TW571366B - Cleaning gas for semiconductor production equipment and cleaning method using the gas - Google Patents
Cleaning gas for semiconductor production equipment and cleaning method using the gas Download PDFInfo
- Publication number
- TW571366B TW571366B TW91136000A TW91136000A TW571366B TW 571366 B TW571366 B TW 571366B TW 91136000 A TW91136000 A TW 91136000A TW 91136000 A TW91136000 A TW 91136000A TW 571366 B TW571366 B TW 571366B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- scope
- patent application
- oxygen
- cleaning
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004140 cleaning Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 109
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000001301 oxygen Substances 0.000 claims abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 33
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 26
- 239000011737 fluorine Substances 0.000 claims abstract description 26
- 238000010926 purge Methods 0.000 claims description 20
- 238000011049 filling Methods 0.000 claims description 9
- 150000002222 fluorine compounds Chemical class 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000003085 diluting agent Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 229910004014 SiF4 Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 11
- 229910052778 Plutonium Inorganic materials 0.000 description 13
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 13
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 8
- 229910052722 tritium Inorganic materials 0.000 description 8
- 229910052770 Uranium Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 5
- 150000002927 oxygen compounds Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001784 detoxification Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000001856 erectile effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001379401A JP2003178986A (ja) | 2001-12-13 | 2001-12-13 | 半導体製造装置のクリーニングガスおよびクリーニング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200301932A TW200301932A (en) | 2003-07-16 |
| TW571366B true TW571366B (en) | 2004-01-11 |
Family
ID=19186793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91136000A TW571366B (en) | 2001-12-13 | 2002-12-12 | Cleaning gas for semiconductor production equipment and cleaning method using the gas |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2003178986A (enExample) |
| CN (1) | CN1592798A (enExample) |
| TW (1) | TW571366B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4686157B2 (ja) | 2004-09-29 | 2011-05-18 | 株式会社東芝 | 成膜装置のクリーニング方法 |
| CN101466873B (zh) * | 2006-04-10 | 2012-09-26 | 苏威氟有限公司 | 蚀刻方法 |
| US20100012153A1 (en) * | 2006-07-27 | 2010-01-21 | Takamitsu Shigemoto | Method of cleaning film forming apparatus and film forming apparatus |
| US9627180B2 (en) * | 2009-10-01 | 2017-04-18 | Praxair Technology, Inc. | Method for ion source component cleaning |
| WO2011051251A1 (en) * | 2009-10-26 | 2011-05-05 | Solvay Fluor Gmbh | Etching process for producing a tft matrix |
| JP5751895B2 (ja) * | 2010-06-08 | 2015-07-22 | 株式会社日立国際電気 | 半導体装置の製造方法、クリーニング方法および基板処理装置 |
| JP6097192B2 (ja) * | 2013-04-19 | 2017-03-15 | 東京エレクトロン株式会社 | エッチング方法 |
| CN105537207B (zh) * | 2015-12-11 | 2018-09-25 | 上海交通大学 | 一种高温用石英管的清洗方法 |
| CN106637133A (zh) * | 2016-12-26 | 2017-05-10 | 苏州工业园区纳米产业技术研究院有限公司 | 一种pecvd反应腔体的清洁方法及清洁气体 |
| KR102749070B1 (ko) * | 2018-08-30 | 2024-12-31 | 미쯔비시 케미컬 주식회사 | 세정액, 세정 방법 및 반도체 웨이퍼의 제조 방법 |
-
2001
- 2001-12-13 JP JP2001379401A patent/JP2003178986A/ja active Pending
-
2002
- 2002-12-12 TW TW91136000A patent/TW571366B/zh not_active IP Right Cessation
- 2002-12-12 CN CN 02804007 patent/CN1592798A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003178986A (ja) | 2003-06-27 |
| TW200301932A (en) | 2003-07-16 |
| CN1592798A (zh) | 2005-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |