TW200417309A - Electromagnetic shielding material to form shielding layer - Google Patents
Electromagnetic shielding material to form shielding layer Download PDFInfo
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- TW200417309A TW200417309A TW92127041A TW92127041A TW200417309A TW 200417309 A TW200417309 A TW 200417309A TW 92127041 A TW92127041 A TW 92127041A TW 92127041 A TW92127041 A TW 92127041A TW 200417309 A TW200417309 A TW 200417309A
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- layer
- masking
- electromagnetic wave
- metals
- polymer film
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- 239000000463 material Substances 0.000 title claims abstract description 82
- 229920006254 polymer film Polymers 0.000 claims abstract description 97
- 239000002184 metal Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 56
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 54
- 239000000956 alloy Substances 0.000 claims abstract description 54
- 150000002739 metals Chemical class 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 47
- 229910052742 iron Inorganic materials 0.000 claims abstract description 46
- 238000004544 sputter deposition Methods 0.000 claims abstract description 40
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 22
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 18
- 238000007740 vapor deposition Methods 0.000 claims abstract description 18
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 15
- 229910052718 tin Inorganic materials 0.000 claims abstract description 8
- 230000000873 masking effect Effects 0.000 claims description 163
- 230000000694 effects Effects 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 claims description 23
- 238000009713 electroplating Methods 0.000 claims description 16
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 238000004649 discoloration prevention Methods 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 210000002784 stomach Anatomy 0.000 claims description 2
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- 150000001875 compounds Chemical class 0.000 claims 1
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- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 221
- 238000007747 plating Methods 0.000 abstract description 40
- 239000002356 single layer Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 50
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 37
- 239000010949 copper Substances 0.000 description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 25
- 239000010408 film Substances 0.000 description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 18
- 239000007788 liquid Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000002265 prevention Effects 0.000 description 10
- 229920002725 thermoplastic elastomer Polymers 0.000 description 9
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 7
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 7
- 239000004327 boric acid Substances 0.000 description 7
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 7
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 7
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 7
- 229920003002 synthetic resin Polymers 0.000 description 7
- 239000000057 synthetic resin Substances 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000011790 ferrous sulphate Substances 0.000 description 6
- 235000003891 ferrous sulphate Nutrition 0.000 description 6
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 6
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 239000005060 rubber Substances 0.000 description 6
- 238000001291 vacuum drying Methods 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920002799 BoPET Polymers 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000009975 flexible effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920000800 acrylic rubber Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
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- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
- H05K9/0084—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
Abstract
Description
200417309 (1) 玖、發明說明 【發明所屬之技術領域】 本發明爲關於電磁波掩蔽材料。更詳言之，關於安裝 於各種通信機、電腦、家電製品或汽車和電線等，且有效 掩蔽彼等所發生之各種雜訊等電磁波不會釋出至外部，並 且有效掩蔽其他發生源對彼等照射之電磁波不會侵入內部 的電磁波掩蔽材料。200417309 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to an electromagnetic wave shielding material. In more detail, electromagnetic waves such as those installed on various telecommunications machines, computers, home appliances, automobiles, and electric wires, etc., which effectively mask various noises generated by them, will not be released to the outside, and will effectively mask other sources of interference. The irradiated electromagnetic waves will not penetrate the electromagnetic shielding material inside.
【先前技術】[Prior art]
自以往’已知來自通信機、電腦、家電製品、汽車、 電線等之具有各種周波數的電磁波爲以雜訊型式等發生。 此些電磁波已知成爲其他電氣製品產生錯誤動作的原因並 且對人體產生不良影響。因此嘗試以各式各樣之方法將其 掩蔽。例如，低周波數之電磁波的掩蔽對策，自以往爲使 用經壓拉的鐵帶和鐵素體，但其爲笨重且體積龐大，故難 以應用於近年之輕薄短小化的各種製品。另一方面，高周 波數之電磁波的掩蔽對策爲使用對合成樹脂薄膜貼合銅箔 ，其雖於上述鐵帶等可變薄至某程度之厚度，但於製造薄 銅箔上有極限，難以廉價製造9 μπί以下的厚度。因此， 在使用於近年之輕薄短小化之製品之情況中，特別在使用 於要求可撓性之用途之情況中，期望更加提高其性能。又 ，於此些先前之掩蔽對策手段中’並無法同時應付低周波 數及高周波數兩者。 還有，於特開2 0 0 0 - 2 1 2 3 1 5號公報中，記載於高分子 -4- (2) 200417309 薄膜上以真空蒸鑛法形成金屬所構成之掩蔽層的電磁波掩 蔽材料。但是，其係經由真空蒸鍍法形成掩蔽層，故於形 成厚掩蔽層上則伴隨著困難，並且無法達成充分的掩蔽效 果。From the past, it has been known that electromagnetic waves having various frequencies from communication devices, computers, home appliances, automobiles, electric wires, and the like are generated in a noise pattern or the like. These electromagnetic waves are known to cause erroneous actions of other electrical products and have an adverse effect on the human body. So try to cover it up in a variety of ways. For example, countermeasures for masking electromagnetic waves with a low frequency have conventionally used compression-pulled iron belts and ferrites, but they are bulky and bulky, making them difficult to apply to various products that have become thinner and shorter in recent years. On the other hand, masking countermeasures for electromagnetic waves with high frequency are to use a copper foil bonded to a synthetic resin film. Although it can be thinned to a certain thickness in the above-mentioned iron tapes, etc., it is limited in the production of thin copper foil and it is difficult to be cheap. Manufactured to a thickness of 9 μπί or less. Therefore, in the case of using thin, thin and short products in recent years, and particularly in the case of applications requiring flexibility, it is desired to further improve its performance. Also, in these previous masking countermeasures, it is not possible to cope with both the low frequency and the high frequency. In addition, in JP-A No. 2000- 2 1 2 3 1 5, an electromagnetic wave masking material described in a polymer-4- (2) 200417309 film is used to form a masking layer made of a metal by a vacuum evaporation method. . However, since a masking layer is formed by a vacuum evaporation method, it is difficult to form a thick masking layer, and a sufficient masking effect cannot be achieved.
又，於特開2 00 1 - 1 4 3 644號公報中，記載於導電層和 低導電層所構成之多層構造的最外層形成電極膜的電磁波 掩蔽材料。但是，因爲最外層之電極膜爲僅以利用真空處 理的濺鍍法等所形成，故於形成厚掩蔽層上伴隨著困難， 並且無法達成充分的掩蔽效果。 又’於特開2 0 0卜2 0 0 3 7 6號公報中，記載以物理蒸鍍 形成第一金屬層，並於其上將第二金屬層予以電鍍的電磁 波掩蔽材料。但是，以第一金屬層所造成的防止氧化效果 不夠充分’且第二金屬層爲因氧化而惡化且具有剝離的可 能性’無法達成充分的掩蔽效果。Further, in Japanese Patent Application Laid-Open No. 2000-1-1 4 3 644, an electromagnetic wave shielding material for forming an electrode film in an outermost layer of a multilayer structure composed of a conductive layer and a low-conductivity layer is described. However, since the outermost electrode film is formed only by a sputtering method using a vacuum process or the like, it is difficult to form a thick masking layer, and a sufficient masking effect cannot be achieved. Furthermore, in Japanese Patent Application Laid-Open No. 2000b 2036, an electromagnetic wave shielding material is described in which a first metal layer is formed by physical vapor deposition and a second metal layer is plated thereon. However, a sufficient masking effect cannot be achieved with the insufficient oxidation prevention effect by the first metal layer 'and the second metal layer being deteriorated by oxidation and having the possibility of peeling'.
•又，於特開2 002 - 1 9 8 6 8 1號公報中，記載於樹脂所構 成之基質材料表面形成電鍍被膜的電磁波掩蔽材料。但是 ’因爲於該基質材料上直接形成電鍍被膜，故基質材料與 電鍍被膜的密合性弱，且剝離並且無法達成充分的掩蔽效 果。 【發明內容】 本發明爲鑑於如上述之現狀，其目的爲在於提供可應 付輕薄短小化之各種製品並且經由將其厚度變薄而深具可 撓性性狀的電磁波掩蔽材料。又，本發明之其他目的爲在 -5- (3)200417309 於提 時予 以先 全新 究， ，令 、Ζ η 少一 一種 與掩 Ni、 金屬 濺鍍 與掩 Ni、 金屬 法或 底層 F e、 成， 供視需要對於低周波數及高周波數兩者之電磁波可同 以掩蔽的電磁波掩蔽材料。 本發明者爲了解決上述課題而重覆致力硏究時，發現 前掩蔽層之形成方法乃難以解決上述課題，必須以完 穎的形成方法形成掩蔽層，並且根據此發現再繼續硏 進而完成本發明。 即’本發明之電磁波掩蔽材料爲於聚合物薄膜之表面 厚度爲1〜8μηι，且由含有至少一種Ni、Fe、Co、Ti 、Cr、Sn、Cu及彼等金屬之合金所組成群中選出至 種所構成的掩蔽層，以濺鍍法、蒸鍍法或電鍍法之任 方法形成一層或二層以上爲其特徵。 又’本發明之電磁波掩蔽材料爲於聚合物薄膜之表面 蔽層之間，令厚度爲1 μηι以下，且由含有至少一種 Co、Zn、Ti、Cr、彼等金屬之氧化物、氮化物及彼等 之合金所組成群中選出至少一種所構成的基底層，以 法或蒸鍍法之任一種方法形成一層或二層以上。 又’本發明之電磁波掩蔽材料爲於聚合物薄膜之表面 敝層之間，令厚度爲】μηι以下，且由含有至少一種 Co、Zn、Ti、Cr、彼等金屬之氧化物、氮化物及彼等 之合金所組成群中選出至少一種所構成，並且以濺鑛 蒸鍍法之任一種方法所形成之具有防止氧化效果的基 ’與厚度爲Ιμηι以下，且由含有至少一種Ni、Co、 C u及彼等金屬之合金所組成群中選出至少一種所構 並且濺鑛法或蒸鍍法之任一種方法所形成之作用爲電• In Japanese Patent Application Laid-Open No. 2 002-1 9 8 6 8 1, an electromagnetic wave shielding material is described in which a plating film is formed on the surface of a substrate made of resin. However, since the plating film is directly formed on the matrix material, the adhesion between the matrix material and the plating film is weak, and the masking effect cannot be achieved by peeling. [Summary of the Invention] The present invention has been made in view of the current situation as described above, and an object thereof is to provide an electromagnetic wave shielding material capable of coping with various products that are thinner, thinner, and more flexible by reducing the thickness thereof. In addition, the other object of the present invention is to make a new study at the time of -5- (3) 200417309, so that there is one less Z η and Ni masking, metal sputtering and Ni masking, metal method or bottom layer F e If necessary, it can be used as a masking material for electromagnetic waves of both low frequency and high frequency. When the present inventors repeatedly studied in order to solve the above-mentioned problems, it was found that the formation method of the front masking layer is difficult to solve the above-mentioned problems. The masking layer must be formed by a perfect formation method, and based on this discovery, the present invention is continued to complete the present invention. . That is, the electromagnetic wave shielding material of the present invention is selected from the group consisting of an alloy containing at least one kind of Ni, Fe, Co, Ti, Cr, Sn, Cu, and other metals on the surface thickness of the polymer film. The masking layer composed of the above-mentioned species is characterized in that one or two or more layers are formed by any of a sputtering method, a vapor deposition method, and a plating method. Also, the electromagnetic wave shielding material of the present invention is between the surface shielding layer of the polymer film, and the thickness is 1 μm or less, and is composed of oxides, nitrides, and oxides containing at least one kind of Co, Zn, Ti, Cr, and other metals. At least one kind of base layer is selected from the group consisting of these alloys, and one or two or more layers are formed by any one of a method and a vapor deposition method. Also, the electromagnetic wave shielding material of the present invention is between the surface lamellae of the polymer film, so that the thickness is less than μηι, and is composed of oxides, nitrides, and oxides containing at least one kind of Co, Zn, Ti, Cr, and other metals. At least one selected from the group consisting of these alloys, and has a base having an oxidation prevention effect formed by any method of sputter evaporation method and having a thickness of 1 μm or less, and comprising at least one kind of Ni, Co, At least one structure selected from the group consisting of Cu and their alloys and the effect formed by any one of the ore-spattering method or the evaporation method is electricity.
-6- (4) 200417309 極的基底層，爲分別以此順序形成。 又，本發明之電磁波掩蔽材料爲以含有至少一種Ni 、C 0、F e及彼等金屬合金所組成群中選出一種構成掩蔽 層。 又’本發明之電磁波掩蔽材料爲以Cu構成掩蔽層。-6- (4) 200417309 base layers are formed in this order. In addition, the electromagnetic wave masking material of the present invention is a masking layer selected from the group consisting of at least one kind of Ni, Co, Fe, and their metal alloys. Furthermore, the electromagnetic wave masking material of the present invention is a masking layer made of Cu.
又，本發明之電磁波掩蔽材料爲分開形成二層掩蔽層 ’其一者爲以Cu所構成’另一者爲以含有至少一種Ni、 C 0、F e及彼等金屬之合金所組成群中選出一種所構成。 又’本發明之電磁波掩蔽材料爲分開形成三層掩蔽層 ’該三層之中間層爲由C11所形成之層，並將該層夾住且 於其上下形成含有至少一種Ni、Co、Fe及彼等金屬之合 金所組成群中選出一種所構成的層。 又，本發明之電磁波掩蔽材料爲於聚合物薄膜之任一 者表面，令厚度爲Ιμηι以下，且含有至少一種Ni、Co、In addition, the electromagnetic wave shielding material of the present invention is formed by forming two shielding layers separately, 'one of which is composed of Cu' and the other of which is composed of an alloy containing at least one kind of Ni, C 0, F e and their metals. Choose a composition. Also, the electromagnetic wave shielding material of the present invention is formed into three masking layers separately. The intermediate layer of the three layers is a layer formed of C11, and the layer is sandwiched and formed above and below the layer containing at least one kind of Ni, Co, Fe, and One layer is selected from the group consisting of alloys of their metals. In addition, the electromagnetic wave shielding material of the present invention is on any surface of a polymer film, has a thickness of 1 μm or less, and contains at least one kind of Ni, Co,
Ζ η、F e、C u、T i、C r、彼等金屬之氧化物、氮化物及彼等 金屬之合金所組成群中選出一種所構成的基底層爲以濺鍍 法或黑鑛法之任一種方法形成一層或二層以上，並於其上 形成含有至少一種Ni、Co、Fe及彼等金屬之合金所組成 群中選出一種所構成的第一掩蔽層，且再於其上形成由 Cu所構成之層，並且於該聚合物薄膜之另一者表面，令 厚度爲Ιμηι以下，且含有至少一種Ni、Co、Zn、Fe、Cu 、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金屬之合金 所組成群中選出一種所構成的基底層爲以濺鍍法或蒸鍍法 之任一種方法形成一層或二層以上，並於其上形成含有至 -7 - (5) 200417309 少一種Ni、Co、Fe及彼等金屬之合金所組成群中選出一 種所構成的第三掩蔽層。A base layer composed of a group consisting of Zn η, Fe, Cu, Ti, Cr, oxides, nitrides, and alloys of these metals is selected by the sputtering method or the black ore method Either method is used to form one or more layers, and a first masking layer composed of one selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and these metals is formed thereon, and then a first masking layer is formed thereon. A layer made of Cu, on the other surface of the polymer film, to a thickness of 1 μm or less, and containing at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides of these metals, One kind of base layer composed of nitrides and alloys of these metals is selected, and one or two or more layers are formed by any one of sputtering method and evaporation method, and a content of -7-( 5) 200417309 A third masking layer composed of at least one selected from the group consisting of alloys of Ni, Co, Fe, and their metals.
又，本發明之電磁波掩蔽材料爲於聚合物薄膜之任一 者表面，令厚度爲1 以下，且含有至少一種N i、C 〇、 Zn、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮化物及彼等 金屬之合金所組成群中選出一種所構成的基底層爲以濺鍍 法或蒸鍍法之任一種方法形成一層或二層以上，並於其上 形成由Cu所構成的第一掩蔽層，且再於其上形成由含有 至少一種Ni、Co、Fe及彼等金屬之合金所組成群中選出 一種所構成的第二掩蔽層，並且於該聚合物薄膜之另一者 表面’令厚度爲Ιμηι以下，且含有至少一種Ni、c〇、Zn 、Fe、Cn、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金 屬之合金所組成群中選出一種所構成的基底層爲以濺鍍法 或蒸鍍法之任一種方法形成一層或二層以上，並於其上形 成含有至少一種Ni、Co、Fe及彼等金屬之合金所組成群 中選出一種所構成的第三掩蔽胃。 又’本發明之電磁波掩蔽材料爲於Cu所構成的掩蔽 層上，形成由Sn、Ni、Co、丁丨、Zn或Cr所構成的防止 變色層。 【實施方式】 (電磁波掩蔽材料） 本發明之電磁波掩蔽材料於基本上爲於聚合物薄膜之 表面，具有形成掩敝層的構成。以下，說明各構成。 (6) 200417309 (聚合物薄膜）In addition, the electromagnetic wave shielding material of the present invention is on any surface of the polymer film, the thickness is 1 or less, and at least one of Ni, Co, Zn, Fe, Cu, Ti, Cr, and other metals is oxidized. The base layer composed of one selected from the group consisting of metal, nitride and alloys of these metals is formed by forming one or two or more layers by any one of a sputtering method or a vapor deposition method, and Cu is formed thereon. And a second masking layer consisting of one selected from the group consisting of alloys containing at least one of Ni, Co, Fe, and these metals is formed on the first masking layer, and on the other of the polymer film One surface is selected from the group consisting of a thickness of 1 μm or less and containing at least one of Ni, co, Zn, Fe, Cn, Ti, Cr, oxides, nitrides, and alloys of these metals. The formed base layer is one selected from the group consisting of one or two or more layers formed by a sputtering method or an evaporation method, and an alloy containing at least one kind of Ni, Co, Fe, and these metals is formed thereon. The third masks the stomach. Further, the electromagnetic wave masking material of the present invention is a masking layer made of Cu, and a discoloration preventing layer made of Sn, Ni, Co, Ding, Zn, or Cr is formed. [Embodiment] (Electromagnetic wave masking material) The electromagnetic wave masking material of the present invention is basically formed on the surface of a polymer film, and has a structure in which a masking layer is formed. Hereinafter, each configuration will be described. (6) 200417309 (Polymer film)
本發明所用之聚合物薄膜可列舉例如合成樹脂薄膜、 熱塑性彈性體薄膜、橡膠薄膜等。合成樹脂薄膜可列舉例 如PET、PEN、丙烯、尼龍、聚乙烯、聚丙烯、氯乙烯、 聚醯亞胺、液晶聚合物、環氧等之合成樹脂所構成的薄膜 。熱塑性彈性體薄膜可列舉例如苯乙烯系、氯乙烯系、烯 烴系、胺基甲酸乙酯系、酯系、醯胺系等之熱塑性彈性體 所構成的薄膜。又，橡膠薄膜除了天然橡膠以外，可列舉 例如丁二烯橡膠、間戊二烯橡膠、氯間戊二烯橡膠、苯乙 烯-丁二烯橡膠、腈橡膠、丁基橡膠、乙烯-丙烯橡膠、丙 烯橡膠、胺基甲酸乙酯橡膠、氟橡膠、聚矽氧橡膠等之合 成橡膠所構成的薄膜。此處所列舉之合成樹脂、熱塑性彈 性體或橡膠之種類完全僅爲例示，並非限定於此。又，本 發明所謂之薄膜爲包含具有厚度爲2〜200μηι，較佳爲 4〜3 0 μηι的薄片狀形狀。厚度未滿2μηι時，做爲支撐後述 掩敝層之基體機能難以充分，另一方面，超過200 μ m時 ，成爲缺乏可撓性之物質並且難以適應輕薄短小化的製品 ，故均爲不佳。於本發明中，可根據其用途而選擇上述合 成樹脂、熱塑性彈性體或橡膠的種類及厚度。例如，於要 求耐熱性之用途中，選擇聚醯亞胺和液晶聚合物做爲合成 樹脂，且於未要求耐熱性之情形中則以考慮費用等並且選 擇PET等爲適當。又，於要求彈性之情形中則以選擇熱 塑性彈性體和橡膠爲適當。又，對此類聚合物薄膜，以提 (7) 200417309 高強度且賦予難燃效果等爲目的，例如可添加玻璃纖維等 之各種充塡劑類。Examples of the polymer film used in the present invention include synthetic resin films, thermoplastic elastomer films, and rubber films. Examples of the synthetic resin film include films made of synthetic resins such as PET, PEN, acrylic, nylon, polyethylene, polypropylene, vinyl chloride, polyimide, liquid crystal polymer, and epoxy. Examples of the thermoplastic elastomer film include films made of thermoplastic elastomers such as styrene-based, vinyl chloride-based, olefin-based, urethane-based, ester-based, and ammonium-based. Examples of the rubber film other than natural rubber include butadiene rubber, isoprene rubber, chloroprene rubber, styrene-butadiene rubber, nitrile rubber, butyl rubber, ethylene-propylene rubber, Films made of synthetic rubber such as acrylic rubber, urethane rubber, fluorine rubber, and silicone rubber. The types of synthetic resins, thermoplastic elastomers, or rubbers listed here are merely examples and are not limited thereto. The film of the present invention includes a sheet-like shape having a thickness of 2 to 200 μm, preferably 4 to 30 μm. When the thickness is less than 2 μm, it is difficult to fully function as a substrate for supporting the masking layer described later. On the other hand, when it exceeds 200 μm, it becomes a material that lacks flexibility and is difficult to adapt to thinner and shorter products. . In the present invention, the kind and thickness of the synthetic resin, thermoplastic elastomer, or rubber can be selected according to its application. For example, in applications where heat resistance is required, polyimide and liquid crystal polymer are selected as synthetic resins, and when heat resistance is not required, cost and the like are considered, and PET or the like is appropriate. When elasticity is required, it is appropriate to select a thermoplastic elastomer and rubber. In addition, for such polymer films, in order to improve the strength of (7) 200417309 and provide a flame-resistant effect, various fillers such as glass fiber can be added.
還有，本發明所使用之聚合物薄膜爲於形成後述各層 之前，進行乾燥處理令含水量大約爲未滿〇 · 0 1 %爲佳。用 以提局與後述各層，特別是與掩蔽層的密合性。該乾燥處 理方法可依常法實施，可列舉例如於4 0〜2 0 0 °C，較佳爲 40〜〗20°C溫度中加熱之真空狀態（1 x丨〇」〜；[·5 χ 1 〇-】Pa ) 下進行碰撞處理之方法。該碰撞處理之條件爲於Ar氣體 60〜3 00cc/分鐘、較佳爲100〜2〇〇cc/分鐘、輸出功率 0·5〜2kw、較佳爲〇.8〜l.Skw下，使用濺鍍裝置等則可進 行。 又’本發明所用之聚合物薄膜爲使用對於對象物照射 離子的離子槍，且使用照射至少一種離子之離子槍進行前 處理爲佳。此類離子可列舉氬等之稀有氣體離子和氧離子 或氮離子，或其混合離子等。In addition, it is preferable that the polymer film used in the present invention is subjected to a drying treatment to form a water content of less than about 0.01% before the formation of each layer described later. It is used to promote the adhesion between the layers mentioned below, especially the masking layer. This drying treatment method can be carried out according to a conventional method, and examples include, for example, a vacuum state heated at a temperature of 40 to 200 ° C, preferably 40 to 20 ° C (1 x 丨 0 "~; [· 5 χ 1 〇-] Pa) method of collision processing. The conditions for this collision treatment are to use sputtering at 60 to 300 cc / minute, preferably 100 to 2000 cc / minute, output power 0.5 to 2 kw, and preferably 0.8 to 1. Plating equipment and the like can be performed. Further, the polymer film used in the present invention is preferably an ion gun that irradiates an object with an ion, and it is preferable to perform a pretreatment using an ion gun that irradiates at least one ion. Examples of such ions include rare gas ions such as argon, oxygen ions and nitrogen ions, or mixed ions thereof.
若如此對聚合物薄膜預先照射離子，則對於後述掩蔽 層和基底層之聚合物薄膜的密合性爲非常高。其機制雖未 詳細闡明’但認爲大約爲經由離子照射而令聚合物薄膜表 面被活化，或者進行極微細狀態之粗化處理（凹凸處理） 對於此類聚合物薄膜照射離子爲以形成後述之掩蔽層 和基底層之前以前處理型式進行爲佳。 又，以離子槍照射離子之條件例如於具備離子槍之裝 置中，以1\1〇_3〜7/1〇-1?3，較佳爲5\10-3〜5\1〇」？3之 ~ 10 - (8) 200417309 真空下，離子原料氣體5〇〜50cc/分鐘、較佳爲80〜250cc/ 分鐘，標的電流（電源）0.01〜5kw/dm2、較佳爲 〇」〜3kw/dm2之條件下實行。 (掩蔽層）If the polymer film is irradiated with ions in this way, the adhesion to the polymer film of a masking layer and a base layer described later is very high. Although the mechanism is not clarified in detail, it is thought that the surface of the polymer film is activated by ion irradiation, or roughening treatment (concave and convex treatment) is performed in a very fine state. This type of polymer film is irradiated with ions to form the later-described The masking layer and the base layer are preferably processed in a pre-treatment mode. In addition, the conditions for irradiating ions with an ion gun are, for example, 1 \ 1〇_3 ~ 7 / 1〇-1? 3, preferably 5 \ 10-3 ~ 5 \ 1〇 in a device equipped with an ion gun? " 3 to 10-(8) 200417309 Under vacuum, the ion source gas is 50 to 50 cc / min, preferably 80 to 250 cc / min, and the target current (power supply) is 0.01 to 5 kw / dm2, preferably 0 to 3 kw / dm2. (Masking layer)
本發明之掩蔽層爲將具有各種周波數的電磁波予以掩 蔽’即具有掩蔽之作用，爲於前述聚合物薄膜之表面，或 於形成後述基底層之情況中爲於其上形成。此類掩蔽層爲 厚度爲 1〜8μΐΒ，且含有至少一種 Ni、Fe、Co、Ti、Zn、 Ct、Sn、Cu及彼等金屬之合金所組成群中選出一種者， 且以濺鍍法、蒸鍍法或電鍍法之任一種方法分別形成一層 或二層以上爲其特徵。其厚度限定爲1〜8 μηι係因於厚度 爲未滿1 μηι時，對於電磁波的掩蔽性不夠充分，另一方 面’即使超過8 μηι亦不會令電磁波的掩蔽有所差別且反 而阻礙可撓性。若考慮此些點，則其厚度以2〜5 μιη爲特 @ °又’將構成成分限定於上述金屬類係因對於電磁波的 掩蔽性優良，且其形成手段必須可採用濺鍍法、蒸鍍法或 電鍍法。又，形成方法採用濺鍍法、蒸鑛法或電鍍法係因 如前述之金屬並不能使用做爲金屬箔，且於其性能方面必 須與聚合物薄膜等具有充分的密合性，且視需要自由設定 其厚度。 本發明之掩蔽層爲根據所欲掩蔽之電磁波周波數而選 擇構成金屬之種類爲佳。例如，對於周波數大約爲 5 00 0Hz以下之低周波數的電磁波，選擇含有至少一種Ni -11 - (9) 200417309The masking layer of the present invention is used for masking electromagnetic waves having various cycle numbers, that is, it has a masking effect, and is formed on the surface of the aforementioned polymer film or in the case of forming a later-described base layer. Such a masking layer is one selected from the group consisting of an alloy having a thickness of 1 to 8 μΐB and containing at least one kind of Ni, Fe, Co, Ti, Zn, Ct, Sn, Cu, and their metals, and is formed by sputtering, It is characteristic that either one of the vapor deposition method or the electroplating method is used to form one or more layers. The thickness is limited to 1 ~ 8 μηι because the shielding of electromagnetic waves is not sufficient when the thickness is less than 1 μηι. On the other hand, even if it exceeds 8 μηι, the shielding of electromagnetic waves will not be different and it will hinder the flexibility. Sex. If these points are taken into consideration, the thickness is limited to 2 ~ 5 μιη @ °, and the constituents are limited to the above-mentioned metal systems because they have good shielding properties against electromagnetic waves, and the formation means must be capable of adopting sputtering and vapor deposition. Method or plating method. In addition, the formation method uses a sputtering method, a vapor deposition method, or an electroplating method because the metal as described above cannot be used as a metal foil, and its performance must have sufficient adhesion with a polymer film, etc., and if necessary, Freely set its thickness. The masking layer of the present invention preferably selects the type of constituent metal according to the number of electromagnetic waves to be masked. For example, for electromagnetic waves with a low number of cycles at a frequency below about 5000 Hz, choose to contain at least one type of Ni -11-(9) 200417309
、Co、Fe及彼等金屬之合金所組成群中選出一種爲佳， 對於周波數大約爲5 000Hz以上之高周波數的電磁波，則 選擇Cu爲佳◦更具體而言，以Cu構成掩蔽層時，於聚 合物薄膜之表面，較佳爲於此表面形成後述具有防止氧化 效果的基底層並且於其上形成由C 11所構成的後述基底層 ，加上以電鍍液之組成（硫酸銅50〜3 0 0克/公升、較佳爲 80〜150克/公升、硫酸50〜300克/公升、較佳爲90〜160克 /公升、氯30〜1 OOppm、較佳爲50〜70PPm且另外視需要配 合少量的添加劑），電流密度 0 . 1〜2 0 A / d m2、較佳爲 0.5〜4 A/dm2、液溫10〜7(TC、較佳爲25〜35°C之條件下進 行電鍍，則可形成1〜8 μηι的厚度。依此，可形成對於高 周波數之電磁波顯示出特優良之掩蔽性的掩蔽層。It is better to choose one from the group consisting of alloys of Al, Co, Fe, and their metals. For electromagnetic waves with a high frequency of about 5 000 Hz or more, it is better to choose Cu. More specifically, when Cu is used as a masking layer On the surface of the polymer film, it is preferable to form a base layer having an anti-oxidation effect described later on the surface and form a base layer composed of C 11 described later on the surface, plus a plating solution (copper sulfate 50 ~ 300 g / L, preferably 80 to 150 g / L, sulfuric acid 50 to 300 g / L, preferably 90 to 160 g / L, chlorine 30 to 100 ppm, preferably 50 to 70 PPm and other Need to mix a small amount of additives), current density 0.1 ~ 2 0 A / d m2, preferably 0.5 ~ 4 A / dm2, liquid temperature 10 ~ 7 (TC, preferably 25 ~ 35 ° C) By plating, a thickness of 1 to 8 μm can be formed. Accordingly, a masking layer that exhibits excellent masking properties for electromagnetic waves with a high frequency can be formed.
又，本發明之掩蔽層可分開形成二層以上。例如，若 以含有至少一種Ni、Co、Fe及彼等金屬之合金所組成群 中選出一種，與Cii兩者分別構成二層掩蔽層，則可作對 於低周波數和高周波數兩者電磁波顯示掩蔽性的掩蔽層， 爲本發明之特佳態樣之一。更具體而言，於聚合物薄膜之 表面、較佳爲於此表面形成後述基底層之表面，以電鍍液 之組成（硫酸鎳50〜3 5〇克/公升、較佳爲2 00〜2 5 0克/公 升、氯化鎳10〜100克/公升、較佳爲4〇〜50克/公升、硼 酸1 〇〜6 0克/公升、較佳爲3〇〜5〇克/公升、另外視需要配 合少量的添加劑，且ρΗ0·5〜6.0、較佳爲pH3.0〜4.5之組 成）、電流密度1〜10 A/dm2、較佳爲 2〜4 A/dm2、液溫 3 0〜7 0 °C 、較佳爲 45〜55 °C之條件下進行電鍍，形成 -12- (10) 200417309In addition, the masking layer of the present invention can be separately formed into two or more layers. For example, if one is selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and these metals, and Cii respectively constitute a two-layer masking layer, it can be used for electromagnetic wave display for both low frequency and high frequency. The masking masking layer is one of the particularly preferred aspects of the present invention. More specifically, the surface of the polymer film, preferably the surface of the base layer described later, is formed on the surface of the polymer film, and the composition of the plating solution (nickel sulfate 50 ~ 350 g / liter, preferably 200 ~ 2 5 0 g / litre, nickel chloride 10 to 100 g / litre, preferably 40 to 50 g / litre, boric acid 10 to 60 g / litre, preferably 30 to 50 g / litre. A small amount of additives is needed, and the composition is ρΗ0.5 ~ 6.0, preferably pH 3.0 ~ 4.5), current density 1 ~ 10 A / dm2, preferably 2 ~ 4 A / dm2, liquid temperature 3 0 ~ 7 Electroplating at 0 ° C, preferably 45 to 55 ° C, forming -12- (10) 200417309
1〜8 μι厚度之Ni所構成的第一掩蔽層，並於其上以上述 相同條件下形成1〜8 μηι厚度之Ci]所構成的第一掩蔽層。 還有’此兩掩蔽層的形成順序當然可與上述相反，且於此 情形中亦可掩蔽低周波數及高周波數兩者電磁波。又，例 如以Fe和Ni所構成之合金代替上述Ni構成掩蔽層時， 以電鑛液之組成（硫酸鎳 40〜400克/公升、較佳爲 80〜320克/公升、氯化鎳20〜100克/公升、較佳爲80〜320 克/公升、硼酸10〜70克/公升、較佳爲35〜50克/公升、硫 酸亞鐵2〜50克/公升、較佳爲5〜20克/公升，另外視需要 配合少量的添加劑，且pH2〜5、較佳爲pH 3〜3.8之組成） 、電流密度1〜1 5 A / d m 2、較佳爲4〜6 A / d m2、液溫3 0〜7 0 °C、較佳爲50〜60 °C之條件下進行電鍍則可形成。A first masking layer made of Ni with a thickness of 1 to 8 μm was formed thereon under the same conditions as above. Also, 'the formation order of these two masking layers can of course be reversed from the above, and in this case, both low frequency and high frequency electromagnetic waves can be masked. In addition, for example, when an alloy composed of Fe and Ni is used instead of Ni to form the masking layer, the composition of the electric mineral liquid (nickel sulfate 40 to 400 g / liter, preferably 80 to 320 g / liter, nickel chloride 20 to 100 g / L, preferably 80 to 320 g / L, boric acid 10 to 70 g / L, preferably 35 to 50 g / L, ferrous sulfate 2 to 50 g / L, preferably 5 to 20 g Per liter, with the addition of a small amount of additives as needed, and a composition of pH 2 ~ 5, preferably pH 3 ~ 3.8), current density 1 ~ 1 5 A / dm2, preferably 4 ~ 6 A / dm2, liquid It can be formed by plating at a temperature of 30 to 70 ° C, preferably 50 to 60 ° C.
更且，本發明之掩蔽層亦可形成三層以上。可例示例 如，如上述形成含有至少一種Ni、Co、Fe及彼等金屬之 合金所組成群中選出一種的第一掩蔽層，並於其上形成 c u所構成的第二掩蔽層，再於其上形成含有至少一種N i 、Co、Fe及彼等金屬之合金所組成群中選出一種的第三 掩蔽層等。此類構成的電磁波掩蔽材料若例如安裝至電氣 製品，則對於該電氣製品內部所發生之低周波數的電磁波 可予以掩蔽，並且對於欲由外部侵入內部之電磁波亦可予 以有效地掩蔽。 另一方面，本發明之掩蔽層亦可於聚合物薄膜的表裏 兩面形成。可列舉例如，於聚合物薄膜之任一者表面，令 厚度爲]μη]以下，且含有至少一種Ni、Co、Zn、Fe、Cu > 13- (11) 200417309Moreover, the masking layer of the present invention may be formed in three or more layers. For example, as described above, a first masking layer selected from the group consisting of alloys containing at least one kind of Ni, Co, Fe, and their metals is formed, and a second masking layer composed of cu is formed thereon, and then A third masking layer or the like selected from the group consisting of alloys containing at least one of Ni, Co, Fe, and these metals is formed thereon. If such a structured electromagnetic wave shielding material is installed in an electric product, for example, the low-frequency electromagnetic wave generated inside the electric product can be shielded, and the electromagnetic wave to be penetrated into the interior from the outside can be effectively shielded. On the other hand, the masking layer of the present invention may be formed on both the front and back surfaces of the polymer film. For example, on any surface of a polymer film, the thickness is [μη] or less and contains at least one kind of Ni, Co, Zn, Fe, Cu > 13- (11) 200417309
、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金屬之合金 所組成群中選出一種所構成的基底層爲以濺鍍法或蒸鍍法 之任一種方法形成一層或二層以上，並於其上形成含有至 少一種N i、C 〇、F e及彼等金屬之合金所組成群中選出一 種所構成的第一掩蔽層，再於其上形成C u所構成的第二 掩蔽層，並且於該聚合物薄膜之另一表面，令厚度爲1 μηι 以下’且含有至少一種Ni、Co、Zn、Fe、Cu、Ti、Cr、 彼等金屬之氧化物、氮化物及彼等金屬之合金所組成群中 選出一種所構成的下述基底層爲以濺鍍法或蒸鍍法之任一 種方法形成一層或二層以上，並於其上形成含有至少一種 N i、C 〇、F e及彼等金屬之合金所組成群中選出一種所構 成之第三掩蔽層的態樣。又，其他態樣可列舉例如於聚合 物薄膜之任一者表面，令厚度爲1 μ m以下，且含有至少 一種Ni、Co、Zn、Fe、Cn、Ti、C】·、彼等金屬之氧化物 、氮化物及彼等金屬之合金所組成群中選出一種所構成的 後述基底層爲以濺鍍法或蒸鍍法之任一種方法形成一層或 一層以上，並於其上形成C11所構成的第一掩蔽層，再於 其上形成含有至少一種Ni、Co、Fe及彼等金屬之合金所 組成群中選出一種所構成的第二掩蔽層，並且於該聚合物 薄膜之另一表面，令厚度爲Ιμιη以下，且含有至少一種 Mi、Co、Zn、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮 化物及彼等金屬之合金所組成群中選出一種所構成的後述 基底層爲以濺鍍法或黑鍍法之任一種方法形成一層或二層 以上’並於其上形成含有至少一種N i、c 〇、F e及彼等金 -14- (12) 200417309 屬之合金所組成群中選出一種所構成之第三掩蔽層的態樣 (基底層）, Ti, Cr, oxides, nitrides of these metals, and alloys of these metals are selected from the group consisting of a base layer formed by one of two methods: sputtering or vapor deposition And forming a first masking layer selected from the group consisting of alloys containing at least one Ni, Co, Fe, and their metals, and forming a second mask composed of Cu on it Layer, and on the other surface of the polymer film, to a thickness of 1 μm or less, and containing at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides, nitrides, and the like of these metals One of the following alloy layers selected from the group consisting of alloys of metals is formed into one or two or more layers by any of sputtering method and vapor deposition method, and contains at least one kind of Ni, C, A form of the third masking layer selected from the group consisting of Fe and their alloys. In other aspects, for example, on any surface of a polymer film, the thickness of which is 1 μm or less and contains at least one kind of Ni, Co, Zn, Fe, Cn, Ti, C], and other metals One of the oxides, nitrides, and alloys of these metals is selected from the group consisting of a later-mentioned base layer formed by one or more layers by one of a sputtering method and a vapor deposition method, and C11 formed thereon. A second masking layer formed of one selected from the group consisting of an alloy containing at least one Ni, Co, Fe, and these metals, and on the other surface of the polymer film, The substrate described below is selected from the group consisting of a thickness of 1 μm or less and containing at least one of Mi, Co, Zn, Fe, Cu, Ti, Cr, oxides, nitrides, and alloys of these metals. The layer is formed of one or two or more layers by any of a sputtering method or a black plating method, and is formed on the layer containing at least one Ni, c 0, Fe, and their gold. 14- (12) 200417309 belongs to One of the constituents of the alloy Aspect (base layer) of the masking layer
本發明之基底層爲於形成前述掩蔽層時具有做爲一種 電極的作用，特別可用於電鍍法形成前述掩蔽層的情況。 又，該基底層亦具有做爲防止由該層於上層所形成之層， 即，前述掩蔽層和其他基底層等被氧化之防止氧化層的作 用。該掩蔽層爲經由空氣中之氧氣和聚合物薄膜中所含之 水份中溶存氧氣的作用而被經時性地氧化，如此，此些層 一旦被氧化，則與聚合物薄膜的密合力顯著減低並且容易 發生剝離等之不適。於此類情形中，具有防止氧化效果之 基底層若存在於此些層與聚合物薄膜之間，則有效捕捉由 聚合物薄膜往此些層方向擴散的前述氧氣，因此該氧氣爲 在到達此些層爲止被有效除去。具有此類防止氧化效果的 基底層，在掩蔽層和其他基底層爲以Fe和Cu所構成的情 況中特別有效，以其他金屬所構成的情況中則未必必要形 成。 此類基底層爲於前述聚合物薄膜之表面與掩蔽層之間 形成，且厚度爲1μηι以下，且含有至少一種Ni、Co、Zn 、Fe、Cu、Ti、Cr、彼等金屬之氧化物、氮化物及彼等金 屬之合金所組成群中選出一種以濺鍍法或蒸鍍法之任一種 方法形成一層或二層以上。將厚度限定爲1 μηι以下，係 因作用爲電極和/或防止氧化層上若爲1 μηΊ則爲充分，並 -15- (13) 200417309The base layer of the present invention functions as an electrode when the aforementioned masking layer is formed, and is particularly useful when the aforementioned masking layer is formed by electroplating. In addition, the base layer also has a role as an oxidation preventing layer for preventing the mask layer and other base layers from being oxidized as a layer formed by the layer above the upper layer. The masking layer is oxidized over time by the action of oxygen in the air and dissolved oxygen in the water contained in the polymer film. In this way, once these layers are oxidized, their adhesion to the polymer film is significant. Reduces discomfort such as peeling. In such cases, if a base layer with an anti-oxidation effect is present between these layers and the polymer film, it can effectively capture the aforementioned oxygen diffused from the polymer film in the direction of these layers, so the oxygen is arriving here These layers have been effectively removed. The underlayer having such an anti-oxidation effect is particularly effective in the case where the masking layer and other underlayers are composed of Fe and Cu, and it is not necessarily formed in the case of other metals. Such a base layer is formed between the surface of the aforementioned polymer film and the masking layer, and has a thickness of 1 μm or less, and contains at least one kind of Ni, Co, Zn, Fe, Cu, Ti, Cr, oxides of these metals, One group of nitrides and alloys of these metals is selected to form one or two or more layers by any one of a sputtering method and a vapor deposition method. Limiting the thickness to 1 μηι or less is sufficient because it acts as an electrode and / or prevents the oxide layer from 1 μηΊ, and -15- (13) 200417309
不需要更高之厚度。又，將構成成分限定爲上述金屬類， 係因此些金屬顯示優良的導電性和防止氧化效果，並且適 於以濺鍍法和蒸鍍法形成。關於此些金屬類，主要以Fe 及Cu爲做爲電極的作用優良，Tl及Cl.爲做爲防止氧化 層的效果優良’又，N i、C 〇及Ζ η爲兼具兩者作用之特徵 。力一方面’形成手段採用雜鍍法和蒸鑛法上，係因並不 必要採用適於形成較厚層之電鍍法，且可將聚合物薄膜以 車乙燥狀態原樣進行處理。又，此類基底層如上述可形成一 層或二層以上，於形成二層以上之情形中，主要爲於聚合 物薄膜之表面形成具有防止氧化效果的基底層，並於其上 开夕成作用爲電極的基底層爲佳。No higher thickness is required. In addition, the constituent components are limited to the above-mentioned metals because these metals exhibit excellent electrical conductivity and oxidation prevention effects, and are suitable for formation by sputtering and vapor deposition. Regarding these metals, mainly Fe and Cu are excellent as electrodes, and Tl and Cl. Are excellent as preventing oxides. Also, Ni, Co, and Z η have both functions. feature. On the one hand, the formation method adopts the hybrid plating method and the vaporization method, because it is not necessary to use a plating method suitable for forming a thick layer, and the polymer film can be processed as it is. In addition, such a base layer can form one or two or more layers as described above. In the case where two or more layers are formed, a base layer having an oxidation prevention effect is mainly formed on the surface of the polymer film, and the base layer is formed thereon. It is preferably a base layer of an electrode.
此類基底層例如以濺鍍法形成時，其條件爲採用真空 度 lxl0_4 〜l.SxlO^Pa，較佳爲 1χ1(Γ4 〜1.5xl(T2pa、輸 出功率0.5〜15kw、較佳爲0.8〜10kw、Ar氣100〜400cc /分 鐘、較佳爲100〜2 5 0 cc/分鐘之條件爲佳。又，以蒸鍍法形 成時’其條件爲採用真空度1 X 1 0·5〜1 X 1 (T2Pa，較佳爲1 χ1〇“〜lxl(T3Pa、輸出功率10〜150kw、較佳爲40〜9 0kw 之條件爲佳。經由採用此類條件，則其厚度度可作成 2〇人〜Ιμιη，較佳爲50〜3000A。 還有，於此類基底層上形成前述掩蔽層前，於該基底 層上以0.5〜5 0°/。、較佳爲3〜10%濃度之硫酸進行0.1〜3分 鐘、較佳爲0.5〜1.5分鐘酸活化處理令其活化爲佳。經由 進行此類酸活化處理，則在構成基底層之金屬例如被氧化 時（即該金屬爲C.U時被氧化變成氧化銅）亦可將其有效 -16- (14) 200417309 地還原或溶解除去，提高掩蔽層的密合性且可於基底層上 形成。 (防止變色層）When such a base layer is formed by a sputtering method, for example, the condition is to use a vacuum of lxl0_4 to l.SxlO ^ Pa, preferably 1x1 (Γ4 to 1.5xl (T2pa, output power 0.5 to 15kw, preferably 0.8 to 10kw). The Ar gas is preferably 100 to 400 cc / minute, preferably 100 to 250 cc / minute. Also, when formed by the vapor deposition method, the condition is to use a vacuum of 1 X 1 0 · 5 to 1 X 1 (T2Pa, preferably 1 x 10 "~ lxl (T3Pa, output power 10 ~ 150kw, preferably 40 ~ 90kw. The conditions are better. By using such conditions, the thickness can be made to 20 people ~ 1μιη , Preferably 50 to 3000 A. In addition, before forming the aforementioned masking layer on such a base layer, perform 0.5 to 50 ° /., Preferably 3 to 10% concentration of sulfuric acid on the base layer for 0.1 to 3 minutes, preferably 0.5 to 1.5 minutes, is preferably activated by acid activation treatment. By performing such acid activation treatment, when the metal constituting the base layer is oxidized, for example, when the metal is CU, it is oxidized to copper oxide. ) It can also be effectively reduced by -16- (14) 200417309 to remove or dissolve it, improve the adhesion of the masking layer and form it on the base layer. . (Discoloration preventing layer)
本發明之防止變色層爲於掩蔽層以Cu構成之情況（ 掩蔽層爲形成二個以上時最上層爲以CU所構成之情況） 中形成，顯示出有效防止C U被氧化變色之作用。因此， 於C u構成之掩蔽層正上方形成。此類防止變色層爲以s n 、Ni、Co、Ti、Zn或Cr所形成，且其形成方法並無特別 限定，通常依蒸鍍法、蒸鍍法或電鍍法則可形成。例如， 將S η以電鍍法形成時，其條件可採用電鍍液之組成（s n 10〜70克/公升、較佳爲20〜60克/公升、有機酸70〜200克 /公升、較佳爲9^〗30克/公升，另外視需要配合之少量 添加劑）、電流密度〇·5〜ΙΟΑ/dm2、較佳爲1〜2 A/dm2、 液溫1 0〜7 0 t：、較佳爲20〜30 °C等之條件。經由採用此類 條件’則其厚度可作成〇.〇1〜2μηι、較佳爲〇.1〜1μηι。 以下，列舉實施例更詳細說明本發明，但本發明不被 其限定。 (實施例1 ) 本實施例爲關於聚合物薄膜表面形成基底層，並於其 i形成Ni和Fe所形成合金所構成之掩蔽層的電磁波掩蔽 材料。以下，參照圖1予以說明。 將做爲聚合物薄膜]0 1之厚度2 5 μηι的PET薄膜切成 (15) 200417309The discoloration preventing layer of the present invention is formed when the masking layer is made of Cu (when the masking layer is formed of two or more layers, and the uppermost layer is made of CU), which shows the effect of effectively preventing Cu from being oxidized and discolored. Therefore, it is formed directly above the masking layer made of Cu. Such a discoloration preventing layer is formed of sn, Ni, Co, Ti, Zn, or Cr, and the formation method thereof is not particularly limited. Usually, it can be formed by a vapor deposition method, a vapor deposition method, or a plating method. For example, when S η is formed by electroplating, the conditions can use the composition of the plating solution (sn 10 ~ 70 g / L, preferably 20 ~ 60 g / L, organic acid 70 ~ 200 g / L, more preferably 9 ^〗 30 g / L, with a small amount of additives if necessary), current density 0.5 ~ IOA / dm2, preferably 1 ~ 2 A / dm2, liquid temperature 1 0 ~ 7 0 t :, preferably 20 ~ 30 ° C. By adopting such a condition ', the thickness can be made into 0.01 to 2 µm, preferably 0.1 to 1 µm. Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited thereto. (Embodiment 1) This embodiment relates to an electromagnetic wave shielding material in which a base layer is formed on the surface of a polymer film, and a masking layer composed of an alloy of Ni and Fe is formed on i. Hereinafter, it will be described with reference to FIG. 1. Cut as a polymer film] a PET film with a thickness of 0 1 to 2 5 μm into (15) 200417309
寬2 5 0mm、長度100m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鍍裝置室內的送出軸，並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以真空泵將 室內作成4 X 1 〇 ^ P a真空狀態後，令附有冷卻裝置之驅動 鼓、送出軸及捲取軸分別以聚合物薄膜爲以0.4m/分鐘之 速度捲取般迴轉。其後，以加熱器令溫度爲1 ] 〇它，且於 碰撞處理部爲於氬氣1 2 0 c c /分鐘、輸出功率〇 . 9 k w之條件 下進fT碰ί重處理’令聚合薄膜之含水量爲未滿〇 . 〇 1 %般進 行真空乾燥。 接著，於上述室內之第一標的及第二標的分別裝配 Ni，且使用氬氣各200cc/分鐘、輸出功率各8kw之高磁 波磁控管濺鍍N i，於前述真空乾燥處理之聚合物薄膜〗〇】 表面上形成厚度1 8 00人的基底層102。After the width is 250 mm and the length is 100m, it is wound up with a stainless steel core, and it is assembled to the delivery shaft in the sputtering equipment room, and its front end is attached to the winding with a polyimide tape with an adhesive. axis. After that, the chamber was made into a vacuum of 4 X 1 〇 ^ Pa with a vacuum pump, and the driving drum, the sending shaft, and the winding shaft with a cooling device were respectively wound at a speed of 0.4 m / min with a polymer film. turn around. Thereafter, a heater was used to set the temperature to 1 °. It was subjected to heavy processing under the conditions of a collision treatment section under argon gas at 120 cc / min and an output power of 0.9 kw. The water content was less than 0.01%, and vacuum drying was performed. Next, Ni was installed on the first target and the second target in the room, and Ni was sputtered using high magnetic wave magnetrons with 200cc / min of argon and 8kw of output power. The polymer films were vacuum-dried. 〖〇】 A base layer 102 having a thickness of 1 800 people is formed on the surface.
其後，將如此形成基底層之聚合物薄膜由濺鍍裝置中 取出，接著安裝至連續電鍍裝置。於充塡5 %硫酸之電鍍 浴中，將上述聚合物薄膜以1 .〇m/分鐘之移動速度連續浸 漬1分鐘，使得上述基底層進行酸活化處理。其次，重覆 水洗2回後，於上述裝置之電鍍浴中充塡電鍍液（由硫酸 鎳2 4 0克/公升、氯化鎳5 0克/公升、硼酸4 0克/公升、硫 酸亞鐵 20 克 / 公升及 Ferroallog FA(Ebaraudilite (股） 製）70cc/彳所構成，PH3.8 )，並將上述聚合物薄膜以 1 .0m/分鐘之移動速度連續浸漬，且於液溫55 t，電流密 度4 A/dm2之條件下電鍍5分鐘，則可於前述基底層1〇2 上形成厚度4·3^之Ni和Fe所組成合金（Ni : Fe = 70 : -18- (16) 200417309 3 0 )所構成的掩蔽層1 〇 3。接著，重覆水洗3回，以吹風 機瀝水後以6 0 °C乾燥1分鐘，取得圖1所示之本發明的 電磁波掩蔽材料。After that, the polymer film thus formed with the base layer was taken out of the sputtering apparatus, and then mounted to a continuous plating apparatus. In a plating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 m / min, so that the above-mentioned base layer was subjected to acid activation treatment. Secondly, after washing twice, the electroplating bath in the above device was filled with a plating solution (consisting of nickel sulfate 240 g / L, nickel chloride 50 g / L, boric acid 40 g / L, ferrous sulfate 20 g / L and Ferroallog FA (made by Ebaraudilite (stock)) 70cc / 彳, PH3.8), and the polymer film was continuously impregnated at a moving speed of 1.0m / min, and the liquid temperature was 55 t, With a current density of 4 A / dm2 for 5 minutes, an alloy of Ni and Fe with a thickness of 4 · 3 ^ can be formed on the aforementioned base layer 10 (Ni: Fe = 70: -18- (16) 200417309 30), a masking layer 1 03. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 60 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention shown in FIG.
將如此處理所得之電磁波掩蔽材料，使用移相振動器 一邊照射1 00〜2 00赫之電磁波，一邊以示波器進行測定時 ，於未照射電磁波之面並未檢測出1 〇 〇〜2 0 0赫的電磁波。 因此，上述所得之電磁波掩蔽材料可做爲低周波數用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性亦優良’故於輕薄短小化之各種製品中亦可廣泛 使用。 (實施例2 )When the electromagnetic wave masking material thus processed was irradiated with an electromagnetic wave of 100 to 2000 Hz using a phase-shift vibrator and measured with an oscilloscope, no 100 Hz to 200 Hz was detected on the surface where the electromagnetic wave was not irradiated. Electromagnetic waves. Therefore, the electromagnetic wave masking material obtained as described above can be used as a magnetic wave masking material for a low frequency and used in various applications. In addition, the electromagnetic wave shielding material is also excellent in flexibility because of its flexibility, so it can be widely used in various products that are thinner, lighter, and shorter. (Example 2)
本實施例爲關於在聚合物薄膜之表面形成具有防止氧 化效果的基底層，並於其上形成作用爲電極的第二層基底 層，於其上形成由C υ所構成之掩蔽層的電磁波掩蔽材料 。以下，參照圖2予以說明。 將做爲聚合物薄0吴2 0 1之厚度2 5 μ m的ρ Ε Τ薄膜切成 寬2 5 0mm、長度l〇〇m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鍍裝置室內的送出軸，並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以真空栗將 室內作成4 X 1 (T2Pa的真空狀態後，令附有冷卻裝置之驅 動豉、达出軸及捲取軸分別以聚合物薄膜爲以〇 · 4 m /分鐘 之速度捲取般迴轉。其後，以加熱器令溫度爲〗丨〇 ^，且 於碰撞處理邰爲於氬氣1 2 0 C C /分鐘、輸出功率〇 · 9 k w之條 -19- (17) 200417309 件下進行碰撞處理，令聚合物薄膜之含水量爲未滿〇 . ％ 般進行真空乾燥。 fee者’於丄述室內之第一標的裝配C 1·，且於氬氣 1 0 0 c C /分鐘、輸出功率2 · 2 k W之條件下將c r濺鍍，於前 述真空乾燥處理之聚合物薄膜201表面上形成厚度70 A 具有防止氧化效果的基底層204。This embodiment relates to the formation of a base layer having an oxidation prevention effect on the surface of a polymer film, and a second base layer serving as an electrode is formed thereon, and an electromagnetic wave masking layer of a masking layer made of C υ is formed thereon. material. Hereinafter, it will be described with reference to FIG. 2. A ρ Ε Τ film with a thickness of 2 μm and a thickness of 5 μm as a polymer thin film was cut to a width of 250 mm and a length of 100 m, and then wound with a core made of stainless steel, and assembled to a spatter. The feed shaft in the plating equipment room is attached to the take-up shaft with a polyimide tape with an adhesive attached. After that, the chamber was made into a vacuum state of 4 X 1 (T2Pa with a vacuum pump), and the drive shaft, the delivery shaft, and the winding shaft with a cooling device were respectively made of polymer film at a speed of 0.4 m / min. It turns around like a coil. After that, the temperature of the heater is set to 丨 丨 ^, and the collision processing is argon at 120 CC / min, and the output power is 0.9 kw. 19- (17) 200417309 Collision treatment is carried out under the conditions of the polymer film, so that the water content of the polymer film is less than 0.0%, and vacuum drying is performed. The fee maker's first target assembly C 1 · in the description room, and argon 100 c c / Under the conditions of min. Output power of 2.2 kW, cr was sputtered, and a base layer 204 having an anti-oxidation effect with a thickness of 70 A was formed on the surface of the polymer film 201 in the aforementioned vacuum drying process.
接著，於上述室內之第二標的裝配Cu，且於氬氣 200cc/分鐘、輸出功率9kw之條件下將濺鍍，於前述 具有防止氧化效果之基底層204上形成厚度2100A之作 用爲電極的第—基底層202。Next, Cu was assembled on the second target in the above room, and sputtering was performed under the conditions of 200 cc / min of argon and output power of 9 kw, and a second electrode having a thickness of 2100 A was formed on the base layer 204 having the effect of preventing oxidation. —Base layer 202.
其後’將如此形成基底層之聚合物薄膜由濺鍍裝置中 取出，接著安裝至連續電鍍裝置。於充塡5 %硫酸之電鍍 浴中，將上述聚合物薄膜以1 ·〇ηι/分鐘之移動速度連續浸 漬1分鐘，使得上述第二層基底層2 0 2進行酸活化處理。 其次，重覆水洗2回後，於上述裝置之電鍍浴中充塡電鍍 液（由硫酸銅90克/公升、硫酸1 50克/公升、氯50ppm 及Toplutina 380H(奧野製藥工業（股）製）l〇cc/公升所 構成），並將上述聚合物薄膜以1.0m/分鐘之移動速度連 續浸漬，且於液溫291，由流密度4A/dm2之條件下電鍍 4分鐘，則可於前述第二基底層2 02上形成厚度3·5μηι之 Cu所構成的掩蔽層203。接著，重覆水洗3回，以吹風機 瀝水後以600 °C乾燥1分鐘’取得圖2所示之本發明的電 磁波掩蔽材料。 將如此處理所得之電磁波掩蔽材料，使用移相振動器 -20- (18) 200417309 一邊照射1〜2千兆赫之電磁波，一邊以示波器進行測定時 ，於未照射電磁波之面並未檢測出1〜2千兆赫的電磁波。 因此’上述所得之電磁波掩蔽材料可做爲高周波數用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性優良，故於輕薄短小化之各種製品中亦可廣泛使 用。Thereafter, the polymer film thus formed as the base layer is taken out of the sputtering apparatus, and then mounted to a continuous plating apparatus. In a plating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 nm / minute, so that the above-mentioned second base layer 202 was subjected to acid activation treatment. Secondly, after washing twice, the electroplating bath was filled with a plating solution (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of chlorine, and Toplutina 380H (manufactured by Okuno Pharmaceutical Co., Ltd.)) 10 cc / liter), and the polymer film is continuously immersed at a moving speed of 1.0 m / min, and electroplated for 4 minutes at a liquid temperature of 291 and a flow density of 4 A / dm2. A masking layer 203 made of Cu having a thickness of 3.5 μm is formed on the two base layers 202. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 600 ° C for 1 minute 'to obtain the electromagnetic shielding material of the present invention shown in FIG. 2. Using the phase-shift vibrator -20- (18) 200417309 for the electromagnetic wave masking material obtained in this way, when measuring with an oscilloscope while irradiating electromagnetic waves of 1 to 2 GHz, 1 to 2 were not detected on the side where the electromagnetic waves were not irradiated. 2 gigahertz of electromagnetic waves. Therefore, the electromagnetic wave masking material obtained as described above can be used as an electromagnetic wave masking material for high frequency applications in various applications. In addition, since this electromagnetic shielding material is excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter.
(實施例3 ) 本實施例爲關於在聚合物薄膜之表面形成具有防止氧 化效果的基底層，並於其上形成作用爲電極的第二層基底 層，於其上形成由C u所構成之掩蔽層，再於其上形成防 止變色層的電磁波掩蔽材料。以下，參照圖3予以說明。(Example 3) This example is about forming a base layer having an oxidation prevention effect on the surface of a polymer film, and forming a second base layer functioning as an electrode thereon, and forming a layer consisting of Cu on the polymer film. The masking layer is further formed with an electromagnetic wave masking material on the discoloration preventing layer. Hereinafter, it will be described with reference to FIG. 3.
首先，形成Cu所構成之掩蔽層爲止爲完全同上述實 施例2處理並且取得形成掩蔽層3 〇 3的聚合物薄膜3 〇 !。 接著，於連續電鍍裝置之電鍍浴中充塡電鍍液（由Sn 5 5 克/公升’做爲有機酸之Metas AM(Uken工業（股）製 )120克/公升及SBS-R(Uken工業（股）製60cc/公升所 構成），將上述聚合物薄膜以1 · 〇 m /分鐘之移動速度連續 浸漬，且於液溫30°C、電流密度2A/dm2之條件下電鍍1 分鐘，則可於前述掩蔽層3 0 3上形成厚度0 · 6 μ m之S η所 構成的防止變色層3 0 5。接著，重覆水洗3回，以吹風機 瀝水後以6 0 °C乾燥1分鐘，取得圖3所示之本發明的電 磁波掩蔽材料。 將如此處理所得之電磁波掩蔽材料，使用移相振動器 (19) 200417309 一邊照射1〜2千兆赫之電磁波，—邊以示波器進行測定時 ’於未照射電磁波之面並未檢測出〗〜2千兆赫的電磁波。 因此’上述所得之電磁波掩蔽材料可做爲高周波數用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可ί発性亦優良，故於輕薄短小化之各種製品中可廣泛使 用0First, until a masking layer made of Cu is formed, it is completely treated in the same manner as in Example 2 above, and a polymer film 3 0 3 forming a masking layer 3 is obtained. Next, fill a plating bath of a continuous plating apparatus with a plating solution (Metas AM (made by Uken Industries) made of Sn 5 5 g / liter 'as an organic acid, 120 g / liter and SBS-R (Uken Industries ( It is composed of 60cc / liter), and the polymer film is continuously dipped at a moving speed of 1.0m / min, and electroplated at a liquid temperature of 30 ° C and a current density of 2A / dm2 for 1 minute. A discoloration prevention layer 3 0 5 formed of S η having a thickness of 0.6 μm was formed on the masking layer 3 0 3, and then washed repeatedly with water 3 times, drained with a hair dryer and dried at 60 ° C for 1 minute to obtain The electromagnetic wave masking material of the present invention shown in Figure 3. The electromagnetic wave masking material thus processed was irradiated with an electromagnetic wave of 1 to 2 gigahertz using a phase-shift vibrator (19) 200417309. No electromagnetic wave is detected on the surface irradiated with electromagnetic waves. The electromagnetic wave shielding material obtained above can be used as an electromagnetic wave shielding material for high-frequency applications in various applications. In addition, the electromagnetic wave shielding material Also excellent, so Can be widely used in various thin and light products
(實施例4 ) 本實施例爲關於在聚合物薄膜之表面形成具有防止氧 化效果的基底層，並於其上形成三層掩蔽層的電磁波掩蔽 材料。以下，參照圖4予以說明。(Embodiment 4) This embodiment relates to an electromagnetic wave masking material in which a base layer having an anti-oxidation effect is formed on the surface of a polymer film, and three masking layers are formed thereon. Hereinafter, it will be described with reference to FIG. 4.
將做爲聚合物薄膜401之厚度25 μηι的PET薄膜切成 寬2 5 0 mm、長度10 0m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鍍裝置室內的送出軸，並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以真空泵將 室內作成4 X 1 (T2Pa真空狀態後，令附有冷卻裝置之驅動 鼓、送出軸及捲取軸分別以聚合物薄膜爲以Q · 4m/分鐘之 速度捲取般迴轉。其後，以加熱器令溫度爲1 1 0 °C ’且於 碰撞處理部爲於氬氣1 2〇cc/分鐘、輸出功率0.9kw之條件 下進行碰撞處理’令聚合薄膜之含水量爲未滿0 · 〇1 %般進 行真空乾燥。 接著，於上述室內之第一標的及第二標的分別裝配 Ni，且使用氬氣各200cc/分鐘、輸出功率各8kw之高磁 波磁控管濺鍍Ni，於前述真空乾燥處理之聚合物薄膜40 1 -22- (20) 200417309 表面上形成厚度1800A之具有防止氧化效果的基底層。A 25 μm-thick PET film as a polymer film 401 was cut into a width of 250 mm and a length of 100 m, and then wound with a stainless steel core, and was assembled into a delivery shaft in a sputtering device chamber. The front end is attached to the take-up shaft with a polyimide tape with an adhesive. After that, the chamber was made into a 4 X 1 (T2Pa vacuum state) with a vacuum pump, and the driving drum, the delivery shaft, and the winding shaft with a cooling device were rotated around the polymer film at a speed of Q · 4m / min. After that, the temperature of the polymerized film was set to 110 ° C with a heater and the collision processing was performed under the conditions of 120 cc / min of argon and 0.9 kw of output power. The water content of the polymer film was Vacuum drying is performed at less than 0. 〇1%. Next, Ni is installed in the first target and the second target of the above room, and high magnetic wave magnetron sputtering with 200cc / min and 8kw output power is used for argon. Ni, on the surface of the polymer film 40 1 -22- (20) 200417309 of the aforementioned vacuum drying treatment, a base layer having an anti-oxidation effect with a thickness of 1800 A is formed on the surface.
其後’將如此形成具有防止氧化效果之基底層之聚合 物薄膜由濺鍍裝置中取出，接著安裝至連續電鍍裝置。於 δ亥裝置之電浴中充塡電鍍液（由硫酸鎳24〇克/公升、 氯化鎳50克/公升、硼酸40克/公升、硫酸亞鐵2〇克/公 升及 Ferr〇alI〇g FA ( Ebaraudilite (股）製）70cc/i 所構 成，PH3.8)，並將上述聚合物薄膜以1〇m/分鐘之移動速 度連續浸漬，且於液溫55 °C，電流密度4A/dm2之條件下 電鑛5分鐘，則可於前述具有防止氧化效果之基底層4〇4 上开< 成厚度4 · 5 μ m之N i和F e所組成合金所構成的第一掩 蔽層4 0 3 a。接著，重覆水洗3回，以吹風機瀝水後以6 〇 °C乾燥1分鐘。Thereafter, the polymer film thus formed with the base layer having the anti-oxidation effect is taken out of the sputtering apparatus, and then mounted to a continuous plating apparatus. Fill the electroplating bath in the electric bath of the delta device (consisting of 24 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and FerroalOg FA (manufactured by Ebaraudilite) 70cc / i, PH3.8), the polymer film was continuously impregnated at a moving speed of 10m / min, and the liquid temperature was 55 ° C, and the current density was 4A / dm2 Under the condition of electricity ore for 5 minutes, the first masking layer 4 composed of an alloy of Ni and Fe can be formed on the above-mentioned base layer 400 having an oxidation prevention effect. 0 3 a. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 60 ° C for 1 minute.
其次’於s亥連I買電鍍裝置之電鑛浴中充塡電鍍液（由 硫酸銅90克/公升、硫酸150克/公升、氯5〇ppm及 Toplutina 3 8 0 H (奧野製藥工業（股）製）Μα/公升所構 成），並將上述聚合物薄膜以1 · 〇 m /分鐘之移動速度連續 浸漬，且於液溫2 9 °C，由流密度4 A / d m2之條件下電鍍4 分鐘，則可於前述第一掩蔽層4 0 3 a上形成厚度3 . 5 μ m之 C υ所構成的第二掩蔽層4 0 3 b。接著，重覆水洗3回，以 吹風機瀝水後以6 0 0 °C乾燥1分鐘。 更且，於該連續電鍍裝置之電鍍浴中充塡電鍍液（由 硫酸鎳240克/公升、氯化鎳50克/公升、硼酸40克/公升 、硫酸亞鐵20克/公升及Ferroaii〇g fa (前述）7〇cc/_<?所 構成，pH3.8)，並將上述聚合物薄膜以1 .〇m/分鐘之移動 -23- (21) 200417309 速度連續浸瀆，且於液溫5 5 t，電流密度4 A/dm2之條件 下電鍍5分鐘，則可於前述第二掩蔽層4 0 3 b上形成厚度 4.4 μ m之N i和F e所組成合金所構成的第二掩蔽層4 0 3 c。 接著，重覆水洗3回，以吹風機瀝水後以6 〇乾燥]分 鐘，取得圖4所示之本發明的電磁波掩蔽材料。Secondly, fill the electroplating bath in the electric ore bath of the electroplating device purchased from Hailian I (90g / L of copper sulfate, 150g / L of sulfuric acid, 50ppm of chlorine and Toplutina 3 8 0 H (Okuno Pharmaceutical Industry Co., Ltd. Manufactured by Mα / liter), and the above polymer film was continuously immersed at a moving speed of 1.0 m / min, and electroplated at a liquid temperature of 29 ° C and a flow density of 4 A / d m2 In 4 minutes, a second masking layer 4 0 3 b composed of C υ with a thickness of 3.5 μm can be formed on the first masking layer 4 0 3 a. Then, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried at 600 ° C for 1 minute. Furthermore, the electroplating bath of the continuous electroplating device was filled with a plating solution (consisting of 240 g / L of nickel sulfate, 50 g / L of nickel chloride, 40 g / L of boric acid, 20 g / L of ferrous sulfate, and Ferroaii0g fa (previously) 70 cc / _ <?, pH 3.8), and the polymer film was continuously immersed at a speed of 1.0 m / min -23- (21) 200417309, and the liquid temperature 5 5 t, electroplating at a current density of 4 A / dm2 for 5 minutes, a second mask composed of an alloy of Ni and F e with a thickness of 4.4 μm can be formed on the second masking layer 4 0 3 b. Layer 4 0 3 c. Next, it was repeatedly washed with water 3 times, drained with a hair dryer, and dried for 60 minutes] to obtain the electromagnetic wave shielding material of the present invention shown in FIG. 4.
將如此處理所得之電磁波掩蔽材料，使用移相振動器 一邊分別照射1 〇 0〜2 0 0赫及1〜2千兆赫之電磁波，一邊以 示波器進行測定時，於未照射電磁波之面並未檢測出 1 0 0〜2 00赫及1〜2千兆赫兩者的電磁波。因此，上述所得 之電磁波掩蔽材料可做爲低周波數及高周波數兩者用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性亦優良，故於輕薄短小化之各種製品中亦可廣泛 使用。 (實施例5 )The electromagnetic wave masking material obtained in this way was measured with an oscilloscope while irradiating electromagnetic waves of 1000 to 2000 Hz and 1 to 2 GHz using a phase-shift vibrator, but it was not detected on the surface that was not radiated with electromagnetic waves. It emits electromagnetic waves of 100 ~ 2 00 Hz and 1 ~ 2 Gigahertz. Therefore, the electromagnetic wave masking material obtained above can be used as an electromagnetic wave masking material for both low-frequency and high-frequency waves, and can be used in various applications. In addition, since the electromagnetic wave shielding material is also excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter. (Example 5)
本實施例爲關於在聚合物薄膜之表裏兩面形成掩蔽層 的電磁波掩蔽材料。以下，參照圖5予以說明。 將做爲聚合物薄膜501之厚度25 μπι的PET薄膜切成 寬2 5 0 m m、長度1 〇 〇 m後，以不銹鋼製之型芯予以捲取， 並且裝配至濺鍍裝置室內的送出軸，並將其前端部以附有 黏合劑之聚醯亞胺膠帶安裝至捲取軸。其後，以真空泵將 室內作成4 X 1 (T2pa真空狀態後，令附有冷卻裝置之驅動 鼓、送出軸及捲取軸分別以聚合物薄膜爲以〇.4m/分鐘之 速度捲取般迴轉。其後，以加熱器令溫度爲〇 t：,且於 -24 - (22) (22)200417309 碰撞處理部爲於氬i 12⑹分鐘、輸出卿Q 9kw之條件 下進行碰k處理’令聚合薄膜之含水量爲未滿Q · Q} %般進 行真空乾燥。 接著’於上述室內之第一標的及第二標的分別裝配 Ni，且使用氬氣各20〇cc/分鐘、輸出功率各8]^之高磁 波磁控官濺鑛Ν ;ι，於前述真空乾燥處理之聚合物薄膜5 〇 ] 表面上形成厚度1 8 0 0A之具有防止氧化效果的基底層5〇4 〇 其後’將如此形成具有防止氧化效果之基底層之聚合 物薄膜由濺鍍裝置中取出，接著安裝至連續電鍍裝置。於 充塡5 %硫酸之電鍍浴中，將上述聚合物薄膜以1 . 〇⑴/分鐘 之移動速度連續浸漬1分鐘，使得上述具有防止氧化效果 之基底層進行酸活化處理。其次，重覆水洗2回後，於上 述裝置之電鍍浴中充塡電鍍液（由硫酸銅9 0克/公升、硫 酸150克/公升、氯50ppm及Toplutina 380H (奧野製藥 工業（股）製）l〇cc/公升所構成），並將上述聚合物薄 膜以1 . 0 m /分鐘之移動速度連續浸漬，且於液溫2 9 °C，由 流密度4A/dm2之條件下電鍍4分鐘，則可於前述具有防 止氧化效果之基底層504上形成厚度3·5μπι之Cu所構成 的第一掩蔽層5 0 3 a。接著，重覆水洗3回，以吹風機瀝 水後以6 0 0 °C乾燥1分鐘。 其次於該連續電鍍裝置之電鍍浴中充塡電鍍液（由硫 酸鎳24 0克/公升、氯化鎳50克/公升、硼酸40克/公升、 硫酸亞鐵 20 克 /公升及 Ferroallog FA ( Ebaraudilite (股 (23) 200417309 )製）70cc/£所構成’ ρΗ3·8 )，並將上述聚合物薄膜以 1 · 0 m /分鐘之移動速度連續浸漬，且於液溫5 5 °C，電流密 度4 A / d m2之條件下電鍍5分鐘，則可於前述第一掩蔽層 5 0 j a上形成厚度4 _ 5 μ m之n i和F e所組成合金所構成的 第二掩蔽層5 0 3 b。接著，更覆水洗3回，以吹風機瀝水 後以6 0 °C乾燥1分鐘。This embodiment relates to an electromagnetic wave masking material in which a masking layer is formed on both surfaces of a polymer film. Hereinafter, it will be described with reference to FIG. 5. A 25 μm-thick PET film as a polymer film 501 was cut into a width of 250 mm and a length of 1,000 m, and was wound with a stainless steel core, and assembled into a delivery shaft in a sputtering device chamber. The front end thereof is attached to the take-up shaft with a polyimide tape with an adhesive attached. After that, the chamber was made into a 4 X 1 (T2pa vacuum state) with a vacuum pump, and the driving drum, the sending shaft and the winding shaft with a cooling device were respectively rotated around the polymer film at a speed of 0.4 m / min. After that, the heater was used to set the temperature to 0 ° C, and the collision processing was performed at -24-(22) (22) 200417309 under the conditions of argon i 12 ⑹min and output Q 9kw. The moisture content of the film is vacuum dried so that it is less than Q · Q}%. Then, the first target and the second target in the above-mentioned room are respectively equipped with Ni, and argon is used for each 20cc / min, and the output power is each 8] ^ High magnetic wave magnetron sputtering Mn; ι, a base layer with an oxidation prevention effect thickness of 1 0 0 0 A is formed on the surface of the aforementioned polymer film 5 of the vacuum drying treatment 5 0 0 0 ′ The polymer film forming the base layer with the anti-oxidation effect was taken out from the sputtering device, and then installed in a continuous plating device. In a plating bath filled with 5% sulfuric acid, the polymer film was added at a rate of 1.0 ⑴ / min. Continuously immerse for 1 minute at the moving speed, so that the above has The base layer with anti-oxidation effect is subjected to acid activation treatment. Secondly, after repeated washing with water 2 times, the plating bath of the above device is filled with a plating solution (90 g / L of copper sulfate, 150 g / L of sulfuric acid, 50 ppm of chlorine and Toplutina 380H (made by Okuno Pharmaceutical Industry Co., Ltd.) 10cc / liter), and the polymer film was continuously immersed at a moving speed of 1.0 m / min, and the liquid temperature was 2 9 ° C. After plating for 4 minutes at a density of 4A / dm2, a first masking layer 5 0 3 a made of Cu having a thickness of 3.5 μm can be formed on the aforementioned base layer 504 having an anti-oxidation effect. Then, repeated washing 3 times Drain with a hair dryer and dry at 600 ° C for 1 minute. Next, fill the plating bath of the continuous electroplating device with a plating solution (240 g / L of nickel sulfate, 50 g / L of nickel chloride, and 40 g of boric acid). / L, Ferrous Sulfate 20 g / L, Ferroallog FA (Ebaraudilite (23 (2004) 30917)) 70cc / £ constituted 'ρΗ3 · 8', and the above polymer film was moved at 1.0 m / min Continuous impregnation at a speed of 5 5 ° C at a liquid temperature of 4 A / dm After plating under the conditions of 2 for 5 minutes, a second masking layer 5 0 3 b composed of an alloy of Ni and Fe can be formed on the aforementioned first masking layer 50 0 ja. Then, more Cover 3 times with water, drain with a hair dryer and dry at 60 ° C for 1 minute.
更且，對於如此形成第二掩蔽層之聚合物薄膜爲了連 續處理另一面’乃再度安裝至濺鍍裝置。其次，對該濺鍍 裝置之室內的桌一標的及第二標的分別裝配N i，且使用 氬氣各2 0 0 c c /分鐘、輸出功率各8 k \V之高磁波磁控管濺 鑛N i ’於則述聚合物薄膜5 0 1之另一表面上形成厚度 1800A的基底層502。Furthermore, the polymer film thus formed with the second masking layer is mounted on the sputtering device again for continuous processing of the other side '. Secondly, Ni and Ni of the first table and the second table of the sputtering apparatus are equipped with Ni, and high magnetic wave magnetron sputtering argon at 200 kcc / min and output power of 8 k \ V each is used. i ′ A base layer 502 having a thickness of 1800 A is formed on the other surface of the polymer film 501.
其後，將如此形成基底層之聚合物薄膜由濺鍍裝置中 取出，接著安裝至連續電鍍裝置。於充塡5 %硫酸之電鍍 浴中，將上述聚合物薄膜以1 . 〇 m /分鐘之移動速度連續浸 漬1分鐘，使得上述基底層進行酸活化處理。其次，重覆 水洗2回後，於上述裝置之電鍍浴中充塡電鍍液（由硫酸 鎳2 4 0克/公升、氯化鎳5〇克/公升、硼酸4〇克/公升、硫 酸亞鐵 20 克 / 公升及 Ferroallog FA(EbaraudiIite (股） 製）70cc/彳所構成，pH3.8) ’並將上述聚合物薄膜以 1 . 0 m /分鐘之移動速度連續浸漬，且於液溫5 5 °C，電流密 度4 A/dm2之條件下電鍍5分鐘，則可於前述基底層502 上形成厚度4·3μΓα之Ni和Fe所組成合金（Ni: Fe = 7〇: 3 0 )所構成的第三掩蔽層5 0 3 c。接著，重覆水洗3回， -26- (24) 200417309 以吹風機瀝水後以6 0 °C乾燥1分鐘，取得圖5所示之本 發明的電磁波掩蔽材料。After that, the polymer film thus formed with the base layer was taken out of the sputtering apparatus, and then mounted to a continuous plating apparatus. In a plating bath filled with 5% sulfuric acid, the above polymer film was continuously immersed for 1 minute at a moving speed of 1.0 m / min, so that the above-mentioned base layer was subjected to acid activation treatment. Next, after washing twice with water, the plating bath of the above device was filled with a plating solution (consisting of 240 g / liter of nickel sulfate, 50 g / liter of nickel chloride, 40 g / liter of boric acid, and ferrous sulfate). 20 g / L and Ferroallog FA (made by EbaraudiIite (stock)) 70cc / 彳, pH 3.8) 'and the polymer film was continuously dipped at a moving speed of 1.0 m / min, and the liquid temperature was 5 5 ° C, electroplating at a current density of 4 A / dm2 for 5 minutes, an alloy consisting of Ni and Fe (Ni: Fe = 70: 30) formed on the aforementioned base layer 502 with a thickness of 4 · 3μΓα The third masking layer 50 3 c. Next, washing was repeated three times, and -26- (24) 200417309 was drained with a hair dryer and dried at 60 ° C for 1 minute to obtain the electromagnetic wave shielding material of the present invention shown in FIG. 5.
將如此處理所得之電磁波掩蔽材料，使用移相振動器 一邊分別照射1 〇 〇〜2 0 0赫及1〜2千兆赫之電磁波，—邊以 示波器進行測定時，於未照射電磁波之面並未檢測出 ]0 0〜2 0 0赫及1〜2千兆赫兩者的電磁波。因此，上述所得 之電磁波掩蔽材料可做爲低周波數及高周波數兩者用之電 磁波掩蔽材料使用於各種用途。又，該電磁波掩蔽材料因 爲可撓性亦優良，故於輕薄短小化之各種製品中亦可廣泛 使用。 (實施例6 )The electromagnetic wave masking material obtained in this way was irradiated with electromagnetic waves of 1000 to 2000 Hz and 1 to 2 gigahertz using a phase-shift vibrator. When measuring with an oscilloscope, Detected electromagnetic waves of 0 to 200 Hz and 1 to 2 GHz. Therefore, the electromagnetic wave masking material obtained above can be used as an electromagnetic wave masking material for both low-frequency and high-frequency waves, and can be used in various applications. In addition, since the electromagnetic wave shielding material is also excellent in flexibility, it can be widely used in various products that are thinner, lighter and shorter. (Example 6)
於上述實施例1、2、3、4及5中，除了進行以離子 槍照射離子做爲前處理，代替對於聚合物薄膜所進行的碰 撞處理以外，其他完全同此些實施例處理，取得電磁波掩 蔽材料。 具體而言，於各個實施例中，經由使用安裝離子槍之 濺鍍裝置，代替濺鍍裝置中安裝的加熱器碰撞處理部，於 氬氣100cc/分鐘、電源0.5kw/dm2、真空度2χ1〇·!Ρη之條 件下，照射氬離子進行前處理。 如此處理所得之各電磁波掩蔽材料雖於掩蔽效果上與 實施例1、2、3、4及5者無變化，但聚合物薄膜、與基 底層及掩蔽層的密合性更加提高。因此，可令各種製品的 適用範圍更加朝向廣範圍。 (25) 200417309 產業上之可利用性 本發明之電磁波掩蔽材料因爲經由減薄其厚度而具有 深具有可撓性的性狀，故亦可應付輕薄短小化的各種製品 。又，本發明之電磁波掩蔽材料視需要可對低周波數及高 周波數兩者電磁波予以同時掩蔽。In the above-mentioned embodiments 1, 2, 3, 4, and 5, except that the ion gun is used to irradiate ions as a pretreatment, instead of the collision treatment performed on the polymer film, the other processes are completely the same as those in this embodiment to obtain electromagnetic waves. Masking material. Specifically, in each embodiment, a sputtering device using an ion gun was used instead of the heater collision processing section installed in the sputtering device. The argon gas was 100 cc / min, the power source was 0.5 kw / dm2, and the vacuum degree was 2 × 1. • Under the conditions of Pn, argon ions are irradiated for pretreatment. Although each of the electromagnetic wave masking materials obtained in this way has the same masking effect as that of Examples 1, 2, 3, 4, and 5, the adhesion between the polymer film, the substrate, and the masking layer is further improved. Therefore, the applicable range of various products can be further extended to a wide range. (25) 200417309 Industrial applicability The electromagnetic wave shielding material of the present invention has a deep flexible property by reducing its thickness, so it can also cope with various products that are thinner and shorter. In addition, the electromagnetic wave masking material of the present invention can simultaneously shield both low frequency and high frequency electromagnetic waves if necessary.
【圖式簡單說明】 圖1爲於聚合物薄膜之表面形成基底層，且於其上形 成掩蔽層之電磁波掩蔽材料的槪略截面圖。 圖2爲於聚合物薄膜之表面形成具有防止氧化效果的 基底層，且於其上形成作用爲電極的第二層基底層，並於 其上形成掩蔽層之電磁波掩蔽材料的槪略截面圖。[Brief description of the drawings] FIG. 1 is a schematic cross-sectional view of an electromagnetic wave masking material in which a base layer is formed on a surface of a polymer film and a masking layer is formed thereon. Fig. 2 is a schematic cross-sectional view of an electromagnetic wave shielding material in which a base layer having an oxidation prevention effect is formed on a surface of a polymer film, a second base layer serving as an electrode is formed thereon, and a masking layer is formed thereon.
圖3爲於聚合物薄膜之表面形成具有防止氧化效果的 基底層，且於其上形成作用爲電極的第二層基底層，並於 其上形成掩蔽層，再於其上形成防止變色層之電磁波掩蔽 材料的槪略截面圖。 圖4爲於聚合物薄膜之表面形成具有防止氧化效果的 基底層，且於其上形成三層掩蔽層之電磁波掩蔽材料的槪 略截面圖。 圖5爲於聚合物薄膜之表裏兩面形成掩蔽層之電磁波 掩蔽材料的槪略截面圖。 【主要元件對照表】 -28 - (26)200417309 10 1 聚合物薄膜 1 02 基底層 1 03 掩蔽層 20 1 聚合物薄膜 202 基底層 203 掩蔽層 204 基底層 3 0 1 聚合物薄膜 3 02 基底層 3 03 掩蔽層 3 04 基底層 3 05 防止變色層 40 1 聚合物薄膜 4 0 3 a 第一掩蔽層 4 0 3 b 第二掩蔽層 4 0 3 c 第三掩蔽層 404 基底層 5 0 1 聚合物薄膜 5 02 基底層 5 0 3 a 第一掩蔽層 5 0 3 b 第二掩蔽層 5 0 3 c 第三掩蔽層 5 04 基底層FIG. 3 shows the formation of a base layer with an anti-oxidation effect on the surface of a polymer film, a second base layer serving as an electrode is formed thereon, a masking layer is formed thereon, and a discoloration preventing layer is formed thereon. A schematic cross-sectional view of an electromagnetic wave shielding material. Fig. 4 is a schematic cross-sectional view of an electromagnetic wave masking material in which a base layer having an oxidation prevention effect is formed on the surface of a polymer film, and three masking layers are formed thereon. Fig. 5 is a schematic cross-sectional view of an electromagnetic wave masking material in which a masking layer is formed on both surfaces of a polymer film. [Comparison table of main components] -28-(26) 200417309 10 1 Polymer film 1 02 Base layer 1 03 Masking layer 20 1 Polymer film 202 Base layer 203 Masking layer 204 Base layer 3 0 1 Polymer film 3 02 Base layer 3 03 masking layer 3 04 base layer 3 05 discoloration preventing layer 40 1 polymer film 4 0 3 a first masking layer 4 0 3 b second masking layer 4 0 3 c third masking layer 404 base layer 5 0 1 polymer Film 5 02 Base layer 5 0 3 a First masking layer 5 0 3 b Second masking layer 5 0 3 c Third masking layer 5 04 Base layer
-29--29-
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| JPH06177571A (en) * | 1992-12-01 | 1994-06-24 | Fujitsu Kasei Kk | Electronic equipment case and manufacture thereof |
| JP2817891B2 (en) * | 1993-11-08 | 1998-10-30 | 中外イングス株式会社 | Manufacturing method of electromagnetic wave shielding plastic molded products |
| JP2000212315A (en) * | 1999-01-22 | 2000-08-02 | Matsushita Electric Ind Co Ltd | Double-side metallized film |
| JP2001200376A (en) * | 2000-01-20 | 2001-07-24 | Hakuto Kagi Kofun Yugenkoshi | Method for depositing electro-magnetic wave shield film |
-
2002
- 2002-10-01 JP JP2002288995A patent/JP2004128158A/en active Pending
-
2003
- 2003-09-25 AU AU2003266635A patent/AU2003266635A1/en not_active Abandoned
- 2003-09-25 WO PCT/JP2003/012293 patent/WO2004032590A1/en active Application Filing
- 2003-09-30 TW TW92127041A patent/TWI225768B/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104608437A (en) * | 2015-02-05 | 2015-05-13 | 吴江市金桥纺织品有限公司 | Soft nano-shielding film and production method thereof |
| CN107432102A (en) * | 2015-03-31 | 2017-12-01 | 捷客斯金属株式会社 | Electromagnetic shielding material |
| TWI611918B (en) * | 2015-03-31 | 2018-01-21 | Jx Nippon Mining & Metals Corp | Electromagnetic wave shielding material |
| US10272646B2 (en) | 2015-03-31 | 2019-04-30 | Jx Nippon Mining & Metals Corporation | Electromagnetic shielding material |
| CN107432102B (en) * | 2015-03-31 | 2019-07-30 | 捷客斯金属株式会社 | Electromagnetic shielding material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004128158A (en) | 2004-04-22 |
| AU2003266635A1 (en) | 2004-04-23 |
| WO2004032590A1 (en) | 2004-04-15 |
| TWI225768B (en) | 2004-12-21 |
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