TW522451B - Monitoring wafer for measuring film thickness - Google Patents

Monitoring wafer for measuring film thickness Download PDF

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Publication number
TW522451B
TW522451B TW091103444A TW91103444A TW522451B TW 522451 B TW522451 B TW 522451B TW 091103444 A TW091103444 A TW 091103444A TW 91103444 A TW91103444 A TW 91103444A TW 522451 B TW522451 B TW 522451B
Authority
TW
Taiwan
Prior art keywords
wafer
film thickness
monitoring
film
surface roughness
Prior art date
Application number
TW091103444A
Other languages
English (en)
Chinese (zh)
Inventor
Makoto Ebata
Fusao Fujita
Makoto Saito
Original Assignee
Mitsui Engineering & Amp Shipb
Admap Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering & Amp Shipb, Admap Inc filed Critical Mitsui Engineering & Amp Shipb
Application granted granted Critical
Publication of TW522451B publication Critical patent/TW522451B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
TW091103444A 2001-03-05 2002-02-26 Monitoring wafer for measuring film thickness TW522451B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001060367 2001-03-05
JP2002031015A JP3990575B2 (ja) 2001-03-05 2002-02-07 膜厚測定用モニタウェハ

Publications (1)

Publication Number Publication Date
TW522451B true TW522451B (en) 2003-03-01

Family

ID=26610632

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091103444A TW522451B (en) 2001-03-05 2002-02-26 Monitoring wafer for measuring film thickness

Country Status (6)

Country Link
US (1) US7087980B2 (https=)
EP (1) EP1408544B1 (https=)
JP (1) JP3990575B2 (https=)
KR (1) KR100607890B1 (https=)
TW (1) TW522451B (https=)
WO (1) WO2002071473A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453801B (zh) * 2010-02-03 2014-09-21 世創電子材料公司 製造具有磊晶沉積層之由矽構成的半導體晶圓的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7641736B2 (en) * 2005-02-22 2010-01-05 Hitachi Metals, Ltd. Method of manufacturing SiC single crystal wafer
US8298609B1 (en) * 2010-06-14 2012-10-30 Wd Media, Inc. Method and system for interrogating the thickness of a carbon layer
JP6610785B2 (ja) * 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
WO2018159754A1 (ja) * 2017-03-02 2018-09-07 信越化学工業株式会社 炭化珪素基板の製造方法及び炭化珪素基板
US11043437B2 (en) * 2019-01-07 2021-06-22 Applied Materials, Inc. Transparent substrate with light blocking edge exclusion zone
US12077880B2 (en) * 2021-04-28 2024-09-03 Applied Materials, Inc. In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
FR3148671A1 (fr) * 2023-05-12 2024-11-15 Soitec Procédé de fabrication d’une pluralité de substrats de carbure de silicium polycristallin

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316283A (ja) * 1995-05-19 1996-11-29 Kobe Steel Ltd ダミーウエハー
SG71903A1 (en) * 1998-01-30 2000-04-18 Canon Kk Process of reclamation of soi substrate and reproduced substrate
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI453801B (zh) * 2010-02-03 2014-09-21 世創電子材料公司 製造具有磊晶沉積層之由矽構成的半導體晶圓的方法
US9410265B2 (en) 2010-02-03 2016-08-09 Siltronic Ag Method for producing a semiconductor wafer composed of silicon with an epitaxially deposited layer

Also Published As

Publication number Publication date
US7087980B2 (en) 2006-08-08
EP1408544A4 (en) 2009-06-17
JP2002334911A (ja) 2002-11-22
JP3990575B2 (ja) 2007-10-17
EP1408544B1 (en) 2011-08-24
EP1408544A1 (en) 2004-04-14
WO2002071473A1 (en) 2002-09-12
KR100607890B1 (ko) 2006-08-03
US20040067370A1 (en) 2004-04-08
KR20030085536A (ko) 2003-11-05

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