TW512511B - An integrated circuit and a method of manufacturing an integrated circuit - Google Patents
An integrated circuit and a method of manufacturing an integrated circuit Download PDFInfo
- Publication number
- TW512511B TW512511B TW090115164A TW90115164A TW512511B TW 512511 B TW512511 B TW 512511B TW 090115164 A TW090115164 A TW 090115164A TW 90115164 A TW90115164 A TW 90115164A TW 512511 B TW512511 B TW 512511B
- Authority
- TW
- Taiwan
- Prior art keywords
- integrated circuit
- patent application
- conductive
- substrate
- isolated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Automation & Control Theory (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/604,519 US6833557B1 (en) | 2000-06-27 | 2000-06-27 | Integrated circuit and a method of manufacturing an integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW512511B true TW512511B (en) | 2002-12-01 |
Family
ID=24419923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090115164A TW512511B (en) | 2000-06-27 | 2001-06-21 | An integrated circuit and a method of manufacturing an integrated circuit |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6833557B1 (OSRAM) |
| JP (1) | JP3944764B2 (OSRAM) |
| KR (1) | KR100823043B1 (OSRAM) |
| GB (1) | GB2368973A (OSRAM) |
| TW (1) | TW512511B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7888672B2 (en) | 2002-11-23 | 2011-02-15 | Infineon Technologies Ag | Device for detecting stress migration properties |
| DE10254756B4 (de) * | 2002-11-23 | 2011-07-07 | Infineon Technologies AG, 81669 | Vorrichtung und Verfahren zur Erfassung von Stressmigrations-Eigenschaften |
| JP4949733B2 (ja) * | 2006-05-11 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR100764660B1 (ko) * | 2006-11-01 | 2007-10-08 | 삼성전기주식회사 | 주파수 종속 특성을 가지는 다중 배선의 신호 천이시뮬레이션 방법 |
| DE102014222203B3 (de) * | 2014-10-30 | 2016-03-10 | Infineon Technologies Ag | Überprüfung von Randschäden |
| US20190250208A1 (en) * | 2018-02-09 | 2019-08-15 | Qualcomm Incorporated | Apparatus and method for detecting damage to an integrated circuit |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387736A (ja) * | 1986-09-30 | 1988-04-19 | Nec Corp | 半導体装置 |
| JP2842598B2 (ja) * | 1988-12-01 | 1999-01-06 | 日本電気株式会社 | 半導体集積回路 |
| JPH04199651A (ja) * | 1990-11-29 | 1992-07-20 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JPH06177221A (ja) * | 1992-12-07 | 1994-06-24 | Fujitsu Ltd | 信頼性評価用半導体装置及び信頼性評価用の評価パターンを内蔵した製品lsi、ウエハー |
| JP3269171B2 (ja) * | 1993-04-08 | 2002-03-25 | セイコーエプソン株式会社 | 半導体装置およびそれを有した時計 |
| JPH07201855A (ja) * | 1993-12-28 | 1995-08-04 | Fujitsu Ltd | 半導体装置 |
| JP3270807B2 (ja) * | 1995-06-29 | 2002-04-02 | シャープ株式会社 | テープキャリアパッケージ |
| KR100190927B1 (ko) * | 1996-07-18 | 1999-06-01 | 윤종용 | 슬릿이 형성된 금속막을 구비한 반도체 칩 장치 |
| JP3111938B2 (ja) * | 1997-09-16 | 2000-11-27 | 日本電気株式会社 | 半導体装置 |
-
2000
- 2000-06-27 US US09/604,519 patent/US6833557B1/en not_active Expired - Fee Related
-
2001
- 2001-06-20 GB GB0115078A patent/GB2368973A/en not_active Withdrawn
- 2001-06-21 TW TW090115164A patent/TW512511B/zh not_active IP Right Cessation
- 2001-06-27 KR KR1020010037069A patent/KR100823043B1/ko not_active Expired - Fee Related
- 2001-06-27 JP JP2001193836A patent/JP3944764B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2368973A (en) | 2002-05-15 |
| JP3944764B2 (ja) | 2007-07-18 |
| GB0115078D0 (en) | 2001-08-15 |
| US6833557B1 (en) | 2004-12-21 |
| KR20020001632A (ko) | 2002-01-09 |
| KR100823043B1 (ko) | 2008-04-17 |
| JP2002093918A (ja) | 2002-03-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |