TWI239435B - Method and composition for removing sodium-containing material from microcircuit substrates - Google Patents
Method and composition for removing sodium-containing material from microcircuit substrates Download PDFInfo
- Publication number
- TWI239435B TWI239435B TW090103920A TW90103920A TWI239435B TW I239435 B TWI239435 B TW I239435B TW 090103920 A TW090103920 A TW 090103920A TW 90103920 A TW90103920 A TW 90103920A TW I239435 B TWI239435 B TW I239435B
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- patent application
- item
- scope
- stripping
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 16
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 title claims abstract description 15
- 229910052708 sodium Inorganic materials 0.000 title claims abstract description 15
- 239000011734 sodium Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 title claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 28
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims description 27
- 150000001412 amines Chemical class 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000001179 sorption measurement Methods 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- KXCVRJMSLWDHNJ-UHFFFAOYSA-N 1-(9H-fluoren-1-yl)pyrrolidin-2-one Chemical compound C1(=CC=CC=2C3=CC=CC=C3CC12)N1C(CCC1)=O KXCVRJMSLWDHNJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims 6
- ZPSJGADGUYYRKE-UHFFFAOYSA-N 2H-pyran-2-one Chemical compound O=C1C=CC=CO1 ZPSJGADGUYYRKE-UHFFFAOYSA-N 0.000 claims 1
- LDQPESOFJFZFEV-UHFFFAOYSA-N acetic acid cyclohexanamine Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.NC1CCCCC1 LDQPESOFJFZFEV-UHFFFAOYSA-N 0.000 claims 1
- RZIPTXDCNDIINL-UHFFFAOYSA-N cyclohexane-1,1,2,2-tetracarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCCC1(C(O)=O)C(O)=O RZIPTXDCNDIINL-UHFFFAOYSA-N 0.000 claims 1
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 150000004985 diamines Chemical class 0.000 claims 1
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 239000006210 lotion Substances 0.000 claims 1
- -1 dimethyl sulfene Chemical compound 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 150000003983 crown ethers Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XEZNGIUYQVAUSS-UHFFFAOYSA-N 18-crown-6 Chemical compound C1COCCOCCOCCOCCOCCO1 XEZNGIUYQVAUSS-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 229940113088 dimethylacetamide Drugs 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- CVDGNRZPDAXOQO-UHFFFAOYSA-N 1-(3-hydroxypropyl)pyrrolidin-2-one Chemical compound OCCCN1CCCC1=O CVDGNRZPDAXOQO-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- CNPURSDMOWDNOQ-UHFFFAOYSA-N 4-methoxy-7h-pyrrolo[2,3-d]pyrimidin-2-amine Chemical compound COC1=NC(N)=NC2=C1C=CN2 CNPURSDMOWDNOQ-UHFFFAOYSA-N 0.000 description 1
- XESZUVZBAMCAEJ-UHFFFAOYSA-N 4-tert-butylcatechol Chemical compound CC(C)(C)C1=CC=C(O)C(O)=C1 XESZUVZBAMCAEJ-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- DCZFGQYXRKMVFG-UHFFFAOYSA-N cyclohexane-1,4-dione Chemical compound O=C1CCC(=O)CC1 DCZFGQYXRKMVFG-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009919 sequestration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
1239435 A7 B7 五、發明説明 lJU力領域 本發明係在製造積體電路中自微電路基材移除光阻與其 他材料之領域内。 复·量技術之說明 微電子製作的整體部分係使用光阻自護罩或網上轉移影 像土所需電路層。完成必要影像轉移後剝除光阻而後進行 其次某些程序步騾。 文活動離子特別經鈉離子沾污、尤其在高溫作業期間斜 向預燒試驗中為積體電路許多不合格之起因。積體電路製 作期間可於多項階段内引進活動離子污染。 有關積體電路技藝的發展不斷尋求減少活動離子污染之 材料與技術。美國專利5,417,802號中用冠狀醚類以多價螯 合於有機溶劑内供移除光阻用之I族及11族離子。 發明之概要 根據本發明提供剝除含鈉物質如光阻的方法及組成物。 剥除組成物包括在有機溶劑内之丨,2 _二胺基環己烷四羧酸 (C YDTA )。本發明方法包括用該剥除組成物接觸該基 材。 發明的詳細說明 光阻移除及金屬蝕刻後清潔用有機溶劑為活動離子污染 《普通來源。典型溶劑包含伯胺、仲胺與其他溶劑諸如二 甲亞颯及二甲基乙醯胺的摻混物。此等溶劑常貯在塑膠(例 如高密度聚丙缔)容器中ϋ此等塑膠容器涉及使用其
1239435 A7 B7 五、發明説明(2 ) 中可能含鈉的無機觸媒。因此當溶劑儲於此等塑膠容器内 時納能浸提入溶劑。溶劑中鋼濃度隨接觸塑膠期間增加。 頃發現1,2 -二胺基環己烷四羧酸(CYDTA )與鈉離子適當 螯合,抑制鈉吸附於積體電路表面。在移除光阻或金屬蝕 刻後清潔習用之有機溶劑内添加1,2 -二胺基環己烷四羧酸 經發現所得潔淨後積體電路表面上測出的鈉濃度大為減 少 〇 用氮化鈦沈積於矽基底上並以輔助的離子質譜術(SIMS ) 檢查之實驗指出添加1,2 -二胺基環己烷四羧酸於習用的有 機溶劑配方諸如 NJ,Phillipsburg,Mallinckrodt Baker Incorporated之註冊商標ALEG-3 10®等,大幅降低此等基材 的表面鈉濃度。與前述冠狀醚類平行處理之直接比較證明 本發明在所得潔淨表面上結果鈉濃度低得多。 於一典型應用中,可使用經1,2 -二胺基環己烷四羧酸改 良之有機溶劑自蝕刻之氧化物、金屬或半導體基材圖樣中 移除有花樣的光阻,藉以減低所得積體電路之鈉污染程 度。或者,光阻可藉曝露於氧電漿部分移除光阻,再用本 發明移除所得不必要之餘留物。 一具體例利用一剥除溶劑、一親質子性胺、一不含氮的 弱酸,其量足以部分中和此親質子性胺俾此剝除組成物當 以約1 0份水稀釋時有約9.6至約10.9之水液pH,該弱酸的 水溶液有2.0或較高p K值及低於140之當量及1,2-二胺基環 己烷四羧酸,因而該剝除組合物能在極少增加洗淨積體電 路的表面鈉濃度下剥除無用之光阻或光阻殘餘物。 -5- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 1239435 A7 ____ B7 五、發明説明( ) 3 本發明中可用的不含氮弱酸包括有機酸如羧酸類或紛類 及無機酸如碳酸或氫氟酸之鹽類。 所謂弱酸係指水溶液内離解常數具有強度以” p K ”表示 至少2.0以上,較佳2.5或更高。特別適用pK > 2.0之弱 紅’宜有當量小於約140。可提及作為本發明中可用的不 含氮弱酸實例如羧酸類諸如醋酸、酞酸、苯氧基醋酸及其 類似物,有機酸類諸如2 -巯基苯甲酸、2 -巯基乙醇及其類 似物,一般pK在9-10範圍中之酚類如苯酚、1,3,5-三經基 苯、連苯三酚、間苯二酚、4 -特丁基苯鄰二酚及其類似 物’及無機酸類如碳酸、氫氟酸及其類似物。本發明剥除 組成物中弱酸用量為該組成物重量之約0.05%至約2 5 %, 含量將中和剥除組成物内所存約1 9 %至約7 5 %重量的胺, 因而得該剝除組成物之含水沖洗pH自約9.6至約10.9。 本發明中可用的鹼性剥除組成物亦涵蓋廣範圍結構型。 其離析常數仍以pK值表示,範圍自β -氧或-氮代胺類之約 9至1 1以迄仲胺、嗎啉與羥胺類的8 · 3及某些更低ρ κ值之 羥胺衍生物。可提及之可用的鹼性組份有親核胺類,較佳 例如1-胺基-2-丙醇,2-(2 -胺乙氧)基乙醇,2 -胺基乙 醇’ 2-(2 -胺基乙胺基)乙醇,2-(2 -胺乙基胺基)乙胺及其 類似物。比胺之實際p K值更重要者為其親質子性應高。 本發明剝除組成物中胺組份用量為該組成物重量的約1 % 至約5 0 %。 相信此等鹼性剥除組份與本發明所用弱酸範圍之相互作 用基本上係可逆的: -6- 1239435 A7 B7 五、發明説明(4 ) 驗性組份+酸=鹽狀之複合物。 由於此反應的可逆性、縱使自化學計算觀點言多量鹼性 、’且伤已、,二中和、剥除程序期間仍保留實質濃度之驗性組 份。如此可證即使有此等酸類存在亦察見剝除速度奇快。 本發明的光阻剥除組成物含一有機溶劑系統。此有機溶 劑系統具有溶解度參數自約8至約15,得自三項Hansen溶 解度參數(分散的、極性與氫鍵)平方總和之平方根。此溶 劑系統可由任何多數單獨溶劑或幾種不同溶劑的混合物組 合。可提述之此項溶劑實例有多種吡咯烷酮化合物諸如2_ 吡各烷酮,1 -甲· 2 -吡咯烷酮,丨·乙_ 2 _吡咯烷酮,卜丙_ 2-吡咯烷酮,丨_羥乙基-2-吡咯烷酮,丨_羥丙基比咯烷 酮及其類似物;二甘醇-烷基醚諸如具h〇CH2CH2_〇_ CH2CHr 0-R式其中R係一 1-4碳原子的烷基團者,含二氧 化硫之化合物諸如 〇
II
Rl—S—R2 » 〇 式的二烷基亞颯(DMSO),其中r% R2係丨·4碳原子之烷 基;
〇 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) A7 B7 1239435 五、發明説明(c ) 5 式的四氫喧吩-1,1-二氧化物,其中R3係氫,甲基或乙基, ‘者如一氧p塞吩、甲基一氧喧吩及乙基二氧ϊτ塞吩,與聚乙二 醇一甲基乙醯胺或一甲基甲酿胺。本發明剝除組合物之 溶劑系統部分通常佔組成物重量約5 〇 %至約9 8 %,較佳約 重量8 5 %至約9 8 %。 較佳▲劑為N-燒基-2 -外1^各垸酮,諸如n -甲基·,n、乙 基-,N-丙基.與N-(2_羥乙基卜,二甲亞砜,二甲基乙醯 胺及二甲基甲醯胺。 特佳4劑為N -甲基-2 - p比嘻垸酮與四氫喧吩_ 1,1 _二氧化 物。 實例 种量1 0 0 〇公克的剥除溶劑入一氟聚合物杯,含約5 〇份 N-曱基-2-吡咯烷酮,約10份四氫噻吩·丨,^二氧化物, 約2 5份2 -胺基乙醇,約5份丨,2 _二羥苯與約丨〇份水。秤出 添加劑1,2 -二胺基環己烷四羧酸或1 8 •冠狀醚_ 6,視需要 /谷於刎除落劑。升高溶液至所須溫度,放置一氮化鈦(丁iN) 包覆的晶片於溶液中歷2〇分鐘,取出以Di水沖洗並用 SIMS分析。全部實驗在一丨〇 〇級潔淨室内完成,特別慎防 晶片之鋼污染。 三塊晶片接受水沖洗與乾燥步驟僅為建立底線鈉值而不 作任何釗除溶劑處理。在6 5 t與8 5 °C測試未修飾之剝除 幺片]歷20刀鐘以決定此法在丁 iN表面上餘留的相對納量。 結果表現於表i。第二組實驗内加〇1重量%之水合丨,八二 胺基環己燒四羧酸(CYDTA)於剥除溶劑。第三組實驗中
1239435 A7 B7 五、發明説明(Λ ) 6 水合1,2 -二胺基環己烷四羧酸重量%增至0 · 5 %。第四組 實驗内提高水合1,2 -二胺基環己烷四羧酸的重量百分比至 0.9%。第五組中加0.1重量%之1 8 -冠狀醚-6於剝除溶劑, 在4 5 °C,6 5 °C及8 5 °C下試驗。 此等數據(表1 )顯然證明添加1,2 -二胺基環己烷四羧酸 於剝除溶劑結果表面納濃度比未修飾的溶劑内降低很多。 添加冠狀醚效果無益。 表1 製程 虛理溫/ire) 相對表面鈉濃/ti用SIMS) 水漂與乾燥 (未處理) 0.0052, 0.0046, 0.0051 僅剥除溶劑 65〇C 0.16 85〇C 0.25 溶劑+0.1%CYDTA 65t 0.04 85〇C 0.07 溶劑 + 0.5% CYDTA 65〇C 0.02 85〇C 0.05 溶劑 + 0.9% CYDTA 65〇C 0.03 85〇C 0.04 溶劑+ 0.1% 18-冠狀醚-6 45〇C 0.33 65〇C 0.41 85〇C 0.45 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
Claims (1)
- AS B8 C8 1239435 申請專利範圍 •二,在以含有機溶劑之組成物行光阻移除或金屬蝕刻後 清潔期間抑制鈉吸附至積體電路表面之方法,其包括使 琢表面與含有機溶劑之組成物接觸,該組成物包括: a)丨,2 -二胺基環己院四酷酸(CYDTA), b )親質子性胺,其以組成物重量計約丨至約5 q %之 存在, c )不含氮的弱酸,其量足以部分中和此親質子性胺俾此 剝除組成物當以約1 0份水稀釋時有約9 · 6至約 1 〇 · 9之水性p Η,該弱酸在水溶液内有2 〇或更高 的Ρ Κ值及小於1 4 0之當量值,及 ^ d)落劑,其係一剥除溶劑系統,其具有自約8至約^ $ 的落解度參數,含量為以組成物重量計自約5 〇 %至 約9 8% 2·,據=請專利範圍第丨項之方法,其中剝除組成物内弱 酸含量為以該剥除组成物重量計的約〇 〇5%至約2 5 %。 3·根據申請專利範圍第2項之方法’其中弱酸有2.5或更高 的PK。 4. 根據申請專利範圍第3項之方法,其中弱酸2 冬。 5. 根據中請專利範圍第4項之方法,#中親質子性胺為2_ 胺基乙醇。 6·根據申請專利範圍第5項之方法,其中溶劑系統包括為 Ν-甲基-2-吡咯烷酮與四氫嘍吩—^-二氧化物,可視情 况多達約1 〇 %的水。 7.根據申請專利範圍第i項之方法,其以重量基計包括: 自約50%至約98%的心甲基·2κ坡酮,自約1%至 -10-1239435 C8约2 0。/〇之四氫喧吩-i,i ·二氧化物,自約1 %至約2 〇。/〇的 水’自約1 %至約5 0 %之2 -胺基乙醇,自約0.05 %至約 25°/〇之1,2-二羥苯’及約〇·〇1%至二胺基環己 烷四幾酸。 8 · 一種在以含有機溶劑之組成物行光阻移除或金屬蝕刻後 清潔期間抑制鈉吸附至積體電路表面之組成物,該含有 機溶劑之組成物包括: a) 1,2-二胺基環己燒四醋酸(cydtA), b )親質子性胺,其以組成物重量計約1至約5 〇 %之量 存在, c )不含氮的弱酸,其量足以部分中和此親質子性胺俾此 剥除組成物當以約1 〇份水稀釋時有約9.6至約 1 〇 · 9之水性p Η ’該弱酸在水溶液内有2 · 〇或更高 的Ρ Κ值及小於1 4 0之當量值,及 d)洛劑,其係一剝除溶劑系統,其具有自約8至約1 5 的i解度參數,含量為以組成物重量計自約5 0 %至 約9 8% 9·根據申請專利範圍第8項之組成物,其中剥除組成物内 Θ故含I為以該剥除組成物重量計的約0.05%至約 2 5〇/〇。 * .根據申凊專利範圍第9項之組成物,其中弱酸有2 · 5或更 高的ρ K。 U·根據申請專利範圍第1 〇項之組成物,其中弱酸係1,2 -二 羥苯。 ’ 12·根據申請專利範圍第1 1項之組成物,其中親質子性胺為 -11 - 8 8 8 8 A BCD 1239435 ~—·~____ 六、申請專利範圍 胺基乙醇。 13.根據中請專利範圍第12項之組成物,其中溶劑系統包括 為N_曱基_2_吡咯烷酮與四氫。塞吩“,丨-二氧化物,可視 情沉多達約1 〇 %的水。 κ根據申請專利範圍第8項之組成物,其以重量基計包 括.自約5 0 %至約9 8 %的N -甲基-2 - p比咯燒酮,自約 1 %至約2 0 %之四氫嘍吩-丨,丨_二氧化物,自約1 %至約 2 0 0/〇的水,自約1 %至約5 〇 %之2 -胺基乙醇,自約 0.05%至約25%之1,2_二羥苯,及約0.01%至5%之1,2-二胺基環己烷四羧酸。 -12- i纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 12394% . 申請曰期 9 〇、叫 十 —--— 案 號 090103920 類 別 ^〇yfY^( €ί^Υτ〇 C4 煩 請 委 員 明 f|專利説明書 -、雲!名稱 中 文 用於自微電路基材移除含鋼物質之方法及組成物 英 文 ME 1 HOD AND COMPusn iON FOR REMOVING SODIUM-CONTAINING MATERIAL FROM MICROCIRCUIT SUBSTRATES" 公修正後是否!.!♦;質内容< 姓 名 國 籍 喬治史瓦姿庫夫 GEORGE SCHWARTZKOPF 美國 發明 創作> 住、居所 姓 义(名稱) 國 籍 美國紐澤西州華盛頓市富蘭克林鎮比寇路97號 美商瑪琳I特公司 MALLINCKRODT INC. 美國 裝 線 三、申請人 f事務ία 名 美國密蘇里州聖路易市麥克當勞大道675號 傑佛瑞S.波恩 JEFFREY S. BOONE
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19007100P | 2000-03-20 | 2000-03-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI239435B true TWI239435B (en) | 2005-09-11 |
Family
ID=22699906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090103920A TWI239435B (en) | 2000-03-20 | 2001-02-21 | Method and composition for removing sodium-containing material from microcircuit substrates |
Country Status (15)
Country | Link |
---|---|
EP (1) | EP1307786B1 (zh) |
JP (1) | JP4671575B2 (zh) |
KR (1) | KR100876067B1 (zh) |
CN (1) | CN1230718C (zh) |
AT (1) | ATE467154T1 (zh) |
AU (1) | AU2001245861A1 (zh) |
CA (1) | CA2403730C (zh) |
DE (1) | DE60142054D1 (zh) |
ES (1) | ES2345872T3 (zh) |
IL (2) | IL151792A0 (zh) |
MY (1) | MY129673A (zh) |
NZ (1) | NZ522079A (zh) |
PL (1) | PL195792B1 (zh) |
TW (1) | TWI239435B (zh) |
WO (1) | WO2001071429A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6326130B1 (en) | 1993-10-07 | 2001-12-04 | Mallinckrodt Baker, Inc. | Photoresist strippers containing reducing agents to reduce metal corrosion |
AU2003240827A1 (en) * | 2002-06-07 | 2003-12-22 | Mallinckrodt Baker Inc. | Cleaning compositions for microelectronic substrates |
US7833957B2 (en) | 2002-08-22 | 2010-11-16 | Daikin Industries, Ltd. | Removing solution |
JP4005092B2 (ja) * | 2004-08-20 | 2007-11-07 | 東京応化工業株式会社 | 洗浄除去用溶剤 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5417802A (en) | 1994-03-18 | 1995-05-23 | At&T Corp. | Integrated circuit manufacturing |
JPH10171130A (ja) * | 1996-12-10 | 1998-06-26 | Fuji Film Oorin Kk | フォトレジスト剥離液 |
WO1999060448A1 (en) | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
-
2001
- 2001-02-08 MY MYPI20010558A patent/MY129673A/en unknown
- 2001-02-21 TW TW090103920A patent/TWI239435B/zh not_active IP Right Cessation
- 2001-03-19 ES ES01918830T patent/ES2345872T3/es not_active Expired - Lifetime
- 2001-03-19 NZ NZ522079A patent/NZ522079A/en not_active IP Right Cessation
- 2001-03-19 EP EP01918830A patent/EP1307786B1/en not_active Expired - Lifetime
- 2001-03-19 DE DE60142054T patent/DE60142054D1/de not_active Expired - Lifetime
- 2001-03-19 AT AT01918830T patent/ATE467154T1/de active
- 2001-03-19 PL PL01357383A patent/PL195792B1/pl not_active IP Right Cessation
- 2001-03-19 AU AU2001245861A patent/AU2001245861A1/en not_active Abandoned
- 2001-03-19 CA CA002403730A patent/CA2403730C/en not_active Expired - Fee Related
- 2001-03-19 CN CNB018067050A patent/CN1230718C/zh not_active Expired - Fee Related
- 2001-03-19 JP JP2001569560A patent/JP4671575B2/ja not_active Expired - Fee Related
- 2001-03-19 KR KR1020027012303A patent/KR100876067B1/ko not_active IP Right Cessation
- 2001-03-19 WO PCT/US2001/008772 patent/WO2001071429A1/en active IP Right Grant
- 2001-03-19 IL IL15179201A patent/IL151792A0/xx active IP Right Grant
-
2002
- 2002-09-17 IL IL151792A patent/IL151792A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MY129673A (en) | 2007-04-30 |
KR100876067B1 (ko) | 2008-12-26 |
KR20030051416A (ko) | 2003-06-25 |
ES2345872T3 (es) | 2010-10-05 |
CA2403730A1 (en) | 2001-09-27 |
JP2003528353A (ja) | 2003-09-24 |
AU2001245861A1 (en) | 2001-10-03 |
DE60142054D1 (de) | 2010-06-17 |
EP1307786B1 (en) | 2010-05-05 |
IL151792A (en) | 2006-07-05 |
NZ522079A (en) | 2004-06-25 |
CN1418330A (zh) | 2003-05-14 |
IL151792A0 (en) | 2003-04-10 |
PL195792B1 (pl) | 2007-10-31 |
ATE467154T1 (de) | 2010-05-15 |
CN1230718C (zh) | 2005-12-07 |
JP4671575B2 (ja) | 2011-04-20 |
CA2403730C (en) | 2009-09-08 |
WO2001071429A1 (en) | 2001-09-27 |
PL357383A1 (en) | 2004-07-26 |
EP1307786A1 (en) | 2003-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI300885B (en) | Aqueous stripping and cleaning composition | |
EP1808480B1 (en) | pH buffered aqueous cleaning composition and method for removing photoresist residue | |
KR100786610B1 (ko) | 플루오라이드를 포함하는 수계 잔류물 제거제 | |
US7807613B2 (en) | Aqueous buffered fluoride-containing etch residue removers and cleaners | |
KR101778313B1 (ko) | 레지스트 박리 조성물 및 전기 디바이스의 제조 방법 | |
WO2008125002A1 (fr) | Composition nettoyante destinée à retirer une couche de réserve épaisse | |
KR100360985B1 (ko) | 레지스트 스트리퍼 조성물 | |
US7682458B2 (en) | Aqueous based residue removers comprising fluoride | |
WO2008071077A1 (fr) | Composé nettoyant pour éliminer un photorésist | |
US20070078074A1 (en) | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials | |
TWI688639B (zh) | 用於自基板除去物質之組合物 | |
TWI239435B (en) | Method and composition for removing sodium-containing material from microcircuit substrates | |
JP4667147B2 (ja) | 基板洗浄液 | |
US7015183B2 (en) | Resist remover composition | |
KR100518714B1 (ko) | 레지스트 박리액 조성물 | |
JP2008027984A (ja) | 基板洗浄液 | |
US6899818B2 (en) | Method and composition for removing sodium-containing material from microcircuit substrates | |
KR20140044482A (ko) | 전자소자용 세정액 조성물 | |
JP2002196510A (ja) | レジスト用剥離液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |