CN102214732A - Water film protection wet etching process for diffusing surface - Google Patents
Water film protection wet etching process for diffusing surface Download PDFInfo
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- CN102214732A CN102214732A CN2011101121847A CN201110112184A CN102214732A CN 102214732 A CN102214732 A CN 102214732A CN 2011101121847 A CN2011101121847 A CN 2011101121847A CN 201110112184 A CN201110112184 A CN 201110112184A CN 102214732 A CN102214732 A CN 102214732A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention relates to a chained wet etching process during manufacturing of solar batteries, in particular to a water film protection wet etching process for a diffusing surface. The process comprises the following steps of: firstly, forming a water film protection layer on the diffusing surface of a silicon slice to be etched, wherein the water film protection layer is used for protecting the diffusing surface of the silicon slice during subsequent etching; and performing the conventional wet etching on the silicon slice floating on an etching liquid medicine. In the process, the water film protection layer is formed on the surface of the silicon slice by using surface tension of the liquid, so residual etching regions produced in the conventional wet etching process can be removed, effective light-receiving areas of a P node and an N node are increased and the photoelectric conversion efficiency can be improved; furthermore, the damage of the etching liquid medicine to the diffusing surface, which is caused by the problems of the splashing of the etching liquid medicine due to the rupture of bubbles in an etching slot, the drippage of etching liquid medicine drops coagulated above a slot body, unstable air exhaust, abnormal flow rate and the like, can be eliminated, so that the production proportion of various appearance unqualified slices to electric performance ineffective slices of the solar battery can be finally reduced.
Description
Technical field
The present invention relates to the wet-etching technology in the solar cell manufacture process, particularly a kind of diffusingsurface moisture film protection wet-etching technology.
Background technology
What RENA Inoxiside chain type wet etching machine bench used is the single face wet-etching technology, makes silicon chip floating effect that reaches etching side N type silicon on soup.But silicon chip is floating on soup, owing to liquid tension is immersed in the edge diffusing surface, must the N type silicon of diffusingsurface be impacted, and this is the unavoidable defective of wet etching.As shown in figs. 1 and 3, the level of the monolateral etched line width of RENA Inoxiside chain type wet etching machine bench may command is at 1.0mm～2.0mm at present, the etched line width is wide more, unnecessary etch areas 9 areas are big more, effective light-receiving area of battery can reduce, thereby cause short circuit current to reduce, the efficient of battery sheet reduces.
Simultaneously, RENA Inoxiside chain type wet etching machine bench is often because of bubble in the reactive tank bursts that the etching soup splashes, condense in the cell body top low, problems such as air draft is unstable, Traffic Anomaly of etching soup drop, cause the diffusingsurface soup that is etched to destroy, finally cause the various bad order sheets of solar cell, the generation of electrical property inefficacy sheet.
Summary of the invention
Technical problem to be solved by this invention is: a kind of diffusingsurface moisture film protection wet-etching technology is provided; remove the unnecessary etch areas that produces in the existing wet-etching technology, reduce the various bad order sheets of solar cell, the generation ratio of electrical property inefficacy sheet simultaneously.
The technical solution adopted for the present invention to solve the technical problems is: a kind of diffusingsurface moisture film protection wet-etching technology; at first the diffusingsurface at silicon chip to be etched forms the water membrane protective layer; this moisture film protective layer is protected the diffusingsurface of silicon chip when subsequent etching, this silicon chip swims in and carries out conventional wet etching on the etching soup then.
The method that forms the moisture film protective layer is the material loading end increase water sprinkler system at wet etching machine bench, and water sprinkler system is sprayed water at silicon chip surface, utilizes the tension force of liquid to form the water membrane protective layer at the diffusingsurface of silicon chip to be etched.
On the material loading cell body, increase drainage system.
The liquid that forms the moisture film protective layer is deionized water.
The invention has the beneficial effects as follows: the present invention utilizes the surface tension of liquid to form the moisture film protective layer at silicon chip surface; not only can remove the unnecessary etch areas that produces in the existing wet-etching technology; increase effective light-receiving area of PN junction; improve photoelectric conversion efficiency; and can eliminate because of low, the problems such as air draft is unstable, Traffic Anomaly of etching soup drop that bubble in the etching groove bursts that the etching soup splashes, condense in the cell body top; cause the diffusingsurface soup that is etched to destroy, finally reduce the various bad order sheets of solar cell, the generation ratio of electrical property inefficacy sheet.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples;
Fig. 1 is the trough body structure schematic diagram of existing wet etching machine bench;
Fig. 2 is a trough body structure schematic diagram of transforming the back wet etching machine bench of the present invention;
Fig. 3 is a diffusingsurface schematic diagram after the existing state of a control lower limb etching;
Fig. 4 is a diffusingsurface schematic diagram after the improvement state lower limb etching of the present invention;
Among the figure, 1. silicon chip, 2. guide wheel, 3. material loading cell body, 4. etching soup, 5. etching cell body, 6. water sprinkler system, 7. moisture film protective layer, 8. drainage system, 9. unnecessary etch areas.
Embodiment
A kind of diffusingsurface moisture film protection wet-etching technology; at first the diffusingsurface at silicon chip to be etched 1 forms water membrane protective layer 7; this moisture film protective layer 7 is protected the diffusingsurface of silicon chip 1 when subsequent etching, this silicon chip 1 swims on the etching soup 4 in the etching cell body 5 and carries out conventional wet etching then.The method that forms moisture film protective layer 7 is the material loading end increase water sprinkler system at wet etching machine bench; on material loading cell body 3, increase drainage system; water sprinkler system utilizes the tension force of liquid to form water membrane protective layer 7 at the diffusingsurface of silicon chip to be etched 1 at silicon chip 1 surface sprinkling.The liquid that forms moisture film protective layer 7 is deionized water.
As shown in Figure 2, silicon chip 1 is fed forward by the guide wheel in the material loading cell body 32, has increased drainage system below material loading cell body 3, has increased water sprinkler system 6 above silicon chip 1, and water unnecessary in the material loading cell body 3 is discharged by drainage system 8.
Find relatively that as Fig. 3 and 4 by this new etching technics, effective light-receiving area of silicon chip 1 diffusingsurface increases, and finally promotes photoelectric conversion efficiency, the battery outward appearance behind the plated film is more even simultaneously.
At the RENA of list, polycrystalline solar cell Inoxside chain type wet etching with go among the PSG to adopt new wet etching method of the present invention, the lifting of the verified battery efficiency that can bring and yield and the decline of isolation rate.
Claims (4)
1. a diffusingsurface moisture film is protected wet-etching technology; it is characterized in that: at first the diffusingsurface in (1) to be etched forms water membrane protective layer (7); this moisture film protective layer (7) is protected the diffusingsurface of silicon chip (1) when subsequent etching, this silicon chip (1) swims on the etching soup (4) and carries out conventional wet etching then.
2. a kind of diffusingsurface moisture film protection wet-etching technology according to claim 1; it is characterized in that: the method that forms moisture film protective layer (7) is the material loading end increase water sprinkler system (6) at wet etching machine bench; water sprinkler system (6) utilizes the tension force of liquid to form water membrane protective layer (7) at the diffusingsurface of silicon chip to be etched (1) at silicon chip (1) surface sprinkling.
3. a kind of diffusingsurface moisture film protection wet-etching technology according to claim 2 is characterized in that: shown in material loading cell body (3) go up and increase drainage system (8).
4. according to claim 1 or 2 or 3 described a kind of diffusingsurface moisture film protection wet-etching technologies, it is characterized in that: the liquid of described formation moisture film protective layer (7) is deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011101121847A CN102214732A (en) | 2011-04-30 | 2011-04-30 | Water film protection wet etching process for diffusing surface |
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| CN2011101121847A CN102214732A (en) | 2011-04-30 | 2011-04-30 | Water film protection wet etching process for diffusing surface |
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| CN102214732A true CN102214732A (en) | 2011-10-12 |
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| CN2011101121847A Pending CN102214732A (en) | 2011-04-30 | 2011-04-30 | Water film protection wet etching process for diffusing surface |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258728A (en) * | 2013-05-30 | 2013-08-21 | 英利能源（中国）有限公司 | Silicon wafer etching method and manufacturing method of solar battery piece |
| CN103579417A (en) * | 2013-11-08 | 2014-02-12 | 泰州德通电气有限公司 | Wet etching process with protective layer on diffusion face |
| CN103606518A (en) * | 2013-11-15 | 2014-02-26 | 英利集团有限公司 | A wet etching method and a wet etching apparatus |
| CN103618020A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Wet etching method in silicon solar cell production |
| CN104409390A (en) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | Silicon wafer and wet etching system |
| CN105576074A (en) * | 2014-10-08 | 2016-05-11 | 上海神舟新能源发展有限公司 | Wet etching method for N-type double-sided battery |
| CN105932113A (en) * | 2016-07-15 | 2016-09-07 | 苏州阿特斯阳光电力科技有限公司 | Wet etching method of silicon solar cell and water film solution used in wet etching method |
| CN106601831A (en) * | 2016-12-30 | 2017-04-26 | 常州亿晶光电科技有限公司 | Solar energy cell silicon chip etching water film solution and application thereof |
| WO2017089302A1 (en) * | 2015-11-24 | 2017-06-01 | Rct Solutions Gmbh | Apparatus and method for the chemical treatment of a semiconductor substrate |
| CN107075843A (en) * | 2014-11-06 | 2017-08-18 | Toto株式会社 | Water discharge device |
| CN107090595A (en) * | 2017-04-20 | 2017-08-25 | 通威太阳能（合肥）有限公司 | It is a kind of to reduce the solar cell dies etching technique of NOx emission |
| CN110289213A (en) * | 2019-05-09 | 2019-09-27 | 江苏格林保尔光伏有限公司 | A kind of lithographic method of solar battery sheet |
| CN110518088A (en) * | 2019-07-18 | 2019-11-29 | 天津爱旭太阳能科技有限公司 | A kind of preparation method of SE solar battery |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202004038U (en) * | 2011-04-19 | 2011-10-05 | 润峰电力有限公司 | Polycrystalline silicon wafer etching device with water film protection for diffusing surfaces |
-
2011
- 2011-04-30 CN CN2011101121847A patent/CN102214732A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202004038U (en) * | 2011-04-19 | 2011-10-05 | 润峰电力有限公司 | Polycrystalline silicon wafer etching device with water film protection for diffusing surfaces |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258728A (en) * | 2013-05-30 | 2013-08-21 | 英利能源（中国）有限公司 | Silicon wafer etching method and manufacturing method of solar battery piece |
| CN103618020A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | Wet etching method in silicon solar cell production |
| CN103579417A (en) * | 2013-11-08 | 2014-02-12 | 泰州德通电气有限公司 | Wet etching process with protective layer on diffusion face |
| CN103606518A (en) * | 2013-11-15 | 2014-02-26 | 英利集团有限公司 | A wet etching method and a wet etching apparatus |
| CN103606518B (en) * | 2013-11-15 | 2016-04-20 | 英利集团有限公司 | Wet etching method and Wet-method etching device |
| EP3190633A4 (en) * | 2014-10-08 | 2018-07-25 | Shanghai Shenzhou New Energy Development Co. Ltd. | Wet-etching method for n-type double-sided battery |
| CN105576074A (en) * | 2014-10-08 | 2016-05-11 | 上海神舟新能源发展有限公司 | Wet etching method for N-type double-sided battery |
| CN107075843B (en) * | 2014-11-06 | 2019-07-16 | Toto株式会社 | Water discharge device |
| CN107075843A (en) * | 2014-11-06 | 2017-08-18 | Toto株式会社 | Water discharge device |
| CN104409390A (en) * | 2014-11-12 | 2015-03-11 | 浙江晶科能源有限公司 | Silicon wafer and wet etching system |
| WO2017089302A1 (en) * | 2015-11-24 | 2017-06-01 | Rct Solutions Gmbh | Apparatus and method for the chemical treatment of a semiconductor substrate |
| CN105932113A (en) * | 2016-07-15 | 2016-09-07 | 苏州阿特斯阳光电力科技有限公司 | Wet etching method of silicon solar cell and water film solution used in wet etching method |
| CN105932113B (en) * | 2016-07-15 | 2017-08-01 | 苏州阿特斯阳光电力科技有限公司 | A kind of wet etching method of silicon solar cell and its moisture film solution used |
| CN106601831B (en) * | 2016-12-30 | 2018-02-13 | 常州亿晶光电科技有限公司 | A kind of silicon chip of solar cell etching uses moisture film solution and its application |
| CN106601831A (en) * | 2016-12-30 | 2017-04-26 | 常州亿晶光电科技有限公司 | Solar energy cell silicon chip etching water film solution and application thereof |
| EP3565008A4 (en) * | 2016-12-30 | 2020-07-15 | EGing Photovoltaic Technology Co., Ltd | Water film solution for etching silicon wafer of solar cell and use thereof |
| CN107090595A (en) * | 2017-04-20 | 2017-08-25 | 通威太阳能（合肥）有限公司 | It is a kind of to reduce the solar cell dies etching technique of NOx emission |
| CN110289213A (en) * | 2019-05-09 | 2019-09-27 | 江苏格林保尔光伏有限公司 | A kind of lithographic method of solar battery sheet |
| CN110518088A (en) * | 2019-07-18 | 2019-11-29 | 天津爱旭太阳能科技有限公司 | A kind of preparation method of SE solar battery |
| CN110518088B (en) * | 2019-07-18 | 2022-04-12 | 天津爱旭太阳能科技有限公司 | Preparation method of SE solar cell |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
| CN112309849B (en) * | 2020-09-30 | 2022-11-22 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
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Application publication date: 20111012 |