TW508840B - A light emitting diode device that emits white light - Google Patents
A light emitting diode device that emits white light Download PDFInfo
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- TW508840B TW508840B TW090114416A TW90114416A TW508840B TW 508840 B TW508840 B TW 508840B TW 090114416 A TW090114416 A TW 090114416A TW 90114416 A TW90114416 A TW 90114416A TW 508840 B TW508840 B TW 508840B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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Description
508840 五、發明說明(1) 本發明揭示一種發光二極體裝置,特別是能夠產生白光 之發光二極體,其係藉由混合原基藍綠光與磷光質轉換之 紅色光以產生白色光。 使用於交通號誌綠色燈的發光二極體裝置(LED),所產 生藍綠光波長約為485至515毫微米。其波長發射範圍是由 法律所規定的,為上述波長範園内一極狹窄的次範圍。這 些LED在製造過程中接受測試以判定其所發射的光線是否 在法定的波長範圍内,未通過標準的LED通常會被丟棄。
隨著業界已開發出發射波長在450至520毫微米光譜範圍 的高效率LED,製造由磷光質轉換以增加部分LED原基發射 光波長的LED已經不是不可能的事。未轉換的部分原基發 射光與波長較長的光波混合產生白色光。如欲生產適合照 明(亦即擁有良好的色彩演繹能力)的白色發光L e D,所產 生的原基光波長至少要低於480毫微米。但如果led只是作 為提供訊號或顯示用途,原基發射光的波長可大於48〇毫 微米。經由磷光質轉換成為波長大於480毫微米的原基光 ,在直接目視下或以其光束撞擊擴散屏板,呈現出的仍為 白色光。此類Led適合各種顯示或訊號用途(例如行人交通 號然),但甚差的色彩演繹能力使其無法勝任照明方面的 用途。 行人交通號誌是目前唯一沒有使用LED的交通號誌燈。 行人交通號誌通常用白熾燈泡當號誌燈,這種燈泡較容易 燒掉,且需經常更換。如果能將產生白光的led用於交通 或其他訊號或顯示方面,應甚為理想。LED比白熾光燈泡 508840 五、發明說明(2) 消耗更低的能量,使用壽命更是長上好幾倍。因此LED較 不需要保養,使用於上述環境時比白熾光燈泡要更經濟。 因此業界需要發射白光的LED以用於訊號或顯示用途。 本發明提供一白色發光二極體(LED),其原基光的波長 約為485至515毫微米,相當於藍綠色光。此原基光的部分 光束被轉換成波長約為6 〇 〇至6 2 0毫微米的紅色光。至少部 分的轉換光與未轉換的原基光混合產生白色光。LED由基 板與其配置在基板表面的發光結構體所構成。該發光結構 體所發射的原基光束撞擊磷光質轉換元件後產生紅色光, 該紅色光與藍綠光混合產生白色光。
有數種磷光質轉換元件可適用於本發明的LED ,包括鱗 粉混合樹脂、鱗粉混合環氧化物、有機冷光染劑、填光質 轉換薄膜及磷光質轉換基板。較佳方式為磷光質轉換元科 的磷粉混合樹脂讓部分的原基光束撞擊樹脂後轉換成紅色 光,且讓部分的原基光不經轉換直接穿透樹脂。未轉換的 原基光與磷光質轉換成的紅色光混合成為白色光。本發明 具體實施例是將LED女裝在填充有磷光質轉換樹脂的反射 罩内’ LED安裝位置可採正常或倒裝方式。 胃本及= ϊ他特徵與優點將在參照底下描述、 圖示與專利申凊犯圍後更為清楚^。
圖1為本發明第一具體實祐在iiL^TT 班▲士 # 土游絲从灵苑例的LE D透視圖,其中L E D配 置在填充有鱗先質轉換樹脂的反 圖2為本發明第二具體實雜仓丨从^早^ c a a %七4献要々姑山苑例的LED透視圖,其中LED採 反向組態方式配置在填充右洗,_ 有&光質轉換樹脂的反射罩内。 508840 五、發明說明(3) 圖3為使用於本發明圖1及圖2中白色發光二極體的擴散 元件平面圖,該元件提供一擴散光源的發光裝置,因此適 合訊號與顯示方面的用途。 圖1為本發明第一具體實施例中發光二極體(LED) 1的透 祝圖,其中LED安裝在反射罩内。本發明的LED 1並不限於 任何種類的LED,只要能夠發射波長為485至51 5毫微米的 原基光即可,相當於藍綠色光◊如前所述,設計使用於交 通號誌的LED所產生的為藍綠色光。理想上這種LED很適合 用於本發明中,因為這種特殊用途設計的LED如果不符合 前述標準即被丟棄,本發明可利用這種LED來製造適合號 誌或顯示用途的白色光LED,但這種LED並不符合工業照明 標準。
LED 1包含一發光結構體2,由兩個n —GaN介層3與4,一 個 SQW 或 MQW GalnN 介層 5,一個 p-AlGaN 介層 6 及一個 p-GaN 介層7所組成。該發光結構體2另外還包括一個n_電極接合 座8,一個n_電極3,一個p-電極接合座丨丨及一個p—電極12 -電極3是由GaN所組成,電極接合座义與丨丨連結至電源 供應源後(圖t未顯示)可提供偏壓電流,使1]£1) i發射出 波長約為48 5至515毫微米的藍綠色原基光。 必須主忍的是,用來製造LED 1的材料並不限於圖i中所 討論的材料。熟習此項技藝者應瞭解LED i可採不同類型 的。如前所述,LED 1不限於任何特定種類的led 51 R者斜本採用社的LED裝置只要能夠發射出波長約為48 5至 515毫微米的藍綠色原基光即可。熟習此項技藝者應能瞭
第8頁 508840 五、發明說明(4) 解現存多種LED均適合於此目的。 1 ^ # ^ # # Μ〇2 ^ ^ ^ Μ f ^ (Αΐ2〇3> 或碳化矽(SiC)基板上取向附生製造。原基光可穿透這雨 種基板。在曰圖^所示第一具體實施例中,安裝在反射罩! 6 :的L E D 1疋/用一般稱為『正常』的安裝組態。反射罩 取好能填充磷光質轉換樹脂17,反射罩16也可填充環氧化 物或冷光染劑。在操作過程中,LED i被驅動發出原基發 射光’光束撞擊鱗光質轉換樹脂17,部分撞擊磷光質轉換 樹脂1 7的原基發射光被其轉換成紅色光,該紅色光的波長 約為6 0 0至6 2 0毫微米。未轉換部分的原基發射光則穿透樹 脂後,與紅色光混合成白色光。 圖2是本發明另個具體實施例中LED 1的透視圖,其t LED 1是採反向安装組態安裝在反射罩16内,所以LED 1的 各元件不會在此重覆描述。在反向安裝組態中,p-電極接 合座11經由一傳導元件(圖中未顯示)耦合至反射罩16的内 層表面,該表面疋由導電材料所構成。如同圖^所示的具 體實施例,反_射罩1 6最好能夠填充磷光質轉換樹脂丨7。此 外也可填充填光質轉換環氧化物或麟光質轉換染劑。基板 13為透明層:電極12則為反射層,因此發光結構體12產 生的原基發射光會被P-電極12反射,穿透基板13後進入樹 脂17。如同圖1所示的實施例中,基板13可由數種材料構 成,包括藍寶石與叙化石夕,原基發射光可穿透這兩種基板 。圊2實施例的P 一電極1 2為反射層,而圖1實施例中的p〜 極1 2為透明層。 ·
第9頁 五、發明說明(5) 必須注意的是,原基光可能為包含超— 先。同樣的,藉由原基光银路, 個波長以上的 所發射的光波也可能包人’ 先質轉換元件轉換 光結構體2所發射的原基舉例來說,發 個光譜帶。同樣地,樹基上可二 數個光譜而形成-個“帶。斤光也可能具有複 立 L / ^ 喊►二大> ί 曰* 帶的 /im 'rlr 0 '0 產生白色光。雖然此處於 幻各個波長混ο 與原理,但熟悉此項技士u = 本發明的概念 現象,可能源自或導致福怒個 紅處所討論的激發 帶。所以『光譜帶』一詞發2 ’或為-光譜 1 T此有迕夕個的光波帶。然而 一叫浐的 是光譜帶中強度最高的波長。 及長』 d和的 磷光質轉換樹脂17最好僅用 S:EU2+的磷光質家族中選好吏用從化子裇二為(Sr ’ Ca,Ba) 光質之一為摻入销的破^出/ H °ΛΛ家族選出的碟 放射峰值為61〇毫微米蔽式為,其 也可使用其他種類的磷光仁暂W此技/人士必能瞭解到 樹脂17 1 了-使用磷:二以製造磷光質轉換 也可使用其他類型的Κϊ;:脂匕物:, %買元件’包括碟光質轉換薄膜, 磷光質轉換基板,或者採用這些元件的各種組合方式。適 合此項用途的磷光質轉換薄膜與磷光質轉換基板揭示於 1999年9月27日提出申請的美國承前技藝專利申請案 09/407,231 ’09/407,228與09/405, 938 ,所有中請案皆讓 渡給本申請案的受讓人,並全部以引用的方式併入本文
第10頁 508840 五、發明說明(6) 中。 上述申請案也討論到前述磷光質轉換元件的運作方式, 熟習此項技藝者必可明瞭到本發明實施例中L E D使用不同 類型的磷光質轉換元件,用以轉換部分從L E D發射的藍綠 光成為紅色光,再與未轉換的原基藍綠光混合最後產生白 色光之方法。因此本發明所能採用各種磷光質轉換元件在 此就不再討論。 本發明的LED能夠產生適合訊號與顯示用途的白色光, 但一般而言並不適合照明之用。如果本發明一個或多個 L^D搭配光線擴散元件使用,例如圖3所示的擴散元件25, 這種2散元件的粗糙特質,亦即擴散元件25上的粗糙紋路 Yf使白色光線擴散,或散射或柔化。這個擴散元件2 5 可以是行人穿越號誌燈上的霜面擴散屏板。熟習此項技藝 人士,必。可瞭解到本發明之LED可搭配各種類型的擴散元件 (散光器)以提供各種用途。另外也必須注意的是,擴散元 件也可以2是用來蓋住LED的樹脂圓蓋的前緣表面。 必,注意的_是,本發明目前已討論過有關不同具體實施 jl ’ s在闡明本發明的概念與原理。但本發明並不只限於 =些具體實施例。凡熟習此項技藝人士皆能瞭解到此處討 了=具體實施例在本發明界定的範疇内仍具有多種變化的 T能。舉例來說,雖然本發明討論到由特定材質構成的 ^但餅熟習此項技藝人士必能瞭解到本發明不限於使用 ί〜,LED。此外,雖然本發明討論圖1與圖2所示的 射罩女裝組態,但熟習此項技藝人士也必能瞭解到本發
508840 五、發明說明(7) 明不限於這些安裝組態。同樣的,本發明也不限於使用内 文所討論的磷光質轉換元件,凡熟習此項技藝人士將會瞭 解到在不違背本發明的範疇下,前文討論過有關本發明各 項實施例的所有方面都有修改的可能性存在。 甕
第12頁 508840 圖式簡單說明
第13頁
Claims (1)
- 508840 六、申請專利範圍 1. 一種產生 體包括: 一發光裝 光,該原基發 的至 少一波長 一磷光質 的原 中一 經轉 元件 波長 波長2. 長波 一波 基發 由該 換直 所接 更長 之光 如申 長之 長。 如申 射光 磷光 接穿 收的 的光 束混 請專 光束 請專 極體裝置進一 光質 生的4. 光質 内填 該發 一反 轉換 白色 如申 轉換 充該 光裝 射罩 元件 光通 請專 元件 樹脂 置為 白光之發光二極體(LED)裝置,該發光二極 置,該發光裝置在被驅動時會產生原基發射 射光具有波長範圍在485至515毫微米(nm)内 ;以及 轉換元件,其係用於接收該發光裝置所產生 ,該原基發射光撞擊該磷光質轉換元件,其 質轉換元件所接收之第一原基發射光部份不 透該磷光質轉換元件;其中由該磷光質轉換 第二原基發射光部分被轉換成較原基發射光 ;而且其中該第一原基發射光部份與該較長 合而產生白色光。 利範圍第1項之發光二極體裝置,其中該較 包括波長範圍約在600至620毫微米内的至少 利範圍第1項之發光二極體裝置,該發光二 步包括: 、基板、發光裝置及配置在該反射罩内的磷 ;該反射罩具有一開口,可讓LED裝置所產 過。 利範圍第3項之發光二極體裝置,其中該磷 包括混合磷光質的樹脂,並且其中該反射罩 混合物,填滿程度為直到完全蓋住該基板與 止0第14頁 508840 六、申請專利範圍 5.如申請專利範圍第4項之發光二極體裝置,其中該LED 裝置是作為發訊號之用。 6 .如申請專利範圍第4項之發光二極體裝置,該裝置進 一步包括一作為顯示用途的擴散屏板。 7. 如申請專利範圍第4項之發光二極體裝置,其中該基 板可被原基發射光所穿透,並且其中該LED裝置採反向安 裝組態安裝在反射罩内。 8. 如申請專利範圍第4項之發光二極體裝置,其中該基 板無法被原基發射光所穿透,並且其中該LED裝置採正常 安裝組態安裝在反射罩内。 9. 如申請專利範圍第4項之發光二極體裝置,其中與樹 脂混合的填光質係選自於化學標示為(S r,C a,B a ) S : E u2+ 的磷光質家族。 1 0如申請專利範圍第9項之發光二極體裝置,其中該磷光 質為摻入銪的硫化鋰,其化學定義式為SrS : Eu2+。 11如申請專利範圍第3項之發光二極體裝置,其中該磷光 質轉換元件為混合磷環氧化物,該反射罩内填充該環氧化 物混合物,直、完全蓋住該基板與該發光裝置為止。 1 2 ·如申請專利範圍第1 1項之發光二極體裝置,其中該 LED裝置是作為發訊號之用。 13.如申請專利範圍第11項之發光二極體裝置,該裝置進 一步包括一用於顯示用途的擴散屏板。 1 4.如申請專利範圍第1 1項之發光二極體裝置,其中該原 基發射光能夠穿透該基板,並且其中該LED裝置是採反向第15頁 508840 六、申請專利範圍 安裝組態安裝在反射罩内。 1 5 .如申請專利範圍第1 1項之發光二極體裝置,其中該原 基發射光無法穿透該基板,並且其中該LED裝置是採正常 安裝組態安裝在反射罩内。 1 6 .如申請專利範圍第3項之發光二極體裝置,其中該磷 光質轉換元件為有機冷光染劑,該反射罩填充入該染劑, 直到完全覆蓋該基板與該發光結構體為止。 1 7.如申請專利範圍第1 6項之發光二極體裝置,其中該 LED裝置是作為發訊號之用。 1 8.如申請專利範圍第1 6項之發光二極體裝置,其中該 LED裝置可搭配使用擴散屏板以提供顯示用途。 1 9 .如申請專利範圍第1 6項之發光二極體裝置,其中該原 基發射光可穿透該基板,並且其中該LED裝置採反向安裝 組態安裝在反射罩内。 2 0.如申請專利範圍第1 6項之發光二極體裝置,其中該原 基發射光無法穿透該基板,並且其中該LED裝置採正常安 裝組態安裝在反射罩内。 2 1 .如申請專'利範圍第1項之發光二極體裝置,其中該磷 光質轉換元件為一磷光質轉換薄膜。 2 2.如申請專利範圍第1項之發光二極體裝置,其中該磷 光質轉換元件為一磷光質轉換基板,發光裝置則配置在該 填光質轉換基板上。
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-
2000
- 2000-04-24 US US09/556,770 patent/US6603258B1/en not_active Expired - Lifetime
-
2001
- 2001-04-23 EP EP01201458A patent/EP1150361A1/en not_active Withdrawn
- 2001-04-23 KR KR1020010021704A patent/KR100794866B1/ko active IP Right Grant
- 2001-04-24 JP JP2001125347A patent/JP2002016295A/ja not_active Abandoned
- 2001-06-14 TW TW090114416A patent/TW508840B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7294865B2 (en) | 2004-12-17 | 2007-11-13 | Genesis Photonics Inc. | Light emitting device and the use thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20010099729A (ko) | 2001-11-09 |
EP1150361A1 (en) | 2001-10-31 |
US6603258B1 (en) | 2003-08-05 |
KR100794866B1 (ko) | 2008-01-14 |
JP2002016295A (ja) | 2002-01-18 |
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