JP4749583B2 - 半導体基板の製造方法 - Google Patents

半導体基板の製造方法 Download PDF

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Publication number
JP4749583B2
JP4749583B2 JP2001099123A JP2001099123A JP4749583B2 JP 4749583 B2 JP4749583 B2 JP 4749583B2 JP 2001099123 A JP2001099123 A JP 2001099123A JP 2001099123 A JP2001099123 A JP 2001099123A JP 4749583 B2 JP4749583 B2 JP 4749583B2
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JP
Japan
Prior art keywords
semiconductor
layer
crystal
semiconductor substrate
manufacturing
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Expired - Fee Related
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JP2001099123A
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English (en)
Japanese (ja)
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JP2002299253A5 (enExample
JP2002299253A (ja
Inventor
誠二 永井
一義 冨田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
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Toyoda Gosei Co Ltd
Toyota Central R&D Labs Inc
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Publication date
Application filed by Toyoda Gosei Co Ltd, Toyota Central R&D Labs Inc filed Critical Toyoda Gosei Co Ltd
Priority to JP2001099123A priority Critical patent/JP4749583B2/ja
Priority to US10/473,074 priority patent/US7011707B2/en
Priority to PCT/JP2002/003026 priority patent/WO2002082517A1/ja
Priority to EP02707196A priority patent/EP1396878A4/en
Priority to TW091106173A priority patent/TW558843B/zh
Publication of JP2002299253A publication Critical patent/JP2002299253A/ja
Publication of JP2002299253A5 publication Critical patent/JP2002299253A5/ja
Application granted granted Critical
Publication of JP4749583B2 publication Critical patent/JP4749583B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
JP2001099123A 2001-03-30 2001-03-30 半導体基板の製造方法 Expired - Fee Related JP4749583B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001099123A JP4749583B2 (ja) 2001-03-30 2001-03-30 半導体基板の製造方法
US10/473,074 US7011707B2 (en) 2001-03-30 2002-03-27 Production method for semiconductor substrate and semiconductor element
PCT/JP2002/003026 WO2002082517A1 (en) 2001-03-30 2002-03-27 Production method for semiconductor substrate and semiconductor element
EP02707196A EP1396878A4 (en) 2001-03-30 2002-03-27 METHOD OF MANUFACTURING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR ELEMENT
TW091106173A TW558843B (en) 2001-03-30 2002-03-28 Production method for semiconductor wafer and III group nitride compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001099123A JP4749583B2 (ja) 2001-03-30 2001-03-30 半導体基板の製造方法

Publications (3)

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JP2002299253A JP2002299253A (ja) 2002-10-11
JP2002299253A5 JP2002299253A5 (enExample) 2010-04-15
JP4749583B2 true JP4749583B2 (ja) 2011-08-17

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JP2001099123A Expired - Fee Related JP4749583B2 (ja) 2001-03-30 2001-03-30 半導体基板の製造方法

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JP (1) JP4749583B2 (enExample)
TW (1) TW558843B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4824920B2 (ja) * 2003-10-20 2011-11-30 パナソニック株式会社 Ｉｉｉ族元素窒化物結晶半導体デバイス
JP4904726B2 (ja) * 2005-06-16 2012-03-28 日立電線株式会社 半導体エピタキシャルウェハ及びｈｅｍｔ用半導体エピタキシャルウェハの製造方法
JP4913375B2 (ja) 2005-08-08 2012-04-11 昭和電工株式会社 半導体素子の製造方法
KR100969812B1 (ko) * 2007-12-12 2010-07-13 주식회사 실트론 자가 분리를 이용한 질화갈륨 단결정 기판의 제조 방법
WO2012020565A1 (ja) * 2010-08-11 2012-02-16 住友化学株式会社 半導体基板、半導体デバイスおよび半導体基板の製造方法
FR2977260B1 (fr) * 2011-06-30 2013-07-19 Soitec Silicon On Insulator Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
JP5228122B1 (ja) * 2012-03-08 2013-07-03 株式会社東芝 窒化物半導体素子及び窒化物半導体ウェーハ
JP2015156418A (ja) * 2014-02-20 2015-08-27 株式会社ニューフレアテクノロジー 気相成長方法
US10204778B2 (en) * 2016-12-28 2019-02-12 QROMIS, Inc. Method and system for vertical power devices
KR102227213B1 (ko) * 2019-04-19 2021-03-12 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법
KR102301861B1 (ko) * 2019-02-28 2021-09-14 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치
KR102315908B1 (ko) * 2019-03-25 2021-10-21 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치
CN113491020B (zh) * 2019-02-28 2024-08-16 波主有限公司 高纯度压电薄膜以及制造利用该薄膜的元件的方法
KR102480141B1 (ko) * 2020-09-04 2022-12-22 웨이브로드 주식회사 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자
KR20210005989A (ko) * 2021-01-08 2021-01-15 안상정 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법
US12557436B2 (en) * 2021-10-14 2026-02-17 Applied Materials, Inc. Substrate processing for GaN growth
KR102712440B1 (ko) * 2022-05-20 2024-10-02 웨이브로드 주식회사 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07267796A (ja) * 1994-03-31 1995-10-17 Mitsubishi Cable Ind Ltd ＧａＮ単結晶の製造方法
JP3349316B2 (ja) * 1995-12-05 2002-11-25 古河電気工業株式会社 エピタキシャル成長方法
JP3712770B2 (ja) * 1996-01-19 2005-11-02 豊田合成株式会社 ３族窒化物半導体の製造方法及び半導体素子
JP4298023B2 (ja) * 1998-10-28 2009-07-15 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 窒化物半導体多層堆積基板および窒化物半導体多層堆積基板の形成方法
JP2000277441A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 半導体構造とそれを備えた半導体素子及び結晶成長方法

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Publication number Publication date
TW558843B (en) 2003-10-21
JP2002299253A (ja) 2002-10-11

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