exposing the lower layer, so that the etching rate is lowered and the etching process is automatically stopped. A circumferential defined area 48 is created on the substrate end face 49 by the etching process, wherein the defined area circumferentially defines an interior space 50 on the substrate upper side 27.
相應半導體基材2接著被傳輸到該清潔裝置6，該清潔裝置借助該塗覆噴嘴25把該清潔流體26或清潔液施加到基材上側27上。根據所測定的傳輸位置x0以及由旋轉速度ω所測定的傳輸速度把該塗覆泵29接通，接著再斷開，使得該清潔流體26僅被施加到相應基材上側27上。接著借助該移除裝置7再把該清潔流體26從相應基材上側27移除，使得預處理液17被從基材上表面或基材上側27沖洗掉。利用清潔流體26沖洗掉的預處理液17在傳輸輥輪12的下面被收集和/或排到該收集池32中。該清潔流體26如此被構造為通過限定區域48而被限定，使得該清潔流體被保持於基材上側27上。通過該限定區域48僅需要粗略地 確定清潔流體26的劑量。 The respective semiconductor substrate 2 is then transferred to the cleaning device 6 by means of which the cleaning fluid 26 or cleaning liquid is applied to the upper side 27 of the substrate. The coating pump 29 is switched on according to the measured transport position x 0 and the transport speed determined by the rotational speed ω, and then switched off, so that the cleaning fluid 26 is only applied to the respective substrate upper side 27. The cleaning fluid 26 is then removed from the respective substrate upper side 27 by means of the removal device 7 such that the pretreatment liquid 17 is rinsed away from the substrate upper surface or the substrate upper side 27. The pretreatment liquid 17 flushed away with the cleaning fluid 26 is collected and/or discharged into the collection tank 32 below the transfer roller 12. The cleaning fluid 26 is configured to be defined by defining a region 48 such that the cleaning fluid is retained on the substrate upper side 27. It is only necessary to roughly determine the dose of the cleaning fluid 26 through the defined area 48.
接著相應半導體基材2被傳輸到該等塗覆裝置8、9。借助該塗覆噴嘴34把該流體33或者液體施加到基材上側27上。為此，根據所測定的傳輸位置x0以及由旋轉速度ω所測定的傳輸速度，借助控制裝置22把該塗覆泵36接通以及斷開，使得該流體33僅被施加到相應基材上側27上。 The respective semiconductor substrate 2 is then transferred to the coating devices 8, 9. The fluid 33 or liquid is applied to the upper side 27 of the substrate by means of the coating nozzle 34. For this purpose, the coating pump 36 is switched on and off by means of the control device 22 in accordance with the measured transmission position x 0 and the transmission speed determined by the rotational speed ω, so that the fluid 33 is only applied to the upper side of the respective substrate. 27 on.
該流體33比如作為保護流體或者作為保護液來構造。通過該限定區域48來限定該保護液33，使得該保護液被保持於該基材上側27。通過該限定區域48僅需要粗略地確定保護液33的劑量。通過把該塗覆噴嘴34設置在該處理池40上方且靠近該第一末端46，一方面及時地在借助處理流體38處理該基材下側39前施加該保護液33，但另一方面又儘可能遲，使得該保護液33在處理該基材下側39的過程中完全覆蓋該基材上側27，且尤其不會自動地(比如由於表面張力)從該內部空間50的角落回流。由此不需要借助另一塗覆裝置來再定量該保護液33。該保護液33優選地作為水，尤其是蒸餾水來構造。由於該基材上側27上的保護液33，基材上側27被保護以防止通過處理液38的不期望的化學處理。通過把保護液33保持於該限定區域48中，其不會滴到處理池40中並污染或稀釋處理液38。由此避免了再定量該處理液38以保持腐蝕作用，由此降低了化學品消耗。 This fluid 33 is constructed, for example, as a protective fluid or as a protective liquid. The protective liquid 33 is defined by the defined area 48 such that the protective liquid is held on the upper side 27 of the substrate. It is only necessary to roughly determine the dose of the protective liquid 33 by the defined area 48. By placing the coating nozzle 34 above the processing bath 40 and close to the first end 46, the protective liquid 33 is applied on the one hand in a timely manner before the substrate underside 39 is treated by means of the treatment fluid 38, but on the other hand As soon as possible, the protective liquid 33 completely covers the upper side 27 of the substrate during the processing of the underside 39 of the substrate, and in particular does not automatically recirculate from the corners of the inner space 50, for example due to surface tension. This eliminates the need to re-quantify the protective liquid 33 by means of another coating device. This protective liquid 33 is preferably constructed as water, in particular distilled water. Due to the protective liquid 33 on the upper side 27 of the substrate, the upper side 27 of the substrate is protected from undesired chemical treatment by the treatment liquid 38. By holding the protective liquid 33 in the defined area 48, it does not drip into the treatment tank 40 and contaminates or dilutes the treatment liquid 38. This avoids re-quantifying the treatment liquid 38 to maintain corrosion, thereby reducing chemical consumption.
另外該流體33比如作為處理流體，尤其作為 處理液來構造。通過限定區域48來限定該處理液33，使得該處理液被保持於該基材上側27。處理液33相當於處理液38，由此處理液33的滴下完全不成問題。該處理液33優選地作為一液體蝕刻液來構造。 In addition, the fluid 33 acts as a treatment fluid, in particular as The treatment fluid is constructed. The treatment liquid 33 is defined by the defined area 48 such that the treatment liquid is held on the upper side 27 of the substrate. The treatment liquid 33 corresponds to the treatment liquid 38, and thus the dripping of the treatment liquid 33 is not a problem at all. The treatment liquid 33 is preferably constructed as a liquid etching solution.
由此該流體33視具體需求而被選為一保護流體或一處理流體，尤其是一保護液或一處理液。為此，必須把保護流體或處理流體加入儲存容器37。由此可借助該裝置1，通過簡單交換該儲存容器37所包含的流體33來實施不同的處理過程。 The fluid 33 is thus selected as a protective fluid or a treatment fluid, in particular a protective fluid or a treatment fluid, depending on the particular needs. To this end, a protective fluid or treatment fluid must be added to the storage container 37. Thereby, different processes can be carried out by means of the device 1 by simply exchanging the fluid 33 contained in the storage container 37.
該第二塗覆裝置9借助傳輸輥輪12把該處理流體38或處理液施加到基材下側39上。該處理液38作為蝕刻液來構造，並包含有氫氟酸和/或硝酸，以在基材下側39上化學處理相應半導體基材2。優選地該預處理液17和該處理液38相同地構造，使得僅須準備一種蝕刻液。該蝕刻液尤其可以在共同的儲存容器19、42中被準備。在該處理池40中的液位借助該液位測量感測器41、泵44以及該液位調節裝置45對應於預處理裝置5來調節。 The second coating device 9 applies the treatment fluid 38 or treatment liquid to the underside 39 of the substrate by means of a transfer roller 12. The treatment liquid 38 is constructed as an etchant and contains hydrofluoric acid and/or nitric acid to chemically treat the corresponding semiconductor substrate 2 on the underside 39 of the substrate. Preferably, the pretreatment liquid 17 and the treatment liquid 38 are identically constructed such that only one etching liquid has to be prepared. The etching solution can in particular be prepared in a common storage container 19, 42. The liquid level in the treatment tank 40 is adjusted by means of the liquid level measuring sensor 41, the pump 44 and the liquid level adjusting device 45 corresponding to the pretreatment device 5.
在化學處理之後，相應半導體基材2在該清潔裝置10中被清潔，並接著在該烘乾裝置11中被烘乾。相應被化學處理的半導體基材2現在提供用於進一步的處理步驟。 After the chemical treatment, the respective semiconductor substrate 2 is cleaned in the cleaning device 10 and then dried in the drying device 11. The corresponding chemically treated semiconductor substrate 2 is now provided for further processing steps.
在第二運行方式中該裝置1的功能如下：與第一運行方式不同，在該預處理池16中的液位h被調節為使得該預處理液17直接地和/或通過彎月 效應而直接浸濕相應半導體基材2的基材下側39。該液位h被調節為使得該液面S具有0mm與5mm之間的距離d。通過該液面S，基材下側39從而直接被該預處理液17浸濕。該預處理液17自動地沿著環繞的基材端面49移動到該基材上側27。在該基材上側27上該預處理液17浸濕1mm至10mm的一環繞的邊緣區域。該預處理液17腐蝕掉基材端面49上的、以及部分在基材上側27的邊緣區域中的上層，使得排斥該清潔液26及該流體33的、處於其下的下層被露出。由於這種自限制的腐蝕過程，在基材上側27上下層僅僅在最多1mm的一環繞邊緣區域中被露出，而在剩餘的邊緣區域中上層僅僅被蝕刻。基材端面49以及在基材上側27上露出的邊緣區域從而形成了環繞的限定區域48。 In the second mode of operation, the function of the device 1 is as follows: unlike the first mode of operation, the liquid level h in the pretreatment tank 16 is adjusted such that the pretreatment liquid 17 directly and/or through the meniscus The underside 39 of the substrate of the corresponding semiconductor substrate 2 is directly wetted by the effect. This liquid level h is adjusted such that the liquid level S has a distance d between 0 mm and 5 mm. By the liquid level S, the underside 39 of the substrate is directly wetted by the pretreatment liquid 17. The pretreatment liquid 17 is automatically moved along the surrounding substrate end face 49 to the substrate upper side 27. The pretreatment liquid 17 is wetted on the upper side 27 of the substrate by a surrounding edge region of 1 mm to 10 mm. The pretreatment liquid 17 erodes the upper layer on the end surface 49 of the substrate and partially in the edge region of the upper side 27 of the substrate such that the lower layer of the cleaning liquid 26 and the fluid 33 underneath is exposed. Due to this self-limiting etching process, the upper and lower layers on the upper side 27 of the substrate are exposed only in a surrounding edge region of up to 1 mm, while in the remaining edge regions the upper layer is only etched. The substrate end face 49 and the exposed edge regions on the substrate upper side 27 thereby form a circumferential defined area 48.
相應被預處理的半導體基材2接著被傳輸到第一清潔裝置6及移除裝置7，以及接著被傳輸到塗覆裝置8、9。環繞的限定區域48再次把該清潔流體26及該流體33，尤其該保護液限定在該基材上側27上。關於其他的運行方式參見第一運行方式的說明。 The respective pretreated semiconductor substrate 2 is then transferred to the first cleaning device 6 and the removal device 7, and then to the coating devices 8, 9. The surrounding defined area 48 again limits the cleaning fluid 26 and the fluid 33, in particular the protective liquid, to the upper side 27 of the substrate. See the description of the first operating mode for other operating modes.
根據本發明的裝置1和根據本發明的方法尤其適於加工太陽能電池，其被紋理化、塗層、熱擴散、離子植入和/或熱、濕化學和/或自然氧化。 The device 1 according to the invention and the method according to the invention are particularly suitable for processing solar cells, which are textured, coated, thermally diffused, ion implanted and/or thermally, wet chemically and/or naturally oxidized.
1‧‧‧裝置 1‧‧‧ device
2‧‧‧半導體基材 2‧‧‧Semiconductor substrate
3‧‧‧傳輸方向 3‧‧‧Transmission direction
4‧‧‧傳輸裝置 4‧‧‧Transportation device
5‧‧‧預處理裝置 5‧‧‧Pretreatment device
6、10‧‧‧清潔裝置 6, 10‧‧‧ cleaning device
7‧‧‧移除裝置 7‧‧‧Removal device
8、9‧‧‧塗覆裝置 8, 9‧‧‧ coating device
11‧‧‧烘乾裝置 11‧‧‧Drying device
12‧‧‧傳輸輥輪 12‧‧‧Transport roller
16‧‧‧預處理池 16‧‧‧Pretreatment pool
17‧‧‧預處理流體、預處理液 17‧‧‧Pretreatment fluid, pretreatment fluid
18、41‧‧‧液位測量感測器 18, 41‧‧‧ Liquid level measuring sensor
19、30、37、42‧‧‧儲存容器 19, 30, 37, 42‧‧‧ storage containers
20、28、35、43‧‧‧管路 20, 28, 35, 43‧‧‧ pipeline
21、44‧‧‧泵 21, 44‧‧ ‧ pump
22‧‧‧控制裝置 22‧‧‧Control device
25、34‧‧‧塗覆噴嘴 25, 34‧‧‧ coating nozzle
26‧‧‧清潔流體、清潔液 26‧‧‧ Cleaning fluid, cleaning fluid
29、36‧‧‧塗覆泵 29, 36‧‧‧ coating pump
31‧‧‧移除元件 31‧‧‧Remove components
32‧‧‧收集池 32‧‧‧ collection pool
33‧‧‧流體、液體、保護液、處理液 33‧‧‧ Fluid, liquid, protective fluid, treatment fluid
38‧‧‧處理流體、處理液 38‧‧‧Processing fluid, treatment fluid
39‧‧‧基材下側 39‧‧‧Under the underside of the substrate
40‧‧‧處理池 40‧‧‧Processing pool
46、47‧‧‧末端 46, 47‧‧‧ end
51‧‧‧位置測量感測器 51‧‧‧ position measurement sensor
A‧‧‧距離 A‧‧‧ distance
L‧‧‧長度 L‧‧‧ length
x0‧‧‧傳輸位置 x 0 ‧‧‧Transfer location
Claims (14)
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| DE102015223227.1A DE102015223227A1 (en) | 2015-11-24 | 2015-11-24 | Apparatus and method for the chemical treatment of a semiconductor substrate |
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| CN (1) | CN108292616A (en) |
| DE (1) | DE102015223227A1 (en) |
| TW (1) | TW201728374A (en) |
| WO (1) | WO2017089302A1 (en) |
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| CN112466774B (en) * | 2019-09-06 | 2023-11-17 | 泰州隆基乐叶光伏科技有限公司 | Etching equipment |
| KR102646593B1 (en) | 2021-11-25 | 2024-03-12 | 주식회사 에스이에이 | Etching device in which a housing is provided on a roller and etching process thererfor |
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| US20050020077A1 (en) * | 2003-04-18 | 2005-01-27 | Applied Materials, Inc. | Formation of protection layer by dripping DI on wafer with high rotation to prevent stain formation from H2O2/H2SO4 chemical splash |
| DE102007063202A1 (en) * | 2007-12-19 | 2009-06-25 | Gebr. Schmid Gmbh & Co. | Method and apparatus for treating silicon wafers |
| WO2011035748A1 (en) * | 2009-09-22 | 2011-03-31 | Rena Gmbh | Method and device for etching back a semiconductor layer |
| DE102009050845A1 (en) * | 2009-10-19 | 2011-04-21 | Gebr. Schmid Gmbh & Co. | Method and device for treating a substrate surface of a substrate |
| CN102214732A (en) * | 2011-04-30 | 2011-10-12 | 常州天合光能有限公司 | Water film protection wet etching process for diffusing surface |
| CN102779724A (en) * | 2011-05-11 | 2012-11-14 | 均豪精密工业股份有限公司 | Single-side etching method and single-side etching device |
| CN103618020A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Wet etching method in silicon solar cell production |
| DE102014117276A1 (en) * | 2014-11-25 | 2016-05-25 | Rena Gmbh | Method and device for the underside treatment of a substrate |
| DE102015205437A1 (en) * | 2015-03-25 | 2016-09-29 | Rct Solutions Gmbh | Apparatus and method for the chemical treatment of a semiconductor substrate |
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| CN108292616A (en) | 2018-07-17 |
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