KR100607890B1 - 막두께 측정용 모니터 웨이퍼 - Google Patents

막두께 측정용 모니터 웨이퍼 Download PDF

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Publication number
KR100607890B1
KR100607890B1 KR1020037011256A KR20037011256A KR100607890B1 KR 100607890 B1 KR100607890 B1 KR 100607890B1 KR 1020037011256 A KR1020037011256 A KR 1020037011256A KR 20037011256 A KR20037011256 A KR 20037011256A KR 100607890 B1 KR100607890 B1 KR 100607890B1
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KR
South Korea
Prior art keywords
wafer
film thickness
sic
film
monitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037011256A
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English (en)
Korean (ko)
Other versions
KR20030085536A (ko
Inventor
에바따마꼬또
후지따후사오
사이또마꼬또
Original Assignee
미쯔이 죠센 가부시키가이샤
가부시키가이샤 아드맵
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쯔이 죠센 가부시키가이샤, 가부시키가이샤 아드맵 filed Critical 미쯔이 죠센 가부시키가이샤
Publication of KR20030085536A publication Critical patent/KR20030085536A/ko
Application granted granted Critical
Publication of KR100607890B1 publication Critical patent/KR100607890B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020037011256A 2001-03-05 2002-03-04 막두께 측정용 모니터 웨이퍼 Expired - Fee Related KR100607890B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001060367 2001-03-05
JPJP-P-2001-00060367 2001-03-05
JP2002031015A JP3990575B2 (ja) 2001-03-05 2002-02-07 膜厚測定用モニタウェハ
JPJP-P-2002-00031015 2002-02-07
PCT/JP2002/001956 WO2002071473A1 (en) 2001-03-05 2002-03-04 Film thichness measuring monitor wafer

Publications (2)

Publication Number Publication Date
KR20030085536A KR20030085536A (ko) 2003-11-05
KR100607890B1 true KR100607890B1 (ko) 2006-08-03

Family

ID=26610632

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037011256A Expired - Fee Related KR100607890B1 (ko) 2001-03-05 2002-03-04 막두께 측정용 모니터 웨이퍼

Country Status (6)

Country Link
US (1) US7087980B2 (https=)
EP (1) EP1408544B1 (https=)
JP (1) JP3990575B2 (https=)
KR (1) KR100607890B1 (https=)
TW (1) TW522451B (https=)
WO (1) WO2002071473A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7641736B2 (en) * 2005-02-22 2010-01-05 Hitachi Metals, Ltd. Method of manufacturing SiC single crystal wafer
DE102010006725B4 (de) 2010-02-03 2016-03-03 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium mit einer epitaktisch abgeschiedenen Schicht
US8298609B1 (en) * 2010-06-14 2012-10-30 Wd Media, Inc. Method and system for interrogating the thickness of a carbon layer
JP6610785B2 (ja) * 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
WO2018159754A1 (ja) * 2017-03-02 2018-09-07 信越化学工業株式会社 炭化珪素基板の製造方法及び炭化珪素基板
US11043437B2 (en) * 2019-01-07 2021-06-22 Applied Materials, Inc. Transparent substrate with light blocking edge exclusion zone
US12077880B2 (en) * 2021-04-28 2024-09-03 Applied Materials, Inc. In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
FR3148671A1 (fr) * 2023-05-12 2024-11-15 Soitec Procédé de fabrication d’une pluralité de substrats de carbure de silicium polycristallin

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316283A (ja) * 1995-05-19 1996-11-29 Kobe Steel Ltd ダミーウエハー
SG71903A1 (en) * 1998-01-30 2000-04-18 Canon Kk Process of reclamation of soi substrate and reproduced substrate
JP2000349264A (ja) * 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
JP2000349266A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法

Also Published As

Publication number Publication date
US7087980B2 (en) 2006-08-08
EP1408544A4 (en) 2009-06-17
JP2002334911A (ja) 2002-11-22
JP3990575B2 (ja) 2007-10-17
EP1408544B1 (en) 2011-08-24
EP1408544A1 (en) 2004-04-14
WO2002071473A1 (en) 2002-09-12
TW522451B (en) 2003-03-01
US20040067370A1 (en) 2004-04-08
KR20030085536A (ko) 2003-11-05

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