TWI225768B - Electromagnetic shielding material to form shielding layer - Google Patents

Abstract

An electromagnetic shielding material of the present invention is characterized in that a shielding layer (103) having a thickness of 1 to 8 mum and made of at lease one kind selected from the group consisting of Ni, Fe, Co, Ti, Zn, Cr, Sn, Cu and alloys containing at lease one of those metals is formed on a surface of a polymer film (101) in the form of a single layer or two or more layers by a sputtering method, a vapor deposition method or a plating method.

Description

1225768 (1) Description of the invention [Technical field to which the invention belongs] The present invention relates to an electromagnetic wave shielding material. In more detail, electromagnetic waves such as those installed on various telecommunications machines, computers, home appliances, automobiles, and electric wires, etc., which effectively mask various noises generated by them, will not be released to the outside, and will effectively mask other sources of interference. The irradiated electromagnetic waves will not penetrate the electromagnetic shielding material inside.

[Prior art]

Conventionally, it has been known that electromagnetic waves having various frequencies from communication devices, computers, home appliances, automobiles, electric wires, and the like are generated in a noise pattern or the like. These electromagnetic waves are known to cause erroneous actions of other electrical products and have an adverse effect on the human body. So try to cover it up in a variety of ways. For example, countermeasures for masking electromagnetic waves with a low frequency have conventionally used compression-stretched iron belts and elementary bodies, but they are bulky and bulky, making them difficult to apply to various products that have become thinner and shorter in recent years. On the other hand, masking countermeasures for electromagnetic waves with high frequency are to use a copper foil bonded to a synthetic resin film. Although it can be thinned to a certain thickness in the above-mentioned iron tapes, etc., it is limited in the production of thin copper foil and it is difficult to cheap Manufactured to a thickness of 9 μm or less. Therefore, in the case of using thin, thin, and short products in recent years, it is desired to further improve its performance, particularly in the case of using applications requiring flexibility. Also, in these previous masking countermeasures, it is not possible to cope with both the low frequency and the high frequency. Also, in JP-A No. 2000- 2 1 2 3 1 5, an electromagnetic wave masking material described in a polymer-4- (2) 1225768 film is used to form a masking layer made of a metal by a vacuum evaporation method. . However, since a masking layer is formed by a vacuum evaporation method, it is difficult to form a thick masking layer, and a sufficient masking effect cannot be achieved.

Also, Japanese Patent Application Laid-Open No. 200 1 -1 43 644 describes an electromagnetic wave shielding material that forms an electrode film in the outermost layer of a multilayer structure composed of a conductive layer and a low-conductivity layer. However, since the outermost electrode film is formed only by a sputtering method using a vacuum process or the like, it is difficult to form a thick masking layer, and a sufficient masking effect cannot be achieved. Also, Japanese Patent Application Laid-Open No. 2000-2000 07.6 describes an electromagnetic wave shielding material in which a first metal layer is formed by physical vapor deposition and a second metal layer is plated thereon. However, the anti-oxidation effect by the first metal layer is insufficient, and the second metal layer is deteriorated by oxidation and has a possibility of peeling off, so that a sufficient masking effect cannot be achieved.

Further, in Japanese Patent Application Laid-Open No. 2 002-1 98 6 81, an electromagnetic wave shielding material is described in which a plating film is formed on the surface of a substrate made of resin. However, since a plating film is formed directly on the matrix material, the adhesion between the matrix material and the plating film is weak, and the masking effect cannot be achieved by peeling. [Summary of the Invention] The present invention has been made in view of the current situation as described above, and an object thereof is to provide an electromagnetic wave shielding material capable of coping with various products that are thinner, thinner, and more flexible by reducing the thickness thereof. In addition, another object of the present invention is an electromagnetic wave masking material capable of simultaneously masking electromagnetic waves of both low frequency and high frequency at fc, if necessary, from 5 to 1225768 0). In order to solve the above problems, the present inventors repeatedly studied and found that it was difficult to solve the above problems by the previous method of forming a masking layer. It was necessary to form a masking layer by a completely new method of forming a masking layer, and then continue to investigate based on this finding 'Furthermore, the present invention has been completed. That is, the electromagnetic wave shielding material of the present invention is an alloy containing at least one kind of Ni, Fe, Co, Ti, Zn, Ci *, Sn, and other metals on the surface of the polymer film. At least one masking layer made of the selected group is selected, and one or two or more layers are formed by any one of a sputtering method, a vapor deposition method, and a plating method. Also, "the electromagnetic wave masking material of the present invention is between the surface of the polymer film and the masking layer" so that the thickness is the following, and is made of oxides and nitrides containing at least one kind of Ni, Co 'Zn, Ti, Cr, and other metals And at least one type of base layer selected from the group consisting of alloys of these metals, and one or two or more layers formed by any one of a plating method and a vapor deposition method. Also, the electromagnetic wave masking material of the present invention is between the surface of the polymer film and the masking layer, the thickness is 1 μηΐ or less, and the oxide film contains at least one kind of oxides of Ni, Co, Zn, Ti, Ch •, and other metals. Selected from the group consisting of nitrides, nitrides, and alloys of these metals, and has a base layer having an oxidation prevention effect formed by any of sputtering or vapor deposition methods, and a thickness of 1 μΐΉ or less, and It is composed of at least one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, Cii, and these metals', and the effect formed by any one of the sputtering method or the evaporation method is electric-6- ( 4) A base layer of 1225768 electrodes is formed in this order. Furthermore, the electromagnetic wave masking material of the present invention is a masking layer selected from the group consisting of at least one kind of Ni, Co, Fe, and their metal alloys.

In addition, the electromagnetic wave masking material of the present invention is a masking layer made of Cu. In addition, the electromagnetic wave shielding material of the present invention is formed by forming two shielding layers separately. One of them is made of Cu, and the other is made of an alloy containing at least one kind of Ni, c 0, Fe, and these metals. Choose a composition. Also, the electromagnetic wave shielding material of the present invention is formed into three masking layers separately. The intermediate layer of the three layers is a layer formed by C υ, and the layer is sandwiched and formed to contain at least one kind of Ni, Co, and Fe above and below. One of the layers selected from the group consisting of alloys of these metals.

In addition, the electromagnetic wave shielding material of the present invention is on any surface of a polymer film, has a thickness of 1 μm or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides of these metals, One kind of base layer composed of nitrides and alloys of these metals is selected. One or two or more layers are formed by any of sputtering method and evaporation method, and at least one kind of Ni, Co is formed thereon. , Fe and their alloys are selected from the group consisting of a first masking layer, and a layer of Cu is formed thereon, and on the other surface of the polymer film, the thickness is A substrate layer composed of at least 1 μmτα and containing at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides, nitrides, and alloys of these metals is selected from the group consisting of Either one of the plating method or the vapor deposition method is used to form one or two or more layers, and to form thereon an alloy containing up to Ί · (5) 1225768, one of Ni, Co, Fe, and other metals selected from the group consisting of The third masking layer

"Electromagnetic wave masking material of the present invention is surface-returned on any of polymer films" Let the thickness be 1 μm or less and contain at least one of Ni, C0, Zn, Fe, Cu, Ti, Cr, etc. One of the metal oxides, nitrides, and alloys of these metals is selected from the group consisting of one or two or more layers formed by sputtering or evaporation, and formed by A first masking layer made of Cu, and a second masking layer made of one selected from the group consisting of an alloy containing at least one kind of Ni, Co, Fe, and these metals is formed on the polymer film. The other surface is selected from the group consisting of a thickness of 1 μm or less, and containing at least one kind of metal, oxide, nitride, and alloy of these metals, including Co, Zn, Fe, Cu, Ti, and Cr. One type of base layer is selected from the group consisting of one or two or more layers formed by a sputtering method or an evaporation method, and an alloy containing at least one kind of Ni, Co, Fe, and these metals is formed thereon. A third masking layer. Further, "the electromagnetic wave masking material of the present invention is a masking layer made of Cu", and a discoloration preventing layer made of Sn, N !, Co, Ding, Zn, or Zn is formed. [Embodiment] (Electromagnetic wave masking material) The electromagnetic wave masking material of the present invention basically has a structure in which a masking layer is formed on the surface of a polymer film. Hereinafter, each configuration will be described. (6) (6) 1225768 (Polymer film) Examples of the polymer film used in the present invention include synthetic resin films, thermoplastic elastomer films, and rubber films. Examples of the synthetic resin film include films made of synthetic resins such as PET, PEN, acrylic, nylon, polyethylene, polypropylene, vinyl chloride, polyimide, liquid crystal polymer, and epoxy. Examples of the thermoplastic elastomer film include films made of thermoplastic elastomers such as styrene-based, vinyl chloride-based, olefin-based, urethane-based, ester-based, and ammonium-based. Examples of the rubber film other than natural rubber include butadiene rubber, isoprene rubber, chloroprene rubber, styrene-butadiene rubber, nitrile rubber, butyl rubber, ethylene-propylene rubber, Films made of synthetic rubber such as acrylic rubber, urethane rubber, fluorine rubber, and silicone rubber. The types of synthetic resins, thermoplastic elastomers, or rubbers listed here are merely examples and are not limited thereto. In addition, the so-called thin film of the present invention includes a sheet-like shape having a thickness of 2 to 200 μm, and preferably 4 to 30 μ1. When the thickness is less than 2 μm, it is difficult to fully function as a substrate for supporting a masking layer described later. On the other hand, when it exceeds 200 μm, it becomes a product that lacks flexibility and is difficult to adapt to thinner and shorter products. In the present invention, the kind and thickness of the synthetic resin, thermoplastic elastomer, or rubber can be selected according to its application. For example, in applications where heat resistance is required, polyimide and liquid crystal polymer are selected as synthetic resin ', and when heat resistance is not required, cost and the like are considered, and ΡΕΤ and the like are appropriate. When elasticity is required, it is appropriate to select a thermoplastic elastomer and rubber. In addition, for such polymer films, for the purpose of improving the strength of (7) (7) 1225768 barrel and giving a flame-resistant effect, various fillers such as glass fiber can be added. In addition, "the polymer film used in the present invention is preferably dried before the formation of each layer described later" so that the water content is less than about 0.01%. It is used to improve the adhesion with the layers described below, especially with the masking layer. This drying treatment method can be carried out according to a conventional method, and examples thereof include a vacuum state heated at a temperature of 40 to 20 (rc, preferably 40 to 120 ° C) (〗 X 1 〇-3 to 1 · 5 X 1 (T) Pa) The method of collision treatment under the conditions of the collision treatment is: Ar gas 60 ~ 300 cc / min, preferably 100 ~ 200 cc / min, output power 0.5 ~ 2kw, It is preferably m 3kw, and it can be performed using a sputtering device, etc. X 'The polymer film used in the present invention is preferably an ion gun that irradiates an object with an ion, and an ion gun that irradiates at least one ion is preferably used for pretreatment. . Such ions include rare gas ions such as argon, oxygen ions, nitrogen ions, or mixed ions thereof. If the polymer film is irradiated with ions in this way, the adhesion of the polymer film of the masking layer and the base layer described later will be closely adhered. The property is very high. Although the mechanism is not explained in detail, “the surface of the polymer film is probably activated by ion irradiation” or roughening treatment (concave and convex treatment) in an extremely fine state is considered. 〇 Irradiation of such polymer films Ion formation It is better to perform the pre-treatment type of the masking layer and the base layer as described above. The conditions for irradiating ions with an ion gun are, for example, in a device equipped with an ion gun, lxio · 3 to TxlO ^ Pa, preferably 5xl0 · 3 to SxlO ^ Pa of -10- (8) (8) 1225768 Under vacuum, the ion source gas is 50 ~ 50cc / min, preferably 80 ~ 2 5 0cc / min, the target current (power) 0.01 ~ 5kw / dm2, preferably 〇.] ~ 3 kw / d] n 2. (Mask layer) The mask layer of the present invention is used for masking electromagnetic waves having various frequencies, that is, it has a masking effect, and is used for the aforementioned polymer film. The surface, or in the case of forming a later-mentioned base layer, is formed thereon. Such a masking layer is a G degree of 1 to 8 μη ′ and contains at least one kind of Ni, Fe, Co, Ti, Zη, &, Sn, Cia, and One is selected from the group consisting of alloys of these metals, and it is characterized by forming one or two or more layers by any of sputtering, evaporation, or electroplating. Its thickness is limited to 1 to 8 μπι. When the thickness is less than 1 μηι, the shielding property for electromagnetic waves is insufficient. On the other hand, even if it exceeds 8 μηι, it will not make a difference in the shielding of electromagnetic waves and will hinder flexibility. Taking these points into consideration, its thickness is particularly preferably 2 ~ 5 μηι. In addition, it will constitute a component It is limited to the above-mentioned metal system because of its excellent shielding property against electromagnetic waves, and its formation means must be able to adopt a sputtering method, a vapor deposition method, or an electroplating method. In addition, the formation method uses a sputtering method, a vapor deposition method, or an electroplating method. The aforementioned metal cannot be used as a metal foil, and in terms of performance, it must have sufficient adhesion with a polymer film, etc., and its thickness can be freely set as required. The masking layer of the present invention preferably selects the type of constituent metal according to the number of electromagnetic waves to be masked. For example, for low frequency electromagnetic waves with a frequency of approximately 5 0 0 0 Η ζ or less, select a group consisting of alloys containing at least one Ni »11-(9) (9) 1225768, Co, Fe, and their metals It is better to choose one of them. For electromagnetic waves with a high frequency of about 5000 Hz or more, Cu is better. More specifically, when the masking layer is made of Cu, it is preferable to form an underlayer having an oxidation prevention effect to be described later on the surface of the polymer film and to form an undercoat layer composed of Cu on the surface. Composition of electroplating solution (copper sulfate 50 ~ 300 g / L, preferably 80 ~ 150 g / L, sulfuric acid 50 ~ 300 g / L, preferably 90 ~ 丨 60 g / L, chlorine 3 0 ~ 1 0 0 ppm, preferably 5 0 ~ 7 0 ppm, and if necessary add a small amount of additives) 'Current density 0 · 1 ~ 2 0 A / dm 2, preferably 0.5 ~ 4 A / dm2, Liquid temperature 10 ~ 7 0 t: When plating is performed under the condition of preferably 25 ~ 35 ° C, it can be formed to a thickness of ~ 8 μm. This makes it possible to form a masking layer that exhibits particularly excellent masking properties for electromagnetic waves with a high frequency. In addition, the masking layer of the present invention can be separately formed into two or more layers. For example, if one is selected from the group consisting of alloys containing at least one Ni, Co, Fe, and their metals, and Cu respectively constitute two masking layers, it can be used for low frequency and high frequency. The masking layer showing the masking property of the two electromagnetic waves is one of the particularly preferred aspects of the present invention. More specifically, the surface of the polymer film, preferably the surface of the substrate layer described later, is formed on the surface of the polymer film, and the composition of the plating solution (nickel sulfate 50 ~ 350 g / liter, preferably 200 ~ 250) G / L, nickel chloride 10 to 100 g / L, preferably 40 to 50 g / L, boric acid 10 to 60 g / L, preferably 30 to 50 g / L, and a small amount of Additives, and p Η 0 · 5 to 6 · 0, preferably p Η 3.0 to 4 · 5), current density 1 to 10 A / dm2, preferably 2 to 4 A / dm2, liquid temperature 3 0 Electroplating under conditions of ~ 70 ° C, preferably 45 ~ 55 ° C, to form a first masking layer composed of -12- (10) (10) 1225768 1 ~ 8 μηι thick, and A first masking layer made of Cu with a thickness of 1 to 8 μm was formed thereon under the same conditions as above. Also, 'the formation order of these two masking layers can of course be reversed from the above, and in this case, both low frequency and high frequency electromagnetic waves can be masked. In addition, for example, when an alloy made of Fe and Ni is used instead of Ni to form the masking layer, the composition of the plating solution (nickel sulfate 40 to 400 g / liter, preferably 80 to 320 g / liter, nickel chloride 20 ~] 00 g / L, preferably 80 to 320 g / L, boric acid 0 to 70 g / L, preferably 35 to 50 g / L, ferrous sulfate 2 to 50 g / L, preferably 5 ~ 20 g / L, plus a small amount of additives, if necessary, and pH 2 ~ 5, preferably pH 3 ~ 3.8)), current density 1 ~ 15 A / dm2, preferably 4 ~ 6 A / dni2, liquid It can be formed by plating at a temperature of 30 to 70 ° C, preferably 50 to 60 ° C. Moreover, the masking layer of the present invention may be formed in three or more layers. For example, as described above, a first masking layer selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and these metals is formed, and a second masking layer composed of Cu is formed thereon, and then A third masking layer selected from the group consisting of alloys containing at least one of Ni, Co, Fe, and their metals is formed thereon. If such a structured electromagnetic wave shielding material is installed in an electric product, for example, the low-frequency electromagnetic wave generated inside the electric product can be shielded, and the electromagnetic wave to be penetrated into the interior from the outside can be effectively shielded. On the other hand, the masking layer of the present invention may be formed on both the front and back surfaces of the polymer film. For example, on any surface of a polymer film, the thickness is 1 μ] or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu -13- (11) 1225768

