TW512168B - Composition and method for reducing dishing in patterned metal during CMP process - Google Patents
Composition and method for reducing dishing in patterned metal during CMP process Download PDFInfo
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- TW512168B TW512168B TW088116012A TW88116012A TW512168B TW 512168 B TW512168 B TW 512168B TW 088116012 A TW088116012 A TW 088116012A TW 88116012 A TW88116012 A TW 88116012A TW 512168 B TW512168 B TW 512168B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
經濟部智慧財產局員工消費合作社印製 512168 A7 B7_ 五、發明說明(ί ) 1 .發明領域 本發明僳有關於一種代替部分去離子水之黏度改質劑 之使用,其偽用於c Μ Ρ (化學機槭式拋光)期間,使明顯 滅少在電介質中,與小金屬表面一起嵌入圖型之大金屬 表面的凹陷。 一般而言,在CMP加工期間,與小金屬表面一起嵌入 如二氧化矽晶Η的電介質之圖型的一部分之大金屬表面 之平面化,僳藉由添加黏度改質劑至拋光漿液中而增加 其黏度,以獲得比單獨使用去離子水和磨料顆料、氧化 劑和包含分散劑和表面活性劑之其他化學藥劑時更明顯 較少之凹陷而完成的。該黏度改質劑的用董約為0.1至 5 0體積百分比。 2.先前技藝 在對於用來製造積體電路和其他電子設備之内層電介 質材料,進行化學機槭式抛光(CMP)期間,常使用漿液 和抛光墊以便於移除絶緣體、電介質、或金屬圓型材料 。許多CMP的應用例中,Si02之絶緣或電介質材料表面 與水溶液環境之Η 2 0進行水合反應産生羥基化Si分子的 表面網狀物。 但是當金颶為大表面且設計為嵌入在電介質中之圖型 化金颶的部分時(該電介質上之其他層和基質僳貼附在 一起)利用CMP法拋光經圖型化金屬,則會在大金屬物件 上産生急劇的凹陷。 美國專利第5,769,689號掲示一種用在拋光包括二氯化 矽之工件方法中的組成物,其中工件表面僳曝露在抛光 -3- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------------------訂---------線 (請先閲讀背面之注意事項再填寫本頁) 512168 A7 B7 五、發明說明( >
組成物中該組成物包含水、次微米s i 顆粒、濃度低於 組成物之臨界凝集濃度值之可溶性無機鹽,而且藉由添 加可溶性胺將該組成物的pH值調整在約9-10範圍内。
Kumar等人在材料賣料協會研討會論文集第427卷,第 237-242頁發表之「在甘油漿液中之銅;i化f -機械式拋 光(CHP)j揭示使用一種含甘油和Al2〇3磨料之漿料於銅 金鼷表面之加工中,使得錮適用於接線裝配中。該方法 是對銅行反應性雛子蝕刻的另一種選擇。 美國專利第5,607,718號發表化學機槭式.拋光技術用 於LSI之凹陷問題,其中添加數種化合物降低溶液速度 Μ滅少凹陷。這些化合物包括數種增稠劑,如矽酸鹽、 葡萄糖、黃耆膠和瓊脂(洋菜)。
Nogo等人在IEDH,第349-352頁 1 996 ΙΕΕΕ發表之「用 於自我停止之漿液工程無凹陷之SiO -CMPj揭示一種在 適用於S iO^i化學機械拋光(CMP)中之傳統Ce02漿體中 添加界面活性劑之漿液,K使無應變層或設計限制得到 在晶片中之整體平面化。 (請先閱讀背面之注意事項再填寫本頁) 示 揭 號 經濟部智慧財產局員工消費合作社印製 劑 加 添 他 其 47和 8,油 8. ί 5 甘 4,將 第係 利其 專, 國法 美方 ?** 理 處 的 面 表 靨 金 淨 潔 -*f 1 種 中 液 溶 入 加 起 得 酸之 硝油 ·、 甘 劑或 性醇 鹼二 括乙 包如 液或 溶醇 些二 這入 〇 加 面要 表霈 的視 勻並 均 , 更鹽 和酸 滑k 平亞 較和 到鹽 拋 學 化 電 的 化 面 平 分 成 * 種 各 使 漸 鼷 金 去 除 Η 第來 且利用 , 專中 醇國段 元美階 多 程 金 合 鋁 為 件 程 製 I 各 的 子 微 在 種 1 示 揭 號 ο ο 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 512168 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(+ ) 年3 …彻. 光技術,該專利係直接移除物件而且使用非黏性的多元 醇來加強移除。甘油的黏度在室溫下為水的1 500倍,其 係用於電蝕刻Μ增加竃解質黏度並促進拋光。 在上述專利和參考文獻中•該方法之重大缺點為並未 提及藉黏度改質劑來改良使用於化學機槭式拋光(CMP)製 程之漿疲,而使得當該工件進行化擧機槭式拋光時,得 Μ避免嵌人電介質(其他曆和基質係貼附在一起)之圖型化 金鼷的大金靨外觀有嚴重的凹陷所需的知識。 發明總論: 本發明的一個目的在於提供一種組成杨或漿液,當含 大金鼷表面與小金鼷表面一起嵌入於電介屣之工件進行 化學機械式拋光(CMP)時·上逑姐成物或漿液係可以避 免大金臑表面惫劇的凹陷。 本發明另一目的在於提供使用於化學機械式拋光中姐 成物或漿液黏度的改法,其係經由Κ改質劑取代漿液中 部分的去雛子水而達成的◊當含大金羼表面與小金屬表面 一起嵌入於霄介質之工件,使之進行CMP時•上逑改質法 係可顯著減少大金鼷表面急剌的凹陷。 本發明再一個目的在於提供一種經添加0.1至50體積X 之黏度改質劑而改良的漿液,當含大金鼷表面與小金鼷 表面一 k嵌入於電介質之工件使之進行CMP時,上述經 改良的漿液可顯著的阻止大金鼷表面急剌的凹陷。 一般而論,本發明已完成提供一種去雛子之組成物· 其中去雛子水被約0.1至ho體積X之黏度改質劑取代,並 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) I —III — — — — — — ^ i II ---I ti — !^---^ (請先閱讀背面之注意事項再填寫本頁) 512168 A7 B7 五、發明說明(4 ) 目利用黏度經改質過的漿液和適當的磨料,共同拋光含 大金鼷表面與小金鼷表面一起嵌入於電介質圖型中之工 件,並因此免除大金画表面於CMP期間之急劇的凹陷。 園式說明: 第1鼷顯示工件之橫截面圖,其係描述嵌入電介質之大 及小金鼷表面的圖型,而且在未經機械式拋光(CMP)製 程前,其中之其他層和基質係與電介質附著在一起。 第2 _為化學機械式拋光進行中途的已移除金鼷表面 之工件的橫截面圖。 第3匾為已完成化學機槭式拋光之工件之橫截面圖, 該圓顯示掩蓋的金鼷已被移走,只有金鼷圓型還留在其 上0 第4圓為第3圖工件之放大橫截面圖,其顯示較大金 隱物件之特黴為具有較K先前技藝之化學機械式拋光( C Μ P )所得到者更急劇的凹陷。 第5匯為工件之放大横截面画,其顯示較大金屬物件 的特徵為不具有急刻的凹陷其係使工件表面經作為黏度 增強劑之含有0 . 1至約5 0體積!《之甘油而取代部份雛子水 之漿液處理而得到的。 第6圖顯示晶片或工件之不同區域中金鼷墊和線凹陷 的圜形,該晶Η或工件係具有嵌入在S i 0 2電介質中之大 和小金画表面的圖型,該電介質係Μ本發明之含有〇 . 1至 fifl體積%甘油取代去離子水的漿液而進行化學機械式拋光 (CMP)的。 -6 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 請 先 閱 讀 背 面 之 注 意 事 項 頁 經濟部智慧財產局員工消費合作社印製 512168 A7 B7_ 五、發明說明(f ) 發明說明: 本發明之上述及其他目的和優點,將根據下列較佳具 體奮life例之詳细說明而有更好的了解。 為保護金讓物件或管線使之在不加入虛擬結構或硬罩 的倩況下,避免於化學機槭式拋光中產生過度的凹陷, 本發明方法提倡加入黏度增強劑或改質劑於漿液中該漿 液之黏滯度係。可藉由添加任何黏度增強劑或改質劑而 增加,但是在本發明的內容中,較佳的增強劑或改質劑 為含有非-反應性的多元醇的材料。最佳者為甘油和聚 乙二醇。甘油或聚乙二醇取代了水溶性游漿中的部分去 離子水,而且含最高達約5 0體積%。隨著黏度增強劑而 產生的高黏度,限制了漿液磨料和化學反應的反應物/ 產物之動量和/或質量傳送,並進而減緩凹陷金鼷物件 或微電子裝置線的移除速率。 在電介質中含有金屬物件的工件中,很容易在該工件 之金鼷圏型的大金鼷物件上,觀察到凹陷減緩的改善, 而該凹陷在電介質金屬物件上是常見的琨象。 經濟部智慧財產局員工消費合作社印製 雖然不希望受制於已完成的如何避免嚴重凹陷的理論 ,但是儘管如此,仍相信使用非-反應性多元醇K取代 水溶性漿液中部分去離子水則對從大金屬表面的移除之 材料產生有限的效果,並且最終,因加入黏度增強劑到 漿液中,當於CMP後,則得到所需及最小的大金屬墊。 實施―例— 取CVD鎢膜作為晶Η形式之SiO電介質的圖型金屬表 -7- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 512168 Α7Β7 五、發明說明U ) 面。 取含有5重量百分比氧化鋁磨料、氧化劑和甘油(其濃 度可K改變,變化範圍約佔去離子水之〇·1至約50體積I) 之拋光漿液備用。溶液在拋光處理前,先混合均勻,Μ 確保漿液顆粒沒有沈澱。 表1列出漿液黏度的比較值,其係Μ甘油取代去離子 水之體積%計。 表 1 甘油體積% 淤漿黏度(e p s ) 0 3 . 4 25 5 . 7 50 12 經濟部智慧財產局員工消費合作社印製 一級磨料之氧化鋁尺寸為約0.01微米至約〇·〇3微米範 圍內,而在進行拋光處理前,將100毫升漿液傳送至拋光 墊上,然後在拋光步驟中Μ高達至約350毫升/分鐘的逮 率傳遞。 第1圖顯示工件之橫截面圖,其中金鼷10為具有嵌入 在電介質1 1中之大L和小S金鼷表面之圖型,而在未經化 學機槭式拋光(CMP)製程前,其他層和基質藉由箭頭12 附著其上。 從第2圖橫截面看來,透過人學機械式拋光途中,部 一 8 一 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 512168 A7
經濟部智慧財產局員工消費合作社印製 五、發明說明(7 ) 分金颶表面10移至表面20而電介質21仍實質維持不變。 從第3圖放大横截面圖看來,已經完成CMP,而掩蓋的 金羼業經移走,只有大和小圖型化金屬PM還田在電介質 上。 但是,從更放大的第4圖横截面圖更清楚看出·•如先 前技藝之CMP步驟所得一般,較大金屬物件或圖型歷經 更急劇的凹陷D。 利用本發明之黏度增強劑獎液’其中約有ο·1至約50 體積SK之甘油取代去離子水以作為黏度增強劑,則大金 颶圖型之凹陷D0TD深度己經如第5圖實質減少,大約為 施CMP步驟結果的三分之二❹虛線區域表不改善的程度。 如第6圖所示金屬損失曲面僳為甘油百分比、探針型 樣、和探針位置之函數,其偽表示在晶圓之CMP步驟中’ 使用本發明之甘油體積《對於金屬墊和線減損(凹陷)的 結果 〇 習知技藝者很容易得知本發明之其他優點以及修正方 法。據此,本發明較寛廣的觀點,像不在侷限於本文中 所列的詳細說明和所舉例的實施例❶因此,在不脱離如 所附申請專利範圍及其相當事物所定義之本發明的一般 發明概念之範醻或精神下,尚可作成各種不同的修飾例。 符號之說明 S 小 10 金屬 11 電介質 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------------------—^—----- (請先閱讀背面之注意事項再填寫本頁) 512168 A7 _B7 五、發明說明(Γ) 12 箭 頭 2 0 表 面 2 1 電 介 質 L 大 PM 圖 型 化 金羼 D0T0 凹 陷 深 度 D 凹 陷 -----I--------------訂---------線 (請先閲讀背面之注音?事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -10- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 512168 公告泰 ........... ......BJ — · r \六、申請專利範圍 -人% 第881 16012號「適用於圖型中金屬於化學機械式拋光期間 使減少凹陷之組成物及方法」 (91年9月修正) 六、申請專利範圍: 1 . 一種適用於化學機械式拋光期間使減少嵌入在電介質 工件中之經圖型化的大金屬表面凹陷之組成物,其特 徵在於黏度範圍爲3.4至12cps,且該組成物包括:取 代部分含磨料漿液中之去離子水以增加黏度量之黏度 增強劑,其中甘油用量佔去離子水之〇.1至50體積 2 .如申請專利範圍第1項之組成物,其中該黏度增強劑 爲選自甘油或聚乙二醇之非反應性多元醇。 3.如申請專利範圍第1項之組成物,其中該黏度增強劑 爲甘油。 ‘ 4 ·如申請專利範圍第1項之組成物,其中該磨料爲氧化 鋁。 5 · —種適用於化學機械式拋光期間使減少嵌入在電介質 工件中之經圖型化的大金屬表面凹陷之方法,該方法 包括:將工件表面曝露於拋光組成物中,而該組成物 包括取代部份含磨料漿液中之去離子水以增加黏度量 之黏度增強劑。 6 .如申請專利範圍第5項之方法,其中該黏度增強劑爲 選自甘油或聚乙二醇之非反應性多元醇。 512168 六、申請專利範圍 7 .如申請專利範圍第6項之方法,其中該黏度增強劑爲 甘油。 8 .如申請專利範圍第7項之方法,其中甘油用量佔去離 子水之0.1至50體積%。 9 .如申請專利範圍第8項之方法,其中該磨料爲氧化 鋁。 1 0 .如申請專利範圍第8項之方法,其中黏度範圍爲3.4 至 12cps 〇
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US20040253809A1 (en) * | 2001-08-18 | 2004-12-16 | Yao Xiang Yu | Forming a semiconductor structure using a combination of planarizing methods and electropolishing |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
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US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
KR100560307B1 (ko) * | 2002-12-30 | 2006-03-14 | 동부아남반도체 주식회사 | 반도체 소자 제조방법 |
IL161771A0 (en) * | 2004-05-04 | 2005-11-20 | J G Systems Inc | Method and composition to minimize dishing in semiconductor wafer processing |
US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
US20070264829A1 (en) * | 2006-05-12 | 2007-11-15 | Hynix Semiconductor Inc. | Slurry and method for chemical mechanical polishing |
CN101528885B (zh) * | 2006-08-30 | 2016-04-13 | 圣戈本陶瓷及塑料股份有限公司 | 用于磨料浆料的含水液体组合物,及其制备方法和使用方法 |
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EP0987307A2 (en) | 2000-03-22 |
JP2000169831A (ja) | 2000-06-20 |
KR20000023012A (ko) | 2000-04-25 |
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