TW202002731A - Roughened copper foil, copper clad laminate and printed wiring board - Google Patents

Roughened copper foil, copper clad laminate and printed wiring board Download PDF

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TW202002731A
TW202002731A TW108118108A TW108118108A TW202002731A TW 202002731 A TW202002731 A TW 202002731A TW 108118108 A TW108118108 A TW 108118108A TW 108118108 A TW108118108 A TW 108118108A TW 202002731 A TW202002731 A TW 202002731A
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copper foil
roughened
copper
treatment
crystals
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TWI808183B (en
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細川眞
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日商納美仕有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/60Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
    • C23C22/63Treatment of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/78Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/82After-treatment
    • C23C22/83Chemical after-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00Coating not provided for in groups C23C2/00 - C23C24/00
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14Nitrogen-containing compounds
    • C23F11/149Heterocyclic compounds containing nitrogen as hetero atom
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2222/00Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
    • C23C2222/20Use of solutions containing silanes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

To provide a roughened copper foil which is capable of significantly improving the heat-resistant peel strength between itself and a thermoplastic resin that has low dielectric constant. A roughened copper foil that has a roughened surface on at least one side, said roughened surface being composed of needle-like crystals and/or plate-like crystals, which contain cuprous oxide and/or copper oxide. With respect to this roughened copper foil, the roughened surface has a cuprous oxide thickness of 71-300 nm as determined by sequential electrochemical reduction analysis (SERA) and a copper oxide thickness of 0-20 nm as determined by sequential electrochemical reduction analysis (SERA).

Description

粗化處理銅箔、貼銅層合板及印刷佈線板Roughened copper foil, copper-clad laminate and printed wiring board

本發明係關於一種粗化處理銅箔、貼銅層合板及印刷佈線板。The invention relates to a roughened copper foil, a copper-clad laminate and a printed wiring board.

適合形成細間距(fine pitch)電路之印刷佈線板銅箔,係已提案有一種粗化處理銅箔,其具有經過氧化處理及還原處理(以下總稱為氧化還原處理)而形成的微細凹凸作為粗化處理面。Copper foil for printed wiring boards suitable for forming fine pitch circuits has been proposed as a roughening copper foil, which has fine irregularities formed by oxidation treatment and reduction treatment (hereinafter collectively referred to as redox treatment) as coarse化处理面。 Treatment surface.

例如,專利文獻1(國際公開第2014/126193號)揭示一種表面處理銅箔,其表面具有粗化處理層,該粗化處理層係以最大長度為500nm以下之銅複合化合物組成之針狀微細凹凸所形成。又,專利文獻2(國際公開第2015/040998號)揭示一種銅箔,其至少一面具備粗化處理層及矽烷耦合劑處理層,該粗化處理層具有由銅複合化合物組成之最大長度為500nm以下的針狀凸部所形成的微細凹凸,該矽烷耦合劑處理層在該粗化處理層的表面。根據上述文獻的粗化處理銅箔,藉由粗化處理層之微細凹凸產生的錨定效應(anchor effect),可以得到對絕緣樹脂基材良好的密著性,且可以形成具備良好蝕刻因子之細間距電路。專利文獻1及2揭示之具有微細凹凸的粗化處理層,均為進行鹼性脫脂處理等預備處理後,經過氧化還原處理所形成。如此形成之微細凹凸具有銅複合化合物之針狀結晶及/或板狀結晶所構成的特有形狀,具備此微細凹凸之粗化處理面大致上而言比微細銅粒附著所形成之粗化處理面或以蝕刻賦予凹凸之粗化處理面更微細。For example, Patent Document 1 (International Publication No. 2014/126193) discloses a surface-treated copper foil having a roughened layer on the surface, the roughened layer being needle-shaped fine particles composed of a copper composite compound with a maximum length of 500 nm or less Concave and convex. In addition, Patent Document 2 (International Publication No. 2015/040998) discloses a copper foil having a roughening treatment layer and a silane coupling agent treatment layer on at least one side, the roughening treatment layer having a maximum length of 500 nm composed of a copper composite compound The fine concavo-convex formed by the following needle-shaped convex portions, the silane coupling agent treatment layer is on the surface of the roughening treatment layer. According to the roughened copper foil of the above-mentioned document, the anchor effect produced by the fine irregularities of the roughened layer can provide good adhesion to the insulating resin substrate and can form a layer with a good etching factor. Fine pitch circuit. The roughening treatment layers with fine irregularities disclosed in Patent Documents 1 and 2 are formed by performing preliminary treatment such as alkaline degreasing treatment and then undergoing oxidation-reduction treatment. The fine concavo-convex formed in this way has a unique shape composed of needle-like crystals and/or plate-like crystals of the copper composite compound, and the roughened surface provided with the fine concavo-convex is roughly larger than the roughened surface formed by the adhesion of fine copper particles Or the roughened surface provided with etching by the etching is finer.

另一方面,近年來隨著攜帶用電子機器之高性能化,為了高速處理大量資訊,訊號的高頻化持續發展,需要適用於高頻用途之印刷佈線板。這樣的高頻用印刷佈線板為了能夠傳輸高頻訊號而不降低品質,被要求降低傳輸損失。印刷佈線板係具備加工成佈線圖案之銅箔與絕緣樹脂基材,惟,傳輸損失主要係銅箔所導致的導體損失,以及絕緣樹脂基材所導致的介電質損失。因此,為了降低絕緣樹脂基材所導致的介電質損失,較佳係可使用低介電係數之熱塑性樹脂。然而,以聚四氟乙烯(PTFE)等氟樹脂或液晶聚合物(LCP)樹脂為代表的低介電係數之熱塑性樹脂與熱固性樹脂不同,化學活性低,故有與銅箔之密著性低的問題。On the other hand, in recent years, with the increasing performance of portable electronic devices, in order to process large amounts of information at high speed, the high frequency of signals continues to develop, and a printed wiring board suitable for high frequency applications is required. Such high-frequency printed wiring boards are required to reduce transmission loss in order to transmit high-frequency signals without degrading quality. The printed wiring board is equipped with copper foil processed into a wiring pattern and an insulating resin substrate. However, the transmission loss is mainly due to the conductor loss caused by the copper foil and the dielectric loss caused by the insulating resin substrate. Therefore, in order to reduce the dielectric loss caused by the insulating resin substrate, it is preferable to use a thermoplastic resin with a low dielectric constant. However, the low dielectric constant thermoplastic resins represented by fluororesins such as polytetrafluoroethylene (PTFE) or liquid crystal polymer (LCP) resins are different from thermosetting resins in that they have low chemical activity and therefore have low adhesion to copper foil. The problem.

作為解決此問題的貼銅層合板之製造方法,已提案有藉由控制粗化處理銅箔的粗化處理面之氧化狀態,來提升與熱塑性樹脂之密著力的手法。例如,專利文獻3(國際公開第2017/150043號)揭示對具有粗化處理面之粗化處理銅箔貼合熱塑性樹脂片之貼銅層合板的製造方法,該粗化處理面係具備以包含氧化銅及氧化亞銅之針狀結晶所構成的微細凹凸,專利文獻3記載此粗化處理面以連續電化學還原法(SERA)測定之氧化銅厚度為1~20nm,且以SERA測定之氧化亞銅厚度為15~70nm。根據此方法,提高粗化處理銅箔之粗化處理面與熱塑性樹脂之親和性,結果能實現高剝離強度。As a method for manufacturing the copper-clad laminate to solve this problem, there has been proposed a method of improving the adhesion with the thermoplastic resin by controlling the oxidation state of the roughened surface of the roughened copper foil. For example, Patent Document 3 (International Publication No. 2017/150043) discloses a method for manufacturing a copper-clad laminate to which a thermoplastic resin sheet is bonded to a roughened copper foil having a roughened surface, which is provided with Fine concavo-convex composed of needle-like crystals of copper oxide and cuprous oxide, Patent Document 3 describes that the roughened surface is measured by continuous electrochemical reduction (SERA) with a thickness of copper oxide of 1-20 nm, and the oxidation is measured by SERA Cuprous thickness is 15 ~ 70nm. According to this method, the affinity of the roughened surface of the roughened copper foil and the thermoplastic resin is improved, and as a result, high peel strength can be achieved.

專利文獻1為國際公開第2014/126193號,專利文獻2為國際公開第2015/040998號,專利文獻3為國際公開第2017/150043號。Patent Document 1 is International Publication No. 2014/126193, Patent Document 2 is International Publication No. 2015/040998, and Patent Document 3 is International Publication No. 2017/150043.

另外,近年來的汽車領域中,防撞機能等安全駕駛支援系統急速地普及,此系統中係活用毫米波感測器。因此,毫米波感測器等所使用的高頻用印刷佈線板的需求亦增加。就此點而言,車載用毫米波感測器係在引擎周圍的高溫條件下等被使用。因此,在這樣的嚴酷環境下使用之機器所搭載的印刷佈線板,由維持高可靠性的觀點而言,需要在暴露於長時間的高溫(例如150℃)後亦保持銅箔與樹脂之間的高密著力。然而,將以往的粗化處理銅箔貼合熱塑性樹脂之情況下,會因為長時間的加熱造成密著力降低,而需要進一步改善。In addition, in the automotive field in recent years, safe driving support systems such as collision avoidance functions are rapidly spreading, and millimeter wave sensors are utilized in this system. Therefore, the demand for high-frequency printed wiring boards used in millimeter wave sensors and the like has also increased. In this regard, vehicle-mounted millimeter wave sensors are used under high-temperature conditions around the engine. Therefore, from the viewpoint of maintaining high reliability, the printed wiring board mounted on a machine used in such a severe environment needs to be kept between the copper foil and the resin even after being exposed to a high temperature (such as 150°C) for a long time. High density. However, in the case of pasting a conventional roughened copper foil to a thermoplastic resin, the adhesion force is reduced due to long-term heating, and further improvement is required.