'Ti' Cr 'The oxides, nitrides and alloys of other metals are used to form a base layer formed by one or two layers by either sputtering or vapor deposition. Above, a first masking layer composed of one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and these metals is formed thereon, and a second masking layer composed of Cu is formed thereon 'and On the other surface of the polymer film, the thickness is 1 μηι or less and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides, nitrides, and alloys of these metals One of the following base layers is selected from the group consisting of one or two or more layers formed by a sputtering method or a vapor deposition method, and at least one kind of Ni, Co, Fe, and other metals are formed thereon. An aspect of the third masking layer selected from the group consisting of alloys. In addition, other aspects may include, for example, the surface of any polymer film, the thickness of which is 1 μη or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, C, and the oxidation of these metals. A base layer described later is selected from the group consisting of metals, nitrides, and alloys of these metals. One or two or more layers are formed by any of a sputtering method or a vapor deposition method, and a Cu substrate is formed thereon. The first masking layer is formed, and a second masking layer composed of one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe and these metals is formed on the other surface of the polymer film. 'Let a thickness of 1 μm or less and at least one of Ni, Co, Zn, Fe, CU, Ti, Cr, oxides, nitrides, and alloys of these metals be selected from the group described below. The basement layer is formed by one method of the beach ore method or the steam ore method to form one or more layers, and formed thereon containing at least one kind of Ni, C0, Fe and their gold-14-(12) 1225768 selected from the group consisting of alloys of the third The appearance of the masking layer (base layer)

The base layer of the present invention functions as an electrode when the aforementioned masking layer is formed, and is particularly useful when the aforementioned masking layer is formed by electroplating. In addition, the base layer also has a role as an oxidation preventing layer for preventing the mask layer and other base layers from being oxidized as a layer formed by the layer above the upper layer. The masking layer is oxidized over time by the action of oxygen in the air and dissolved oxygen in the water contained in the polymer film. In this way, once these layers are oxidized, their adhesion to the polymer film is significant. Reduces discomfort such as peeling. In such cases, if a base layer with an anti-oxidation effect is present between these layers and the polymer film, it can effectively capture the aforementioned oxygen diffused from the polymer film in the direction of these layers, so the oxygen is arriving here These layers have been effectively removed. The underlayer having such an oxidation prevention effect is particularly effective in the case where the masking layer and other underlayers are made of Fe and Cu ', and it is not necessarily formed in the case of other metals. Such a base layer is formed between the surface of the aforementioned polymer film and the masking layer and has a thickness of 1 μm or less, and contains at least one kind of oxides of Ni, Co, Zn, Fe, Cu, Ti, Cr, and other metals From the group consisting of nitrides, and alloys of these metals, one or two or more layers may be formed by any of a sputtering method or an evaporation method. The thickness is limited to 1 μm or less because it is sufficient to act as an electrode and / or prevent the oxide layer from being 1 μm, and -15- (13) (13) 1225768 does not require a higher thickness. In addition, the constituent components are limited to the above-mentioned metals because these metals exhibit excellent electrical conductivity and oxidation prevention effects, and are suitable for formation by sputtering and vapor deposition. Regarding these metals, mainly Fe and Cu are used as electrodes, and T i and C r are used as oxides, and Ni, C 0 and Zn have both functions. Characteristics. On the other hand, the sputtering method and the vapor deposition method are used as the formation means, because it is not necessary to use a plating method suitable for forming a thick layer, and the polymer film can be processed as it is. In addition, such a base layer can form one or more layers as described above. In the case where two or more layers are formed, a base layer having an oxidation prevention effect is mainly formed on the surface of the polymer film, and an electrode is formed thereon. The base layer is preferred. When such a base layer is formed by a sputtering method, for example, the conditions are a vacuum degree of IxlCT4 to UxlO ^ Pa, preferably 1x10.4 · 1.5 to 1.5xl0_2Pa, an output power of 0.5 to 15kw, and preferably 0.8 to 10kw. The conditions for Ar gas being 100 to 400 cc / minute, preferably 100 to 250 cc / minute are preferable. In the case of forming by a vapor deposition method, a vacuum condition of 1 X 1 0 · 5 to 1 X 1 (T2Pa, preferably 1 X10 · 4 to 1 xl (T3Pa, output power 10 to 150 kw, preferably 40) The condition of ~ 90kw is better. By adopting such conditions, the thickness can be made from 20A to 1μιη, preferably from 50 to 3000A. Also, before forming the aforementioned masking layer on such a base layer, on the base layer An acid activation treatment with sulfuric acid at a concentration of 0.5 to 50%, preferably 3 to 10%, for 0.1 to 3 minutes, and preferably 0.5 to 1.5 minutes, makes the activation better. By performing such an acid activation treatment, Then, when the metal constituting the base layer is oxidized (that is, the metal is oxidized into copper oxide when it is Cii), it can also be effectively reduced or dissolved by -16- (14) (14) 1225768 to improve the density of the masking layer. It can be formed on the base layer. (Discoloration prevention layer) The discoloration prevention layer of the present invention is used when the masking layer is made of Cu. (When the masking layer is made of two or more layers, the top layer is made of Cu.) It is formed to show the effect of effectively preventing Cu from being discolored by oxidation. Therefore, it is a masking layer for the formation It is formed on top. This type of discoloration prevention layer is formed of Sn, Ni, Co, Ti, Zn, or Cr, and the formation method is not special ® 'It is usually formed by vapor deposition method, vapor deposition method, or electroplating method. For example, When @Sn is formed by electroplating, the conditions can adopt the composition of the plating solution (Sn 10 ~ 70 g / L, preferably 20 ~ 60 g / L, organic acid 70 ~ 200 g / L, preferably 90 ~ 1 30 g / L, and add a small amount if necessary! 1), current density 0.5 ~ 10A / dm2, preferably 2 A / dm2, liquid temperature 1 0 ~ 7 0 ° C, preferably 20 ~ Conditions such as 30 ° C. By using such wood, the thickness can be made into 0 · 0 1 ~ 2 μm, preferably 0.1 ~ 1 μ η. The present invention will be described in more detail below with examples, but The present invention is not limited thereto. (Example 1) This example is an electromagnetic wave shielding material that forms a base layer on the surface of a polymer film and forms a masking layer made of an alloy formed of Ni and Fe. Hereinafter, Illustrate with reference to the figure. Cut 25 μ1Ώ PET film as the polymer film 101 into (15) (15) 1225768 width 2 50 mm After a length of 100 m, it was wound up with a core made of stainless steel, and it was assembled into a delivery shaft in the sputtering device chamber, and its front end was attached to the winding shaft with a polyimide tape with an adhesive attached. After that, the chamber was made into a vacuum state of 4 X 1 0 · 2 Pa with a vacuum pump, and the driving drum, the sending shaft, and the winding shaft with a cooling device were respectively made of polymer film at a speed of 0.4 μm / minute. Take-up. Thereafter, the heater was used to set the temperature to 1] 0 ° C and the collision treatment was performed under the conditions of 120 cc / min of argon gas and 0.9 kw of output power, so that the water content of the polymer film was not Vacuum drying was performed at a total of 0.01%. Next, Ni was installed on the first target and the second target in the room, and Ni was sputtered using high magnetic wave magnetrons with 200cc / min of argon and 8kw of output power. The polymer films were vacuum-dried. A base layer 102 having a thickness of 1 800 A is formed on the surface. After that, the polymer film thus formed with the base layer was taken out of the sputtering apparatus, and then mounted to a continuous plating apparatus. In a plating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 m / min, so that the above-mentioned base layer was subjected to acid activation treatment. Secondly, after washing twice, the electroplating bath in the above device was filled with a plating solution (from 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, and 20 g of ferrous sulfate / Liter and Ferroallog FA (made by Ebaraudilite (stock)) 70cc / 彳, PΗ3 · 8), and the polymer film was continuously immersed at a moving speed of 1.0m / min, and the liquid temperature was 55t, and the current density was 4 Under the condition of A / dm2 plating for 5 minutes, a mask consisting of an alloy of Ni and Fe (Ni: Fe = 70: -18- (16) 1225768 3 〇) with a thickness of 4.3 μm can be formed on the aforementioned base layer 102. Layer I 03. Next, it was repeatedly washed with water 3 times and drained, and dried at 6 ° C for 1 minute to obtain the electromagnetic wave masking material shown in Fig. 1. The electromagnetic wave masking material thus processed was irradiated with an electromagnetic wave of 100 to 200 Hz while moving. The oscilloscope is used to detect 100 to 200 Hz on the surface that is not irradiated with electromagnetic waves. Therefore, the electromagnetic wave masking material obtained above can be used as a low-frequency magnetic wave masking material for various purposes. Furthermore, the electromagnetic wave masking is flexible. It is also excellent, so it is used in various products that are thin, thin, and short. (Example 2) This example is about forming a base layer with a chemical effect on the surface of a polymer film, and forming a second layer that functions as an electrode on it. An electromagnetic wave of a masking layer made of Cu is formed thereon. Hereinafter, it will be described with reference to FIG. 2. A 25 μm-thick PET film having a thickness of 25 μm and a length of 100 m as a polymer film 201 is made of stainless steel. The manufactured core was pre-assembled to the delivery shaft in the sputtering equipment room, and the polyimide tape of the front end adhesive was installed to the take-up shaft. After that, a vacuum of 4 X 1 0_2Pa was made in the room. After the state, the cooling drum, the delivery shaft and the take-up shaft are respectively rotated with the polymer film as the speed of C. After that, the temperature is set to 1 by the heater and the argon by the heater. 20 cc / min, output power 0. The electromagnetic wave is measured by blowing the phase vibrator of the present invention. The electric shielding material used for the data can also be widely used to prevent the oxygen two-layer substrate shielding material film from being cut into coils. Drive the device with a vacuum pump at .4 m / min at 10 ° C and 9 kw under -19- (17) (17) 1225768 for collision treatment, so that the water content of the polymer film is less than 0.0 Vacuum drying is performed at 1%. Next, the first target of Cr is assembled in the above room, and C r is spattered under the conditions of 100 cc / min of argon and output power of 2.2 kw. On the surface of the polymer film 201, a base layer 204 having an anti-oxidation effect with a thickness of 70 A was formed. Next, Cu was assembled as the second target in the above room, and Cu was sputtered under the conditions of 200 cc / min of argon and an output of 9 kw. On the aforementioned substrate with anti-oxidation effect A second base layer 202 serving as an electrode having a thickness of 2100 A was formed on 204. Thereafter, the polymer film thus formed as the base layer was taken out of the sputtering apparatus, and then installed to a continuous plating apparatus. The plating was filled with 5% sulfuric acid In the bath, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 m / min, so that the second base layer 202 was subjected to acid activation treatment. Next, after repeated washing for 2 times, the above device was used. The electroplating bath is filled with an electroplating bath (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of chlorine, and TopIut] na 380H (manufactured by Okuno Pharmaceutical Co., Ltd.); [0cc / L (Constructed) 'and continuously dip the above polymer film at a moving speed of 1.0 m / min' and electroplating for 4 minutes at a liquid temperature of 29 ° C and a flow density of 4A / dm2 'can be used in the second A masking layer 203 made of C11 having a thickness of 3.5 μm was formed on the base layer 202. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 600 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention shown in FIG. 2. When the electromagnetic shielding material obtained in this way was measured using an oscilloscope while using a phase-shift vibrator-20- (18) 1225768 while irradiating electromagnetic waves of 1 to 2 GHz, 1 ~ 2 gigahertz of electricity; magnetic waves. Therefore, the electromagnetic wave masking material obtained as described above can be used as an electromagnetic wave masking material for high frequency applications in various applications. In addition, since this electromagnetic shielding material is excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter.

(Example 3) This example is about forming a base layer having an oxidation prevention effect on the surface of a polymer film, and forming a second base layer functioning as an electrode on the surface of the polymer film. A masking layer, and an electromagnetic wave masking material for preventing a discoloration layer is formed thereon. Hereinafter, it will be described with reference to FIG. 3.

First, until a masking layer made of Cu is formed, it is completely treated in the same manner as in Example 2 above, and a polymer film 3 01 is formed to form a masking layer 3 0 3. Next, the plating bath of a continuous plating apparatus was filled with a plating solution (made of Sn 5 5 g / L, Metas AM (made by Uken Industrial Co., Ltd.) 120 g / L as an organic acid, and SBS-R (Uken Industrial ( 60cc / liter), the polymer film is continuously dipped at a moving speed of 1.0m / min, and electroplated for 1 minute at a liquid temperature of 30 ° C and a current density of 2A / dm2. A discoloration preventing layer 3 of 0.5 μm thick S η was formed on the masking layer 3 0 3, and then washed three times with water, and then dried with a hair dryer source water at 60 ° C for 1 minute to obtain The electromagnetic wave masking material of the present invention shown in Fig. 3. The electromagnetic wave masking material obtained in this way is used with a phase-shift vibrator-21-(19) (19) 1225768-while irradiating electromagnetic waves of 1 to 2 GHz, using an oscilloscope During the measurement, '1 to 2 gigahertz of electromagnetic waves were not detected on the side where the electromagnetic waves were not irradiated. ® 1ft' ± The electromagnetic wave shielding material described above can be used as a calcium carbide shielding material for high-frequency applications and used in various applications. , The electromagnetic wave masking material due to gastric α It is also excellent, so it can be widely used in various thin and light products (Example 4) This example is about forming a base layer with an anti-oxidation effect on the surface of a polymer film, and forming three masking layers on it A shielding material for electromagnetic waves. Hereinafter, it will be described with reference to FIG. 4. A 25 μm thick PET film as a polymer film 401 is cut into a width of 250 mm and a length of 100 mm, and then wound with a stainless steel core. And assembled to the delivery shaft in the sputtering equipment room, and the front end of the sputtering shaft was attached to the take-up shaft with a polyimide tape with an adhesive. Then, the room was made into a vacuum of 4 X 1 〇〃Pa by a vacuum pump. After that, the driving drum, the feeding shaft and the winding shaft with the cooling device were rotated around the polymer film at a speed of 0.4m / min. After that, the temperature was set to 110 ° C by a heater. Then, the collision treatment was performed under the conditions of 120 cc / min of argon gas and 0.9 kw of output power, and the polymer film was dried under vacuum so that the water content of the polymer film was less than 0.0 1%. First and second Ni was separately assembled, and Ni was sputter-plated using a high magnetic wave magnetron with 200cc / min of argon and 8kw of output power, and the polymer film 40 1 -22- (20) (20) 1225768 was vacuum-treated on the surface. A base layer having an anti-oxidation effect having a thickness of 1 800 A is formed thereon. Thereafter, the polymer film thus formed with the base layer having an anti-oxidation effect is taken out of the sputtering device, and then mounted to a continuous electroplating device. The electroplating bath is filled with electroplating bath (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and Feri'oallog FA (Ebaraudilite (shares ）) 70 cc / / 'PH3.8), and the polymer film was continuously immersed at a moving speed of kOm / min' and electroplated at a liquid temperature of 55 ° C and a current density of 4A / dm2 5 In a minute, a first masking layer 4 0 3 a made of an alloy of Ni and Fe with a thickness of 4.5 μm can be formed on the base layer 4 0 4 having the effect of preventing oxidation. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 60 ° C for 1 minute. Next, the electroplating bath of the continuous electroplating device was filled with a plating solution (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of atmosphere, and Toplutina 380 H (manufactured by Okuno Pharmaceutical Co., Ltd.) 10cc / liter), and the polymer film was continuously immersed at a moving speed of 1.0m / min, and electroplated at a liquid temperature of 29 ° C for 4 minutes at a flow density of 4 A / dm2, Then, a second masking layer 4 03 b made of C11 having a thickness of 3.5 μm can be formed on the first masking layer 4 03 a. Then, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 600 ° C for 1 minute. Furthermore, the electroplating bath of the continuous electroplating device was filled with a plating solution (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and Ferroallog FA ( The above) is composed of 70cc / f, ρΗ3 · 8), and the polymer film is continuously immersed at a speed of 1.0 m / min-23- (21) (21) 1225768, and the liquid temperature is 5 5 ° C And electroplating at a current density of 4 A / d m2 for 5 minutes, a third masking layer 4 composed of an alloy of Ni and Fe can be formed on the aforementioned second masking layer 4 03 b with a thickness of 4.4 μm. 3 c. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 60 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention shown in FIG. 4. The electromagnetic wave masking material obtained in this way was measured with an oscilloscope while irradiating electromagnetic waves of 1000 to 2000 Hz and 1 to 2 gigahertz using a phase shift vibrator, but it was not detected on the surface that was not irradiated with electromagnetic waves. Electromagnetic waves of 100 to 200 Hz and 1 to 2 gigahertz are emitted. Therefore, the electromagnetic wave masking material obtained above can be used as an electromagnetic wave masking material for both low-frequency and high-frequency waves, and can be used in various applications. In addition, since the electromagnetic wave shielding material is also excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter. (Embodiment 5) This embodiment relates to an electromagnetic wave masking material in which a masking layer is formed on both surfaces of a polymer film. Hereinafter, it will be described with reference to FIG. 5. A 25 μm-thick PET film as a polymer film 501 was cut into a width of 250 mm and a length of 100 m, and was wound with a core made of stainless steel, and assembled into a delivery shaft in a sputtering device chamber. The front end is attached to the take-up shaft with a polyimide tape with an adhesive. After that, the chamber was made into a vacuum of 4 X 1 0_2 Pa by a vacuum pump, and the driving drum, the sending shaft, and the winding shaft with a cooling device were respectively rotated around the polymer film at a speed of 0.4 m / min. After that, the heater was used to make the temperature Π 0 ° C, and the collision processing was performed under the conditions of -24-(22) (22) 1225768 under the condition of argon I 20cc / min and output power 0.9kw. The polymer film was vacuum dried so that the water content of the polymer film was less than 0.01%. Next, Ni was assembled on the first target and the second target in the above room, and Ni was sputter-plated using high magnetic wave magnetrons each having an argon gas of 200 cc / min and an output power of 8 kw. The film 5 0 1 was formed with a base layer 504 having an oxidation preventing effect to a thickness of 1 800 A. Thereafter, the polymer film thus formed with the base layer having an oxidation preventing effect was taken out of the sputtering apparatus, and then mounted to continuous plating. Device. In the electroplating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of i. Om / minute, so that the above-mentioned base layer having an oxidation prevention effect was subjected to acid activation treatment. Next, after washing twice, the electroplating bath was filled with electroplating solution (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of chlorine, and dioplutina 380H (manufactured by Okuno Pharmaceutical Co., Ltd.)) 10cc / liter), and continuously dip the above polymer film at a moving speed of 1.0m / min, and electroplating for 4 minutes at a liquid temperature of 29 ° C and a flow density of 4A / dm2, the above A first masking layer 50 3 a made of Cu having a thickness of 3.5 μm is formed on the base layer 504 having an oxidation prevention effect. Then, it was repeatedly washed with water 3 times, drained with a hair dryer, and then dried at 60 ° C for 1 minute. Next, the plating bath of the continuous plating apparatus was filled with a plating solution (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and F e 1 r 〇a 11 〇g FA (E ba 1. audi 1 ite (made by -25- (23) 1225768)) 70cc / 彳, ρΗ3 · 8), and the above polymer is 1.0m / min thin Continuous immersion at a moving speed, and electroplating for 5 minutes at a liquid temperature of 55 ° C and an electric power of 4A / dm2, an alloy of Ni and Fe with a thickness of 4.5 μm can be formed on the first mask 5 0 3 a. Structure a second masking layer 503b. Then, it was washed 3 times with water, dried with a hair dryer and then dried at 60 ° C for 1 minute. Furthermore, the polymer film thus formed with the second masking layer is further processed on the other side and is again mounted to the sputtering device. Secondly, the first and second targets of the device are equipped with Ni, and high magnetic wave magnetron plating of 200 cc / min and 8 kw of argon is applied on the other surface of the polymer film 501. A base layer 502 of 1800A is formed. Thereafter, the polymer film thus formed as the base layer is taken out by sputtering and then mounted on a continuous plating apparatus. In a bath filled with 5% sulfuric acid, the above polymer film was continuously stained at a moving speed of 1.0 m / min for 1 minute, so that the above-mentioned base layer was subjected to acid activation treatment. Secondly, after 2 times of water washing, fill the plating bath of the above apparatus with electroplating bath (consisting of 240 g / liter of nickel, 50 g / liter of nickel chloride, 40 g of boric acid / 20 g / liter of ferrous acid ferrite / liter and Ferroallog FA (Constructed by Ebaraudilite (manufactured by) 70cc ", PH3.8), and continuously dipping the polymer at a speed of .0m / minute, and at a liquid temperature of 55 ° C and an electric power of 4 A / dm2 A lower masking layer 5 0 3 c composed of an alloy of Ni and F e (N i: F e = 3) with a thickness of 4 · 3 μm can be formed on the aforementioned base layer for 5 minutes under the electroplating. Next, the water was washed repeatedly. The film was drained with a flow-tight masking layer. The continuous sputtering was performed using a tube-sputtered thickness. ) 1225768 Drain with a hair dryer and dry at 60 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention as shown in FIG. 5.

The electromagnetic wave masking material obtained in this way was used with a phase-shift vibrator—while irradiating electromagnetic waves of 100 to 200 Hz and 2 GHz to 2 GHz, respectively, and when measuring with an oscilloscope, it was not detected on the side where the electromagnetic wave was not radiated Electromagnetic waves of 100 to 20 GHz and 1 to 2 gigahertz are emitted. Therefore, the electromagnetic wave masking material obtained above can be used as an electromagnetic wave masking material for both low-frequency and high-frequency waves, and can be used in various applications. In addition, since the electromagnetic wave shielding material is also excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter. (Example 6)

In the above-mentioned embodiments 1, 2, 3, 4, and 5, except that the ion gun is used to irradiate ions as a pretreatment, instead of the collision treatment performed on the polymer film, the other processes are completely the same as those in this embodiment to obtain electromagnetic waves. Masking material. Specifically, in each embodiment, a sputtering device using an ion gun is used instead of a heater collision processing section installed in the sputtering device, and the gas is 100 cc / minute, the power is 0.5 kw / dm2, and the vacuum is 2 x l0. _] Under the conditions of pa, irradiated with argon ions for pretreatment. Although each of the electromagnetic wave masking materials obtained in this way has the same masking effect as that of Examples 1, 2, 3, 4, and 5, the adhesion between the polymer film, the substrate, and the masking layer is further improved. Therefore, 'can make the applicable range of various products more broad. -27- (25) (25) I225768 Industrial Applicability The electromagnetic wave masking material of the present invention has a deep flexible property by reducing its thickness, so it can also cope with various products that are thinner and shorter. In addition, the electromagnetic wave masking material of the present invention can simultaneously shield both low frequency and high frequency electromagnetic waves if necessary. [Brief description of the drawings] FIG. 1 is a schematic cross-sectional view of an electromagnetic wave masking material in which a base layer is formed on a surface of a polymer film and a masking layer is formed thereon. Fig. 2 is a schematic cross-sectional view of an electromagnetic wave shielding material in which a base layer having an oxidation prevention effect is formed on a surface of a polymer film, a second base layer serving as an electrode is formed thereon, and a masking layer is formed thereon. FIG. 3 shows the formation of a base layer having an anti-oxidation effect on the surface of a polymer film, and a second base layer serving as an electrode is formed thereon, a masking layer is formed thereon, and a discoloration preventing layer is formed thereon. A schematic cross-sectional view of an electromagnetic wave shielding material. Fig. 4 is a schematic cross-sectional view of an electromagnetic wave masking material in which a base layer having an oxidation prevention effect is formed on the surface of a polymer film, and three masking layers are formed thereon. Fig. 5 is a schematic cross-sectional view of an electromagnetic wave masking material in which a masking layer is formed on both surfaces of a polymer film. [Comparison of essential components] -28- (26) 1225768 10 1 Polymer film 1 02 Base layer 1 03 Masking layer 20 1 Polymer film 202 Base layer 203 Masking layer 204 Base layer 3 0 1 Polymer film 3 02 Base Layer 303 Masking layer 304 Base layer 305 Discoloration preventing layer 40 1 Polymer film 4 03 a First masking layer 4 03 b Second masking layer 4 0 3 c Third masking layer 404 Base layer 501 Polymer film 502 Base layer 5 0 3 a first masking layer 5 0 3 b second masking layer 5 0 3 c third masking layer 504 base layer

-29-

Claims (1)

(1) 1225768 Patent application scope 1. An electromagnetic wave shielding material characterized in that the thickness of the surface of the polymer film is 1 to 8 mm, and it contains at least one kind of Ni, Co, Ti, Zn, Ct A masking layer composed of one selected from the group consisting of Sn, Cu, and alloys of these metals is formed by one of two or more layers by a sputtering method, a vapor deposition method, or a plating method. 2. The electromagnetic wave masking material as described in item 1 of the patent application, in which the polymer film is pre-treated by irradiating ions with an ion gun. 3. For example, the electromagnetic wave masking material in the first patent application scope is between the surface of the polymer film (101) and the masking layer (103) so that the thickness is 1 μm or less, and it contains at least one kind of Ni, Co, and Zn. , Fe,, T i, C ι ·, a group of metal oxides, nitrides, and alloys of these metals selected from the group consisting of a base layer (1 02), which is the base ore method or steam Any one of the plating methods is used to form one or more layers. 4. For the electromagnetic wave masking material in the third item of the patent application, the _ψ masking layer (103) is selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and their metals. 5. For example, the electromagnetic wave masking material in the scope of patent application No. 3, wherein the masking layer (103) is formed into two layers, one of which is composed of Cu, and the other is self-contained at least one kind of N], Co, Fe and One is selected from the group consisting of alloys of their metals. 6. If the electromagnetic wave masking material in the scope of the patent application No. 5 is formed on the masking layer composed of Cu, a discoloration prevention layer composed of Sn, Ni, Co, Ti, Zn or Cr is formed. -30- (2) (2) 1225768 7 · If the electromagnetic wave masking material of the third item of the patent application, the masking layer (403a, 403b, 403c) is formed into three layers separately, and the intermediate layer of the three layers is formed by Cu The layer is composed, and the layer is sandwiched above and below to form a layer composed of one selected from the group consisting of an alloy of at least one kind of Ni, Co ·, Fe, and these metals. 8 · If the electromagnetic wave masking material in the first patent application scope is between the surface of the polymer film (201) and the masking layer (203), the thickness is less than 1 μm, and it contains at least one kind of Ni, Co, Zn , Ti, Cr, oxides, nitrides of these metals, and alloys of these metals are selected from the group consisting of a sputtering method or an evaporation method to prevent oxidation A base layer (204) having a thickness of 1 μm or less and selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, Cu and their metals, and is formed by a weaving method or an evaporation method. The base layer (200) formed by any method serves as an electrode, and is formed in this order. 9 · The electromagnetic wave masking material according to item 8 of the patent application, wherein the masking layer (203) is made of Cu. 10. For the electromagnetic wave masking material in the scope of the patent application No. 9, # is to form a discoloration prevention layer (305) composed of Sn, Ni, Ti, Zn or Cr on the masking layer (303) composed of Cu. 11. For example, the electromagnetic wave masking material ^ _ ψ masking layer (203) of the scope of the patent application is formed into two separate layers, one of which is composed of Cu, and the other is self-contained at least one kind of Ni, C0, One is selected from the group consisting of Fe and their alloys. -31-(3) 1225768 1 2 · If the electromagnetic wave masking material in the scope of the patent application No. Π, it is formed on the masking layer (303) made of Cu to form Sn, Ni, Co, T i, Z η or Discoloration prevention layer (305) composed of Cm. 1 3 · If the electromagnetic wave masking material in the eighth item of the patent application, the # ψ masking layer is formed into three layers separately, and the intermediate layer of the three layers is to form a layer composed of Cu, and the layer is sandwiched above and below it. A layer composed of one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and their metals is formed. 1 4 · An electromagnetic wave shielding material is characterized in that it is on the surface of any polymer film (501), the thickness is 1 μ 厚度 or less, and it contains at least one kind of N !, Co, Zn, Fe, Cu, Ti, Cr, One kind is selected from the group consisting of oxides, nitrides, and alloys of their metals; the base layer is formed into one layer or by any one of a plating method or an evaporation method; and two or more layers, and A first masking layer (503a) selected from the group consisting of at least one N !, Co, Fe, and their metal alloys is formed thereon, and a second masking layer consisting of Cu is formed thereon. Layer (503), and on the other surface of the polymer film (501), the thickness is ιμιη or less, and it contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Ci., Etc. A base layer (50 2) composed of one selected from the group consisting of metal oxides, nitrides, and alloys of these metals is formed into one or more layers by any one of a sputtering method and an evaporation method, and Formed thereon a metal containing at least one of Ni, Co, Fe and their metals. Third masking layer (5 0 3 c) consisting of one kind of metal selected from the group consisting of. 15. If the electromagnetic wave masking material of item 14 of the scope of patent application, the polymer film in -32- (4) 1225768 is pre-treated by irradiating ions with an ion gun. 16. The electromagnetic wave masking material according to item 14 of the scope of patent application, which is a discoloration prevention layer composed of Sn, ytterbium, Co, Tl, Zn, or Cr on a masking layer composed of Cu. 1 7. An electromagnetic wave shielding material, characterized in that it has a thickness of 1 μm or less on the surface of any polymer film (501), and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, A base layer composed of one of the group consisting of oxides, nitrides, and alloys of these metals is selected to form one or two or more layers by any one of a sputtering method and an evaporation method. A first masking layer (503a) made of Cu is formed, and a second masking layer (50) selected from the group consisting of an alloy containing at least one kind of Ni, Co, Fe and their metals is formed thereon. 3 b), and on the other surface of the polymer film (501), the thickness is 1 μm or less, and it contains oxides of at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, these metals, A base layer (502) selected from a group consisting of nitrides and alloys of these metals is formed by one or two or more layers by any of a sputtering method or a vapor deposition method, and a self-contained at least one layer is formed thereon. Group consisting of an alloy of Nl, Co, Fe and their metals Selecting one kind of a third masking layer (503c) is formed. 18. The electromagnetic wave masking material according to item 17 of the patent application scope, wherein the polymer film is pre-treated by irradiating ions with an ion gun. -33-