TWD203027S - 基座 - Google Patents

基座 Download PDF

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Publication number
TWD203027S
TWD203027S TW108301945F TW108301945F TWD203027S TW D203027 S TWD203027 S TW D203027S TW 108301945 F TW108301945 F TW 108301945F TW 108301945 F TW108301945 F TW 108301945F TW D203027 S TWD203027 S TW D203027S
Authority
TW
Taiwan
Prior art keywords
wafer
design
case
wafers
contact
Prior art date
Application number
TW108301945F
Other languages
English (en)
Inventor
池尻貴宏
Original Assignee
日商東洋炭素股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東洋炭素股份有限公司 filed Critical 日商東洋炭素股份有限公司
Publication of TWD203027S publication Critical patent/TWD203027S/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

【物品用途】;本物品是一種用於半導體製造的基座，其具有多個分別放置晶圓(wafer)的口袋部。各口袋部的內壁上形成多個可以放置並保持晶圓的晶圓保持部。各口袋部的內壁具有(i)與晶圓側面面接觸的晶圓接觸部和(ii)通過形成直徑大於晶圓接觸部的直徑而不與晶圓側面接觸的晶圓非接觸部。;【設計說明】;圖式所揭露之虛線部分，為本案不主張設計之部分。圖式中一點鏈線界定本案主張設計之部分的邊界，該一點鏈線本身為本案不主張設計之部分。H-I部分放大圖可清楚表現出本案主張設計之部分。

Description

基座
本物品是一種用於半導體製造的基座，其具有多個分別放置晶圓(wafer)的口袋部。各口袋部的內壁上形成多個可以放置並保持晶圓的晶圓保持部。各口袋部的內壁具有(i)與晶圓側面面接觸的晶圓接觸部和(ii)通過形成直徑大於晶圓接觸部的直徑而不與晶圓側面接觸的晶圓非接觸部。
圖式所揭露之虛線部分，為本案不主張設計之部分。圖式中一點鏈線界定本案主張設計之部分的邊界，該一點鏈線本身為本案不主張設計之部分。H-I部分放大圖可清楚表現出本案主張設計之部分。
TW108301945F 2018-10-04 2019-04-03 基座 TWD203027S (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-021799 2018-02-09
JPD2018-21799F JP1648519S (zh) 2018-10-04 2018-10-04

Publications (1)

Publication Number Publication Date
TWD203027S true TWD203027S (zh) 2020-03-01

Family

ID=68916791

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108301945F TWD203027S (zh) 2018-10-04 2019-04-03 基座

Country Status (3)

Country Link
US (1) USD935425S1 (zh)
JP (1) JP1648519S (zh)
TW (1) TWD203027S (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD212795S (zh) 2020-09-24 2021-07-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理設備用電極
TWD221386S (zh) 2021-05-11 2022-10-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理設備用氣體流量控制板

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD975665S1 (en) * 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD965044S1 (en) * 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122844B2 (en) * 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US8366830B2 (en) * 2003-03-04 2013-02-05 Cree, Inc. Susceptor apparatus for inverted type MOCVD reactor
US9612215B2 (en) * 2004-07-22 2017-04-04 Toyo Tanso Co., Ltd. Susceptor
EP2338164A4 (en) 2008-08-29 2012-05-16 Veeco Instr Inc VARIABLE THERMAL RESISTANCE PLATE HOLDER
US8801857B2 (en) * 2008-10-31 2014-08-12 Asm America, Inc. Self-centering susceptor ring assembly
JP1438320S (zh) * 2011-09-20 2015-04-06
JP1438319S (zh) * 2011-09-20 2015-04-06
USD819580S1 (en) * 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
USD810705S1 (en) * 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWD212795S (zh) 2020-09-24 2021-07-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理設備用電極
TWD221386S (zh) 2021-05-11 2022-10-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理設備用氣體流量控制板

Also Published As

Publication number Publication date
USD935425S1 (en) 2021-11-09
JP1648519S (zh) 2019-12-23

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