本發明人此次對於具有以針狀結晶及/或板狀結晶構成之粗化處理面的粗化處理銅箔,發現將以連續電化學還原法(SERA)測定之氧化亞銅厚度及氧化銅厚度分別控制在規定範圍內,藉此顯著地提升對低介電係數之熱塑性樹脂的耐熱剝離強度。The present inventors found that the thickness of the cuprous oxide and copper oxide measured by the continuous electrochemical reduction method (SERA) for the roughened copper foil having a roughened surface made of needle crystals and/or plate crystals The thickness is controlled within the specified range, thereby significantly improving the heat-resistant peel strength of the low dielectric constant thermoplastic resin.

因此,本發明的目的係提供一種粗化處理銅箔,其可明顯地提升對低介電係數之熱塑性樹脂的耐熱剝離強度。Therefore, an object of the present invention is to provide a roughened copper foil that can significantly improve the heat-resistant peel strength of a thermoplastic resin with a low dielectric constant.

根據本發明的一實施態樣,提供一種粗化處理銅箔,在至少一側具有粗化處理面,該粗化處理面係以包含氧化亞銅及/或氧化銅之針狀結晶及/或板狀結晶所構成,該粗化處理面以連續電化學還原法(SERA)測定之氧化亞銅厚度為71~300nm,且以連續電化學還原法(SERA)測定之氧化銅厚度為0~20nm。According to an embodiment of the present invention, there is provided a roughened copper foil having a roughened surface on at least one side, the roughened surface comprising needle-like crystals including cuprous oxide and/or copper oxide and/or The plate-shaped crystal is composed of the roughened surface. The thickness of the cuprous oxide measured by the continuous electrochemical reduction method (SERA) is 71 to 300 nm, and the thickness of the copper oxide measured by the continuous electrochemical reduction method (SERA) is 0 to 20 nm. .

根據本發明的其他實施態樣,提供一種貼銅層合板,具備上述粗化處理銅箔及設置於上述粗化處理銅箔的至少一側之絕緣樹脂基材。According to another embodiment of the present invention, there is provided a copper-clad laminate including the roughened copper foil and an insulating resin substrate provided on at least one side of the roughened copper foil.

本發明的其他實施態樣提供一種具備上述粗化處理銅箔之印刷佈線板。Another embodiment of the present invention provides a printed wiring board provided with the roughened copper foil.

《粗化處理銅箔》 本發明之銅箔為粗化處理銅箔。此粗化處理銅箔的至少一側具有粗化處理面。粗化處理面係以針狀結晶及/或板狀結晶構成。該等針狀結晶及/或板狀結晶係形成微細凹凸並形成粗化處理面。針狀結晶及/或板狀結晶包含氧化亞銅(Cu2 O)及依照需求來包含氧化銅(CuO)。亦即,氧化亞銅為必要成分,氧化銅為任意添加之成分。並且,此粗化處理面以連續電化學還原法(SERA)測定之氧化亞銅厚度為71~300nm,且以連續電化學還原法(SERA)測定之氧化銅厚度為0~20nm。像這樣,將以連續電化學還原法(SERA)測定之氧化亞銅厚度及氧化銅厚度分別控制在上述範圍內,藉此,可以顯著地提升對低介電係數之熱塑性樹脂的耐熱剝離強度。換言之,如上所述地將以往的粗化處理銅箔與熱塑性樹脂貼合的情況下,會因為引擎周圍的高溫條件等嚴酷環境下的長時間加熱導致密著力降低。使用之高溫處理所伴隨的銅箔及樹脂之間的剝離強度(即耐熱剝離強度)降低,被認為係構成銅箔之銅擴散至樹脂基材中所造成的。為防止銅擴散,一般係在銅箔表面施加鋅或鎳等金屬防鏽處理來進行,但對於聚四氟乙烯(PTFE)等熱塑性樹脂無法充分防止銅擴散。相較於此,本發明之粗化處理銅箔係在其粗化處理面具有以連續電化學還原法(SERA)換算厚度來測定之規定量的氧化亞銅,與純銅(Cu)相比較為穩定的氧化亞銅作為擴散防止層來作用,藉此有效地抑制銅擴散至熱塑性樹脂基材中。此外,構成粗化處理面之氧化亞銅係不導電的非導體成分,故即使為了提升與熱塑性樹脂之密著力而使粗度較大,在傳送高頻訊號時亦不易發生銅箔之集膚效應所導致的訊號衰減問題。結果得知,將本發明之粗化處理銅箔與低介電係數之熱塑性樹脂貼合形成貼銅層合板或印刷佈線板時,能夠顯著地降低高頻訊號的傳輸損失,發揮優異的耐熱剝離強度。"Roughening Copper Foil" The copper foil of the present invention is a roughening copper foil. At least one side of this roughened copper foil has a roughened surface. The roughened surface is composed of needle crystals and/or plate crystals. These needle crystals and/or plate crystals form fine irregularities and form roughened surfaces. The needle crystals and/or plate crystals include cuprous oxide (Cu 2 O) and copper oxide (CuO) as required. That is, cuprous oxide is an essential component, and copper oxide is an arbitrarily added component. In addition, the roughened surface has a thickness of cuprous oxide measured by the continuous electrochemical reduction method (SERA) of 71 to 300 nm, and a thickness of copper oxide measured by the continuous electrochemical reduction method (SERA) of 0 to 20 nm. In this way, the thickness of the cuprous oxide and the thickness of the copper oxide measured by the continuous electrochemical reduction method (SERA) are controlled within the above ranges, respectively, whereby the heat-resistant peel strength of the thermoplastic resin with a low dielectric constant can be significantly improved. In other words, when the conventional roughened copper foil is bonded to the thermoplastic resin as described above, the adhesion force is reduced due to long-term heating in a severe environment such as high-temperature conditions around the engine. The reduction in peel strength (ie, heat-resistant peel strength) between the copper foil and the resin accompanying the high-temperature treatment used is considered to be caused by the diffusion of copper constituting the copper foil into the resin substrate. In order to prevent the diffusion of copper, it is generally carried out by applying antirust treatment of metals such as zinc or nickel on the surface of the copper foil, but thermoplastic resins such as polytetrafluoroethylene (PTFE) cannot sufficiently prevent the diffusion of copper. Compared with this, the roughened copper foil of the present invention has a predetermined amount of cuprous oxide measured on the roughened surface by continuous electrochemical reduction (SERA) conversion thickness, compared with pure copper (Cu) The stabilized cuprous oxide acts as a diffusion prevention layer, thereby effectively suppressing the diffusion of copper into the thermoplastic resin base material. In addition, the cuprous oxide that forms the roughened surface is a non-conducting non-conductor component, so even if the roughness is large in order to enhance the adhesion with the thermoplastic resin, the skin of the copper foil is not likely to occur when transmitting high-frequency signals Signal attenuation caused by the effect. As a result, it has been found that when the roughened copper foil of the present invention and a low dielectric constant thermoplastic resin are laminated to form a copper-clad laminate or printed wiring board, the transmission loss of high-frequency signals can be significantly reduced, and excellent heat-resistant peeling can be exerted strength.

由上述觀點而言,粗化處理銅箔的粗化處理面以連續電化學還原法(SERA)測定之氧化亞銅厚度為71~300nm,較佳為100~300nm,更佳為120~300nm,又較佳為200~300nm,特佳為250~300nm。又,粗化處理銅箔的粗化處理面以連續電化學還原法(SERA)測定之氧化銅厚度為0~20nm,較佳為1~20nm,更佳為2~15nm,又較佳為3~10nm。藉此,能夠對粗化處理銅箔賦予所期望的耐酸性,並進一步提升與熱塑性樹脂之耐熱剝離強度。From the above point of view, the roughened surface of the roughened copper foil measured by the continuous electrochemical reduction method (SERA) has a thickness of cuprous oxide of 71 to 300 nm, preferably 100 to 300 nm, more preferably 120 to 300 nm, It is also preferably 200 to 300 nm, and particularly preferably 250 to 300 nm. In addition, the roughened surface of the roughened copper foil measured by the continuous electrochemical reduction method (SERA) has a copper oxide thickness of 0 to 20 nm, preferably 1 to 20 nm, more preferably 2 to 15 nm, and still more preferably 3 ~10nm. With this, the desired acid resistance can be imparted to the roughened copper foil, and the heat-resistant peel strength with the thermoplastic resin can be further improved.

用於測定上述氧化銅厚度及氧化亞銅厚度的SERA分析係可以使用市售的SERA分析裝置(例如ECI Technology公司製QC-100),用例如以下步驟來進行。首先,將粗化處理銅箔8.0mm2 之區域以O環墊片隔離以用於分析,注入硼酸緩衝溶液,用氮使其飽和。對上述區域施加30μA/cm2 之電流密度Id ,測量在-0.40V~-0.60V出現之Cu2 O還原反應及在-0.60V~-0.85V出現之CuO還原反應所需的時間,分別作為t1 及t2 (秒)。CuO及Cu2 O各自的厚度T(nm)係使用由法拉第定律求出的常數K,根據T=K‧Id ‧t之式子算出。又,與CuO有關之常數K的值為6.53×10-5 (cm3 /A‧sec),與Cu2 O有關之常數K的值為2.45×10-4 (cm3 /A‧sec)。The SERA analysis system for measuring the thickness of the copper oxide and the thickness of the cuprous oxide can be carried out using a commercially available SERA analysis device (for example, QC-100 manufactured by ECI Technology Co., Ltd.), for example, by the following procedure. First, the 8.0 mm 2 area of the roughened copper foil was isolated with an O-ring gasket for analysis, and boric acid buffer solution was injected and saturated with nitrogen. Apply a current density I d of 30 μA/cm 2 to the above area, and measure the time required for the Cu 2 O reduction reaction occurring at -0.40V to -0.60V and the CuO reduction reaction occurring at -0.60V to -0.85V, respectively As t 1 and t 2 (seconds). The thickness T (nm) of each of CuO and Cu 2 O is calculated using the constant K obtained by Faraday's law, according to the equation of T=K‧I d ‧t. In addition, the value of the constant K related to CuO is 6.53×10 -5 (cm 3 /A‧sec), and the value of the constant K related to Cu 2 O is 2.45×10 -4 (cm 3 /A‧sec).

構成粗化處理銅箔的粗化處理面之針狀結晶及/或板狀結晶係可經由氧化還原處理而形成,典型的針狀結晶及/或板狀結晶係可被觀察到相對於銅箔面略呈垂直之方向茂密地生長及/或於斜向茂密地生長的形狀(例如草皮狀)。針狀結晶及板狀結晶無相互明確區別的必要,可以是看似針狀的板狀結晶,亦可以是看似板狀的針狀結晶。The needle-like crystals and/or plate-like crystals constituting the roughening surface of the roughening-treated copper foil can be formed by redox treatment, and typical needle-like crystals and/or plate-like crystals can be observed relative to the copper foil The surface grows densely in a vertical direction and/or grows obliquely in a dense direction (such as turf). Needle crystals and plate crystals need not be clearly distinguished from each other, and may be plate crystals that look like needles or needle crystals that look like plates.

粗化處理銅箔較佳於兩側具有粗化處理面。換言之,粗化處理銅箔除了預定與樹脂貼合之面以外,較佳係在其相反側之面亦具有上述粗化處理面。藉此,在該相反側之面可以實現優異的雷射加工性。此被認為係由於構成粗化處理面之氧化亞銅與純銅相比,CO2 雷射吸收率較好,以及由於針狀結晶及/或板狀結晶形成之凹凸形狀,亦可得到將CO2 雷射藉由輻射吸收之效果。因此,進行直接雷射開孔加工對貼銅層合板之銅箔直接照射CO2 雷射形成貫孔時,藉由使施予該雷射照射之面作為上述粗化處理面,可不需在銅箔表面進行黑化處理等前處理,即可進行開孔加工,大幅提升生產性。The roughened copper foil preferably has roughened surfaces on both sides. In other words, in addition to the surface intended to be bonded to the resin, the roughened copper foil preferably has the roughened surface on the opposite side. With this, excellent laser processability can be achieved on the surface on the opposite side. This is considered to be because the cuprous oxide constituting the roughened surface has a better CO 2 laser absorption rate than pure copper, and the uneven shape formed by needle crystals and/or plate crystals can also obtain CO 2 The effect of laser absorption by radiation. Therefore, when direct laser drilling is performed on the copper foil of the copper-clad laminate to directly irradiate the CO 2 laser to form a through hole, by using the surface irradiated with the laser as the roughening surface, it is not necessary to Pre-treatments such as blackening treatment on the foil surface can be used for hole drilling, which greatly improves productivity.

粗化處理銅箔的厚度不特別限制,較佳為0.1~70μm,更佳為0.5~18μm。又,本發明之粗化處理銅箔不限於對一般銅箔的表面進行粗化處理者,亦可以係對附載體銅箔的銅箔表面進行粗化處理者。The thickness of the roughened copper foil is not particularly limited, but it is preferably 0.1 to 70 μm, and more preferably 0.5 to 18 μm. In addition, the roughened copper foil of the present invention is not limited to those that roughen the surface of a general copper foil, but may also roughen the surface of a copper foil with a carrier copper foil.

粗化處理銅箔較佳係在粗化處理面具有有機防鏽層。有機防鏽層不特別限制,較佳包含三唑化合物及矽烷耦合劑中的至少一種。三唑化合物例如有苯并三唑、羧基苯并三唑、甲基苯并三唑、胺基三唑、硝基苯并三唑、羥基苯并三唑、氯苯并三唑、乙基苯并三唑、萘并三唑。矽烷耦合劑例如有3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷等環氧官能基性矽烷耦合劑、或3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、N-2(胺基乙基)3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等胺基官能基性矽烷耦合劑、或3-巰基丙基三甲氧基矽烷等巰基官能基性矽烷耦合劑、或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等乙烯基官能基性矽烷耦合劑、或3-甲基丙烯醯氧基丙基三甲氧基矽烷等甲基丙烯基官能基性矽烷耦合劑、或3-丙烯醯氧基丙基三甲氧基矽烷等丙烯基官能基性矽烷耦合劑、或咪唑矽烷等咪唑官能基性矽烷耦合劑、或三嗪矽烷等三嗪官能基性矽烷耦合劑等。有機防鏽層更佳係包含三唑化合物,三唑化合物的較佳例可舉出苯并三唑(BTA)及羧基苯并三唑(CBTA)。在與粗化處理銅箔密著之熱塑性樹脂為氟樹脂之情況下,包含BTA、CBTA等三唑化合物之有機防鏽層特佳。三唑化合物較佳的理由係列舉如下。被認為係三唑化合物藉由與粗化處理表面的氧化亞銅形成銅錯合物,相較於形成在一般銅箔的情況,成分緻密地附著在表面,故可發揮優異的防鏽功能。因此,長時間保存粗化處理銅箔時的氧化銅厚度及氧化亞銅厚度可以容易地保持在上述規定的範圍內。又,暴露於高溫等嚴酷環境下的情況,被認為係藉由包含三唑化合物之有機防鏽層維持表面的微細凹凸,故可以維持高可靠性。The roughened copper foil preferably has an organic anti-rust layer on the roughened surface. The organic antirust layer is not particularly limited, and preferably contains at least one of a triazole compound and a silane coupling agent. Examples of triazole compounds include benzotriazole, carboxybenzotriazole, methylbenzotriazole, aminotriazole, nitrobenzotriazole, hydroxybenzotriazole, chlorobenzotriazole, and ethylbenzene Pyrogallazole, naphthotriazole. The silane coupling agent is, for example, epoxy functional silane coupling agent such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, or 3-amino group Propyltriethoxysilane, 3-aminopropyltrimethoxysilane, N-2(aminoethyl)3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyl Amine functional silane coupling agent such as trimethoxysilane, or mercapto functional silane coupling agent such as 3-mercaptopropyltrimethoxysilane, or vinyltrimethoxysilane, vinylphenyltrimethoxysilane, etc. Vinyl-functional silane coupling agent, or 3-methacryl propyl propyl trimethoxy silane and other methacryl functional silane coupling agent, or 3-propenyl propyl propyl trimethoxy silane, etc. Acrylic functional silane coupling agent, imidazole functional silane coupling agent such as imidazole silane, or triazine functional silane coupling agent such as triazine silane. The organic anticorrosive layer more preferably contains a triazole compound. Preferred examples of the triazole compound include benzotriazole (BTA) and carboxybenzotriazole (CBTA). In the case where the thermoplastic resin adhering to the roughened copper foil is a fluororesin, an organic antirust layer containing triazole compounds such as BTA and CBTA is particularly preferred. The reason why the triazole compound is preferable is listed as follows. It is considered that the triazole compound forms a copper complex with the cuprous oxide on the roughened surface. Compared with the case where it is formed on a general copper foil, the component adheres densely to the surface, so it can exert an excellent rust prevention function. Therefore, the thickness of the copper oxide and the thickness of the cuprous oxide when storing the roughened copper foil for a long period of time can be easily maintained within the above-defined range. In addition, when exposed to severe environments such as high temperatures, it is considered that the organic anti-corrosion layer containing a triazole compound maintains fine irregularities on the surface, and therefore high reliability can be maintained.

《製造方法》 本發明之粗化處理銅箔可以藉由任何方法製造,較佳係經由氧化還原處理來製造。以下說明本發明之粗化處理銅箔的較佳製造方法的一個例子。此較佳製造方法包含準備銅箔之步驟、使特定的有機物附著在該銅箔之步驟、對附著有有機物之銅箔的表面依序進行氧化處理及還原處理(氧化還原處理)之步驟。"Manufacturing method" The roughened copper foil of the present invention can be produced by any method, preferably by redox treatment. An example of a preferred method of manufacturing the roughened copper foil of the present invention will be described below. This preferred manufacturing method includes a step of preparing a copper foil, a step of attaching a specific organic substance to the copper foil, and a step of sequentially performing oxidation treatment and reduction treatment (redox treatment) on the surface of the copper foil to which the organic substance is attached.

(1)銅箔之準備 粗化處理銅箔之製造所使用的銅箔可以使用電解銅箔及壓延銅箔兩者,電解銅箔較佳。又,銅箔可為無粗化之銅箔,亦可為預先進行粗化之銅箔。銅箔的厚度不特別限制,較佳為0.1~70μm,更佳為0.5~18μm。以附載體銅箔之形態準備銅箔的情況下,銅箔係可以利用無電解銅鍍法及電解銅鍍法等濕式成膜法、濺鍍及化學蒸鍍等乾式成膜法或該等之組合來形成。(1) Preparation of copper foil As the copper foil used for the production of the roughened copper foil, both electrolytic copper foil and rolled copper foil can be used, and electrolytic copper foil is preferred. In addition, the copper foil may be a copper foil without roughening, or may be a copper foil roughened in advance. The thickness of the copper foil is not particularly limited, but it is preferably 0.1 to 70 μm, and more preferably 0.5 to 18 μm. When the copper foil is prepared in the form of a copper foil with a carrier, the copper foil can use a wet film forming method such as electroless copper plating and electrolytic copper plating, a dry film forming method such as sputtering and chemical vapor deposition, or the like Combination.

進行粗化處理之銅箔的表面,基於ISO25178測定之最大高度Sz較佳為1.5μm以下,更佳為1.2μm以下,又較佳為1.0μm以下。若在上述範圍內,則本發明之粗化處理銅箔可容易地實現期望的表面輪廓。Sz的下限值不特別限制,Sz較佳為0.1μm以上,更佳為0.2μm以上,又較佳為0.3μm以上。The surface of the copper foil subjected to the roughening treatment has a maximum height Sz measured based on ISO25178 of preferably 1.5 μm or less, more preferably 1.2 μm or less, and still more preferably 1.0 μm or less. Within the above range, the roughened copper foil of the present invention can easily achieve a desired surface profile. The lower limit of Sz is not particularly limited, and Sz is preferably 0.1 μm or more, more preferably 0.2 μm or more, and still more preferably 0.3 μm or more.

(2)有機物附著處理 使特定的有機物附著在上述銅箔的表面。有機物之附著較佳係在酸洗處理中進行。例如,較佳係將銅箔浸漬於添加有特定有機物之酸洗溶液後水洗。藉此,可以使特定的有機物附著在銅箔表面,在後述之氧化還原處理步驟中,可得到具有利於與樹脂之密著性及雷射加工性之表面特性的粗化處理銅箔。添加至酸洗溶液的有機物較佳為在銅表面形成覆膜之活性有機硫化合物的磺酸或其鹽。活性有機硫化合物的磺酸或其鹽可舉例如雙-(3-磺酸基丙基)二硫化物、3-巰基-1-丙磺酸、3-(N,N-二甲基胺硫甲醯基)-硫基丙磺酸、3-[(胺基-亞胺基甲基)硫基]-1-丙磺酸、o-乙基二硫基碳酸酯-S-(3-磺酸基丙基)-酯、3-(苯并噻唑基-2-巰基)-丙基-磺酸、乙烯二硫代二丙磺酸、巰基乙酸、硫代磷酸-o-乙基-雙-(ω-磺酸基丙基)酯二鈉鹽、硫代磷酸-參-(ω-磺酸基丙基)酯三鈉鹽等。酸洗溶液之活性有機硫化合物的磺酸或其鹽(例如雙-(3-磺酸基丙基)二硫化物)的較佳濃度為25~200ppm,更佳為50~150ppm。酸洗溶液較佳為硫酸系水溶液,硫酸系水溶液的硫酸濃度不特別限制,較佳為1~20體積%。又,銅箔在硫酸系水溶液的浸漬時間不特別限制,較佳為2秒~2分鐘。(2) Organic matter attachment treatment A specific organic substance is attached to the surface of the copper foil. The adhesion of organic matter is preferably carried out in the pickling process. For example, it is preferable to immerse the copper foil in the pickling solution to which a specific organic substance is added and then wash with water. Thereby, specific organic substances can be attached to the surface of the copper foil, and in the oxidation-reduction treatment step described later, a roughened copper foil having surface characteristics favorable for adhesion to the resin and laser processability can be obtained. The organic substance added to the pickling solution is preferably a sulfonic acid or its salt of an active organic sulfur compound that forms a coating on the copper surface. Examples of the sulfonic acid or salt of the active organic sulfur compound include bis-(3-sulfopropyl) disulfide, 3-mercapto-1-propanesulfonic acid, and 3-(N,N-dimethylaminosulfide Methyl)-thiopropanesulfonic acid, 3-[(amino-iminomethyl)thio]-1-propanesulfonic acid, o-ethyldithiocarbonate-S-(3-sulfonate Acid propyl)-ester, 3-(benzothiazolyl-2-mercapto)-propyl-sulfonic acid, ethylenedithiodipropylsulfonic acid, thioglycolic acid, phosphorothioate-o-ethyl-bis- (ω-sulfopropyl) disodium salt, thiophosphoric acid-ginseng-(ω-sulfopropyl) trisodium salt, etc. The preferred concentration of the sulfonic acid or its salt (for example, bis-(3-sulfopropyl) disulfide) of the active organic sulfur compound of the pickling solution is 25-200 ppm, more preferably 50-150 ppm. The pickling solution is preferably a sulfuric acid-based aqueous solution. The sulfuric acid concentration of the sulfuric acid-based aqueous solution is not particularly limited, but is preferably 1 to 20% by volume. In addition, the immersion time of the copper foil in the sulfuric acid-based aqueous solution is not particularly limited, but is preferably 2 seconds to 2 minutes.

(3)氧化還原處理 對於像這樣進行了上述酸洗處理之銅箔的表面,較佳施予依序進行氧化處理及還原處理之濕式粗化步驟。特別是以使用溶液之濕式法對銅箔表面施予氧化處理,藉此在銅箔表面形成含有氧化銅(氧化銅(II))之銅化合物。之後,將該銅化合物作還原處理,使一部分或全部的氧化銅轉換為氧化亞銅(氧化銅(I)),藉此,可以在銅箔表面形成由包含氧化亞銅及氧化銅(若有存在的情況)之銅複合化合物組成的針狀結晶及/或板狀結晶所構成的微細凹凸。在此,微細凹凸係在以濕式法對銅箔表面作氧化處理的階段,藉由以氧化銅為主成分之銅化合物來形成。並且,將該銅化合物作還原處理時,大略維持藉由此銅化合物形成的微細凹凸的形狀,一部分或全部的氧化銅轉換為氧化亞銅,成為包含氧化亞銅及氧化銅(若有存在的情況)之銅複合化合物組成的微細凹凸。如此地以濕式法對銅箔表面施予適當的氧化處理後,施予還原處理,藉此可以形成微細凹凸。(3) Redox treatment The surface of the copper foil subjected to the above-mentioned pickling treatment as described above is preferably subjected to a wet roughening step in which oxidation treatment and reduction treatment are sequentially performed. In particular, a copper compound containing copper oxide (copper (II) oxide) is formed on the surface of the copper foil by oxidizing the surface of the copper foil by a wet method using a solution. Afterwards, the copper compound is subjected to reduction treatment to convert part or all of the copper oxide to cuprous oxide (copper oxide (I)), whereby the surface of the copper foil can be formed of copper oxide and copper oxide (if any Existing conditions) Fine concavo-convex composed of needle-like crystals and/or plate-like crystals composed of a copper composite compound. Here, the fine irregularities are formed by a copper compound containing copper oxide as the main component during the oxidation treatment of the copper foil surface by the wet method. In addition, when the copper compound is subjected to reduction treatment, the shape of the fine irregularities formed by the copper compound is roughly maintained, and some or all of the copper oxide is converted into cuprous oxide, including cuprous oxide and copper oxide (if any exist). Case) Fine irregularities composed of a copper composite compound. In this way, after appropriate oxidation treatment is applied to the copper foil surface by a wet method, reduction treatment is performed, whereby fine irregularities can be formed.

(3a)氧化處理 對施予了上述酸洗處理之銅箔,使用氫氧化鈉溶液等鹼性溶液進行氧化處理。鹼性溶液(氧化處理液)具有將銅箔微細腐蝕之功能,以及將因腐蝕溶出之銅離子再析出之功能。因此,藉由以鹼性溶液處理銅箔表面,可以在銅箔表面形成以氧化銅為主成分之銅複合化合物組成的針狀結晶及/或板狀結晶所構成的微細凹凸。此時,被認為係藉由如上所述地預先使特定的有機物附著在銅箔上,使鹼性溶液對銅箔之腐蝕及再析出的密度變低,腐蝕及再析出集中於一部分。結果可以得到一般氧化處理所難以製作的具有利於與樹脂之密著性及雷射加工性之表面特性的粗化處理銅箔。鹼性溶液的溫度較佳為60~85℃,鹼性溶液的pH值較佳為10~14。又,由氧化之觀點而言,鹼性溶液較佳包含氯酸鹽、亞氯酸鹽、次氯酸鹽、過氯酸鹽,其濃度較佳為100~500g/L。氧化處理較佳係藉由將電解銅箔浸漬於鹼性溶液來進行,其浸漬時間(即氧化時間)較佳為10秒~20分鐘,更佳為30秒~10分鐘。(3a) Oxidation treatment The copper foil subjected to the above-mentioned pickling treatment is subjected to oxidation treatment using an alkaline solution such as sodium hydroxide solution. The alkaline solution (oxidation treatment solution) has the function of finely corroding copper foil, and the function of re-precipitating copper ions eluted by corrosion. Therefore, by treating the surface of the copper foil with an alkaline solution, fine irregularities composed of needle-like crystals and/or plate-like crystals composed of a copper composite compound containing copper oxide as a main component can be formed on the surface of the copper foil. At this time, it is considered that by attaching specific organic substances to the copper foil in advance as described above, the density of corrosion and reprecipitation of the copper foil by the alkaline solution is lowered, and the corrosion and reprecipitation are concentrated in part. As a result, a roughened copper foil having surface characteristics favorable for adhesion to resin and laser processability, which is difficult to be produced by general oxidation treatment, can be obtained. The temperature of the alkaline solution is preferably 60 to 85°C, and the pH of the alkaline solution is preferably 10 to 14. From the viewpoint of oxidation, the alkaline solution preferably contains chlorate, chlorite, hypochlorite, and perchlorate, and the concentration thereof is preferably 100 to 500 g/L. The oxidation treatment is preferably performed by immersing the electrolytic copper foil in an alkaline solution, and the immersion time (ie, oxidation time) is preferably 10 seconds to 20 minutes, more preferably 30 seconds to 10 minutes.

用於氧化處理之鹼性溶液較佳為另包含氧化抑制劑。換言之,以鹼性溶液對銅箔表面施予氧化處理之情況下,會有上述微細凹凸的凸部過度成長,超過期望之長度的情形,難以形成期望的微細凹凸。在此,為了形成上述微細凹凸,較佳係使用包含氧化抑制劑之鹼性溶液,該氧化抑制劑可以抑制銅箔表面的氧化。較佳的氧化抑制劑可舉例如胺系矽烷耦合劑。藉由使用包含胺系矽烷耦合劑之鹼性溶液對銅箔表面施予氧化處理,該鹼性溶液中的胺系矽烷耦合劑吸附於銅箔表面,可以抑制鹼性溶液對銅箔表面的氧化。結果可以抑制氧化銅的針狀結晶及/或板狀結晶之成長,可以形成具備期望之微細凹凸的較佳粗化處理面。胺系矽烷耦合劑的具體例子可舉出N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、3-三乙氧基矽基-N-(1,3-二甲基-亞丁基)丙基胺、N-苯基-3-胺基丙基三甲氧基矽烷等,特佳為N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷。上述任一種均溶於鹼性溶液,在鹼性溶液中維持穩定,同時發揮抑制上述銅箔表面氧化之效果。鹼性溶液中胺系矽烷耦合劑(例如N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷)的較佳濃度為0.01~20g/L,更佳為0.02~20g/L。The alkaline solution used for the oxidation treatment preferably further contains an oxidation inhibitor. In other words, when an oxidation treatment is applied to the copper foil surface with an alkaline solution, the convex portions of the fine irregularities may grow excessively and exceed a desired length, making it difficult to form the desired fine irregularities. Here, in order to form the above-mentioned fine irregularities, it is preferable to use an alkaline solution containing an oxidation inhibitor, which can suppress the oxidation of the copper foil surface. Examples of preferred oxidation inhibitors include amine-based silane coupling agents. By using an alkaline solution containing an amine-based silane coupling agent to oxidize the copper foil surface, the amine-based silane coupling agent in the alkaline solution is adsorbed on the surface of the copper foil, which can suppress the oxidation of the copper foil surface by the alkaline solution . As a result, the growth of the needle-shaped crystals and/or plate-shaped crystals of copper oxide can be suppressed, and a preferable roughened surface having desired fine irregularities can be formed. Specific examples of the amine-based silane coupling agent include N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-amine 3-propyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl -Butylene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, etc., particularly preferably N-2-(aminoethyl)-3-aminopropyltrimethoxysilane. Any of the above are soluble in alkaline solution, maintain stability in the alkaline solution, and exert the effect of inhibiting the oxidation of the copper foil surface. The preferred concentration of the amine-based silane coupling agent (such as N-2-(aminoethyl)-3-aminopropyltrimethoxysilane) in the alkaline solution is 0.01-20 g/L, more preferably 0.02-20 g /L.

(3b)還原處理 對於被施予上述氧化處理之銅箔(下稱氧化處理銅箔),使用還原處理液進行還原處理。藉由還原處理,使一部分或全部的氧化銅轉換為氧化亞銅(氧化銅(I)),藉此,可以在銅箔表面形成由包含氧化亞銅及氧化銅(若有存在的情況)之銅複合化合物組成的針狀結晶及/或板狀結晶所構成的微細凹凸。此還原處理係可以使氧化處理銅箔接觸還原處理液來進行,較佳係將氧化處理銅箔浸漬於還原處理液中之手法,或將還原處理液淋在氧化處理銅箔之手法,處理時間較佳為2~60秒,更佳為5~30秒。此外,還原處理液較佳為二甲基胺硼烷水溶液,此水溶液較佳含有濃度為10~40g/L之二甲基胺硼烷。又,二甲基胺硼烷水溶液較佳係使用碳酸鈉及氫氧化鈉調整為pH 12~14。此時水溶液的溫度不特別限制,為室溫即可。如此地進行了還原處理之銅箔較佳係水洗並乾燥。(3b) Reduction treatment The copper foil subjected to the above-mentioned oxidation treatment (hereinafter referred to as oxidation-treated copper foil) is subjected to reduction treatment using a reduction treatment solution. By reduction treatment, a part or all of the copper oxide is converted to cuprous oxide (copper oxide (I)), whereby the surface of the copper foil can be composed of cuprous oxide and copper oxide (if any) Fine irregularities composed of needle-like crystals and/or plate-like crystals composed of copper composite compounds. This reduction treatment can be carried out by contacting the oxidation treatment copper foil with the reduction treatment solution, preferably by dipping the oxidation treatment copper foil in the reduction treatment solution, or dipping the reduction treatment solution in the oxidation treatment copper foil, treatment time It is preferably 2 to 60 seconds, and more preferably 5 to 30 seconds. In addition, the reduction treatment solution is preferably an aqueous solution of dimethylamine borane, and the aqueous solution preferably contains dimethylamine borane at a concentration of 10 to 40 g/L. In addition, the dimethylamine borane aqueous solution is preferably adjusted to pH 12 to 14 using sodium carbonate and sodium hydroxide. At this time, the temperature of the aqueous solution is not particularly limited, and it may be room temperature. The copper foil thus reduced is preferably washed with water and dried.

(4)防鏽處理 可以依照期望,以有機防鏽劑對銅箔施予防鏽處理,形成有機防鏽層。藉此,可以維持在粗化處理銅箔的粗化處理面,以SERA換算厚度來測定之氧化亞銅及氧化銅的各自含量分別控制在規定範圍內,在此維持之狀態下容易將絕緣樹脂基材貼合於粗化處理面。又,亦可提升耐濕性、耐藥品性及與接著劑之密著性等。有機防鏽層不特別限制,較佳係包含三唑化合物及矽烷耦合劑的至少一種。三唑化合物可舉例如苯并三唑、羧基苯并三唑、甲基苯并三唑、胺基三唑、硝基苯并三唑、羥基苯并三唑、氯苯并三唑、乙基苯并三唑及萘并三唑,特佳為苯并三唑。矽烷耦合劑例如有3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基甲基二甲氧基矽烷等環氧官能基性矽烷耦合劑、或3-胺基丙基三乙氧基矽烷、3-胺基丙基三甲氧基矽烷、N-2(胺基乙基)3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等胺基官能基性矽烷耦合劑、或3-巰基丙基三甲氧基矽烷等巰基官能基性矽烷耦合劑、或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等乙烯基官能基性矽烷耦合劑、或3-甲基丙烯醯氧基丙基三甲氧基矽烷等甲基丙烯基官能基性矽烷耦合劑、或3-丙烯醯氧基丙基三甲氧基矽烷等丙烯基官能基性矽烷耦合劑、或咪唑矽烷等咪唑官能基性矽烷耦合劑、或三嗪矽烷等三嗪官能基性矽烷耦合劑等。有機防鏽層可以藉由將三唑化合物或矽烷耦合劑等有機防鏽劑適當地稀釋後塗佈並乾燥來形成。(4) Anti-rust treatment The copper foil may be subjected to an anti-rust treatment with an organic anti-rust agent as desired to form an organic anti-rust layer. In this way, the roughened surface of the roughened copper foil can be maintained, and the respective contents of cuprous oxide and copper oxide measured by SERA conversion thickness can be controlled within the prescribed ranges, and the insulating resin can be easily maintained in this maintained state The substrate is attached to the roughened surface. In addition, moisture resistance, chemical resistance, adhesion to adhesives, etc. can also be improved. The organic anti-rust layer is not particularly limited, and preferably contains at least one of a triazole compound and a silane coupling agent. Examples of triazole compounds include benzotriazole, carboxybenzotriazole, methylbenzotriazole, aminotriazole, nitrobenzotriazole, hydroxybenzotriazole, chlorobenzotriazole, ethyl Benzotriazole and naphthotriazole, especially benzotriazole. The silane coupling agent is, for example, epoxy functional silane coupling agent such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, or 3-amino group Propyltriethoxysilane, 3-aminopropyltrimethoxysilane, N-2(aminoethyl)3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyl Amine functional silane coupling agent such as trimethoxysilane, or mercapto functional silane coupling agent such as 3-mercaptopropyltrimethoxysilane, or vinyltrimethoxysilane, vinylphenyltrimethoxysilane, etc. Vinyl-functional silane coupling agent, or 3-methacryl propyl propyl trimethoxy silane and other methacryl functional silane coupling agent, or 3-propenyl propyl propyl trimethoxy silane, etc. Acrylic functional silane coupling agent, imidazole functional silane coupling agent such as imidazole silane, or triazine functional silane coupling agent such as triazine silane. The organic anti-rust layer can be formed by appropriately diluting an organic anti-rust agent such as a triazole compound or a silane coupling agent, and then coating and drying.

《貼銅層合板》 本發明的粗化處理銅箔較佳用於貼銅層合板的製作。換言之,根據本發明的較佳態樣,提供上述粗化處理銅箔及貼銅層合板,該貼銅層合板具備設於此粗化處理銅箔之粗化處理面的絕緣樹脂基材。粗化處理銅箔可設置於絕緣樹脂基材的單面,亦可設置於兩面。絕緣樹脂基材較佳為預浸體及/或樹脂片。預浸體係在合成樹脂板、玻璃板、玻璃纖維織布、玻璃纖維不織布、紙等基材含浸合成樹脂之複合材料的總稱。另一方面,樹脂片可以是切割後的片材,亦可以是輥拉出的長型片材,其形態不特別限制。又,由提升絕緣性的觀點而言,絕緣樹脂基材可含有二氧化矽、氧化鋁等各種無機粒子組成的填充粒子等。絕緣樹脂基材的厚度不特別限制,較佳為1~1000μm,更佳為2~400μm,又較佳為3~200μm。絕緣樹脂基材亦可由數個層構成。"Copper Laminated Board" The roughened copper foil of the present invention is preferably used for the production of copper-laminated laminates. In other words, according to a preferred aspect of the present invention, the roughened copper foil and the copper-clad laminate are provided, and the copper-clad laminate has an insulating resin substrate provided on the roughened surface of the roughened copper foil. The roughened copper foil can be installed on one side of the insulating resin substrate or on both sides. The insulating resin substrate is preferably a prepreg and/or resin sheet. The general name of the composite material impregnated with synthetic resin on the base materials such as synthetic resin board, glass board, glass fiber woven fabric, glass fiber non-woven fabric, paper, etc. On the other hand, the resin sheet may be a cut sheet or a long sheet drawn by a roller, and its form is not particularly limited. In addition, from the viewpoint of improving insulation, the insulating resin substrate may contain filler particles composed of various inorganic particles such as silica and alumina. The thickness of the insulating resin substrate is not particularly limited, but it is preferably 1 to 1000 μm, more preferably 2 to 400 μm, and still more preferably 3 to 200 μm. The insulating resin substrate may also be composed of several layers.

就提供適用於高頻用途之貼銅層合板的觀點而言,絕緣樹脂基材較佳包含熱塑性樹脂,更佳係包含於絕緣樹脂基材之樹脂成分的大部分(例如50重量%以上)或幾乎全部(例如80重量%以上或90重量%以上)為熱塑性樹脂。熱塑性樹脂較佳可舉例如聚碸(PSF)、聚醚碸(PES)、非晶形聚芳酯(PAR)、液晶聚合物(LCP)、聚醚醚酮(PEEK)、熱塑性聚醯亞胺(PI)、聚醯胺醯亞胺(PAI)、氟樹脂、聚醯胺(PA)、耐綸、聚甲醛(POM)、改質聚苯醚(m-PPE)、聚對苯二甲酸乙二酯(PET)、玻璃纖維強化聚對苯二甲酸乙二酯(GF-PET)、環狀烯烴(COP)及該等的任意組合。由期望的損耗因數及優異耐熱性的觀點而言,熱塑性樹脂的更佳例子可舉出聚碸(PSF)、聚醚碸(PES)、非晶形聚芳酯(PAR)、液晶聚合物(LCP)、聚醚醚酮(PEEK)、熱塑性聚醯亞胺(PI)、聚醯胺醯亞胺(PAI)、氟樹脂及該等的任意組合。由低介電係數的觀點而言,特佳的熱塑性樹脂為氟樹脂。氟樹脂較佳可舉例如聚四氟乙烯(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)、四氟乙烯-六氟丙烯共聚物(FEP)、四氟乙烯-乙烯共聚物(ETFE)及該等的任意組合。另外,絕緣樹脂基材對粗化處理銅箔的貼合,較佳係一邊加熱一邊加壓來進行,藉此可以使熱塑性樹脂軟化並嵌入粗化處理面的微細凹凸。其結果可以藉由微細凹凸(特別是針狀結晶及/或板狀結晶)咬入樹脂產生之錨定效應,確保銅箔與樹脂之密著性。From the viewpoint of providing a copper-clad laminate suitable for high-frequency applications, the insulating resin base material preferably contains a thermoplastic resin, and more preferably the resin component contained in the insulating resin base material is mostly (for example, 50% by weight or more) or Almost all (for example, 80% by weight or more or 90% by weight or more) are thermoplastic resins. The thermoplastic resin is preferably exemplified by polysulfonate (PSF), polyether sulfonate (PES), amorphous polyarylate (PAR), liquid crystal polymer (LCP), polyetheretherketone (PEEK), thermoplastic polyimide ( PI), polyamidoamide imide (PAI), fluororesin, polyamide (PA), nylon, polyoxymethylene (POM), modified polyphenylene ether (m-PPE), polyethylene terephthalate Ester (PET), glass fiber reinforced polyethylene terephthalate (GF-PET), cyclic olefin (COP) and any combination of these. From the viewpoint of the expected loss factor and excellent heat resistance, better examples of thermoplastic resins include polysulfonate (PSF), polyether sulfonate (PES), amorphous polyarylate (PAR), and liquid crystal polymer (LCP) ), polyetheretherketone (PEEK), thermoplastic polyimide (PI), polyamidoimide (PAI), fluororesin and any combination of these. From the viewpoint of low dielectric constant, the particularly preferred thermoplastic resin is a fluororesin. The fluororesin preferably includes, for example, polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (FEP), and tetrafluoroethylene-ethylene copolymerization. (ETFE) and any combination of these. In addition, the bonding of the insulating resin base material to the roughened copper foil is preferably performed while applying pressure while heating, whereby the thermoplastic resin can be softened and embedded in the fine irregularities of the roughened surface. As a result, it is possible to ensure the adhesion between the copper foil and the resin by anchoring the fine irregularities (especially needle crystals and/or plate crystals) into the resin.

《印刷佈線板》 本發明的粗化處理銅箔較佳用於印刷佈線板的製作。換言之,根據本發明的較佳態樣,提供具備上述粗化處理銅箔之印刷佈線板。印刷佈線板的具體例子可舉出在本發明的貼銅層合板形成電路的單面或雙面印刷佈線板、或將其多層化之多層印刷佈線板。多層印刷佈線板可以係在內層基板經由熱塑性樹脂層貼合銅箔之多層貼銅層合板形成電路者,亦可以係進一步形成增層(build-up)者。又,電路形成方法可以係減成法或改良型半加成(MSAP)法。本發明之具備粗化處理銅箔的印刷佈線板,可適用於訊號頻率10GHz以上之高頻區所用的汽車用天線、手機基地台天線、高性能伺服器、防撞雷達等用途所使用的高頻基板。特別是本發明的印刷佈線板藉由具備上述粗化處理銅箔,銅箔與熱塑性樹脂之耐熱剝離強度優異,因此,極適合車載用毫米波感測器等用於高溫條件下之機器所使用的高頻基板。"Printed Wiring Board" The roughened copper foil of the present invention is preferably used for the production of printed wiring boards. In other words, according to a preferred aspect of the present invention, a printed wiring board provided with the roughened copper foil described above is provided. Specific examples of the printed wiring board include a single-sided or double-sided printed wiring board forming a circuit on the copper-clad laminate of the present invention, or a multilayer printed wiring board in which the circuit is multilayered. The multilayer printed wiring board may be a multilayer copper-clad laminated board in which an inner layer substrate is laminated with a copper foil via a thermoplastic resin layer, or a build-up may be further formed. In addition, the circuit formation method may be a subtractive method or a modified semi-additive (MSAP) method. The printed wiring board with roughened copper foil of the present invention can be applied to high-frequency antennas used in automotive antennas, mobile phone base station antennas, high-performance servers, anti-collision radars, etc. used in high-frequency regions with signal frequencies above 10 GHz. Frequency substrate. In particular, the printed wiring board of the present invention is provided with the above-mentioned roughened copper foil, and the copper foil and the thermoplastic resin have excellent heat-resistant peel strength. Therefore, they are extremely suitable for use in high-temperature machines such as automotive millimeter wave sensors. High frequency substrate.

實施例:用下述例子更具體地說明本發明。Examples: The following examples illustrate the present invention more specifically.

《實施例1~4》 (1)粗化處理銅箔之製作 (1a)電解銅箔之製作 使用包含以下所示組成之硫酸酸性硫酸銅溶液作為銅電解液,陰極使用鈦製旋轉電極,陽極使用DSA(尺寸穩定性陽極),以溶液溫度45℃,電流密度55A/dm2 電解,得到厚度18μm之電解銅箔。此電解銅箔的析出面及電極面的最大高度Sz係依據ISO25178使用雷射顯微鏡(KEYENCE股份有限公司製VK-X100)測定,析出面之Sz為0.8μm,電極面之Sz為1.2μm。 硫酸酸性硫酸銅溶液之組成: 銅濃度:80 g/L 硫酸濃度:260 g/L 雙(3-磺酸基丙基)二硫化物濃度:30 mg/L 二烯丙基二甲基氯化銨聚合物濃度:50 mg/L 氯濃度:40 mg/L"Examples 1 to 4" (1) Preparation of roughened copper foil (1a) Preparation of electrolytic copper foil A sulfuric acid copper sulfate solution containing the composition shown below was used as a copper electrolyte, a titanium rotating electrode was used for the cathode, and an anode Using DSA (Dimensionally Stable Anode), electrolysis was performed at a solution temperature of 45°C and a current density of 55 A/dm 2 to obtain an electrolytic copper foil with a thickness of 18 μm. The maximum height Sz of the precipitation surface of the electrolytic copper foil and the electrode surface is measured according to ISO25178 using a laser microscope (VK-X100 manufactured by KEYENCE Co., Ltd.). The Sz of the precipitation surface is 0.8 μm, and the Sz of the electrode surface is 1.2 μm. Composition of sulfuric acid copper sulfate solution: Copper concentration: 80 g/L Sulfuric acid concentration: 260 g/L Bis(3-sulfopropyl) disulfide concentration: 30 mg/L diallyl dimethyl chloride Ammonium polymer concentration: 50 mg/L Chlorine concentration: 40 mg/L

(1b)有機物附著處理 將上述得到之電解銅箔浸漬於液溫40℃、雙(3-磺酸基丙基)二硫化物濃度為100ppm、硫酸濃度為10體積%之含有機物硫酸水溶液中23秒(例1及例2)或5分鐘(例3及例4)後水洗。(1b) Organic matter attachment treatment The electrolytic copper foil obtained above was immersed in an organic-containing sulfuric acid aqueous solution having a liquid temperature of 40° C., a bis(3-sulfopropyl) disulfide concentration of 100 ppm, and a sulfuric acid concentration of 10% by volume for 23 seconds (Example 1 and Example 2) After 5 minutes (Example 3 and Example 4), wash with water.

(1c)粗化處理(氧化還原處理) 對施予了上述酸洗處理之電解銅箔的兩面進行以下所示之粗化處理(氧化還原處理)。換言之,依序進行以下所示之氧化處理及還原處理。(1c) Roughening treatment (redox treatment) Both sides of the electrolytic copper foil subjected to the above-mentioned pickling treatment were subjected to roughening treatment (redox treatment) as shown below. In other words, the oxidation treatment and reduction treatment shown below are performed in order.

氧化處理: 對施予了上述酸洗處理之電解銅箔進行氧化處理。此氧化處理係將該電解銅箔浸漬於液溫75℃、pH=12、亞氯酸濃度為100~500g/L、N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷濃度為10 g/L之氫氧化鈉溶液3分鐘(例1及例3)或10分鐘(例2及例4)來進行。像這樣,在電解銅箔的兩面形成由銅複合化合物組成的針狀結晶及/或板狀結晶所構成的微細凹凸。Oxidation treatment: The electrolytic copper foil subjected to the above-mentioned pickling treatment was oxidized. This oxidation treatment is to immerse the electrolytic copper foil in a liquid temperature of 75°C, pH=12, chlorite concentration of 100~500g/L, N-2-(aminoethyl)-3-aminopropyltrimethoxy Sodium hydroxide solution with a concentration of 10 g/L of sodium silane was used for 3 minutes (Example 1 and Example 3) or 10 minutes (Example 2 and Example 4). In this way, fine irregularities composed of needle-like crystals and/or plate-like crystals composed of a copper composite compound are formed on both sides of the electrolytic copper foil.

還原處理: 對施予了上述氧化處理之試料進行還原處理。此還原處理係將藉由上述氧化處理形成有微細凹凸之試料,浸漬於使用碳酸鈉及氫氧化鈉調整為pH=13且二甲基胺硼烷濃度為10~40g/L之水溶液1分鐘來進行。此時水溶液的溫度為室溫。將如此進行了還原處理之試料水洗後乾燥。藉由上述步驟,將電解銅箔兩面之氧化銅的一部分還原成氧化亞銅,形成粗化處理面,其具有由包含氧化銅及氧化亞銅之銅複合化合物組成的微細凹凸。像這樣,得到兩側具有針狀結晶及/或板狀結晶所構成之粗化處理面的粗化處理銅箔。Restore processing: The sample subjected to the above-mentioned oxidation treatment is subjected to reduction treatment. This reduction treatment is to immerse a sample formed with fine irregularities by the above oxidation treatment into an aqueous solution adjusted to pH=13 using sodium carbonate and sodium hydroxide and having a dimethylamine borane concentration of 10 to 40 g/L for 1 minute. get on. At this time, the temperature of the aqueous solution is room temperature. The sample thus subjected to reduction treatment was washed with water and dried. Through the above steps, part of the copper oxide on both sides of the electrolytic copper foil is reduced to cuprous oxide to form a roughened surface, which has fine irregularities composed of a copper composite compound containing copper oxide and cuprous oxide. In this way, a roughened copper foil having a roughened surface composed of needle crystals and/or plate crystals on both sides is obtained.

(1d)有機防鏽層之形成 對上述得到的粗化處理銅箔進行有機防鏽層之形成。此有機防鏽層之形成係將粗化處理銅箔在液溫25℃浸漬於含有濃度為6g/L之苯并三唑作為有機防鏽劑的水溶液30秒後,暴露於180℃之熱風10秒使其乾燥來進行。(1d) Formation of organic antirust layer The roughened copper foil obtained above was subjected to the formation of an organic antirust layer. This organic anti-rust layer is formed by immersing the roughened copper foil in an aqueous solution containing benzotriazole with a concentration of 6 g/L as an organic anti-rust agent at a liquid temperature of 25° C. for 30 seconds, and then exposed to hot air at 180° C. 10 Let it dry in seconds.

(2)粗化處理銅箔之評價 對所製作之粗化處理銅箔作下述之各種評價。(2) Evaluation of roughened copper foil The following various evaluations were performed on the roughened copper foil produced.

SERA測定: 藉由連續電化學還原法(SERA)測定粗化處理銅箔的粗化處理面的氧化銅(CuO)厚度及氧化亞銅(Cu2 O)厚度。此SERA分析使用ECI Technology公司製QC-100作為測定裝置。步驟如下。首先,將粗化處理銅箔8.0mm2 之區域以O環墊片隔離以用於分析,注入硼酸緩衝溶液,用氮使其飽和。對上述區域施加30μA/cm2 之電流密度Id ,測量在-0.40V~-0.60V出現之Cu2 O還原反應及在-0.60V~-0.85V出現之CuO還原反應所需的時間,分別作為t1 及t2 (秒)。CuO及Cu2 O各自的厚度T(nm)係使用由法拉第定律求出的常數K,根據T=K‧Id ‧t之式子算出。又,與CuO有關之常數K的值為6.53×10-5 (cm3 /A‧sec),與Cu2 O有關之常數K的值為2.45×10-4 (cm3 /A‧sec)。上述常數K基於K=M/(z‧F‧ρ)(式中M為分子量,z為電荷數,F為法拉第常數,ρ為密度)之式子算出。SERA measurement: The thickness of copper oxide (CuO) and the thickness of cuprous oxide (Cu 2 O) of the roughened surface of the roughened copper foil were measured by the continuous electrochemical reduction method (SERA). For this SERA analysis, QC-100 manufactured by ECI Technology was used as the measuring device. Proceed as follows. First, the 8.0 mm 2 area of the roughened copper foil was isolated with an O-ring gasket for analysis, and boric acid buffer solution was injected and saturated with nitrogen. Apply a current density I d of 30 μA/cm 2 to the above area, and measure the time required for the Cu 2 O reduction reaction occurring at -0.40V to -0.60V and the CuO reduction reaction occurring at -0.60V to -0.85V, respectively As t 1 and t 2 (seconds). The thickness T (nm) of each of CuO and Cu 2 O is calculated using the constant K obtained by Faraday's law, according to the equation of T=K‧I d ‧t. In addition, the value of the constant K related to CuO is 6.53×10 -5 (cm 3 /A‧sec), and the value of the constant K related to Cu 2 O is 2.45×10 -4 (cm 3 /A‧sec). The above constant K is calculated based on the formula K=M/(z‧F‧ρ) (where M is the molecular weight, z is the number of charges, F is the Faraday constant, and ρ is the density).

亦即,與CuO有關之常數K(=6.53×10-5 (cm3 /A‧sec))係在K=M/(z‧F‧ρ)之式子中輸入下述數值來算出。 M(分子量)=79.545(g/mol) z(電荷數)=2(CuO+H2 O+2e-→Cu+2OH-) F(法拉第常數)=96494(C/mol)=96500(A・sec/mol) Ρ(密度)=6.31(g/cm3That is, the constant K (=6.53×10 -5 (cm 3 /A‧sec)) related to CuO is calculated by entering the following value in the formula of K=M/(z‧F‧ρ). M (molecular weight) = 79.545 (g/mol) z (charge number) = 2 (CuO+H 2 O+2e-→Cu+2OH-) F (Faraday constant) = 96494 (C/mol) = 96500 (A・ sec/mol) Ρ (density) = 6.31 (g/cm 3 )

又,與Cu2 O有關之常數K(=2.45×10-4 (cm3 /A‧sec))係在K=M/(z‧F‧ρ)之式子中輸入下述數值來算出。 M(分子量)=143.09(g/mol) z(電荷數)=1(Cu2 O+H2 O+2e-→2Cu+2OH-) F(法拉第常數)=96494(C/mol)=96500(A・sec/mol) Ρ(密度)=6.04(g/cm3In addition, the constant K (=2.45×10 -4 (cm 3 /A‧sec)) related to Cu 2 O is calculated by entering the following value in the formula of K=M/(z‧F‧ρ). M (molecular weight) = 143.09 (g/mol) z (charge number) = 1 (Cu 2 O+H 2 O+2e-→ 2Cu+2OH-) F (Faraday constant) = 96494 (C/mol) = 96500 ( A・sec/mol) Ρ(density)=6.04(g/cm 3 )

粗化處理面(微細凹凸)之觀察: 以SEM觀察構成粗化處理銅箔之粗化處理面的微細凹凸(析出面側)的表面及截面,例1~4的任一個均可確認到粗化處理面係由無數個看似板狀的針狀結晶構成的微細凹凸所形成。Observation of roughened surface (fine irregularities): Observe the surface and cross section of the fine irregularities (precipitation surface side) constituting the roughened surface of the roughened copper foil by SEM. Any one of Examples 1 to 4 can be confirmed that the roughened surface consists of countless plate-like surfaces The needle-like crystals are formed by fine irregularities.

對熱塑性樹脂(PTFE)之常態剝離強度: 準備PTFE基材(RO3003 Bondply,ROGERS Corporation製,厚度125μm)作為熱塑性樹脂基材。將上述SERA測定剛完成的粗化處理銅箔(厚度18μm)積層在此PTFE基材以使粗化處理銅箔的粗化處理面與該基材抵接,使用真空壓力機,以壓力2.4MPa、溫度370℃、加壓時間30分鐘的條件加壓製作貼銅層合板。接著,藉由蝕刻法對此貼銅層合板製作具備寬度0.4mm之剝離強度測定用直線電路的測試基板。依據JIS C 5016-1994的A方法(90度剝離)將如此形成之直線電路從PTFE基材剝開,測定常態剝離強度(kgf/cm)。此測定係使用桌上材料測試機(STA-1150,ORIENTEC股份有限公司製)來進行。結果如表1所示。Normal peel strength of thermoplastic resin (PTFE): A PTFE substrate (RO3003 Bondply, manufactured by ROGERS Corporation, thickness 125 μm) was prepared as a thermoplastic resin substrate. The roughened copper foil (thickness 18 μm) just finished by the above SERA measurement was laminated on this PTFE substrate so that the roughened surface of the roughened copper foil was in contact with the substrate, using a vacuum press at a pressure of 2.4 MPa At a temperature of 370°C and a pressing time of 30 minutes, a copper-clad laminate was produced under pressure. Next, a test circuit having a linear circuit for measuring the peel strength of 0.4 mm in width was produced on the copper-clad laminate by an etching method. According to the method A (90 degree peeling) of JIS C 5016-1994, the linear circuit thus formed was peeled from the PTFE substrate, and the normal peel strength (kgf/cm) was measured. This measurement is performed using a table material testing machine (STA-1150, manufactured by ORIENTEC Co., Ltd.). The results are shown in Table 1.

對熱塑性樹脂(PTFE)之耐熱剝離強度: 除了將具備寬度0.4mm之剝離強度測定用直線電路的測試基板放入烘箱,以150℃或171℃加熱10日以外,藉由與上述對熱塑性樹脂(PTFE)之常態剝離強度相同的步驟,測定對PTFE之耐熱剝離強度(kgf/cm)。結果如表1所示。此外,以UL規格求出之耐熱剝離強度的期望值,在上述任一條件下均為0.36kgf/cm以上。Heat-resistant peel strength of thermoplastic resin (PTFE): Except that a test substrate with a linear circuit for measuring the peel strength of 0.4 mm is placed in an oven and heated at 150° C. or 171° C. for 10 days, the same procedure as described above for the normal peel strength of a thermoplastic resin (PTFE) is used to measure Heat-resistant peel strength of PTFE (kgf/cm). The results are shown in Table 1. In addition, the expected value of the heat-resistant peel strength determined by the UL standard is 0.36 kgf/cm or more under any of the above conditions.

雷射加工性: 使用上述(1)所得到的粗化處理銅箔,如下述地製作雷射加工性評價用積層體。首先,準備PTFE基材(RO3003 Bondply,ROGERS Corporation製,厚度125μm)作為熱塑性樹脂基材。接著,將上述(1)所得到的粗化處理銅箔積層在此PTFE基材的兩面以使粗化處理銅箔的粗化處理面與該基材抵接,使用真空壓力機,以壓力2.4MPa、溫度370℃、加壓時間30分鐘的條件加壓,得到雷射加工性評價用積層體。又,上述(1)所得到的粗化處理銅箔的兩面有施予同樣的粗化處理,故在粗化處理銅箔與PTFE基材之密著面及與該密著面相反之面存在同樣的粗化處理面。對於得到的雷射加工性評價用積層體,使用二氧化碳雷射,以光罩口徑2.0mm、脈衝寬度14μsec、脈衝能量19.3mJ、偏移0.8、雷射光徑153μm、目標口徑70μm的條件由一側的粗化處理銅箔施予雷射加工,對各例分別形成100個貫孔,該貫孔係貫通該粗化處理銅箔及熱塑性樹脂且到達另一側的粗化處理銅箔。測量所形成之貫孔的加工徑,算出在目標口徑附近(70μm±5μm)之貫孔徑的比例,用以下的基準作分級評價。結果如表1所示。 評價A:70μm±5μm之貫孔徑的比例為80%以上。 評價B:70μm±5μm之貫孔徑的比例為60%以上且未滿80%。 評價C:70μm±5μm之貫孔徑的比例未滿60%。Laser processability: Using the roughened copper foil obtained in the above (1), a laminate for evaluation of laser processability was produced as follows. First, a PTFE base material (RO3003 Bondply, manufactured by ROGERS Corporation, thickness 125 μm) was prepared as a thermoplastic resin base material. Next, the roughened copper foil obtained in (1) above was laminated on both sides of the PTFE substrate so that the roughened surface of the roughened copper foil was in contact with the substrate, using a vacuum press at a pressure of 2.4 Pressure was applied under the conditions of MPa, temperature 370°C, and pressing time for 30 minutes to obtain a laminate for evaluation of laser processability. In addition, since the roughened copper foil obtained in the above (1) is subjected to the same roughening treatment on both sides, there is an adhesion surface between the roughened copper foil and the PTFE substrate and a surface opposite to the adhesion surface The same roughened surface. For the obtained laminate for evaluation of laser processability, carbon dioxide laser was used, and the conditions were as follows: photomask diameter 2.0 mm, pulse width 14 μsec, pulse energy 19.3 mJ, offset 0.8, laser light diameter 153 μm, target aperture 70 μm The roughened copper foil was subjected to laser processing, and 100 through-holes were formed in each case. The through-holes penetrated the roughened copper foil and the thermoplastic resin and reached the other side of the roughened copper foil. The processed diameter of the formed through-hole was measured, the ratio of the through-hole diameter near the target aperture (70 μm±5 μm) was calculated, and the following criteria were used for classification evaluation. The results are shown in Table 1. Evaluation A: The ratio of the through hole diameter of 70 μm±5 μm is 80% or more. Evaluation B: The ratio of the 70 μm±5 μm through pore diameter is 60% or more and less than 80%. Evaluation C: The ratio of the through hole diameter of 70 μm±5 μm was less than 60%.

例5(比較): 將電解銅箔進行浸漬於液溫40℃、硫酸濃度為10體積%之硫酸水溶液23秒後水洗這樣的不添加有機物之酸洗處理,以取代上述(1b)的有機物附著處理,除此之外與例1同樣地製作粗化處理銅箔及進行評價。結果如表1所示。Example 5 (comparison): The electrolytic copper foil is immersed in a sulfuric acid aqueous solution having a liquid temperature of 40° C. and a sulfuric acid concentration of 10% by volume for 23 seconds, and then washed with water without acid pickling treatment to replace the organic matter adhesion treatment of (1b) above. The roughened copper foil was prepared and evaluated in the same manner as in Example 1. The results are shown in Table 1.

例6(比較): 將電解銅箔進行浸漬於液溫40℃、硫酸濃度為10體積%之硫酸水溶液23秒後水洗這樣的不添加有機物之酸洗處理(不添加有機物),以取代上述(1b)的有機物附著處理,除此之外與例2同樣地製作粗化處理銅箔及進行評價。結果如表1所示。Example 6 (comparison): The electrolytic copper foil is immersed in a sulfuric acid aqueous solution with a liquid temperature of 40° C. and a sulfuric acid concentration of 10% by volume for 23 seconds, and then washed with an acid pickling treatment (no organic matter is added) such as water washing to replace the organic matter adhesion treatment of (1b) Otherwise, the roughened copper foil was prepared and evaluated in the same manner as in Example 2. The results are shown in Table 1.

例7(比較): 將電解銅箔進行浸漬於液溫40℃、硫酸濃度為10體積%之硫酸水溶液23秒後水洗這樣的不添加有機物之酸洗處理,以取代上述(1b)的有機物附著處理,以及經由以下步驟形成無機防鏽層以取代上述(1d)的有機防鏽層,除此之外與例1同樣地製作粗化處理銅箔及進行評價。結果如表1所示。Example 7 (comparison): The electrolytic copper foil was immersed in a sulfuric acid aqueous solution having a liquid temperature of 40° C. and a sulfuric acid concentration of 10% by volume for 23 seconds, followed by washing with water without acid addition treatment to replace the organic matter adhesion treatment of (1b) above, and through the following steps An inorganic rust prevention layer was formed instead of the organic rust prevention layer (1d), except that the roughened copper foil was prepared and evaluated in the same manner as in Example 1. The results are shown in Table 1.

無機防鏽層之形成: 對粗化處理銅箔進行由無機防鏽處理及鉻酸鹽處理所組成的防鏽處理。首先,作為無機防鏽處理,係使用焦磷酸,以焦磷酸鉀濃度80g/L、鋅濃度0.2g/L、鎳濃度2g/L、液溫40℃、電流密度0.5A/dm2 進行鋅-鎳合金防鏽處理。接著,作為鉻酸鹽處理,在鋅-鎳合金防鏽處理上,進一步形成鉻酸鹽層。此鉻酸鹽處理係以鉻酸濃度1g/L、pH=11、溶液溫度25℃、電流密度1A/dm2 進行。像這樣在粗化處理銅箔的兩面形成無機防鏽層。Formation of inorganic antirust layer: The roughened copper foil is subjected to antirust treatment consisting of inorganic antirust treatment and chromate treatment. First, as an inorganic anti-rust treatment, pyrophosphoric acid was used, and zinc pyrophosphate concentration was 80g/L, zinc concentration 0.2g/L, nickel concentration 2g/L, liquid temperature 40°C, current density 0.5A/dm 2- Nickel alloy anti-rust treatment. Next, as a chromate treatment, a chromate layer is further formed on the zinc-nickel alloy anti-rust treatment. This chromate treatment is carried out with a chromic acid concentration of 1 g/L, a pH=111, a solution temperature of 25° C., and a current density of 1 A/dm 2 . In this way, an inorganic antirust layer is formed on both surfaces of the roughened copper foil.

表1(*表示比較例)

Figure 108118108-A0304-0001
Table 1 (* indicates a comparative example)
Figure 108118108-A0304-0001

no

Claims (10)

一種粗化處理銅箔,在至少一側具有粗化處理面,該粗化處理面係以包含氧化亞銅及/或氧化銅之針狀結晶及/或板狀結晶所構成,該粗化處理面以連續電化學還原法測定之氧化亞銅厚度為71~300nm,且以連續電化學還原法測定之氧化銅厚度為0~20nm。A roughened copper foil having a roughened surface on at least one side, the roughened surface is composed of needle-like crystals and/or plate-like crystals including cuprous oxide and/or copper oxide, the roughening process The thickness of the cuprous oxide measured by the continuous electrochemical reduction method is 71 to 300 nm, and the thickness of the copper oxide measured by the continuous electrochemical reduction method is 0 to 20 nm. 如申請專利範圍第1項所述之粗化處理銅箔,其中,該粗化處理面之氧化亞銅厚度為100~300nm。The roughened copper foil as described in item 1 of the patent application range, wherein the thickness of the cuprous oxide on the roughened surface is 100 to 300 nm. 如申請專利範圍第1或2項所述之粗化處理銅箔,其中,該粗化處理面之氧化銅厚度為1~20nm。The roughened copper foil as described in item 1 or 2 of the patent application range, wherein the copper oxide thickness of the roughened surface is 1-20 nm. 如申請專利範圍第1至3項中任一項所述之粗化處理銅箔,其中,該粗化處理銅箔的兩側具有粗化處理面。The roughened copper foil according to any one of items 1 to 3 of the patent application range, wherein the roughened copper foil has roughened surfaces on both sides. 如申請專利範圍第1至4項中任一項所述之粗化處理銅箔,其中,該粗化處理面具有有機防鏽層。The roughened copper foil according to any one of items 1 to 4 of the patent application range, wherein the roughened surface has an organic anti-rust layer. 如申請專利範圍第5項所述之粗化處理銅箔,其中,該有機防鏽層包含三唑化合物及矽烷耦合劑中的至少一種。The roughened copper foil as described in item 5 of the patent application range, wherein the organic anti-rust layer contains at least one of a triazole compound and a silane coupling agent. 如申請專利範圍第5項所述之粗化處理銅箔,其中,該有機防鏽層包含三唑化合物。The roughened copper foil as described in item 5 of the patent application range, wherein the organic antirust layer contains a triazole compound. 一種貼銅層合板,具備如申請專利範圍第1至7項中任一項所述之粗化處理銅箔及設置於該粗化處理銅箔的該至少一側之絕緣樹脂基材。A copper-clad laminated board comprising the roughened copper foil as described in any one of claims 1 to 7 and an insulating resin substrate provided on the at least one side of the roughened copper foil. 如申請專利範圍第8項所述之貼銅層合板,其中,該絕緣樹脂基材包含熱可塑性樹脂。The copper-clad laminate as described in item 8 of the patent application range, wherein the insulating resin base material contains a thermoplastic resin. 一種印刷佈線板,具備如申請專利範圍第1至7項中任一項所述之粗化處理銅箔。A printed wiring board provided with the roughened copper foil as described in any one of items 1 to 7 of the patent application.
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