KR20020092832A - 어드레싱 회로 및 어드레싱 방법, 메모리 회로, 메모리시스템 및 메모리 모듈, 집적 회로 - Google Patents

어드레싱 회로 및 어드레싱 방법, 메모리 회로, 메모리시스템 및 메모리 모듈, 집적 회로 Download PDF

Info

Publication number
KR20020092832A
KR20020092832A KR1020020031326A KR20020031326A KR20020092832A KR 20020092832 A KR20020092832 A KR 20020092832A KR 1020020031326 A KR1020020031326 A KR 1020020031326A KR 20020031326 A KR20020031326 A KR 20020031326A KR 20020092832 A KR20020092832 A KR 20020092832A
Authority
KR
South Korea
Prior art keywords
memory
diode
memory array
addressing
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020031326A
Other languages
English (en)
Korean (ko)
Inventor
타우시그칼
엘더리챠드
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20020092832A publication Critical patent/KR20020092832A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
KR1020020031326A 2001-06-05 2002-06-04 어드레싱 회로 및 어드레싱 방법, 메모리 회로, 메모리시스템 및 메모리 모듈, 집적 회로 Ceased KR20020092832A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/875,828 2001-06-05
US09/875,828 US6385075B1 (en) 2001-06-05 2001-06-05 Parallel access of cross-point diode memory arrays

Publications (1)

Publication Number Publication Date
KR20020092832A true KR20020092832A (ko) 2002-12-12

Family

ID=25366422

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020031326A Ceased KR20020092832A (ko) 2001-06-05 2002-06-04 어드레싱 회로 및 어드레싱 방법, 메모리 회로, 메모리시스템 및 메모리 모듈, 집적 회로

Country Status (6)

Country Link
US (1) US6385075B1 (enExample)
EP (1) EP1265253A3 (enExample)
JP (1) JP3936246B2 (enExample)
KR (1) KR20020092832A (enExample)
CN (1) CN100401422C (enExample)
TW (1) TW556201B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) * 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
WO2002027768A2 (en) * 2000-09-27 2002-04-04 Nüp2 Incorporated Fabrication of semiconductor devices
US6567295B2 (en) * 2001-06-05 2003-05-20 Hewlett-Packard Development Company, L.P. Addressing and sensing a cross-point diode memory array
US6599796B2 (en) * 2001-06-29 2003-07-29 Hewlett-Packard Development Company, L.P. Apparatus and fabrication process to reduce crosstalk in pirm memory array
US6478231B1 (en) * 2001-06-29 2002-11-12 Hewlett Packard Company Methods for reducing the number of interconnects to the PIRM memory module
US6567301B2 (en) * 2001-08-09 2003-05-20 Hewlett-Packard Development Company, L.P. One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same
US6813182B2 (en) * 2002-05-31 2004-11-02 Hewlett-Packard Development Company, L.P. Diode-and-fuse memory elements for a write-once memory comprising an anisotropic semiconductor sheet
WO2004034467A2 (en) * 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
US6940753B2 (en) * 2002-09-24 2005-09-06 Sandisk Corporation Highly compact non-volatile memory and method therefor with space-efficient data registers
US6983428B2 (en) * 2002-09-24 2006-01-03 Sandisk Corporation Highly compact non-volatile memory and method thereof
US6891753B2 (en) 2002-09-24 2005-05-10 Sandisk Corporation Highly compact non-volatile memory and method therefor with internal serial buses
US6958946B2 (en) * 2002-10-02 2005-10-25 Hewlett-Packard Development Company, L.P. Memory storage device which regulates sense voltages
CN100394603C (zh) 2003-04-03 2008-06-11 株式会社东芝 相变存储装置
GB0315692D0 (en) * 2003-07-04 2003-08-13 Hewlett Packard Development Co Data storage apparatus
US7692952B2 (en) * 2003-07-24 2010-04-06 California Institute Of Technology Nanoscale wire coding for stochastic assembly
WO2005053002A2 (en) * 2003-11-25 2005-06-09 Princeton University Two-component, rectifying-junction memory element
US6980465B2 (en) * 2003-12-19 2005-12-27 Hewlett-Packard Development Company, L.P. Addressing circuit for a cross-point memory array including cross-point resistive elements
US6862206B1 (en) 2003-12-19 2005-03-01 Hewlett-Packard Development Company, L.P. Memory module hybridizing an atomic resolution storage (ARS) memory and a magnetic memory
US7106639B2 (en) * 2004-09-01 2006-09-12 Hewlett-Packard Development Company, L.P. Defect management enabled PIRM and method
JP4513094B2 (ja) * 2004-10-29 2010-07-28 タカタ株式会社 車椅子固定装置
US7786467B2 (en) * 2005-04-25 2010-08-31 Hewlett-Packard Development Company, L.P. Three-dimensional nanoscale crossbars
US8102018B2 (en) * 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US8008745B2 (en) * 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US7994509B2 (en) 2005-11-01 2011-08-09 Hewlett-Packard Development Company, L.P. Structure and method for thin film device with stranded conductor
US7486534B2 (en) * 2005-12-08 2009-02-03 Macronix International Co., Ltd. Diode-less array for one-time programmable memory
US7593256B2 (en) * 2006-03-28 2009-09-22 Contour Semiconductor, Inc. Memory array with readout isolation
JP2008034741A (ja) * 2006-07-31 2008-02-14 Espec Corp 半導体記憶装置およびその製造方法
US7393739B2 (en) * 2006-08-30 2008-07-01 International Business Machines Corporation Demultiplexers using transistors for accessing memory cell arrays
US7583554B2 (en) * 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US20090225621A1 (en) * 2008-03-05 2009-09-10 Shepard Daniel R Split decoder storage array and methods of forming the same
WO2009149061A2 (en) * 2008-06-02 2009-12-10 Contour Semiconductor, Inc. Diode decoder array with non-sequential layout and methods of forming the same
KR101424139B1 (ko) * 2008-08-01 2014-08-04 삼성전자주식회사 비휘발성 메모리 소자 및 그 동작 방법
JP2010079984A (ja) * 2008-09-25 2010-04-08 Semiconductor Energy Lab Co Ltd 半導体記憶装置の駆動方法
US8325556B2 (en) * 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit
US7974124B2 (en) * 2009-06-24 2011-07-05 Sandisk Corporation Pointer based column selection techniques in non-volatile memories
US8514637B2 (en) * 2009-07-13 2013-08-20 Seagate Technology Llc Systems and methods of cell selection in three-dimensional cross-point array memory devices
US8284597B2 (en) 2010-05-06 2012-10-09 Macronix International Co., Ltd. Diode memory
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8953387B2 (en) 2013-06-10 2015-02-10 Micron Technology, Inc. Apparatuses and methods for efficient write in a cross-point array
US9312005B2 (en) 2013-09-10 2016-04-12 Micron Technology, Inc. Accessing memory cells in parallel in a cross-point array
US9324423B2 (en) 2014-05-07 2016-04-26 Micron Technology, Inc. Apparatuses and methods for bi-directional access of cross-point arrays
CN106653081B (zh) * 2015-11-02 2020-04-10 中芯国际集成电路制造(北京)有限公司 电可编程熔丝单元、阵列以及存储单元
US10497438B2 (en) 2017-04-14 2019-12-03 Sandisk Technologies Llc Cross-point memory array addressing
US11099784B2 (en) * 2019-12-17 2021-08-24 Sandisk Technologies Llc Crosspoint memory architecture for high bandwidth operation with small page buffer
WO2021166676A1 (ja) * 2020-02-19 2021-08-26 ソニーグループ株式会社 通信モジュール及び通信方法
CN113270130B (zh) * 2020-05-29 2024-08-09 台湾积体电路制造股份有限公司 存储器设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US287664A (en) * 1883-10-30 William cleather gordon
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US4782340A (en) * 1986-08-22 1988-11-01 Energy Conversion Devices, Inc. Electronic arrays having thin film line drivers
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
GB9117680D0 (en) * 1991-08-16 1991-10-02 Philips Electronic Associated Electronic matrix array devices
US5889694A (en) * 1996-03-05 1999-03-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US5905670A (en) * 1997-05-13 1999-05-18 International Business Machines Corp. ROM storage cell and method of fabrication
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6466498B2 (en) * 2001-01-10 2002-10-15 Hewlett-Packard Company Discontinuity-based memory cell sensing
US6535418B2 (en) * 2001-07-24 2003-03-18 Hewlett-Packard Development Company, Llp Optically programmable address logic for solid state diode-based memory

Also Published As

Publication number Publication date
TW556201B (en) 2003-10-01
CN100401422C (zh) 2008-07-09
JP3936246B2 (ja) 2007-06-27
EP1265253A3 (en) 2003-10-01
US6385075B1 (en) 2002-05-07
CN1399275A (zh) 2003-02-26
EP1265253A2 (en) 2002-12-11
JP2003059282A (ja) 2003-02-28

Similar Documents

Publication Publication Date Title
US6385075B1 (en) Parallel access of cross-point diode memory arrays
US6567295B2 (en) Addressing and sensing a cross-point diode memory array
US6980465B2 (en) Addressing circuit for a cross-point memory array including cross-point resistive elements
US6646912B2 (en) Non-volatile memory
US6552409B2 (en) Techniques for addressing cross-point diode memory arrays
US6857054B2 (en) Write-once memory storage device
US6478231B1 (en) Methods for reducing the number of interconnects to the PIRM memory module
US6594171B1 (en) Memory systems and methods of making the same
US6661704B2 (en) Diode decoupled sensing method and apparatus
KR20050107813A (ko) 프로그램가능 저항 메모리 장치

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20020604

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20070604

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20020604

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20080626

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20080923

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20080626

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I