TWD171962S - 仿真晶圓之部分（三） - Google Patents

仿真晶圓之部分（三）

Info

Publication number
TWD171962S
TWD171962S TW104302466F TW104302466F TWD171962S TW D171962 S TWD171962 S TW D171962S TW 104302466 F TW104302466 F TW 104302466F TW 104302466 F TW104302466 F TW 104302466F TW D171962 S TWD171962 S TW D171962S
Authority
TW
Taiwan
Prior art keywords
design
view
film forming
parts
forming device
Prior art date
Application number
TW104302466F
Other languages
English (en)
Inventor
Yutaka Motoyama
Kohei Fukushima
Original Assignee
東京威力科創股份有限公司
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司, Tokyo Electron Ltd filed Critical 東京威力科創股份有限公司
Publication of TWD171962S publication Critical patent/TWD171962S/zh

Links

Abstract

【物品用途】;本設計之物品係一種在半導體製造之成膜過程中，為了壓低成膜裝置內之製品晶圓的成膜量差異而適合吸附成膜裝置內之上下部分氣體所使用者。具體而言，如顯示使用狀態之參考圖所示，本設計之物品係以將積層於成膜裝置內之複數製品晶圓加以夾持的方式積層於上下部來使用。欲取得部分設計專利的部分具有放大仿真晶圓表面積、增加仿真晶圓氣體吸附量的用途與機能。;【設計說明】;本設計係主張以實線所表示之部分作為部分設計，包含A-B部分放大俯視圖以及C-C剖面圖係對於欲取得部分設計專利之部分加以特定。一點鏈線僅為顯示欲取得部分設計專利之部分與其他部分之交界的線。右側視圖因與前視圖相同故予以省略。後視圖、左側視圖以及仰視圖由於未顯示欲取得部分設計專利之部分故予以省略。此外，圖式中以虛線表示之部分，為本設計所不主張之部分。又，本設計不主張色彩。
TW104302466F 2014-11-13 2015-05-11 仿真晶圓之部分（三） TWD171962S (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2014-25308F JP1534138S (zh) 2014-11-13 2014-11-13

Publications (1)

Publication Number Publication Date
TWD171962S true TWD171962S (zh) 2015-11-21

Family

ID=54206980

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104302466F TWD171962S (zh) 2014-11-13 2015-05-11 仿真晶圓之部分（三）

Country Status (3)

Country Link
US (1) USD785576S1 (zh)
JP (1) JP1534138S (zh)
TW (1) TWD171962S (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD897974S1 (en) 2018-03-29 2020-10-06 Hamamatsu Photonics K.K. Semiconductor wafer
TWD230097S (zh) 2022-01-27 2024-02-21 晶成半導體股份有限公司 晶圓

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD897974S1 (en) 2018-03-29 2020-10-06 Hamamatsu Photonics K.K. Semiconductor wafer
TWD230097S (zh) 2022-01-27 2024-02-21 晶成半導體股份有限公司 晶圓
TWD230098S (zh) 2022-01-27 2024-02-21 晶成半導體股份有限公司 晶圓
TWD231013S (zh) 2022-01-27 2024-05-01 晶成半導體股份有限公司 晶圓

Also Published As

Publication number Publication date
USD785576S1 (en) 2017-05-02
JP1534138S (zh) 2015-09-28

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