TW548836B - Isolation of memory cells in cross point arrays - Google Patents
Isolation of memory cells in cross point arrays Download PDFInfo
- Publication number
- TW548836B TW548836B TW091113803A TW91113803A TW548836B TW 548836 B TW548836 B TW 548836B TW 091113803 A TW091113803 A TW 091113803A TW 91113803 A TW91113803 A TW 91113803A TW 548836 B TW548836 B TW 548836B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- region
- gate oxide
- patent application
- pillar
- Prior art date
Links
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 239000002210 silicon-based material Substances 0.000 description 1
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- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/912,565 US6462388B1 (en) | 2001-07-26 | 2001-07-26 | Isolation of memory cells in cross point arrays |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW548836B true TW548836B (en) | 2003-08-21 |
Family
ID=25432127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091113803A TW548836B (en) | 2001-07-26 | 2002-06-24 | Isolation of memory cells in cross point arrays |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6462388B1 (enExample) |
| EP (1) | EP1280209B1 (enExample) |
| JP (1) | JP4316197B2 (enExample) |
| KR (1) | KR100890018B1 (enExample) |
| CN (1) | CN1400664A (enExample) |
| DE (1) | DE60238812D1 (enExample) |
| TW (1) | TW548836B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6740944B1 (en) | 2001-07-05 | 2004-05-25 | Altera Corporation | Dual-oxide transistors for the improvement of reliability and off-state leakage |
| US6982901B1 (en) * | 2003-01-31 | 2006-01-03 | Hewlett-Packard Development Company, L.P. | Memory device and method of use |
| US7132350B2 (en) * | 2003-07-21 | 2006-11-07 | Macronix International Co., Ltd. | Method for manufacturing a programmable eraseless memory |
| US20050035429A1 (en) * | 2003-08-15 | 2005-02-17 | Yeh Chih Chieh | Programmable eraseless memory |
| JP5015420B2 (ja) * | 2003-08-15 | 2012-08-29 | 旺宏電子股▲ふん▼有限公司 | プログラマブル消去不要メモリに対するプログラミング方法 |
| US7002197B2 (en) * | 2004-01-23 | 2006-02-21 | Hewlett-Packard Development Company, L.P. | Cross point resistive memory array |
| US7649496B1 (en) * | 2004-10-12 | 2010-01-19 | Guy Silver | EM rectifying antenna suitable for use in conjunction with a natural breakdown device |
| KR100809724B1 (ko) * | 2007-03-02 | 2008-03-06 | 삼성전자주식회사 | 터널링층을 구비한 바이폴라 스위칭 타입의 비휘발성메모리소자 |
| US7846782B2 (en) * | 2007-09-28 | 2010-12-07 | Sandisk 3D Llc | Diode array and method of making thereof |
| US7858506B2 (en) | 2008-06-18 | 2010-12-28 | Micron Technology, Inc. | Diodes, and methods of forming diodes |
| US8514637B2 (en) * | 2009-07-13 | 2013-08-20 | Seagate Technology Llc | Systems and methods of cell selection in three-dimensional cross-point array memory devices |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910001075B1 (ko) * | 1988-08-30 | 1991-02-23 | 안종운 | 콘크리트 제조용 믹서기의 바켓트 장치 |
| US5051796A (en) * | 1988-11-10 | 1991-09-24 | Texas Instruments Incorporated | Cross-point contact-free array with a high-density floating-gate structure |
| JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
| JP3254072B2 (ja) | 1994-02-15 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5446299A (en) * | 1994-04-29 | 1995-08-29 | International Business Machines Corporation | Semiconductor random access memory cell on silicon-on-insulator with dual control gates |
| US5455791A (en) * | 1994-06-01 | 1995-10-03 | Zaleski; Andrzei | Method for erasing data in EEPROM devices on SOI substrates and device therefor |
| US5751012A (en) * | 1995-06-07 | 1998-05-12 | Micron Technology, Inc. | Polysilicon pillar diode for use in a non-volatile memory cell |
| US5693955A (en) | 1996-03-29 | 1997-12-02 | Motorola | Tunnel transistor |
| US5714777A (en) * | 1997-02-19 | 1998-02-03 | International Business Machines Corporation | Si/SiGe vertical junction field effect transistor |
| US5838608A (en) | 1997-06-16 | 1998-11-17 | Motorola, Inc. | Multi-layer magnetic random access memory and method for fabricating thereof |
| US5991193A (en) | 1997-12-02 | 1999-11-23 | International Business Machines Corporation | Voltage biasing for magnetic ram with magnetic tunnel memory cells |
| US6180444B1 (en) | 1998-02-18 | 2001-01-30 | International Business Machines Corporation | Semiconductor device having ultra-sharp P-N junction and method of manufacturing the same |
| US6097625A (en) | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
| US5940319A (en) | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| US6165803A (en) | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
-
2001
- 2001-07-26 US US09/912,565 patent/US6462388B1/en not_active Expired - Lifetime
-
2002
- 2002-06-24 TW TW091113803A patent/TW548836B/zh not_active IP Right Cessation
- 2002-07-03 EP EP02254672A patent/EP1280209B1/en not_active Expired - Lifetime
- 2002-07-03 DE DE60238812T patent/DE60238812D1/de not_active Expired - Lifetime
- 2002-07-22 JP JP2002212807A patent/JP4316197B2/ja not_active Expired - Fee Related
- 2002-07-25 KR KR1020020043769A patent/KR100890018B1/ko not_active Expired - Fee Related
- 2002-07-26 CN CN02127076A patent/CN1400664A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1400664A (zh) | 2003-03-05 |
| US6462388B1 (en) | 2002-10-08 |
| JP4316197B2 (ja) | 2009-08-19 |
| EP1280209A3 (en) | 2004-05-12 |
| EP1280209A2 (en) | 2003-01-29 |
| EP1280209B1 (en) | 2011-01-05 |
| JP2003110093A (ja) | 2003-04-11 |
| KR100890018B1 (ko) | 2009-03-25 |
| KR20030010522A (ko) | 2003-02-05 |
| DE60238812D1 (de) | 2011-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |