TWI237668B - ZnS-SiO2 sputtering target and optical recording medium having ZnS-SiO2 phase-change type optical disc protective film formed through use of that target - Google Patents

ZnS-SiO2 sputtering target and optical recording medium having ZnS-SiO2 phase-change type optical disc protective film formed through use of that target Download PDF

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TWI237668B
TWI237668B TW091103902A TW91103902A TWI237668B TW I237668 B TWI237668 B TW I237668B TW 091103902 A TW091103902 A TW 091103902A TW 91103902 A TW91103902 A TW 91103902A TW I237668 B TWI237668 B TW I237668B
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zns
target
sputtering target
powder
sio2
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TW091103902A
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Yahagi Masataka
Takami Hideo
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Nikko Materials Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25716—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing sulfur
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Description

A7 1237668 ___B7____ 五、發明說明（/ ) 【發明所屬之技術領域】 本發明係關於一種ZnS-SK)2濺鍍靶及使用該濺鑛靶來 形成ZnS-SK^相變型光碟保護膜之光記錄媒體，在濺鍍成 膜時能夠減低濺鍍時所產生之粒子（發塵）或結球，且能 減少高密度下之品質不均而提高量產性，特別是適用在 ZnS-SK)2相變型光碟保護膜之形成上。 【背景技術】 近年來，已開發出不需要磁頭而能夠進行記錄及再生 之高密度記錄光碟，對其關心的程度正急速昇高。該光碟 係分成爲再生專用型、可寫入一次型和可重複寫入型3種 ，但是，特別是在可寫入一次型或可重複寫入型所使用之 相變方式係受到注目。以下，簡單地說明使用該相變型光 碟之記錄及再生之原理。 相變型光碟係藉由雷射光之照射，來加熱基板上之記 錄薄膜使其升溫，使該記錄薄膜之構造產生結晶學上之相 變化（非晶質<=>結晶），來進行資訊之記錄及再生；具體 而言，係檢測起因於該相間之光學常數變化所造成之反射 率變化，來進行資訊再生。 前述相變化係藉由直徑縮聚至1〜數//m左右之雷射 光之照射而進行。在該情形下，例如Ι/zm之雷射光束以 10m/s之線速度來通過時，光照射在光碟某點上之時間係 10〇ns，因此’必須在該時間內，進行前述相變化和反射率 之檢測。 (請先閱讀背面之注意事項再填寫本頁) --------訂---------線 »· _______3_ A7 1237668 五、發明說明（y) (請先閱讀背面之注意事項再填寫本頁) 此外，關於前述結晶學上之相變化、也就是非晶質和 結晶間之相變化的實現，熔融和急冷不僅反覆地施加在光 碟之相變化記錄層上，也反覆地施加在周邊之介電質保護 層或鋁合金之反射膜上。 因此，相變光碟係成爲用ZnS-SiCb系高熔點介電質之 保護層來夾住Ge-Sb-Te系等之記錄薄膜層之兩側、並設置 銘合金反射膜之四層構造。 其中，反射層和保護層除了要求反射率差異大之光學 功能（增大非晶質部和結晶部間之吸收）以外，並要求記 錄薄膜之耐濕性和熱變形之防止功能，以及在記錄時之熱 條件控制功能（參照雜誌「光學」26卷1號第9〜15頁） 〇 如此般，高熔點介電質之保護層必須承受升溫和冷卻 所產生之熱反複應力，且使這些熱影響不會及於反射膜或 其他部位，且其本身必須爲薄、低反射率及具有不變質之 強韌性。這代表著介電質保護層具有重要之功能。 前述介電質保護層一般係藉由濺鍍法來形成。該濺鍍法係 使用以下之原理：使正電極和負電極所構成之靶呈對向， 在惰性氣體之環境氣氛下，於基板和靶之間施加高電壓而 產生電場，此時，電離之電子和惰性氣體發生撞擊，形成 電漿，該電漿中之陽離子係撞擊靶（負電極）表面，擊出 耙構成原子，該飛出之原子係附著在對向之基板表面上， 來形成膜。 向來，由於前述保護層係要求在可見光區域之透過性 4 ΐ紙國家標準（CNS)A4規格（210 X 297公釐） A7 1237668 ____ Β7__ 五、發明說明（、） 和耐熱性等，因此，使用ZnS-Si〇2等之陶瓷靶，進行濺鍍 ，形成1000〜2000A左右之薄膜。 (請先閱讀背面之注意事項再填寫本頁) 這些材料係使用高頻灑鍍（RF)裝置、磁控濺鍍裝置 或者是對靶材料施加特殊處理而使用DC (直流）濺鍍裝置 ，進行成膜。 已知藉由使得ZnS-SiCh靶之結晶粒微細化、且高密度 化，可使得靶之濺鑛面成爲均一且平滑，能減低粒子和結 球並使靶壽命變長。結果可使光碟之生產性提高。 但是，以往使用在ZnS-Si〇2靶上之Si〇2，係使用4N 以上之高純度且平均粒徑0.1〜20//m者，一般係在800〜 1200°C間進行燒結來製造，但是，在此種溫度範圍，Si〇2 本身之變形等不會發生，也不發生與ZnS間之反應。
因此，如此所製造之ZnS-Si〇2靶，係容易在ZnS和 Si〇2間發生空隙，SW2越微細則該現象越顯著，使得ZnS 之緻密化也受到阻礙，因此，會有靶密度降低之問題發生 〇 若靶密度降低，則機械強度降低，也有在濺鍍中出現 裂縫之問題發生。根於此，日本專利特開平9-143703號中 提案出，爲提高燒結性而添加氧化鋁（alumina) 10〜 lOOOppm來增加強度。但是，添加氧化鋁會有不容易提昇 靶密度之問題發生。 因此，以往爲了達成高密度化，必須將熱壓等之製造 條件設成更高溫、高面壓。然而，例如在藉由熱壓法來進 行製造的情形下，溫度越高則1製程所需之時間也變得越 國家標準（CNS)l4規格（210 X 297公釐） 一 1237668 μ __B7___ 五、發明說明（) (請先閱讀背面之注意事項再填寫本頁) 長，並且，面壓越高，爲保持石墨模強度，則必須增大外 圍之壁厚，縮小負荷面積部分，結果，會使熱壓之每一批 之生產量顯著減少。 相反地，爲了不使生產量減少，雖可增大熱壓裝置， 或將石墨模本身做大，但是，會使熱壓裝置或石墨模等之 成本上升。 因此，以往無法以低成本來得到高密度之ZnS_Si〇2系 相變型光碟保護膜用濺鍍靶。 因此，一般不得不使用低密度靶，結果，在藉由濺鑛 來成膜時，發生在濺鑛時之所產生之粒子（發塵）或結球 ，所以，會有成膜之均一性及品質降低、生產性也變差之 問題發生。 【發明之揭示】 本發明之目的，係提供一光碟保護膜形成用濺鑛靶， 及使用該濺鍍靶來形成ZnS-SK)2相變型光碟保護膜之光記 錄媒體，其能夠穩定且低成本地製造結晶粒微細之90%以 上之高密度靶，進一步能提高成膜均一性且提升生產效率 〇 爲了解決前述課題，因此，發明者深入進行硏究結果 認知到，藉由使用在Si〇2加入添加物而成之Si〇2系玻璃材 料，可減低與ZnS間之空隙，即使進行微細化也容易達成 高密度化，而不會損害作爲保護膜之特性，並且，能夠減 低在濺鍍時之所產生之粒子或結球，而提高成膜之均一性 __6_ 本紙國家標準（CNS)A4規格mo X 297公釐） 1237668 A7 -----------B7____ 五、發明說明（Γ) Ο 本發明係根據該認知，而提供： 1·一種相對密度90%以上ZnS-Si〇2濺鍍靶，其特徵在 於··使用將SK)2系玻璃粉末（將添加物之擇自金屬元素、 硼、磷、砷或其等的氧化物之一種以上以總量0.01〜20wt %來含有）1〜50m〇l%和殘餘之ZnS粉末經均一分散混合 而成之粉，進行燒結而得。 2·—種相對密度90%以上ZnS-Si〇2濺鍍靶，其特徵在 於：使用將SK)2系玻璃粉末（將添加物之擇自金屬元素、 硼、磷、砷或其等的氧化物之一種以上以總量0.01〜20wt °/〇來含有）1〜50mol%、Si〇2粉末0.01〜30mol%和殘餘之 ZnS粉末經均一分散混合而成之粉，進行燒結而得。 3. 如前述1或2之ZnS-Si〇2濺鍍靶，其中，金屬元素 係鋰、鈉、鎂、鋁、鉀、鈣或鋇。 4. 如前述1〜3中之任一 ZnS-Si〇2濺鍍靶，其中，Si〇2 部之結晶粒之平均粒徑係0.1〜30// m。 5. —種使用ZnS-Si〇2濺鑛靶來形成ZnS-Si〇2相變型光 碟保護膜之光記錄媒體，其特徵在於：係使用前述1〜4中 之任一 ZnS-Si〇2濺镀靶。 【圖式之簡單說明】 圖1係藉由實施例1所得到之靶表面之顯微鏡相片。 圖2係藉由實施例2所得到之靶表面之顯微鏡相片。 圖3係藉由比較例1所得到之靶表面之顯微鏡相片。 _7_______ 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁)
--------訂--------- » A7 1237668 五、發明說明（t ) 【發明之實施形態】 本發明所使用之SiCb系玻璃粉末，係將作爲添加物之 擇自金屬元素、硼、磷、砷或其等的氧化物中之一種以上 以總量0.01〜20wt%來含有。該金屬元素，最好爲鋰、鈉 、鎂、鋁、鉀、鈣、鋇和鉛。使用如此般之Si〇2系玻璃材 料係本發明之一大特徵。 在添加量未滿0.01 wt%，並無添加之效果，在超過20 wt%時，膜特性大幅改變並不佳，因此，總量取0.01〜 20wt%。 在靶之製造時，將上述含有添加元素之SK)2系玻璃粉 末1〜50m〇l%和殘餘之ZnS粉末均一分散混合，藉由熱壓 等進行燒結。 此外，可在前述Si〇2系玻璃粉末添加SK)2粉0.01〜 30mol%，將其等和殘餘之ZnS粉末均一混合及分散，藉由 熱壓等進行燒結。藉由該SiCh粉之添加，可配合使用目的 來減低前述金屬元素等之添加量，又即使Si〇2之組成量多 ，也可以成爲高密度化。此外，任何一種之添加材料最好 爲高純度，例如使用99.99重量％以上者，但是，不一定 限制在該範圍內。 據此，則能夠得到ZnS和Si〇2間之空隙少且相對密度 90%以上之ZnS-SiCh相變型光碟保護膜形成用濺鍍靶。 由於藉由添加前述材料可使得ZnS-Si〇2系靶之結晶粒微細 化且成爲高密度化，因此，能使靶之濺鍍面成爲均一且平 滑、減少在濺鑛時之粒子或結球以及使得靶壽命變長，而 — 8 本$、張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " · 017379 (請先閱讀背面之注意事項再填寫本頁)
---I I I I I 訂----I---- _ A7 1237668 __B7 ___ 五、發明說明（〇 ) 具有顯著效果。結果，可以提高形成有ZnS_Sl02相變型光 碟保護膜之光記錄媒體之生產效率’得到品質良好之材料 〇 藉由使Si〇2結晶粒之平均粒徑成爲〇·1〜30//m，可進 一步地改善前述特性。 【實施例及比較例】 以下，根據實施例及比較例，進行說明。此外，本實 施例僅只是一例，並未用該例子來做任何限制。亦即，本 發明係僅受申請專利範圍之限制，而包含本發明之實施例 以外之各種變形。 (實施例1) 使用成分組成爲Si〇2 - 0.5wt% Na2〇之Si〇2系玻璃粉， 對於ZnS以20mol%之比率來均一混合前述SK)2系玻璃粉 〇 將該混合粉，塡充至石墨模中，在Ar環境氣氛、面壓 150kg/cm2、溫度UKXTC之條件下，進行熱壓。 藉此所得到之靶相對密度係99%。該靶之表面顯微鏡相片 係顯7^：在圖1。 圖1之黑色球形部係表示Si〇2, Si〇2之結晶粒之平均 粒徑係5//m以下，在ZnS和SK)2間之表面上幾乎沒有空 隙存在。結果，得到高密度ZnS-SiCh相變型光碟保護膜开乡 成用濺鍍靶。 (實施例2) (請先閱讀背面之注意事項再填寫本頁)
--------訂---------線· ___2_____ 1237668 B7 五、發明說明（f) 使用成分組成爲SiCh - 0.5wt% B2〇3之SiCb系玻璃粉， 對於ZnS以20mol%之比率來均一混合前述Si〇2系玻璃粉 〇 將該混合粉，塡充至石墨模中，在Ar環境氣氛、面壓 150kg/cm2、溫度1000°C之條件下，進行熱壓。藉此所得 到之靶相對密度係97%。結果，得到高密度ZnS-SiCh相變 型光碟保護膜形成用濺鍍靶。該SEM相片係顯示在圖2。 圖2之黑色球形部係表示SK)2，該平均粒徑係l〇//m以下 ，得知ZnS和Si〇2間之空隙少。 (比較例1) 使用純度99.99%以上之SiCh粉，對於ZnS以20m〇l% 之比率來均一混合Si〇2粉。。 將該混合粉，塡充至石墨模中，在Ar環境氣氛、面壓 150kg/cm2、溫度1000°C之條件下，進行熱壓。藉此所得 到之靶相對密度係94%。結果，成爲密度低於本發明實施 例之ZnS-Si〇2相變型光碟保護膜形成用濺鍍靶。 該靶之表面顯微鏡相片係顯示在圖3。相同於前述，圖3 之黑色球形部係表示Si〇2，確認在ZnS和Si〇2間有許多空 隙存在。 【發明之效果】 本發明藉由使用在SiCh加入添加物而成之Si〇2系玻璃 材料，來獲得光碟保護膜形成用濺鍍靶及使用該濺鍍靶來 形成ZnS-Si〇2相變型光碟保護膜之光記錄媒體，其可減低 ____ ίο___ 本紙作全争邊吾1國國家標準(CNS；)A4規格(210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) ---I---訂--------- 1237668 A7 _B7_ 五、發明說明（1 ) 與ZnS間之空隙，即使進行微細化也容易達成高密度化， 且不會損害作爲保護膜之特性，能夠抑制在濺鍍時之所產 生之粒子（發塵）或結球之發生，提高成膜之均一性，提 升生產效率，而具有優異的效果。 (請先閱讀背面之注意事項再填寫本頁) . 訂---------線 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 017882

Claims (1)

1237668 A8 B8 C8 D8 ίίΐέ 々、申請專利範圍 1·-種相對密度90%以上ZnS-Si〇2濺鍍靶，其特徵在 於：使用將SK)2系玻璃粉末（將添加物之擇自鋰、鈉、鎂 、鋁、鉀、鈣或鋇所構成的金屬元素、硼、磷、砷或其等 的氧化物之一種以上以總量0.01〜20wt%來含有）1〜 50mol%和殘餘之ZnS粉末經均一分散混合而成之粉，進行 燒結而得。 2.—種相對密度90%以上ZnS-Si〇2濺鍍靶，其特徵在 於：使用將SiCh系玻璃粉末（將添加物之擇自鋰、鈉、鎂 、鋁、鉀、鈣或鋇所構成的金屬元素、硼、磷、砷或其等 的氧化物之一種以上以總量0.01〜20wt%來含有）1〜 50mol°/。、SiCb粉末0.01〜30mol°i和殘餘之ZnS粉末經均 一分散混合而成之粉，進行燒結而得。 3·如申請專利範圍第1或2項之ZnS-Si〇2濺鍍靶，其 中，Si〇2部之結晶粒之平均粒徑係0.1〜30//m。 4·一種使用ZnS-Si〇2濺鍍靶來形成ZnS-Si〇2相變型光 碟保護膜之光記錄媒體，其特徵在於：係使用申請專利範 圍第1〜3項中任一項之ZnS-SK^濺鍍靶。 (請先閱讀背面之注意事項^^填寫本頁) 裝 寫，1 '-ο —t @@ 玄.標準（CNS) A4 規格（210 X 297 公釐）
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JP4250686B2 (ja) * 1998-05-28 2009-04-08 東ソー株式会社 スパッタリングターゲット
JP3358548B2 (ja) * 1998-07-21 2002-12-24 三菱マテリアル株式会社 スパッタ割れのない光記録媒体保護膜形成用スパッタリングターゲット
JP3533333B2 (ja) * 1998-08-21 2004-05-31 Ｔｄｋ株式会社 光記録媒体の干渉膜用スパッタリングターゲットおよびその製造方法
JP3468136B2 (ja) * 1998-12-18 2003-11-17 三菱マテリアル株式会社 光記録媒体保護膜形成用スパッタリングターゲット
JP2001064766A (ja) * 1999-08-26 2001-03-13 Mitsubishi Materials Corp パーティクル発生の少ない光記録保護膜形成用スパッタリングターゲット
JP2001192819A (ja) * 2000-01-06 2001-07-17 Mitsubishi Materials Corp 直流スパッタリング可能な光記録保護膜形成用スパッタリングターゲット

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CN1533446A (zh) 2004-09-29
EP1371747A1 (en) 2003-12-17
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