TW531867B - Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface - Google Patents

Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface Download PDF

Info

Publication number
TW531867B
TW531867B TW090125246A TW90125246A TW531867B TW 531867 B TW531867 B TW 531867B TW 090125246 A TW090125246 A TW 090125246A TW 90125246 A TW90125246 A TW 90125246A TW 531867 B TW531867 B TW 531867B
Authority
TW
Taiwan
Prior art keywords
patent application
network
circuit
scope
bonding
Prior art date
Application number
TW090125246A
Other languages
English (en)
Inventor
Taylor R Efland
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW531867B publication Critical patent/TW531867B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48769—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01031—Gallium [Ga]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01043—Technetium [Tc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01083—Bismuth [Bi]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

531867
五、發明説明（1 發明範疇 本發明通常相關半導體裝置 能整合導線框之配電功能至 相關技藝說明 及製程之範疇，更特別相關 晶片表面之積體電路。
裝 已發明之半導體導線框（美國申請號3,71β，764及 4,034,027)作爲事先裝配之低成本部分，以同時供應許多半 導體裝置及其操作之需求。首先，該導線框提供-穩定支 撑塾以固足半導體晶片，該半導體晶片通常係_積體電路 (1C)晶片。由於該導線框，包括該墊，均以電導電材料製 成，必要時孩墊可偏壓到任何電位，該電電位係涉及該半 導體裝置的網路所需，尤其是指接地電位。 訂
第二’該導線框提供複數個導電區段以將不同電導體引 入晶片附近。在該區段（内部）尖端與IC表面接合墊間之其 餘缝隙通常由薄金屬線橋接，各別地與Z C接觸墊及導線框 區段接合。此解決方案結果係，固定該區段，接合墊及連 .接線至相對位置，一旦該裝置設計完成定案，該接合墊就 不能爲方便某些1C再設計而重新安排。 第三’遠離該IC晶片（外部尖端）之導線區段'末端必須係 以電及機械性連接至其他部分或外界，例如至組合印刷電 路板，絕大部分電子產品皆使用焊接接合。 一般實作皆從薄（約120至250 μm)金屬片以製造單個導線 框。爲了方便製造，一般選取之起始金屬爲銅，銅合金， 鐵鎳合金（即所謂合金42)及不變鋼。該導線框之期待形狀 係由原始鮝屬薄片蚀刻或壓印而得，以此方式，該導線框 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 531867 A7 ___B7 五、發明説明（2 ) 各別區段採用之薄金屬條紋形式具設計決定之特定幾何形 狀。爲大部分使用目的，一典型區段之長比寬大。 一般實作更著力於複數個區段用以攜帶電信號至指定晶 片輸入/輸出，並著力於另一複數個區段用以供應電流至指 定之晶片輸入/輸出。 兩個皆有長遠歷史之獨立半導體技術趨勢，突顯本發明 之迫切需要：第一個技術趨勢關心更多晶片信號，供電端 子及導線框區段之快速成長需求，也引進更精密區段尺寸 導線框，惟他們只是被晶片上越多且越密空間之接合墊更 快速成長需求所淹沒，這個趨勢引起對所有接合及線尺寸 更嚴格的限制，連帶地對附著球接合及缝接合焊接有更緊 密正確性之要求，這個趨勢已因技術可行性之限制而難推 進。 第二個技術趨勢關於藉由保留半導體面積來節省製造成 本’爲了配合接合線球或烊接球，在碎I c上之典型接合塾 皆屬十足尺寸；它們通常45 X 45 μπι平方至15〇xi5〇从111平 方。因此，它們需要用到大約電路面積之1到2〇%，有時上 至45% ’端視接合塾及1C尺寸而定。爲了製造'及組裝理由 ’接合塾沿著電路週邊以列配置’通常沿著所有電路四邊 争0 直到如今，因爲接合製程中不可避免之機械力及冶金壓 力造成電路結構遭受破壞之高風險，所有製成半導體裝置 皆必須從用以設計實際電路圖案面積排除由接合塾覆蓋之 面積。顯然地，如果電路圖案可置於接合墊金屬之下，即 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 531867 A7 B7 ___ 五、發明説明（3 ) 可節省相當可觀之碎面積。產生主要致力於接合螯形態之 另一層級金屬係達到此特點方法之一。此層級在覆蓋活性 電路面積之防護外衣上建立。惟在現存技術中，只有筇貴 之聚亞胺特別壓力緩衝層應用於防護外衣及外部金屬層之 間，如 K · G · Heinen 等人所著的（’’Wire Bonds over Active Circuits’’，Proc. IEEE 44th Elect. Comp. Tech· Conf.，1994 ，pp. 922-928) 〇 現存技術中，在美國專利案60/092,961，申請日07/14/98 (Saran，"System and Method for Bonding Over Active Integrated Circuits)提出不同之方法：爲了使接合墊夠強能耐得住線 接合製程中所要求之機械力，説明在接合墊下之加強系統 中係利用實際IC特定部分作爲在接合墊下加強弱介電層之 方法。此法需要特定設計及1C重新設計，很難適用於常有 許多接合墊但相對只有較小電路面積之標準線形及邏輯1C。 在美國專利申請號08/959,410，申請曰1〇-28·1997，專利 申請號 〇9/611，623，申請日 07-07-2000(Shen 等人，’’Integrated
Circuit with Bonding Layer over Active Circuitry”）及專利申 請號60/221,051，申請日 07-27-2000 (Efland等人，' "Integrated Power Circuits with Distributed Bonding and Current Flow)中 説明另一種在活性電路部分上形成接合之方法，本發明與 其相關。至該電路頂層金屬層之通孔由種子金屬塗佈，再 鍍以連續金屬層，藉此填補該通孔並形成吸壓接合面用於 線接合或焊接球。 在美國專利申請號09/458,593，申請日12-10-1999 (Zuniga -6- 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐） 531867 A7 B7___ 五、發明説明（4 ) 等人 ’ ” System and Method for Bonding over Integrated Circuits”）説明另一在活性電路部分上形成接合之方法，本 發明與其相關。結合可接合及吸壓金屬層，及一機械性堅 固的電絕緣層分開一接合墊與置於該接合墊下之部分積體 電路。 這些在活性電路上形成接合之方法沒有對微導程接合墊 ，微導程導線框，嚴格限制接合可製造性及改進裝置執行 等矛盾問題提出基本解決方案，因此引起對下列事項之急 切需求：節省矽面積及較鬆之線球與焊接球接合製造所結 合之低成本且可靠結構與方法，I C設計自由連同IC特性的 重要改進等。即使該接觸墊位於超過至少一結構及機械之 弱介電層上，該系統應提供無壓力，簡單及無附加成本之 接觸塾以用於具彈性，容忍力之接合製程中。該系統及方 法應可應用至極寬之設計，材料及方法多樣性範園，達到 可觀地節省矽，以及改進裝置特性，可靠性及製程良率。 較佳地，這些革新應可使用已安裝之製程及設備基礎，俾 能不需再投資新製造機器。 發明總結 一種積體電路（1C)晶片，安裝在一導線框上，具有沈積 在該晶片表面之配電線網路，俾使這些線置於該I c主動元 件之上，藉由金屬填補通孔垂直連接至在該線之下選取之 主動元件，也藉導體連接至該導線框之段。 可接合線之沈積並印製好圖案之網路提供許多重要優點。 該網路蔣大部分習用配電互連從電路位準重新安置到新 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 裝 玎
531867 A7 B7
產生之表面網路，因而節省大量矽面積，並使IC面積減少。 該網路藉由金屬填補通孔以電連接至所選取之主動元 ;由於能輕易重新設計這些通孔至其他位置，Ic設計= 得到新的設計自由度。 該網路將用於供電之大部分接合墊，從沿著晶片週邊之 習用對正，重新安置到新產生之可接合線，節省大量額外 矽面積，並使接合機器免去極緊湊之連接器放置及貼合規 則，而使接合程式更輕鬆。 該網路在晶圓製程中沈積並印製圖案作爲一系列金屬層 ，特別適於提供電流及接地電位。 ， 作爲本發明之較佳實例，該網路線路以可接合外層表面 ，設計成該線路在便於接合線球或焊接球之位置形成墊。 本發明之一較佳實例中，該半導體裝置晶片在該第一晶 片表面（主動表面）裝配一積體電路；該電路包括主動元件 ，至少金屬層，及藉一機械性堅固又電絕緣之外衣保護 ’該外衣具有複數個金屬填補通孔以接觸該至少一金屬層 ’及複數個窗口以暴露電路接觸塾。該晶片更具有一堆疊 導電膜沈積在該外衣上；該膜在該主動元件之上印製線網 路並成實質垂直。該堆疊有一與該通孔接觸之底膜，至少 一吸壓膜及一非腐蝕性並冶金可接合之外膜，該網路印製 成分配電流及接地電位，該晶片第二（被動）表面與導線框 之安裝塾接合’該導線框也有第一複數個段提供電信號， 及第二複數個段提供電力及接地。電導體以該複數個段連 接晶片接_墊，電導體以該第二複數個段連接該網路線。 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
裝 訂
531867 發明説明（6 概心係藉減少由電路配電 而減少1C晶片成本，以及藉 Η耗*^面積 太菸日U 4人 及猎由日口片接觸墊作爲電力連接。 本發明另一概念係藉由使至主、 :徑並無礙再設計，以增加電路採幾 本發明另-概念係藉鬆綁嚴格放置規則而改良組裝製造 力，孩規則係用在線接合及焊接合之球接合上。 ，=另-概念係藉由將大部分導線框配電功能委託位 於曰曰片表面〈新配電線網路’以減少用在輸入/輸出電力之 導線框段數目。 本發明另—概念係改進半導體探索之製程及操作可靠性 ，及藉由提供填充金屬層及絕緣層分開該接觸墊及電路之 線接合及焊接合组裝，該絕緣層在厚度上足以可靠地吸收 來自機械，溫度及緊密度之壓力。 本發明另一概念係消除在探測，線接合及 限制，因此即使非常易碎之電路介質遭受斷裂損害之風險 亦降至最低。 ϋ 本發明另一概念係提供彈性之設計，配置概念及製程方 法，俾便能應用於許多半導體1C產品家族，並且係通用俾 能應用於產品之許多代。 本發明另一概念係對裝配，測試及組裝提供一低成本及 高速之方法。 本發明另一概念係只使用在1C裝置裝配中最習用最被接 受之設計概念及方法，因此避免新資本投資成本，及可使 用已安裝之裝配設備基礎。 -9- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 裝 訂 線 531867 A7 B7____ 五、發明説明（7 ) 這些概念藉由敎導本發明有關設計概念及適用大量生產 之方法流程已達到目的。不同之修改亦成功地用於迎合不 同選取之產品幾何及材料。 由本發明所代表之技術進步，以及其目的，在同時考慮 連同附圖及附加之申請專利範圍中所陳述之新特點，將在 以下本發明較佳實例之詳細説明中更明朗。 附圖簡單説明 圖1係根據先前技藝的積體電路晶片一部分的簡化透視圖 ’該積體電路晶片具有接合線附著於接合墊上並連接至部 分導線框。 圖2係根據本發明的積體電路晶片一部分的簡化透視圖， 該積體電路晶片具有一整合電路及導線框配電功能的表面 結構。 較佳實例詳細説明 本發明相關美國專利申請號08/959,410，申請日1 0-28-1997，申請號 〇9/611，623，申請日 07-07-2000(Shen 等人， "Integrated Circuit with Bonding Layer over Active Circuitry”）， 及申請號 60/221，051，申請日 07-27-2000(Efland 等人， "Integrated Power Circuits with Distributed Bonding and Current Flow”），在此併作參考。 藉由強調已知技術的缺失即能很容易察覺本發明的影響 ，圖1説明一積體電路（1〇晶片一部分的簡化透視圖，通 常以100表示，具有先前技藝的設計及裝配特點。半導體基 板101(常是矽，厚度約介於225至475 μπι之間）具有第一（主 -10- 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐） 531867 A7 B7 五、發明説明（8 ) 動）表面1〇1&及第二（被動）表面1〇11)。該第二表面1〇1^附著 於預先裝配導線框（通常爲銅，銅合金或鐵鎳合金，厚度約 介於100至300 μπι之間）之晶片安裝墊（圖1中未示）。圖1中 只指出該導線框複數個導線（通常是1 4個至超過600個）中的 一些内部導線端點120a，120b，··.，它們用在行使電力供 應。 在該晶片第一表面10 la嵌入的是複數個1C主動元件（在現 代1C中，主動元件的數目很大，常超過1〇〇萬個，但以平行 及垂直小型化）。在表面10 la中更包括至少一金屬層（通常 是銘的純金屬或合金，厚度介於0.4及1.5 μιη之間；在某些 IC中，甚至有超過六階金屬層）。該金屬印刷線路以連接該 主動，被動元件及IC接觸墊，作爲傳導電力的金屬線，該 線寬度通常介於約20至250 μιη之間。圖1中圖示的是該金 屬的一小部分，在主動元件與接觸墊間印製設計圖案用作 迁迴配電線。 . 爲説明目的，圖1中之主動元件分成兩個分開的電迴路群 組。一迴路包括標明102&至1〇2η的主動元件；另一迴路包 括l〇3a至1〇3η的主動元件。互連電線1〇4及1〇5各別用來組 織該兩迴路。迴路1〇4有兩個終端i〇6a及i〇6b，該終端裝配 成接觸墊適合電導體用以連接該接觸墊與導線框的導線尖 端11〇。端視最常生產形式的裝置而定，每一晶片的接觸墊 數目可從14至超過600不等。圖1中，選擇線接合（通常是 金線’直徑約在2 0至28 μιη之間）作爲電互連的方法。球 l〇8a及l〇8b各別附著於接觸墊106a& 1〇6b，而缝11〇a& -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 x 297公釐) 裝 訂
531867 A7 ___ B7 五、發明説明（9 ) 110b各別附著於導線尖端i2〇a及120b。類似地，迴路1〇5有 兩個終端107a及l〇7b，該終端也裝配成接觸墊以用在線球 接合。球109a及l〇9b各別附著於接觸墊1〇7a及l〇7b，而缝 111&及1111)各別附著於導線尖端12〇(：及12〇(1。爲了避免線 鬆弛或線掃除的問題，線距最好保持小於2 $ min。 如圖1指明，該半導體基板101的第一表面101a_致地由 保護外衣130所覆蓋。在此外衣中，接觸墊1〇6a，1〇6b等均 打開成爲窗口。通常該外衣的厚度介於〇 8至丨2 μιη之間， 既是機械性堅固又是電絕緣，並常是防溼不透水；最好以 包括氮化矽及氧氮化矽的材料製成。 爲了操作該1C的信號輸入/輸出，需要在保護外衣中有額 外的窗口以暴露底下的接觸墊金屬物。這些窗口及其各別 的線接合在圖1中未示。 從圖1中可推論，用於1C設計，導線框及裝置設計，裝配 製程及產品製造的已知技術存在許多問題及限制。 .龟力輸入/輸出終端置於晶片週邊而須面臨的目前困難 -藉由長電線以互連主動元件； -待補償沿配電線不可避免的電壓落差； -須接受無彈性的主動元件放置設計規則；及 -須接受珍貴碎面積的損失。 -圍繞晶片週邊放置高數量的接合墊消耗珍貴的矽面積。 -圍繞晶片週邊放置高數量的接合墊而須面臨的目前趨勢 •縮小接合塾面積； -縮J、接合墊導程； -12- ---- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 531867 A7 B7 五、發明説明（1〇) -縮小線球俾能適合放入減小的接合塾面積；及 -將自動化接合器程式變得緊迫，以使球正確地置於 塾面積中央。 -一直增加導線數目的預先裝配導線框引起目前的困難 -縮小内部導線的寬度； -縮小内部導線點；及 -在小型化的内部導線上放置缝接合。 圖2總結本發明用以補救上述既往技術缺失的革新部分。 圖2係一 1C晶片一部分的簡化透視圖，通常以200標明，具 有本發明所揭示的設計及裝配特點。半導體基板2〇1具有第 一（主動）表面20 la及第二（被動）表面20 lb。第二表面附著 於預先裝配好導線框（通常是銅，銅合金，鐵-鎳合金，不 變鋼或鋁，厚度約在100至3 00 μιη之間）的晶片安裝塾（圖2 未示）。圖2只描述屬於複數個導線（常由14至超過6 00不等 )的一些導線框段頂點220a及220b，其行使電力供應並位於 IC晶片附近。 嵌在晶片第一表面20la中的是複數個1C的主動元件（在現 代1C中，主動元件的數目很大，常超過1〇〇萬個，但以平面 或垂直面小型化）。根據本發明，組織圖2所示2〇2&至2〇211 及203a至203η的主動元件是根據它們所共享的電力供應， 也依照該Ic功能所能允許的程度。所有主動元件2〇2a至 202η共享一電流終端（例如輸入終端），所有主動元件2〇3 & 至203η共旱另一終端（例如輸出終端）。圖2中，電流從元件 202a流至元件203a，··，及從元件2〇2η流至2〇3η。圖2中互 -13-
531867 A7 _____ B7 五、發明説明（11 ) 連線由短線所描述，例如從主動元件2〇2a至主動元件2〇h 的互連以204a標出；·，；從主動元件2〇2n至元件2〇3n的互 連以204η標出。 如圖2所説明，該半導體基板2〇1的第一表面2〇u，該⑴ 即敗在此表面中’是一致性地由保護外衣23〇所覆蓋。較佳 地，茲外衣厚度約在〇.4至丨5 μπι之間，機械性堅固，電絕 緣且能防溼。較佳的材料包括氮化矽，氧氮化矽，矽碳合 金及藉此形成之夾層膜。在某些應用中可使用聚亞胺層。 對本發明極重要的是配電線網路係在該保護外衣23〇的暴 露表面沈積，直接並實質垂直地位於該丨c的主動元件之上 。圖2中所示其中一配電線以25丨標出，另一配電線以252標 出。其材料結構及組合，以及裝配方法在以下説明。 而且’對本發明有重大重要性的是在配電線下所選取的 主動元件是傳導並垂直地連接至電線。較佳地，此連接由 金屬填補通孔260所提供，該通孔聯絡主動元件金屬部分及 •配電線。藉由使用標準微影技術印製圖案及蝕刻該外衣23〇 而形成該通孔260。以金屬連同以下所説明的電線金屬部分 沈積填補該通孔。 該沈積線251及252之外層金屬係從可接合的（及可焊接的 ’見以下説明）材料所選取。電導體連接此外層金屬與該導 線框的導線尖端。圖2中選擇線接合（該線最好是直徑約20 至30 μπι的金，銅或鋁純金屬或合金）以作爲電互連吟較佳 技術。球208及209各別附著至線251及252，而缝210及211 各別附著至導線尖端220a及22〇b。本發明之重要部分是最 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐） 531867 A7 B7 五、發明説明（12 ) 近在線接合方面技術進步如今允許緊密控制線迴路及迴路 形狀的形式。舉例來説，圖2所示迴路240比迴路241長。今 日的接合器可達成7.5 mm甚至更多的線長。例如此項進步 可在由美國賓州，Willow Grove，Kulicke & Soffa公司的電 腦化接合器8020，或美國德州達拉斯市的德州儀器公司的 ABACUS SA中所發現。透過空氣以預設及電腦控制方式移 動毛細管將產生正確界定形狀，例如可形成圓形，梯形， 線形及慣用的迴路。 用在線25 1及252的沈積配電金屬物的較佳結構組成如下 :一種子金屬層附著至該保護外衣230及該通孔260底部， 接著沈積第一較薄的吸I金屬層，第二較薄的吸壓層，最 後是一最外部可接合金屬層。最好該種子金屬層由以下群 組中所選取，包括鎢，歛，氮化鈥，细，路，及其合金。 該種子金屬層是電導性的，對該1C主動元件金屬物及該保 護外衣皆提供附著力，其上表面暴露部分可電鍍，並防止 後續吸磬金屬移往該元件金屬層。種子金屬層的厚度介於 100至500 nm之間。或者，該種子金屬層也可以兩金屬層組 成；一例中第二金屬是銅，因銅提供表面適合後續的電鍍。 應指出本發明中，單一種子金屬層最好以再製金屬製成 ，其具有夠大厚度以可靠地作爲吸壓緩衝，介於200至500 nm的厚度最令人滿意，最好是約300 nm。優吸壓厚度不僅 視所選取的金屬而定，也依選取的沈積技術，沈積比及沈 積期間矽基板溫度而定，因爲這些變數決定該沈積層的微 結晶。例如，已發現當使用鎢濺擊沈積時，最好以每秒4至 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 531867 A7 B7 五、發明説明（13 ) 5 nm的比率執行形成層至♦基板，當達到至少約300 nm厚 度時周圍溫度增加到7 0 °C左右。該鎢微結晶因此產生具有 平均尺寸及分配致使它們可在組裝的線接合製程中作爲可 靠的吸壓”彈簧”。 爲了沈積該吸壓層，使用電鍍方法是有利的。該第一吸 壓金屬層的一例是銅，2至35 μπι範圍内的厚度使其成爲機 械性堅固的支撑層以用在後續如接合線等連接導體的附著 。該第二吸壓金屬層的一例是鎳，其厚度約在1至5 μπι的 範圍。 最外層是冶金可接合及/或可焊接。如果所選取的連接方 法疋線接合（如圖2所示）及該最外層應可接合，最好選擇包 括鋁，金，鈀及銀的純金屬或其合金。如果所選取的連接 方法是焊接及該最外層應可焊接，最好選擇包括鈀，金， 銀及鉑等金屬。兩種情形中，該厚度皆在5〇〇至2800 範圍内。可以了解爲了適合特定裝置需求，層數目，層厚 •度及材料選擇以及沈積方法可有所不同。 該網路或分配線的電鍍圖案可形成任何想要的設計。如 圖2例子中可見連接器線圖可以是延長或線形形式，惟其功 能是透過該通孔垂直延伸至該元件金屬物。不然，例如它 可在該通孔直接面積外幾何性延伸及擴大至更寬部分以提 供足夠表面積以方便超大直徑的接合線或焊接球。那些附 著"塾”然後可同樣極適合用在附著楔接合或缝接合。 如上所指出，可選取最外線層俾使能焊接，焊接球然後 可藉由標单回流技術附著其上，惟以上所引述美國專利申 -16- 本紙張尺度適用中國國家標準(CNS) Α4規格(21〇 X 297公釐) 531867 A7 B7 五、發明説明（14 ) 請號09/611，623及60/221，051的説明中建議利用一額外焊接 光罩或聚亞胺層對每一焊接球皆具一開口，以使該覆晶隆 起物在形成隆起及後續附著至外部封裝或板期間保持在界 定面積及形狀内。 應提及可利用該配線的位置改良消散由該IC主動元件所 釋出之熱能，這在使用焊接隆起物作爲與外面世界的連接 方法，並將散熱用的熱路徑及熱電阻減至最小時更顯得特 別眞確。 爲了執行該1C的信號輸入/輸出，需要在保護外衣中有額 外的窗口以暴露以下的接觸墊金屬物。線接合或焊接球便 可固足至這些接觸窗口。這些窗口及其各別線接合並未在 圖2中描述。 須進一步提及至少沈積在該保護外衣上之一些線路及部 分分配網路可印製圖案，並致力提供接地電位的分配。 其他實例 •當本發明參考説明性實例加以説明時，此説明並非試圖 爲限制性詮釋。該説明性實例以及本發明的其他實例的不 同修改及結合對熟於此技藝的人在參考本説明時將很明顯。 舉例來説，本發明涵蓋以矽，鍺化矽，砷化鎵或任何其 他用於積體電路製造的半導體材料的基板製成的積體電路。 另一例，本發明通常涵蓋一半導體積體電路，其包括一 電路結構將電路配電功能以及用以連接至其他零件感外界 的工具整合至該1C晶片表面。該選取的配電線位置使其能 提供至該主動元件的電流控制及配置，較佳是在該配電線 -17- 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐) 531867 A7 B7 五、發明説明（15 ) 下垂直。 因此後附之申請專利範圍試圖包含任何此類修改或實例。 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)

Claims (1)

  1. D8 六、申請專利範園 一種安裝在導線框上之積體電路晶片，包括： 一配電線網路沈積在該晶片表面，位於該電路主動元 件正上方；及 該線路於其下方可傳導及垂直地連接至選取之主動元 件，並藉導體連接至該導線框之段，藉此省掉電路配電 線及導體塾所消耗之矽面積，增加電路設計彈性及組裝 製造力’並減少該段之輸入/輸出數目。 一種半導體裝置’在該晶片表面具有額外導體網路，其 中該積體電路之配電網路與該導線框之配電網路結合， 包括： 一半導體晶片’具有第一及第二表面； 一積體電路，建造在該第一表面，該電路具有主動元 件’至少有一金屬層，並由機械性堅固及對電絕緣之外 衣所保護，該外衣具有複數個金屬填補通孔以接觸該至 少一金屬層，並具有複數個窗口暴露電路接觸墊； 在該外衣上沈積並印製線路網路圖案之電導薄膜在該 主動元件上方實質垂直，該薄膜接觸該通孔並具有至少 一吸壓薄膜及一非腐蝕性並可附著金屬之外膜； 該網路定圖案以分配電流及接地電位； 一導線框，具有晶片安裝墊，第一複數段提供電信號 ，及第二複數個段提供電力及接地； \ 該第二晶片表面附著於該晶片安裝墊； 電導體以該第一複數段連接該晶片接觸墊；及 電導'體以該第二複數段連接該網路線路。 -19- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐） 531867 A B c D 六、申請專利範圍 3 ·如申請專利範圍第2項之裝置，其中該晶片由以下群組 .中所選取，包括矽，鍺化矽，砷化鎵，及其他習用於電 子裝置製造上之半導體材料。 4 .如申請專利範圍第2項之裝置，其中該電路包括複數個 主動及被動電子元件，以平行及垂直方式安排。 5·如申請專利範圍第2項之裝置，其中該積體電路包括多 層金屬，該多層金屬至少有一層由銅，鋁，鎳或耐火金 屬之純金屬或合金所製成。 6 ·如申請專利範圍第2項之裝置，其中該外衣包括由以下 群組中所選取之材料，包括氫化碎，氧氮化梦，梦碳合 金，聚亞胺，及由此產生之夹層膜。 7 ·如申請專利範圍第2項之裝置，其中該導線框由一薄板 狀材料所先製’該材料由以下群組中選取，包括銅，銅 合金，鋁，鐵鎳合金或不變鋼。 8 ·如申請專利範圍第2項之裝置，更包括一容器以封裝該 • 09片，日口片士裝塾，電導體及至少部分之該導線框段。 9. 如申請專利範圍第8項之裝置，包括該容器包括在轉換 模製製程中製造之聚合物合成。 10. 如申請專利範圍第8項之裝置，其中不包括在該容器内 (導線框段部分形狀如鉛條或針腳，可與外部零件焊接。 1 1 ·如申凊專利^圍第2項之裝置’其中該線路及接觸塾係 由焊接球與外部零件接合。 、 12.如申請專利制第2項之裝置，其中該冶金接合包括線 球及缝接合，帶接合及焊接。 -20- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐） 531867 A8 B8 C8 D8 、申請專利範圍 13.如申請專利範圍第2項之裝置，其中該電導薄膜包括至 •少一吸壓金屬層，該金屬層由以下群組中選取，包括銅 ，鎳，鋁，鎢，鈦，鉬，鉻及其合金。 1 4 ·如申請專利範圍第2項之裝置，其中該最外金屬層由以 下群組中選取，包括金，鈀，銀，鉑，鋁之純金屬或合 金。 1 5 ·如申請專利範圍第2項之裝置，其中該導體係接合線， 接合帶或焊接球。 1 6 ·如申請專利範圍第1 5項之裝置，其中該接合線由以下群 組中選取，包括金，銅及鋁之純金屬或合金。 1 7 ·如申請專利範圍第1 5項之裝置，其中該焊接球由以下群 組中選取，包括純鍚及錫合金，錫合金包括錫/銅，錫/ 鋼，錫/銀，錫/鉍，錫/鉛，及電導黏性化合物。 1 8 ·如申請專利範圍第2項之裝置，其中該線網路更以電連 接至適於外界電接觸之選取段。 } 9 ·如申請專利範圍第2項之裝置，其中該線網路，連同該 金屬填補通孔在該主動電路元件間提供配電功能。 20· —種製造半導體裝置之方法，該半導體裝置包括具有第 一及弟一表面之半導體晶片，該方法包括以下步驟： 在該第一晶片表上形成一積體電路，該電路包括主動 元件，至少一金屬層及一機械性堅固，與電絕緣之保護 外衣； & 經該外衣形成複數個通孔以進出該至少一金屬層； 藉由該外衣上沈積一堆疊金屬層而填補該通孔，該疊 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 531867 A8 B8 C8 D8 、申請專利範圍 具有至少一吸壓膜及一非腐蝕性並可與金屬接合之外膜； .在該膜印製線網路圖案，俾使該線路實質上垂直位於 該主動元件上並適合配電流； 在該外衣上形成複數個窗口以暴露電路接觸墊； 提供一預製導線框，包括晶片安裝墊，第一複數個段 用於電信號，及第二複數個段適於電力及接地； 接合該晶片至該晶片安裝墊； 接合電導體至該電路接觸墊及該第一複數個段；及 接合電導體至及該第二複數個段。 2 1 .如申請專利範圍第2 0項之方法，其中接合該電導體至該 電路接觸墊及該線網路之步驟，包括以接合線或接合帶 接合至該電路接觸墊及該線網路，或以回流焊接球接合 至該電路接觸墊及該線網路之步驟。 2 2.如申請專利範圍第20項之方法，更包括將該晶片，晶片 安裝墊，電導體及該導線框段之至少一部分封裝至容器 中之步驟。 2 3 .如申請專利範圍第2 0項之方法，更包括藉由焊接球貼合 該電路接觸墊及該線網路至外部零件之步驟。 -22- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）
TW090125246A 2000-10-13 2001-10-12 Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface TW531867B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24045200P 2000-10-13 2000-10-13

Publications (1)

Publication Number Publication Date
TW531867B true TW531867B (en) 2003-05-11

Family

ID=22906581

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090125246A TW531867B (en) 2000-10-13 2001-10-12 Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface

Country Status (6)

Country Link
US (2) US6972484B2 (zh)
EP (1) EP1198004A3 (zh)
JP (1) JP2002164383A (zh)
KR (1) KR100801360B1 (zh)
CN (1) CN1269212C (zh)
TW (1) TW531867B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6495442B1 (en) 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
TWI283443B (en) 2004-07-16 2007-07-01 Megica Corp Post-passivation process and process of forming a polymer layer on the chip
US7868468B2 (en) * 2004-11-12 2011-01-11 Stats Chippac Ltd. Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates
TWI368974B (en) * 2004-11-12 2012-07-21 Chippac Inc Ball-on-trace wire bond interconnection
US7265443B2 (en) * 2005-04-29 2007-09-04 Texas Instruments Incorporated Wire bonded semiconductor device having low inductance and noise
TWI269420B (en) 2005-05-03 2006-12-21 Megica Corp Stacked chip package and process thereof
US7737564B2 (en) * 2006-01-19 2010-06-15 Lsi Corporation Power configuration method for structured ASICs
US20070187808A1 (en) * 2006-02-16 2007-08-16 Easic Corporation Customizable power and ground pins
US7960825B2 (en) * 2006-09-06 2011-06-14 Megica Corporation Chip package and method for fabricating the same
US8030775B2 (en) 2007-08-27 2011-10-04 Megica Corporation Wirebond over post passivation thick metal
JP2010192680A (ja) * 2009-02-18 2010-09-02 Elpida Memory Inc 半導体装置
CN101510535B (zh) * 2009-04-03 2010-11-03 智原科技股份有限公司 用于实现芯片的输出入单元及实现一芯片的制造方法
US8572840B2 (en) 2010-09-30 2013-11-05 International Business Machines Corporation Method of attaching an electronic module power supply
US8304868B2 (en) 2010-10-12 2012-11-06 Texas Instruments Incorporated Multi-component electronic system having leadframe with support-free with cantilever leads
KR101398017B1 (ko) * 2012-09-12 2014-05-28 앰코 테크놀로지 코리아 주식회사 엠엘에프형 반도체 패키지 및 그 제조 방법
US10128229B1 (en) 2017-11-13 2018-11-13 Micron Technology, Inc. Semiconductor devices with package-level configurability
US10283462B1 (en) * 2017-11-13 2019-05-07 Micron Technology, Inc. Semiconductor devices with post-probe configurability
US10483241B1 (en) 2018-06-27 2019-11-19 Micron Technology, Inc. Semiconductor devices with through silicon vias and package-level configurability
DE202018004354U1 (de) * 2018-09-19 2018-10-15 Heraeus Sensor Technology Gmbh Widerstandsbauelement zur Oberflächenmontage auf einer Leiterplatte und Leiterplatte mit zumindest einem darauf angeordneten Widerstandsbauelement
US10867991B2 (en) * 2018-12-27 2020-12-15 Micron Technology, Inc. Semiconductor devices with package-level configurability

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226564A (ja) * 1992-02-14 1993-09-03 Rohm Co Ltd 半導体装置
EP0637840A1 (en) * 1993-08-05 1995-02-08 AT&T Corp. Integrated circuit with active devices under bond pads
KR950010762B1 (ko) * 1993-10-14 1995-09-22 엘지전자주식회사 아날로그 디지탈 변환 데이타의 안정화 방법
JP2536436B2 (ja) * 1993-11-19 1996-09-18 日本電気株式会社 モ―ルド型半導体装置
KR0145394B1 (ko) * 1995-06-29 1998-07-01 김광호 전원 공급용 리드가 분리된 리드 온 칩용 리드프레임 및 그를 이용한 리드 온 칩 패키지와 버스바를 갖지 않으며 전원 공급용 리드가 분리된 리드 온 칩용 리드프레임 및 그를 이용한 리드 온 칩 패키지
JP3387282B2 (ja) * 1995-08-03 2003-03-17 日産自動車株式会社 半導体装置の構造及びその製造方法
US5965903A (en) * 1995-10-30 1999-10-12 Lucent Technologies Inc. Device and method of manufacture for an integrated circuit having a BIST circuit and bond pads incorporated therein
JPH09321214A (ja) * 1996-05-30 1997-12-12 Mitsubishi Electric Corp 半導体装置
US6033937A (en) * 1997-12-23 2000-03-07 Vlsi Technology, Inc. Si O2 wire bond insulation in semiconductor assemblies
US5986343A (en) * 1998-05-04 1999-11-16 Lucent Technologies Inc. Bond pad design for integrated circuits
TW445616B (en) * 1998-12-04 2001-07-11 Koninkl Philips Electronics Nv An integrated circuit device

Also Published As

Publication number Publication date
EP1198004A3 (en) 2003-10-01
CN1355567A (zh) 2002-06-26
CN1269212C (zh) 2006-08-09
KR100801360B1 (ko) 2008-02-05
US7060607B2 (en) 2006-06-13
JP2002164383A (ja) 2002-06-07
US20020043712A1 (en) 2002-04-18
EP1198004A2 (en) 2002-04-17
US6972484B2 (en) 2005-12-06
US20050248027A1 (en) 2005-11-10
KR20020029644A (ko) 2002-04-19

Similar Documents

Publication Publication Date Title
TW531867B (en) Circuit structure integrating the power distribution functions of circuits and leadframes into the chip surface
US6650013B2 (en) Method of manufacturing wire bonded microelectronic device assemblies
US7592246B2 (en) Method and semiconductor device having copper interconnect for bonding
EP1176640B1 (en) Contact structure of an integrated power circuit
US6163463A (en) Integrated circuit chip to substrate interconnection
US6864166B1 (en) Method of manufacturing wire bonded microelectronic device assemblies
US6800505B2 (en) Semiconductor device including edge bond pads and related methods
US4463059A (en) Layered metal film structures for LSI chip carriers adapted for solder bonding and wire bonding
US7326594B2 (en) Connecting a plurality of bond pads and/or inner leads with a single bond wire
WO1994024694A1 (en) Interconnection of integrated circuit chip and substrate
US7157790B2 (en) Single die stitch bonding

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees