TW550591B - Memory architecture for supporting concurrent access of different types - Google Patents

Memory architecture for supporting concurrent access of different types Download PDF

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Publication number
TW550591B
TW550591B TW091103339A TW91103339A TW550591B TW 550591 B TW550591 B TW 550591B TW 091103339 A TW091103339 A TW 091103339A TW 91103339 A TW91103339 A TW 91103339A TW 550591 B TW550591 B TW 550591B
Authority
TW
Taiwan
Prior art keywords
access
row
memory
write
address
Prior art date
Application number
TW091103339A
Other languages
English (en)
Chinese (zh)
Inventor
Laura Elisabeth Simmons
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of TW550591B publication Critical patent/TW550591B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Multimedia (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Static Random-Access Memory (AREA)
TW091103339A 2001-05-29 2002-02-25 Memory architecture for supporting concurrent access of different types TW550591B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/870,361 US6587917B2 (en) 2001-05-29 2001-05-29 Memory architecture for supporting concurrent access of different types

Publications (1)

Publication Number Publication Date
TW550591B true TW550591B (en) 2003-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW091103339A TW550591B (en) 2001-05-29 2002-02-25 Memory architecture for supporting concurrent access of different types

Country Status (5)

Country Link
US (1) US6587917B2 (enExample)
EP (1) EP1262990A1 (enExample)
JP (1) JP2003022215A (enExample)
KR (1) KR100902473B1 (enExample)
TW (1) TW550591B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9424383B2 (en) 2011-04-11 2016-08-23 Nvidia Corporation Design, layout, and manufacturing techniques for multivariant integrated circuits
US9477597B2 (en) 2011-03-25 2016-10-25 Nvidia Corporation Techniques for different memory depths on different partitions
US9529712B2 (en) 2011-07-26 2016-12-27 Nvidia Corporation Techniques for balancing accesses to memory having different memory types

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WO2003027673A1 (en) * 2001-07-31 2003-04-03 Olympus Corporation Gene inspection apparatus and target nucleic acid extraction method using the same
JP3793062B2 (ja) * 2001-09-27 2006-07-05 株式会社東芝 メモリ内蔵データ処理装置
US7397848B2 (en) 2003-04-09 2008-07-08 Rambus Inc. Partial response receiver
US7126378B2 (en) 2003-12-17 2006-10-24 Rambus, Inc. High speed signaling system with adaptive transmit pre-emphasis
US8233322B2 (en) * 2003-10-10 2012-07-31 Micron Technology, Inc. Multi-partition memory with separated read and algorithm datalines
US7280428B2 (en) 2004-09-30 2007-10-09 Rambus Inc. Multi-column addressing mode memory system including an integrated circuit memory device
US8595459B2 (en) 2004-11-29 2013-11-26 Rambus Inc. Micro-threaded memory
US20070260841A1 (en) 2006-05-02 2007-11-08 Hampel Craig E Memory module with reduced access granularity
US9268719B2 (en) 2011-08-05 2016-02-23 Rambus Inc. Memory signal buffers and modules supporting variable access granularity
US9135982B2 (en) * 2013-12-18 2015-09-15 Intel Corporation Techniques for accessing a dynamic random access memory array
US10055236B2 (en) * 2015-07-02 2018-08-21 Sandisk Technologies Llc Runtime data storage and/or retrieval

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US3638204A (en) * 1969-12-19 1972-01-25 Ibm Semiconductive cell for a storage having a plurality of simultaneously accessible locations
US4875196A (en) * 1987-09-08 1989-10-17 Sharp Microelectronic Technology, Inc. Method of operating data buffer apparatus
KR940008295B1 (ko) * 1989-08-28 1994-09-10 가부시기가이샤 히다찌세이사꾸쇼 반도체메모리
JP3532932B2 (ja) * 1991-05-20 2004-05-31 モトローラ・インコーポレイテッド 時間重複メモリ・アクセスを有するランダムにアクセス可能なメモリ
US5276642A (en) * 1991-07-15 1994-01-04 Micron Technology, Inc. Method for performing a split read/write operation in a dynamic random access memory
US5502683A (en) * 1993-04-20 1996-03-26 International Business Machines Corporation Dual ported memory with word line access control
JPH08235852A (ja) * 1995-02-28 1996-09-13 Mitsubishi Electric Corp 半導体記憶装置
JP3567043B2 (ja) * 1996-03-07 2004-09-15 株式会社ルネサステクノロジ 半導体記憶装置
JPH1031886A (ja) * 1996-07-17 1998-02-03 Nec Corp ランダムアクセスメモリ
US6157560A (en) * 1999-01-25 2000-12-05 Winbond Electronics Corporation Memory array datapath architecture
US6377492B1 (en) * 2001-03-19 2002-04-23 Etron Technologies, Inc. Memory architecture for read and write at the same time using a conventional cell
JP2009122495A (ja) * 2007-11-16 2009-06-04 Sun Tec Kk 波長選択性光減衰器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9477597B2 (en) 2011-03-25 2016-10-25 Nvidia Corporation Techniques for different memory depths on different partitions
US9424383B2 (en) 2011-04-11 2016-08-23 Nvidia Corporation Design, layout, and manufacturing techniques for multivariant integrated circuits
US9529712B2 (en) 2011-07-26 2016-12-27 Nvidia Corporation Techniques for balancing accesses to memory having different memory types

Also Published As

Publication number Publication date
JP2003022215A (ja) 2003-01-24
KR100902473B1 (ko) 2009-06-11
EP1262990A1 (en) 2002-12-04
KR20020090904A (ko) 2002-12-05
US20020184437A1 (en) 2002-12-05
US6587917B2 (en) 2003-07-01

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