CN1256992A - 化学机械抛光中用于减少有图案金属凹陷的组合物和方法 - Google Patents
化学机械抛光中用于减少有图案金属凹陷的组合物和方法 Download PDFInfo
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Abstract
本发明涉及一种在化学机械抛光中用于减少作为工件镶嵌于电介质中的有图案大金属面凹陷的组合物,包括:粘性增加量的增强剂代替含有研磨剂的抛光浆中的去离子水。
Description
本发明涉及使用一种粘性改性剂来代替一部分去离子水，以显著地减少在CMP(化学机械抛光)过程中镶嵌于在电介质内的和小金属表面一起的图案中的大金属表面的凹陷。
通常，在对嵌于电介质(例如二氧化硅晶片)内的金属图样进行CMP处理的过程中，作为连同小金属表面的图样一部分的大金属表面的平面化是采用向抛光浆中加入数量大约在0.1到50体积百分比的粘性改性剂来增加其粘性实现的，以得到比只采用去离子水和研磨颗粒、氧化剂、和其它包括分散剂和表面活性剂的化学试剂时少得多的凹陷。
对在集成电路和其它电子器件的制造中使用的如夹层电介质这样的材料进行化学机械抛光(CMP)过程中，一般使用抛光浆和抛光垫来帮助去掉绝缘体、电介质或者金属图案材料。在许多CMP应用中，绝缘材料或介电材料是二氧化硅，并且在有水的环境中，表面会与水进行水合反应产生羟基化的硅分子表面网络。
然而，如果金属是作为镶嵌于电介质中有图案的金属结构的一部分的一大块表面，该金属结构上附有其它层和衬底，那么采用CMP抛光有图案的金属会在更大的金属部件中产生大量的凹陷。
U.S.专利5,769,689公开了一种用于抛光由二氧化硅组成的工件的方法的组合物，其中工件的表面被暴露于含有水、亚微米二氧化硅颗粒、低于该组合物的临界凝结浓度的可溶无机盐的抛光组合物，并且向该组合物中加入可溶解胺调节其pH值在9～10的范围之内。
Kumar等人，“CHEMICAL-MECHANICAL POLISHING OFCOPPER IN GLYCEROL BASED SLURRIES”(在甘油基浆液中化学机械抛光铜)，Mat.Res.Soc.Symp.Proc.Vol.427，pps 237-242(1996)，公开了使用含有甘油和三氧化二铝研磨剂的抛光浆对铜金属表面进行CMP处理以使铜适合作互连接部件。这种方法是铜反应离子刻蚀的一种替代方法。
U.S.专利5,607,718公开了对LSI的针对凹陷问题的一种化学机械抛光技术。其中加入几种化合物以降低溶解速率并抑制凹陷。这些化合物包括一些增稠剂，如硅酸盐，葡萄糖，黄芪胶和琼脂。
Nogo等人，“SLURRY ENGINEERING FOR SELF-STOPPING，DISHING FREE SiO2-CMP”(用于自制动、无凹陷SiO2-化学机械抛光的浆液技术)，IEDM，pages 349-352，1996 IEEE，公开了一种抛光浆，其中加入一种表面活性剂到用于在化学机械抛光中的SiO2的传统CeO2抛光浆中，以在一个晶片内得到完全的平面化而没有任何停止层或设计限制。
U.S.专利4,588,474公开了在金属表面的一种清洁处理，在其中甘油连同其它一些添加剂被加进溶液以得到更光滑一致的表面。这些溶液包含一腐蚀剂、硝酸盐或亚硝酸盐，还可含二醇或多元醇，如乙烯乙二醇或甘油，而工件是一铝合金。
U.S.专利5,567,300公开了在微电子制造中不同步骤中的各种部件的金属去除和平面化的电化学抛光技术。这个专利以去除为主，并采用无粘性的多醇来提高去除。甘油在室温时其粘度是水的1500倍，在电蚀刻中使用甘油可增加电解液的粘滞性并促进抛光。
前述专利和参考文献中的方法的一个显著缺点是没有承认用粘性改性剂调节在CMP中使用的抛光浆的需要，以防止当镶嵌在其上附有其它层和衬层的电介质中的有图案金属的较大金属部件经化学机械抛光时的严重凹陷。
本发明的一个目的是提供一种组合物或抛光浆，当在电介质中含有金属部件的工件进行化学机械抛光CMP时，它能防止与小金属表面一起镶嵌于电介质中的大金属表面的严重的凹陷。
本发明的另一个目的是提供对在化学机械抛光中使用的组合物或抛光浆的粘性进行改性，采用的方法是将抛光浆中的去离子水代之以粘性改性剂，当在电介质中含有金属部件的工件进行化学机械抛光CMP时，它能显著减少与小金属表面一起镶嵌于电介质中的大金属表面的严重的凹陷。
本发明的另一个目的是提供一种通过向其中加入量为从0.1到50体积百分比的粘度改性剂而改性的抛光浆，当在电介质中含有金属部件的工件进行化学机械抛光CMP时，以显著阻止与小金属表面一起镶嵌于电介质中的大金属表面的严重的凹陷。
总之，采用去离子组合物，其中的一部分去离子水被约为0.1～50体积百分比的粘度改性剂代替，与合适的研磨剂一起使用经过粘度改性的抛光浆来抛光含连同图案中的小表面一起镶嵌于电介质中的大金属表面的工件，防止在CMP过程中大金属表面严重的凹陷，以实现本发明。
图1是一工件的横截面图，它描绘了镶嵌于电介质中的大的和小的金属面的图案，在CMP之前其它层和衬底附于此电介质上。
图2是一工件的横截面图，此工件已经进行了一半化学机械抛光，部分金属表面已经被去掉。
图3是一工件的横截面图，它显示了CMP完成，其中覆盖的金属已经被去掉，金属只留在图案中。
图4是图3中的工件放大的横截面图，显示出作为现有工艺CMP的结果，较大的金属部件有更严重的凹陷。
图5是一工件放大的横截面图，显示出使用含有0.1到50体积百分比的甘油为粘度改性剂以代替一部分去离子水的抛光浆的结果，较大的金属面不再有严重的凹陷。
图6显示了采用本发明的含有从0.1到50体积百分比的甘油以代替去离子水的抛光浆进行CMP后，镶嵌于二氧化硅电介质中的有不同大小金属面的晶片或工件的不同位置，金属线和金属垫的凹陷。
以下面的本发明优选实施方案的详细说明可以更好地理解本发明前面提到的和其它的目的和优点。
为防止在化学机械抛光中金属部件或金属线过度凹陷而不增加模型结构或者硬掩模，本发明向抛光浆中引入一种粘度增强剂或改性剂。加入任何粘度增强剂或改性剂都可以增加抛光剂的粘性；然而，在本发明的范围内，优选的增强剂或改性剂是非反应性的含多元醇的材料。最佳的材料是甘油和聚乙二醇。甘油或聚乙二醇在水基的抛光浆中代替一部分去离子水达到50％体积。增强剂引入的高粘性限制了抛光浆研磨剂的动量和/或传质以及化学反应的反应物/生成物，并随之减慢微电子器件的凹陷的金属部件或线路的去除率。
在通常易发现凹陷的含有金属部件于电介质中的工件，其中金属图案中的大金属部件往往是凹陷减少的改进是容易被看到的。
尽管不愿受限制于关于防止严重的凹陷是如何实现的理论，但可以相信的是在基于水的抛光浆中使用一种非反应性的多元醇来代替一部分去离子水将导致对于从大金属面区域的材料去除的限制效应，最终在CMP处理之后，作为向抛光浆中引入粘度增强剂的结果，产生了所需的最少的大金属垫状凹陷。
实施例
以CVD钨薄膜用作在以晶片形式的SiO2电介质中的有图案的金属。
抛光浆由5％(重量)的氧化铝研磨剂、氧化剂和按去离子水体积计为0.1％至50％(体积)的甘油组成。在抛光之前，溶液被搅拌均匀以保证没有这些抛光浆颗粒的沉淀。
表I显示了基于代替去离子水的甘油所占的体积百分比的抛光浆的粘度的比较。
表I
甘油所占体积百分比 抛光浆粘度(cps)
0 3.4
25 5.7
50 12
氧化铝主研磨剂粒度在从0.01微米到0.3微米的范围内，在抛光开始之前加大约100ml抛光浆到抛光垫上，然后在抛光过程中以350ml/min的速率加抛光浆。
图1显示了一工件的横截面图，它显示了在化学机械抛光(CMP)之前，金属10有大L和小S金属面的图案镶嵌于电介质11中，其它层和箭头12所指的衬底附着在那里。
正如从图2中的横截面图中可以看到的，在化学机械抛光一半的时候金属面10的一部分被去掉直至表面20，电介质21基本保持不变。
图3的放大了的横截面图显示了CMP完成时的情况，覆盖金属已经被去掉，只有大的和小的图案金属PM保留在电介质中。
然而，图4的进一步放大的横截面图，可以清楚地看到，作为现有工艺CMP的结果，较大的金属部件经历更严重的凹陷D。
作为使用本发明的粘性增强的抛光浆的结果，其中以大约0.1至50体积百分比的甘油来代替一部分去离子水作为粘性增强剂，图5中显示的在大金属部件内的凹陷DOTD的深度在CMP结束时已经被充分地减少大约三分之二。画点的部分代表改进的程度。
失去的金属的轮廓作为甘油百分比、探测图样和探测位置的函数被画在图6中，图6显示了金属垫和线的凹陷作为在CMP步骤中在晶片上使用甘油体积百分比的结果。
熟知工艺的人将很容易想到另外的优点和改进。因此，在更广的方面本发明并不限制于在此显示和说明的细节和例子。所以，在不偏离所附录的权利要求和它们的等价物所定义的总发明概念的实质或范围，可以进行不同的改进。
Claims (12)
1.一种在化学机械抛光中用于减少作为工件镶嵌于电介质中的有图案大金属面凹陷的组合物，包括：增加粘性量的增强剂代替含有研磨剂的抛光浆中的去离子水。
2.权利要求1的组成物，其中所说的粘性增强剂是非反应性的，选自甘油或聚乙二醇的多元醇。
3.权利要求2的组合物，其中所说的粘性增强剂是甘油。
4.权利要求3的组合物，其中所说的甘油占去离子水0.1至50体积百分比。
5.权利要求4的组合物，其中所说的研磨剂是氧化铝。
6.权利要求4的组合物，其特征在于粘度为3.4～12cps。
7.一种在化学机械抛光中用于减少作为工件镶嵌于电介质中的有图案大金属面凹陷的方法，包括：暴露所说的工件的表面于抛光组合物，该组合物包括粘性增加量的增强剂代替含有研磨剂的抛光浆中的去离子水。
8.权利要求7的组合物，其中所说的粘性增强剂是非反应性的、选自甘油或聚乙二醇的多元醇。
9.权利要求8的组合物，其中所说的粘性增强剂是甘油。
10.权利要求9的组合物，其中所说的甘油占去离子水0.1至50体积百分比。
11.权利要求10的组合物，其中所说的研磨剂是氧化铝。
12.权利要求10的组合物，其特征在于粘度为3.4～12cps。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/156,071 US6149830A (en) | 1998-09-17 | 1998-09-17 | Composition and method for reducing dishing in patterned metal during CMP process |
| US09/156071 | 1998-09-17 |
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| CN1256992A true CN1256992A (zh) | 2000-06-21 |
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| CN99120301A Pending CN1256992A (zh) | 1998-09-17 | 1999-09-17 | 化学机械抛光中用于减少有图案金属凹陷的组合物和方法 |
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| Country | Link |
|---|---|
| US (1) | US6149830A (zh) |
| EP (1) | EP0987307A3 (zh) |
| JP (1) | JP2000169831A (zh) |
| KR (1) | KR20000023012A (zh) |
| CN (1) | CN1256992A (zh) |
| TW (1) | TW512168B (zh) |
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| KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
| AU2002336360A1 (en) * | 2001-08-17 | 2003-03-03 | Acm Research, Inc. | Forming a semiconductor structure using a combination of planarizing methods and electropolishing |
| US20040253809A1 (en) * | 2001-08-18 | 2004-12-16 | Yao Xiang Yu | Forming a semiconductor structure using a combination of planarizing methods and electropolishing |
| US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
| SG115405A1 (en) | 2001-09-17 | 2005-10-28 | Inst Of Microelectronics | Method for reducing dishing in chemical mechanical polishing |
| US6935933B1 (en) * | 2001-12-21 | 2005-08-30 | Lsi Logic Corporation | Viscous electropolishing system |
| US7199056B2 (en) * | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
| US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| KR100560307B1 (ko) * | 2002-12-30 | 2006-03-14 | 동부아남반도체 주식회사 | 반도체 소자 제조방법 |
| IL161771A0 (en) * | 2004-05-04 | 2005-11-20 | J G Systems Inc | Method and composition to minimize dishing in semiconductor wafer processing |
| US20060088976A1 (en) * | 2004-10-22 | 2006-04-27 | Applied Materials, Inc. | Methods and compositions for chemical mechanical polishing substrates |
| US20070264829A1 (en) * | 2006-05-12 | 2007-11-15 | Hynix Semiconductor Inc. | Slurry and method for chemical mechanical polishing |
| CN101528885B (zh) * | 2006-08-30 | 2016-04-13 | 圣戈本陶瓷及塑料股份有限公司 | 用于磨料浆料的含水液体组合物，及其制备方法和使用方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4116755A (en) * | 1977-09-06 | 1978-09-26 | Mcdonnell Douglas Corporation | Chem-milling of titanium and refractory metals |
| US4242842A (en) * | 1979-08-08 | 1981-01-06 | La Pierre Synthetique Baikowski, S.A. | Precision polishing suspension and method for making same |
| US4358295A (en) * | 1980-03-27 | 1982-11-09 | Matsushita Electric Industrial Co., Ltd. | Polishing method |
| US4588474A (en) * | 1981-02-03 | 1986-05-13 | Chem-Tronics, Incorporated | Chemical milling processes and etchants therefor |
| US4867757A (en) * | 1988-09-09 | 1989-09-19 | Nalco Chemical Company | Lapping slurry compositions with improved lap rate |
| US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
| US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
| US5567300A (en) * | 1994-09-02 | 1996-10-22 | Ibm Corporation | Electrochemical metal removal technique for planarization of surfaces |
| KR0147630B1 (ko) * | 1995-04-21 | 1998-11-02 | 김광호 | 반도체 장치의 소자분리방법 |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
| US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| JP2002517593A (ja) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属ｃｍｐにおける研磨用組成物および研磨方法 |
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1998
- 1998-09-17 US US09/156,071 patent/US6149830A/en not_active Expired - Lifetime
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1999
- 1999-09-09 KR KR1019990038282A patent/KR20000023012A/ko not_active Application Discontinuation
- 1999-09-14 JP JP26049599A patent/JP2000169831A/ja not_active Withdrawn
- 1999-09-17 EP EP99307401A patent/EP0987307A3/en not_active Withdrawn
- 1999-09-17 CN CN99120301A patent/CN1256992A/zh active Pending
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Also Published As
| Publication number | Publication date |
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| US6149830A (en) | 2000-11-21 |
| TW512168B (en) | 2002-12-01 |
| EP0987307A3 (en) | 2002-11-20 |
| EP0987307A2 (en) | 2000-03-22 |
| JP2000169831A (ja) | 2000-06-20 |
| KR20000023012A (ko) | 2000-04-25 |
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