TWI227525B - Forming method of soldering metal layer for optical fiber array base - Google Patents

Forming method of soldering metal layer for optical fiber array base Download PDF

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Publication number
TWI227525B
TWI227525B TW091107518A TW91107518A TWI227525B TW I227525 B TWI227525 B TW I227525B TW 091107518 A TW091107518 A TW 091107518A TW 91107518 A TW91107518 A TW 91107518A TW I227525 B TWI227525 B TW I227525B
Authority
TW
Taiwan
Prior art keywords
substrate
metal layer
nickel
forming
solution
Prior art date
Application number
TW091107518A
Other languages
English (en)
Inventor
Chung-Yi Jiang
Ming-Ren Wang
Kuen-Shian Jeng
Hung-Jiun Jin
Huei-Ping Huang
Original Assignee
Ritek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ritek Corp filed Critical Ritek Corp
Priority to TW091107518A priority Critical patent/TWI227525B/zh
Priority to JP2002219593A priority patent/JP2003315616A/ja
Priority to US10/411,257 priority patent/US20030194494A1/en
Application granted granted Critical
Publication of TWI227525B publication Critical patent/TWI227525B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
    • G02B6/3636—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3648—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures
    • G02B6/3652—Supporting carriers of a microbench type, i.e. with micromachined additional mechanical structures the additional structures being prepositioning mounting areas, allowing only movement in one dimension, e.g. grooves, trenches or vias in the microbench surface, i.e. self aligning supporting carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
    • G02B6/3684—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier
    • G02B6/3692—Mechanical coupling means for mounting fibres to supporting carriers characterised by the manufacturing process of surface profiling of the supporting carrier with surface micromachining involving etching, e.g. wet or dry etching steps
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/36—Mechanical coupling means
    • G02B6/38—Mechanical coupling means having fibre to fibre mating means
    • G02B6/3807—Dismountable connectors, i.e. comprising plugs
    • G02B6/3833—Details of mounting fibres in ferrules; Assembly methods; Manufacture
    • G02B6/3855—Details of mounting fibres in ferrules; Assembly methods; Manufacture characterised by the method of anchoring or fixing the fibre within the ferrule
    • G02B6/3861—Adhesive bonding
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemically Coating (AREA)
  • Mechanical Coupling Of Light Guides (AREA)

Description

1227525 A7
【本發明之背景】 光通訊中大量使用光纖作為通訊傳輸信號之介質，且 配合鬲通道數（High channel counts)平面波導元件 (Planner Waveguide Circuit-PLC)及高密度波長多工 (Dense wavelength DeMux/Multiplexer DwD⑷技 術發展，可利用光訊號之高速及大容量來傳送資料，以滿 足網際網路高速度及寬頻之需求。通常於高通道數之平两 波導元件使用陣列光纖元件（Fiber array)方式連接相關 光電元件。而陣列光纖通常為一具有陣列光纖溝槽基座可 容置光纖束’並藉由具有熔接金屬層之V型溝槽，使用銲 接（soldering)方式固定光纖束之方向，以確保光纖束 對準之精度〇 I· 以往使用之陣列光纖元件（F iber array)多為將光纖 I 束之裸路光纖固定於一具有預先刻製溝槽之基座上，再填 | 充入接著劑，蓋上上蓋之後以壓力及光照或加熱方式使光 I 纖黏著於該基座及上蓋中，形成陣列光纖元件（Fiber f array)。然而，由於接著劑對於抗環境老化之壽命有限， 皇| 相較於金屬焊料溶接方式遜色，故如何於陣列光纖基座表 | 面形成可熔接金屬，以俾利使用焊料熔接方式製作陣列光 ίI 纖模組’係為一關鍵技術及急須突破之難題。 叫 —4 本纸張尺度適用中_家標準（CNS)A4^^_1Q x 297公爱）------- --------訂------.—線— (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印則π
— (請先閲讀背面之注意事項再填寫本頁) 1227525 B7 五、發明說明（Z ) 發明人爰因於此，本於積極發明之精神，i思一種可 、乂解决上述問喊之「陣列光纖基板表面熔接金屬層形成方 去」，幾經研究實驗終至完成此項嘉惠世人之發明。 【本發明之概述】 本發明之主要目的係在提供一種陣列光纖基座表面熔 接金屬層形成方法，俾能提供一種製程簡單，可大量實 施，成本低廉，節省製造時間之表面熔接金屬層形成方 法。 為達成上述之目的，本發明陣列光纖基座表面熔接金 屬層形成方法，係包含以下之步驟：先（A)於“或 Pyrex材質之基座一表面上形成複數個槽溝；而後（B )
Si晶圓基座採用蒸鍍或丨賤鍍方式，於2·5χ i〇-3 T〇r壓力 下’沉積鎳鉻（Ni/Cr)合金，厚度控制為〇.2至〇.5μιη ; 若基板為Pyrex玻璃，則採用蒸鍍方式，於2 X 1〇·6 T〇r 下沉積0.2至0.5 μηι之鋁（A1)金屬層；（C)含有SnCl2之 敏化溶液處理該具複數個槽溝之基板表面，以於該表面沈 積離子Snh ; ( D )於以含2至10g/l之PdCl2&0.01至 〇·1Μ HC1之活化溶液處理該經敏化之基板表面，以於該 表面沈積觸媒原子Pd〇 ;以及（Ε )將該基板表面浸置於 一無電鎳電鍍溶液以於該基板表面沈積一鎳金屬層。 本發明之表面熔接金屬形成方法尚可視需要，選擇性 地更包含步驟（F)以一無電鍍金溶液（Electroless gold plating solution)處理該基板表面以於該基板表面 訂·· ;線· 1227525 A7 B7 五、發明說明（3 ) 化0 沈積-足夠厚度之金金屬層，讀止該鎳金屬層快速氧 由於本發明確有增進功效.，故依法申請發明專利 【圖式簡單説明】 f·1圖係本發明具槽溝基座單^之砍晶圓之上視圖。 第2圖係本發明方法各步驟中之砍晶圓橫剖面示意圖（ 【圖號説明】 100矽晶圓基板 110基座單元 200切割後之基座210具有槽溝之晶片 220鎳金屬層 230黃金層 【車父佳具體實施例之詳細説明】 員 本發明之槽溝形成方法可為任何習用之方法，較佳為 以刀刻法或蝕刻法於基板上形成（請參照第丨圖）◦例如 最常見者，係先於一矽晶圓基板1〇〇上形成複數個具槽溝 之基座單元110，以利於大量生產，待將來金屬層形成 後’再將之切剳形成光陣列之基座2 〇 〇 (請參照第2 d 圖）。本發明中該基板之刻槽表面係浸入lg/]L (6 4χΐ(Γ 3μ)之氯化亞錫溶液中，浸泡5_1〇分鐘，徐徐攪袢溶液。 基座表面上會附著亞錫離子，且表面不會產生任何物理性 剝落現象。1 g/L氯化亞錫溶液製備方式如下：於3 〇 〇毫升 18 Ω水中加入3 00毫克SnCi2結晶，並攪拌約3分鐘產生 1 υ 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 1227525 員 製 A7 五、發明說明（4) 澄清、無色溶液。此SnCh溶液在使用前係儲存於氮氣 中。 敏化的基座表面隨即浸入水中二次，再置於含 6g/L(3.4xl〇_2M)氯化鈀與〇·〇2Μ HC1之活性溶液中1分 鐘，徐徐攪拌。 為了將基板表面敏化現象調整至最佳狀況，經研究 HC1與PdCh之濃度效應。結果顯示pdcl2之濃度愈高愈 好，而HC1之濃度則應儘量減少，但仍應維持在可溶解 PdCl2之情況下。製得之Pdcl2iPd含量範圍為2§/乙至 l〇g/L，以6g/L最好。由於附著於表面之Sn2+離子容易在 傳送至P d C12浸潰液過程中產生氧化及去吸附現象，與還 原反應形成競爭情況。如果在Pdcl2濃度為6g/L，1^(：1濃 度為0 · 0 2至〇 · 〇 5 Μ情況下浸泡可產生良好的鎳鍍層。但在 HC1濃度為^丨…情況下浸泡則只有部分區域有鍍層產 生。因此，配合PdCl2所使用之HC1量應降至最低，維持 在恰可溶解所有PdCl,之情況下。HC1濃度若為0.01]^是 不夠的，而建議使用〇.〇2M HC1。 ^ 適用之無電鍍鎳溶液為一般傳統之商業無電鍍鎳溶 液，其通常包含兩種溶液之組合，亦即溶液A及溶液B， 其於使用前方得以混合調配。溶液A為鎳離子來源，如氯 化鎳、硫酸鎳以及醋酸鎳，而溶液6則為次亞磷酸根（還原 劑）來源，如次亞磷酸鈉。鎳鍍層溶液中該溶液八含有硫酸 鎳，溶液B含有次亞磷酸鈉、氫氧化鈉以及醋酸。鎳溶液 係製備於將溶液A、溶液B以及水結合，溶液pHi範圍為 L _— —_ 7 本紙張尺度適財國規格⑽X 297公爱） 1227525 A7 五、發明說明（t 4.5-5.2。使用於金屬化過程之鎳溶液係製備於將溶液 A、溶液B以及1 8 Μ Ω水，以1 ·· 3 : 1 6比例結合，之後再使 用Halgne Media-Plus過濾單元（孔徑大小為0.2微米之 耐隆）過濾。此溶液之pH値為約4.85。鎳鍍層之溫度約為 8 5 °C。溫度控制非常重要，因為在高溫下，鎳會自發性地 鍍在鍍層容器壁上，而在低溫下鎳鍍層速率會大幅降低。 鍍層容器壁頂部至底部之溫度梯度大於i_2aC，如大至1〇 °c或更多，會導致自發性的鎳鍍層現象。鎳鍍層的自行催 化性質會導致鎳快速累積以及氫氣快速產生。該氫氣泡， 附著於基座表面而妨礙鍍層沉降。良好的溫度控制係將承 裝有鎳溶液之容器，置入其下方裝有水並具有攪拌棒之較 大各益中’再置放於fluoroware cage上。圍繞鎳溶液容 器之水浴可嚴密控制溫度梯度，使溶液維持在適當溫度 下。利用此方法，在6小時内所觀察到的自發性鎳鍍層現 象非系少。本發明可以在一晶圓（wafer)或Pyrex玻璃 基板形成複數個具有槽溝之晶片2丨〇 (請參照第2 &圖）， 經由化學方式沉積鎳金屬220 (甚至包含黃金層23〇)於 晶圓或Pyrex基板上2 1 〇 (請參照第2b及2c圖），再加以 切割（請參照第2d圖），用以大量生產具可熔接鎳金屬肩 之陣列光纖基座。 於鎳金屬無電電鍍之後，可以視需要選擇性地於鎳金 屬層表面鐘上一層黃金層。該黃金層之無電鍍係於潤溼該 矣二播電鍍鎳金屬之基板後，將該基板於7 〇 〇 c下浸潤於一 PH値為5·0_7·2之無電鍍金溶液（electroless gold A--- (請先閱讀背面之注意事項再填寫本頁) ·. ·-線· 經濟部智慧財產局員工消費合作社印制π 8 I227525 B7 五、發明說明（G ) h)中無電鍍金溶液（electroless gold bath) 沈浸約10分鐘，並溫和地攪拌。如此可以於鎳金屬表面形 成一厚度約0.18"扭之黃金層，無電鍍黃金所使用之溶 液’係將商用之無電鍍黃金溶液於使用前進行純化後使 用〇 為能讓貴審查委員能更瞭解本發明之技術内容，特 舉陣列光纖基板表面熔接金屬形成方法較佳具體實施例説 明如下。 實施例一 依照下述之步騾進行表面鎳金屬化：（A )提供一承 載有SnCl2水浴之容器，一承載有去離子水之容器，以及 一承載有PdCb與HC1浴之容器；（B)將濺鍍或蒸鍍之 基板浸入含有lg/L SnC12之敏化水溶液中，於室溫下浸 泡5-10分鐘，之後以去離子水潤洗至少一次；（c )此敏 化過之基板表面，浸入含6§/[ Pdcl2以及〇 〇2M HC^ 活性溶液中，於室溫下反應約丨分鐘，接著以去離子水潤 洗兩次；（D)此活性基板表面以75。〇之流動氣體乾燥， 歷時约5-10分鐘；（E)將該活性基板表面浸入該非電解 性鎳鍍層溶液約20分鐘，溫度維持在85±rc，隨後以去 離子水潤洗；（F)鍍鎳基板表面浸入無電鍍金溶液約1〇 分鐘’需攪拌’溫度維持在7 0 °C，隨後以去離子水潤洗，· 若有必要，基板表面於75°C下以流動氣體乾燥約1〇分 鐘。 本紙張尺度適用中關家標準（CNS)A4規格(210 X 297公爱） 1227525 A7 ----------B7__ 五、發明說明（7) 综上所陳，本發明無論就目的、手段及功效，在在均 顯示其迥異於習知技術之特徵，為「陣列光纖基板表面溶 接金屬形成方法」之一大突破，懇請早日賜准專利，俾嘉 惠社會，實感德便。惟應注意的是，上述諸多實施例僅係 為了便於説明而舉例而已，本發明所主張之權利範圍自應 以申請專利範圍所述為準，而非僅限於上述實施例。 (請先閱讀背面之注音？事項再填寫本頁) - 訂-丨^-------線—» 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

1227525 六、申請專利範圍 經 濟 部 智 慧 財 產 局 員 工 消 費 合 社 印 製 1 . 一種陣列光纖基板表面熔接金屬形成方法，係包含以 下之步驟： (Α)於基板一表面上形成複數個具有V型槽溝之陣 列光纖基座； 採用蒸鍍或濺鍍方式於該基板上沉積鎳鉻 (Ni/Cr)或紹（Α1)金屬層； 於含去離子水及SnCl2之敏化溶液 (sensitizing solution)處理該具複數個槽溝 之基板表面，以於該表面沈積Sn2 +離子； (D)於含 2 至 10g/l 之 PdCl2 及 0.01 至 0.1M HC1 之 活化溶液（a c t i v a t i n g s ο 1 u t i ο η )處理該經敏 化之基板表面，以於該表面沈積觸媒原子 P d 〇 ;以及 (E ) 將該基板表面浸置於一無電鎳電鍍溶液 (electroless nickel plating solution)以於 該基板表面沈積一鎳金屬層。 2.如申請專利範圍第1項所述之表面熔接金屬形成方法， 其中該步驟（B)之金屬層厚度為0.2至0.5 μηι。 3 ·如申晴專利範圍第1項所述之表面溶接金屬形成方法， 其更包含步驟（F)以一無電鍍金溶液（electr〇less gold plating solution)處理該基板表面以於該基板 表面沈積一足夠厚度之金金屬層，以防止該鎳金屬層 氧化。 4 ·如申凊專利範圍第1項所述之表面熔接金屬形成方法， 其中該槽溝係以刀刻法或餘刻法形成。 Β C 訂 線 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297^" A8B8C8D8 1227525 六、申請專利範圍 5 ·如申請專利範圍第1項所述之表面溶接金屬形成方法， 其中該SnCl2之敏化溶液（sensitizing solution)包含 〇·5 至 3 g/1 之 SnCl2。 6·如申請專利範圍第1項所述之表面熔接金屬形成方法， 其中該PdCl2之活化溶液之HC1濃度介於〇.〇2至0.05 Μ之間。 ^ ---·-----$ (請先閲請背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公g )
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