TW556201B - Parallel access of cross-point diode memory arrays - Google Patents
Parallel access of cross-point diode memory arrays Download PDFInfo
- Publication number
- TW556201B TW556201B TW091108563A TW91108563A TW556201B TW 556201 B TW556201 B TW 556201B TW 091108563 A TW091108563 A TW 091108563A TW 91108563 A TW91108563 A TW 91108563A TW 556201 B TW556201 B TW 556201B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- diode
- address
- memory array
- electrodes
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 366
- 238000003491 array Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 26
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- 239000010410 layer Substances 0.000 description 61
- 239000004065 semiconductor Substances 0.000 description 18
- 238000003860 storage Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 238000013500 data storage Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 5
- 230000008859 change Effects 0.000 description 5
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- 238000005381 potential energy Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
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- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011257 shell material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- 229920000642 polymer Polymers 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/875,828 US6385075B1 (en) | 2001-06-05 | 2001-06-05 | Parallel access of cross-point diode memory arrays |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW556201B true TW556201B (en) | 2003-10-01 |
Family
ID=25366422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091108563A TW556201B (en) | 2001-06-05 | 2002-04-25 | Parallel access of cross-point diode memory arrays |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6385075B1 (enExample) |
| EP (1) | EP1265253A3 (enExample) |
| JP (1) | JP3936246B2 (enExample) |
| KR (1) | KR20020092832A (enExample) |
| CN (1) | CN100401422C (enExample) |
| TW (1) | TW556201B (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5673218A (en) | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
| US6956757B2 (en) * | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
| WO2002027768A2 (en) * | 2000-09-27 | 2002-04-04 | Nüp2 Incorporated | Fabrication of semiconductor devices |
| US6567295B2 (en) * | 2001-06-05 | 2003-05-20 | Hewlett-Packard Development Company, L.P. | Addressing and sensing a cross-point diode memory array |
| US6599796B2 (en) * | 2001-06-29 | 2003-07-29 | Hewlett-Packard Development Company, L.P. | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
| US6478231B1 (en) * | 2001-06-29 | 2002-11-12 | Hewlett Packard Company | Methods for reducing the number of interconnects to the PIRM memory module |
| US6567301B2 (en) * | 2001-08-09 | 2003-05-20 | Hewlett-Packard Development Company, L.P. | One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same |
| US6813182B2 (en) * | 2002-05-31 | 2004-11-02 | Hewlett-Packard Development Company, L.P. | Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet |
| WO2004034467A2 (en) * | 2002-07-25 | 2004-04-22 | California Institute Of Technology | Sublithographic nanoscale memory architecture |
| US6940753B2 (en) * | 2002-09-24 | 2005-09-06 | Sandisk Corporation | Highly compact non-volatile memory and method therefor with space-efficient data registers |
| US6983428B2 (en) * | 2002-09-24 | 2006-01-03 | Sandisk Corporation | Highly compact non-volatile memory and method thereof |
| US6891753B2 (en) | 2002-09-24 | 2005-05-10 | Sandisk Corporation | Highly compact non-volatile memory and method therefor with internal serial buses |
| US6958946B2 (en) * | 2002-10-02 | 2005-10-25 | Hewlett-Packard Development Company, L.P. | Memory storage device which regulates sense voltages |
| CN100394603C (zh) | 2003-04-03 | 2008-06-11 | 株式会社东芝 | 相变存储装置 |
| GB0315692D0 (en) * | 2003-07-04 | 2003-08-13 | Hewlett Packard Development Co | Data storage apparatus |
| US7692952B2 (en) * | 2003-07-24 | 2010-04-06 | California Institute Of Technology | Nanoscale wire coding for stochastic assembly |
| WO2005053002A2 (en) * | 2003-11-25 | 2005-06-09 | Princeton University | Two-component, rectifying-junction memory element |
| US6980465B2 (en) * | 2003-12-19 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Addressing circuit for a cross-point memory array including cross-point resistive elements |
| US6862206B1 (en) | 2003-12-19 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Memory module hybridizing an atomic resolution storage (ARS) memory and a magnetic memory |
| US7106639B2 (en) * | 2004-09-01 | 2006-09-12 | Hewlett-Packard Development Company, L.P. | Defect management enabled PIRM and method |
| JP4513094B2 (ja) * | 2004-10-29 | 2010-07-28 | タカタ株式会社 | 車椅子固定装置 |
| US7786467B2 (en) * | 2005-04-25 | 2010-08-31 | Hewlett-Packard Development Company, L.P. | Three-dimensional nanoscale crossbars |
| US8102018B2 (en) * | 2005-05-09 | 2012-01-24 | Nantero Inc. | Nonvolatile resistive memories having scalable two-terminal nanotube switches |
| US8008745B2 (en) * | 2005-05-09 | 2011-08-30 | Nantero, Inc. | Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements |
| US7994509B2 (en) | 2005-11-01 | 2011-08-09 | Hewlett-Packard Development Company, L.P. | Structure and method for thin film device with stranded conductor |
| US7486534B2 (en) * | 2005-12-08 | 2009-02-03 | Macronix International Co., Ltd. | Diode-less array for one-time programmable memory |
| US7593256B2 (en) * | 2006-03-28 | 2009-09-22 | Contour Semiconductor, Inc. | Memory array with readout isolation |
| JP2008034741A (ja) * | 2006-07-31 | 2008-02-14 | Espec Corp | 半導体記憶装置およびその製造方法 |
| US7393739B2 (en) * | 2006-08-30 | 2008-07-01 | International Business Machines Corporation | Demultiplexers using transistors for accessing memory cell arrays |
| US7583554B2 (en) * | 2007-03-02 | 2009-09-01 | Freescale Semiconductor, Inc. | Integrated circuit fuse array |
| US7813157B2 (en) * | 2007-10-29 | 2010-10-12 | Contour Semiconductor, Inc. | Non-linear conductor memory |
| US20090225621A1 (en) * | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
| WO2009149061A2 (en) * | 2008-06-02 | 2009-12-10 | Contour Semiconductor, Inc. | Diode decoder array with non-sequential layout and methods of forming the same |
| KR101424139B1 (ko) * | 2008-08-01 | 2014-08-04 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 동작 방법 |
| JP2010079984A (ja) * | 2008-09-25 | 2010-04-08 | Semiconductor Energy Lab Co Ltd | 半導体記憶装置の駆動方法 |
| US8325556B2 (en) * | 2008-10-07 | 2012-12-04 | Contour Semiconductor, Inc. | Sequencing decoder circuit |
| US7974124B2 (en) * | 2009-06-24 | 2011-07-05 | Sandisk Corporation | Pointer based column selection techniques in non-volatile memories |
| US8514637B2 (en) * | 2009-07-13 | 2013-08-20 | Seagate Technology Llc | Systems and methods of cell selection in three-dimensional cross-point array memory devices |
| US8284597B2 (en) | 2010-05-06 | 2012-10-09 | Macronix International Co., Ltd. | Diode memory |
| US8842473B2 (en) | 2012-03-15 | 2014-09-23 | Sandisk Technologies Inc. | Techniques for accessing column selecting shift register with skipped entries in non-volatile memories |
| US8953387B2 (en) | 2013-06-10 | 2015-02-10 | Micron Technology, Inc. | Apparatuses and methods for efficient write in a cross-point array |
| US9312005B2 (en) | 2013-09-10 | 2016-04-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
| US9324423B2 (en) | 2014-05-07 | 2016-04-26 | Micron Technology, Inc. | Apparatuses and methods for bi-directional access of cross-point arrays |
| CN106653081B (zh) * | 2015-11-02 | 2020-04-10 | 中芯国际集成电路制造(北京)有限公司 | 电可编程熔丝单元、阵列以及存储单元 |
| US10497438B2 (en) | 2017-04-14 | 2019-12-03 | Sandisk Technologies Llc | Cross-point memory array addressing |
| US11099784B2 (en) * | 2019-12-17 | 2021-08-24 | Sandisk Technologies Llc | Crosspoint memory architecture for high bandwidth operation with small page buffer |
| WO2021166676A1 (ja) * | 2020-02-19 | 2021-08-26 | ソニーグループ株式会社 | 通信モジュール及び通信方法 |
| CN113270130B (zh) * | 2020-05-29 | 2024-08-09 | 台湾积体电路制造股份有限公司 | 存储器设备 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US287664A (en) * | 1883-10-30 | William cleather gordon | ||
| US4795657A (en) * | 1984-04-13 | 1989-01-03 | Energy Conversion Devices, Inc. | Method of fabricating a programmable array |
| US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
| FR2629941B1 (fr) * | 1988-04-12 | 1991-01-18 | Commissariat Energie Atomique | Memoire et cellule memoire statiques du type mis, procede de memorisation |
| GB9117680D0 (en) * | 1991-08-16 | 1991-10-02 | Philips Electronic Associated | Electronic matrix array devices |
| US5889694A (en) * | 1996-03-05 | 1999-03-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
| US5905670A (en) * | 1997-05-13 | 1999-05-18 | International Business Machines Corp. | ROM storage cell and method of fabrication |
| US6256767B1 (en) * | 1999-03-29 | 2001-07-03 | Hewlett-Packard Company | Demultiplexer for a molecular wire crossbar network (MWCN DEMUX) |
| US6466498B2 (en) * | 2001-01-10 | 2002-10-15 | Hewlett-Packard Company | Discontinuity-based memory cell sensing |
| US6535418B2 (en) * | 2001-07-24 | 2003-03-18 | Hewlett-Packard Development Company, Llp | Optically programmable address logic for solid state diode-based memory |
-
2001
- 2001-06-05 US US09/875,828 patent/US6385075B1/en not_active Expired - Lifetime
-
2002
- 2002-04-25 TW TW091108563A patent/TW556201B/zh not_active IP Right Cessation
- 2002-06-04 KR KR1020020031326A patent/KR20020092832A/ko not_active Ceased
- 2002-06-05 EP EP02253900A patent/EP1265253A3/en not_active Withdrawn
- 2002-06-05 CN CNB021224412A patent/CN100401422C/zh not_active Expired - Lifetime
- 2002-06-05 JP JP2002164628A patent/JP3936246B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN100401422C (zh) | 2008-07-09 |
| JP3936246B2 (ja) | 2007-06-27 |
| EP1265253A3 (en) | 2003-10-01 |
| US6385075B1 (en) | 2002-05-07 |
| CN1399275A (zh) | 2003-02-26 |
| EP1265253A2 (en) | 2002-12-11 |
| KR20020092832A (ko) | 2002-12-12 |
| JP2003059282A (ja) | 2003-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |