TW591803B - Transistor circuit - Google Patents
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- TW591803B TW591803B TW092103619A TW92103619A TW591803B TW 591803 B TW591803 B TW 591803B TW 092103619 A TW092103619 A TW 092103619A TW 92103619 A TW92103619 A TW 92103619A TW 591803 B TW591803 B TW 591803B
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- 239000003990 capacitor Substances 0.000 claims description 38
- 238000003860 storage Methods 0.000 claims description 8
- 230000014759 maintenance of location Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000007689 inspection Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101100489577 Solanum lycopersicum TFT10 gene Proteins 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Description
591803 五、發明說明(l) [發明所屬之才 本發明係 尤指,一種可 [先前技術] 以往,在 給或取出而利 例如,作 该有機EL顯示 置並構成多數 主動矩陣方式 電晶體,以控 第5圖係| 中的晝素電路 配置而構成。 在朝列方 選擇之η通道^ 1 T F Τ 1 〇之汲極 極上連接有保 為低電壓電源 容CS的連接點 閘極。而且, 極係連接在有 連接在陰極電 因此,閘 [術領域] 有關 一' tn 冰* 土 5用以驅動各種元件之電晶體電路, 使具動你α 乍檢查谷易進行的電晶體電路。 顯示裝契 及感測器等中’為了控制電流之供 用電晶體。 面顯示面板,有一種有機EL顯示面板, Ρ糸將有機EL元件作成畫素,並將該元件配 串 iJjn 一 卞狀。又,該有機EL元件之驅動方法中有 息素中没置開關用之電晶體,控制盆 制各畫素之顯示。 1不利用習知薄膜電晶體(TFT)之有機EL面板 之構成例。有機EL面板係將上述晝素作矩陣 -向.延伸的閘極線上,連接有作為由閘極線所 1膜電晶體的第1TFT10之閘極。在該第 ’連接有朝行方向延伸的資料線DL,在其源 持電容CS,而該保持電容cs係連接在另一端 的電容線SL。又,第1TFTi〇之源極與保持電 ▲係連接在p通道薄膜電晶體之第2TFT4〇的 違苐2TFT4 0之源極係連接在電源線vl,其汲 機EL元件EL。又,有機EL元件EL之另一端係 源CV〇 極線GL在Η位準時第1TFT10會導通,此時的
314433.ptd
第4頁 591803 五、發明說明(2) ,料線DL的資料會保持在保持電容cs。然後,依據保持在 違保持電容cs的資料(電位)控制第2TFT40之電流,並依據 该第2TFT40之電流使電流流到有機EL元件EL而令其發光。 此外’當第1TFT1 0導通時,對資料線d L供給對應於該 畫素之視頻信號。因此,對應於資料線DL所供給之視頻信 號對保持電容CS進行充電’藉此第2TFT40將流通所對應之 電流,以進行有機E L元件E L之亮度控制。亦即,^制第 2 T F T 4 0之閘極電位,並控制流通於有機e L元件之電流,以 進行各畫素之色階顯示。 在該種有機EL面板之製造過程中,在形成於各書素中 之2個TFT等中會產生缺陷,而產生無法進行預定顯示的書 素。上述缺陷係以預定之機率產生,欲完全防止上述點^ 陷之產生有其困難。而且,由於很難以視覺辨識未顯示該 缺陷的暗點,因此藉由以雷射切斷配線等手法,將^陷^ 素予以暗點化。 、、旦 因此,必須進行各畫素之動作檢查。該檢查係在真空 中照射電子線等,並利用光檢測器等檢測出各畫素所反二 之2次電子,雖有確認動作的方法,但該方法費%寺而無效 I 〇 ”、、 另一方面,在LCD之形成好晝素電極的階段,將開關 元件予以導通,並對補助電容及晝素電極施加電壓、,^此 進行充電於補助電容之電荷量的陣列測試,並開^一 ^用 以進行上述測試的陣列測試器。 x 然而’有機EL面板之1晝素係具有2個TFT,在LCD之陣
314433.ptd 第5頁 591803 五、發明說明(3) 列測試中,雖可進行第1 TFT之輸出測試,但無法進行第 2TFT之測試,亦即對有機EL元件是否進行電流供給(進行 發光)的測試。 本發明係鑑於上述課題而研創者,其目的在提供一種 可使用陣列測試器進行各畫素之動作測試的有機EL面板。 [發明内容] 本發明係具備有:一端連接在信號線,且在閘極接收 選擇信號而動作之第1電晶體;閘極連接有該第1電晶體之 另一端,以控制電流消耗或電流產生元件之相關電流的第 2電晶體,在上述第2電晶體之閘極與源極或汲極之間所產 生的電晶體電容為5 f F以上。 如此,藉由增大第2電晶體之電容,可讀出充電在此 之電荷,並進行電晶體之動作確認。 又,最好在上述第1電晶體之另一端與第2電晶體之閘 極,連接有電荷保持用之保持電容。 再者,本發明係具備有:一端連接在信號線,且在閘 極接收選擇信號而動作之第1電晶體;閘極連接有該第1電 晶體之另一端,以控制電流消耗或電流產生元件之相關電 流的第2電晶體;連接在上述第1電晶體之另一端及第2電 晶體之閘極的電荷保持用之保持電容’在上述第2電晶體 之閘極與源極或〉及極之間所產生的電晶體電容大小為上述 保持電容之電容的5 %以上。 如此,藉由將第2電晶體之電容設定為保持電容之某 種程度以上,可讀出充電在此之電荷,並進行電晶體之動
314433.ptd 第6頁 591803 五、發明說明(4) 作確認。 再者,本發明係具備有:一端連接在信號線,且在閘 極接收選擇信號而動作之第1電晶體;閘極連接有該第1電 晶體之另一端,以控制電流消耗或電流產生元件之相關電 流的第2電晶體,上述第2電晶體具備有··用以增大於其閘 極與源極或汲極之間所產生的電晶體電容的電容增加機 構。 如此’精由增大第2電晶體(驅動電晶體)之電容,可 讀出充電在此之電荷,並進行電晶體之動作確認。 又,上述電容增加機構最好將上述第2電晶體之通道 區域的一部分予以平面地擴展,並維持通道寬度、通道長 度,同時擴大通道區域,以增大電晶體電容。 再者,上述第1電晶體之另一端及第2電晶體的閘極, 最好連接到電荷保持用的保持電容。 又,連接有上述第1電晶體之一端的信號線,係供給 顯示資料的資料線,上述第2電晶體最好將與保持於保持 電容之電壓相對應的電流從電源線供給至有機E L元件。 [實施方式] 以下,根據圖式說明本發明之實施形態。 第1圖係顯示有機EL顯示面板中之1畫素的電晶體電路 構成。與第5圖同樣地,各晝素具備有第1TFT10、保持電 容CS、第2TFT40、以及有機EL元件EL。而且,第2TFT4 0必 然具有電容,亦即第2TFT40之閘極·源極間具有電晶體電 容 Cdtr 〇
314433.ptd 第7頁 591803 五、發明說明(5) ^--一^^ 接+ 形態中,藉由導通第nFT10,將其充電於保 ί ^ 毛晶體電容Cdh,並檢測出電晶體電容cdtr之 電谷值’以檢查第1TFT10及第2TFT40是否正常。 亦即’藉由將資料線DL設定為預定之電壓,將第 1 TFT 1 0導通,然後讀出從資料線DL充電的電荷量,可檢測 出第1TFT10是否正常。
在此,該電荷量係包含充電於電晶體電容Cdtr者。因 此’藉由比較讀出電荷量可檢測出電晶體C d t r是否按照預 設值。亦即,將第1TFT1 〇導通,且將資料線DL之電壓設疋 為VT時,若將電容線sl之電位差設定為V11,將與電源線 VL之電位差設定為Vt踌,則以Qt = CS· Vtl+Cdtr· Vt A電 荷進行充電。因此,透過資料線DL檢測出該電荷量,可測 出電晶體電容Cdtr。 此係TFT之閘極與源極或汲極發生短路,或無法正常 形成源極、通道、汲極等區域時,因V t或C d t r產生變化, 而使電晶體之電荷量產生變化之故。在本實施形態中,藉 由檢測出該電晶體電容C d t rx V12^電荷量,可判定第 2 T F T 4 0是否正常,亦即判定是否可正常進行顯示。
再者,該電晶體電容Cdtr之檢測係可透過資料線DL讀 出充電電荷量,亦可透過電源線VL讀出充電電荷量。亦 即,由於電源線VL係連接在電晶體電容Cdtr之另一端,故 由此可檢測出充電於電晶體電容Cdtr之電荷量。 在此’在上述的檢測中,當保持電谷C S有茶差不齊的 情形時,則無法檢測出電晶體電容Cdtr之變化。通常保持
314433.ptd 第8頁 591803 五、發明說明(6) — 一'' -- 電容CS為l〇〇fF左右,雷日达a 私日日體Cdtr為數f F左右,欲檢測出 電晶體電容Cdtr的保持電荷量有所困難。 因此’在本貫施形態中,係較通常增加第2TFT4〇之電 晶體電容。此為藉由以下手法而進行者。 (1)可藉由增大第2TFT40之通道面積而達成。亦即,電晶 體電容Cdtr可以下式表示。 [數學式1 ]
Cdtr = K · Sdtr/ds Sdtr=n· Wdtr· LdTr 在此’ K為預定之常數’ Sdtr為通道面積,ds為閘極 氧化膜之膜厚’ η為第2TFT之並聯連接的個數,Mtr為通 道寬度,LdTr為通道長度。 因此’猎由增大整個通道面積,可增大電晶體電容 Cdtr。 (2 )再者’措由減小閘極氧化膜之膜厚d s,亦可增大電晶 體電容Cdtr。 藉由上述手法,最好將電晶體電容C d t r設定在5 f F以 上,設定在1 0 i F以上則更為理想。又,藉由將保持電容CS 與C d t r之比C d t r / C S設定在5 %以上(1 〇 %更佳),可確實地檢 測出電晶體電容Cdtr。 又,亦可採取一種積極增加電晶體電容Cdtr之手段。 第2圖顯示一例之構成,並顯示由多晶矽等所構成之 主動層40a,更具體而言係變更通道區域之形狀,且增大 其面積。亦即’在電源線V L連接在主動層之_端,另一端
314433.ptd 第9頁 591803 五、發明說明(7) 則連接在陽極5 0。在此,T F T係具有:閘極電極配置在比 主動層4 0 a更上方之頂閘極構造,閘極電極4 0 c在其間挟持 有閘極絕緣膜,且覆蓋主動層4 0 a之中央部分。該中央部 分為通道區域’其兩側為源極區域’及〉及極區域。 此外,如第2圖所示,通道區域之一部分係以擴展面 積之方式突出形成於閘極電極4 0 c之下側。如此,藉由增 大閘極電極40c下方之通道區域,即可在不變更第2 TFT40 之能力下增大該電晶體電容Cdtr。 第3圖顯示其他例,在該例中顯示閘極電極4 0 c之一部 分、非主動層40a上方之部分,亦即在從第2TFT40偏移之 部分中,使閘極電極4 0 c延伸至電源線V L之下方。藉此, 電源線VL與閘極線40c隔著層間絕緣膜相向,且在此形成 電容。 第4圖顯示又一其他例,在該例中,與主動層同時另 行設置與主動層4 0 a同樣地由例如多晶矽所形成之半導體 層,將該半導體層之一端與電源線VL相接觸,利用的是將 主動層4 0 a與電源線VL予以連接的相同構造,而該半導體 層之另一端則延伸至閘極電極4 0 c之下方。藉此,隔著氧 化膜(閘極氧化膜)可使另一端連接在電源線VL之半導體層 位於閘極電極4 0 c之下方。半導體層在閘極電極4 0 c之下側 雖未接受雜質之摻雜,但藉由半導體層隔著閘極氧化膜與 閘極電極4 0 c相向之構成,可在此形成電容。 如上所述,藉由第2圖至第4圖之構成,可積極地增加 第2TFT40之電晶體電容Cdtr·。因此,藉由具有該種第
314433.ptd 第10頁 591803 五、發明說明(8) 2TFT4 0之畫素的電路構成,利用檢測所增加之電晶體電容 Cdtr,可檢查該晝素之動作。 特別是,該種檢查可在層積有機EL元件EL之有機層之 前進行。亦即,在形成陽極5 0之階段下可進行該項檢查。 而且,對於所發現之不良畫素(特別是亮度缺陷晝素),可 藉由雷射將配線切斷。 有機EL元件之場合,係在形成陽極5 〇後,形成第2平 坦化膜6 0。因此’可藉由該第2平坦化膜6 〇,利用雷射, 填埋所產生之孔,並且可排除因製品之雷射修整所造成之 孔殘留的弊害。 在此,第6圖顯示第2TFT4〇與有機叽元件阢之剖面構 造。如圖不,第2TFT40係形成在玻璃基板3〇上,且該第 2TFT4 0具有由低溫多晶矽所形成之主動層4〇&。該主動屛 40a之兩端係形成摻雜有雜質之源極區域、汲極區域,^ 挾在上述兩,域,中央部係形成通道區域。在該通道區 之上部,隔著由氧化石夕所槿成 或 閘極電極40c。閘極絕緣膜4n甲°、=、· ' 4〇b而形成有 絕緣膜34之接觸孔而連;二兩 極4〇d、沒極電極40e。而且,源極電極4〇d /的原極\電 之上端係位於層間絕緣膜34之表面。 及極冤柽4〇 又,在層間絕緣膜3 4之表而μ ,脱罢士 電極40e與電源線VL的金屬配t - 用以連接及桠
314433.ptd
_ 第11頁 mx 591803 五、發明說明(9) 此外,在第1平坦化膜36之上面,形成有由IT〇所構成 之透明電極5 0 ’其一端係藉由第1平坦化膜3 6之接觸孔連 接在驅動TFT40之源極電極40d。 再者,該透明電極5 0係構成有機EL元件之陽極,在該 透明電極50上,藉由電洞輸送層52、有機發光層54、電子 輸送層5 6而形成金屬製之陰極58。又,在透明電極5〇之周 邊及側方配置有苐2平坦化膜6 0。 如此,主動層40a係配置在玻璃基板3〇之正上方,在 主動層4 0 a上隔著閘極絕緣膜4 0 b而形成有閘極電極4 〇 c。 又,電源線VL係隔著層間絕緣膜34而形成在閘極電極4〇c 上層。因此,如上所述,藉由採用變更主動層40a、閘極 電極4 0 c及電源線V L之形狀,或設置與主動層同層之半導 體層等電容增加機構,可增大第2TFT40之電容。 又,在上述之例中,第2TFT40雖係採用p通道TFT,但 亦可採用η通這TFT,此時,連接有機EL元件上側與保持電 容CS下側’並且設置用來將其連接在低電壓電源的放電用 TFT,當電容CS進行資料改寫時使該tft導通即可。有關該 構成係記載在日本特願2 0 0 1 - 3 0 3 7 6 8號。 又’在上述例中’雖顯示有機E L面板之構成,但亦可 採用螢光顯示管及感測器等來取代有機EL元件。採用感測 器時,係從電源線VL讀出電流。 再者,在上述電路中,在第2TFT40之閘極雖只連接有 保持電容c S ’但亦可連接有重設電路,記憶體電路等各種 電路(或元件)。在該情況下的元件可為主動元件,亦可為
314433.ptd 第12頁 591803
314433.ptd 第13頁 591803 圖式簡單說明 [圖式簡單說明] 第1圖係顯示實施形態之電路的示意圖。 第2圖係顯示用以使第2TFT之電容上昇之構成例的示 意圖。 第3圖係顯示用以使第2TFT之電容上昇之構成例的示 意圖。 第4圖係顯示用以使第2TFT之電容上昇之構成例的示 意圖。 第5圖係顯示晝素電路之構成的示意圖。 第6圖係顯示畫素部之剖面的示意圖。 10 第 1TFT 34 層間絕緣膜 36 第1平坦化膜 40 第 2TFT 40a 主動層 40b 閘極絕緣膜 4 0c 閘極電極 40d 源極電極 4 0 e 汲極電極 50 陽極(透明電極) 52 電洞輸送層 54 有機發光層 56 電子輸送層 60 第2平坦化膜 CS 保持電容 Cd t ] 「驅動電晶體電 DL 資料線 GL 閘極線 VL 電源線
314433.ptd 第14頁
Claims (1)
- 591803 六、申請專利範圍 1. 一種電晶體電路,其特徵為具備有:一端連接在信號 線,且在閘極接收選擇信號而動作之第1電晶體;以及 閘極連接有該第1電晶體之另一端,以控制電流消 耗或電流產生元件之相關電流的苐2電晶體,同時’ 在上述第2電晶體之閘極與源極或汲極之間所產生 的電晶體電容為5 f F以上。 2. 如申請專利範圍第1項之電晶體電路,其中,在上述第 1電晶體之另一端與第2電晶體之閘極,連接有電荷保 持用之保持電容。 3. —種電晶體電路,其特徵為具備有:一端連接在信號 線,且在閘極接收選擇信號而動作之第1電晶體; 閘極連接有該第1電晶體之另一端,以控制電流消 耗或電流產生元件之相關電流的第2電晶體,以及 連接在上述第1電晶體之另一端及第2電晶體之閘 極的電荷保持用之保持電容;同時, 在上述第2電晶體之閘極與源極或汲極之間所產生 的電晶體電容大小為上述保持電容之電容的5 %以上。 4. 一種電晶體電路,其特徵為具備有:一端連接在信號 線,且在閘極接收選擇信號而動作之第1電晶體;以及 閘極連接有該第1電晶體之另一端,以控制電流消 耗或電流產生元件之相關電流的第2電晶體,同時’ 上述第2電晶體具備有:用以增大於其閘極與源極 或〉及極之間所產生的電晶體電容的電容增加機構。 5. 如申請專利範圍第4項之電晶體電路,其中,上述電容314433.ptd 第15頁 591803 六、申請專利範圍 增加機構係將上述第2電晶體之通道區域的一部分予以 平面地擴展,並維持通道寬度、通道長度,同時擴大 通道區域,以增大電晶體電容。 6. 如申請專利範圍第4項或第5項之電晶體電路,其中, 在上述第1電晶體之另一端與第2電晶體之閘極,連接 有電射保持用之保持電容。 7. 如申請專利範圍第2、3、6項中任1項之電晶體電路, 其中,連接有上述第1電晶體之一端的信號線,係供給 顯示資料的資料線,同時, 上述第2電晶體係將與保持於保持電容之電壓相對 應的電流從電源線供給至有機EL元件。314433.ptd 第16頁
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US9772935B2 (en) | 2014-09-16 | 2017-09-26 | Empire Technology Development Llc | Data storage based on rank modulation in single-level flash memory |
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CA2898282A1 (en) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2900170A1 (en) | 2015-08-07 | 2017-02-07 | Gholamreza Chaji | Calibration of pixel based on improved reference values |
CA2908285A1 (en) | 2015-10-14 | 2017-04-14 | Ignis Innovation Inc. | Driver with multiple color pixel structure |
CN108986747B (zh) * | 2018-07-25 | 2020-07-28 | 京东方科技集团股份有限公司 | 一种阵列基板、有机电致发光显示面板及显示装置 |
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GB2206721A (en) * | 1987-07-03 | 1989-01-11 | Philips Electronic Associated | Active matrix display device |
US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
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2002
- 2002-03-15 JP JP2002072248A patent/JP4274734B2/ja not_active Expired - Lifetime
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2003
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US20040004218A1 (en) | 2004-01-08 |
JP2003273122A (ja) | 2003-09-26 |
KR100499841B1 (ko) | 2005-07-07 |
CN1278490C (zh) | 2006-10-04 |
TW200304228A (en) | 2003-09-16 |
CN1461107A (zh) | 2003-12-10 |
US6914448B2 (en) | 2005-07-05 |
JP4274734B2 (ja) | 2009-06-10 |
KR20030074451A (ko) | 2003-09-19 |
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