JP2000212315A - Double-side metallized film - Google Patents

Double-side metallized film

Info

Publication number
JP2000212315A
JP2000212315A JP1387599A JP1387599A JP2000212315A JP 2000212315 A JP2000212315 A JP 2000212315A JP 1387599 A JP1387599 A JP 1387599A JP 1387599 A JP1387599 A JP 1387599A JP 2000212315 A JP2000212315 A JP 2000212315A
Authority
JP
Japan
Prior art keywords
metal
polymer film
vapor deposition
double
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1387599A
Other languages
Japanese (ja)
Inventor
Shinichi Kato
新一 加藤
Kazuo Iwaoka
和男 岩岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1387599A priority Critical patent/JP2000212315A/en
Publication of JP2000212315A publication Critical patent/JP2000212315A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a double-side metallized film excellent in an attenuation effect of an electrical field shielding characteristic and a magnetic field shielding characteristic and useful for electrical equipment, etc., by forming metallized layers on both sides of a polymer film base by a specified metallizing process. SOLUTION: This double-side metallized film is obtained by forming metallized layers on a wide continuously long polymer film base by a vacuum metallizing process equipped with a semi-continuous winder, wherein the metallized layers 6 and 7 are formed on both sides of the polymer film base 1 by using a metal having an electric resistivity of S <=10 μΩ.cm at 20 deg.C for the metallized layer. Polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfide, polyimide, polyether-imide or polyaramide film is preferably used as the polymer film, and a single metal selected from aluminum (Al), copper (Cu), gold (Au) and silver (Ag) is preferably used as the metal.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電気機器や電子機
器に関するもので、電磁波シールドや静電気シールド用
のシールド材や電子回路基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric device and an electronic device, and more particularly to a shielding material for an electromagnetic wave shield and an electrostatic shield and an electronic circuit board.

【0002】[0002]

【従来の技術】電気機器や電子機器の高機能・高精度
化、高周波数化、デジタル化や、携帯電話に代表される
移動体無線機器の進展に伴ってこれらを構成する電子部
品の高密度化が急速に進展してきた。
2. Description of the Related Art With the advancement of high-performance, high-precision, high-frequency, and digitization of electric and electronic devices, and the development of mobile radio devices represented by mobile phones, the density of electronic components constituting these devices has increased. Is rapidly evolving.

【0003】シールド材、電子回路基板を構成する最も
一般的な材料構成としては、高分子フィルム、接着剤、
金属箔を使用している。この構造は、高分子フィルム上
に接着剤を介して金属箔をラミネートしたものが従来か
ら提案されている。
[0003] The most common materials constituting a shielding material and an electronic circuit board include a polymer film, an adhesive,
Uses metal foil. This structure has conventionally been proposed in which a metal foil is laminated on a polymer film via an adhesive.

【0004】ところが近年は機器の高密度化が進展、こ
れに伴なって電子回路内の線幅や線間の狭ピッチ化が進
展している。又、機器からの不要電磁波の発生や機器に
進入する電磁波ノイズが多く、電磁波のシールド技術が
重要になってきた。
However, in recent years, the density of devices has been increased, and accordingly, the line width in electronic circuits and the pitch between lines have been narrowed. In addition, generation of unnecessary electromagnetic waves from the equipment and electromagnetic noise entering the equipment are many, so that the electromagnetic wave shielding technology has become important.

【0005】シールド材においては、薄く、軽くかつ優
秀なシールド特性を持ったものが望まれている。従来よ
り提案されているフレキシブルシールド材や電子回路基
板材料は、図1に示す如く金属を箔状に形成した金属3
と高分子フィルム基板1を接着剤2を介して接着ラミネ
ートしたものである。
It is desired that the shielding material is thin, light, and has excellent shielding characteristics. Conventionally proposed flexible shielding materials and electronic circuit board materials include a metal 3 formed by forming a metal in a foil shape as shown in FIG.
And a polymer film substrate 1 bonded and laminated with an adhesive 2 interposed therebetween.

【0006】図2に従来例として示す金属を箔状に形成
した金属3と高分子フィルム基板1を接着剤2を介して
片面に接着ラミネートし、更に裏面に金属を箔状に形成
した金属5を接着剤4を介して接着ラミネートしたもの
を示す。
FIG. 2 shows a conventional example in which a metal 3 formed in a foil shape of a metal and a polymer film substrate 1 are bonded and laminated on one surface via an adhesive 2 and a metal 5 formed in a foil shape on the back surface. Is laminated by bonding via an adhesive 4.

【0007】図3に従来例として示す高分子フィルム基
板上1に蒸着法により直接金属層6を形成したものを示
す。
FIG. 3 shows a structure in which a metal layer 6 is directly formed on a polymer film substrate 1 shown as a conventional example by a vapor deposition method.

【0008】[0008]

【発明が解決しようとする課題】しかし、これらの構造
を持ったシールド材や電子回路基板は、ラミネートタイ
プでは接着剤を介しているため、高温使用時における接
着剤の耐熱性や電子回路の狭ピッチ化による線間が狭く
なった場合の接着剤による金属のマイグレーションによ
る線間ショートの問題が発生する課題がある。又、高分
子フィルム基板上に直接金属蒸着層を形成するもので
は、片面蒸着フィルムでは電磁波シールド特性に難点が
ある。
However, since the shielding material and the electronic circuit board having such a structure are provided with an adhesive in the laminate type, the heat resistance of the adhesive at the time of use at a high temperature and the narrowness of the electronic circuit are reduced. There is a problem that a short circuit between lines occurs due to migration of metal due to an adhesive when the space between lines becomes narrow due to the pitch. In the case where a metal vapor deposition layer is formed directly on a polymer film substrate, a single-side vapor deposition film has a drawback in electromagnetic wave shielding characteristics.

【0009】[0009]

【課題を解決するための手段】本発明は、これらの課題
を解決するための手段として高分子フィルム基板上に半
連続巻き取り式真空蒸着法で金属蒸着層を基板の両面に
形成することを特長とする両面蒸着フィルムを提供する
ものである。
According to the present invention, as a means for solving these problems, a metal vapor deposition layer is formed on both surfaces of a polymer film substrate by a semi-continuous winding vacuum vapor deposition method. A feature is to provide a double-sided evaporated film as a feature.

【0010】[0010]

【発明の実施の形態】本発明は、半連続巻き取り式真空
蒸着法で高分子フィルム基板を連続走行させながら蒸着
用ドラム1上で該高分子フィルム基板の表面上に金属蒸
着層を形成して片面蒸着フィルムとし、連続して別の蒸
着用ドラム2上で該蒸着フィルムの裏面に金属蒸着層を
形成したものである。
BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, a metal vapor deposition layer is formed on the surface of a polymer film substrate on a vapor deposition drum 1 while continuously running the polymer film substrate by a semi-continuous winding vacuum vapor deposition method. A metallized layer is continuously formed on another vapor deposition drum 2 on the back surface of the vapor-deposited film.

【0011】以下本発明の内容について実施例にて詳細
な説明をする。
Hereinafter, the contents of the present invention will be described in detail with reference to embodiments.

【0012】[0012]

【実施例】図5に本発明両面蒸着フィルムの製造方法を
示す。
FIG. 5 shows a method for producing a double-sided deposited film of the present invention.

【0013】図5において、真空蒸着機を構成する真空
槽10は仕切り板13によりフィルム基板がセットさ
れ、真空蒸着中は通常10―1(Pa)以下に保たれる
上室11部と真空蒸着が行われる真空蒸着中は通常10
―2(Pa)以下に保たれる下室12部に分離構成され
ている。上室11は真空バルブ14を経て排気管15に
より真空排気されている。下室12は真空バルブ16を
経て排気管17により真空排気されている。
In FIG. 5, a film substrate is set by a partition plate 13 in a vacuum chamber 10 constituting a vacuum vapor deposition machine. During vacuum vapor deposition, an upper chamber 11 which is usually kept at 10-1 (Pa) or less and a vacuum vapor deposition Is usually 10 during vacuum deposition where
−2 (Pa) or less and is separated into 12 lower chambers. The upper chamber 11 is evacuated by an exhaust pipe 15 via a vacuum valve 14. The lower chamber 12 is evacuated by an exhaust pipe 17 via a vacuum valve 16.

【0014】フィルム基板への金属蒸着は上室11に設
けられた巻き出し軸18にセットされた高分子フィルム
19を、高分子フィルムを冷却するための蒸着ドラム2
0の外表面に入り蒸着ドラムの外表面と密着した後蒸着
ドラム20と同期して回転方向Aに走行をする。
Metal vapor deposition on the film substrate is performed by using a polymer film 19 set on an unwinding shaft 18 provided in the upper chamber 11 and a vapor deposition drum 2 for cooling the polymer film.
After entering the outer surface of the vapor deposition drum and making close contact with the outer surface of the vapor deposition drum, it travels in the rotation direction A in synchronization with the vapor deposition drum 20.

【0015】蒸着ドラム20の冷却は高分子フィルムの
冷却効果を高めるために蒸着ドラムの内部に−20℃の
冷却媒体を循環させた。
The cooling of the vapor deposition drum 20 was achieved by circulating a cooling medium at -20 ° C. inside the vapor deposition drum in order to enhance the cooling effect of the polymer film.

【0016】下室12に設けられた蒸着部は蒸着ドラム
への蒸着金属の飛散防止のため蒸着分離板31、蒸着分
離板32を設けた。蒸着ドラム20と同期して回転方向
Aに走行する高分子フィルムは、下室部蒸着ドラム20
と対向して設けられた耐火物よりなる蒸発源容器23内
に収納された金属33を電子ビーム加熱源22により加
熱溶融して金属蒸発蒸気24として高分子フィルム上に
付着、堆積させ蒸着層を形成する。この後、図示された
片面に蒸着層を形成した片面蒸着フィルム21はフリー
ローラー34、35を通り反転され、蒸着ドラム20で
蒸着されていない面(裏面)に下室部蒸着ドラム28と
同期して回転方向Bに走行する片面蒸着フィルム21
は、下室部蒸着ドラム28と対向した設けられた耐火物
よりなる蒸発源容器26内に収納された金属34を電子
ビーム加熱源25により加熱溶融して金属蒸発蒸気27
として片面蒸着フィルム21の裏面上に付着、堆積させ
蒸着層を形成する。両面蒸着層を形成した蒸着フィルム
29は、巻き取り軸30に巻き取られる。
The vapor deposition section provided in the lower chamber 12 is provided with a vapor deposition separation plate 31 and a vapor deposition separation plate 32 for preventing the vapor deposition metal from scattering on the vapor deposition drum. Rotation direction in synchronization with deposition drum 20
The polymer film traveling to A is the lower chamber evaporation drum 20
The metal 33 accommodated in the evaporation source container 23 made of a refractory provided opposite to the above is heated and melted by the electron beam heating source 22 and attached and deposited on the polymer film as the metal evaporation vapor 24 to form a vapor deposition layer. Form. Thereafter, the single-sided vapor deposition film 21 having the vapor deposition layer formed on one side as shown is reversed through free rollers 34 and 35 and is synchronized with the lower chamber vapor deposition drum 28 on the surface (rear surface) where the vapor deposition drum 20 is not vapor-deposited. -Side deposited film 21 traveling in the rotation direction B
Heats and melts a metal 34 contained in an evaporation source container 26 made of a refractory provided opposite to a lower chamber evaporation drum 28 by an electron beam heating source 25 so that a metal evaporation vapor 27
Is deposited and deposited on the back surface of the single-sided vapor deposition film 21 to form a vapor deposition layer. The vapor deposition film 29 on which the both-side vapor deposition layer is formed is wound around a winding shaft 30.

【0017】このようにして制作された両面蒸着フィル
ムは大気中に取り出され、所定の幅、長さや形状に加工
されて、シールド材や電子回路基板として用いられる。
The double-sided vapor-deposited film produced in this manner is taken out to the atmosphere, processed into a predetermined width, length and shape, and used as a shielding material or an electronic circuit board.

【0018】(実施例1)図4に実施例により製造され
た両面蒸着フィルムの構造を示す。
Example 1 FIG. 4 shows the structure of a double-sided vapor-deposited film manufactured according to an example.

【0019】高分子フィルム1の表面に真空蒸着法によ
り金属蒸着層6を形成し、高分子フィルム1の裏面に真
空蒸着法により金属蒸着層7を形成したものである。
A metal deposition layer 6 is formed on the surface of the polymer film 1 by a vacuum deposition method, and a metal deposition layer 7 is formed on the back surface of the polymer film 1 by a vacuum deposition method.

【0020】[0020]

【発明の効果】本発明の構成をした両面蒸着フィルムの
シールド特性及び、従来から提案されている片面蒸着フ
ィルムのシールド特性をKEC法にて測定した1GHz
における電界の減衰特性結果を表1、同様にKEC法に
て測定した1GHzにおける磁界の減衰特性結果を表2
に示す。
According to the present invention, the shielding properties of a double-sided evaporated film having the structure of the present invention and the shielding properties of a conventionally proposed single-sided evaporated film are measured at 1 GHz by the KEC method.
Table 1 shows the results of the electric field attenuation characteristics at 1 GHz, and Table 2 shows the results of the magnetic field attenuation characteristics at 1 GHz similarly measured by the KEC method.
Shown in

【0021】尚、今回のシールド特性測定の本発明の構
成をした両面蒸着フィルムの仕様は、高分子フィルム1
にポリエチレンテレフタレート(PET)16μm、蒸
着金属6に銅(Cu)0.6μm、蒸着金属7に銅(C
u)0.6μmを用いた。又、従来から提案されている
片面蒸着フィルムの仕様は、高分子フィルム1にポリエ
チレンテレフタレート(PET)16μm、蒸着金属6
に銅(Cu)0.6μmを用いた。
The specification of the double-sided vapor deposition film having the configuration of the present invention for measuring the shield characteristics in this case is as follows.
16 μm of polyethylene terephthalate (PET), 0.6 μm of copper (Cu) for the metal 6 and copper (C) for the metal 7
u) 0.6 μm was used. The specifications of a conventionally proposed single-sided vapor deposition film are as follows: a polymer film 1 is made of polyethylene terephthalate (PET) 16 μm;
0.6 μm of copper (Cu) was used.

【0022】尚、(表1)、(表2)において初期とは
本発明の構成をした蒸着フィルム及びシールド材製造
後、常温常圧下で保管されたものである。
In Tables 1 and 2, the term "initial" refers to a value obtained by producing a vapor-deposited film and a shield material having the structure of the present invention and then storing the film under normal temperature and normal pressure.

【0023】[0023]

【表1】 [Table 1]

【0024】[0024]

【表2】 [Table 2]

【0025】(表1)に示されたごとく1GHzにおけ
る電界シールド特性の減衰効果は片面蒸着フィルムに比
べ良好であった。
As shown in Table 1, the attenuation effect of the electric field shielding characteristics at 1 GHz was better than that of the single-sided vapor-deposited film.

【0026】又、(表2)に示されたごとく1GHzに
おける磁界シールド特性の減衰効果は片面蒸着フィルム
に比べ良好であった。
Further, as shown in Table 2, the attenuation effect of the magnetic field shielding characteristics at 1 GHz was better than that of the single-sided vapor-deposited film.

【0027】この様に高分子フィルムの両面に金属層を
蒸着により形成した本発明両面蒸着フィルムは、片面蒸
着フィルムに比べ優れたシールド特性を持つものであ
る。また、本発明両面蒸着フィルムを使用した電子回路
基板は、接着剤を使用していないため、狭ピッチの高密
度配線が可能になることや、片面を電子回路基板、他の
片面をシールドとして使用することにより、電子回路と
シールドを一体化することが可能であり小型、軽量化が
図れた。
As described above, the double-sided vapor-deposited film of the present invention in which the metal layers are formed on both sides of the polymer film by evaporation has excellent shielding properties as compared with the single-sided vapor-deposited film. Also, since the electronic circuit board using the double-sided vapor deposition film of the present invention does not use an adhesive, high-density wiring with a narrow pitch is possible, and one side is used as an electronic circuit board and the other side is used as a shield. By doing so, the electronic circuit and the shield can be integrated, and the size and weight can be reduced.

【0028】従って本発明によれば、1.接着剤を使用
していないため高温での連続使用に耐える、2.薄い、
軽い、屈曲性に富む、3.半連続巻き取り式蒸着法で製
造できるため、長尺の両面蒸着フィルムが比較的短時間
で製造できる。
Therefore, according to the present invention: 1. No continuous use at high temperatures because no adhesive is used. thin,
2. Light and flexible. Since it can be manufactured by a semi-continuous winding evaporation method, a long double-sided evaporation film can be manufactured in a relatively short time.

【0029】従って、低コストの製品が供給でき、工業
的な価値が高い等の特徴を有した発明である。
Therefore, the invention is characterized in that a low-cost product can be supplied and the industrial value is high.

【0030】尚、本文の詳細な説明で具体的な材料、寸
法について記述したが本発明がこれらに限定されるもの
ではない。特に高分子フィルム基板上についてはPET
を例に挙げて説明したが、高分子フィルム基板にポリエ
チレンテレフタレート(PET)、ポリエチレンナフタ
レート(PEN)、ポリフェニレンサルファイド(PP
S)、ポリイミド(PI)、ポリエーテルイミド(PE
I)、ポリアラミドを用いて本発明構造のシールド材を
製造、耐候性試験を実施したがポリエチレンテレフタレ
ート(PET)と同様な結果が得られた。又、蒸着金属
がアルミ(Al)、金(Au)、銀(Ag)、でも銅
(Cu)と同様の効果が得られた。
Although specific materials and dimensions have been described in the detailed description of the present invention, the present invention is not limited to these. PET on polymer film substrate
As an example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyphenylene sulfide (PP)
S), polyimide (PI), polyetherimide (PE
I), a shield material having the structure of the present invention was produced using polyaramid, and a weather resistance test was carried out. The same result as that of polyethylene terephthalate (PET) was obtained. Further, even when the deposition metal was aluminum (Al), gold (Au), or silver (Ag), the same effect as copper (Cu) was obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】従来例1を示す断面図FIG. 1 is a cross-sectional view showing Conventional Example 1.

【図2】従来例2を示す断面図FIG. 2 is a sectional view showing a conventional example 2;

【図3】従来例3を示す断面図FIG. 3 is a sectional view showing a conventional example 3;

【図4】本発明品で、高分子フィルム基板1上に金属蒸
着層6を形成し、裏面に金属蒸着層7を形成した構造を
示す図
FIG. 4 is a view showing a structure in which a metal vapor deposition layer 6 is formed on a polymer film substrate 1 and a metal vapor deposition layer 7 is formed on a back surface according to the present invention.

【図5】本発明シールド材の製造実施例を示す図FIG. 5 is a view showing a production example of the shield material of the present invention.

【符号の説明】 1 高分子フィルム基板 2 接着層 3 金属箔 4 接着層 5 金属箔 6 金属蒸着層 7 金属蒸着層[Description of Signs] 1 Polymer film substrate 2 Adhesive layer 3 Metal foil 4 Adhesive layer 5 Metal foil 6 Metal vapor deposited layer 7 Metal vapor deposited layer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) C23C 14/24 C23C 14/24 N Fターム(参考) 4F006 AA35 AA38 AA39 AA40 AB73 BA07 CA08 DA01 4F071 AA45 AA46 AA56 AA60 AA62 AB07 AB09 AH12 AH13 BB11 BC01 BC02 4K029 AA11 AA25 BA03 BA04 BA05 BA08 BB04 BC03 BD00 BD02──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI theme coat ゛ (Reference) C23C 14/24 C23C 14/24 NF term (Reference) 4F006 AA35 AA38 AA39 AA40 AB73 BA07 CA08 DA01 4F071 AA45 AA46 AA56 AA60 AA62 AB07 AB09 AH12 AH13 BB11 BC01 BC02 4K029 AA11 AA25 BA03 BA04 BA05 BA08 BB04 BC03 BD00 BD02

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 広幅、長尺の高分子フィルム基板上に半
連続巻き取り式真空蒸着法で金属の蒸着層を形成して成
る金属化フィルムにおいて、金属の蒸着層に電気抵抗率
が20℃において10(μΩ・cm)以下の金属を用い
て高分子フィルム基板の両面に該金属蒸着層を形成した
ことを特徴とする両面蒸着フィルム。
1. A metallized film formed by forming a metal vapor deposition layer on a wide and long polymer film substrate by a semi-continuous winding vacuum vapor deposition method, wherein the metal vapor deposition layer has an electric resistivity of 20 ° C. 3. A double-sided vapor-deposited film, wherein the metal-deposited layer is formed on both surfaces of a polymer film substrate using a metal of 10 (μΩ · cm) or less.
【請求項2】 高分子フィルムが、ポリエチレンテレフ
タレート(PET)、ポリエチレンナフタレート(PE
N)、ポリフェニレンサルファイド(PPS)ポリイミ
ド(PI)、ポリエーテルイミド(PEI)、ポリアラ
ミドであることを特徴とする請求項1記載の両面蒸着フ
ィルム。
2. The polymer film is made of polyethylene terephthalate (PET), polyethylene naphthalate (PE)
N), polyphenylene sulfide (PPS) polyimide (PI), polyetherimide (PEI), and polyaramid, the double-sided vapor-deposited film according to claim 1, wherein
【請求項3】 蒸着金属が、アルミ(Al)、銅(C
u)、金(Au)、銀(Ag)の中から選択された単一
の金属であることを特徴とする請求項1、2記載の両面
蒸着フィルム。
3. The method according to claim 1, wherein the metal deposited is aluminum (Al), copper (C
3. The double-sided vapor-deposited film according to claim 1, wherein the metal is a single metal selected from u), gold (Au), and silver (Ag).
JP1387599A 1999-01-22 1999-01-22 Double-side metallized film Pending JP2000212315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1387599A JP2000212315A (en) 1999-01-22 1999-01-22 Double-side metallized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1387599A JP2000212315A (en) 1999-01-22 1999-01-22 Double-side metallized film

Publications (1)

Publication Number Publication Date
JP2000212315A true JP2000212315A (en) 2000-08-02

Family

ID=11845410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1387599A Pending JP2000212315A (en) 1999-01-22 1999-01-22 Double-side metallized film

Country Status (1)

Country Link
JP (1) JP2000212315A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004032590A1 (en) * 2002-10-01 2004-04-15 Fcm Co., Ltd. Electromagnetic shielding material provided with shielding layer
JP2006049892A (en) * 2004-08-02 2006-02-16 Toray Saehan Inc Method and device for manufacturing laminated structure for flexible circuit board, where metal plated layer is formed by vacuum evaporation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004032590A1 (en) * 2002-10-01 2004-04-15 Fcm Co., Ltd. Electromagnetic shielding material provided with shielding layer
JP2006049892A (en) * 2004-08-02 2006-02-16 Toray Saehan Inc Method and device for manufacturing laminated structure for flexible circuit board, where metal plated layer is formed by vacuum evaporation

Similar Documents

Publication Publication Date Title
JP3570802B2 (en) Copper thin film substrate and printed wiring board
US7733626B2 (en) Passive device structure
JP6060854B2 (en) Surface treatment method for resin film and method for producing copper clad laminate including the same
CN101682982B (en) Wiring member and process for producing the same
JP6907123B2 (en) Manufacturing method of printed wiring board having a dielectric layer
JP4122541B2 (en) Shield material
JP2007221713A (en) High frequency transmission line
JP5995145B2 (en) Resin film surface treatment method, resin film deposition method, and metallized resin film substrate production method
JP5425801B2 (en) Metal foil with electric resistance film and manufacturing method thereof
JP2000212315A (en) Double-side metallized film
JP7285431B2 (en) Vacuum deposition apparatus and vacuum deposition method
JP6060836B2 (en) Surface treatment method for resin film and method for producing copper clad laminate including the same
KR20210079280A (en) Manufacturing apparatus and manufacturing method of a resin film with a metal film
JP2001288569A (en) Apparatus and method for plasma treatment
JP7172335B2 (en) Apparatus and method for manufacturing resin film substrate with metal film provided with ion beam processing means
JP6671050B2 (en) Copper foil with release film
JP7172334B2 (en) Apparatus and method for manufacturing resin film substrate with metal film provided with ion beam processing means
JP2000216591A (en) Shielding material
US20060258082A1 (en) Structure Of Embedded Capacitors And Fabrication Method Thereof
JPH01287999A (en) Printed wiring board
JP7285430B2 (en) Vacuum deposition apparatus and vacuum deposition method
JP2007180192A (en) Printed board and manufacturing method therefor
JP2008028468A (en) High-frequency transmission line and high-frequency filter
JP2004039455A (en) Metal deposition conductive thin film with conductive hole, and its manufacturing method and application
JP4045973B2 (en) Method for manufacturing printed wiring board