JP3990575B2 - 膜厚測定用モニタウェハ - Google Patents

膜厚測定用モニタウェハ Download PDF

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Publication number
JP3990575B2
JP3990575B2 JP2002031015A JP2002031015A JP3990575B2 JP 3990575 B2 JP3990575 B2 JP 3990575B2 JP 2002031015 A JP2002031015 A JP 2002031015A JP 2002031015 A JP2002031015 A JP 2002031015A JP 3990575 B2 JP3990575 B2 JP 3990575B2
Authority
JP
Japan
Prior art keywords
wafer
film thickness
sic
monitor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002031015A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002334911A (ja
JP2002334911A5 (https=
Inventor
誠 江端
房雄 藤田
誠 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Engineering and Shipbuilding Co Ltd
Ferrotec Material Technologies Corp
Mitsui E&S Co Ltd
Original Assignee
Mitsui Engineering and Shipbuilding Co Ltd
Admap Inc
Mitsui E&S Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Engineering and Shipbuilding Co Ltd, Admap Inc, Mitsui E&S Holdings Co Ltd filed Critical Mitsui Engineering and Shipbuilding Co Ltd
Priority to JP2002031015A priority Critical patent/JP3990575B2/ja
Priority to TW091103444A priority patent/TW522451B/zh
Priority to PCT/JP2002/001956 priority patent/WO2002071473A1/ja
Priority to KR1020037011256A priority patent/KR100607890B1/ko
Priority to US10/468,899 priority patent/US7087980B2/en
Priority to EP02701695A priority patent/EP1408544B1/en
Publication of JP2002334911A publication Critical patent/JP2002334911A/ja
Publication of JP2002334911A5 publication Critical patent/JP2002334911A5/ja
Application granted granted Critical
Publication of JP3990575B2 publication Critical patent/JP3990575B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
JP2002031015A 2001-03-05 2002-02-07 膜厚測定用モニタウェハ Expired - Fee Related JP3990575B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002031015A JP3990575B2 (ja) 2001-03-05 2002-02-07 膜厚測定用モニタウェハ
TW091103444A TW522451B (en) 2001-03-05 2002-02-26 Monitoring wafer for measuring film thickness
KR1020037011256A KR100607890B1 (ko) 2001-03-05 2002-03-04 막두께 측정용 모니터 웨이퍼
US10/468,899 US7087980B2 (en) 2001-03-05 2002-03-04 Film thickness measuring monitor wafer
PCT/JP2002/001956 WO2002071473A1 (en) 2001-03-05 2002-03-04 Film thichness measuring monitor wafer
EP02701695A EP1408544B1 (en) 2001-03-05 2002-03-04 Film thichness measuring monitor wafer

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001060367 2001-03-05
JP2001-60367 2001-03-05
JP2002031015A JP3990575B2 (ja) 2001-03-05 2002-02-07 膜厚測定用モニタウェハ

Publications (3)

Publication Number Publication Date
JP2002334911A JP2002334911A (ja) 2002-11-22
JP2002334911A5 JP2002334911A5 (https=) 2005-08-18
JP3990575B2 true JP3990575B2 (ja) 2007-10-17

Family

ID=26610632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002031015A Expired - Fee Related JP3990575B2 (ja) 2001-03-05 2002-02-07 膜厚測定用モニタウェハ

Country Status (6)

Country Link
US (1) US7087980B2 (https=)
EP (1) EP1408544B1 (https=)
JP (1) JP3990575B2 (https=)
KR (1) KR100607890B1 (https=)
TW (1) TW522451B (https=)
WO (1) WO2002071473A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7641736B2 (en) * 2005-02-22 2010-01-05 Hitachi Metals, Ltd. Method of manufacturing SiC single crystal wafer
DE102010006725B4 (de) 2010-02-03 2016-03-03 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium mit einer epitaktisch abgeschiedenen Schicht
US8298609B1 (en) * 2010-06-14 2012-10-30 Wd Media, Inc. Method and system for interrogating the thickness of a carbon layer
JP6610785B2 (ja) * 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
WO2018159754A1 (ja) * 2017-03-02 2018-09-07 信越化学工業株式会社 炭化珪素基板の製造方法及び炭化珪素基板
US11043437B2 (en) * 2019-01-07 2021-06-22 Applied Materials, Inc. Transparent substrate with light blocking edge exclusion zone
US12077880B2 (en) * 2021-04-28 2024-09-03 Applied Materials, Inc. In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
FR3148671A1 (fr) * 2023-05-12 2024-11-15 Soitec Procédé de fabrication d’une pluralité de substrats de carbure de silicium polycristallin

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316283A (ja) * 1995-05-19 1996-11-29 Kobe Steel Ltd ダミーウエハー
SG71903A1 (en) * 1998-01-30 2000-04-18 Canon Kk Process of reclamation of soi substrate and reproduced substrate
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法

Also Published As

Publication number Publication date
US7087980B2 (en) 2006-08-08
EP1408544A4 (en) 2009-06-17
JP2002334911A (ja) 2002-11-22
EP1408544B1 (en) 2011-08-24
EP1408544A1 (en) 2004-04-14
WO2002071473A1 (en) 2002-09-12
KR100607890B1 (ko) 2006-08-03
TW522451B (en) 2003-03-01
US20040067370A1 (en) 2004-04-08
KR20030085536A (ko) 2003-11-05

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