TW558843B - Production method for semiconductor wafer and III group nitride compound semiconductor device - Google Patents

Production method for semiconductor wafer and III group nitride compound semiconductor device Download PDF

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Publication number
TW558843B
TW558843B TW091106173A TW91106173A TW558843B TW 558843 B TW558843 B TW 558843B TW 091106173 A TW091106173 A TW 091106173A TW 91106173 A TW91106173 A TW 91106173A TW 558843 B TW558843 B TW 558843B
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Taiwan
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semiconductor
layer
crystal
patent application
scope
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TW091106173A
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English (en)
Chinese (zh)
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Seiji Nagai
Kazuyoshi Tomita
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Toyoda Gosei Kk
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  • Chemical Vapour Deposition (AREA)
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TW091106173A 2001-03-30 2002-03-28 Production method for semiconductor wafer and III group nitride compound semiconductor device TW558843B (en)

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JP2001099123A JP4749583B2 (ja) 2001-03-30 2001-03-30 半導体基板の製造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043977B2 (en) 2005-08-08 2011-10-25 Showa Denko K.K. Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
TWI550144B (zh) * 2014-02-20 2016-09-21 紐富來科技股份有限公司 氣相成長裝置
TWI843227B (zh) * 2021-10-14 2024-05-21 美商應用材料股份有限公司 用於ＧａＮ生長的半導體處理方法與半導體結構

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4824920B2 (ja) * 2003-10-20 2011-11-30 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶半導体デバイス
JP4904726B2 (ja) * 2005-06-16 2012-03-28 日立電線株式会社 半導体エピタキシャルウェハ及びｈｅｍｔ用半導体エピタキシャルウェハの製造方法
KR100969812B1 (ko) * 2007-12-12 2010-07-13 주식회사 실트론 자가 분리를 이용한 질화갈륨 단결정 기판의 제조 방법
WO2012020565A1 (ja) * 2010-08-11 2012-02-16 住友化学株式会社 半導体基板、半導体デバイスおよび半導体基板の製造方法
FR2977260B1 (fr) * 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
JP5228122B1 (ja) * 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
US10204778B2 (en) * 2016-12-28 2019-02-12 QROMIS, Inc. Method and system for vertical power devices
KR102227213B1 (ko) * 2019-04-19 2021-03-12 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법
KR102301861B1 (ko) * 2019-02-28 2021-09-14 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치
KR102315908B1 (ko) * 2019-03-25 2021-10-21 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치
CN113491020B (zh) * 2019-02-28 2024-08-16 波主有限公司 高纯度压电薄膜以及制造利用该薄膜的元件的方法
KR102480141B1 (ko) * 2020-09-04 2022-12-22 웨이브로드 주식회사 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자
KR20210005989A (ko) * 2021-01-08 2021-01-15 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법
KR102712440B1 (ko) * 2022-05-20 2024-10-02 웨이브로드 주식회사 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07267796A (ja) * 1994-03-31 1995-10-17 Mitsubishi Cable Ind Ltd ＧａＮ単結晶の製造方法
JP3349316B2 (ja) * 1995-12-05 2002-11-25 古河電気工業株式会社 エピタキシャル成長方法
JP3712770B2 (ja) * 1996-01-19 2005-11-02 豊田合成株式会社 ３族窒化物半導体の製造方法及び半導体素子
JP4298023B2 (ja) * 1998-10-28 2009-07-15 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 窒化物半導体多層堆積基板および窒化物半導体多層堆積基板の形成方法
JP2000277441A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 半導体構造とそれを備えた半導体素子及び結晶成長方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043977B2 (en) 2005-08-08 2011-10-25 Showa Denko K.K. Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
US8222674B2 (en) 2005-08-08 2012-07-17 Showa Denko K.K. Semiconductor device having a group-III nitride superlattice layer on a silicon substrate
TWI550144B (zh) * 2014-02-20 2016-09-21 紐富來科技股份有限公司 氣相成長裝置
TWI843227B (zh) * 2021-10-14 2024-05-21 美商應用材料股份有限公司 用於ＧａＮ生長的半導體處理方法與半導體結構
US12557436B2 (en) 2021-10-14 2026-02-17 Applied Materials, Inc. Substrate processing for GaN growth

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JP2002299253A (ja) 2002-10-11

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