TW558843B - Production method for semiconductor wafer and III group nitride compound semiconductor device - Google Patents
Production method for semiconductor wafer and III group nitride compound semiconductor device Download PDFInfo
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- TW558843B TW558843B TW91106173A TW91106173A TW558843B TW 558843 B TW558843 B TW 558843B TW 91106173 A TW91106173 A TW 91106173A TW 91106173 A TW91106173 A TW 91106173A TW 558843 B TW558843 B TW 558843B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- -1 nitride compound Chemical class 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 59
- 230000002265 prevention Effects 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000002178 crystalline material Substances 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052596 spinel Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 238000004080 punching Methods 0.000 claims 1
- 239000002689 soil Substances 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 19
- 229910002601 GaN Inorganic materials 0.000 abstract description 14
- 230000004927 fusion Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 111
- 239000010408 film Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000002365 multiple layer Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241000219112 Cucumis Species 0.000 description 2
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 2
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001099123A JP4749583B2 (ja) | 2001-03-30 | 2001-03-30 | 半導体基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW558843B true TW558843B (en) | 2003-10-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91106173A TW558843B (en) | 2001-03-30 | 2002-03-28 | Production method for semiconductor wafer and III group nitride compound semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4749583B2 (enrdf_load_stackoverflow) |
| TW (1) | TW558843B (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8043977B2 (en) | 2005-08-08 | 2011-10-25 | Showa Denko K.K. | Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate |
| TWI550144B (zh) * | 2014-02-20 | 2016-09-21 | 紐富來科技股份有限公司 | 氣相成長裝置 |
| TWI843227B (zh) * | 2021-10-14 | 2024-05-21 | 美商應用材料股份有限公司 | 用於ＧａＮ生長的半導體處理方法與半導體結構 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4824920B2 (ja) * | 2003-10-20 | 2011-11-30 | パナソニック株式会社 | Ｉｉｉ族元素窒化物結晶半導体デバイス |
| JP4904726B2 (ja) * | 2005-06-16 | 2012-03-28 | 日立電線株式会社 | 半導体エピタキシャルウェハ及びｈｅｍｔ用半導体エピタキシャルウェハの製造方法 |
| KR100969812B1 (ko) * | 2007-12-12 | 2010-07-13 | 주식회사 실트론 | 자가 분리를 이용한 질화갈륨 단결정 기판의 제조 방법 |
| JP5746927B2 (ja) * | 2010-08-11 | 2015-07-08 | 住友化学株式会社 | 半導体基板、半導体デバイスおよび半導体基板の製造方法 |
| FR2977260B1 (fr) * | 2011-06-30 | 2013-07-19 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede |
| JP5228122B1 (ja) * | 2012-03-08 | 2013-07-03 | 株式会社東芝 | 窒化物半導体素子及び窒化物半導体ウェーハ |
| US10204778B2 (en) * | 2016-12-28 | 2019-02-12 | QROMIS, Inc. | Method and system for vertical power devices |
| KR102315908B1 (ko) * | 2019-03-25 | 2021-10-21 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치 |
| US12063023B2 (en) | 2019-02-28 | 2024-08-13 | Wavelord Co., Ltd. | Method of manufacturing a piezoelectric thin film |
| KR102227213B1 (ko) * | 2019-04-19 | 2021-03-12 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
| KR102301861B1 (ko) * | 2019-02-28 | 2021-09-14 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막을 제조하는 방법 및 이 박막을 이용하는 장치 |
| KR102480141B1 (ko) * | 2020-09-04 | 2022-12-22 | 웨이브로드 주식회사 | 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자 |
| KR20210005989A (ko) * | 2021-01-08 | 2021-01-15 | 안상정 | 고순도 AlxGa1-xN (0.5≤x≤1) 압전 박막 및 이 박막을 이용하는 소자를 제조하는 방법 |
| KR102712440B1 (ko) * | 2022-05-20 | 2024-10-02 | 웨이브로드 주식회사 | 압전 박막을 제조하는 방법 및 이 박막을 이용하는 소자 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07267796A (ja) * | 1994-03-31 | 1995-10-17 | Mitsubishi Cable Ind Ltd | ＧａＮ単結晶の製造方法 |
| JP3349316B2 (ja) * | 1995-12-05 | 2002-11-25 | 古河電気工業株式会社 | エピタキシャル成長方法 |
| JP3712770B2 (ja) * | 1996-01-19 | 2005-11-02 | 豊田合成株式会社 | ３族窒化物半導体の製造方法及び半導体素子 |
| JP4298023B2 (ja) * | 1998-10-28 | 2009-07-15 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 窒化物半導体多層堆積基板および窒化物半導体多層堆積基板の形成方法 |
| JP2000277441A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体構造とそれを備えた半導体素子及び結晶成長方法 |
-
2001
- 2001-03-30 JP JP2001099123A patent/JP4749583B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-28 TW TW91106173A patent/TW558843B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8043977B2 (en) | 2005-08-08 | 2011-10-25 | Showa Denko K.K. | Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate |
| US8222674B2 (en) | 2005-08-08 | 2012-07-17 | Showa Denko K.K. | Semiconductor device having a group-III nitride superlattice layer on a silicon substrate |
| TWI550144B (zh) * | 2014-02-20 | 2016-09-21 | 紐富來科技股份有限公司 | 氣相成長裝置 |
| TWI843227B (zh) * | 2021-10-14 | 2024-05-21 | 美商應用材料股份有限公司 | 用於ＧａＮ生長的半導體處理方法與半導體結構 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4749583B2 (ja) | 2011-08-17 |
| JP2002299253A (ja) | 2002-10-11 |
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