TW499823B - Printed circuit board and its manufacturing method - Google Patents

Printed circuit board and its manufacturing method Download PDF

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Publication number
TW499823B
TW499823B TW089117963A TW89117963A TW499823B TW 499823 B TW499823 B TW 499823B TW 089117963 A TW089117963 A TW 089117963A TW 89117963 A TW89117963 A TW 89117963A TW 499823 B TW499823 B TW 499823B
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TW
Taiwan
Prior art keywords
resin
capacitor
printed circuit
circuit board
substrate
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Application number
TW089117963A
Other languages
Chinese (zh)
Inventor
Yasushi Inagaki
Motoo Asai
Touto O
Hideo Yahashi
Seiji Shirai
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Ibiden Co Ltd
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Publication of TW499823B publication Critical patent/TW499823B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Abstract

By disposing chip capacitor 20 in the printed circuit board 10, the separation distance between IC chip 90 and the chip capacitor 20 is reduced such that it is capable of decreasing the circuit inductance. Thus, by laminating the first resin board 30a, the second resin board 20b and the third resin board 30c to form the printed circuit board, a core board 30 with adequate strength can be obtained.

Description

499823 [技術領域] · 本發明係有關於載置I c晶片等的電子零件之印刷基板 以及其製造方法,特別是有關於内藏電容器之印刷電^板 及其製造方法。 [習知技術] 目前’組裝基板用的印刷電路板,為了圓滑供給ic晶 片電力等目的,而在表面安裝晶片電容器。 03 由於從晶片電容器到I c晶片的配線的電抗 (reactance)是依頻率而定,而隨著1(:晶片的驅動頻率增 加,即使在表面安裝晶片電容器,亦無法得到充分效果9。 因此,本發明人在特願平n—24831 1號提出在核心^板形 成凹部,而在凹部收容晶片電容器之技術。此外,在基/板 埋入電容器之技術有特開平6_326472號、特開平7 —263"619 號、特開平1 0-256429號、特開平1 1 —45955號、特開平 1 1 - 1 26978號、特開平^—3^868號等。 幵 特開平6-326472號揭露在玻璃環氧組成之樹脂基板 f,埋入電容器之技術。藉由該構造,可減低電源雜訊 (n〇1Se ),且不需要安裝晶片電容器之空間(s^a),可 基板。ί:特開平7_26361 9號揭露在陶竟、 層及接二之ΐ,電容器之技術。藉此構造,以接續電源 曰、^ 3,縮短配線長,而減低配線的减抗。 法充特開平"26472號、特開平7,3619號無 2 = ;:: C晶片到電容器的距離,在1C晶片的高頻率 " r低現在必要之感抗。特別是在樹脂製造的多499823 [Technical Field] · The present invention relates to a printed circuit board on which electronic components such as IC chips are mounted and a method for manufacturing the same, and more particularly, to a printed wiring board with a built-in capacitor and a method for manufacturing the same. [Conventional Technology] At present, a printed circuit board for assembling a substrate has a chip capacitor mounted on its surface for the purpose of smoothly supplying IC chip power and the like. 03 Because the reactance of the wiring from the chip capacitor to the IC chip is frequency dependent, as 1 (: the driving frequency of the chip increases, even if a chip capacitor is mounted on the surface, a sufficient effect cannot be obtained. 9 Therefore, The present inventor proposed a technique for forming a recess in a core plate and receiving a chip capacitor in the recess in No. 2424 No. 1. In addition, the techniques for embedding capacitors in a substrate / board include No. 6_326472 and No. 7- 263 " 619, JP-A-1 0-256429, JP-A-1 1-45955, JP-A-1 1-1 26978, JP-A-1 ^ -3 ^ 868, etc. 幵 JP-A-6-326472 was exposed on the glass The resin substrate f made of epoxy is a technology for embedding capacitors. With this structure, power supply noise (n01Se) can be reduced, and there is no need to install a chip capacitor space (s ^ a), and the substrate can be used. Kaiping No. 7_26361 No. 9 reveals the technology of capacitors in ceramics, layers, and terminals. With this structure, the power supply is connected to shorten the wiring length and reduce the impedance of the wiring. Kaikai " 26472 No., No. 7,3619, No. 2 =;: C crystal Distance capacitor 1C of the wafer at high frequency ". R now low inductance particularly necessary in the manufacture of multi resin

層印刷電路板,陶莞 以及層間樹脂絕緣層 端子與介層窗口(via 間樹脂絕緣層之間剝 無法達到長期間的高 組成之電容器與樹 的熱膨服率不同, hole)之間斷線, 離’在層間樹脂絕 信賴性。Layer printed circuit board, ceramics, and interlayer resin insulation layer terminals and interlayer windows , Li's absolute reliability in the interlayer resin.

脂組成之核#心基板 因此晶片電容器的 在晶片電容器與層 緣層發生裂痕,而 面,特願平1 1 —24831 1號的發明,在電容器的 办0又立置纟交動時,無法正確地接續電容器的端子與介層 自’恐怕無法從電容器供給電力至1C晶片。 —抑本發明正是為了解決上述問題,其目的為提供内藏電 谷裔、且接續信賴性高的印刷電路板,及印刷電路板的製 造方法。 為了達成上述目的,申請專利範圍第1項的印刷電路 板’是在收容電容器之核心基板上,交互積層層間樹脂絕 緣層與導體電路,其中前述收容電容器之核心基板是經由 i接著板將第1樹脂基板、與具有收容電容器之開口的第2樹 脂基板與第3樹脂基板積層而成。 此外,申請專利範圍第1 6項之印刷電路板之製造方 法’包括至少以下(a)〜(d)之步驟: (a) 在第1樹脂基板上形成導體襯墊(pad)部; (b) 在前述第1樹脂基板的導體襯墊部上經由導電性 1接著劑而接續電容器; i (c) 將第3樹脂基板與具有收容前述電容器之開口的 第2樹脂基板與前述第1樹脂基板,將前述第1樹脂基板的 前述電容器收容於前述第2樹脂基板的前述開口中,且將 1 ! _ 1 1 1 1 1 1 1 Ϊ 2160-3403-?!.Ptd 第6頁 499823 I五、發明說明(3) « 第3樹脂基板上塞入前述苐2樹脂基板的前述開口之狀態, 經由接著板而積層;以及 (d )將前述第1樹脂基板、前述第2樹脂基板與前述第 3樹脂基板加熱加壓而形成核心基板。 | 申請專利範圍第1項之印刷電路板以及申請專利範圍 第1 6項之印刷電路板的製造方法,可在核心基板内收容電 容器’因為可縮短IC晶片與電容器的距離,因此可減低印 刷電路板的迴路感抗。此外,因為積層樹脂基板而可在核 心基板得到充分強度。並且,在核心基板的兩面配設第1 樹脂基板、第3樹脂基板而平滑地構成核心基板,可在核 |心基板之上適當地形成層間樹脂絕緣層以及導體電路,可 減低印刷電路板的不良品發生率。 在核心基板上設置層間樹脂絕緣層,而在該層間樹脂 絕緣層施予介層窗口或貫穿孔,以形成導電層為導體電路 之增疊(bui Id ιιρ)方法形成之電路。亦可使用半加層 (semi additive)方法、全加層(fuU additive)方法之任 ! 一者。 空隙杈佳是以樹脂填充。藉由在電容器、核心基板之 間沒有空隙’内藏之電容器動作變小,即使發生以電容器 為起點之應力,可藉由該填充之樹脂使其緩和。此外,該 树月曰亦具有減低電容器與核心基板的接著以及偏移 (migration)的效果。 I 、 申請專利範圍第2項,因為是前述接著板是將心材含 浸於熱硬化性樹脂中,因此可得到具有高強度的核心基脂 组合 的 核 # Heart substrate Therefore, the chip capacitor has cracks in the chip capacitor and the edge layer, and the surface, the invention of No. 1-2424831 No. 1 is not available when the capacitor is turned on and placed vertically. Correctly connecting the capacitor's terminals and interposer will not supply power from the capacitor to the 1C chip. In order to solve the above problems, the present invention aims to provide a printed circuit board with built-in electronics and high connection reliability, and a method for manufacturing the printed circuit board. In order to achieve the above-mentioned purpose, the printed circuit board of the first scope of the application for a patent is an interlayer resin insulation layer and a conductor circuit which are laminated on a core substrate that houses a capacitor. The core substrate that houses the capacitor is A resin substrate, a second resin substrate having a capacitor receiving opening, and a third resin substrate are laminated. In addition, the method of manufacturing a printed circuit board according to item 16 of the patent application includes at least the following steps (a) to (d): (a) forming a conductor pad portion on a first resin substrate; (b) ) A capacitor is connected to the conductor pad portion of the first resin substrate via a conductive 1 adhesive; i (c) a third resin substrate and a second resin substrate having an opening for accommodating the capacitor and the first resin substrate , The capacitor of the first resin substrate is housed in the opening of the second resin substrate, and 1! _ 1 1 1 1 1 1 1 1 Ϊ 2160-3403-?!. Ptd page 6 499823 I Description of the invention (3) «The third resin substrate is laminated with the opening of the 苐 2 resin substrate, and is laminated through a bonding plate; and (d) the first resin substrate, the second resin substrate, and the third resin substrate are laminated. The resin substrate is heated and pressurized to form a core substrate. | The printed circuit board with the scope of patent application No. 1 and the printed circuit board with the scope of patent application No. 16 can manufacture capacitors in the core substrate. 'Because the distance between the IC chip and the capacitor can be shortened, the printed circuit can be reduced. The loop inductance of the board. In addition, since the resin substrate is laminated, sufficient strength can be obtained on the core substrate. In addition, the first resin substrate and the third resin substrate are arranged on both sides of the core substrate to form a core substrate smoothly. An interlayer resin insulation layer and a conductor circuit can be appropriately formed on the core substrate, and the printed circuit board can be reduced. Incidence of defective products. An interlayer resin insulating layer is provided on the core substrate, and an interlayer window or a through-hole is applied to the interlayer resin insulating layer to form a circuit formed by a buid method in which a conductive layer is a conductor circuit. You can use either the semi additive method or the fuU additive method! The gap is preferably filled with resin. Since there is no gap between the capacitor and the core substrate, the operation of the capacitor is reduced, and even if stress starting from the capacitor occurs, it can be alleviated by the filled resin. In addition, this tree moon also has the effect of reducing the adhesion and migration of the capacitor and the core substrate. I. The second item in the scope of patent application is because the aforementioned bonding sheet is impregnated with a core material in a thermosetting resin, so a core base with high strength can be obtained.

499823 五、發明說明⑷ β 板。 申請專利範圍第3項, 板是將心材含浸於樹月旨中 板。 ’ 申請專利範圍第4項 因為前述第1、第2、第3樹脂基 ’可得到具有高強度的核心基 容器,因此可能電衮因為核心基板内收容複數個電 •請專利範化。…匕 導體電路,因此可提言其因為疋在第2樹脂基板上形成有 絕緣層的層數。 门土板的配線密度’並減少層間樹脂 申請專利範圍第6項,e499823 V. Description of invention ⑷ β plate. The scope of the patent application is No. 3. The board is a board in which the heartwood is impregnated in the tree moon purpose. Term 4 of the scope of patent application Because the above-mentioned first, second, and third resin-based resins can be obtained with a high-strength core-based container, it is possible that electricity may be contained in the core substrate. • Please normalize the patent. ... It can be said that the number of layers of the insulating layer is formed on the second resin substrate due to the conductor circuit. Door soil board ’s wiring density ’and reduce the interlayer resin.

電容器上加配設電容器、。疋在珂述收容於印刷電路板的 器,因此縮短1C晶片;番f ί在印刷電路板内收容電容 瞬間地供給雷源,另二方各器的距離,減低迴路感抗,可 配設電容器,因此可安丄由於在印刷電路板的表面亦 晶片大電力。 、大容量的電容器,而容易供給1C 申請專利範圍第7項, 容量是在内層的晶片電容哭因為表面的晶片電容器的靜電 率區域電源供給不會不足t電容量以上,所以在高頻 作。 不足’可確保所期望的1C晶片的動 申請專利範圍第8項,θ &主二A - 是在内層的晶片電容器之感口抗為以表上面的:曰、片電容一 源供給不會不足,可續伴二 所w在南頻率區域電 百卜疋 碍保所期望的IC晶片的翻从 申請專利範圍第9、1 0項 的動作。 性接續开彡屮A屈时 ' 電鑛之介層窗口而得恭 Γ玍搔,至形成金屬膜之晶 而侍电 包谷抑的電極。在此,晶片電 、發明說明(5) =二的電極是在金屬化(metallize)組成之表面的S凸, =是因金屬膜而表面平滑,即使實施加熱循環試驗,亦不 |為在電極和接著板等發生斷線。 電谷為之電極的金屬膜,較佳為配設銅、鎳、貴金屬 之任一金屬。因為内藏之電容器上錫和亞鉛等層容易引發 /、 S ® 之接績部分的偏移。因此亦可防止偏移的發 | 生 ° t x I ^ 亦可在晶片電容蒸的表面施予粗化處理。藉A capacitor is added to the capacitor.疋 The device contained in the printed circuit board is shortened, so the chip is shortened by 1C; the capacitor is stored in the printed circuit board to supply the lightning source instantaneously, and the distance between the other two devices is to reduce the inductance of the circuit. A capacitor can be equipped. Therefore, it can be installed because of the large chip power on the surface of the printed circuit board. And large-capacity capacitors, and it is easy to supply 1C. The scope of the patent application is the seventh. The capacity is the chip capacitance of the inner layer. Because the surface area of the chip capacitor's electrostatic power supply will not be less than t capacitance, it works at high frequency. "Insufficient" can ensure that the desired range of patent application for the 1C chip is No. 8, θ & Main A-is the inductive reactance of the chip capacitor in the inner layer. Insufficient, can continue to be accompanied by the two W in the southern frequency region of the electric circuit to prevent the desired IC chip from the application of the scope of the patent application of the 9th and 10th. The connection between the openings and the openings of the interlayer window of the electric ore can be respected to the electrode that forms the crystals of the metal film and serves the electricity. Here, the description of the chip and the invention (5) = the two electrodes are S convex on the surface of metallize, = the surface is smooth due to the metal film, even if the heating cycle test is performed, it is And the board and the like broke. The metal film for which the valley is an electrode is preferably provided with any one of copper, nickel, and noble metal. This is because the layers of tin and lead on the built-in capacitors are likely to cause shifts in the results of /, S ®. Therefore, the occurrence of offset can also be prevented. ° t x I ^ can also be roughened on the surface of the chip capacitor. borrow

此5 y增加陶瓷組成之晶片電容器與樹脂組成之接續層、 11樹脂絕緣層的密著性,即使實施加熱循環試驗,亦不 會發生在界面的接著層、層間樹脂絕緣層的剝離。 ^ 申請專利範圍第11項,從晶片電容器的電極之披覆層 =出至少一部份而收容於印刷電路板,而得電性接續於從 前述披覆層露出之電極。此時,從披覆層露出之金屬較佳 1以銅為主成份。因為可以減低接續抵抗。 ” 申請專利範圍第1 2項,因為是使用在外緣之内側形成 電極之晶片電容器,即使經由介層窗口而導通,外部電極 增加’由於對準(alignment)的容許範圍增加,因此合 接續不良。 曰 曰 甲請專利範圍第1 3項,由於使用以矩陣狀形成電極之 晶片電容器5因此容易在核心基板收容大型的晶片電容 曝 器。因此由於靜電容量增加,可解決電性的問題。並且, 即使經過各種熱經歷,亦難以發生印刷電路板的彎曲。 申請專利範圍第1 4項亦可使用多數個取用之晶片電容This 5 y increases the adhesiveness of the ceramic capacitor chip capacitor and resin connection layer and 11 resin insulation layer. Even if the heating cycle test is performed, the bonding layer at the interface and the interlayer resin insulation layer will not peel off. ^ The scope of application for patent No. 11 is to coat at least a part of the electrode of the chip capacitor and store it in a printed circuit board, and obtain electrical connection to the electrode exposed from the aforementioned coating layer. At this time, the metal exposed from the cladding layer is preferably composed mainly of copper. Because it can reduce the resistance. "Applicant No. 12 of the scope of patent application is because a chip capacitor is used in which an electrode is formed on the inner side of the outer edge, and even if it is turned on through the interlayer window, the external electrode is increased." Due to the increase in the allowable range of alignment, the connection is poor. Article 13 of the scope of patent application, because wafer capacitors 5 with electrodes formed in a matrix are used, so it is easy to store large wafer capacitors in the core substrate. Therefore, due to the increase in electrostatic capacity, electrical problems can be solved. Even after various thermal experiences, it is difficult to bend the printed circuit board. Item 14 of the scope of patent application can also use a large number of chip capacitors.

499823 五、發明說明(6) —--499823 V. Description of the invention (6) ---

器複數個連結。猎此,可適宜調整靜電容量,ic晶片可適 當地動作。 L 申請專利範圍第1 5項,絕緣性接著劑的熱膨脹率比收 |容層的熱膨賬率小,也就是設定在陶瓷組成之電容器的附 近。因此在熱循環試驗,即使發生核心基板與電容器之間 熱膨脹率差而起之内應力,在核心基板亦難以產生斷裂、 剝離,可達成高信賴性。 乂Multiple links. In this case, the electrostatic capacity can be adjusted appropriately, and the IC chip can operate properly. L No. 15 of the scope of patent application, the thermal expansion rate of the insulating adhesive is smaller than the thermal expansion rate of the receiving layer, that is, set near the capacitor made of ceramic. Therefore, in the thermal cycle test, even if internal stress caused by the difference in thermal expansion coefficient between the core substrate and the capacitor occurs, it is difficult for the core substrate to break and peel, and high reliability can be achieved. Qe

為了達成上述目的,申請專利範圍第丨7項之發明,是 ;在核心基板上積層有樹脂絕緣層與導體電路的印刷電路 j板,其中前述核心基板是貼合形成導體電路之複數個樹脂 基板而成,在七述核心基板内收容有電容器。 申請專利範圍第1 8項的發明,是在核心基板上積層有 樹脂絕緣層與導體電路的印刷電路板,其中前述核心基板 J貼合形成導體電路之複數個樹脂基板而成,在前述核心 基板内形成之凹部中收容有電容器。 前=專1範圍第丨7、1 8項,可在核心基板内收容電容器, ^ γ縮短I C晶片與電谷器的距離,因此可減低印刷電路 感抗。此外,因為以複數枚形成導體電路之樹脂 而形成核心基板,可增加核心基板的配線密度, 而可減少層間樹脂絕緣層的層數。 ί ^ # a 1 =基板上設置層間樹脂絕緣層,而在該層間樹 =二i =卞介層窗口或貫穿孔,以形成導電層為導體電 曰二U1 Id up)方法形成之電路。亦可使用半加層方 法、全加層方法之任一者。In order to achieve the above-mentioned object, the invention of the seventh patent scope is: a printed circuit board with a resin insulating layer and a conductor circuit laminated on a core substrate, wherein the core substrate is a plurality of resin substrates bonded together to form a conductor circuit As a result, a capacitor is housed in the core substrate of the seventh description. The invention of claim 18 in the scope of patent application is a printed circuit board in which a resin insulating layer and a conductor circuit are laminated on a core substrate. The core substrate J is formed by bonding a plurality of resin substrates to form a conductor circuit. A capacitor is housed in a recess formed therein. Front = Items 1 and 7 and 18 in the special range. Capacitors can be stored in the core substrate. ^ Γ shortens the distance between the IC chip and the valley device, thus reducing the inductive reactance of the printed circuit. In addition, since the core substrate is formed by a plurality of resins forming a conductor circuit, the wiring density of the core substrate can be increased, and the number of interlayer resin insulating layers can be reduced. ί ^ # a 1 = An interlayer resin insulating layer is provided on the substrate, and an interlayer tree = two i = interlayer windows or through holes to form a conductive layer as a conductor (U1 Id up). Either a semi-additive method or a full-additive method may be used.

第10頁 499823 五、發明說明(7) 空隙較佳是以樹脂填充。藉由在電容器、核心"基板之 間沒有空隙,内藏之電容器動作變小,即使發生以電容器 為起點之應力,可藉由該填充之樹脂使其缓和。此外,該 樹月日亦具有減低電谷裔與核心基板的接著以及偏移 (migration)的效果。 申請專利範圍第1 9項’因為是複數個樹脂基板經由接 著板而貼合,因此可強固地接著。 申請專利範圍第2 0項,因為接著板是將心材含浸於熱 硬化性樹脂中,因此核心基板具有高的強度。 申请專利範圍第2 1項’為樹脂基板是將心材含浸於樹 脂中,因此核心基板具有高的強度。 申請專利範圍第22項’因為在核心基板内收容 電容器,因此可高集積化電容器。 申請專利範圍第23項,是在前述收容於印刷電 電容器上加配設電容器。因為在印刷電路板内收容,的 器,因此縮短1C晶片與電容器的距離,減低迴路二奋 二2供給電源’ 3 一方面,由於在印刷電路板: 配设電容器’目此可安裝大容量的電容 =面亦Page 10 499823 V. Description of the invention (7) The gap is preferably filled with resin. Since there is no gap between the capacitor and the core " substrate, the operation of the built-in capacitor becomes small, and even if stress starting from the capacitor occurs, the filled resin can be used to relax it. In addition, the tree moon day also has the effect of reducing the adhesion and migration of the power valley and the core substrate. Item 19 in the scope of the patent application is because a plurality of resin substrates are bonded together via an adhesive plate, and thus can be firmly adhered. The scope of application for patent No. 20 is that the core substrate has a high strength because the core material is impregnated with a thermosetting resin. The 21st item in the scope of the patent application is that the resin substrate is impregnated with resin in the core material, so the core substrate has high strength. Item 22 of the scope of patent application 'Since the capacitor is housed in the core substrate, the capacitor can be highly integrated. Item 23 of the scope of patent application is to add a capacitor to the aforementioned printed electric capacitor. Because the device is housed in the printed circuit board, the distance between the 1C chip and the capacitor is shortened, and the circuit power supply is reduced. 2 On the one hand, because the printed circuit board is equipped with a capacitor, a large-capacity Capacitance = surface

晶片大電力。 #易供給IC 申請專利範圍第24項,因為表面的晶片電容 容量是在内層的晶片電容器之靜電容量以上,%的靜電 :區域電源供給不會不足,可確保所期望的=高頻 作。 θ的動 申請專利範圍第25項1因為表面的晶片電容 11的感抗Chips have high power. # 易 Supply IC applies for the scope of patent application No. 24, because the chip capacitance on the surface is greater than the capacitance of the chip capacitor on the inner layer,% static electricity: The regional power supply will not be insufficient, which can ensure the desired = high frequency operation. The motion of θ No. 25 in the scope of patent application 1 Because of the surface chip capacitance 11 Inductive reactance

是在内 源供給 中 得電性 容器識 平滑, 發生斷 電 之任 與介層 生。 2晶片電容:之感抗以上,所 不足’可確保所期望的K晶片的動作域電 :月專利範圍第26、27項,以電鍍而成之二 2至形成金屬膜之電容器的㈣ ::片口取 金屬化組成之表面上的凹凸 阳片電 :使實施加熱循環試驗’亦不會在電極和;以 f器之電極的金屬膜5較佳為配設銅、鎳、 f屬。因為内藏之電容器上錫和亞鉛等層容易^屬 由口之接續部分的偏移。因此亦可防止偏移發 、卜亦可在晶片電容器的表面施予粗化處理。藉 ^Γ增加陶瓷組成之晶片電容器與樹脂組成之接續層、 二K对知絕緣層的密著性,即使實施加熱循環試驗,亦不 “發生在界面的接著層、層間樹脂絕緣層的剝離。 ^申请專利範圍第2 8項,從晶片電容器的電極之彼覆層 路出至少一部份而收容於印刷電路板,而得電性接續於從 前述披覆層露出之電極。此時,從披覆層露出之金屬較佳 以銅為主成份。因為可以減低接續抵抗。 申請專利範圍第2 9項,因為是使用在外緣之内側形成 電極之晶片電容器,即使經由介層窗口而導通,外部電極It is because the power supply in the internal supply is smooth, the power failure occurs and the interlayer is generated. 2 Chip capacitors: the above-mentioned inductance is insufficient, which can ensure the desired operating range of the K-chip: the 26th and 27th of the patent scope of the month, and the capacitor 2 formed by electroplating 2 to the capacitor forming a metal film :: The film mouth is provided with a concave-convex male sheet on the surface of the metallized composition: the heating cycle test will not be performed on the electrode and the metal film 5 of the electrode of the device is preferably provided with copper, nickel, and f. This is because the layers of tin and lead on the built-in capacitor are easy to shift due to the continuation of the mouth. Therefore, it is also possible to prevent misalignment and to roughen the surface of the chip capacitor. By using ^ Γ to increase the ceramic capacitor's chip capacitor and resin composition's connection layer, and the K's adhesion to the insulating layer, even if the heating cycle test is performed, it does not "peel off the bonding layer at the interface or the interlayer resin insulating layer. ^ No. 28 of the scope of the patent application, at least a part of the other coating layer of the electrode of the chip capacitor is routed to the printed circuit board and electrically connected to the electrode exposed from the aforementioned coating layer. At this time, from The metal exposed by the coating layer is preferably copper as the main component. Because it can reduce the connection resistance. The scope of application for patents is 29, because it is a chip capacitor that forms an electrode on the inner side of the outer edge. electrode

增加,由於對準的容許範圍增加,因此不會接續不良。 申請專利範圍第3 0項,由於使用以矩陣狀形成電極之 !晶片電容器,因此容易在核心基板收容大型的晶片電容If it increases, the allowable range of alignment will increase, so there will be no splicing. No. 30 of the scope of patent application, because chip capacitors are used to form electrodes in a matrix, so it is easy to store large chip capacitors on the core substrate.

2160-3403-Pf-pid 第12頁 499823 五、發明說明(9) 器。因此由於靜電容量增加,可解決電性的問題。•並且, 即使經過各種熱經歷,亦難以發生印刷電路板的彎、曲。 I 申請專利範圍第31項亦可使甩多數個取用之晶片電容 !器複數個連結。藉此,可適宜調整靜電容量,ic晶片可適 當地動作。 申請專利範圍第32項,絕緣性接著劑的熱膨脹率比收 谷層的熱膨張率小’也就是設定在陶竟組成之電容器的附 近。因此在熱循環試驗,即使發生核心基板與電容器之間 熱膨脹率差而起之内應力,在核心基板亦難以產生斷裂、 剝離,可達成高信賴性。 申請專利範圍第3 3項之印刷電路板的製造方法,至少 包括以下(a)〜(e)之步驟: (a) 在複數個樹脂基板上形成導體電路; I (b)經由接著板而積層複數個前述樹脂基板; i (c)將前述樹脂基板同士經由前述接著板而接著成核 心基板; (d) 在述核心基板上形成凹部;以及 (e) 將電容器收容於前述凹部。 申請專利範圍第34項之印刷電路板的製造方法,至少 包括下列(a)〜(e)之步驟: ! (a)形成具備通孔,在表面配設導體電路之樹脂基 (b) 形成不具備通孔,在表面配設導體電路之樹脂基 板,2160-3403-Pf-pid Page 12 499823 5. Description of the invention (9). Therefore, as the electrostatic capacity increases, the electrical problem can be solved. • Also, it is difficult to bend or bend the printed circuit board even after various thermal experiences. The 31st scope of the patent application can also connect a plurality of chip capacitors to be used! Thereby, the electrostatic capacity can be adjusted appropriately, and the IC chip can operate appropriately. In the scope of application for patent No. 32, the thermal expansion coefficient of the insulating adhesive is smaller than the thermal expansion coefficient of the valley layer, that is, it is set near the capacitor composed of ceramics. Therefore, in the thermal cycle test, even if internal stress caused by the difference in thermal expansion coefficient between the core substrate and the capacitor occurs, it is difficult for the core substrate to break and peel, and high reliability can be achieved. The method for manufacturing a printed circuit board according to item 33 of the patent application includes at least the following steps (a) to (e): (a) forming a conductor circuit on a plurality of resin substrates; I (b) laminating through a bonding board A plurality of the aforementioned resin substrates; i (c) connecting the aforementioned resin substrate to a core substrate via the aforementioned bonding board; (d) forming a recess on the core substrate; and (e) accommodating a capacitor in the recess. The method for manufacturing a printed circuit board under the scope of patent application No. 34 includes at least the following steps (a) to (e):! (A) Forming a resin base with a through hole and a conductor circuit on the surface (b) A resin substrate with a through hole and a conductor circuit on the surface,

2160-3403-Fi -?td 第13頁 4^9823 五、發明說明αο) ----—— (〇將前述具備通孔之樹脂基板與前述不具備•通孔之 樹脂基板經由接著板而積層; | (d)將前述樹脂基板經由前述接著板而接著成核心基 I板;以及 丨 (e)將電容器收容於前述通孔。2160-3403-Fi-? Td Page 13 4 ^ 9823 V. Description of the invention αο) -------- (〇 The resin substrate with through holes and the resin substrate without through holes are passed through the bonding board. (D) layering the resin substrate into a core-based I-plate via the bonding plate; and (e) accommodating the capacitor in the through-hole.

…中請㈣範圍第33以及34項’可在核心基板内收容電 容器,因為可縮短Ic晶片與電容器的距離,因此可減低印 刷^板的迴路感抗。此外,因為以複數牧形成導體電路 $樹脂基板積層而形成核心基板,可增加核心基板的配線 密度,而可減少層間樹脂絕緣層的層數。 ^ 了達成上述目的,申請專利範圍第35項的印刷電路 板,疋在收冬電容器之核心基板上,交互積層層間樹脂絕 緣層與導體電路,其中前述收容電容器之核心基板是經由 接著板將第1樹脂基板、肖具有收容電容器之開口的第2樹 i脂基板與第3樹脂基板而積層者,在前述核心基板的兩 I面,配設有與前述電容器之端子接續之介層窗口。…, Please refer to items 33 and 34 in the scope ”Capacitors can be housed in the core substrate, because the distance between the IC chip and the capacitor can be shortened, and the inductance of the printed circuit board can be reduced. In addition, since the core substrate is formed by laminating a plurality of conductor circuits and a resin substrate, the wiring density of the core substrate can be increased, and the number of interlayer resin insulating layers can be reduced. ^ In order to achieve the above-mentioned purpose, the printed circuit board with the scope of patent application No. 35 is applied on the core substrate of the winter capacitor, and the interlayer resin insulation layer and the conductor circuit are alternately laminated, wherein the core substrate for housing the capacitor is A resin substrate, a second resin substrate having a opening for accommodating a capacitor, and a third resin substrate are laminated, and on both sides of the core substrate, interposer windows connected to the terminals of the capacitor are arranged.

申請專利範圍第35項的印刷電路板,可在核心基板内 收谷龟谷二因為可縮短Ϊ C晶片與電容器的距離,因此可 減低印刷電路板的迴路感抗。此外,因為積層樹脂基板而 可在核心基板得到充分強度。並且,在核心基板的兩面配 設第1樹脂基板、第3樹脂基板而平滑地構成核心基板,可 |在核心基板之上適當地形成層間樹脂絕緣層以及導體電 |路,可減低印刷電路板的不良品發生率。此外,因為在核 心基板的兩面設置介層窗口,因此可以最短的距離接續iCThe printed circuit board with the scope of patent application No. 35 can be contained in the core substrate. Since the distance between the Ϊ C chip and the capacitor can be shortened, the circuit inductance of the printed circuit board can be reduced. In addition, since the resin substrate is laminated, sufficient strength can be obtained on the core substrate. In addition, the first resin substrate and the third resin substrate are arranged on both sides of the core substrate to form a core substrate smoothly. An interlayer resin insulating layer and a conductor circuit can be appropriately formed on the core substrate, and the printed circuit board can be reduced. Incidence of defective products. In addition, since interposer windows are provided on both sides of the core substrate, iC can be connected in the shortest distance.

21 60-3403-Fi-pid 第14頁 499823 I五、發明說明(11) 晶片與晶片電容器’可從外部接續基板供給瞬間的·大電力 到I C晶片。 在核心基板上設置層間樹脂絕緣層,而在該層間樹脂 絕緣層施予介層窗口或貫穿孔,以形成導電層為導體電路 |之增疊(bu 1 i d up)方法形成之電路。亦可使用半加層方 j 法、全加層方法之任' —者。 此外’藉由配設接續用配線,在電容器的下部亦可施 予配線。因此可增加配線的自由度,而能高密度化、小型 化。 | 空隙較佳是以樹脂填充。籍由在電容器、核心基板之| 丨丨間沒有空隙,内藏之電容器動作變小,即使發生以電容器I !,起點之應力,可藉由該填充之樹脂使其緩和。此外,該i 樹脂亦具有減低電容器與核心基板的接著以及偏移 (migration)的效果。 申請專利範圍第36項,因為接著板是將心材含浸於熱 硬化性樹脂中,因此核心基板具有高的強度。 曰申請專利範圍第37項,因為第}、第2、第3樹脂基板 是將心材含浸於樹脂中,因此核心基板具有高的強度。具 體例如可使用含浸玻璃環氧、玻璃酚等的補強材料。 申請專利範圍第38項,因為是在核心基板内收容複數 個電容器,因此可高集積化電容器。因此可確保 丨電容量。 ! ! 申請專利範圍第39項所述,因為是在第2樹脂基板上 ξ形成導體電路,可提高基板的配線密度,並減少層間樹脂 499823 五、發明說明(12) 絕緣層的層數。 ☆請專利範圍 電容器上加配設電 器,因此縮短IC晶 瞬間地供給電源, 配設電容器,因此 晶片大電力。 申請專利範圍 容量是在内層的晶 率區域電源供給不 作。 申請專利範圍 是在内層的晶片電 源供給不會不足, 申請專利範圍 性接續至形成金屬 容器的電極是在金 而表面平滑,即使 著板等發生斷線。 電容器之電極 之任一金屬。因為 與介層窗口之接續 生0 第40項,是在前述收 f器。因為在印刷電路板内的 器Γ離,減低迴路=谷可 可安裝大容量的雷宠哭 极的表面亦21 60-3403-Fi-pid Page 14 499823 I. Description of the Invention (11) Chip and Chip Capacitor ’can supply instantaneous high-power to IC chip from external connection substrate. An interlayer resin insulating layer is provided on the core substrate, and an interlayer window or a through hole is applied to the interlayer resin insulating layer to form a conductive layer which is a circuit formed by a bu 1 i d up method of a conductive circuit. You can also use either the semi-additive method or the full-additive method. In addition, by providing connection wiring, wiring can be applied to the lower portion of the capacitor. Therefore, the degree of freedom of wiring can be increased, and the density and size can be reduced. | The gap is preferably filled with resin. Since there is no gap between the capacitor and the core substrate, the built-in capacitor operation becomes smaller. Even if the capacitor I !, the stress at the starting point, can be relieved by the filled resin. In addition, this i-resin also has the effect of reducing the adhesion and migration of the capacitor to the core substrate. The scope of application for patent No. 36 is that the core substrate has high strength because the core material is impregnated with a thermosetting resin. The 37th item of the scope of patent application is because the core substrates are impregnated with resin in the first, second, and third resin substrates, so the core substrate has high strength. Specifically, a reinforcing material such as glass epoxy or glass phenol can be used. The 38th scope of the patent application is because a plurality of capacitors are housed in the core substrate, so the capacitors can be highly integrated. Therefore, the capacity can be ensured. As described in item 39 of the scope of the patent application, because the conductor circuit is formed on the second resin substrate, the wiring density of the substrate can be increased and the interlayer resin can be reduced. 499823 5. Description of the invention (12) The number of layers of the insulating layer. ☆ Please apply for the scope of the patent. Add capacitors to the capacitors, so shorten the IC crystal to supply power instantaneously, and install capacitors, so the chip has high power. The scope of patent application capacity is the power supply in the crystal area of the inner layer does not work. The scope of the patent application is that the supply of wafer power to the inner layer will not be insufficient. The scope of the patent application continues to that the electrode forming the metal container is gold and the surface is smooth, even if the board or the like is disconnected. Any of the electrodes of a capacitor. Because the connection with the interlayer window is the 40th item, which is in the aforementioned receiver. Because the device inside the printed circuit board is separated, the circuit is reduced.

v冤合為,而容易供給1C 第41項,因為表面的晶片 片電容器之靜電乃罨合益的靜電 .τ p 貯电谷里以上,所以在高頻 曰不足,可確保所期望的1C晶片的動 Ϊ ?項:、因為表面的晶片電容器的感抗 容器之感抗以上,所以在高頻率區i電 可確保所期望的1C晶片的動作。 ‘ 第43 ^項,以電鍍之介層窗口而得電 膜之晶片電容器的電極。在此,晶片電 f化組成之表面的凹凸,但是因金屬膜 貫施加熱循環試驗,亦不會在電極和接 的金屬膜,較佳為配設銅、鎳、貴金屬 内藏之電容器上錫和亞鉛等層容易引發 部分的偏移。因此亦可防止偏移的發 499823 五、, 齋明說明(13) 此 1 可 增 加 陶 瓷 組 成 之 晶 片電 容 器 與 樹 脂 組 成 之 接 :續 層 間 樹 脂 絕 緣 層 的 密 著 性 ,即 使 實 施 加 熱 循 環 試 驗 亦 不 丨會 發 /t 在 界 面 的 接 著 層 層間 樹 脂 絕 緣 層 的 剝 離 〇 露 出 請 專 利 範 圍 第 45 項 ,從 晶 片 電 容 器 的 電 極 之 坡 覆 層 至 少 部 份 而 收 容 於 印刷 電 路 板 而 得 電 性 接 續 於 從 前 述 坡 覆 層 露 出 之 電 極 〇 此時 9 從 坡 覆 層 露 出 之 金 屬 較 佳 以 銅 為 主 成 份 D 因 為 可 以 減低 接 續 抵 抗 〇 I 申请專利範圍第4 6項,因為是使用在外緣之内側形成v Unfair, and it is easy to supply 1C item 41, because the static electricity of the chip capacitor on the surface is the static electricity of the benefit. τ p is above the valley of the power storage, so it is insufficient at high frequencies, which can ensure the desired 1C chip. Item: Because the inductive reactance of the inductive reactance of the chip capacitor on the surface is more than that, in the high frequency region, electricity can ensure the desired 1C chip operation. ‘Item 43 ^, the electrode of a chip capacitor obtained by electroplating a dielectric window. Here, the surface of the wafer is composed of bumps, but because the metal film is subjected to a thermal cycle test, the electrode and the connected metal film will not be tinned. It is preferable to equip capacitors with copper, nickel, and precious metals. Layers such as lead and lead can easily cause partial offsets. Therefore, it is also possible to prevent the occurrence of shifts. 499823 V. Zhaiming explained (13) This 1 can increase the connection between the ceramic capacitor chip capacitor and the resin composition: the adhesion of the resin insulation layer between successive layers, even if the heating cycle test is performed. It will send out the peeling of the interlayer resin insulation layer at the interface. Expose the patent scope item No. 45. The slope of the electrode of the chip capacitor is covered at least in part and housed in a printed circuit board. The electrode exposed by the slope cover. At this time, 9 The metal exposed from the slope cover is preferably copper as the main component D because it can reduce the connection resistance. I I applied for the scope of the patent No. 46 because it is formed on the inner side of the outer edge.

|電極之晶片電容器,.即使經由介層窗口而導通,外部電極丨 增加’由於對準的容許範圍增加,因此不會接續不良。I 申請專利範圍第4 7項,由於使用以矩陣狀形成電極之 晶片電容器,因此容易在核心基板收容大型的晶片電容 器。因此由於靜電容量增加,可解決電性的問題。並且, 即使經過各種熱經歷,亦難以發生印刷電路板的彎曲。 申請專利範圍第48項亦可使用多數個取用之晶片電容 斋複數個連結。藉此,可適宜調整靜電容量,IC晶片可确 當地動作。 〜 申請專利範圍第49項,絕緣性接著劑的熱膨脹率比收 各層的熱膨脹率小,也就是設定在陶究組成之電容器的附 近 因此在熱循環試驗’即使發生核心基板與電容哭之門 熱膨脹率差而起之内應力,在核心基板亦難以產生斷裂、 剝離,可達成高信賴性。 申請專利範圍第5 0項之印刷電路板的製造方法,至少 包括以下(a)〜(d)之步驟:| Electrode chip capacitors. Even if they are turned on through the interlayer window, the increase in the number of external electrodes 丨 increases the allowable range of alignment, so there is no connection failure. I. The scope of patent application No. 47. Since a wafer capacitor is used in which electrodes are formed in a matrix, it is easy to store a large wafer capacitor in a core substrate. Therefore, as the electrostatic capacity increases, the electrical problem can be solved. Also, it is difficult for the printed circuit board to bend even through various thermal experiences. Item 48 of the scope of patent application can also use a plurality of chip capacitors to be accessed, and multiple connections. Thereby, the capacitance can be adjusted appropriately, and the IC chip can operate reliably. ~ Item 49 of the scope of the patent application, the thermal expansion coefficient of the insulating adhesive is smaller than the thermal expansion coefficient of each layer, that is, it is set near the capacitor with a ceramic composition. Therefore, in the thermal cycle test, even if the thermal expansion of the core substrate and the capacitor gate occurs, Due to the internal stress caused by the difference in rate, it is difficult to cause cracks and peeling in the core substrate, and high reliability can be achieved. The method for manufacturing a printed circuit board with a scope of application for item 50 includes at least the following steps (a) to (d):

五、發明說明(14) ---一·· (a) 在第1樹脂基板上經由接著材料而裝上電蓉哭; (b) 將第3樹脂基板與具有收容前述電^器之開:的 =2树脂基板與前述第丨樹脂基板,將前述第丨樹脂基板的 前述電容器收容於前述第2樹脂基板的前述開口中,並且 丨將第3街脂基板上塞入前述第2樹脂基板的前述開口之狀 : 1態,經由接著板而積層; (C)以雷射照射,而在前述核心基板上形成放置前述 電容器之介層窗口用開口;以及 I (d)在前述介層窗口用開口上形成介層窗口。 | 申請專利範圍第51項之印刷電路板的製造方法,至少| I包括以下(a)〜(f)之步驟: I1 j \ (a) 在第i樹脂基板的一面之金屬膜上形成介層窗口 形成用開口; (b) 在前述第1樹脂基板的金屬膜非形成面上經由接 著材料而裝上電容器; (c) 將第3樹脂基板與具有收容前述電容器之開口的 ί |第2樹脂基板與前述第1樹脂基板5將前述第1樹脂基板的 |前述電容器收容於前述第2樹脂基板的前述開口中,且將 第3樹脂基板上塞入前述第2樹脂基板的前述開口之狀態, 經由接著板而積層; | (d) 將前述第1樹脂基板、前述第2樹脂基板及前述第 ! 3樹脂基板加熱力π壓而形成核心基板, i ! (e)以雷射照射,而在前述核心基板上形成放置前述 i電容器之介層窗口用開口;以及V. Description of the invention (14) ---... (a) Install the electric cry on the first resin substrate via the adhesive material; (b) Open the third resin substrate with the opening for accommodating the aforementioned electric appliance: = 2 resin substrate and the first resin substrate, the capacitor of the first resin substrate is housed in the opening of the second resin substrate, and the third resin substrate is stuffed into the second resin substrate. The state of the aforementioned openings: 1 state, laminated via a bonding board; (C) forming an opening for an interposer window on which the capacitor is placed on the core substrate by laser irradiation; and I (d) for the interposer window A via window is formed in the opening. | The method for manufacturing a printed circuit board under the scope of patent application No. 51, at least | I includes the following steps (a) to (f): I1 j \ (a) forming an interlayer on a metal film on one side of the i-th resin substrate Opening for window formation; (b) Mounting a capacitor on a non-formed surface of the first resin substrate through a bonding material through a bonding material; (c) A third resin substrate and a second resin having an opening for receiving the capacitor The substrate and the first resin substrate 5 in a state where the capacitor of the first resin substrate is stored in the opening of the second resin substrate, and the third resin substrate is plugged into the opening of the second resin substrate, (D) The first resin substrate, the second resin substrate, and the! 3 resin substrate are heated with a pressure of π to form a core substrate, and i! (E) is irradiated with a laser, and Forming an opening for an interposer window on which the i capacitor is placed on the core substrate; and

I 五、發明說明(15) '—' --- G ^在刚述介層窗口用開口形成介層窗口。 · 哭’明專利範圍第51項,因為在印刷電路板内收容電容 ^因^縮短IC晶片與電容器的距離,減低印刷電路板的 ^ +感抗。此外’在一面形成金屬膜之第1樹脂基板的金 !丰j上以,刻等5又置開口’藉由雷射照射開口的位置’除 I 口攸,口露出之樹脂絕緣層,而設置介層用窗口用的開 ^ 藉此’介層窗口的開口徑因為是依金屬膜的開口徑而 =,因此可以適當的開口徑形成介層窗口。此外同樣地, 介層窗口的開口位置精密度亦視金屬膜的開口位置而定, 因此即使雷射的照射位置精密度低,亦可在適當的位置上 丨形成介層窗口。 I ^ j 申請專利範圍第52項之印刷電路板的製造方法,至少 I包括以下(a)〜(f)之步驟: (a) 在一面貼有金屬膜之第1樹脂基板以及第3樹脂 基板的金屬膜上形成介層窗口形成用開口; (b )在前述第1樹脂基板的金屬膜非形成面上經由接 著材料而裝上電容器; (c )將第3樹脂基板與具有收容前述電容器之開口的 第2樹脂基板與前述第1樹脂基板,將前述第1樹脂基板的 前述電容器收容於前述第2樹脂基板的前述開口中,且將 第3樹脂基板上塞入前述第2樹脂基板的前述開口之狀態, 經由接著板而積層;I. V. Description of the invention (15) '-' --- G ^ An interstitial window is formed with an opening in the interstitial window just described. · Cry 'Ming patent No. 51, because the capacitor is housed in the printed circuit board. ^ The distance between the IC chip and the capacitor is shortened, and the inductive reactance of the printed circuit board is reduced. In addition, "the first resin substrate on which metal film is formed on one side!" Is set on the top of the first resin substrate, and the opening is "positioned by laser irradiation", except for the resin insulation layer exposed by the mouth, and provided. The opening for the interlayer window ^ Because the opening diameter of the interlayer window is determined by the opening diameter of the metal film, the appropriate opening diameter can be used to form the interlayer window. In addition, similarly, the precision of the opening position of the interposer window depends on the opening position of the metal film. Therefore, even if the precision of the laser irradiation position is low, the interposer window can be formed at an appropriate position. I ^ j The method for manufacturing a printed circuit board under the scope of patent application No. 52, at least I includes the following steps (a) to (f): (a) a first resin substrate and a third resin substrate with a metal film on one side An opening for forming an interposer window is formed on the metal film; (b) a capacitor is mounted on the non-formed surface of the first resin substrate through a bonding material; (c) a third resin substrate and The opened second resin substrate and the first resin substrate receive the capacitor of the first resin substrate in the opening of the second resin substrate, and the third resin substrate is plugged into the second resin substrate. The state of the opening is laminated through the bonding plate;

1 (d)將前述第1樹脂基板、前述第2樹脂基板及前述第 j 3樹脂基板加熱加壓而形成核心基板;1 (d) heating and pressing the first resin substrate, the second resin substrate, and the j 3 resin substrate to form a core substrate;

2160-34D3-PI-pid 第19頁 499823 五、發明說明(16) t (e)以雷射照射形成於前述第1樹脂基板及前il第3樹 !! ί板上之前述介層窗口形成用開口 ’而形成放置前述電 各器之介層窗口用開口;以及 (f)在前述介層窗口用開口形成介層窗 ^ 申請專利範圍第5 2項,因為在印刷電路板内收容電容 |二,因此縮知ic晶片與電容器的距離,減低印刷電路板的j 迴路感抗。此外,在一面形成金屬膜之第丨、第3樹脂基板j 的金屬膜上以蝕刻等設置開口,藉由雷射照射開口的位 置,除去從開口露出之樹脂絕緣層,而設置介層用窗口用 2開口。藉此,介層窗口的開口徑因為是依金屬膜的開口 徑而定,因此可以適當的開口徑形成介層窗口。此外同樣 i , 層自口的開口位置精岔度亦視金屬膜的開口位置而| I定,因此即使雷射的照射位置精密度低,亦可在適當的位I i置上形成介層窗口。 其上,因為積層樹脂基板而成,可得充分強度的核心 ^板。並且,在核心基板的兩面配設第i樹脂基板、第3樹 月曰基板而平滑地構成核心基板,可在核心基板之上適當地 形成層間樹脂絕緣層以及導體電路,可減低印刷電路板的 不良⑽發生率。此外,因為在核心基板的兩面設置介層窗 =,因^可以最短的距離接續Ic晶片與晶片電容器,可從丨 外部接續基板供給瞬間的大電力到丨c晶片。 申請專利範圍第53項之印刷電路板的製造方法,至少 匕括以下(a)〜(g)之步驟: | (a)在一面貼有金屬暝之第}樹脂基板以及第3樹脂2160-34D3-PI-pid Page 19 499823 V. Description of the invention (16) t (e) Laser irradiation is formed on the aforementioned first resin substrate and the former il third tree !! ί The aforementioned interposer window is formed on the board Using openings' to form openings for the interposer windows where the aforementioned electrical appliances are placed; and (f) forming interposer windows in the aforementioned openings for the interposer windows ^ application for patent range 52, because the capacitor is housed in the printed circuit board | Second, therefore, the distance between the IC chip and the capacitor is reduced, and the j-circuit inductance of the printed circuit board is reduced. In addition, an opening is provided by etching or the like on the metal film of the third and third resin substrates j on which a metal film is formed, and the resin insulation layer exposed from the opening is removed by laser irradiation to the opening, and a window for an interposer is provided. With 2 openings. Thereby, since the opening diameter of the via window is determined by the opening diameter of the metal film, the via window can be formed with an appropriate opening diameter. In addition, similarly, the precision of the opening position of the layer opening depends on the opening position of the metal film | I, so even if the precision of the laser irradiation position is low, a via window can be formed at an appropriate position I i . On the other hand, since the resin substrate is laminated, a core plate with sufficient strength can be obtained. In addition, an i-th resin substrate and a third tree-shaped substrate are arranged on both sides of the core substrate to form a core substrate smoothly. An interlayer resin insulation layer and a conductor circuit can be appropriately formed on the core substrate, and the printed circuit board can be reduced. Incidence of adverse radon. In addition, because interlayer windows are provided on both sides of the core substrate, the IC chip and the chip capacitor can be connected in the shortest distance, and the instantaneous high power can be supplied to the c chip from the external connection substrate. The method for manufacturing a printed circuit board with a scope of application for patent No. 53 includes at least the following steps (a) to (g): | (a) the second resin substrate and the third resin with metal 暝 on one side

2160-3403-Pi-ptd 第20頁 499823 五、發明說明(17) 基板的金屬膜上形成通孔; (b)在前述第1樹脂基板的金屬 著材料而裝上電容器; (c )將第3樹脂基板與具有收容前述電容器之開口的 第2樹脂基板與前述第1樹脂基板,將前述第1樹脂基板的 前述電容器收容於前述第2樹脂基板的前述開口中,且將 第3樹脂基板上塞入前述第2樹脂基板的前述開口之狀態, 經由接著板而積層; (d)將前述第1樹脂基板、前述第2樹脂基板及前述第 ύ树脂基板加熱加壓而形成核心基板; ^ (e)以雷射照射形成於前述第1樹脂基板及前述第3樹 月曰基板上之前述通孔,而在前述核心基板的 置前述電容器之介層窗口用開口; 氣 (f) 除去前述金屬膜或;使其變薄以及 (g) 在W述核心基板上形成導體電路及介層窗口。 哭,I巧利範圍第53項,因為在印刷電路板内收容電容 迴路/¾ h ^ ^ α 一冤谷。α的距離,減低印刷電路板的 、路感虹。此外,在一面形成金屬膜之第丨、 的金屬膜上以蝕刻等設置開口,藉由 口二土 m 的開口。“ t 緣層,而設置介層用窗口用 幻開口。賴·此S介層窗 的 徑而定,因此可以、A Μ „幵徑因為是依金屬膜的開口 地,口的;窗…外同樣 定’因此即使雷射的照射位置;氏屬=口:置而 w在度低,亦可在適當的位2160-3403-Pi-ptd Page 20 499823 V. Description of the invention (17) A through-hole is formed in the metal film of the substrate; (b) a capacitor is mounted on the metal material of the first resin substrate; (c) the first 3 resin substrate and second resin substrate and first resin substrate having an opening for accommodating the capacitor, the capacitor of the first resin substrate is accommodated in the opening of the second resin substrate, and the third resin substrate is placed on the third resin substrate The state in which the opening of the second resin substrate is plugged is laminated via a bonding plate; (d) the first resin substrate, the second resin substrate, and the first resin substrate are heated and pressed to form a core substrate; ^ ( e) the through holes formed in the first resin substrate and the third tree substrate are irradiated with laser light, and openings for the interposer windows of the capacitors are placed in the core substrate; gas (f) removes the metals Thin film or (g) forming a conductor circuit and a via window on the core substrate. Cry, I am in the 53rd item of the scope, because the capacitor circuit is contained in the printed circuit board / ¾ h ^ ^ α The distance of α reduces the road and rainbow of the printed circuit board. In addition, an opening is formed by etching or the like on the metal film on which the metal film is formed on one side, and the opening is formed by the mouth m. "T edge layer, and the interlayer window is provided with a magic opening. Lai · This S interlayer window depends on the diameter of the window, so it can be, because the diameter depends on the opening of the metal film, the mouth; the window ... outside The same setting 'so even if the laser irradiation position; genus = mouth: set and w is low, it can also be in an appropriate position

499823 五、發明說明(18) -------- 置上形成介層窗口。又,藉由蝕刻除去金屬膜,由·於可薄 地形成配線的厚度,可形成微細間距的電路。 其上’因為積層樹脂基板而成,可得充分強度的核心 基板。並且’在核心基板的兩面配設第1樹脂基板、第3樹| j月曰基板而平滑地構成核心基板,可在核心基板之上適當地 形成層間樹脂絕緣層以及導體電路,可減低印刷電路板的 不良品發生率。 為了達成上述目的,申請專利範圍第54項的發明,是 在核心基板上積層樹脂絕緣層與導體電路的印刷電路板, 丨其中前述核心基板上内藏電容器,形成與前述電容器相接| !之相對大的下層介層窗口,在前述核心基板的上面之層間 樹脂絕緣層上,配設與1個前述下層介層窗口相連之複數 個相對小之上層介層窗口。 申請專利範圍第54項,在核心基板内藏電容器,而在 |電谷裔上形成與電容器之端子接續之相對大的下層介層 I窗,在核心基板的上面的層間樹脂絕緣層上,配設與1個 |下層介層窗相接續之複數個相對小的上層介層窗。藉此,| 分別對應電容器的配設位置,電容器的端子與下層介層窗1 可接續,而可卻實地進行從電容器到丨c晶片的電力供給。 又’藉由配設複數個相對小的上層介層窗,因為可得到與 感抗並列接續同樣的效果,而可提高電源線及接地線的高 頻率特性’並防止電力供給不足或因接地程度的變動而I c j晶片錯誤的動作。並且,由於可縮短配線長,可減低迴路 j感抗。499823 V. Description of the invention (18) -------- Place the interlayer window on it. In addition, the metal film is removed by etching, and a fine-pitch circuit can be formed because the thickness of the wiring can be thinly formed. Since the resin substrate is laminated thereon, a core substrate having sufficient strength can be obtained. In addition, the first resin substrate and the third tree are arranged on both sides of the core substrate, and the core substrate is smoothly formed. An interlayer resin insulation layer and a conductor circuit can be appropriately formed on the core substrate, and the printed circuit can be reduced. The incidence of defective products. In order to achieve the above purpose, the invention of the 54th patent application is a printed circuit board in which a resin insulation layer and a conductor circuit are laminated on a core substrate, and a capacitor is built in the core substrate to form a connection with the capacitor. The relatively large lower interlayer window is provided with a plurality of relatively small upper interlayer windows connected to one of the aforementioned lower interlayer windows on the interlayer resin insulating layer above the core substrate. The scope of the patent application is No. 54. The capacitor is embedded in the core substrate, and a relatively large lower interlayer I window connected to the capacitor terminals is formed on the electric substrate. On the interlayer resin insulation layer above the core substrate, Suppose that there are a plurality of relatively small upper interlayer windows connected to one | lower interlayer window. In this way, | corresponds to the position of the capacitor, and the terminals of the capacitor and the lower interlayer window 1 can be connected, but the power can be supplied from the capacitor to the chip. Furthermore, by providing a plurality of relatively small upper interlayer windows, the same effect as that of the inductive reactance can be obtained in parallel, and the high-frequency characteristics of the power line and the ground line can be improved, and the power supply shortage or the grounding degree can be prevented The I cj chip moves incorrectly. In addition, since the wiring length can be shortened, the loop j inductance can be reduced.

2160-3403-Ff-ptd 第22頁2160-3403-Ff-ptd Page 22

托—凹邰“較佳以樹脂填充。藉由在電容莠、•核心其 板之間沒有空隙,内藏雷社¥合15 “基 容器為起點夕處A臧之包合态動作變小,即使發生以電 外,哕槲許介目士丄 具允之树月曰使其緩和。此 (m i二 有減低電容器與核心基板的接著以及偏移 emigration)的效果。 灯 介居丄明ί利乾圍第55、56項,是使用表面平坦的填充^ 窗層介層窗=藉& ’可直接接續!個下層介層 介声:介層窗。藉此,可提高下層界層窗與以 供的接績性,可卻實地進行從電容器到U片的電) 馨 :請專利範圍第57項,是在形成於核心基板的凹部之 谷1個電容器。藉此,因為將電容器配置在核心基板 内,而縮短1C晶片與電容器的距離,可減低迴路感抗土。1 w 申請專利範圍第58項,因為在凹部收容多數個電容 器,因此可高集積化電容器。 谷 申請專利範圍第5 9、6 0項’以電鍍之介層窗口而得 |性接續至形成金屬膜之晶片電容器的電極。在此,晶片電 j谷器的電極是在金屬化組成之表面的凹凸,但是因金屬膜 而表面平滑,即使實施加熱循環試驗,亦不會在電極和兔 著板等發生斷線。 ^ 較佳在晶片電容器的表面施予粗化處理。藉此,可辦 加陶瓷組成之晶片電容器與樹脂紐成之接續層、層間樹^ |絕緣層的密著性,即使實施加熱循環試驗,亦不會發生^ j界面的接著層、層間樹脂絕緣層的剝離。 上The support-concave is preferably filled with resin. With no gap between the capacitor and the core, there is no space between the plates, and the built-in container is used as a starting point. The inclusion state of A Zang becomes smaller. Even if electricity is lost, the mister Xu Xiemu Shi with the allowable tree month said to ease it. This (m i 2 has the effect of reducing the adhesion of the capacitor to the core substrate and offset emigration). The lights of Jieming are located at the 55th and 56th of Liganwei. They are filled with a flat surface ^ Window layer interlayer window = Borrow & ’Can be directly connected! A lower interposer Intermediate: interposer window. This can improve the performance of the lower boundary layer window and supply, but can actually carry out the electricity from the capacitor to the U chip.) Hsin: Please apply for the 57th patent scope, which is in the valley of the recess formed in the core substrate. Capacitor. Therefore, because the capacitor is arranged in the core substrate, the distance between the 1C chip and the capacitor is shortened, and the inductance of the circuit can be reduced. The 1 w patent application scope No. 58 is because a large number of capacitors are housed in the recessed portion, so the capacitor can be highly integrated. Gu applied for patents No. 59, 60 of the scope of the patent application, which were obtained by using a plated interlayer window to be connected to the electrode of a chip capacitor forming a metal film. Here, the electrode of the chip electric valleyr has unevenness on the surface of the metallized composition, but the surface is smooth due to the metal film, and even if the heating cycle test is performed, no disconnection will occur between the electrode and the plate. ^ The surface of the chip capacitor is preferably roughened. In this way, the connection layer and interlayer tree of chip capacitors made of ceramic and resin can be made. The adhesion of the insulating layer, even if the heating cycle test is performed, the bonding layer at the ^ interface and the interlayer resin insulation will not occur. Layer peeling. on

499823 I五、發明說明(20) " ' -- 申請專利範圍第61項,從晶片電容器的電極之•披 露出至少一部份而收容於印刷電路板,而得電性接續1 = j則述披覆層露由之電極。此時,從坡覆層露出之金龢t 以銅為主成份。其理由為露出之金屬,以電鍍形成金^ 層’亦可提两接續性,並能減低接續抵抗。 _申請專利範圍第62項,因為是使用在外緣之内側形 j電極之晶片電容器,即使經由介層窗口而導通,外部帝 !增加’由於對準的容許範圍增加,因此不會接續不良, | 申請專利範圍第63項,由於使兩以矩陣狀形成電極之 晶片電容器,因此容易在核心基板收容大型的晶片電容 器。因此由於靜電容量增加,可解決電性的問題。並且, 即使經過各種熱經歷,亦難以發生印刷電路板的彎曲。 | 申請專利範圍第64項亦可使用多數個取用之晶片電容 |器複數個連結。藉此,可適宜調整靜電容量,I c晶片可適 當地動作。 申請專利範圍第65項,在核心基板與電容器之間填充 樹脂,樹脂的熱膨脹率比核心基板的熱膨脹率小,也就是 設定在陶瓷組成之電容器的附近。因此在熱循環試驗,即 使發生核心基板與電容器之間熱膨脹率差而起之内應力, 在核心基板亦難以產生斷裂、剝離,可達成高信賴性。 I 申請專利範圍第66項之印刷電路板的製造方法,至少 包括以下(a)〜(e)步驟: (a) 在核心基板上内藏電容為; (b) 在前述電容器的上面形成樹脂絕緣層;499823 I V. Description of the invention (20) " '-Application for patent No. 61, disclosed at least part of the electrode of the chip capacitor and housed in the printed circuit board, and the electrical connection is 1 = j The electrode of the covering layer is exposed. At this time, the gold and t exposed from the slope cover are mainly composed of copper. The reason is that the exposed metal, and the formation of a gold layer by electroplating can also improve the continuity and reduce the continuity resistance. _Apply for the scope of patent No. 62, because it is a chip capacitor using an inner-shaped j-electrode on the outer edge. Even if it is turned on through the interlayer window, the external dip! The 63rd scope of the patent application, because two wafer capacitors are formed in a matrix, makes it easy to accommodate large wafer capacitors in the core substrate. Therefore, as the electrostatic capacity increases, the electrical problem can be solved. Also, it is difficult for the printed circuit board to bend even through various thermal experiences. | The 64th scope of the patent application can also use multiple chip capacitors. Thereby, the capacitance can be adjusted appropriately, and the IC chip can operate appropriately. The scope of application for patent No. 65 is filled with resin between the core substrate and the capacitor. The thermal expansion coefficient of the resin is smaller than that of the core substrate, that is, it is set near the capacitor made of ceramic. Therefore, in the thermal cycle test, even if internal stress caused by the difference in thermal expansion coefficient between the core substrate and the capacitor occurs, it is difficult for the core substrate to crack or peel, and high reliability can be achieved. I The method for manufacturing a printed circuit board under the scope of application for patent No. 66 includes at least the following steps (a) to (e): (a) The capacitor is built in the core substrate as: (b) A resin insulation is formed on the above capacitor. Floor;

499823 五、發明說明(21) (c )在W述樹脂絕緣層上形成與前述電容器之·電極相 接之相對大的下層介層窗口; (d y在則述核心基板的上面形成層間樹脂絕緣層;以 及 *( e)在前述層間樹脂絕緣層上配設與1個前述下層介 層窗口相接之相對小的上層介層窗口。 申請專利範圍第6 6項, 電容器上形成與電容器之端 ®,在核心基板的上面的層 r層介層窗相接續之複數個 刀別對應電容器的配設位置 可接續,而可卻實地進行從 又,藉由配設複數個相對小 ,抗分並列接續同樣的效果 咼頻率特性,並防止電力供 i C晶片錯誤的動作。並且, 路感抗。 在核心基板内藏電容器,而在 子接續之相對大的下層介層 間樹脂絕緣層上,配設與1個 相對小的上層介層窗。藉此, ,電容器的端子與下層介層窗 電容器到I C晶片的電力供給。 的上層介層窗,因為可得到與 ,而可提高電源線及接地線的 給不足或因接地程度的變動而 由於可縮短配線長,可減低迴499823 V. Description of the invention (21) (c) Form a relatively large lower interlayer window on the resin insulation layer described above to contact the electrodes of the capacitor; (dy) form an interlayer resin insulation layer on the core substrate ; And * (e) a relatively small upper interlayer window connected to one of the aforementioned lower interlayer windows is provided on the aforementioned interlayer resin insulating layer. No. 66 of the scope of the patent application, the capacitor is formed with the capacitor end ® The multiple r-type interlayer windows connected to the upper substrate of the core substrate can be connected to each other, and the capacitors can be connected to each other, but they can be connected in the field. By arranging a plurality of relatively small, anti-parallel connection The same effect 咼 frequency characteristics, and prevent the wrong operation of the power supply IC chip. And, the road inductance is built in. Capacitors are built in the core substrate, and a relatively large lower interlayer resin insulation layer is connected with the sub-connection. 1 relatively small upper interlayer window. As a result, the capacitor terminal and the lower interlayer window capacitor provide power to the IC chip. The upper interlayer window can increase the power because it can be obtained. Insufficient to line and ground line or due to changes in ground level and can be shortened due to the wire length, can reduce back

申請專利範圍第6 7項,扃The scope of patent application is 67, 7

收容1個電容器。藉此,因為在核=心基板之凹部之 縮短ic晶片與電容器的距離在可核二基板内配置電容器’ 申請專利範圍第68項因路感抗。 前述電^,可高集積化電^在㈣凹部中收容複數 申請專利範圍第69項,因為右人女 脂材料上形成通孔,在形成】::材成為樹脂之 札之树脂材料上貼上樹脂Contains one capacitor. Because of this, because the distance between the IC chip and the capacitor is shortened in the concave portion of the core = core substrate, the capacitor is arranged in the core-capable second substrate. The aforementioned electricity ^ can be highly integrated. Electricity can be accommodated in the recessed portion of the multiple application patent scope item 69, because the right female feminine material is formed with a through hole, and is formed] :: The resin material is made of resin Resin

五、發明說明(22) — 2 而形成具有凹部之核心基板。藉此,可形成具·有底部 平坦之凹部的核心基板。 也申請專利範圍第70、71項,使用表面平坦之填充之介 | 1向=做為下層介層窗。藉此,可直接接續1個下層介層 |1於複數個上層介層窗。藉此,可提高下層界層窗與上層 介層霞的接續性,可卻實地進行從電容器到〖c晶片的電力 供給。5. Description of the invention (22)-2 to form a core substrate having a recessed portion. Thereby, a core substrate having a concave portion with a flat bottom can be formed. It also applies for patents Nos. 70 and 71, using a flat surface filled interposer | 1-direction = as the lower interposer window. Thereby, one lower interposer | 1 can be directly connected to a plurality of upper interposer windows. Thereby, the continuity between the lower boundary layer window and the upper interlayer can be improved, and the power supply from the capacitor to the chip c can be performed on the spot.

申晴專利範圍第7 2項之發明,是在凹部内的複數個電 容器的上面施加壓力,或輕敲而平均電容器上面的高度。 藉此’在凹部内配設電容器時,複數個電容器的大小即使 !變動’亦可平均其高度,而能使核心基板平滑。藉此,無 損於核心基板的平滑性,由於可適當地形成上層的層間樹 脂絕緣層以及導體電路’可減低印刷電路板的不良品發生 率。 [簡單圖示說明] | 第1圖係本發明之實施例1的印刷電路板的製造步驟 I圖。 f - 第2圖係本發明之實施例1的印刷電路板的製造步驟 圖。 第3圖係本發明之實施例1的印刷電路板的製造步驟 圖。 第4圖係本發明之實施例1的印刷電路板的製造步驟 |圖c 第5圖係本發明之實施例1的印刷電路板的製造步驟The invention in item 72 of Shen Qing's patent scope is to apply pressure on the surfaces of a plurality of capacitors in the recess, or tap to average the height of the capacitors. Therefore, when the capacitors are arranged in the recesses, even if the sizes of the plurality of capacitors are changed, the heights can be averaged, and the core substrate can be smoothed. Thereby, the smoothness of the core substrate is not impaired, and since the upper interlayer resin insulating layer and the conductor circuit can be appropriately formed, the incidence of defective products on the printed circuit board can be reduced. [Simplified illustration] | Fig. 1 is a diagram showing the manufacturing steps I of the printed circuit board according to the first embodiment of the present invention. f-FIG. 2 is a drawing showing the manufacturing steps of the printed circuit board according to the first embodiment of the present invention. Fig. 3 is a drawing showing the manufacturing steps of the printed circuit board according to the first embodiment of the present invention. FIG. 4 is a manufacturing step of a printed circuit board according to the first embodiment of the present invention. FIG. C FIG. 5 is a manufacturing step of the printed circuit board according to the first embodiment of the present invention.

2160-3403-?: .pU 第26頁 4998232160-3403- ?: .pU page 26 499823

I五、發明說明(23) ! π I圖。 第6圖係本發明之實施例1的印刷電路板的製造步驟 圖。 第7圖係本發明之實施例1的印刷電路板的剖面圖。 I 第8圖係顯示在第7圖所示之印刷電路板上載置I c晶 I片,裝上子板之狀態的剖面圖。 i j 第9圖係顯示在本發明之實施例1第1別例之印刷電路 板上载置ί C晶片之狀態的剖面圖。 第10圖係顯示在本發明之實施例i之第1改變例之印刷 電路板的製造步驟圖。I. Explanation of the invention (23)! Π I diagram. Fig. 6 is a drawing showing the manufacturing steps of the printed circuit board according to the first embodiment of the present invention. Fig. 7 is a sectional view of a printed circuit board according to the first embodiment of the present invention. I FIG. 8 is a cross-sectional view showing a state where an I c crystal I sheet is placed on a printed circuit board shown in FIG. 7 and a daughter board is mounted. i j FIG. 9 is a cross-sectional view showing a state where a C wafer is placed on a printed circuit board according to the first other example of the first embodiment of the present invention. Fig. 10 is a diagram showing the manufacturing steps of a printed circuit board according to the first modification of the embodiment i of the present invention.

第1 1圖係本發明之實施例1之第1改變例之印刷電路板 的剖面圖。 第1 2圖係表示供給至I c晶片電壓與時間的變化圖。 第1 3圖係顯示收容在本發明之實施例1之第1改變例之 印刷電路板的晶片電容器的剖面圖。 第1 4圖係顯示收容在本發明之 印刷電路板的晶片電容器的平面圖。Fig. 11 is a sectional view of a printed circuit board according to a first modification of the first embodiment of the present invention. Fig. 12 is a graph showing changes in voltage and time supplied to the IC chip. Fig. 13 is a sectional view showing a chip capacitor housed in a printed circuit board according to a first modification of the first embodiment of the present invention. Fig. 14 is a plan view showing a chip capacitor housed in a printed circuit board of the present invention.

第1 5圖係顯示收容在本發明之實施例丄之第2改變你 印刷^路板的晶片電容器的平面圖。FIG. 15 is a plan view showing a chip capacitor housed in a second modified printed circuit board of the second embodiment of the present invention.

=16圖係顯示收容在本之歹 印刷電路板的晶片電容器的平面圖。U之弟Z 圖。第17圖係本發明之實施例2:印刷電路板的製造步 第1 8圖係本發明之實施例2的印刷電路板的製造步 五、發明說明(24) 圖。 第1 9圖係本發明 卜 之貫施例2的印刷雷 第2 0圖係顯示在第 ·.板的剖面圖。 幻,I上子板之狀態的剖面圖。 兔路板上载置1C晶 苐2 1圖係本發明 。 4Θ之貫施例2的印刷電 圖 圖 路板的製造步 弟2 2圖係本發明 * 之貫施例2的印刷電路板的製造步 驟 第2 3圖係太發明 片之狀態的剖面圖f之貫施例2的印刷電路杯卜= 16 is a plan view showing a chip capacitor housed in a Motoichi printed circuit board. U brother Z map. Fig. 17 shows the manufacturing steps of the printed circuit board according to the second embodiment of the present invention. Fig. 18 shows the manufacturing steps of the printed circuit board according to the second embodiment of the present invention. 5. Explanation of the invention (24). Fig. 19 is a printed mine according to Example 2 of the present invention. Fig. 20 is a cross-sectional view of the plate. A cross-sectional view of the state of the daughter board on I, I. The 1C crystal placed on the rabbit board is shown in the figure. 4Θ The printed step diagram of the printed circuit board of the second embodiment 2 The drawing shows the manufacturing process of the printed circuit board of the second embodiment of the present invention * The second 3 is a sectional view of the state of the invention sheet f The printed circuit cup of the second embodiment

路板上載置IC 曰曰 第24圖係本發明 +載置尸晶片之狀態的二=列 <改變例的印刷電路板上 圖。〃 1係尽發明之實施例3的印刷電路板的製造步驟 弟2 6圖修太恭gg 圖。 4 \實施例3的印刷電路板的製造步驟 第圖係本發明之實施例3的印刷電路板的製it步驟 肇 圖 圖。 圖 ’圖1系本發明之實施例3的印刷電路板的製造步驟 ^ 圖4本發明之實施例3的印刷電路板的製造步驟 第3 〇圖係本發明之實施例3的印刷電路板的製造步驟 圖Circuit board mounting IC, said 24th figure is a printed circuit board diagram of the present invention + the two rows of a state where a corpse wafer is mounted. 〃 1 is the manufacturing steps of the printed circuit board of the third embodiment of the invention. Brother 2 6 Figure repairs the gg diagram. 4 \ Manufacturing steps of the printed circuit board of the third embodiment The figure shows the manufacturing steps of the printed circuit board of the third embodiment of the present invention. FIG. 1 is a manufacturing step of a printed circuit board according to the third embodiment of the present invention. FIG. 4 is a manufacturing step of a printed circuit board according to the third embodiment of the present invention. FIG. Manufacturing steps diagram

2160~3403-Pf·ptd 第28頁 發明說明(25) 第31圖係顯示在篦m ® . 裝上子板之狀態的剖二圖之印刷電路板上載置IC、片, 极上载 第3 2圖係顯示本發明 一 第3 3圖係本發明夕每^ 造舟驟 11知例3之第ί改變例的印刷電路板 番· ® 了 r曰Η >⑴ 月之貫施例3之改變例的印刷電路 且1C曰日片之狀態的剖面圖η 的製造步驟圖 變例的印刷電路板 第34圖係本發明夕埃^ t Λ 沾制▲ 明之貫施例3之第1改 的製造步驟圖。 的製=、本發明之實施例3之第1改變例的印刷電路板 的製本發明之實施例3之第1改變例的印刷電路板 圖 圖 圖 圖 圖 第3 7圖係本發明之實施例4的印刷電路板的製造步驟 第38圖係本發明之實施例4的印刷電路板的製造步驟 第39圖係本發明之實施例4的印刷電路板的製造步驟 第40圖係本發明之實施例4的印刷電路板的製造步驟 第41圖係本發明之實施例4的印刷電路板的製造步驟 第42圖係本發明之實施例4的印刷電路板的剖面圖。 第43圖係顯示本發明之實施例4的印刷電路板上載置 499823 |五 '發明說明(26) ~__________ |ic晶片之狀態的剖面圖。 · 第44圖係第42圖中的介層窗口 66〇之擴大圖,第 44(B)圖為第44(A)圖的B箭頭圖。 I 第4 5圖係本發明之實施例4之第1改變例的印刷電路板 I的製造步驟圖。 ! 第4 6圖係本發明之實施例4之第1改變例的印刷電路板 的製造步驟圖。 第4 7圖係本發明之實施例4之第1改變例的印刷電路板 的製造步驟圖。 I 第48圖係本發明之實施例4之第1改變例的印刷電路板j j的製造步驟圖。 |2160 ~ 3403-Pf · ptd Page 28 Description of the invention (25) Figure 31 is a cross-sectional view showing the state of the daughter board mounted on 篦 m ®. IC and chip are placed on the printed circuit board. The drawing shows the first to third embodiment of the present invention. The third embodiment is a printed circuit board of the third modified example of the 11th example of the shipbuilding step 11 of the present invention. Example of a printed circuit and a cross-sectional view of the state of 1C Japanese sheet η Manufacturing step diagram Variation of the printed circuit board Fig. 34 shows the manufacturing method of the present invention ^ t Λ Dipping ▲ The first modification of the third embodiment of the invention Steps illustration. Manufacture = Printed circuit board of the first modified example of the third embodiment of the present invention Printed circuit board of the first modified example of the third embodiment of the present invention 4 steps for manufacturing printed circuit board FIG. 38 shows steps for manufacturing printed circuit board according to Embodiment 4 of the present invention FIG. 39 shows steps for manufacturing printed circuit board according to Embodiment 4 of the present invention FIG. 40 shows implementation of the present invention Manufacturing Process of Printed Circuit Board of Example 4 FIG. 41 is a manufacturing process of the printed circuit board of Embodiment 4 of the present invention. FIG. 42 is a sectional view of the printed circuit board of Embodiment 4 of the present invention. Fig. 43 is a cross-sectional view showing a state where a printed circuit board is mounted on the fourth embodiment of the present invention. Figure 44 is an enlarged view of the interposer window 66 in Figure 42 and Figure 44 (B) is the arrow B diagram in Figure 44 (A). Fig. 45 is a diagram showing the manufacturing steps of a printed circuit board I according to a first modification of the fourth embodiment of the present invention. Figs. 4 to 6 are diagrams showing manufacturing steps of a printed circuit board according to the first modification of the fourth embodiment of the present invention. Figures 4 to 7 are diagrams showing manufacturing steps of a printed circuit board according to a first modification of the fourth embodiment of the present invention. Fig. 48 is a diagram showing the manufacturing steps of a printed circuit board j j according to a first modification of the fourth embodiment of the present invention. |

j 第49圖係本發明之實施例4之第1改變例的印刷電路板I 的製造步驟圖。 第5 0圖係本發明之實施例4之第1改變例的印刷電路板 的製造步驟圖。 第5 1圖係本發明之實施例4之第1改變例的印刷電路板 的製造步驟圖。 I 第52圖係顯示本發明之實施例4之第1改變例之印刷電 路板上載置IC晶片之剖面圖。j Fig. 49 is a diagram showing the manufacturing steps of the printed circuit board I according to the first modification of the fourth embodiment of the present invention. Fig. 50 is a drawing showing the manufacturing steps of a printed circuit board according to the first modification of the fourth embodiment of the present invention. Fig. 51 is a diagram showing the manufacturing steps of a printed circuit board according to a first modification of the fourth embodiment of the present invention. Fig. 52 is a cross-sectional view showing an IC chip mounted on a printed circuit board according to the first modification of the fourth embodiment of the present invention.

第5 3圖係顯示本發明之實施例4之第2改變例之印刷電 路板上載置I C晶片之剖面圖。 [發明實施最佳型態] i實施例1 ; 以下5參照本發明之實施例而說明3Fig. 53 is a cross-sectional view showing an IC chip mounted on a printed circuit board according to a second modification of the fourth embodiment of the present invention. [The best mode of the invention implementation] i Embodiment 1; the following 5 will be described with reference to the embodiment of the present invention 3

2150-3403-?[ ·ρί(< 第30頁 499823 五、發明說明(27) 首先,參照第7、8圖說明有關本發明之實施例了的印 刷電路板。第7圖係顯示印刷電路板1 0的剖面,第8圖係、顯 示第7圖所示之印刷電路板10上載置1C晶片90,而安袭在' 子板9 5之侧的狀態。 如第7圖所示之印刷電路板1 0是由收容複數個晶片電 谷裔2 0之核心基板3 0與增璺配線層8 0 A、8 0 B所組成。增疊 配線層8 0 A、8 0 B是由樹脂層4 0以及層間樹脂絕緣層1 4 〇、 1 4 1所組成。上側的樹脂層40上形成有導體電路58以及介 層窗口 6 0,而上側及下側的層間樹脂絕緣層1 4 〇上形成有 導體電路1 5 8以及介層窗口 1 6 0,而上側及下側的層間樹脂 絕緣層141上形成有導體電路159以及介層窗口 ΐβ4。層間 樹脂絕緣層141之上,配設銲錫光阻(s〇ider resist)層 70。增疊配線層80A與增疊配線層8 0B是經由形成在核心基 板30上的貫穿孔56而接續。 ‘ 晶片電容器20是由第17 (A)圖所示之第1電極η與第 2電極22,與夾住第1、第2電極之誘電體23所組成,在诱 電體23上相對配置複數枚接續於第i電極2丨側之第導電艨 24,與接續於第2電極22侧之第2導電膜25。 … 如第8圖所示,上側的增疊配線層8〇A上配設著用以接 續至1C晶片90的襯墊92P1、92p2的銲錫凸塊76u。另〆方 面,在下侧的增疊配線層80B上則形成用以 5 的襯墊94P1、94P2之銲錫凸塊76D。 于牙 IC晶片90的接地用的襯墊92P1是經由凸塊76U_導艚 電路159 -介層窗口 164-導體雷炊人 ^ 等锻電路U 8-介層窗口 160 一導艨電2150-3403-? [≪ p.30499823 V. Description of the Invention (27) First, a printed circuit board according to an embodiment of the present invention will be described with reference to FIGS. 7 and 8. FIG. 7 shows a printed circuit. The cross section of the board 10, FIG. 8 shows the state where the 1C chip 90 is placed on the printed circuit board 10 shown in FIG. 7, and the state of the attack is on the side of the daughter board 95. The printing shown in FIG. The circuit board 10 is composed of a core substrate 30 which contains a plurality of wafers, and a wiring layer 8 0 A, 8 0 B. The stacked wiring layer 8 0 A, 8 0 B is a resin layer It is composed of 40 and interlayer resin insulation layers 140 and 14. The upper resin layer 40 is formed with a conductor circuit 58 and an interlayer window 60, and the upper and lower interlayer resin insulation layers 14 are formed. There are conductor circuits 158 and interlayer windows 160, and conductor circuits 159 and interlayer windows ΐβ4 are formed on the upper and lower interlayer resin insulation layers 141. Solder photoresistors are arranged on the interlayer resin insulation layers 141. (Soider resist) layer 70. The superimposed wiring layer 80A and the superimposed wiring layer 80B pass through the through holes 5 formed in the core substrate 30. The chip capacitor 20 is composed of a first electrode η and a second electrode 22 as shown in FIG. 17 (A), and an electromotive body 23 sandwiching the first and second electrodes. A plurality of second conductive electrodes 24 connected to the i-th electrode 2 丨 side and a second conductive film 25 connected to the second electrode 22 side are arranged opposite to each other on the upper side. As shown in FIG. A is provided with solder bumps 76u of pads 92P1 and 92p2 for connection to the 1C chip 90. On the other hand, a solder pad 5 of 94P1 and 94P2 is formed on the lower stacked wiring layer 80B. Bump 76D. The pad 92P1 for grounding of the IC chip 90 is passed through the bump 76U_guide circuit 159-interlayer window 164 -conductor Rabbi ^ isoforged circuit U 8-interlayer window 160-a guide Electricity

2160-3403-Ff-pid2160-3403-Ff-pid

第31頁 499823 五、發明說明(28) 路58-介層窗口60而接續至晶片電容器2〇的第!電極5l。另 | 一方面,子板95的接地用的襯墊94P1是經由凸塊76D-介 I層窗口164-導體電路158-介層窗口 160—貫穿孔56—導體電 i路5 8 —介層窗口 60而接續至晶片電容器20的第1電極21。 1C晶片90的電源用的襯墊92P2是經由凸塊76U-介層 窗口 164-導體電路158 -介層窗口 160-導體電路58-介層窗 口 60而接續至晶片電容器20的第2電極22。另一方面,^ !板95的電源羯的襯墊94P2是經由凸塊76D-介層窗口 164 -j導體電路158-介層窗口 160-貫穿孔56 -介層窗口60而接續Page 31 499823 V. Description of the invention (28) Road 58-Interlayer window 60 is connected to the chip capacitor 20! Electrode 5l. On the other hand, on the one hand, the pad 94P1 for grounding of the daughter board 95 is via the bump 76D—the dielectric layer window 164—the conductor circuit 158—the dielectric window 160—through hole 56—the conductor circuit 5 8—the dielectric window 60 is connected to the first electrode 21 of the chip capacitor 20. The pad 92P2 for the power supply of the 1C chip 90 is connected to the second electrode 22 of the chip capacitor 20 via the bump 76U-interlayer window 164-conductor circuit 158-interlayer window 160-conductor circuit 58-interlayer window 60. On the other hand, the pad 94P2 of the power source 板 of the plate 95 is connected via the bump 76D-via window 164-j conductor circuit 158-via window 160-through hole 56-via window 60

|至晶片電谷态20的第2電極22。再者,未圖示,但是ic晶 片的信號用襯墊是經由印刷電路板的導體電路、介層窗口 以及貫穿孔而接續至子板的信號用襯墊。 如第7圖所示,本實施例的核心基板3〇,是由在一面 形成接續晶片電容器之導電襯墊部34之第1樹脂基板3(^, 與經由接著用樹脂層(接著板)3 8 a而接續至第1樹脂基板 | 30a之第2樹脂基板30b,與經由接著用樹脂層(接著板) 38b而接續至第2樹脂基板30b之第3樹脂基板30c所組成。 第2樹脂基板3Ob上形成有可收容晶片電容器2〇之開口 30B ° 藉此,可在核心基板3 〇内收容晶片電容器2 〇,而能縮 I短I C晶片與晶片電容器2 0的距離,因此可減低印刷電路板 10的迴路感抗。此外,由於第丄樹脂基板30a、第2樹脂基 板3 0b、第3樹脂基板30c積層而成,因此可得到充分強度 的核心基板30。並且,因為在核心基板3〇的兩面上配言免&第To the second electrode 22 of the wafer valley state 20. Although not shown, the signal pad of the ic chip is a signal pad connected to the daughter board via a conductor circuit of the printed circuit board, a via window, and a through hole. As shown in FIG. 7, the core substrate 30 of this embodiment is a first resin substrate 3 (^, and a resin layer (adhesive plate) 3) through which a conductive pad portion 34 of a continuous chip capacitor is formed on one side. 8a is connected to the first resin substrate | 30a of the second resin substrate 30b, and the third resin substrate 30c is connected to the second resin substrate 30b through the bonding resin layer (adhesive plate) 38b. The second resin substrate An opening 30B capable of accommodating the chip capacitor 20 is formed on the 3Ob. With this, the chip capacitor 20 can be accommodated in the core substrate 30, and the distance between the IC chip and the chip capacitor 20 can be shortened, thereby reducing the printed circuit. The loop inductance of the board 10. In addition, since the third resin substrate 30a, the second resin substrate 30b, and the third resin substrate 30c are laminated, a core substrate 30 with sufficient strength can be obtained. Dubbing & Cap

499823 發明說明(29) "~^ ' ' 一 1樹脂基板30a、第3樹脂基板30c而平滑構成核心基•板30, 了在核心基板30之上適當地形成樹脂層4Q、以及 導體電路5 8、1 5 8、1 5 9,可減低印刷電路板的不良品發生 I率。 ί I i § 此外,本實施例,如第1圖(D)所示,使絕緣性接著j 劑33介於第1樹脂基板3〇a與晶片電容器2〇之間。在此,接 著劑36的熱膨脹率比核心基板30小,也就是設定在陶瓷組 成之電容器20的附近。因此在加熱循環試驗,在核心基板 i及接著層40與3曰片電谷器20之間即使發生熱膨脹率造成之 !内應力,核心基板也難以產生裂痕、剝離等,而能達成高j I信賴性。亦可防止偏移的發生。 |響 繼續,參照第卜7圖而說明有關參照第7圖而上述之印 刷電路板的製造方法。 (1)將厚度0.1mm之玻璃布等的心材含浸於雙馬來酸 |酐縮亞胺二Df嗪(BT )樹脂而硬化之第i樹脂基板3〇a的一 丨面層壓銅箔3 2之銅張積層板做為出發材料(參照第i ( I 圖)。 ! ij I: : 接著’在該鋼貼積層板的銅箔32侧,藉由圖案狀蝕 刻,而在第1樹脂基板3〇a的一面形成導電襯墊部34 (參昭 第1 (B )圖)。 …、499823 Description of the invention (29) " ~ ^ '' One resin substrate 30a and third resin substrate 30c smoothly constitute the core base plate 30, and a resin layer 4Q and a conductor circuit 5 are appropriately formed on the core substrate 30. 8, 1 5 8, 1 5 9 can reduce the occurrence rate of defective products on printed circuit boards. I i § In this embodiment, as shown in FIG. 1 (D), the insulating adhesive agent 33 is interposed between the first resin substrate 30a and the chip capacitor 20. Here, the thermal expansion coefficient of the adhesive 36 is smaller than that of the core substrate 30, that is, it is set near the capacitor 20 made of ceramic. Therefore, in the heating cycle test, even if the thermal expansion coefficient occurs between the core substrate i and the bonding layer 40 and the chip valleyr 20! Internal stress, the core substrate is difficult to generate cracks, peeling, etc., and can achieve high j I Reliability. It can also prevent the occurrence of offset. | Continued, the manufacturing method of the printed circuit board described above with reference to FIG. 7 will be described with reference to FIG. (1) A copper foil 3 is laminated on one side of an i-th resin substrate 30a hardened by impregnating a core material such as a glass cloth having a thickness of 0.1 mm with a bismaleic acid | anhydride di Dfazine (BT) resin. The copper laminated laminate of 2 is used as the starting material (see figure i (I)). Ij I:: Then, on the copper foil 32 side of the steel laminated laminate, pattern etching is performed on the first resin substrate. The conductive pad portion 34 is formed on one side of 30a (see Fig. 1 (B)) ....,

丨#者,不可使用陶瓷和ΑίΝ等的基板為核心基板。該· | 土板外型加工性差,又無法收容電容器,即使以樹脂 i仍會產生空隙。 、 I 2)之後,在導電襯墊部34,使用印刷機而塗佈銲錫丨 #, substrates such as ceramics and ΑΝΝ cannot be used as the core substrate. This · | The soil plate has poor formability and cannot accommodate capacitors. Even with resin i, voids will be generated. After that, I 2), the conductive pad portion 34 is coated with solder using a printer.

2160-3403-?: 第33頁 4^9823 I五、發明說明(30) -- |膠(?&3七6)、導電性膠等的接著材料36(參照第1(^)圖 ’此時’除4塗佈以外,亦可灌注(po 11 i ng)。銲錫膠 可使用 Sn/Pb、Sn/Sb、Sn/Ag、Sn/Ag/Cu 之任一者。於是 ,導電襯墊34間配設樹脂填充劑33 (參照第j (D)圖)。 i J此,如,述可填充在晶片電容器2〇與第1樹脂基板3〇&之 空,i接著,在導電襯墊部34上載置複數個陶瓷組成之晶丨 片電容器20,而經由接著材料36接續至導電襯墊部34上晶丨 f電容器20 (參照第2 ( a )圖)。晶片電容器2 0,一個亦 可’亦可為複數個,但是藉由使用複數個晶片電容器2 〇, 可達成電容器的高集積化。 | (3)接著,準備將玻璃布(cloth)等的心材含浸於環 j I ^樹脂之接著用樹脂層(接著用樹脂層)38a、38b以及含 i浸玻璃布等之心材於Βτ樹脂而硬化之第2樹脂基板3〇b (厚j 度J· 4_ )、第3樹脂基板30c (厚度0· 1mm )。在接著用樹 脂層38a及第2樹脂基板3〇b上形成可收容晶片電容器20的 通孔38 A、30B。首先,在第3樹脂基板30c上經由接著用樹 脂層38b而載置第2樹脂基板30b。接著,在第2樹脂基板 30b上經由接著用樹脂層38a,反轉第1樹脂基板30a而载 j置。也就是,接續於第1樹脂基板3 0a之晶片電容器20向著 接著用樹脂層38a,而以在第2樹脂基板30b形成之通孔收 丨 容晶片電容器20之狀態增疊(參照第2圖(B ))。藉此, 可提供核心基板3〇内可收容晶片電容器,且減低迴路感抗 |的印刷電路板。 ! (4)於是,使用熱擠壓而加壓擠壓增疊之基板,而將ί 499823 五、發明說明(31) 第1、第2、第3樹脂基板30a、30b、30c多層狀一體•化,形 成具有複數個晶片電容器2 0的核心基板3 0 (參照第2 ( C ) 圖)5在此’首先以加壓而在周圍壓出接著用樹脂層 3 8a、3 8b組成之環氧樹脂(絕緣性樹脂),而填充開口 30B與晶片電容器2〇之間的空隙。並且,與加壓同時以加 熱硬化環氧樹脂,以接著用樹脂層38a、38b為接著用樹脂 而介於之間’而強固地接著第1樹脂基板3〇a與第2樹脂基 板3 0 b與第3樹脂基板3 〇 c。再者,本實施例是以從接著用 樹脂層溢出之環氧樹脂而填充開口 3 〇 B内的空隙,但是取 而代之,亦可在開口 3 0 B内配置填充材。 在此’由於核心基板30的兩面是平滑的第1樹脂基板 3 0 a、第3樹脂基板3 0 c,無損於核心基板3 〇的平滑性,在 後述之步驟,可適當地在核心基板3 〇上形成樹脂層4 〇以及 導體電路58,可減低印刷電路板之不良品發生率。此外, 可得到充分強度的核心基板3 0。 (5) 經過上述步驟之基板30,以一邊昇溫至5〇〜15〇 °c 並以壓力5kg/cm2真空壓著層壓,而設置層間樹脂絕緣層 40 (參照第2 (D)圖)°真空壓著時的真空度為1〇_{^。 |2160-3403- ?: Page 33 4 ^ 9823 I. Explanation of the invention (30)-| glue (? &Amp; 37: 6), conductive adhesives, etc. 36 (refer to Figure 1 (^) Figure ' At this time, in addition to 4 coating, it can also be poured (po 11 i ng). The solder paste can use any of Sn / Pb, Sn / Sb, Sn / Ag, Sn / Ag / Cu. Therefore, the conductive pad Resin filler 33 is arranged between 34 (refer to the figure j (D)). I J Here, as described above, the space between the chip capacitor 20 and the first resin substrate 30 can be filled, and then, i. The pad 34 holds a plurality of ceramic capacitors 20 made of ceramic, and is connected to the capacitor 20 on the conductive pad 34 through the bonding material 36 (refer to FIG. 2 (a)). The chip capacitors 20, one It is also possible to use a plurality of capacitors, but by using a plurality of chip capacitors 20, it is possible to achieve a high accumulation of capacitors. | (3) Next, prepare a core material such as glass cloth (impregnated) in the ring j I ^ The second resin substrate 3ob (thickness J · 4_), the third resin, and the third resin, which are hardened with Bτ resin, are made of a resin layer (a resin layer) 38a, 38b and a core material containing i-impregnated glass cloth. Plate 30c (thickness 0.1 mm). Through-holes 38 A and 30B that can accommodate chip capacitors 20 are formed in the subsequent resin layer 38a and the second resin substrate 30b. First, the third resin substrate 30c is passed through The second resin substrate 30b is placed on the resin layer 38b. Then, the first resin substrate 30a is inverted and placed on the second resin substrate 30b via the bonding resin layer 38a. That is, the second resin substrate 30b is connected to the first resin substrate 3 The chip capacitor 20 of 0a is stacked toward the resin layer 38a, and the chip capacitor 20 is accommodated in the through-hole formed in the second resin substrate 30b (refer to FIG. 2 (B)). As a result, the core can be provided. The substrate 30 can house chip capacitors and reduce the circuit inductance of the printed circuit board.! (4) So, using hot extrusion and pressure to squeeze the stacked substrate, and 499823 V. Description of the invention (31 ) The first, second, and third resin substrates 30a, 30b, and 30c are multilayered and integrated to form a core substrate 3 0 having a plurality of chip capacitors 20 (see FIG. 2 (C)) 5 An epoxy resin composed of resin layers 3 8a and 38 Edge resin), and fill the gap between the opening 30B and the chip capacitor 20. In addition, the epoxy resin is hardened by heating at the same time as the pressure, and the resin layers 38a and 38b are then interposed with the resin. The first resin substrate 30a, the second resin substrate 30b, and the third resin substrate 30c are firmly adhered. Furthermore, in this embodiment, the opening 3 is filled with epoxy resin that overflows from the resin layer. The gap in 〇B, but instead, a filler may be arranged in the opening 30B. Here, since both surfaces of the core substrate 30 are the smooth first resin substrate 3 0 a and the third resin substrate 3 0 c, the smoothness of the core substrate 3 is not impaired. In the steps to be described later, the core substrate 3 can be appropriately The formation of the resin layer 4 on the 〇 and the conductor circuit 58 can reduce the incidence of defective products on the printed circuit board. In addition, a core substrate 30 of sufficient strength can be obtained. (5) After the substrate 30 having undergone the above steps, the substrate 30 is heated to 50 ° to 15 °° C and laminated under vacuum at a pressure of 5 kg / cm2, and an interlayer resin insulation layer 40 is provided (see FIG. 2 (D)). The degree of vacuum during vacuum pressing was 10 _ {^. |

I I ΦI I Φ

(6) 接著’以雷射在第1樹脂基板3 〇 a侧的層間樹脂絕 緣層40以及第1樹脂基板30a上形成製導體襯塾部34之介層 窗口用開口 42 (參照第3 (A )圖)。 (7 )於是,以鑽孔或雷射在核心基板3 〇上,形成貫穿 孔用貫通孔44 (參照第3 ( B )圖)。之後使用氧電漿進行 i去殘渣處理。或者以過猛酸等的藥液進行去殘渣處理。(6) Next, an interlayer window opening 42 for forming a conductor bushing portion 34 is formed on the interlayer resin insulating layer 40 and the first resin substrate 30a by a laser (refer to Section 3 (A ) Figure). (7) Then, a through hole 44 is formed in the core substrate 30 by drilling or laser (see FIG. 3 (B)). After that, an oxygen plasma was used to remove the residue. Or use a chemical solution such as peracid to remove the residue.

2160-3403-Fi*ptd 第 35 頁 五、發明說明(32) —接著,使用日本真空技術公司製造的SV-4540進 行^殘,查處,,在核心基板30的全部表面形成粗化面46。 j日,:用虱氣體為惰性氣體而以電力200W、氣體壓力G. 及^ C的條件,實施2分鐘電漿處理。之後,以Ni 及7為乾材$行賤鑛’而在層間樹脂絕緣層4〇的表面形成 二1Λ丄(參照第3 (c)圖)°在此,可使用濺 猎、t可藉由無電解電鍍形成銅、鎳等的金屬 π i、i ^ ί ί在形成濺鍍後,亦可形成無電解電鍍 ’、σ 1咬〆氧化劑施予粗化處理。且,粗化層較佳 b /z m 〇 7 光性(:膜接:載=罩%金屬膜48的表面’貼上市售的感 既定圖案的光阻50 (ί二’而曝光·顯像處理’而形成 板30浸潰於電解電第3_(D )圖)°於是,將核心基 以下列條件在光阻5〇非彤經*Nl—CU金屬層流通電流, 鍍膜52 (參照第4 (A、1^成部施予電解電鍍,形成電解電 一、a 乂 圖)。 [電解電鍍水溶液^ 硫酸 硫酸銅 鍍 層 膜 0· Φ 添加劑 2.24mo1/1 0·26 mol/1 HL ) .y 公司製造的力八5κ 19.5 mo I / 1 1 A / d m2 1 2 0分鐘 [電解電鍍條件] 電流密度 時間2160-3403-Fi * ptd Page 35 V. Description of the Invention (32)-Next, SV-4540 manufactured by Japan Vacuum Technology Co., Ltd. was used to investigate, investigate, and form a roughened surface 46 on the entire surface of the core substrate 30. Day j: Plasma treatment was performed for 2 minutes using lice gas as an inert gas under the conditions of electric power 200W, gas pressure G. and ^ C. After that, Ni and 7 are used as dry materials to form low-grade ore, and the surface of the interlayer resin insulation layer 40 is formed with 2Λ 丄 (see Figure 3 (c)). Here, you can use splash hunting, t After electroless plating forms metals such as copper and nickel π i, i ^ ί After formation of sputter plating, electroless plating may also be formed, and σ1 biting oxidant may be subjected to roughening treatment. In addition, the roughened layer is preferably b / zm 〇7 Photometric (: film connection: load = cover% metal film 48 on the surface of the photoresist 50 with a predetermined pattern on the market, and exposure and development processing 'The forming plate 30 is immersed in the electrolytic cell (3_ (D) diagram). Therefore, a current is flowed through the core base in the photoresistor 50 non-ferrous metal layer * Nl-CU under the following conditions, and the coating 52 (refer to Section 4 ( A, 1 ^ into the electrolytic plating, forming electrolytic electricity (a, a) Figure) [Electrolytic plating aqueous solution ^ copper sulfate copper sulfate coating film 0 · Φ additive 2.24mo1 / 1 0 · 26 mol / 1 HL) .y Company Manufacturing force eight 5κ 19.5 mo I / 1 1 A / d m2 1 2 0 minutes [Electrolytic plating conditions] Current density time

2160-3403-Pf-ptd 第36頁 4998232160-3403-Pf-ptd p. 36 499823

2 2 ± 2 〇C 五、發明說明(33) 溫度 (10)以5 % N a Ο Η剝離除去光阻5 0後,以硝’酸以及硫酸 與過氧化氫的混合液蝕刻該電阻50下的Mi-Cu層48而溶解 |除去,形成Ni-Cu層48與電解銅電鍍膜52所組成之厚度16 I 的貫穿孔56以及導體電路58 (包含介層窗口 60) Γ於 | j疋水洗基板、乾燥後’在基板的兩面吹附上餘刻液,藉由j 餘刻貫穿孔56與導體電路58的表面(包含介層窗口⑽), 而在貝穿孔56以及導體電路58 (包含介層窗口 go)的全部 表面形成粗化面62 (參照第4 ( B )圖)。蝕刻液是使用味 !丨唾銅(I I )複合體1 0重量部、乙二醇酸7重量部、氯化納5 I重量部所組成之蝕刻液 丨 ; (11)在貫穿孔56内填充以環氧樹脂為主成份之樹脂i 填充劑64,進行加熱乾燥(參照第4 (c )圖)。 (12)之後,使用(5)步驟的熱硬化型環氧系樹脂薄板 以一邊昇溫至50〜150°C並以壓力5kg/cm2真空壓著層懕, 而設置層間樹脂絕緣層140 (參照第4 (D )圖)。9真^愚 I著時的真空度為lOmmHg。 〃工g 胃 ! (13)接著在層間樹脂絕緣層140上以雷射形成介 * | 口用開口142 (參照第5 (A )圖)。 ^ 曰窗2 2 ± 2 〇C V. Description of the invention (33) Temperature (10) Peel off the photoresist 50 at 5% N a Η Η, and then etch the resistance 50 times with a mixture of nitric acid and sulfuric acid and hydrogen peroxide The Mi-Cu layer 48 was dissolved and removed | removed to form a 16 I through-hole 56 and a conductor circuit 58 (including the interlayer window 60) composed of the Ni-Cu layer 48 and the electrolytic copper plating film 52. Γ 于 | j 疋 水洗After the substrate is dried, the remaining etching liquid is blown on both sides of the substrate, and the surface of the through-hole 56 and the conductor circuit 58 (including the interposer window 刻) is etched by j, and the through-hole 56 and the conductor circuit 58 (including the dielectric circuit) A roughened surface 62 is formed on the entire surface of the layer window go) (see FIG. 4 (B)). The etching solution is made of taste! 丨 Salt copper (II) composite body is composed of 10 parts by weight, 7 parts by weight of glycolic acid, and 5 parts by weight of sodium chloride. (11) Fill in the through-hole 56 The resin i filler 64 containing epoxy resin as a main component is dried by heating (see FIG. 4 (c)). (12) After that, using the thermosetting epoxy resin sheet of step (5), the interlayer resin insulating layer 140 is provided by heating the layer to 50 to 150 ° C and pressing the layer 真空 under a pressure of 5 kg / cm2 under vacuum (see Section No. 4 (D) figure). The vacuum degree when 9 is true is 10 mmHg. 〃 工 g Stomach! (13) Next, an interlayer resin insulating layer 140 is formed with a laser * | mouth opening 142 (see FIG. 5 (A)). ^ Window

(14)之後’藉由重複上述(8)〜(1Q)之步驟,在展 樹脂絕緣層1 4 0上’形成N i -Cu金屬層1 4 8與電解電鑛腺間 丨組成之厚度16匪的導體電路158 (包含介層窗口 16〇^、152 ;粗化面158α(參照第5(B)圖)。 以及 \ (15)再以重複(12)〜(14)步驟,在上層形成層間樹胪(14) Afterwards, 'by repeating the steps (8) to (1Q) above, the Ni-Cu metal layer 1 4 8 is formed on the resin insulation layer 1 4 0 and the thickness of the electrolytic power ore gland 16 is 16 Bandit's conductor circuit 158 (including vias 160, 152; roughened surface 158α (see Figure 5 (B)). And (15) Repeat steps (12) to (14) to form the upper layer. Interlayer tree shrew

499823 I五、發明說明(34) ί I絕緣層1 4 1及導體電路丨5 9 (包含介層窗口丨g 4 )以芨粗化 !面159 a (參照第5 (c )圖)。 (16)接著’在DMDG以6〇重量%之濃度溶解甲酚酶型 環氧樹脂(曰本化學公司製造)的環氧基5 〇 %於烷基化之 給予感光性之低聚合物(〇1 ig〇mer )(分子量4000 ) : i 46· 67重量部、溶解於曱基乙基酮之8〇重量%之雙酚a型環 |氧樹月旨(油化 >,製造、Epi cote 1001 ) 15. 0重量部、 蜂唾硬化劑(四國化成製造、2E4MZ-CN: ) 1· 6重量部、具 有感光性單體之多價烷基單體(曰本化藥製造、R6 04 ) 3 重量部、相同多價烷基單體(共榮社化學製造、DPE6A ) _ 1 · 5重量部、分散系消泡劑(爹y 乂文3公司製造、S-65 )〇‘ 71重量部於容器中,攪拌混合而調整混合组合物,再 |對上述混合物加入光起始劑二苯基酮(benzophenone) I k關果化學製造)2重量部、光增感劑米其勒酮 jMlchler’ s ketone )(關東化學製造)0· 2重量部,而 付到在2 5 C之黏度調整至2 · 〇 p a · s之銲錫光阻組成物 (有機樹脂絕緣材料)。 再者黏度測定是以B型黏度計(東京計器公司製造, DVL-B型),在6〇 rpm時,轉子ν〇· 4、6 rpm時則為轉工499823 I. Description of the invention (34) I The insulating layer 1 4 1 and the conductor circuit 丨 5 9 (including the interlayer window 丨 g 4) are used to roughen the surface 159 a (refer to Figure 5 (c)). (16) Subsequently, 50% of the epoxy group of the cresolase-type epoxy resin (manufactured by Japan Chemical Co., Ltd.) is dissolved in DMDG at a concentration of 60% by weight in an alkylated, low-sensitivity polymer ( 1 igomer) (molecular weight 4000): i 46.67 parts by weight, 80% by weight of bisphenol a-type ring dissolved in fluorenyl ethyl ketone | Oxygen Mould (Oilification >, Manufacturing, Epi cote 1001) 15. 0 parts by weight, bee sclerosing agent (manufactured by Shikoku Kasei Co., Ltd., 2E4MZ-CN:) 1.6 parts by weight, polyvalent alkyl monomers with photosensitive monomers (manufactured by Benwa Chemicals, R6 04 ) 3 parts by weight, the same polyvalent alkyl monomer (Kyoeisha Chemical Co., Ltd., DPE6A) _ 1 · 5 parts by weight, dispersing defoamer (manufactured by Daimon Daimon 3, S-65) 〇 71 weight In the container, stir and mix to adjust the mixing composition, and then add the photoinitiator benzophenone I (made by Seki Chemical Co., Ltd.) to the above mixture. 2 parts by weight, the photosensitizer Michelinone jMlchler 's ketone) (manufactured by Kanto Chemical) 0.2 parts by weight, and a solder resist composition (with a viscosity of 2 5 C adjusted to 2 · 〇pa · s (with Resin insulating material). In addition, the viscosity measurement is based on a B-type viscosity meter (manufactured by Tokyo Keiki Co., Ltd., DVL-B type). At 60 rpm, the rotor ν ·· 4 and 6 rpm are converted.

丨 No· 3。 * W J (1Ό接著,在基板3 0的兩面,以20/zm之厚度塗佈上 述鲜錫光阻組成物,以70 t 20分鐘、70 °C 30分鐘的條件進 订乾燥處理後,以描繪有銲錫光阻光阻開口部的圖案的# 度5mm光罩密著於銲錫光阻層70而以l〇〇〇m J/cm2紫外線曝τ丨 No · 3. * WJ (1Ό Next, apply the fresh tin photoresist composition on the two sides of the substrate 30 at a thickness of 20 / zm, and then dry the film at 70 t for 20 minutes and 70 ° C for 30 minutes. A # degree 5mm mask with a pattern of solder resist openings is tightly adhered to solder resist layer 70 and exposed to 1000 m J / cm2 ultraviolet rays τ

2160-3403-?f · 〇td 第38頁 499823 五、發明說明(35) 光,以DMTG溶液顯像處輝 t 71U、71D (參照第6 (A)圖:形成200,的直徑的·開口 (1 8 )接著,將形成録 70的基板浸潰於包含氯化錘j阻層(有機樹脂絕緣層) 鈉 α.δχΙΟ—^οΙ/ΐ)、粹^ .3xl〇_lmoi/1)、次亞磷酸 4.5之無電㈣電鍍液中彳^酸/ (=xl〜1/1)、. 成厚度5㈣的鎳電鍍層7 ΓΛ鐘將’ 開σ、71D形 (7.6xl〇、。l/1) ' 二將:亥基板於包含氰化金鉀 _ 士 )、:人亞磷酸鈉(1.7xl〇-imol/:[)之盔電 解電鑛液卜以80 t的條件浸潰7 5分鐘,而在錄電^^ 72上形成厚度〇.03_的金電鍍層74 (參照以⑴圖 (19)之後,在銲錫光阻層7〇的開口部7111、71〇上印 刷銲錫膠,藉由在200它軟溶(refl〇w),而形成銲錫凸塊 | 7t>U、76D。藉此,可得到具有銲錫凸塊7611、76D之印 路板1 0 (參照第7圖)。 接著,參照第8圖而說明將1C晶片載置到完成上述步 驟之印刷電路板1〇以及安裝至子板95。將1(:晶片9〇的鲜"錫 襯塾92P1、92P2對應到完成之印刷電路板10的銲錫凸塊 76U,而載置1C晶片90,以進行軟溶而裝上IC晶片9〇。同 |樣地,將子板95的襯墊94P1、94P2對應到印刷電路板j 〇 的銲錫凸塊76D,以進行軟溶而將印刷電路板丨〇安裝至 板 95 〇 j 上述之樹脂薄膜是含有難溶性樹脂、可溶性粒子2160-3403-? F · 〇td Page 38 499823 V. Description of the invention (35) Light, developed with DMTG solution, t 71U, 71D (refer to Figure 6 (A): 200, diameter, opening (18) Next, the substrate on which the film 70 is formed is immersed in a sodium chloride-containing resist (organic resin insulating layer) sodium α.δχΙΟ— ^ οΙ / ΐ), ^ .3xl0_lmoi / 1), In the electroless plating solution of hypophosphite 4.5, the acid / (= xl ~ 1/1), a nickel plating layer with a thickness of 5 7 7 ΓΛ 钟 将 'open σ, 71D shape (7.6xl0, .l / 1 ) 'Second general: Helium Electrolyte Batteries containing gold cyanide and potassium cyanide) and: Human Sodium Phosphite (1.7xl0-imol /: [) were immersed for 7 5 minutes at 80 t. Then, a gold plating layer 74 having a thickness of 0.03 mm is formed on the recording power 72 (refer to the figure (19), and then a solder paste is printed on the openings 7111 and 710 of the solder resist layer 70. It is melted (refl0w) at 200 to form solder bumps | 7t > U, 76D. Thereby, a printed circuit board 10 having solder bumps 7611 and 76D can be obtained (see FIG. 7). Next, Referring to FIG. 8, description will be given to the 1C wafer to be printed to complete the above steps. The circuit board 10 and the sub-board 95 are mounted. The 1 (: wafer 90's fresh tin linings 92P1 and 92P2 are corresponding to the solder bumps 76U of the completed printed circuit board 10, and a 1C chip 90 is placed thereon. The IC chip 90 is mounted by performing a soft solution. Similarly, the pads 94P1 and 94P2 of the daughter board 95 are corresponding to the solder bumps 76D of the printed circuit board j 〇, and the printed circuit board is subjected to a soft solution. Mounted to the board 95 〇j The above resin film contains hardly soluble resin and soluble particles

2160-3403-Fi -ptd2160-3403-Fi -ptd

化劑、其他成份者,从卜分別加以說 中八tί::$:法使用之樹脂薄m,是在酸或氧化劑 T为散可 >谷性拉子(以下餘失 、^ ^ 化劑中分散難溶性的樹脂(二^粒子),或在酸或氡 再者,所謂本發明;』m容性樹脂)。 在同一時間浸潰於同一種ϋ化二,性」「可溶性」,是 溶解速度快的簡稱&「可、、容=之溶液中時’相對 稱為「難溶性」。/」,而相對溶解速度慢的簡 上述可溶性粒子例如為_ I· 子(以下,可溶性樹脂粒子)4 ^中可溶性的樹脂粒 機粒子(以下、可溶性無機粒“=劑中=性的無 的金屬粒+ (以下、可溶性金“ 子可單獨使用,亦可兩種以上並用τ)等。…浴性粒 例如球狀、碎 樣的形狀。因 片狀c子的形狀並無特別限制 為可^:述可溶性粒子的形狀較佳為 ‘、、、'>:具有平均粗度的凹凸的粗化面。 的範粒徑較佳°.1,-。該粒徑 均粒徑為。二有5兩:以:二同粒徑者。也就是說,含有平 可溶性粒子等可的/二性粒子與平均粒徑卜3㈣的 的密著性亦優良:再者的粗化面,•導體電路 可溶性粒子的最長部分的長^。 …谷性粒子的粒徑是 脂所A溶===熱硬化樹脂、熱可塑性樹 又凊於酸或减劑所組成之溶液時,亦沒有For chemical agents and other ingredients, the following explanations are used in the t :: $: method. The resin thin m used in the method is the acid or oxidant T is Sanco > Gu Lazi (the remaining loss, ^ ^ chemical agent). Disperse poorly soluble resin (two particles), or in acid or hydration, the so-called present invention; "m capacitive resin). At the same time, it is immersed in the same kind of hydration, "soluble", which is the abbreviation of fast dissolving speed & "when it is in solution", which is relatively difficult to dissolve. "", And the above-mentioned soluble particles having a relatively slow dissolving speed are, for example, _ I · particles (hereinafter, soluble resin particles) 4 ^ soluble resin granule particles (hereinafter, soluble inorganic particles "= in the agent = neutral none Metal particles + (hereinafter, soluble gold particles can be used alone, or two or more of them can be used in combination), etc .... bath particles such as spherical and broken shapes. The shape of the flakes is not particularly limited. ^: The shape of the soluble particles is preferably ',,,' >: Roughened surface having unevenness with average thickness. The normal particle size is preferably °. 1,-. The average particle size of the particle size is. There are 5 two: to: two with the same particle size. That is, it contains excellent soluble particles such as flat soluble particles and amphoteric particles with an average particle diameter of 3㈣: the roughened surface, and the conductor The length of the longest part of the circuit-soluble particles.... The particle size of the cereal particles is soluble by the fat. === Thermosetting resin, thermoplastic tree is immersed in a solution composed of acid or reducing agent.

i 五、發明說明(37) 特別限定為比 上述可溶 脂、聚亞醯胺 脂等所組成者 的·樹脂之混和 又,上述 子。上述橡膠 質、(甲基) 有叛基之(甲 之橡膠,可溶 最後,使用酸 的酸溶解,使 化力比較弱的 濃度溶解。因 述般,粗化面 媒,觸媒不會 上述可溶 物、|弓化合物 之群組所組成 上述難 性樹脂 樹脂、 ’亦可 物。 可溶性 可舉例 丙烯腈 基)丙 性樹脂 而溶解 用氧化 過鐘酸 此,在 形成後 氧化。 性無機 、If化 之粒子 溶性樹 粒子的 聚伸笨 選自上 樹脂粒 如聚丁 改質等 稀睛· 粒子變 可溶性 劑溶解 鹽溶解 樹脂表 ’賦予 粒子可 合物、 脂溶解速度 具體例為例 基樹脂、聚 述樹腊之一 子亦可使用 二烯橡膠、 之各種改質 丁 ^—稀橡膠 的溶液溶解 樹脂粒子時 可溶性樹脂 。又,使用 面沒有酸或 氯化把等的 舉例如至少 鎂化合物以 高者。 ·如壞氧樹脂、酚樹 烯樹脂、氟素樹 種 或為兩種以卜 橡膠組 環氧改 聚丁二 等。藉 於酸或 ,亦可 粒子時 鉻酸時 氧化劑 觸媒時 成之樹脂粒 質、胺脂改 烯橡膠、含 由使用上述 氧化劑中。 以強酸以外 ’亦可以氧 ’亦可以低 殘留,如後 ,給予觸 一種選自鋁化合 及矽化合物所組成 上述銘化合物舉例右奴 紅— 可舉例如碳酸㈣、氫氧化4 #風化紹等’上述舞化合物 酸鉀等,上述鎮化合物可n上述卸化合物可舉例如碳 )、氯鹼性碳酸鎂等,上述 f乳、白,石(do1⑽ite (zeonte)等。上述可f Λ合物可舉例如⑦、海石 早獨使用,亦可兩種以上並用。i V. Description of the invention (37) It is particularly limited to a resin / mixture of resins composed of the above-mentioned soluble fats, polyurethanes, and the like. The above-mentioned rubber, (meth) rubber with a methacrylic acid is soluble. Finally, it is dissolved with an acid to dissolve a relatively weak concentration. As a general rule, the surface agent is roughened, and the catalyst is not as described above. The above-mentioned difficult resin resin, which is composed of a group of soluble compounds and | bow compounds, may also be used. Examples of the soluble resin are acrylonitrile-based) acrylic resins. Inorganic inorganic, If-formed particles, the dissolution of the tree particles is selected from thin resin particles such as polybutadiene modification, etc., particles become soluble, soluble agents dissolve salts, and resins are dissolved. For example, a resin based on a resin and a polymer of a polysaccharide can also use a diene rubber or various modified butadiene rubber-soluble rubber solutions to dissolve the resin particles when dissolving the resin particles. In addition, there are no acids or chlorides used, for example, at least the magnesium compound is higher. · Such as bad oxygen resin, phenol resin, fluorine tree species, or two kinds of rubber group, epoxy to polybutadiene, etc. It can also be used by acid or by particles. When it is chromic acid, it is oxidant. When it is catalyst, resin particles, urethane rubber, etc. are used. It can be oxygen or low residue other than strong acid. After that, a compound selected from the group consisting of aluminum compound and silicon compound mentioned above is given as an example. Younu red — for example, thorium carbonate, hydroxide 4 #weathering Shao, etc. ' The above-mentioned compound may be potassium acid, the above-mentioned compound may be carbon, chloro-basic magnesium carbonate, etc., the above-mentioned milk, white, stone (do1⑽ite (zeonte), etc.) may be mentioned, for example ⑦, sea stone early alone, you can also use two or more.

! -- I五、發明說明(38) 上述可溶性金屬粒子可舉例如至少一 鐵二亞鉛 '鉛、金、銀、鋁、鎂鈣 =鋼、鎳、 子寻。又,上述之可溶性金屬粒子,為了侔/組成之粒 可在表層披覆樹脂。 呆、、,邑緣性,亦 上述可溶性粒子混和兩種以上使用 e =粒子的組合較佳為樹脂粒子與無機粒子種的可 導电性皆低,因此可確保樹脂薄膜的ϋ叮兩者 地調整與難溶性樹脂之間的熱膨服,不:發生::;容易 電路間亦不會發生剝離。 間树知絶緣層與導體 士述難溶性樹脂,在層間樹腊絕緣層上使 :!形成粗化面時,只要能保持粗化面的形m特二匕 疋’例如熱硬化樹脂、熱可塑性樹脂、上述之複ς & =Ή為賦予上述樹脂感光性之感光性樹脂。藉由使用 脂’可使用曝光•顯像處理在層間樹脂絕緣層形 成介層窗口用開口。 上述之中,較佳為含有熱硬化樹脂者。藉此,即使以 電鍍液或各種的加熱處理,亦可保持粗化面的形狀。 #产上述難溶性樹脂的具體例為例如環氧樹脂、酚樹脂、 本氧(phenoxy )樹脂、聚亞醯胺樹脂、聚伸笨基 (polyphenylene)樹脂、聚烯烴樹脂、氟素樹脂等。上述 樹脂可單獨使用,或兩種以上並用亦可。 四^進一步,較佳為在丨分子中,具有2個以上的環氧基 之環氧樹脂。可形成前述的粗化面,耐熱性等亦優良,因-I. V. Description of the invention (38) The above-mentioned soluble metal particles may be, for example, at least one lead, dilead, lead, gold, silver, aluminum, magnesium calcium = steel, nickel, and sub-Xun. In addition, the above-mentioned soluble metal particles may be coated with a resin on the surface layer for the purpose of forming particles with a composition. The combination of the above-mentioned soluble particles and the use of two or more kinds of soluble particles. The combination of e = particles is preferred. The resin particles and the inorganic particles are low in conductivity, so the resin film can be ensured in both places. The thermal expansion between the adjustment and the poorly soluble resin does not occur: it is easy to peel off between circuits. The insulation layer and conductor are described as insoluble resin on the interlayer insulation layer. When forming the roughened surface, as long as it can maintain the shape of the roughened surface, such as thermosetting resin, thermoplasticity, etc. Resin, the above compound & = 树脂 is a photosensitive resin which imparts the sensitivity of the above resin. By using the grease, an opening for an interposer window can be formed in the interlayer resin insulating layer by exposure and development processing. Among the above, those containing a thermosetting resin are preferred. Thereby, the shape of the roughened surface can be maintained even with a plating solution or various heat treatments. # Specific examples of the above-mentioned poorly soluble resin are, for example, epoxy resin, phenol resin, phenoxy resin, polyimide resin, polyphenylene resin, polyolefin resin, fluorine resin, and the like. These resins may be used alone or in combination of two or more. Further, an epoxy resin having two or more epoxy groups in the molecule is preferred. It can form the aforementioned roughened surface, and is also excellent in heat resistance, etc.

HI IMI 第42頁 2160-3403-Pi .ptd 499823 五、發明說明(39) ^ = 件下’亦不會在金屬層發生應力的集·中,並 難以引起金屬層的剝離。 1 今逑環氧樹脂可舉例如甲酚酶(cresol)酚醛固形 i^c^Oiak’型%乳樹脂 '雙酚A型環氧樹脂、雙酚f =二紛酴嶋物型環氧樹脂、燒基紛 :型乳 ίίϊ =、具有酚類與酚性氫氧基之芳香族醛之縮4勿 …化物、三環氧(glycidyi)異三聚_ ^ 口物 ayanurate)、腊環式環氧樹脂等。上述可單獨使用 珣種以上並用。藉此可成為耐熱性莫優良者。 ’、了 _ ^發明使用之樹脂薄膜中,上述可溶性粒 上述難溶性樹脂中幾乎平均分散 2為在 的凹凸之粗化面,亦可在樹= 外可不以酸或氧化劑曝光,㈤此可確實二層部以 脂絕緣層之導體電路間的絕緣性。 ”、、、'二由層間樹 上述樹脂薄膜中,分散於難溶性樹脂中 的配合量較佳為樹脂薄膜的3〜4〇重量 .、、☆ ^性粒子 合量未滿3重量%時,無法形成具有所期望了的 面,而超過40重量%時,使用酸或氧 之粗化 子時,不能溶解到樹脂薄膜的深部,而_处:解可溶性粒 薄膜組成之層間樹脂絕緣層之導體電路間由::HI IMI Page 42 2160-3403-Pi.ptd 499823 V. Description of the invention (39) ^ = Under the condition, there will be no stress concentration in the metal layer, and it is difficult to cause the metal layer to peel off. 1 Today's epoxy resins can be cresol phenolic solid i ^ c ^ Oiak 'type Emulsion resin' bisphenol A type epoxy resin, bisphenol f = biphasic type epoxy resin, Burning radicals: type milk ίί 、 =, condensation of aromatic aldehydes with phenols and phenolic hydroxyl groups, etc., tricid (glycidyi) heterotrimer _ 口 物 ayanurate), wax ring epoxy Resin, etc. The above can be used alone or in combination. Thereby, it can be excellent in heat resistance. '、 了 _ ^ In the resin film used in the invention, the above-mentioned soluble particles are almost evenly dispersed in the above-insoluble resin, and the roughened surface is uneven, and it can also be exposed outside the tree with no acid or oxidant. The two-layer part is insulated with a fatty insulating layer between conductor circuits. ",,, '' The interlayer tree resin resin described above, the blending amount dispersed in the poorly soluble resin is preferably 3 to 40 weight percent of the resin film. If the desired surface cannot be formed, and if it exceeds 40% by weight, when using a coarser of acid or oxygen, it cannot be dissolved in the deep part of the resin film, and the _ place: the conductor of the interlayer resin insulation layer composed of the soluble granular film Between circuits ::

2160-3403-Pi.ptd 第43頁2160-3403-Pi.ptd p. 43

短路的原因。 以外上ί t 3 ί Ϊ除了上述可溶性粒子、上述難溶性樹脂 以外較佳為含有硬化劑、其他成份等。 上述硬化劑舉例有蜂唾系硬化劑、 胍 (guanidinej 系硬化齋! 、 h ^ ,^ ^ 上遂硬化劑之環氧加成物 (adduct)^^ capsule)^ ^ ^ 絡獅。Ρ_Γ。ephosphlne)、四酴鱗根(ph〇sph〇nium) · 四酚硼馱鹽(borate)等的有機膦系化合物等。 t述硬化劑之含有量較佳為樹脂薄膜之0 ·0 5〜1 〇重量 0尽,•滿0 · 0 5重量% k ’樹脂薄膜的硬化不充分,因此酸 %劑知入樹脂薄膜的程度增加,而損壞樹脂薄膜的絕 :^。另一方囟,超過10重量%時,過剩的硬化劑成份將 使樹脂之組成變質,而導致可靠性的減低。 上述之其他成份,例如有不影響粗化面的形成之無機 化合物或樹脂等的填充劑。上述無機化合物例如有矽、 鋁、白雲石等,上述樹脂例如有聚亞醯胺樹脂、聚丙烯酸 I樹脂、聚醯胺亞醯胺樹脂、聚伸笨基樹脂、黑素 (melanin)樹脂、烯烴系樹脂等。藉由含有上述之填充 劑’可達到熱膨脹係數的整合以及耐熱性、耐藥品性的增 加等’而提高印刷電路板的性能。 此外,上述樹脂填充劑亦可含有溶劑。上述溶劑例如 有丙酮、甲基乙基酮、環己酮等的酮類,乙基乙酸、丁基 酉文 賽路蘇乙酸鹽(cellosolve acetate)和曱笨、二甲 苯等之芳香族碳氫化合物。上述可單獨使用,亦可2種類Cause of short circuit. In addition to the above, it is preferable to contain a hardener, other components, etc. in addition to the above-mentioned soluble particles and the above-mentioned poorly soluble resin. Examples of the above hardener include bee saliva-based hardener, guanidinej-based hardener !, h ^, ^ ^ adduct ^^ capsule ^ ^ ^ P_Γ. ephosphlne), organophosphine compounds such as tetraphosphonium phosphonium and borate, and the like. The content of the hardener is preferably from 0. 0 to 5 to 0. 0% by weight of the resin film, and 0. 0 to 55% by weight. k 'The resin film is not sufficiently hardened. Therefore, the acid% agent is known to be incorporated into the resin film. The degree is increased, and the resin film is damaged: ^. On the other hand, when it exceeds 10% by weight, an excessive amount of the hardener component deteriorates the composition of the resin, leading to a decrease in reliability. The other components mentioned above include, for example, fillers such as inorganic compounds or resins which do not affect the formation of the roughened surface. Examples of the inorganic compound include silicon, aluminum, dolomite, and the like. Examples of the resin include polyimide resin, polyacrylic acid I resin, polyimide resin, polystyrene resin, melanin resin, and olefin. Department of resin and so on. By including the filler ′ described above, it is possible to achieve integration of thermal expansion coefficients and increase in heat resistance and chemical resistance, etc., thereby improving the performance of printed circuit boards. The resin filler may contain a solvent. Examples of the solvent include ketones such as acetone, methyl ethyl ketone, and cyclohexanone; ethyl acetate, butyl acetophenone, cellosolve acetate, and aromatic hydrocarbons such as benzene and xylene. The above can be used alone or in two types

2160-3403-Pf-ptd 第44頁2160-3403-Pf-ptd Page 44

以上ϋ用。 (實施例1的第1別例) 參照第9圖說明有關本發明之實施例1的第1別例的印 =路板。貫施例1的第1別例的印刷電路板大致與上述實 施例1相同。但是,該第1別例的印刷電路板,是配設導電 性拾296,經由該導電性拴296而取得與子板的接續之狀態 而形成。 又’上述之實施例1,僅備有收容於核心基板30之晶 片電容器20,但是第1別例是在表面及裏面安裝大容量的 晶片電容器8 6。 1C晶片是瞬間消耗大電力而進行複雜的演算處理。在 |此,為了供給至1C晶片大電力,第!別例是在印刷電路板 具備電源兩的晶片電容器20以及晶片電容器86。參照第12 圖而說明該晶片電容器之效果。 第1 2圖,縱軸是供給至丨c晶片的電壓,橫軸為時間。 在此,二點鏈狀線C係顯示不具備電源用電容器之印翁電 路板的電壓變動。未具備電源用電容器的場合,大電壓減 | 4。虛線A係顯示在表面安裝晶片電容器之印刷電路板的 電f變動。與上述二點鏈狀線比較,電壓沒有大幅降低', 但是由於迴路(1〇〇Ρ)長度增加,快速的電源供給無法充分 進行。也就是,電力的供給開始時,電壓下降。此外,來 照第8圖,二點鏈狀線B係顯示内藏上述之晶片電容器的印 刷電路板的電壓下降。迴路長度縮短,但是因為無法在核 |心基板30收容容量大的晶片電容器,電壓變動。在此,^Used above. (First Alternative Example of Embodiment 1) A printed circuit board according to a first alternative example of Embodiment 1 of the present invention will be described with reference to FIG. 9. A printed circuit board according to a first alternative example of the first embodiment is substantially the same as the first embodiment. However, the printed circuit board of the first alternative example is formed by disposing a conductive pickup 296 and obtaining a connection state with a daughter board via the conductive bolt 296. Further, in the above-mentioned first embodiment, only the chip capacitor 20 accommodated in the core substrate 30 is provided, but the first alternative is to mount a large-capacity chip capacitor 86 on the surface and inside. The 1C chip consumes large amounts of power instantly and performs complex calculations. Here, in order to supply large power to 1C chip, No.! Another example is a chip capacitor 20 and a chip capacitor 86 provided on a printed circuit board with both power sources. The effect of this chip capacitor will be described with reference to FIG. 12. In Fig. 12, the vertical axis is the voltage supplied to the c-chip, and the horizontal axis is time. Here, the two-dot chain line C shows the voltage fluctuation of the printed circuit board without the power supply capacitor. If there is no power supply capacitor, the large voltage will be reduced. A dotted line A indicates a change in electric f of the printed circuit board of the surface mount chip capacitor. Compared with the two-point chain line described above, the voltage does not decrease significantly. However, due to the increase in the length of the loop (100), rapid power supply cannot be performed sufficiently. That is, when the supply of electric power is started, the voltage drops. In addition, as shown in FIG. 8, the two-dot chain line B indicates that the voltage of the printed circuit board having the above-mentioned chip capacitor is decreased. The loop length is shortened, but because a large-capacity chip capacitor cannot be accommodated in the core substrate 30, the voltage varies. Here, ^

499823 五、發明說明(42) 線E係顯示參照第9圖之上述核心基板内的晶片電容器2 0, 還有在表面安裝大容量的晶片電容器86之第1別例的印刷 電路板的電壓變動。I C晶片的附近晶片電容器20,還有具 備大容量(即相對大感抗)之晶片電容器8 6,而將電壓變 動壓至最小。 (實施例1的第1改變例) ϊ f I 繼續,參照第11圖說明有關本發明之實施例ϊ的第ϊ改 i變例之印刷電路板的製造方法。 第1改變例的印刷電路板是大致與上述之實施例1相 同。但是第1改變例的印刷電路板1 4,是在第1樹脂基板 30a、第3樹脂基板3 0c的一面上形成導體電路5,而在設置 有收容晶片電容器20之開口 30B的第2樹脂基板3Ob的兩面 上,形成導體電路3 7。該實施例1,是在第1樹脂基板 30a、第3樹脂基板30c的一面形成導體電路35,在第2樹脂 基板30b的兩面形成導體電路37,因此可提高配線密度, 具有可減少增疊之層間樹脂絕緣層的層數之優點。 此外’第1改變例的印刷電路板5晶片電容器2 〇是將 如第13 (A)圖所示之完全剝離第ϊ電極21及第2電極2 2之 |披覆層(未圖示)後以銅電鍍膜29披覆。於是,藉由以銅 |電鍍而成之介層窗口 5〇取得電性接續至銅電鍍膜29彼覆之 第1、第2電極21、22。在此,晶片電容器的電極21、22是 在金屬化組成之比面上的凹凸。相對於此,第1改變例是 藉由鋼電鍍膜29而使第1、第2電極21、22的表面平滑,不 i會發生偏移’亦不會引起電容器電極的不良。 499823 五、發明說明(43) ------ 再者,上述銅電鍍膜29,是在搭栽上印刷電路•板之階 |段,將晶片電容器的製造階段坡覆於金屬層26之表面的鎳 | /錫層剝離而設置。取而代之,在晶片電容器20的製造階 i段,亦可在金屬層26之上直接披覆銅電鍍膜29。也就是 說,第1改變例,以雷射設置到電極的鋼電鍍膜29之開口 後,進行去殘渣等處理,而以銅電鍍形成介層窗口。因 此’在銅電鍍膜29的表面形成氧化膜,因為以上述雷射及 I去殘渣處理除去氧化膜,而可得到適當地接觸。 丨 再者’亦可使用如第13 (B)圖所示除去電容器2〇的 I第i電極21、第2電極22的彼覆28的一部份者。闵糸佶筮飞 電極2卜第2電極22露出可提高接續性/者因為使第1 且’亦可在晶片電容器20的陶瓷組成之誘電體23的表 面上設置粗化層23 α。因此,提高陶瓷組成之晶片電容器 |與樹脂組成之第1樹脂基板3〇a的密著性,即使實施加熱循 I環試驗也不會發生在界面的第1樹脂基板3 〇a之剝離。該粗 |化層23a是在燒成後,藉由研磨晶片電容器2〇的表面,或 在燒成前5施予粗化處理而形成。再者,第1改變例因為 對電容器的表面施予粗化處理,而提高與樹脂的密著性, 但是亦可取而代之在電容器的表面施予矽烷結合(si iane coupl ing)處理。 參照第10及11圖說明本發明之第1改變例的印刷電路 j板的製造步驟。 (1)準備將厚度0· 1mm之玻璃布等的心材含浸於BT樹 脂而硬化之第1樹脂基板3〇a。在第1樹脂基板30a上,於一499823 V. Description of the invention (42) Line E shows the voltage variation of the printed circuit board in the first example of the chip capacitor 20 in the above-mentioned core substrate with reference to FIG. 9 and the large-capacity chip capacitor 86 on the surface. . There are chip capacitors 20 near the IC chip, and chip capacitors 8 6 with a large capacity (that is, relatively large inductive reactance), and the voltage variation is minimized. (First Modified Example of Embodiment 1) ϊ f I Continuing, a method of manufacturing a printed circuit board according to a modified example i of the first embodiment of the present invention will be described with reference to FIG. 11. The printed circuit board of the first modification is substantially the same as the first embodiment described above. However, in the printed circuit board 14 of the first modification, the conductor circuit 5 is formed on one side of the first resin substrate 30a and the third resin substrate 30c, and the second resin substrate is provided with an opening 30B for receiving the chip capacitor 20 Conductor circuits 37 are formed on both sides of 3Ob. In the first embodiment, the conductor circuit 35 is formed on one surface of the first resin substrate 30a and the third resin substrate 30c, and the conductor circuit 37 is formed on both surfaces of the second resin substrate 30b. Therefore, the wiring density can be increased and the overlap can be reduced Advantages of the number of layers of the interlayer resin insulating layer. In addition, the first modified example of the printed circuit board 5 chip capacitor 2 is as shown in FIG. 13 (A). After the third electrode 21 and the second electrode 2 2 are completely peeled off, the coating layer (not shown) Covered with a copper plating film 29. Therefore, the first and second electrodes 21 and 22 electrically connected to the copper plating film 29 are obtained through the interlayer window 50 formed by copper plating. Here, the electrodes 21 and 22 of the chip capacitor have irregularities on the specific surface of the metallized composition. On the other hand, in the first modification, the surface of the first and second electrodes 21 and 22 is smoothed by the steel plating film 29, so that the capacitor electrode is not deflected without causing displacement. 499823 V. Description of the invention (43) ------ Furthermore, the above-mentioned copper plating film 29 is a stage of the printed circuit board mounted on the substrate, and the manufacturing stage of the chip capacitor is covered on the metal layer 26. The nickel / tin layer on the surface is peeled away. Alternatively, at the stage i of the manufacturing stage of the chip capacitor 20, the copper plating film 29 may be directly coated on the metal layer 26. That is, in the first modification, a laser is provided to the opening of the steel plated film 29 of the electrode, and then a residue removal process is performed to form a via window by copper plating. Therefore, an oxide film is formed on the surface of the copper plating film 29, and the oxide film is removed by the above-mentioned laser and I residue removal treatment, so that proper contact can be obtained.丨 Furthermore, as shown in FIG. 13 (B), a part of the i-th electrode 21 and the second electrode 22 of the second electrode 22 with the capacitor 20 removed may be used. Min Yefei The exposure of the second electrode 22 and the second electrode 22 can improve the continuity, because a roughened layer 23 α can also be provided on the surface of the electric capacitor 23 of the ceramic capacitor of the chip capacitor 20. Therefore, the chip capacitor with ceramic composition and the first resin substrate 30a with a resin composition are improved in adhesion, and even if the heating cycle I test is performed, the first resin substrate 30a does not peel off at the interface. This roughened layer 23a is formed by polishing the surface of the wafer capacitor 20 after firing, or by roughening it 5 before firing. In addition, the first modified example improves the adhesion with the resin by roughening the surface of the capacitor, but may instead apply a silane coupling treatment to the surface of the capacitor. The manufacturing steps of the printed circuit board according to the first modified example of the present invention will be described with reference to Figs. 10 and 11. (1) A first resin substrate 30a is prepared by impregnating a core material such as glass cloth having a thickness of 0.1 mm with BT resin and hardening it. On the first resin substrate 30a,

2160-3403-Fi-ptd 第47頁 4998232160-3403-Fi-ptd p. 47 499823

1五、發明說明(44) 面形成導電襯墊部34,另一面形成導體電路35。接著在導 電襯墊部34銲錫複數個晶片電容器20,經由導電性膠等的 接著材料36而載置,接續晶片電容器20至導電襯墊部34 (參照第1 0 ( A )圖)。 I 、2)接者’準備將玻璃布等的心材含浸於環氧樹脂之 I接著罔樹脂層(接著甩樹脂層)38 a、38b以及含浸玻^布 等之心材於BT樹脂而硬化之第2樹脂基板3 0b (厚度〇 4mm )、第3樹脂基板30c (厚度0· 1mm )。在接著用樹脂層38a |及第2樹脂基板3 0 b上形成可收容晶片電容器2 〇的通孔 m |38八、3(^。此外,在第2樹脂基板301)的兩面上形成導體電 !路37 ’在第3樹脂基板30c的一面形成導體電路35。首先, I在第3樹脂基板30c之未形成導體電路3 5的面上,經由接著 用树月曰層38b而載置第2樹脂基板30b。在第2樹脂基板3〇b 上經由接著用樹脂層38a,反轉第1樹脂基板3〇a而載置。 也就是’接續於第1樹脂基板3 〇 a之晶片電容器2 〇向著接著 用樹脂層38a,而以在第2樹脂基板30b形成之通孔收容晶 片電容器2 0之狀態增疊(參照第1 〇圖(b ))。 (3)於是,使用熱擠壓而加壓擠壓重疊合之基板,而 將第1、第2、第3樹脂基板30a、30b、30c多層狀一體化, 形成具有複數個晶片電容器2 〇的核心基板3 〇 (參照第1 〇 | (C)圖)。首先,以加壓而在周圍壓出接著用樹脂層 1 3 8 a、3 8 b組成之環氧樹脂(絕緣性樹脂),而填充開口 ! 30B與曰曰片電谷斋20之間的空隙。並且,與加壓同時以加 |熱硬化壞氧樹脂’以接著用樹脂層3 8 a、3 8 b為接著用樹脂15. Explanation of the Invention (44) A conductive pad portion 34 is formed on one side, and a conductor circuit 35 is formed on the other side. Next, a plurality of chip capacitors 20 are soldered to the conductive pad portion 34 and placed on the conductive pad portion 34 via a bonding material 36 such as a conductive adhesive, and the chip capacitors 20 are connected to the conductive pad portion 34 (see FIG. 10 (A)). I, 2) The recipient's heart is prepared by impregnating the heartwood such as glass cloth with epoxy resin, and then the resin layer (then the resin layer is dipped) 38a, 38b and the heartwood impregnated with glass cloth and other materials are hardened with BT resin. 2 resin substrate 30b (thickness: 0.4mm), and third resin substrate 30c (thickness: 0.1mm). On the subsequent resin layer 38a | and the second resin substrate 3 0 b, a through hole m | 38 3, 3 (^.) For accommodating the chip capacitor 20 is formed on both sides of the second resin substrate 301. ! 路 37 'A conductor circuit 35 is formed on one surface of the third resin substrate 30c. First, the second resin substrate 30b is placed on the surface of the third resin substrate 30c on which the conductor circuit 35 is not formed, followed by a tree-moon layer 38b. The first resin substrate 30a is inverted and placed on the second resin substrate 30b via the resin layer 38a for bonding. In other words, the chip capacitor 20 connected to the first resin substrate 30a is stacked toward the resin layer 38a, and the chip capacitor 20 is accommodated in the through-hole formed in the second resin substrate 30b (see No. 10). (B)). (3) Then, the overlapped substrates are pressed by hot pressing, and the first, second, and third resin substrates 30a, 30b, and 30c are integrated in multiple layers to form a plurality of chip capacitors. 2 Core substrate 3 〇 (refer to Figure 1 〇 | (C)). First, an epoxy resin (insulating resin) composed of resin layers 1 3 8 a and 3 8 b is pressed out by pressing around, and the opening is filled! . In addition, at the same time as pressing, a thermosetting bad oxygen resin ’is added, and the resin layers 3 8 a and 3 8 b are used as the bonding resin.

2160-3403-?]-ptd 第48頁 499823 五、發明說明(45) !叩’!於之間,而強固地接著第}樹脂基板3〇a與第2蘅脂基 《板30b與第3樹脂基板3〇c。2160-3403-?]-Ptd page 48 499823 V. Description of the invention (45)! 叩 ’! In between, the third resin substrate 30a and the second resin-based substrate 30b and the third resin substrate 30c are firmly adhered.

經過上述步驟之基板30,以一邊昇溫至5 0〜150 °C 並以,力5kg/cm2真空壓著層壓,而設置層間樹脂絕緣層 4 0 (麥照第1 0 ( D )圖)。真空壓著時的真空度為 lOmmHg 〇 (5 )接者,在基板3 〇的上面及下面,以雷射形成接續 至導體襯墊部34及導體電路35、37之介層窗口用開口42 (參照第1 0 ( E )圖)。 以下的步驟與上述之實施例1的(7)〜(丨9)相同,因此 省略說明。 (實施例1的第2改變例) 繼續’參照第1 4圖說明有關實施例1之第2改變例的印 刷電路板的構成。 該第2改變例的印刷電路板之構成,是大致與實施例1 相同。但是收容至核心基板3 〇的晶片電容器2 〇不一樣。第 ! 1 4圖係顯示晶片電容器的平面圖。第1 4 ( A )圖係顯示多 數個取用之裁斷前的晶片電容器,圖中一點鏈狀線係顯示 裁斷線。上述之實施例1之印刷電路板是如第1 4圖(B )之 平面圖所示之狀態而在晶片電容器的側緣配設第1電極21 及第2電極2 2。第1 4 ( C )圖係顯示第2改變例之多數個取 用的晶片電容器,圖中一點鏈狀線係顯示裁斷線。第2改 變例的印刷電路板是如第1 4圖(D )之平面圖所示之狀態 而在晶片電容器的側緣配設第1電極21及第2電極22。After passing through the above steps, the substrate 30 is heated to 50 to 150 ° C and laminated with a vacuum pressure of 5 kg / cm2, and an interlayer resin insulation layer 40 is provided (Mai Zhao No. 10 (D)). The vacuum degree at the time of vacuum pressing is 10 mmHg 〇 (5). On the top and bottom of the substrate 30, a laser is used to form an opening 42 for an interposer window connected to the conductor pad portion 34 and the conductor circuits 35 and 37 ( Refer to Figure 10 (E)). The following steps are the same as (7) to (9) of the above-mentioned first embodiment, so the description is omitted. (Second Modified Example of Embodiment 1) The configuration of a printed circuit board according to a second modified example of Embodiment 1 will be described with reference to Figs. The structure of the printed circuit board of the second modification is substantially the same as that of the first embodiment. However, the chip capacitor 2 stored in the core substrate 3 is different. Figure 14 shows a plan view of a chip capacitor. Figure 14 (A) shows a plurality of chip capacitors taken before cutting, and a chain line in the figure shows the cutting line. In the printed circuit board of the first embodiment described above, the first electrode 21 and the second electrode 22 are arranged on the side edges of the chip capacitor as shown in the plan view of FIG. 14 (B). Fig. 14 (C) shows a plurality of chip capacitors used in the second modification. A chain line in the figure shows a cut line. In the printed circuit board of the second modification, the first electrode 21 and the second electrode 22 are arranged on the side edges of the chip capacitor as shown in the plan view of FIG. 14 (D).

2160-3403-Ff-ptd 第49頁 499823 「五、發明説明(46) ’ - ! _改變例的印刷電路板是使用纟外緣之内側形成 |電極的晶片電容1120,因此可使用容量大的晶片電容哭。 繼續,將參照第15圖說明第2改變例之第丨別例的 電路板。2160-3403-Ff-ptd Page 49 499823 "Fifth, the description of the invention (46) '-! _ The printed circuit board of the modified example uses the chip capacitor 1120 formed on the inner side of the outer edge of the 纟, so a large capacity can be used. The chip capacitor cries. Continuing, a circuit board of a second modification of the second modification will be described with reference to FIG. 15.

第1 5圖係顯示第i別例之印刷電路板的核心基板上所 收容之晶片電容器20的平面圖。上述之實施例1是在核心 基板上收容複數個小容量的晶片電容器,但是第1別例是 在核心基板上收容大容量的大型的晶片電容器2 0。在此, 晶片電容器20是由第1電極21與第2電極22,與誘電體23, 接續至第1電極21之第1導電膜24 ’與接續至第2電極22侧 之第2導電膜25,與沒有接續至第1導電膜24及第2導電膜 丨2b的晶片電容器的上下面之接續用之電極27所組成。經由 I該電極2 7而接續IC晶片側與子板。 ^ 5爹弟1改變例之印刷電路板因為是使用大型的晶片電 |谷裔20 ’可使用容量大的晶片電容器。此外,因為使用大 型的晶片電容器2 0,即使重複加熱循環,在印刷電路板亦 不會發生彎曲。Fig. 15 is a plan view showing a chip capacitor 20 housed on a core substrate of a printed circuit board of the i-th example. In the first embodiment described above, a plurality of small-capacity chip capacitors are housed on a core substrate, but the first other example is a large-capacity large-scale chip capacitor 20 being housed on a core substrate. Here, the chip capacitor 20 includes a first conductive film 24 ′ connected to the first electrode 21 and a second electrode 22, and an electric inducer 23, and a second conductive film 25 connected to the second electrode 22 side. It is composed of electrodes 27 for connection to the upper and lower surfaces of the chip capacitor which are not connected to the first conductive film 24 and the second conductive film 2b. The IC chip side and the daughter board are connected through the electrodes 27. ^ The printed circuit board of the modified example of 5 daddy 1 is because a large-scale chip is used. Gu Yi 20 ′ can use a large-capacity chip capacitor. In addition, because a large chip capacitor 20 is used, even if the heating cycle is repeated, the printed circuit board does not bend.

參照第1 6圖而說明第2別例之印刷電路板。第1 6 ( A ) 圖係顯示多數個取用之晶片電容器,圖中一點鏈狀線係顯 |示一般的裁斷線,第16 (B)圖係顯示晶片電容器的平面 圖。如第1 6 ( B )圖所示,該第2別例是以連結複數個(圖 中之範例為3枚)多數個取用之晶片電容器而以大型使 用0The printed circuit board of the second alternative example will be described with reference to FIG. 16. Figure 16 (A) shows most of the chip capacitors taken out. A chain line in the figure shows the general cutting line. Figure 16 (B) shows the plan view of the chip capacitor. As shown in Fig. 16 (B), this second example uses a large number of chip capacitors connected to a plurality (the example in the figure is three) and uses a large-scale chip capacitor.

2160-3403-ff.〇td 第50頁 容量大的晶片電容 20,即使重複加熱掂L此外’因為使用大型的晶片•電容器 上述之實施例,,/在印刷電路板亦不會發生彎曲。 内,但是亦可使用二是將晶片電容器内藏於印刷電路板 以取代晶片電i器。陶瓷板設置導電體膜之板狀的電容器 根據實施例1之製 器,可縮短1C晶片鱼\ —方#法,可在核心基板内收容電容 的迴路感技。+从/、兒谷态之距離,而可減低印刷電路板 心基板:並且\因发積層樹脂基板而可得到充分強度的核 板、繁q1上為在核心基板的兩面配設第1樹脂基 :板平滑構成核心基板,因此可在核心 #双2外由於在核心基板與電容器間填充樹脂,因此即 使發生起因於電容器之應力,可被緩和而不會發生偏移。 ,^ =會影響電容器之電極與介層窗口的接續部的玻璃和 溶解等。因此實施信賴性試驗,亦可保持所期望的性能。 又’在以銅披覆電容器之場合,亦可防止偏移的發 生0 (實施例2 ) ! 首先’參照第19、20圖說明有關本發明之實施例2的 !印刷電路板。第19圖係顯示印刷電路板210的剖面,第2〇 j圖係顯示第7圖所示之印刷電路板2 10上載置iC晶片29〇, 而安裝在子板295之侧的狀態。 如第1 9圖所示之印刷電路板21 0是由收容複數個晶片2160-3403-ff.〇td Page 50 Large-capacity chip capacitors 20, even if the heating is repeated. In addition, because of the use of large-sized wafers and capacitors, the above-mentioned embodiment does not bend on the printed circuit board. However, it is also possible to use a chip capacitor built in a printed circuit board instead of a chip capacitor. A plate-shaped capacitor in which a conductive film is provided on a ceramic plate. According to the device of the first embodiment, the 1C chip method can be shortened, and the capacitor's circuit sense can be stored in the core substrate. + The distance from /, the valley state can reduce the core substrate of the printed circuit board: and the core board can be obtained with sufficient strength due to the laminated resin substrate. On the q1, the first resin base is arranged on both sides of the core substrate. : The plate forms the core substrate smoothly, so the core #double 2 can be filled with resin between the core substrate and the capacitor. Therefore, even if stress due to the capacitor occurs, it can be alleviated without shifting. , ^ = Will affect the glass and dissolution of the junction between the capacitor electrode and the interlayer window. Therefore, reliability tests can be performed to maintain desired performance. Also, when the capacitor is coated with copper, the occurrence of offset can be prevented (Embodiment 2)! First, a printed circuit board according to Embodiment 2 of the present invention will be described with reference to Figs. 19 and 20. FIG. 19 shows a cross section of the printed circuit board 210, and FIG. 20j shows a state where the iC chip 29 is mounted on the printed circuit board 210 shown in FIG. 7 and is mounted on the side of the daughter board 295. The printed circuit board 21 0 shown in FIG. 19 is composed of a plurality of wafers.

2160-3403-Pi ptd 第51頁 499823 五、發明說明(48)2160-3403-Pi ptd Page 51 499823 V. Description of the Invention (48)

電容器220之核心基板230與增疊配線層280A、280B所組 成°增疊配線層28(^與增疊配線層28(^是經由貫穿孔2 56 而接續。增疊配線層280A、280B是由層間樹脂絕緣層 240、340所組成。上側的增疊配線層28〇a側的層間樹脂絕 緣層240上形成接續至導體電路358以及晶片電容器220之 第1電極221與第2電極222之介層窗口 260,而層間樹脂絕 緣層340上形成有導體電路3 58以及介層窗口 360。另一方 面’下側的增疊配線層280B側的層間樹脂絕緣層240上形 成導體電路258,而層間樹脂絕緣層340上形成有導體電路 358以及介層窗口 360。在增疊配線層280 A、280B的層間樹 脂絕緣層340之上,形成有銲錫光阻層27〇。 晶片電容器220是由第19圖所示之第1電極221與第2電 極222,與夾住第1、第2電極之誘電體23所組成,在誘電 體23上相對配置複數牧接續於第1電極221侧之第1導電膜 224,與接續於第2電極222側之第2導電膜225。 如第20圖所示,上侧的增疊配線層28〇a上配設著用以 接續至1C晶片290的襯墊292E、292P、292S的銲錫凸塊 276U。另一方面,在丁側的增疊配線層28〇β上則形成用以 接續至子板295的襯墊294E、294P,294S之銲錫凸塊 276D。 * 如第20圖所示之1C晶片290的信號用的襯墊292S是經 由凸塊276U-導體電路358-介層窗口 360-貫穿孔256-介層二 ® 口 360 -銲锡凸塊276D而接續至子板295之信號用的襯墊 294S。The core substrate 230 of the capacitor 220 and the overlay wiring layers 280A and 280B are formed by the overlay wiring layer 28 (^ and the overlay wiring layer 28 (^ are connected through the through-holes 2 56. The overlay wiring layers 280A and 280B are formed by Interlayer resin insulation layers 240 and 340. Interlayer resin insulation layer 240 on top of superimposed wiring layer 28a is formed as a dielectric layer that is connected to conductor circuit 358 and first electrode 221 and second electrode 222 of chip capacitor 220. The window 260 and the interlayer resin insulating layer 340 are formed with the conductor circuit 3 58 and the interlayer window 360. On the other hand, the conductor circuit 258 is formed on the interlayer resin insulating layer 240 on the side of the superimposed wiring layer 280B side, and the interlayer resin A conductor circuit 358 and a via window 360 are formed on the insulating layer 340. A solder photoresist layer 27 is formed on the interlayer resin insulating layer 340 of the stacked wiring layers 280 A and 280B. The chip capacitor 220 is shown in FIG. 19 The first electrode 221 and the second electrode 222 shown are composed of an electrophoretic body 23 sandwiching the first and second electrodes, and a plurality of first conductive films connected to the first electrode 221 are arranged on the electromotive body 23 oppositely. 224, connected to the second electrode 222 side The second conductive film 225. As shown in FIG. 20, a solder bump 276U of pads 292E, 292P, and 292S for connecting to the 1C chip 290 is arranged on the upper layer of the wiring layer 28a. On the other hand, solder bumps 276D for pads 294E, 294P, and 294S that are connected to the daughter board 295 are formed on the superimposed wiring layer 28〇β on the D side. * As shown in FIG. 20, the signal of the 1C chip 290 The pad 292S used is a pad 294S for signal connection to the daughter board 295 via the bump 276U-conductor circuit 358-interlayer window 360-through hole 256-interlayer two® port 360-solder bump 276D.

499823 五、發明說明(49) Π 1C晶片290之接地用襯墊292E是經由凸塊276 U:介層 窗口 360-導體電路2 5 8 -介層窗口 260而接續至晶片電容器 220的第1電極221。另一方面,子板295之接地用襯墊 294E是經由凸塊2 76D-介層窗口 360 -貫穿孔2 56 -介層窗口 260而接續至晶片電容器220的第2電極222。 I iC晶片290的電源用的襯墊29 2P是經由凸塊276U-介 !層窗口360-導體電路258 -介層窗口 260而接續至晶片電容 :器220的第2電極222。另一方面,子板295的電源用的襯墊 29 4P是經由凸塊276D-介層窗口 360 -貫穿孔256-介層窗口 260而接續至晶片電容器220的第2電極222。 如第1 9圖所示,本實施例的核心基板230,是由第1樹 傷 脂基板230a,與經由接著用樹脂層(接著板)238a而接續j |至第1樹脂基板230a之第2樹脂基板230b,與經由接著用樹I |脂層(接著板)238b而接續至第2樹脂基板230b之第3樹脂 基板23 0c所組成。此外,在第1樹脂基板23〇a、第2樹脂基 板230b、第3樹脂基板230c上以埋頭孔(counterbore)加工 形成可收容晶片電容器220之凹部334,而在凹部334上收 容晶片電容器220。499823 V. Description of the invention (49) The pad 292E for grounding of the 1C chip 290 is connected to the first electrode of the chip capacitor 220 via the bump 276 U: interlayer window 360-conductor circuit 2 5 8-interlayer window 260 221. On the other hand, the ground pad 294E of the daughter board 295 is connected to the second electrode 222 of the chip capacitor 220 via the bump 2 76D-the via window 360 -the through hole 2 56 -the via window 260. The pad 29 2P for the power supply of the IC chip 290 is connected to the second electrode 222 of the chip capacitor 220 via the bump 276U-interlayer window 360-conductor circuit 258-interlayer window 260. On the other hand, the pad 29 4P for power supply of the daughter board 295 is connected to the second electrode 222 of the chip capacitor 220 via the bump 276D-the via window 360-the through hole 256-the via window 260. As shown in FIG. 19, the core substrate 230 of this embodiment is connected to the second resin substrate 230a from the first resin substrate 230a to the second resin substrate 230a through the first resin substrate (adhesive plate) 238a. The resin substrate 230b is composed of a third resin substrate 230c that is connected to the second resin substrate 230b via the adhesive resin layer I (adhesive plate) 238b. In addition, the first resin substrate 23a, the second resin substrate 230b, and the third resin substrate 230c are processed with counterbore to form a recessed portion 334 that can accommodate the chip capacitor 220, and the recessed portion 334 accommodates the chip capacitor 220.

藉此’可在核心基板230内收容晶片電容器220,而能 縮短IC晶片2 9 0與晶片電容器2 2 0的距離,因此可減低印刷 電路板21 0的迴路感抗。此外,由於是在兩面配設導體電 路235之第1樹脂基板230a、第2樹脂基板230b、第3樹脂基 板230c積層而形成核心基板23〇,因此可提高核心基板23〇 |Thereby, the chip capacitor 220 can be accommodated in the core substrate 230, and the distance between the IC chip 290 and the chip capacitor 220 can be shortened, so that the loop inductance of the printed circuit board 210 can be reduced. In addition, the core substrate 23 is formed by laminating the first resin substrate 230a, the second resin substrate 230b, and the third resin substrate 230c on which conductor circuits 235 are arranged on both sides, thereby improving the core substrate 23〇 |

内的配線密度’並可減少層間樹脂絕緣層的層數。 I I § ΙΚΒΙΙ ΙΗ1Ι 2160-3403-?i-pid 第53頁 499823 五、發明說明(50) I 此外’貫施例2 ’如第1 8圖(A )所示,以接著劑2 3 6 j介於核心基板230的通孔34的下面與晶片電容器22〇之間,The internal wiring density 'can also reduce the number of interlayer resin insulating layers. II § ΙΚΒΙΙ ΙΗ1II 2160-3403-? I-pid Page 53 499823 V. Description of the invention (50) I In addition, "exemplary 2" is shown in Fig. 18 (A), and the adhesive 2 3 6 j is introduced Between the lower surface of the through hole 34 of the core substrate 230 and the chip capacitor 22

^而在通孔337之側面與晶片電容器22〇之間填充樹脂填充劑 | 2 3 3。在此’接著劑2 3 6及樹脂填充劑2 3 6的熱膨脹率比核 心基板2 3 0小’也就是設定在陶瓷組成之電容器2 2 〇的附 近。因此在加熱循環試驗,在核心基板2 3 〇與晶片電容器 220之間即使發生熱膨脹率造成之内應力核心基板23〇也I 難以產生裂痕、剝離等,而能達成高信賴性。並, I !止偏移的發生。 | 繼續’參照第1 7〜1 9圖而說明有關參照第丨9圖而上述 之印刷電路板的製造方法。 (1)將厚度0·3 mm之玻璃布等的心材含浸於βτ樹脂而 硬化之樹脂基板231a的兩面層壓銅箔232之銅張積層板 | !231M做為出發材料(參照第17(八)圖)。將該銅貼積層i j板23 li的銅箔232,藉由以圖案狀姓刻,在兩面上形成具 備導體電路235的第1、第2、第3樹脂基板23〇a、23〇b、 23 0c (第17 (B )圖)。於是,將第3樹脂基板23〇c與第2 樹脂基板230b經由玻璃布等之心材含浸於環氧樹脂之接著 ,1脂層238b而積層。同樣地,將第2樹脂基板23吒與第1 Μ月曰基板230a經由接著用樹脂層238a而積層。(第17 (c ϋ )圖)。 再者’不可使用陶瓷和ΑίΝ等的基板為核心基板。該 基板外型加工性差,又無法收容電容器,即使以樹脂填充 仍會產生空隙。 、^ Fill the resin filler between the side of the through hole 337 and the chip capacitor 22. 2 3 3. Here, "the thermal expansion coefficient of the adhesive 2 3 6 and the resin filler 2 3 6 is smaller than that of the core substrate 2 3 0", that is, set near the capacitor 2 2 0 of the ceramic composition. Therefore, in the heating cycle test, even if internal stress caused by the thermal expansion coefficient occurs between the core substrate 230 and the chip capacitor 220, the core substrate 23 is less likely to generate cracks and peeling, and high reliability can be achieved. And, I! Stops the offset from occurring. Continued 'The method of manufacturing the printed circuit board described above with reference to Figs. 9 to 9 will be described with reference to Figs. (1) Copper sheet laminates with copper foil 232 laminated on both sides of a resin substrate 231a hardened by impregnating βτ resin with a core material such as glass cloth with a thickness of 0.3 mm |! 231M as the starting material (refer to Section 17 (Eight ) Figure). The copper foil 232 of this copper laminated layer ij plate 23 li is engraved with a pattern-like surname to form first, second, and third resin substrates 23a, 23b, and 23 having a conductor circuit 235 on both sides. 0c (Figure 17 (B)). Then, the third resin substrate 23c and the second resin substrate 230b are impregnated with a core material such as glass cloth and impregnated with an epoxy resin, and then a fat layer 238b is laminated. Similarly, the 2nd resin substrate 23A and the 1st month substrate 230a are laminated | stacked via the adhesive resin layer 238a. (Figure 17 (c ϋ)). Furthermore, substrates such as ceramics and ΑΝΝ cannot be used as the core substrate. This substrate has poor formability and cannot accommodate capacitors. Even if it is filled with resin, voids are generated. ,

第54頁 499823 五、發明說明(51) (2)於是,使用熱擠壓而加壓擠壓重疊合之基#板,而 將第1、第2、第3樹脂基板230a、2 30b、230c多層狀一體 化,形成核心基板230 (參照第17 (D )圖)。在此,首先 以加壓而在周圍壓出接著用樹脂層238a、238b之環氧樹脂 (絕緣性樹脂)5而使第1、第2、第3樹脂基板230a、 2 3 0 b、2 3 0 c密著。此外,藉由與加壓同時以加熱硬化環氧 樹脂,以接著用樹脂層238a、238b為接著板而介於其間, 而強固地接著第1樹脂基板2 30a與第2樹脂基板230b與第3 樹脂基板230c。 I (3)接著,在核心基板2 30上,以埋頭孔加工形成收Page 54 499823 V. Description of the invention (51) (2) Then, the superimposed base # plates are pressed by hot pressing and the first, second, and third resin substrates 230a, 2 30b, and 230c are pressed. The multilayer substrate is integrated to form a core substrate 230 (see FIG. 17 (D)). Here, firstly, the epoxy resin (insulating resin) 5 using the resin layers 238a and 238b is then pressed out by pressing to make the first, second, and third resin substrates 230a, 2 3 0 b, 2 3 0 c close. In addition, the epoxy resin is hardened by heating at the same time as the pressure, and the resin layers 238a and 238b are used as bonding plates therebetween, and the first resin substrate 2 30a and the second resin substrate 230b and the third Resin substrate 230c. I (3) Next, the core substrate 2 30 is processed by countersinking to form a receiver.

容晶片電容器220兩之凹部334 (第17圖(E))。在此, 藉由埋頭孔加工而設置電容器收容用之凹部,但是亦可藉 由貼合設有開口之絕緣樹脂基板與未設開口之樹脂絕緣基 板’而形成具備收容部之核心基板。 (4)之後,在凹部334的底面,使用印刷機而塗佈熱 j硬化系或UV硬化系的接著材料2 36 (第18 (A)圖)。此 時’除了塗佈以外,亦可灌注等。 接著’在接著材料236上載置晶片電容器220 (第18 胃(Bj圖)。晶片電容器22〇可為一個,亦可為複數個,但The concave portions 334 of both the capacitor capacitors 220 (FIG. 17 (E)). Here, a recessed portion for accommodating a capacitor is provided by countersinking, but a core substrate including a accommodating portion may be formed by bonding an insulating resin substrate provided with an opening and a resin insulating substrate without an opening. (4) Then, the bottom surface of the recessed portion 334 is coated with a thermal j-curing or UV-curing bonding material 2 36 using a printer (Fig. 18 (A)). In this case, 'in addition to coating, it may be poured. Next ', a chip capacitor 220 is placed on the bonding material 236 (No. 18 stomach (Bj picture). The chip capacitor 22 may be one or plural, but

疋藉由使用複數個晶片電容器2 2 〇 5可達到電容器的高集 積化。 (、5)之後’在凹部334内5填充熱硬化性樹脂,加熱 ,化而形成樹脂層233 (第1 8 ( C )圖)。此時,熱硬化性 樹脂較佳為環氧、酚、聚咪唑、三哄。藉此,固定在凹部(2) By using a plurality of chip capacitors 2205, a high integration of the capacitor can be achieved. (, 5) After that, the thermosetting resin is filled in the recessed portion 334, and heated to form a resin layer 233 (Fig. 18 (C)). In this case, the thermosetting resin is preferably epoxy, phenol, polyimidazole, or trioxane. Thereby, it is fixed to the recess

2160-3403-Fi.ptd 第55頁 499823 五、發明說明(52) 334内的晶片電容器220,而填充晶片電容器220與凹部334 的壁面間的空隙。 (6)經過上述步驟之基板2 30,以一邊昇溫至50〜150 I °C並以壓力5kg/cm2真空壓著層壓,而設置層間樹脂絕緣 I層240 (參照第18 (D)圖)。真空壓著時的真空度為 I lOmmHg ° 以後之步驟,與上述實施例1的(7)〜(9)相同,因此省 略說明。 接著,參照第20圖說明有關將IC晶片290載置於完成 上述步驟之印刷電路板21〇以及安裝至子板295。將完成之j 印刷電路板210的銲錫凸塊276U,對應1C晶片290之銲錫襯|搴 i墊29 2E '29 2P、29 2S,而載置ic晶片290,以軟溶進行ic , 晶片2 9 0的安裝。同樣地,將印刷電路板21 〇的銲錫凸塊 276D,對應子板295之銲錫襯墊294E、294P、294S,以軟 溶進行安裝印刷電路板至子板2 9 5上。 形成上述之層間樹脂絕緣層240、340之熱硬化型環氧j 樹脂薄板是含有難溶性樹脂、可溶性粒子、硬化劑、其他| 丨成份。個別與上述之實施例1相同,因此省略說明。 (實施例2之第1改變例) 接著,參照第23圖說明本發明之實施例2的第i改變例 之印刷電路板212。上述之實施例2,是以配設BGA之場人 說明。該實施例2之第1改變例的構成是經由導電性 " 296而接續PGA方式而構成。 此外,上述之實施例2。以埋頭孔加工在核心基板23ι 499823 五、發明說明(53) I上設置晶片電容器220之凹部334,而收容晶片電容•器 § 220。實施例2之第1改變例是經由接著用樹脂層(接著板 )238a、23 8b而貼合設置通孔230A之第1樹脂基板230a以 及未設置通孔之第2、第3樹脂基板230b、230c,而形成具 備收容晶片電容器220之凹部335的核心基板230,而在凹' 部3 3 5内收容複數個晶片電容器2 2 〇。 繼續參照第21及22圖說明本發明之實施例2之第1改變 例之印刷電路板的製造方法。 人 (1) 將厚度〇· 3 mm之玻璃布等的心材含浸於βτ樹脂而 硬化之樹脂基板2 31 a的兩面層壓銅箔2 3 2之銅張積層板 23 1 Μ做為出發材料(參照第丨7 ( a )圖)。將該銅貼積層 板231M的銅羯232,藉由以圖案狀蝕刻,在兩面上形成具 |備導體電路2 35的第2、第3樹脂基板2 3 0b、230c (第17 (B ;/圖)。此外5以圖案狀蝕刻同時,以形成通孔230A而形 成具備導體電路235之第1樹脂基板23〇a (第21圖(B ) )°於是’將第3樹脂基板230c與第2樹脂基板23Ob經由破 璃布等之心材含浸於環氧樹脂之接著用樹脂層238b而積 ^。,樣地,將第2樹脂基板230b與形成通孔230A之第1樹 月曰基板230a經由接著用樹脂層238a而積層。(第21 (C ) 丨圖)。 - (2) 於是’使用熱擠壓而加壓擠壓重疊合之基板,而 將第1、第2、第3樹脂基板2 3〇a、230b、230c多層狀一體 化形成具備收容晶片電容器2 2 0之凹部3 3 5之核心基板 j 230 (參照第21 (D)圖)。在此,首先以加壓而在周圍壓 499823 五、發明說明(54) --- 出接著用樹脂層238a、238b之環氧樹脂(絕緣性樹脂), |而使=1、第2、第3樹脂基板230a、230b、230c密著。此 i外,藉由與加壓同時以加熱硬化環氧樹脂,以接著用樹脂 I層2383、2381)為接著板而介於其間,而強固地接著第2樹 月曰基板230a與第2樹脂基板23Ob與第3樹脂基板230c。 Ο)之後,在凹部334的底面,使用印刷機而塗佈熱 硬化系或UV硬化系的接著材料236 (第以(E )圖)。此 I時,除了塗佈以外,亦可灌注等。 | 接著,在接著材料236上載置晶片電容器220 (參 j苐22圖)。藉由在核心基板收容複數個晶片電容器 220 ’可達到電容器的高集積化。 (5\之後,在凹部334内的晶片電容器220間,填充熱 j硬化性档2脂,加熱硬化而形成樹脂層233 (第22 ( B )圖 |啡。,時,熱硬化性樹脂較佳為環氧、酚、聚咪唑、三 I ,二藉此,固定在凹部335内的晶片電容器22〇,而填充晶 s二|益2 2 0與凹部3 3 5的壁面間的空隙。 。(:並(6\經過上述步驟之基板230 ’以一邊昇溫至50〜150 杰之=壓力5kg/Cm2真空壓著層壓’而設置環氧系樹脂組 曰間樹脂絕緣層240 (參照第22 (C )圖)。 /)接著’在樹脂基板2 3 〇 a側之層間樹脂絕緣曾2 4 0 I w射形成至晶片電容器220之第1端子2 21、第2端子 一 1介層窗口用開口42 (第22 (D )圖)。 * μ以後之步驟’與上述實施例1的(8)〜(21)相同,因此 名略說明。2160-3403-Fi.ptd Page 55 499823 5. The chip capacitor 220 in (52) 334 of the invention description, and the gap between the chip capacitor 220 and the wall surface of the recess 334 is filled. (6) The substrates 2 to 30 after the above steps are heated to 50 to 150 I ° C while being laminated by vacuum pressing at a pressure of 5 kg / cm2, and an interlayer resin insulation I layer 240 is provided (see FIG. 18 (D)). . The steps after the vacuum pressing are 110 mmHg ° and subsequent steps are the same as the steps (7) to (9) of the first embodiment, so the description is omitted. Next, referring to Fig. 20, the description will be made as to placing the IC chip 290 on the printed circuit board 21 which has completed the above-mentioned steps, and mounting the IC chip 290 on the daughter board 295. The solder bump 276U of the completed j printed circuit board 210 corresponds to the solder lining of the 1C chip 290 | 搴 i pad 29 2E '29 2P, 29 2S, and the IC chip 290 is placed to perform ic with soft solution, and the chip 2 9 0 installation. Similarly, the solder bump 276D of the printed circuit board 21 0 is mounted on the daughter board 2 95 by soldering in accordance with the solder pads 294E, 294P, and 294S of the daughter board 295. The thermosetting epoxy j resin sheet forming the interlayer resin insulating layers 240 and 340 described above contains a poorly soluble resin, soluble particles, a hardener, and other components. Individually, it is the same as the first embodiment described above, and therefore description thereof is omitted. (First Modified Example of Embodiment 2) Next, a printed circuit board 212 according to an i-th modified example of the second embodiment of the present invention will be described with reference to Fig. 23. The above-mentioned embodiment 2 is explained by the person who sets up the BGA. The structure of the first modified example of the second embodiment is a structure in which the PGA method is connected via the conductivity " 296. In addition, the above-mentioned second embodiment. The recessed portion 334 of the chip capacitor 220 is provided on the core substrate 23ι 499823 by countersinking. 5. Description of the invention (53) I, and the chip capacitor is accommodated § 220. The first modified example of the second embodiment is that the first resin substrate 230a provided with through holes 230A and the second and third resin substrates 230b provided with no through holes are bonded together by using resin layers (adhesive plates) 238a and 23 8b. 230c to form a core substrate 230 having a recessed portion 335 for accommodating the chip capacitor 220, and a plurality of chip capacitors 2 2 0 are accommodated in the recessed portion 3 3 5. With reference to Figs. 21 and 22, a method for manufacturing a printed circuit board according to a first modification of the second embodiment of the present invention will be described. A person (1) made a core material such as glass cloth with a thickness of 0.3 mm impregnated with βτ resin and hardened a resin substrate 2 31 a on both sides of which a copper foil 2 3 2 was laminated with a copper laminate layer 23 1 Μ as a starting material ( Refer to Figure 丨 7 (a)). The copper 羯 232 of the copper-clad laminated board 231M was pattern-etched to form second and third resin substrates 2 3 0b and 230c with conductor circuits 2 35 (the 17th (B; / Figure 5) In addition, the first resin substrate 23oa (FIG. 21 (B)) including the conductor circuit 235 is formed to form a through hole 230A at the same time as pattern etching. Then, the third resin substrate 230c and the second resin substrate 230c are formed. Resin substrate 23Ob is impregnated with a core material such as glass-breaking cloth by impregnating the epoxy resin with a resin layer 238b. Similarly, the second resin substrate 230b and the first tree-shaped substrate 230a forming the through hole 230A are bonded to Laminate with the resin layer 238a. (Figure 21 (C) 丨).-(2) Then 'press the laminated substrates using hot extrusion and pressure, and place the first, second, and third resin substrates 2 30a, 230b, and 230c are multilayered and integrated to form a core substrate j 230 having a recessed portion 3 3 5 for accommodating chip capacitors 220 (refer to FIG. 21 (D)). Here, first, the surroundings are pressurized. Pressure 499823 V. Description of the invention (54) --- Use the epoxy resin (insulating resin) of the resin layers 238a and 238b to make = 1, 2nd, 2nd 3 The resin substrates 230a, 230b, and 230c are in close contact. In addition, the epoxy resin is hardened by heating at the same time as the pressure, and then the resin I layers 2383, 2381) are interposed therebetween, and they are firmly bonded. The second tree month is a substrate 230a, a second resin substrate 23Ob, and a third resin substrate 230c. 0) Then, a thermally curing or UV curing adhesive 236 is applied to the bottom surface of the recessed portion 334 using a printer (see (E)). In this case, in addition to coating, pouring may be performed. Next, a chip capacitor 220 is placed on the bonding material 236 (see figure j 苐 22). By accommodating a plurality of chip capacitors 220 'in the core substrate, it is possible to achieve a high accumulation of capacitors. (After 5 \, between the chip capacitors 220 in the recessed portion 334, a thermosetting resin 2 is filled and heated to harden to form a resin layer 233 (Fig. 22 (B) | Brown.), When the thermosetting resin is preferred It is epoxy, phenol, polyimidazole, and triple I. By this, the chip capacitor 22o fixed in the concave portion 335 is filled, and the gap between the crystal s 2 | yi 2 2 0 and the wall surface of the concave portion 3 35 is filled. : And (6 \ The substrate 230 after the above steps is heated to 50 ~ 150 Jiezhi = pressure 5kg / Cm2 vacuum pressure lamination, and an epoxy resin group insulating resin 240 is provided (refer to Section 22 ( C) Figure). /) Next, the interlayer resin insulation on the resin substrate 2 3 〇a side was formed by 2 4 0 I w to the first terminal 2 21 and the second terminal 1 1 of the chip capacitor 220. 42 (Fig. 22 (D)). * The steps after μ 'are the same as (8) to (21) of the first embodiment, and therefore the description is omitted.

第58頁 499823 五、發明說明(55) ’一""" (實施例2之第1改變例的第1別例) · 繼續,參照第24圖說明本發明之實施例2的第!改變例 之第1別例的印刷電路板。上述之實施例2之第1改變例是 僅具備收容在核心基板2 3 0的晶片電容器2 2 0,但是第j ^ 例是在表面及裏面安裝大容量的晶片電容器286。 - I C晶片是瞬間消耗大電力而進行複雜的演算處理。在 此’為了供給至IC晶片大電力,本實施例是在印刷電路板 具備電源用的晶片電容器220以及晶片電容器286。參照第 1 2圖說明該晶片電容器之效果。 | 第1 2圖,縱軸是供給至I C晶片的電壓,橫軸為時間。 在此’二點鏈狀線c係顯示不具備電源用電容器之印刷雷 路板的電壓變動。未備有電源用電容器的場合,大電壓5咸 弱。虛線A係顯示在表面安裝晶片電容器之印刷電路板的 電f變動。與上述二點鏈狀線比較,電壓沒有大幅降低, 但是由於迴路(1οορ)長度增加,快速的電源供給無法充分 進行。也就是,電力的供給開始時,電壓下降。此外,參 照第23圖,二點鏈狀線B係顯示内藏上述之晶片電容哭的/ 印刷電路板的電壓下降。迴路長度縮短,但是因 核:心5板230收容容量大的晶片電容器,電壓變動;在 此’貫線E係顯示參照第24圖之上诚她、、1 ^ 容器220,還右為亡述核心基板内的晶片電 k有在表面女裝大各量的曰^ 的印刷電路板的電壓變動MC晶片的:片:?之改變例 22。,還有具備大容量(即相V曰大片近晶片電容器 286,而將電壓變動壓至最小。怎蚍)之晶片電容器Page 58 499823 V. Description of the invention (55) '一 " " " (First alternative of the first modification of the second embodiment) · Continue, referring to FIG. 24 to explain the second embodiment of the second embodiment of the present invention. !! Modified Example The printed circuit board of the first alternative. The first modified example of the second embodiment described above includes only the chip capacitor 2 2 0 housed in the core substrate 230, but the j ^ 1 example is a chip capacitor 286 having a large capacity mounted on the surface and the inside. -IC chip is used for complex calculation processing which consumes large power instantly. Here, in order to supply a large amount of power to the IC chip, in this embodiment, a chip capacitor 220 and a chip capacitor 286 for power are provided on a printed circuit board. The effect of the chip capacitor will be described with reference to FIG. 12. Fig. 12 shows the voltage supplied to the IC chip on the vertical axis and time on the horizontal axis. Here, the 'two-point chain line c' shows the voltage variation of the printed circuit board without the power supply capacitor. When no power supply capacitor is provided, the high voltage 5 is weak. A dotted line A indicates a change in electric f of the printed circuit board of the surface mount chip capacitor. Compared with the two-point chain line described above, the voltage does not decrease significantly, but because the length of the loop (1οορ) increases, rapid power supply cannot be performed sufficiently. That is, when the supply of electric power is started, the voltage drops. In addition, referring to FIG. 23, the two-dot chain line B indicates that the voltage of the printed circuit board having the above-mentioned chip capacitor / voltage drop is displayed. The loop length is shortened, but due to the core: the core 5 plate 230 contains a large-capacity chip capacitor, and the voltage varies; here, the line E is shown with reference to Figure 24, since she, 1 ^ container 220, but also the right description The chip voltage in the core substrate has a large amount of change in the voltage of the printed circuit board on the surface of the MC wafer. Of change example 22. There are also chip capacitors with large capacity (ie phase V, large chip near-chip capacitor 286, which minimizes voltage fluctuations. Why?)

499823 I五、發明說明(56) 此外’實施例2的第1別例,晶片電容器22〇是將如第 13 (A)圖所示之完全剝離第1電極221及第2電極222之彼 覆層(未圖示)後以銅電鍍膜2 9彼覆。於是,藉由以銅電 鍵而成之介層窗口 260取得電性接續至銅電鍍膜29彼覆之 第1、第2電極221、222。在此,晶片電容器的電極221、 ;222疋在金屬化組成之表面上的凹凸。因此,使用露出金 屬層之狀態,在接續層240上穿設非貫通孔242之步驟,該 IH3凸上有樹脂殘留。此時,會因該殘留樹脂而發生第i、 第2電極221、222與介層窗口 260之接觸不良。相對於此, j改變例是藉由銅電鍍膜29而使第1 '第2電極221、222的表 |面平滑,在披覆於電極上的層間樹脂絕緣曾24〇上穿設非 |貫通孔42時,不會殘留樹脂,可提高與形成介層窗口 26〇 | I時電極221、222的接續信賴性。 並且,形成銅電鍍膜29之電極221、222上,因為以電 魏形^介層窗口 260,提高了電極221、222與介層窗口2f〇 的接續性,即使實施加熱循環試驗,在電極221、222盥介 j層窗口 260之間部會產生斷線。既不會發生偏移,亦不會 j引起電容器的介層窗口之接續部的不良。 | 再者,上述銅電鍍膜29,是在搭載上印刷電路板之階499823 I V. Explanation of the invention (56) In addition, in the first example of the second embodiment, the chip capacitor 22 is formed by completely peeling off the first electrode 221 and the second electrode 222 as shown in FIG. 13 (A). After the layer (not shown) is coated with a copper plating film 29. Then, the first and second electrodes 221, 222 electrically connected to the copper plating film 29 are obtained through the interlayer window 260 formed by the copper electrical key. Here, the electrodes 221, 222 of the chip capacitor are uneven on the surface of the metallized composition. Therefore, in a state where the metal layer is exposed, and the non-through hole 242 is formed in the connection layer 240, resin remains on the IH3 protrusion. At this time, due to the residual resin, poor contact between the i-th, second electrodes 221, 222 and the interlayer window 260 may occur. In contrast, the modified example of j is to smooth the surface of the first and second electrodes 221 and 222 by the copper plating film 29, and to insert non-through holes on the interlayer resin insulation coated on the electrodes. In the case of the hole 42, no resin remains, and the reliability of connection with the electrodes 221 and 222 when forming the interlayer window 260 | I can be improved. In addition, the electrodes 221 and 222 of the copper plating film 29 are formed with the electrical window 260 to improve the continuity between the electrodes 221 and 222 and the interlayer window 2f. Even if a heating cycle test is performed, the electrode 221 There will be a break in the middle of the window 260 on the 222th floor. Neither the offset nor the failure of the connection portion of the interlayer window of the capacitor will be caused. Moreover, the above-mentioned copper plating film 29 is a step for mounting a printed circuit board

段,將晶片電容器的製造階段披覆於金屬層26之表面的鎳 /錫層剝離而設置。取而代之’在晶片電容器22Q的製造階 j段,亦可在金屬層26之上直接披覆銅電鍍膜29。也就是 j說,第1別例,以雷射設置到電極的鋼電鍍膜29之開口 i後,進行去殘渣等處理,而以銅電鍍形成介層窗口。因In the step, the nickel / tin layer coated on the surface of the metal layer 26 in the manufacturing stage of the chip capacitor is peeled and provided. Instead, at the manufacturing stage j of the chip capacitor 22Q, a copper plating film 29 may be directly coated on the metal layer 26. That is to say, j, in the first other example, a laser is provided to the opening i of the steel plating film 29 of the electrode, and then residues are removed to form a via window by copper plating. because

第60頁 499823 j五、發明說明(57) ----j I此,在銅電鍍膜29的表面形成氧化膜,因為以上述•雷射及| |去殘渣處理除去氧化膜,而可得到適當地接觸。 j 並且,亦可在晶片電容器220的陶瓷組成之誘電體23 的,面上設置粗化層23 α。因此,提高陶免組成之晶片電 容器220與樹脂組成之層間樹脂絕緣層24〇的密著性,即使 實施加熱循環試驗也不會發生在界面的層間樹脂絕緣層 j | 240之剝離。該粗化層23 α是在燒成後,藉由研磨晶片電| !谷态220的衣面,或在燒成前,施予粗化處理而形成。再 者,第1別例因為對電容器的表面施予粗化處理,而提高 與樹脂的密著性,但是亦可取而代之在電容器的表面施予Page 60 499823 j V. Description of the invention (57) ---- j I Here, an oxide film is formed on the surface of the copper plating film 29, because the oxide film is removed by the above-mentioned laser and | | Touch properly. j In addition, a roughened layer 23 α may be provided on the surface of the dielectric body 23 of the ceramic composition of the chip capacitor 220. Therefore, the adhesion between the ceramic capacitor 220 having a ceramic composition and the interlayer resin insulating layer 24 made of resin is improved, and even if a heat cycle test is performed, peeling of the interlayer resin insulating layer j | 240 at the interface does not occur. This roughened layer 23 α is formed by polishing the top surface of the wafer 220 after firing, or by roughening before firing. In addition, in the first alternative, the surface of the capacitor is roughened to improve the adhesion with the resin, but it may be applied to the surface of the capacitor instead.

矽烷結合處理。 再者,亦可使用如第13 (Β)圖所示除去電容器220的 苐1電極21、第2電極22的披覆2 8的一部份者。因而使第ι 電極21、第2電極22露出而能提高接續性。 (實施例2之第2改變例) 參照第1 4圖說明本發明之實施例2之第2改變例的印刷 電路板的構成。 該第2改變例的印刷電路板之構成,是大致與實施例1 相同。但是收容至核心基板3 0的晶片電容器2 〇不一樣。第| | 14圖係顯示晶片電容器的平面圖。第14 (A)圖係顯示多 數個取用之裁斷前的晶片電容器,圖中一點鏈狀線係顯示 裁斷線。上述之實施例1之印刷電路板是如第1 4圖(B )之 平面圖所示之狀態而在晶片電容器的側緣配設第1電極2 1 !及第2電極22。第14 (C)圖係顯示第2改變例之多數個取 j ϊ_____—__ 丨 1 1 1 1 I 1 1 1 2160-3403-Pi-Ptd 第61頁 499823 五、發明說明(58) 用的晶片電容器,圖中一點鏈狀線係顯示裁斷線。第2改 |變例的印刷電路板是如第14圖(D)之平面圖所示之狀態 I而在晶片電容器的側緣配設第1電極21及第2電極22。 r, ! 該第2改變例的印刷電路板是使用在外緣之内側形成 電極的晶片電容器20,因此可使用容量大的晶片電容器。 繼續,將參照第1 5圖說明第2改變例之第1別例的印刷 電路板。 第15圖係顯示第1別例之印刷電路板的核心基板上所 | I收容之晶片電容器20的平面圖。上述之實施例1是在核心 | I基板上收容複數個小容量的晶片電容器,但是第1別例是 在核心基板上收容大容量的大型的晶片電容器20。在此,馨 晶片電容器20是由第1電極21與第2電極22,與誘電體23, 接續至第1電極21之第1導電膜24,與接續至第2電極22側 I之第2導電膜25,與沒有接續至第1導電膜24及第2導電膜 I 25的晶片電容器的上下面之接續用之電極27所組成。經由| |該電極2 7而接續ic晶片側與子板。 — 該第1改變例之印刷電路板因為是使用大型的晶片電 容器20 ’可使用容量大的晶片電容器。此外,因為使用大 |型的晶片電容器2 0,即使重複加熱循環,在印刷電路柄亦 不會發生彎曲。 參照第1 6圖而說明第2別例之印刷電路板。第1 6 ( a ) | _ 圖係顯示多數個取用之晶片電容器,圖中一點鏈狀線係顯 不一般的裁斷線,第1 6 (β )圖係顯示晶片電容哭的平、 圖。如第Η U)圖所示,該第2別例是以連結複數個(面圖Silane combined treatment. Furthermore, as shown in FIG. 13 (B), a part of the coating 2 8 of the first electrode 21 and the second electrode 22 of the capacitor 220 may be removed. Therefore, exposing the first electrode 21 and the second electrode 22 can improve the continuity. (Second Modification of Second Embodiment) The structure of a printed circuit board according to a second modification of the second embodiment of the present invention will be described with reference to Figs. The structure of the printed circuit board of the second modification is substantially the same as that of the first embodiment. However, the chip capacitors 20 accommodated in the core substrate 30 are different. Figure | | 14 is a plan view showing a chip capacitor. Figure 14 (A) shows a number of chip capacitors taken before cutting, and a chain line in the figure shows the cutting line. In the printed circuit board of the first embodiment described above, the first electrode 2 1 and the second electrode 22 are arranged on the side edges of the chip capacitor as shown in the plan view of FIG. 14 (B). Figure 14 (C) shows the majority of the second modification. J ϊ _____—__ 丨 1 1 1 1 I 1 1 1 2160-3403-Pi-Ptd Page 61 499823 5. Description of the invention (58) Wafer Capacitor, a chain line in the figure shows the cut line. The second modified example is a printed circuit board in the state I shown in the plan view of FIG. 14 (D), and the first electrode 21 and the second electrode 22 are arranged on the side edges of the chip capacitor. r,! The printed circuit board of the second modification uses a chip capacitor 20 in which electrodes are formed on the inner side of the outer edge. Therefore, a chip capacitor having a large capacity can be used. Continuing, a printed circuit board according to a first modification of the second modification will be described with reference to FIG. 15. Fig. 15 is a plan view showing a chip capacitor 20 accommodated on a core substrate of a printed circuit board of the first alternative. In the first embodiment described above, a plurality of small-capacity chip capacitors are housed on the core substrate, but the first other example is a large-capacity large-scale chip capacitor 20 housed on the core substrate. Here, the Xin-chip capacitor 20 is connected to the first conductive film 24 connected to the first electrode 21 by the first electrode 21 and the second electrode 22 and the electromotive body 23 and to the second conductive layer connected to the second electrode 22 side I The film 25 is composed of an electrode 27 for connection to the upper and lower surfaces of a chip capacitor not connected to the first conductive film 24 and the second conductive film I 25. The IC chip side and the daughter board are connected via the electrode 27. — Since the printed circuit board of this first modification uses a large-sized chip capacitor 20 ', a large-capacity chip capacitor can be used. In addition, because the large chip capacitor 20 is used, even if the heating cycle is repeated, the printed circuit handle does not bend. The printed circuit board of the second alternative example will be described with reference to FIG. 16. The 16th (a) | _ picture shows most of the chip capacitors taken. The one-point chain line in the figure shows an unusual cutting line, and the 16th (β) picture shows the flat picture of the chip capacitor. As shown in Fig. ΗU), the second example is connected by a plurality of

2160-3403-Pf-ptd 第62頁 五、發明說明(59) 用中之範例為3枚)多數個取用之晶片電容器而以大“ 该第2別例’因為县你闲女刑 丨20,即使重複加熱循環,在 J用==電容器 丨 上述之實施例,旦萨”雪*!板亦不會發生彎曲。 &將曰曰月包各器内藏於釦 内,但是亦可使用在陶瓷板設置導膜之拓妝 以取代晶片電容器。 體膜之板狀的電谷器 如以上說明,根據實施例2之 板内收容電容器,曰/拉方法,可在核心基 低印刷電路板的趣舆電容器之距離,而可減 路之樹脂基板而形成二;r,積層複數個形成導體電 配線密度,可減少絡因此可提高核心基板内的 此外,由於;緣:的層數。 使發生起因於電容3^ ^ ”電谷器間填充樹脂,因此即 因此不會影響電容^夕^枚’&可被緩和而不會發生偏移。 溶解等。因此實施^ ^ ^介層f 0的接續部的剝離和 又…鋼‘保持所期望的性能^ 生。 〜包令的〜场合5亦可防止偏移的發 (實施例3 ) 參照第3 0、31圖+、Β + 路板。第30圖係% :兄明有關本發明之實施例3的印刷電 示第30圖所示之印=刷電路板410的剖面,第31圖係顯 在子板495之側的狀熊,路板410上載置IC晶片490 ,而安裝2160-3403-Pf-ptd Page 62 V. Description of the Invention (59) The example in use is 3) Most of the chip capacitors used are large, "The 2nd example" is because the county's idle female sentence 丨 20 Even if the heating cycle is repeated, in the above-mentioned embodiment of J == capacitor, the “Densa” snow *! Board will not bend. & Each of the moon-packs is contained in a buckle, but it is also possible to replace the chip capacitor with a top-coat having a conductive film provided on a ceramic plate. As described above, the plate-shaped electric valley device of the body film is based on the method of accommodating the capacitors in the plate of the second embodiment, which can reduce the distance between the capacitors of the printed circuit board and reduce the resin substrate of the circuit. And forming two; r, a plurality of layers are formed to form a conductor electrical wiring density, which can reduce the network and thus improve the core substrate. In addition, because of: the number of layers of the edge. The reason is that the capacitor is filled with resin between the capacitors. Therefore, the capacitors will not be affected. Therefore, the capacitors can be alleviated without shifting. Dissolution, etc. Therefore, ^ ^ ^ interlayer is implemented. The peeling of the connection part of f 0 and ... the steel 'maintains the desired performance. ~ The order of the order ~ The occasion 5 can also prevent the occurrence of the offset (Example 3) Refer to Figures 30, 31 +, B + Circuit board. Figure 30 is%: Xiongming's printed electrical display of the third embodiment of the present invention. Figure 30 shows the stamp = the cross section of the printed circuit board 410. Figure 31 shows the shape on the side of the daughter board 495. Bear, board 410 mounts IC chip 490 and installs

2160-3433-?:-?:d 第63頁 499823 I五、發明說明(60) | 如第⑽圖所示之印刷電路板410是由收容複數個晶片 電容器420之核心基板430與增疊配線層480A、480B所組 成。增疊配線層480A、48〇β是由層間樹脂絕緣層54〇、541 所組成。在增疊配線層4 8 0 A、4 8 0 Β的層間樹脂絕緣層5 4 0 I上’形成有導體電路558以及介層窗口 560,而層間樹脂絕 |緣層541上形成有導體電路559以及介層窗口 564。層間樹 |脂絕緣層141之上,配設銲錫光阻層470。核心基板4 30 上,配設著與晶片電容器420接續之介層窗口 460以及導體 電路4 58。增疊配線層480A與增疊配線層480B是經由形成 在核心基板430上的貫穿孔456而接續。2160-3433-?:-?: d Page 63 499823 I V. Description of the Invention (60) | The printed circuit board 410 shown in the second figure is composed of a core substrate 430 that houses a plurality of chip capacitors 420 and an overlay wiring Layers 480A, 480B. The stacked wiring layers 480A and 480B are composed of interlayer resin insulating layers 540 and 541. Conductor circuits 558 and interlayer windows 560 are formed on the interlayer resin insulation layers 5 4 0 I of the superimposed wiring layers 4 8 0 A, 4 8 0 B, and conductor circuits 559 are formed on the interlayer resin insulation | edge layer 541 And an interposer window 564. On top of the interlayer tree | grease insulation layer 141, a solder photoresist layer 470 is provided. The core substrate 4 30 is provided with an interlayer window 460 connected to the chip capacitor 420 and a conductor circuit 4 58. The superposed wiring layer 480A and the superposed wiring layer 480B are connected via a through-hole 456 formed in the core substrate 430.

| 晶片電容器420是由第30圖所示之第1電極421與第2電 |極422,與夾住第1、第2電極之誘電體423所組成,在誘電 |體4 23上相對配置複數枚接續於第1電極421側之第1導電膜 I 424,與接續於第2電極422側之第2導電膜425。 如第31圖所示,上側的增疊配線層480A上配設著用以 接續至1C晶片490的襯墊492E、492P、492S的銲錫凸塊 丨476U。另一方面,在下側的增疊配線層480B上則形成用以 接續至子板495的襯墊494E、494P、494S之銲錫凸塊 476D。 ϊThe chip capacitor 420 is composed of the first electrode 421 and the second electric electrode 422 shown in FIG. 30, and the electric induction body 423 sandwiching the first and second electrodes. A plurality of the electric induction body 4 23 are relatively arranged. The first conductive film I 424 connected to the first electrode 421 is connected to the second conductive film 425 connected to the second electrode 422. As shown in FIG. 31, solder bumps 476E of pads 492E, 492P, and 492S that are connected to the 1C chip 490 are arranged on the superposed wiring layer 480A on the upper side. On the other hand, solder bumps 476D for pads 494E, 494P, and 494S to be connected to the daughter board 495 are formed on the stacked wiring layer 480B on the lower side. ϊ

1C晶片490的信號用的襯墊492S是經由凸塊476U-導 體電路5 59 -介層窗口 564-導體電路5 58 -介層窗口 560 -貫穿 孔456 -介層窗口560-導體電路558-介層窗口 564-導體電路 55 9-凸塊476D而接續至子板495的信號用的襯墊494S。 1C晶片490的接地用的襯墊492Ε是經由凸塊476U-介The pad 492S for the signal of the 1C chip 490 is via the bump 476U-conductor circuit 5 59-via window 564-conductor circuit 5 58-via window 560-through hole 456-via window 560-conductor circuit 558-via The layer window 564-conductor circuit 55 9-bump 476D is connected to the signal pad 494S of the daughter board 495. The pad 492E for grounding the 1C chip 490 is via a bump 476U-mediated

216D-3403-FI·ptd 第64頁 499823 五、發明說明(61) ~j I層窗口564-導體電路558 -介層窗口 560-導體電路45δ -介層 I窗口 460而接續至晶片電容器420的第1電極421。另一方 面,子板495的接地周的襯墊494Ε是經由凸塊476D-介層 窗口 564-導體電路5 58 -介層窗口 560 -貫穿孔4 56 -導體電路 458 -介層窗口 460而接續至晶片電容器420的第1電極421。 !又’接地用襯墊494Ε2是經由凸塊4761)-介層窗口564-導 j體電路5 58-介層窗口 560-導體電路4 5 8-介層窗口 460而接 | j續至晶片電容器420的第1電極4 21。 ! 1C晶片490的電源用的襯塾492P是經由凸塊476U-介 層窗口564-導體電路5 58-介層窗口560-導體電路4 58 -介層 窗口 460而接續至晶片電容器420的第2電極422。另一方 面’子板495的電源用的襯墊494P是經由凸塊476D-介層 |窗口564-導體電路5 58 -介層窗口 560 -貫穿孔4 56 -導體電路| | 458 -介層窗口 460而接續至晶片電容器420的第2電極4 22。 | 又5 €源用觀塾494P2是經由凸塊476D-介層窗口 564-導 體電路558 -介層窗口 560-導體電路458 -介層窗口460而接 續至晶片電容器420的第1電極422。該實施例,是經由貫 丨穿孔4 56而從子板4 95側接續至晶片電容器42 0之第1、第2 電極421、422,但亦可省略經由貫穿孔的接續。 I 如第30圖所示,本實施例的核心基板430,是經由接 I著材料而接續晶片電容器420之第1樹脂基板4 30a,與經由 接著用樹脂層(接著板)438a而接續至第1樹脂基板430a 之第2樹脂基板430b,與經由接著用樹脂層(接著板) 4 3 8b而接續至第2樹脂基板43Ob之第3樹脂基板430c所組216D-3403-FI · ptd Page 64 499823 V. Description of the invention (61) ~ j I layer window 564-conductor circuit 558-interlayer window 560-conductor circuit 45δ-interlayer I window 460 and connected to the chip capacitor 420 First electrode 421. On the other hand, the pad 494E of the grounding perimeter of the daughter board 495 is connected via the bump 476D-via window 564-conductor circuit 5 58 -via window 560 -through hole 4 56 -conductor circuit 458 -via window 460 To the first electrode 421 of the chip capacitor 420. ! 'Grounding pad 494E2 is connected via bump 4761)-via window 564-conductor circuit 5 58-via window 560-conductor circuit 4 5 8-via window 460 | continued to chip capacitor The first electrode of 420 is 421. 1C chip 490's lining 492P for power supply is the second one connected to chip capacitor 420 via bump 476U-via window 564-conductor circuit 5 58-via window 560-conductor circuit 4 58-via window 460 Electrode 422. On the other hand, the pad 494P for the power supply of the daughter board 495 is via the bump 476D-via | window 564-conductor circuit 5 58 -via window 560 -through hole 4 56 -conductor circuit | | 458 -via window 460 is connected to the second electrode 4 22 of the chip capacitor 420. Another 5 € source view 494P2 is connected to the first electrode 422 of the chip capacitor 420 via the bump 476D-interlayer window 564-conductor circuit 558-interlayer window 560-conductor circuit 458-interlayer window 460. In this embodiment, the first and second electrodes 421 and 422 are connected from the daughter board 4 95 side to the chip capacitor 420 through the through holes 4 56. However, the connection through the through holes may be omitted. As shown in FIG. 30, the core substrate 430 of the present embodiment is connected to the first resin substrate 4 30a of the chip capacitor 420 via a bonding material, and is connected to the first resin substrate (adhesive plate) 438a via a bonding resin layer The second resin substrate 430b of the first resin substrate 430a and the third resin substrate 430c connected to the second resin substrate 43Ob through the resin layer (adhesive plate) 4 3 8b for bonding

1 1 ί I 1 I 2160-3403-ff-ptd 第65頁 五、發明說明(62) 成。第2樹脂基板43〇b上形成有可收容晶片電容器420之開 〇 430B 〇 藉此’因為可在核心基板4 3 0内收容晶片電容器4 2 0, 而能縮短1C晶片490與晶片電容器42〇的距離,因此可減低 印刷電路板41 0的迴路感抗。此外,由於是由第1樹脂基板 4 3 0a、第2樹脂基板43〇b、第3樹脂基板430c積層而成,因 此可得到充分強度的核心基板43〇。並且,因為在核心基 板430的兩面上配設第丨樹脂基板43〇&、第3樹脂基板43〇c 而平滑構成核心基板430,可在核心基板30之上適當地形 成樹脂層540、541以及導體電路558、559,介層窗口 5 6 0、5 6 4 ’而可減低印刷電路板的不良品發生率。 並且’該實施例是在核心基板43〇的兩面,設置介層 窗口 4 6 0 ’因此可以最短的距離接續j c晶片4 9 0與晶片電容 器420,又,子板4 95與晶片電容器420,因此可從子板瞬 間供給大電力至I C晶片。 此外,本實施例,如第25圖(D )所示,以絕緣性接 著劑4 3 6介於第1樹脂基板4 3 0 a與晶片電容器4 2 0之間。在 此’接者劑4 3 6的熱膨服率比核心基板4 3 0小,也就是設定 在陶瓷組成之電容器420的附近。因此在加熱循環試驗, 在核心基板及接者層436與晶片電容器420之間即使發生熱 i膨脹率造成之内應力,核心基板也難以產生裂痕、剝離 ‘等,而能達成高信賴性。亦可防止偏移的發生。 繼續,參照第2 5〜3 0圖而說明有關參照第3 〇圖而上述 之印刷電路板的製造方法。1 1 ί I 1 I 2160-3403-ff-ptd page 65 5. Description of the invention (62). The second resin substrate 43ob is formed with an opening 430B capable of accommodating a chip capacitor 420. As a result, the chip capacitor 420 and the chip capacitor 42 can be shortened because the chip capacitor 420 can be accommodated in the core substrate 430. Therefore, the loop inductance of the printed circuit board 410 can be reduced. In addition, since the first resin substrate 430a, the second resin substrate 430b, and the third resin substrate 430c are laminated, a core substrate 43 with sufficient strength can be obtained. In addition, since the first resin substrate 43 ° and the third resin substrate 43 ° c are disposed on both surfaces of the core substrate 430 to smoothly constitute the core substrate 430, the resin layers 540 and 541 can be appropriately formed on the core substrate 30. And the conductor circuits 558 and 559 and the interlayer windows 5 60 and 5 6 4 ′ can reduce the incidence of defective products on the printed circuit board. And 'this embodiment is provided with an interlayer window 4 6 0 on both sides of the core substrate 43 ’, so that the jc wafer 4 9 0 and the chip capacitor 420 can be connected in the shortest distance, and the daughter board 4 95 and the chip capacitor 420, so It can instantly supply large power from the daughter board to the IC chip. In this embodiment, as shown in FIG. 25 (D), an insulating adhesive 4 3 6 is interposed between the first resin substrate 4 3 0 a and the chip capacitor 4 2 0. Here, the thermal expansion ratio of the connector 4 3 6 is smaller than that of the core substrate 4 3 0, that is, it is set near the capacitor 420 made of ceramic. Therefore, in the heating cycle test, even if internal stress caused by the thermal expansion coefficient occurs between the core substrate and the connector layer 436 and the chip capacitor 420, the core substrate is difficult to generate cracks and peeling, and high reliability can be achieved. It can also prevent the occurrence of offset. The manufacturing method of the printed circuit board described above with reference to FIG. 30 will be described with reference to FIGS. 25 to 30.

2160-3403-FI'Ptd2160-3403-FI'Ptd

499823 五、發明說明(63) — (1) 將厚度〇· lmm之玻璃布等的心材含浸於BT核|脂而 硬化之樹脂基板430a的一面層壓銅箔432之銅張積層板 430M (第1樹脂基板430a與第3樹脂基板430c )做為出發材 |料(參照第25(A)圖)。 · i j 接著’藉由圖案狀蝕刻該銅貼積層板430M的銅箔 43 2,而在銅箱432上形成介層窗口形成用開口 432a (參昭 第 2 5 ( B )圖)。 / ^ (2) 之後,在沒有層壓第1樹脂基板43〇&的銅箔432之 面上,使用印刷機而塗佈熱硬化系或ϋν硬化系的接著材料 4 3 6 (參照第2 5 ( C )圖)。此時,除了塗佈以外,亦可灌 !注。 … 接著’在接著材料4 3 6上載置複數個陶瓷組成之晶片 電容器420,經由接著材料436而接著晶片電容器420於第1 樹脂基板430a上(參照第25 (D )圖)。晶片電容器420可 為一個,亦可為複數個,藉由使用複數個晶片電容器 420,可達電容器的高集積化。 r | (3)接著’準備將玻璃布等的心材含浸於環氧樹脂之 接著用樹脂層(接著用樹脂層)438a、438b以及含浸玻璃 布等之心材於BT樹脂而硬化之第2樹脂基板430b (厚度 〇.4mm )。在接著用樹脂層438a及第2樹脂基板430b上形成 可收容晶片電容器420的通孔36A、430B。首先,在層壓銅 、冶4 3 2之面下的第3樹脂基板4 3 0 c上經由接著用樹脂層4 3 8 b j而載置第2樹脂基板4 3 Ob。接著,在第2樹脂基板43 〇b上經 由接著用樹脂層438a,反轉第1樹脂基板430a而載置。也499823 V. Description of the invention (63) — (1) Impregnated with a BT core | grease and hardened resin substrate 430a, a core sheet of glass cloth with a thickness of 0.1 mm is laminated with a copper foil laminate 430M of copper foil 430M (No. The first resin substrate 430a and the third resin substrate 430c are used as starting materials (see FIG. 25 (A)). · I j Next ', the copper foil 43 2 of the copper-clad laminate 430M is pattern-etched to form an opening 432a for forming an interposer window in the copper box 432 (see FIG. 25 (B)). / ^ (2) After that, on the surface of the copper foil 432 on which the first resin substrate 43 0 & is not laminated, a thermal curing or ϋν curing adhesive 4 4 6 is applied using a printing machine (refer to Section 2). 5 (C) figure). In this case, in addition to coating, injection can also be performed. … Next ', a plurality of ceramic capacitors 420 are placed on the bonding material 4 3 6, and the wafer capacitor 420 is bonded to the first resin substrate 430 a via the bonding material 436 (see FIG. 25 (D)). There may be one or more chip capacitors 420, and by using a plurality of chip capacitors 420, a high accumulation of capacitors can be achieved. r | (3) Next, the second resin substrate hardened with BT resin is prepared by impregnating a core material such as glass cloth with epoxy resin, and then using a resin layer (a subsequent resin layer) 438a, 438b and a core material impregnated with glass cloth or other material to BT resin. 430b (thickness 0.4mm). Through-hole resin layers 438a and second resin substrate 430b are formed with through holes 36A and 430B that can accommodate chip capacitors 420. First, a second resin substrate 4 3 Ob is placed on the third resin substrate 4 3 0 c under the surface of the laminated copper and metallurgy 4 3 2 via a bonding resin layer 4 3 8 b j. Next, the first resin substrate 430a is inverted and placed on the second resin substrate 430a via the resin layer 438a for bonding. and also

2i60-3403~?f-ptd 第67頁 499823 五、發明說明(64) 就是,將接續於第1樹脂基板430a之晶片電容器42〇向著接 著用樹脂層438a側,而以在第2樹脂基板“⑽形成之開口 430Β,容晶片電容器42〇之狀態重疊合(參照第“圖(Α) )。藉此’可提供核心基板430内可收容晶片電容器42〇, 且減低迴路感抗的印刷電路板。 再者,不可使用陶瓷和ΑΙΝ等的基板為核心基板。該 基板外型加工性差,又無法收容電容器,即使以樹脂填充 仍會產生空隙。 ' (4)於是,使用熱擠壓而加壓擠壓重疊合之基板,而 將第1、第2、第3樹脂基板430a、430b、430c多層狀一體2i60-3403 ~? F-ptd P.67 499823 V. Description of the Invention (64) That is, the chip capacitor 42 connected to the first resin substrate 430a is directed toward the bonding resin layer 438a side, and the The state of the opening 430B formed by the chip is superimposed on the state of the chip capacitor 42 (see FIG. (A)). In this way, a printed circuit board capable of accommodating chip capacitors 42 in the core substrate 430 and reducing the inductance of the circuit can be provided. Furthermore, substrates such as ceramics and AIN cannot be used as the core substrate. This substrate has poor formability and cannot accommodate capacitors. Even if it is filled with resin, voids are generated. '(4) Then, the overlapped substrates are pressed by hot pressing, and the first, second, and third resin substrates 430a, 430b, and 430c are multilayered and integrated.

化,形成具有複數個晶片電容器42 0的核心基板430 (參照 第26 (B)圖)。在此,首先以加壓而在周圍壓出接著用 I樹脂層438a、438b組成之環氧樹脂(絕緣性樹脂),而填 充開口 4 3 0 B與晶片電容器4 2 0之間的空隙。並且,與加壓 同時以加熱硬化環氧樹脂,以接著用樹脂層438a、438b為 接著用樹脂而介於其間,而強固地接著第1樹脂基板43〇3 與第2树月曰基板4 3 0 b與弟3樹脂基板4 3 0 c °再者,本實施例 是以從接著用樹脂層溢出之環氧樹脂而填充開口 4 3 〇 B内的 空隙,但是取而代之,亦可在開口 430B内配置填充材。The core substrate 430 includes a plurality of chip capacitors 420 (see FIG. 26 (B)). Here, first, an epoxy resin (insulating resin) composed of I resin layers 438a and 438b is pressed out by pressing, and the gap between the opening 4 3 0 B and the chip capacitor 4 2 0 is filled. In addition, the epoxy resin is hardened by heating at the same time as the pressure, and the resin layers 438a and 438b are used as the resin to be interposed therebetween, and the first resin substrate 4403 and the second tree substrate 4 3 are firmly bonded. 0 b and 3 resin substrate 4 3 0 c ° Furthermore, in this embodiment, the gap in the opening 4 3 〇B is filled with epoxy resin that overflows from the resin layer, but instead, it can be in the opening 430B. Configure the filler.

在此,由於核心基板430的兩面是配置平滑的第i樹脂 基板4 30a、第3樹脂基板430c,無損於核心基板430的平滑 性’在後述之步驟,可適當地在核心基板4 3 0上形成層間 I樹脂絕緣曾540、541以及導體電路558、559、介層窗口 | 560、564,可減低印刷電路板之不良品發生率。此外,可Here, because both sides of the core substrate 430 are smoothly arranged with the i-th resin substrate 4 30a and the third resin substrate 430c, the smoothness of the core substrate 430 is not impaired. Forming interlayer I resin insulation 540, 541, conductor circuits 558, 559, interlayer windows | 560, 564 can reduce the incidence of defective products on printed circuit boards. In addition,

2160-3403-?!-ptd 第68頁 499823 !五、發明說明(65) |得到充分強度的核心基板430。 · | (5)接著,以雷射而除去從鋼箔432之介層窗口形成 j用開口432露出之部分,而形成到晶片電容器420之第1電 極4 21及第2電極4 22之介層窗口用開口442。也就是使用均 覆幕罩(conformal mask),以雷射在核心基板430上形成 介層窗口用開口 44 2。之後亦可以同樣步驟在基板的其他 I面進行(參照第26 (C )圖)。 §2160-3403-?!-Ptd page 68 499823! 5. Description of the invention (65) | A core substrate 430 with sufficient strength is obtained. (5) Next, the part exposed from the opening 432 of the interlayer window formation 432 of the steel foil 432 is removed by laser, and the interlayers of the first electrode 4 21 and the second electrode 4 22 of the chip capacitor 420 are formed. Window opening 442. That is, a conformal mask is used to form an opening 44 2 for an interposer window on the core substrate 430 by laser. After that, the same procedure can be performed on the other I side of the substrate (see FIG. 26 (C)). §

j (6)接著,以鑽孔或雷射在核心基板30上,形成貫穿I 孔兩貫通孔44 (參照第26 (D )圖)。之後使用氧電漿進 行去殘渣處理。或者以過錳酸等的藥液進行去殘渣處理。 (Ό接著,使用日本真空技術公司製造的sv — 454〇進 行去殘 >查處理5在核心基板4 3 G的全部表面形成粗化面。 此時’使用氬氣體為惰性氣體而以電力2〇〇w、氣體壓力〇. 6Pa、溫度7 0。(:的條件,實施2分鐘電漿處理。之後,以Ni 及Cu為靶材進行濺鍍,而在核心基板43() 金屬層448 (參昭第27 ίΑ ) 。+ π# / 0 …、弗圖)。在此,可使用濺鍍,但 疋藉由=可藉由無電解電鍍形成銅、鎳等的金屬層。此 夕卜’視場合在形成濺鍍後,亦可形成無電解電鍍膜。 或氧化劑施予粗化處理。且,粗化層較佳為〇·卜5 # m (8)接著,在Ni—Cll金屬膜448的表面,貼上 光性乾膜,並載^ ^ . 0 A ^ 市口的感 既定圖査μ 先罩溥曝先•顯像處理,而形成j (6) Next, two through holes 44 penetrating the I-hole are formed on the core substrate 30 by drilling or laser (see FIG. 26 (D)). The residue is then treated with an oxygen plasma. Or use a chemical solution such as permanganic acid for residue removal treatment. (Then, sv-454, manufactured by Japan Vacuum Technology Co., Ltd. was used to remove the residue.) The inspection process 5 forms a roughened surface on the entire surface of the core substrate 4 3 G. At this time, 'the argon gas is used as the inert gas and the electric power 2 is used. 〇〇w, gas pressure 0.6 Pa, temperature 70. (: conditions, plasma treatment was performed for 2 minutes. After that, Ni and Cu were used as targets, and the core substrate 43 () metal layer 448 ( See Zhao No. 27 ίΑ). + Π # / 0…, Futu). Here, sputtering can be used, but the metal layer of copper, nickel, etc. can be formed by electroless plating. Optionally, an electroless plated film may be formed after sputtering is formed. Or an oxidizing agent may be subjected to a roughening treatment. Further, the roughened layer is preferably 0 · b 5 # m (8) Next, a Ni—Cll metal film 448 is formed. The surface is covered with a light dry film and loaded with ^ ^. 0 A ^ The feeling of the city mouth is set to check μ firstly, then exposure and first development processing

2160-3403-Pf.ptd 雜、r ^案光阻45〇。於是,將核心基板430浸潰於電解雷 、又沒,經由1^—Cu金屬層448流通電流,以下列條件在_ 五'發明說明(66) 阻450非形成部施予電解電鍍 第27 (B )圖)。 [電解電鑛水溶液1 硫酸 硫酸銅 添加劑(r卜宁 为” 5 > f HL ) [電解電鍍條件] 電流密度 ; 時間 溫度 形成電解電鍍膜452 (參照 2.24mo 1 / 1 0.26 mo 1 / 1 夕夕七八 > 公司製造的2160-3403-Pf.ptd Miscellaneous, r ^ case photoresist 45. Then, the core substrate 430 was immersed in the electrolytic lightning, and no current was passed through the 1 ^ -Cu metal layer 448. The following conditions were applied to the electroplating of the non-forming portion of the resistance 450 in the following conditions: B) Figure). [Electrolytic solution of electrolytic ore 1 copper sulfate sulphate additive (r   5 > f HL) [Electrolytic plating conditions] Current density; time and temperature to form electrolytic plating film 452 (refer to 2.24mo 1/1 0.26 mo 1/1 evening Xiqiba > made by the company

19.5 mol/1 1 A/dm2 1 2 0分鐘 22 ± 2 〇C (9)以5%Na〇H剝離除去光阻4 50後,以硝酸以及硫酸 與過氧化氫的混合液蝕刻該電阻450下的Ni-Cu層448而溶 解除去,形成銅箔432及Ni-Cu層448與電解銅電鍍膜452所 組成之導體電路458 (包含介層窗口 460 )。於是水洗基 板、乾fe後,在基板的兩面吹附上餘刻液,藉由餘刻貫穿 孔4 56的表面與導體電路458 (包含介層窗口 46〇),而在 貝穿孔45 6的全部表面以及導體電路458 (包含介層窗口 4 6 G )的全部表面形成粗化面4 6 2 (參照第2 7 ( C )圖)。 餘刻液是使用咪唑銅(Π )複合體丨〇重量部、乙二醇酸7 重:E部、氣化鈉5重量部以及離子交換水7 8重量部所組成 之蝕刻液。 (1 0 )使用印刷機在基板4 3 0的兩面塗佈以環氧系樹脂 為主成份之樹脂填充劑464,而填充導體電路458或貫穿孔19.5 mol / 1 1 A / dm2 1 2 0 minutes 22 ± 2 0C (9) Peel off the photoresist with 50% NaOH to remove 50% of the photoresist, and then etch the resistance 450 times with a mixed solution of nitric acid, sulfuric acid and hydrogen peroxide. The Ni-Cu layer 448 is dissolved and removed to form a conductor circuit 458 (including a via window 460) composed of the copper foil 432, the Ni-Cu layer 448, and the electrolytic copper plating film 452. Therefore, after washing the substrate and drying the substrate, the remaining liquid is blown on both sides of the substrate, and the surface of the through-hole 4 56 and the conductor circuit 458 (including the interlayer window 460) are blown, and the entire surface of the through hole 45 6 The surface and the entire surface of the conductor circuit 458 (including the interlayer window 4 6 G) form a roughened surface 4 6 2 (see FIG. 27 (C)). The remaining solution is an etching solution composed of an imidazole copper (Π) complex, a weight portion of 7 g of glycolic acid, a portion E, a weight portion of sodium gasification, and a weight portion of 78 weight portions of ion-exchanged water. (1) Use a printing machine to apply a resin filler 464 containing epoxy-based resin as the main component to both sides of the substrate 430, and fill the conductor circuit 458 or the through hole

2160-3403-Pi-ptd 第70頁 499823 五、發明說明(67) 456内,進行加熱乾燥。也就是說,藉由該步驟,在導體 電路458之間、介層窗口 460、貫穿孔456内填充樹脂填充 劑464 (參照第27 (D )圖)。 ! (11)將完成上述(10)之處理的基板4 30之一面,藉由 |使用帶狀研磨紙(三共理化學公司製造)之帶狀研磨機 (belt sander)研磨,在導體電路458的表面和貫穿孔456 的槽脊表面456a已沒有樹脂填充劑殘留之狀態研磨,接 著’進行以上述帶狀研磨機研磨而去除損傷(damage)之樾 I光研磨。在基板430的其他面同樣地進行該等一連串的研 |磨。於是,使填充之樹脂填充劑464加熱硬化。這樣的狀 I態’除去填充於貫穿孔456等之樹脂填充劑464的表層部以 及導體電路458上面的粗化面462,而平滑基板430的兩 面’經由粗化面462而強固地密著樹脂填充劑464與導體電 路458,又經由粗化面462而強固地密著貫穿孔456的内壁 面與樹脂填充劑4 6 4。 接著,以喷霧器將使用上述(9 )之蝕刻液相同之蝕刻 !狄吹附在基板4 3 0的兩面,藉由餘刻一旦平坦化之導體電 路458的表面與貫穿孔456的槽脊表面456a,而在導體電路 458的全部表面形成粗化面458α (參照第28 (A)圖)。 (12)經過上述步驟之基板430上,將熱硬化型環氧系 樹脂薄板以一邊昇溫至50〜150 °C並以壓力5kg/cm2真空壓 :著層壓,而設置層間樹脂絕緣層540 (參照第28 (B)圖 I )。真空壓著時的真空度為lOmmHg。 (1 3 )接著,在層間樹脂絕緣層5 4 0上以雷射形成介層2160-3403-Pi-ptd Page 70 499823 V. Description of the invention (67) 456, heat and dry. That is, by this step, the resin filler 464 is filled between the conductor circuits 458, the via window 460, and the through-hole 456 (see FIG. 27 (D)). (11) Polish one surface of the substrate 4 30 completed in (10) above with a belt sander using a belt-shaped abrasive paper (manufactured by Sankyo Rika Co., Ltd.), The surface and the ridge surface 456a of the through-hole 456 are polished in a state where no resin filler remains, and then the light polishing using the above-mentioned belt grinder to remove damage is performed. The series of grinding processes are similarly performed on the other surface of the substrate 430. Then, the filled resin filler 464 is heat-hardened. This state “removes the surface layer portion of the resin filler 464 filled in the through-hole 456 and the like and the roughened surface 462 on the conductor circuit 458, and both sides of the smooth substrate 430 are firmly adhered to the resin through the roughened surface 462 The filler 464 and the conductor circuit 458 are in close contact with the inner wall surface of the through-hole 456 and the resin filler 4 6 4 through the roughened surface 462. Next, the same etching solution using the above (9) etching solution is sprayed with a sprayer! Di Blow is attached to both sides of the substrate 430, and the surface of the conductor circuit 458 and the ridges of the through holes 456 once planarized at a later time. The surface 456a forms a roughened surface 458α on the entire surface of the conductor circuit 458 (see FIG. 28 (A)). (12) On the substrate 430 that has undergone the above steps, the thermosetting epoxy resin sheet is heated to 50 to 150 ° C on one side and vacuum-pressed at a pressure of 5 kg / cm2: laminating, and an interlayer resin insulating layer 540 ( Refer to Figure 28 (B) Figure I). The degree of vacuum during vacuum pressing was 10 mmHg. (1 3) Next, an interlayer is formed on the interlayer resin insulating layer 5 4 0 by laser.

2160~3403-Ρί·p td 第71頁 4998232160 ~ 3403-Ρί · p td Page 71 499823

[^、發明說明(68) I I窗口固開口 542 (參照第28(C)圖)。 丨 (1 4 ) 接著,使用(7 )之步驟,使用日本真空技術公司 製造的SV-4540進行去殘渣處理,在層間樹脂絕緣層540的 表面形成粗化面540 α (參照第28 (D )圖)。在此,亦可 以酸或氧化劑施予粗化處理。此外,粗化層較佳為〇 · 1〜5 ! i // m。 j \ \ (1 5) 之後,與步驟(7)同樣地,以Ni及Cu為靶材進行 濺鍍,而在層間樹脂絕緣層540的表面形成iNi_Cu金屬層 548 (參照第29 ( A )圖)。在此,可使用濺鍍,但是藉由 亦可藉由無電解電鍍形成銅、鎳等的金屬層。此外,視場 合在形成濺鍍後,亦可形成無電解電鍍膜。 | I (16)接著,與步驟(8)同樣地,在Ni-Cu金屬膜548的 | |表面,貼上市售的感光性乾膜,並載置光罩薄膜,而曝 光*顯像處理,而形成既定圖案的光阻544。於是,將基 板浸潰於電解電鍍液中,經由N i - C u金屬層5 4 8流通電流, 在光阻544非形成部施予電解電鍍,形成電解電鍍膜552 (參照第29 (B )圖)。 I (17)之後以步驟(9)同樣的處理5形成Ni-Cu金屬層 i 548與電解電鍍膜552組成之導體電路558 (包含介層窗口 560)。於是,水洗基板,乾燥之後,在基板的兩面以喷 霧器吹附上餘刻液而蚀刻,而在導體電路558 (包含介層 窗口 5 6 0 )的全部表面上形成粗化面1 5 4 (參照第2 9 ( C ) 圖)。 ί (1 8 )再以重複(1 2)〜(1 7 )步驟,在上層形成層間樹脂| f \[^, Description of the invention (68) II window fixed opening 542 (refer to FIG. 28 (C)).丨 (1 4) Next, in the step (7), a residue removal treatment is performed using SV-4540 manufactured by Japan Vacuum Technology Co., Ltd. to form a roughened surface 540 α on the surface of the interlayer resin insulating layer 540 (refer to Section 28 (D) Figure). Here, the roughening treatment may be performed with an acid or an oxidizing agent. In addition, the roughened layer is preferably 0. 1 to 5! I // m. After j \ \ (1 5), as in step (7), Ni and Cu are sputtered to form an iNi_Cu metal layer 548 on the surface of the interlayer resin insulating layer 540 (see FIG. 29 (A)). ). Here, sputter plating may be used, but metal layers such as copper and nickel may also be formed by electroless plating. In addition, an electroless plated film can be formed after the field of view is formed by sputtering. I (16) Next, as in step (8), a commercially-available photosensitive dry film is attached to the surface of the Ni-Cu metal film 548, and a photomask film is placed on the surface of the Ni-Cu metal film. A photoresist 544 of a predetermined pattern is formed. Then, the substrate is immersed in an electrolytic plating solution, a current flows through the Ni-Cu metal layer 5 4 8 and electrolytic plating is applied to the non-formed portion of the photoresist 544 to form an electrolytic plating film 552 (see section 29 (B)). Figure). I (17) is followed by the same process 5 as in step (9) to form a Ni-Cu metal layer i 548 and a conductive circuit 558 (including a via window 560) composed of an electrolytic plating film 552. Then, the substrate was washed with water, dried, and the remaining liquid was etched by spraying on both sides of the substrate with a sprayer to etch, and a roughened surface was formed on the entire surface of the conductor circuit 558 (including the interlayer window 5 6 0) 1 5 4 (Refer to Figure 29 (C)). ί (1 8) Repeat steps (1 2) to (1 7) to form an interlayer resin on the upper layer | f \

2160-3403-?:-?td 第72頁 4998232160-3403- ?:-? Td page 72 499823

I絕緣層541及導體電路559 (包含介層窗口5β4 )以,发粗化 I面565 (參照第29 (D )圖)。 以後的步驟’與上述實施例1的(丨6 〜(丨9 )相同,因此 省略說明。 “ 此外,將1C晶片490載置於完成上述之步驟的印刷電 路板,以及安裝至子板是與實施例丨相同,因此省略說 明0 f j (實施例3的第1別例) |The I insulating layer 541 and the conductor circuit 559 (including the interlayer window 5β4) are used to roughen the I surface 565 (see FIG. 29 (D)). The subsequent steps are the same as (6 to (9) in the first embodiment described above, so the description is omitted. "In addition, the 1C chip 490 is placed on the printed circuit board that completes the above steps, and is mounted on the daughter board. The embodiment 丨 is the same, so the description of 0 fj is omitted (the first other example of Embodiment 3) |

| 茶照第32圖說明有關本發明之實施例3的第1別例的印I 刷電路板。第1別例的印刷電路板大致與上述實施例3相 同。但是,該第1別例的印刷電路板,是配設導電性拴 496,經由該導電性拴496而取得與子板的接續之狀態而Tea Photo Fig. 32 illustrates a printed circuit board according to the first alternative example of the third embodiment of the present invention. The printed circuit board of the first other example is substantially the same as the third embodiment. However, the printed circuit board of the first other example is provided with a conductive bolt 496, and a state of connection with the daughter board is obtained through the conductive bolt 496.

II

j 又,上述之實施例3,僅備有收容於核心基板430之晶I 片電容器420,但是第1別例是在表面及裏面安裝大容量的 晶片電容器486。 ^ IC晶片是瞬間消耗大電力而進行複雜的演算處理。在 此’為了供給至1C晶片大電力,第i別例是在印刷電路板 具備電源用的晶片電容器420以及晶片電容器486。參昭第 1 2圖而說明該晶片電容器之效果。 · ^ 第1 2圖,縱軸是供給至I c晶片的電壓,橫軸為時間。 在此,一點鏈狀線C係顯示不具備電源用電容器之印刷電 路板的電壓變動。未備有電源用電容器的場合,大電壓減 弱。虛線A係顯示在表面安裝晶片電容器之印刷電路板的 499823 五、發明說明(70) 電壓變動。與上述二點鏈狀線比較,電壓沒有大幅降低, 但疋由於迴路(1 ο ο P)長度增加,快速的電源供給無法充分 |進行。也就是,電力的供給開始時,電壓下降。此外,二I i點鏈狀線β係顯示參照第31圖而上述之内藏晶片電容器的 印刷電路板的電壓下降。迴路長度縮短,但是因為無法在 核心基板4 3 0收容容量大的晶片電容器,電壓變動。在 此’實線Ε係顯示參照第32圖之上述核心基板内的晶片電 容器420 ’還有在表面安裝大容量的晶片電容器48 6之第i I別例的印刷電路板的電壓變動。1C晶片的附近晶片電容器| | 42 0 ’還有具備大容量(即相對大感抗)之晶片電容器 4 8 6,而將電壓變動壓至最小。 (實施例3的第1改變例) ^ ‘續’參照第3 6圖說明有關本發明之實施例3的第1改j Further, in the above-mentioned Embodiment 3, only the crystal I chip capacitor 420 housed in the core substrate 430 is provided, but the first alternative is to mount a large-capacity chip capacitor 486 on the surface and inside. ^ IC chips are complex calculations that consume large amounts of power instantly. Here, in order to supply a large amount of power to the 1C chip, the i-th alternative is that a chip capacitor 420 and a chip capacitor 486 for power are provided on a printed circuit board. The effect of the chip capacitor will be described with reference to Fig. 12. · ^ In Fig. 12, the vertical axis is the voltage supplied to the IC chip, and the horizontal axis is time. Here, the one-dot chain line C shows the voltage fluctuation of the printed circuit board without the power supply capacitor. If no power supply capacitor is provided, the large voltage will be reduced. The dotted line A is the 499823 showing the printed circuit board of the chip capacitor on the surface. V. Description of the invention (70) Voltage fluctuation. Compared with the above two-point chain line, the voltage does not decrease significantly, but because the length of the loop (1 ο ο P) increases, fast power supply cannot be performed. That is, when the supply of electric power is started, the voltage drops. In addition, the two I i point chain lines β show that the voltage of the printed circuit board with the chip capacitor built therein described above is referred to FIG. 31. The circuit length is shortened, but because the chip capacitor with a large capacity cannot be accommodated in the core substrate 430, the voltage varies. Here, the 'solid line E' shows the voltage variation of the printed circuit board of the i-th other example of the chip capacitor 420 in the above-mentioned core substrate with reference to FIG. 32 and a surface-mounted large-capacity chip capacitor 48 6. The chip capacitors near the 1C chip | | 42 0 ′ also have chip capacitors 4 8 6 with large capacity (that is, relatively large inductive reactance) to minimize voltage fluctuations. (First Modification of Embodiment 3) ^ "Continued" A first modification of Embodiment 3 of the present invention will be described with reference to FIGS.

變例之印刷電路板414的製造方法。該實施例3之第i改變 !例的印刷電路板是大致與上述之實施例3相同。參照第3〇 I圖而上述之實施例3,是以銅箔432以及Ni-Cu金屬層448、 電解電鍍膜452之3層構成導體電路458。相對於此,實施 例3之第1改變例的印刷電路板412,是以無電解電鍍膜443 與電解電鍍膜4 5 2之2層構成導體電路458。也就是,除去 銅箔432,使厚度變薄,以微細間距形成導體電路458。 此外,貫施例3之第1改變例的印刷電路板41 $,是在 |設置收容晶片電容器420之開口 430B的第2樹脂基板43〇1}的 j兩面,形成導體電路435。該實施例3之第}改變例,是在 第2樹脂基板430b的兩面形成導體電路435。可提高核心基A manufacturing method of the printed circuit board 414 in a modified example. The printed circuit board of the i-th modification of the third embodiment is substantially the same as the third embodiment described above. Referring to FIG. 301, the third embodiment described above is configured with the conductor circuit 458 by three layers of the copper foil 432, the Ni-Cu metal layer 448, and the electrolytic plating film 452. On the other hand, the printed circuit board 412 according to the first modified example of the third embodiment is composed of two layers of an electroless plated film 443 and an electrolytic plated film 4 5 2. That is, the copper foil 432 is removed, the thickness is reduced, and the conductor circuit 458 is formed at a fine pitch. In addition, in the printed circuit board 41 of the first modification of the third embodiment, a conductor circuit 435 is formed on both sides of the second resin substrate 43〇1} of the opening 430B that houses the chip capacitor 420. In the third modification of the third embodiment, conductor circuits 435 are formed on both surfaces of the second resin substrate 430b. Core base

2160-3403-Pi-ptd 第74頁 499823 j五、發明說明(71) 板4 3 0内的配線密度,並可減少增疊之層間樹脂絕緣層的 層數。 此外,實施例3之第1改變例的印刷電路板,晶片電容 j器420是將如第13 ( A )圖所示之完全剝離第1電極421及第 | 2電極422之坡覆層(未圖示)後,以銅電鍵膜29披覆。於 I是5籍由以銅電鍍而成之介層窗口 460取得電性接續至銅 電鍍膜29坡覆之第1、第2電極421、422。在此,晶片電容 器的電極421、422是在金屬化組成之比面上的凹凸。因 此,使用露出金屬層之狀態,在第1樹脂基板430a上穿設 |非貫通孔442之步驟,會在凹凸上殘留樹脂。此時,會發 | j生該樹脂殘留而第1、第2電極421、422與介層窗口 460之 ! 接觸不良。相對於此,實施例3之第1改變例是藉由銅電鑛 膜29而使第1、第2電極421、422的表面平滑,在披覆於電 極上之第1樹脂基板430a穿設開口 442時,不會殘留樹脂, I可提高與形成介層窗口的電極4 21、4 2 2的接續信賴性。 I 並且,因為在形成銅電鍍膜29之電極421、422上以電 I鍍形成介層窗口 460,因此提高了電極421、422與介層窗 口 4 60之接續性’即使實施加熱循環試驗,在電極42;[、 422與介層窗口 460之間也不會發生斷線。既不會發生偏 移,亦不會引起電容器電極的不良。 · 再者’上述銅電鐘膜29 ’是在搭載上印刷電路板之階I, ^段’將晶片電容器的製造階段披覆於金屬層26之表面的鎳丨 /錫層剝離而設置。取而代之,在晶片電容器42〇的製造階2160-3403-Pi-ptd page 74 499823 j V. Description of the invention (71) The wiring density in the board 4 30, and it can reduce the number of layers of the interlayer resin insulation layer. In addition, in the printed circuit board according to the first modified example of Embodiment 3, the chip capacitor 420 is a strip coating (not shown) of the first electrode 421 and the second electrode 422 as shown in FIG. 13 (A). (Illustrated), and then covered with a copper key film 29. I is the first and second electrodes 421 and 422 which are electrically connected to the copper-plated film 29 on the interlayer window 460 made of copper plating. Here, the electrodes 421 and 422 of the chip capacitor have irregularities on the specific surface of the metallized composition. Therefore, in the state where the metal layer is exposed, the step of forming the non-through hole 442 in the first resin substrate 430a causes resin to remain on the unevenness. At this time, it will occur that the resin remains and the first, second electrodes 421, 422, and the interlayer window 460! Poor contact. On the other hand, the first modification of the third embodiment is to smooth the surfaces of the first and second electrodes 421 and 422 by the copper electro-membrane film 29, and to provide openings in the first resin substrate 430a covering the electrodes. At 442, no resin remains, and I can improve the reliability of connection with the electrodes 4 21 and 4 2 2 forming the interlayer window. In addition, since the interlayer window 460 is formed by electroplating the electrodes 421 and 422 on which the copper plating film 29 is formed, the continuity between the electrodes 421 and 422 and the interlayer window 460 is improved. No disconnection will occur between the electrodes 42; [, 422 and the interlayer window 460. Neither the offset nor the defect of the capacitor electrode is caused. · Furthermore, the above-mentioned copper electrical clock film 29 'is provided in a stage I, a stage where a printed circuit board is mounted, and the nickel / tin layer coated on the surface of the metal layer 26 at the stage of manufacturing the chip capacitor is peeled off. Instead, at the manufacturing stage of the chip capacitor 42

499823 五、發明說明(72) 砬,可在金屬層26之上直接披覆銅電鍍膜29。也就是 說,貫施例3之第1改變例,以雷射設置到電極的銅電鍍膜 29之開口後,進行去殘渣等處理,而以銅電鍍形成介層窗 口。因此,在銅電鍍膜29的表面形成氧化膜,因為以上述 雷射及去殘渣處理除去氧化膜,而可得到適當地接觸。 亚且,在晶片電容器42〇的陶瓷組成之誘電體423的表 面上設置粗化層23a。因此,提高陶瓷組成之晶片電容器 4 2 0與樹脂組成之接著層μ 8匕、$ 3 8 b的密著性,即使實施 加熱循環試驗也不會發生在界面的第1樹脂基板43〇&之剝 離5亥粗化層23a是在燒成後,藉由研磨晶片電容器“ο的 表面’或在燒成前,施予粗化處理而形成。再者,實施例 3之第1改變例因為對電容器的表面施予粗化處理,而提高 與樹脂的密著性,但是亦可取而代之在電容器的表面施予 石夕烧結合處理。 ’ 再者,亦可如第13 (B)圖所示之除去電容器420之第 1電極21、第2電極22之披覆28的一部份而使用。因為露出 第1電極21、第2電極22可提高與介層窗口的接續性。 參照第3 3〜3 5圖說明本發明之實施例3之第1改變例的 印刷電路板的製造步驟。 〇 9)準備厚度〇· imffi之玻璃布等的心材含浸於Βτ樹脂 而硬化之樹脂基板430a的一面層壓銅432之銅張積層板 430M (第1樹脂基板430a與第3樹脂基板430c )此外,準備 在厚度0· 4mm之玻璃布等之心材含浸於BT樹脂而硬化之樹 脂基板的兩面層壓銅箔432之兩面銅張積層板430N (參照499823 V. Description of the invention (72) (2) The copper plating film 29 can be directly coated on the metal layer 26. That is, in the first modification of the third embodiment, a laser is provided to the opening of the copper plating film 29 of the electrode, and a residue removal process is performed to form an interlayer window by copper plating. Therefore, an oxide film is formed on the surface of the copper plated film 29, and the oxide film is removed by the above-mentioned laser and residue removal treatment, and appropriate contact can be obtained. In addition, a roughened layer 23a is provided on the surface of the electromotive body 423 of the ceramic composition of the chip capacitor 42. Therefore, the adhesiveness of the chip capacitor 420 of ceramic composition and the adhesion layer μ 8 of resin composition and $ 3 8 b is improved, and the first resin substrate 43 which does not occur at the interface even if a heating cycle test is performed. The peeled-off roughened layer 23a is formed by polishing the surface of the wafer capacitor "ο" after firing, or by applying a roughening treatment before firing. Furthermore, the first modification of Example 3 is because The surface of the capacitor is roughened to improve the adhesiveness with the resin, but instead of applying a combination of stone sintering to the surface of the capacitor, it can also be shown in Figure 13 (B). It is used by removing part of the cover 28 of the first electrode 21 and the second electrode 22 of the capacitor 420. Because the first electrode 21 and the second electrode 22 are exposed, the connection with the interlayer window can be improved. 3 to 5 illustrate the manufacturing steps of the printed circuit board according to the first modification of the third embodiment of the present invention. 〇9) Prepare a core material such as glass cloth with a thickness of 0 · imffi by impregnating a τ resin with a Bτ resin and curing the substrate 430a. Laminated copper 432 copper sheet laminate 430M (first resin substrate 4 30a and the third resin substrate 430c) In addition, a copper substrate of 430N is laminated on both sides of a copper substrate 430N (refer to FIG.

2160>3403-F[-ptd2160 > 3403-F [-ptd

Μ 第76頁 499823 五、發明說明(73) 第33 ( A )圖)。 · I (20) 接著,藉由圖案狀蝕刻該銅貼積層板430M的銅 |箔432,而在銅箔432上形成介層窗口形成用開口 432a。同 樣地,藉由圖案狀蝕刻兩面銅貼積層板430N的銅箔432, 而導體電路435。(參照第33 (B )圖)。實施例3之第1改 變例,因為在第2樹脂基板43Ob的兩面形成導體電路435, 因此可提高核心基板的配線密度,具有可減少增疊之層間 樹脂絕緣層的層數。 j (2!)之後,在沒有層壓第1樹脂基板430a的銅箔432Μ page 76 499823 V. Description of the invention (73) Figure 33 (A)). · I (20) Next, the copper foil 432 of the copper-clad laminate 430M is pattern-etched to form an opening 432a for forming an interlayer window on the copper foil 432. Similarly, the copper foil 432 on both sides of the copper laminated laminate 430N is pattern-etched, and the conductor circuit 435 is formed. (Refer to Figure 33 (B)). In the first modification of the third embodiment, since the conductor circuits 435 are formed on both sides of the second resin substrate 43Ob, the wiring density of the core substrate can be increased, and the number of interlayer resin insulation layers can be reduced. After j (2!), the copper foil 432 of the first resin substrate 430a is not laminated.

之面上’使用印刷機而塗佈熱硬化系或UV硬化系的接著材 料4 3 6 (參照第3 3 ( C )圖)。此時,除了塗佈以外,亦可 灌注。 接著’在接著材料4 36上載置複數個陶瓷組成之晶片 |電容器420,經由接著材料4 36而接著晶片電容器420於第1 i樹脂基板430a上(參照第33 (D )圖)。晶片電容器420可 為一個’亦可為複數個,藉由使用複數個晶片電容器 420,可達電容器的高集積化。 (2 2 )接著,準備將玻璃布等的心材含浸於環氧樹脂 之接著用樹脂層(接著用樹脂層)438a、438b以及第2樹 | 脂基板43 0b。在接著用樹脂層438a及第2樹脂基板430b上 形成可收容晶片電容器42〇的通孔36A、430B。首先,在層 壓鋼馆432之面下的第3樹脂基板4 3〇c上經由接著用樹脂層 43 8b而載置第2樹脂基板43〇b。接著,在第2樹脂基板43〇1) 上經由接著用樹脂層438a,反轉第1樹脂基板4 30 a而載On the surface ', a thermal curing system or a UV curing system adhesive material 4 3 6 is applied using a printer (see FIG. 3 3 (C)). In this case, in addition to coating, pouring may be performed. Next, a plurality of ceramic wafers | capacitors 420 are placed on the bonding material 4 36, and the wafer capacitors 420 are bonded to the first resin substrate 430a via the bonding material 4 36 (see FIG. 33 (D)). The number of chip capacitors 420 may be one or more. By using a plurality of chip capacitors 420, a high accumulation of capacitors can be achieved. (2 2) Next, a core material such as glass cloth is impregnated with epoxy resin, and then a resin layer (a resin layer for bonding) 438a, 438b and a second resin substrate 430b are prepared. Through-hole resin layers 438a and second resin substrate 430b are formed with through holes 36A and 430B that can accommodate chip capacitors 42. First, a second resin substrate 43ob is placed on the third resin substrate 4300c under the surface of the laminated steel hall 432 via the adhesive resin layer 438b. Next, the first resin substrate 4 30 a is reversely loaded on the second resin substrate 403 a) through the bonding resin layer 438 a.

499823 五、發明說明(74) 置。也就是,將在第2樹脂基板430b形成之開口43〇B可收 容晶片電容器420之狀態重疊合(參照第34圖(A ))。藉 此’可在核心基板430内可收容晶片電容器42〇,且減低^ 路感彳/L的印刷電路板。 — 再者,不可使用陶瓷和AI N等的基板為核心基板。該 基板外型加工性差,又無法收容電容器,即使以樹脂填充 仍會產生空隙。 ' (23) 於是,使用熱擠壓而加壓擠壓重疊合之基板, 而將第1、第2、第3樹脂基板430a、430b、43〇c多声狀一 體化,形成具有複數個晶片電容器42〇的核心基" 照第34 (Β )圖)。 (參 再者,本實施例是以從接著用樹脂層擠出之 ==内的空隙’但是取而代之’亦可在開口 = 内配置填充材。 在此,由於核心基板430的兩面是配置平滑的 基板430a、第3樹脂基板430c,無損於核心基板43〇的半: 性,在後述之步驟,可適當地在核心基板43〇上 門月 樹脂絕緣層540、541以及導體電路558、559、介居成層間 5 60、5 64,可減低印刷電路板之不良品發生率。二 得到充分強度的核心基板430。 卜’可 (24) 接著,以雷射而除去從銅箔432之介 用開口 432露出之部分’而形成到晶片電容器42〇 :开雷成 Γ】1 罝及第2:極422 <介層窗口用開口 442。也就是ί用均 覆幕罩’以雷射在核心基板43〇上形成介層窗吏口用句499823 V. Description of Invention (74). That is, the state where the opening 43B capacitor chip capacitor 420 formed in the second resin substrate 430b is superimposed (see FIG. 34 (A)). Thereby, the chip capacitor 42 can be housed in the core substrate 430, and the printed circuit board can be reduced in road inductance / L. — Furthermore, substrates such as ceramics and AI N cannot be used as core substrates. This substrate has poor formability and cannot accommodate capacitors. Even if it is filled with resin, voids are generated. '(23) Then, the overlapped substrates are press-pressed using hot extrusion, and the first, second, and third resin substrates 430a, 430b, and 43c are multi-sound-integrated to form a plurality of wafers. The core of the capacitor 42 is "in accordance with Fig. 34 (B)". (Furthermore, in this embodiment, the filler is extruded from the inner space of the == which is then extruded with a resin layer, but instead, a filling material may be arranged in the opening =. Here, the two sides of the core substrate 430 are arranged smoothly. The substrate 430a and the third resin substrate 430c do not damage the half of the core substrate 43. In the steps to be described later, the resin insulation layers 540 and 541 and the conductor circuits 558 and 559 can be appropriately placed on the core substrate 43. Layers of 5 60, 5 64 can reduce the incidence of defective products on printed circuit boards. Second, a core substrate 430 with sufficient strength is obtained. Bu 'ke (24) Then, the opening 432 from the copper foil 432 is removed by laser. The exposed portion is formed to the chip capacitor 42. The opening is formed by the laser capacitor. The first electrode and the second electrode 422 are < the opening for the interlayer window 442. That is, the uniform cover is used to cover the core substrate 43 with a laser. 〇Intermediate window official sentences are formed

五、發明說明(75) ---- 442。之後亦可以同樣歩 34(C)圖)。藉此,目=基f的其他面進行(蔘照第 之介層窗口形成用開口43;"層窗口的開口徑是依銅箔432 的開口徑形成介層窗口 口;: f,因此可以適當 密度亦視銅箔432之介声窗。" 3囱口的開口位置精 面定,因此即使雷射的層^十口位形開/4仏的開口位置 位置上形成介層窗口。 置“度低,亦可在適當的V. Invention Description (75) ---- 442. The same can be done later (Figure 34 (C)). With this, the other surfaces of the mesh f are carried out. (The opening diameter of the layer window according to the first interlayer window 43 " is based on the opening diameter of the copper foil 432 to form the interlayer window opening; f, so Appropriate density also depends on the dielectric window of copper foil 432. "The opening position of the 3 mound mouth is fixed, so even if the laser layer ^ ten-port-shaped opening / 4 / opening position position, a dielectric window is formed. "The degree is low.

面的除!由::==刻核心基板430的兩 度之導難電路458,可”步称形成薄的厚 串| ί孔或雷射在核心基板430上,形成貫穿孔 + , ^ ……弟d4 (D )圖)。之後使兩氧電漿進行 去蜮湩處理。*或者以過錳酸等的藥液進行去殘渣處理。 (26)接著,使用日本真空技術公司製造的進 行去殘渣處理,在核心基板43〇的全部表面形成粗化面446 (參照第35 (A)圖)。此時,冑用氬氣體為惰性氣體而 以電力200W、氣體壓力〇· 6Pa、溫度7〇它的條件,實施2分 鐘電漿處理。亦可以酸或氧化劑施予粗化處理。且',粗化 層較佳為0.1〜5 /zm。Face apart! From :: == Engraving the two-degree difficult circuit 458 of the core substrate 430, may form a thin thick string in steps | ί or laser on the core substrate 430 to form a through hole +, ^ ...... d4 ( (D) Figure). After that, the oxygen plasma is subjected to decontamination treatment. * Or a residue removal treatment with a chemical solution such as permanganic acid. (26) Next, a residue removal treatment made by Japan Vacuum Technology Co., Ltd. is used. A roughened surface 446 is formed on the entire surface of the core substrate 43 (refer to FIG. 35 (A)). At this time, using argon gas as an inert gas and electric power of 200 W, gas pressure of 0.6 Pa, and temperature of 70, The plasma treatment is performed for 2 minutes. The roughening treatment may also be performed with an acid or an oxidizing agent. Further, the roughening layer is preferably 0.1 to 5 / zm.

(27)接著,將基板430浸潰於以下組成之無電解電銅 電鍍水溶液中,在粗化面446全體形成厚度〇6〜3〇min之無 電解銅電鍍膜443 (參照第35(B)圖)。 [無電解電鍍水溶液](27) Next, the substrate 430 is immersed in an electroless copper electroplating aqueous solution having the following composition, and an electroless copper electroplated film 443 having a thickness of 0 to 30 minutes is formed on the entire roughened surface 446 (refer to Section 35 (B)). Figure). [Aqueous electroless plating solution]

NiS04 〇. 003 mol/lNiS04 〇. 003 mol / l

五、發明說明(76)V. Description of Invention (76)

酒石酸 硫酸鋼 HCHO NaOH 〇.200 mol/1 〇. 0430 mol /1 0.050 mol/1 0.100 mol/1 a a ^ 乂 又 0比咬基(bipyridy 1 ) 40mg/l 水乙歸·乙二醇 ηιη/ι r . ^ 籽 〇· 10g/l 【無龟解電鍍條件】 3bt之液體溫度40分鐘 -从m雖使用無電解電鍍,但亦可以濺鍍形成銅、^ 寺、、’ 9。此外,視場合,亦可在以濺鍍形成後,形读 無電解電鍍獏。 (8)將市面上可得之感光性乾膜貼附於無電解鋼雷 鍍膜4^3上,載置光罩,以1〇〇mJ/cm2曝光,藉以〇•⑽碳酸 鈉水溶液顯像處理,而設置厚度3〇 Am之電鍍光阻45〇 20圖。(B ))。接著,將基板43〇以5〇 〇c的水洗淨而脫脂, 以2 5 C的水水洗後,再以硫酸洗淨,以下列條件施予^ 銅電鍍,形成電解電鍍膜452 (參照第35 (C )圖)^ “解 [電解電鍍水溶液] ° &酉曼 2. 24moI/l 硫酸銅 0. 26 mol/1 方以5 > p HL ) 19.5 mol/1 [電解電鍍條件] 電流密度 1 A/dm2HCHO NaOH tartaric acid sulfate 〇.200 mol / 1 〇. 0430 mol / 1 0.050 mol / 1 0.100 mol / 1 aa ^ bipyridy 1 40mg / l ethyl acetate, ethylene glycol ηιη / ι r. ^ Seed 0 · 10g / l [Conditions of electroless plating] 3BT liquid temperature of 40 minutes-Although electroless plating is used from m, it can also be sputter-plated to form copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, copper, aluminum, or copper. In addition, depending on the situation, electroless plating can also be performed after forming by sputtering. (8) Attach a photosensitive dry film available on the market to the electroless steel lightning coating 4 ^ 3, place a photomask, expose it at 100 mJ / cm2, and develop the solution with sodium carbonate aqueous solution. , And set a plating photoresist 4 020 map with a thickness of 30 Am. (B)). Next, the substrate 43 was washed with water at 500 ° C to be degreased, washed with water at 25 ° C, and then washed with sulfuric acid, and was subjected to copper plating under the following conditions to form an electrolytic plating film 452 (refer to Section No. 35 (C) Figure) ^ "Solution [Electrolytic plating aqueous solution] ° & Baumann 2.24moI / l copper sulfate 0.26 mol / 1 square 5 > p HL) 19.5 mol / 1 [Electrolytic plating conditions] Current Density 1 A / dm2

2160-3403-Pi.Dtd 499823 五、發明說明(77) 時間 6 5分鐘 ·2160-3403-Pi.Dtd 499823 V. Description of the invention (77) Time 6 5 minutes ·

溫度 ^ 2 + 9 °Q & 剝離除去光阻45〇後,以硝酸以及硫酸與過 虱化虱的混合液蝕刻該電阻45〇下的無電解電鍍膜M3而溶 解除去,形成無電解銅電鍍膜443與電解銅電鍍膜4 52所組 成之厚度18μηι的貫穿孔456以及導體電路458 (包含介声 窗口 46G)。實施例3之第!改變例,是如上述預先將鋼^ 432除去,可使導體電路458的厚度變薄,彳以微細間距形 成。冉者’在此,完全地去除銅箔432而剝離,但是亦可 以線蝕刻(line etching)使銅箔432變薄,既可使導體電 路458的厚度變薄,亦可以微細間距形成。 之後的步驟,與上述之實施例3之(丨〇 )〜(丨8)相同,因 此省略說明。 上述之實施例的第1改變例,在核心基板的兩面設置 介層窗口’但是亦可僅在一面上形成介層窗口。此外,雖 使兩均覆幕罩做為核心基板430表面的銅箔432的開口 432a,但亦可不使用核心基板4 3〇的均覆幕罩而以雷射照 射設置到電容器之開口。 (實施例3的第2改變例)Temperature ^ 2 + 9 ° Q & After removing the photoresist 45 °, the electroless plating film M3 at a resistance of 45 ° is etched with a mixed solution of nitric acid and sulfuric acid and lice, and dissolved and removed to form an electroless copper electrode. A through hole 456 with a thickness of 18 μm and a conductive circuit 458 (including a dielectric window 46G) composed of the plating film 443 and the electrolytic copper plating film 452. The third example! In the modified example, the steel 432 is removed in advance as described above, so that the thickness of the conductor circuit 458 can be reduced, and 彳 can be formed at a fine pitch. Here, the copper foil 432 is completely removed and peeled off, but the copper foil 432 may be thinned by line etching, which may reduce the thickness of the conductor circuit 458 or may be formed at a fine pitch. Subsequent steps are the same as (丨 0) to (丨 8) of the third embodiment described above, and therefore descriptions are omitted. In the first modified example of the above embodiment, via windows are provided on both sides of the core substrate, but via windows may be formed on only one side. In addition, although the two uniformly-covered covers are used as the openings 432a of the copper foil 432 on the surface of the core substrate 430, the uniformly-covered covers of the core substrate 430 may be used instead of the uniformly-covered covers to provide openings to the capacitors. (Second Modification of Example 3)

I 繼續’參照第1 4圖說明有關實施例3之第2改變例的印 刷電路板的構成。 ’ 該第2改變例的印刷電路板之構成,是大致與實施例i 相同。但是收容至核心基板30的晶片電容器2〇不一樣。第 1 4圖係顯示晶片電容器的平面圖。第丨4 ( a )圖係顯示多I Continue 'The structure of a printed circuit board according to a second modification of the third embodiment will be described with reference to Figs. The structure of the printed circuit board of this second modification is substantially the same as that of the embodiment i. However, the chip capacitors 20 accommodated in the core substrate 30 are different. Fig. 14 is a plan view showing a chip capacitor. Figure 4 (a) shows more

Hi 2160-3403-?ί 第81頁 499823 五、發明說明(78) ---- 數個取用之裁斷前的晶片電容器,圖中一點鏈狀線係顯示 裁斷線。上述之實施例!之印刷電路板是如第丨4圖(β )之 I平面圖所示之狀態而在晶片電容器的側緣配設第i電極21 j及第2電極22。第14 (C)圖係顯示第2改變例之多數個取| 甩的晶片電容器,圖中一點鏈狀線係顯示裁斷線。第2改 變例的印刷電路板是如第14圖(D)之平面圖所示之狀態 而在晶片電容器的側緣配設第1電極21及第2電極2 2。 I 戎第2改變例的印刷電路板是使用在外緣之内側形成Hi 2160-3403-? Ί Page 81 499823 V. Description of the Invention (78) ---- Several chip capacitors taken before cutting, a chain line in the figure shows the cutting line. The above embodiment! The printed circuit board has an i-th electrode 21 j and a second electrode 22 on the side edges of the chip capacitor as shown in the plan view of I in FIG. 4 (β). Fig. 14 (C) shows a plurality of chip capacitors taken in the second modified example. A chain line in the figure shows a cut line. In the printed circuit board of the second modification, the first electrode 21 and the second electrode 22 are arranged on the side edges of the chip capacitor as shown in the plan view of Fig. 14 (D). I The printed circuit board of the second modified example is formed on the inner side of the outer edge

|電極的晶片電容器20,因此可使用容量大的晶片電容器。I ! 繼續,將參照第15圖說明第2改變例之第1別例的印刷 電路板。 第1 5圖係顯示第1別例之印刷電路板的核心基板上所 收容之晶片電容器20的平面圖。上述之實施例1是在核心 基板上收容複數個小容量的晶片電容器,但是第1別例是 |在核心基板上收容大容量的大型的晶片電容器20。在此, !晶片电容裔20是由第1電極21與第2電極22,與誘電體23, 接續至第1電極21之第1導電膜24,與接續至第2電極22側 之第2導電膜25,與沒有接續至第1導電膜24及第2導電膜 25的晶片電容器的上下面之接續用之電極27所組成。經由 丨該電極27而接續1C晶片側與子板。 ! 該第1改變例之印刷電路板因為是使用大型的晶片電 I容1§20’可使用容量大的晶片電容器。此外,因為使用大 |型的晶片電容器20,即使重複加熱循環,在印刷電路板亦 不會發生彎曲。| The chip capacitor 20 of the electrode, so a chip capacitor having a large capacity can be used. I! Continuing, the printed circuit board of the first modification of the second modification will be described with reference to FIG. Fig. 15 is a plan view showing a chip capacitor 20 housed on a core substrate of a printed circuit board of the first alternative. In the first embodiment described above, a plurality of small-capacity chip capacitors are housed on a core substrate, but the first other example is a large-capacity large-scale chip capacitor 20 housed on a core substrate. Here, the chip capacitor 20 is composed of a first electrode 21 and a second electrode 22, and an electric inducer 23, a first conductive film 24 connected to the first electrode 21, and a second conductive layer connected to the second electrode 22 side. The film 25 is composed of an electrode 27 for connection to the upper and lower surfaces of a chip capacitor which is not connected to the first conductive film 24 and the second conductive film 25. The 1C wafer side and the daughter board are connected via the electrode 27. ! Since the printed circuit board of the first modification uses a large chip capacitor 1§20 ′, a chip capacitor with a large capacity can be used. In addition, since the large chip capacitor 20 is used, even if the heating cycle is repeated, the printed circuit board does not bend.

2160-340 3-Ρ ί·p t d 第82頁 499823 丨多、發明說明(79) 參照第1 6圖而說明第2別例之印刷電路本 圖係顯示多數個取用之晶片電容器,圖中一 禾一般的裁斷線,第1 6 ( B )圖係顯示晶片1 圖。如第1 6 ( B )圖所示,該第2別例是以連 中之範例為3枚)多數個取用之晶片電容器 用。 | 該第2別例,因為是使用大型的晶片電笑 容量大的晶片電容器。此外,因為使用大型 2 0,即使重複加熱循環,在印刷電路板亦不 I 上述之實施例,是將晶片電容器内藏於 I内,但是亦可使用在陶瓷板設置導電體膜之 i以取代晶片電容器。 | 根據貝^例3之製造方法’可在核心基本 器’可縮短1C晶片與電容器之距離,而可減 的迴路感抗。此外,積層樹脂基板而可得到 心基板。並且5因為在核心基板的兩面配設 i板、第3樹脂基板,而平滑構成核心基板,后 !基板的上面適當形成層間樹脂絕緣層以及導 低印刷電路板之不良品發生率。 又,根據實施例3之製造方法,介層窗t 依金屬膜的開口徑而定,因此可以適當的開 窗口。同樣地’介層窗口的開口位置精密度 !開口位置而定’因此即使雷射的照射位置精 I在適當的位置上形成介層窗口。 ί。第(A ) 點鏈狀線係顯 【容器的平面 結複數個(圖 j以大型使 | \ :器,可使用 的晶片電容器 會發生彎曲。 印刷電路板 板狀的電容器 i内收容電容 低印刷電路板 充分強度的核 第1樹脂基 3此可在核心 體電路,可減 2的開口徑是 口徑形成介層 亦依金屬膜的 密度低,亦可2160-340 3-P ί · ptd Page 82 499823 丨 Description of Invention (79) The printed circuit of the second example will be described with reference to Figure 16 This figure shows the most used chip capacitors. As for the general cutting line, Fig. 16 (B) shows the wafer 1 picture. As shown in Fig. 16 (B), the second example is a three-chip example. It is used for a large number of chip capacitors. This second example uses a large chip capacitor with a large chip capacitor. In addition, because a large 20 is used, even if the heating cycle is repeated, the printed circuit board is not included in the above-mentioned embodiment. The chip capacitor is built in I, but i can be replaced by a conductive film provided on a ceramic plate. Chip capacitors. The manufacturing method according to Example 3 can be used in the core base unit to shorten the distance between the 1C chip and the capacitor, and reduce the loop inductance. In addition, a resin substrate can be laminated to obtain a core substrate. And because the i-board and the third resin substrate are arranged on both sides of the core substrate, the core substrate is smoothly formed, and an interlayer resin insulation layer is appropriately formed on the rear substrate and the defective rate of the printed circuit board is reduced. In addition, according to the manufacturing method of the third embodiment, the interlayer window t is determined by the opening diameter of the metal film, so that the window can be opened appropriately. Similarly, the opening position precision of the interposer window depends on the opening position. Therefore, even if the laser irradiation position is precise, the interposer window is formed at an appropriate position. ί. The (A) point chain-shaped line shows [the plane junction of the container is plural (Figure j uses a large-scale | The core of the circuit board has sufficient strength. The first resin base 3 can be used in the core circuit. The opening diameter can be reduced by 2. The opening diameter is formed by the aperture. The density of the metal film is also low.

499823 五、發明說明(80) ' ---— ,由=亦可從電容器的下部接續,因此縮短迴路感抗的 距離,是增加配設之自由度的構造。 此外’由於在核心基板與電容器間填充樹脂,因此即 使發生起因於電容器之應力,可被緩和而不會發生偏移。 因此不會影響電容器之電極與介層窗口的接續部的玻璃和 溶解等。因此即使實施信賴性試驗,亦可保持所期望 能。 又’在以鋼坡覆電容器之場合,亦可防止偏移的發 生。 (實施例4 ) 首先’參照第42〜44圖說明有關本發明之實施例4的印 傷 丨刷電路板。第42圖係顯示印刷電路板610的剖面,第43圖 |係顯不第42圖所示之印刷電路板61〇上載置ic晶片690,安丨 裝在子板694側的狀態。第44圖(A )係第42圖中的介層窗 口 660的擴大圖,第44 (B)圖係顯示從箭頭b側看第44 (1 )圖中的介層窗口 660上配設複數個介層窗口 760之狀態。 如第4 2圖所示之印刷電路板6 1 〇是由收容複數個晶片 電容器620之核心基板630與增疊層680A、680B構成之層間| I樹脂絕緣層650所組成。核心基板630所收容之複數個晶片! %谷器62 0之電極621、622式接續相對大的介層窗口 mo。 此外’增疊配線層6 8 0 A、6 8 0 B是由層間樹脂絕緣層了 4 〇、 _ 7 41所組成。層間樹脂絕緣層7 4 0上形成導體電路7 5 8以及 相對小的介層窗口 760,而在層間樹脂絕緣曾741上是形成 |導體電路759以及相對小的介層窗口 764。層間樹脂絕緣; } 曰499823 V. Description of the invention (80) '----, = can also be connected from the lower part of the capacitor, so shortening the distance of the loop inductive reactance is a structure that increases the freedom of deployment. In addition, since the resin is filled between the core substrate and the capacitor, even if stress due to the capacitor occurs, it can be alleviated without shifting. Therefore, it does not affect the glass and dissolution of the junction between the capacitor electrode and the interlayer window. Therefore, even if a reliability test is performed, the desired performance can be maintained. Also, when a capacitor is covered with a steel slope, it is possible to prevent the occurrence of offset. (Embodiment 4) First, a printed circuit board according to Embodiment 4 of the present invention will be described with reference to Figs. Fig. 42 shows a cross section of the printed circuit board 610, and Fig. 43 shows a state where the IC chip 690 is mounted on the printed circuit board 61 shown in Fig. 42 and mounted on the daughter board 694 side. Fig. 44 (A) is an enlarged view of the interposer window 660 in Fig. 42 and Fig. 44 (B) is a view showing the interposer window 660 in Fig. 44 (1) viewed from the arrow b side. State of the via window 760. The printed circuit board 6 10 shown in FIG. 42 is an interlayer | I resin insulating layer 650 composed of a core substrate 630 that houses a plurality of chip capacitors 620 and additional layers 680A and 680B. Multiple wafers housed in the core substrate 630! The electrodes 621 and 622 of% Valleyr 62 0 are connected to a relatively large interlayer window mo. In addition, the superimposed wiring layers 680 A and 680 B are composed of an interlayer resin insulating layer 40 and _ 7 41. A conductor circuit 7 58 and a relatively small interlayer window 760 are formed on the interlayer resin insulation layer 7 4 0, and a conductor circuit 759 and a relatively small interlayer window 764 are formed on the interlayer resin insulation 741. Interlayer resin insulation;

2160-3403-Pi-ptd 第84頁 ---^ 499823 五、發明說明(81) 741上配設銲錫光阻層670 晶片電容器620是由第13(A)圖所示之第1電極“I與第 2電極6 2 2,與夾住第1、第2電極之誘電體2 3所組成,在誘 電體23上相對配置複數枚接續於第1電極621侧之第!導電§ 膜24,與接續於第2電極622側之第2導電膜25。再者,亦 可使兩露出第13 (B)圖所示之電容器620之第1電極21、 第2電極22的披覆28之一部份。因為露出第1電極21、第2 電極2 2可提高與電鐘組成之介層窗口的接續性。2160-3403-Pi-ptd Page 84 --- ^ 499823 V. Description of the Invention (81) 741 is equipped with a solder photoresist layer 670 The chip capacitor 620 is the first electrode shown in Figure 13 (A) "I It is composed of the second electrode 6 2 2 and the electromotive body 23 which sandwiches the first and second electrodes. On the electromotive body 23, a plurality of second electrodes connected to the first electrode 621 side are arranged! The conductive film 24 and The second conductive film 25 is connected to the side of the second electrode 622. Alternatively, two parts of the first electrode 21 and the second electrode 22 of the capacitor 620 shown in FIG. 13 (B) may be exposed to cover 28 The exposure of the first electrode 21 and the second electrode 22 can improve the continuity of the interlayer window with the clock.

如第43圖所示之上側的增疊配線層680A的介層窗口 764上,形成用以接續至IC晶片690的襯墊692的凸塊 67611。另一方面,在下側的增疊配線層68〇6的介層窗口 760上則形成周以接續至子板695的襯墊694之凸&676d。 核心基板是使用樹脂組成者。例如,可使用破璃環氧 树月曰3 π基材、紛樹脂含浸基材等一般印刷電路板所用之 Μ知,锊。然而,不可使羯陶瓷和Α丨Ν等的基板為核心基 板。該基板外型加工性差,無法收容電容器, 填充仍會產生空隙。 沈乂树月曰 ί t卜i因為在形成於核心基板630之凹部734内收容複 。曰曰、,電容器620,因此可以高密度配置晶片電容器 二π 且,因為在凹部734收容複數個晶片電容器620, 6^〇V的嫩晶Λ電容器620的高度°因此可平均晶片電容蒸 Rfin 1 、曰㈢640的高度,而可適當地形成介層窗口 b b U 。卜,ixj vl 一 雜 為可縮短Ϊ C晶片6 9 0與晶片電容器6 2 0的距 離因此可減低迴路感抗。As shown in FIG. 43, a bump 67611 is formed on the interlayer window 764 of the superimposed wiring layer 680A on the upper side to be connected to the pad 692 of the IC chip 690. On the other hand, on the lower interposer window 760 of the superimposed wiring layer 6608, a bump & 676d is formed around the pad 694 which continues to the daughter board 695. The core substrate is made of resin. For example, it can be used for general printed circuit boards, such as a glass-breaking epoxy resin, a 3π substrate, and a resin-impregnated substrate. However, do not use substrates such as ceramics and aluminum substrates as core substrates. This substrate has poor formability and cannot accommodate capacitors, and voids may still be generated during filling. Shen Yueshu said that because of the storage in the recess 734 formed in the core substrate 630. Since the capacitor 620 can be used to arrange the chip capacitors 2π at a high density, and since a plurality of chip capacitors 620 are housed in the recess 734, the height of the 6 ^ 0V tender crystal capacitors 620 can be averaged to the chip capacitance Rfin 1 , The height of ㈢640 can form the interlayer window bb U appropriately. Probably, ixj vl can reduce the distance between the C chip 690 and the chip capacitor 6 2 0 so that the loop inductance can be reduced.

2 160-3403-FI-ptd 第85頁 4998232 160-3403-FI-ptd p. 85 499823

五'發明說明(82) 此外,如第42圖及第43圖的介層窗口 660的擴大圖第 44圖(A )所示,上側的增疊配線層680A的介層窗口 760皋 複數個接續至1個介層窗口 660。第44(B)圖所示之大介層 | I窗口 66〇是内徑125/zm、槽脊徑165/zm,小介層窗口 760泉 内徑2 5 /2 m、槽脊徑6 5 # m。另一方面,晶片電容器6 2 0是 以矩形形成的,第1電極621以及第2電極622也是形成一邊 2 5 0 // m的矩形。因此,晶片電容器6 2 0的配設位置即使是 數十,亦可取得晶片電容器620之第1電極6 21及第2電 I極622與介層窗口 660之接續,可卻實地進行從晶片電容器| | 620到1C晶片690的電力供給。此外,藉由配設複數個介層| I窗口 7 6 0,可得與感抗並列接續同樣的效杲,因此可提高 攀 I電源線以及接地線的高頻率特性,亦可防止電力供給不足 或因接地程度的變動而1C晶片的錯誤動作。並且,可縮短 從1C晶片到晶片電容器620之配線長,因此可減低迴路感 I抗。 ί j 如第42圖所示,在介層窗口 660上,填充電鍍而形成 丨做為表面平坦之填充之介層窗口。藉此,可在介層窗口 660上直接接續複數個介層窗口 760。藉此,可提高介層窗 口 660與介層窗口 760的接續性,可卻實地進行從晶片電容 is 6 2 0至I C晶片6 9 0的電力供給。再者,本實施例是以電= 填充而形成填充之介層窗口,但亦可取而代之,使用在^ ^ 部填充樹脂後’在表面配設金屬膜之填充之介層窗口。 ! 再者,樹脂填充劑633以及晶片電容器62〇下部的接〜| 材料636的熱膨脹率比核心基板630及樹脂絕緣曾64〇小,香Fifth invention description (82) In addition, as shown in FIG. 44 and FIG. 44 (A) of the enlarged view of the via window 660 of FIG. 42 and FIG. 43, the via window 760 of the overlay wiring layer 680A on the upper side is connected in succession. To 1 via window 660. The large interlayer shown in Fig. 44 (B) | I window 66 is an inner diameter of 125 / zm, a ridge diameter of 165 / zm, a small interlayer window of 760, an inner diameter of 2 5/2 m, and a ridge diameter of 6 5 # m. On the other hand, the chip capacitor 6 2 0 is formed in a rectangular shape, and the first electrode 621 and the second electrode 622 are also formed in a rectangular shape with a side 2 5 0 // m. Therefore, even if the placement position of the chip capacitor 6 2 0 is several tens, the connection between the first electrode 6 21 and the second electric electrode 622 of the chip capacitor 620 and the interlayer window 660 can be obtained, and the chip capacitor can be carried out on the spot. | | 620 to 1C chip 690 power supply. In addition, by providing a plurality of interlayers | I window 7 6 0, the same effect as that of the inductive reactance can be obtained in parallel. Therefore, the high-frequency characteristics of the power supply line and the ground line can be improved, and insufficient power supply can be prevented. Or the 1C chip may malfunction due to a change in the degree of grounding. In addition, since the wiring length from the 1C chip to the chip capacitor 620 can be shortened, the loop inductance can be reduced. As shown in FIG. 42, the interlayer window 660 is filled with electroplating to form a filled interlayer window with a flat surface. Thereby, a plurality of vias 760 can be directly connected to the vias 660. Thereby, the continuity of the interlayer window 660 and the interlayer window 760 can be improved, and the power supply from the chip capacitor is 620 to the IC chip 690 can be performed on the spot. Furthermore, in this embodiment, a filled interlayer window is formed by using electric filling, but instead, a filled interlayer window in which a metal film is arranged on the surface after filling the resin with ^^ is used instead. In addition, the thermal expansion coefficient of the resin filler 633 and the lower part of the chip capacitor 62〇 || The material 636 is smaller than the core substrate 630 and the resin insulation 64.

499823 Γ-— I五、發明說明(83) 也就是,設定在陶瓷組成之晶片電容器6 2 0附近。威此, 在加熱循環試驗,在核心基板630及樹脂絕緣層640與晶片 電容器620之間即使發生熱膨脹率造成之内應力,核心基 板6 3 0及樹脂絕緣層6 4 0也難以產生裂痕、剝離等,而能達 |成高信賴性。 ! 此外,因為在晶片電容器620間的樹脂層633上形成貫 穿孔6 5 6,而沒有在陶瓷組成之晶片電容器6 2 0通過信號 線,因此不會發生因高誘電體之感抗不連續之反射以及因 高誘電體通過之傳送延遲。而由於在電容器的下部亦施予 配線,因此可增加配線、拴等的外部端子的自由度5而高 密度化、小型化。 晶片電容器6 2 0,是將如第1 3圖(A)所示之構成第1電 極6 21及第2電極622之金屬層26的表面坡覆銅電鍍膜29。 電鍍膜的坡覆是以電解電鍍、無電解電鍍等的電鍍而形 成。於是’如第42圖所示之披覆銅電鍍膜29之第1、第2電 I極6 21、622上以銅電鍍而成之介層窗口 66〇而得電性接 |續。在此,晶片電容器的電極621、622是在金屬化組成之 I表面上的凹凸。因此,使用露出金屬層26之狀態,在後述 之於樹脂絕緣層6 4 0上穿設開口 6 3 9之步驟,該凹凸上將殘 留樹脂。此時,會發生該樹脂殘留而引起之第1,第2電極 621、622與介層窗口 660的接觸不良。相對於此,本實施 例,藉由銅電鍍膜29而使第1,第2電極621、622的表面平 滑’而在坡覆於電極上的樹脂絕緣層W 〇上穿設開口 6 3 9 ^時,不會殘留樹脂 可提 高形成介層 窗口 60時與電極 499823 I五、發明說明(84) -~---1 | 621、622的接續信賴性。 j ; 並且,形成銅電鍍膜29的電極621、622上,因為以電 鍍形成介層窗口 660,因此增加了電極621、622與介層窗 口 6 60的接續性,即使實施加熱循環試驗,在電極621、 622與介層窗口 660之間亦不會產生斷線。 I 再者,上述銅電鍍膜29,是在搭載上印刷電路板之階 |段,將晶片電容器的製造階段坡覆於金屬層26之表面的鎳| 錫層刎離而設置。取而代之,在晶片電容器62〇的製造階 段,亦可在金屬層26之上直接坡覆銅電鍍膜29。也就是 說’本貫施例在以雷射設置到電極的銅電鍍膜2 9之開口 後’進行去殘渣等處理,而以銅電鍍形成介層窗口。因 I此,在銅電鍍膜29的表面形成氧化膜,因為以上述雷射及I j去殘渣處理除去氧化膜,而可得到適當地接續。 j 此外’亦可在晶片電容器620的陶瓷組成之誘電體23499823 Γ-—I. V. Description of the Invention (83) That is, it is set near the ceramic capacitor 6 2 0 of the chip. For this reason, in the heating cycle test, even if internal stress caused by the thermal expansion coefficient occurs between the core substrate 630 and the resin insulating layer 640 and the chip capacitor 620, it is difficult for the core substrate 6 3 0 and the resin insulating layer 6 4 0 to crack and peel. And so on, and can reach | into a high reliability. In addition, since the through-hole 6 5 6 is formed in the resin layer 633 between the chip capacitors 620, and the chip capacitor 6 2 0 composed of ceramics does not pass through the signal line, no discontinuity due to the inductance of the high electromotive body will occur. Reflection and delay due to transmission through highly electromotive bodies. Furthermore, since wiring is also provided at the lower portion of the capacitor, it is possible to increase the degree of freedom 5 of the external terminals such as wiring and bolts, and to increase the density and size. The chip capacitor 6 2 0 is coated with a copper plating film 29 on the surface of the metal layer 26 constituting the first electrode 6 21 and the second electrode 622 as shown in FIG. 13 (A). The slope of the plated film is formed by electrolytic plating, electroless plating, or the like. Then, as shown in FIG. 42, the first and second electrical electrodes 6 21, 622 coated with copper plating film 29 are plated with copper through the dielectric layer window 66, and electrical connection is obtained. Here, the electrodes 621 and 622 of the chip capacitor have irregularities on the surface of the metallized composition I. Therefore, in a state in which the metal layer 26 is exposed, and an opening 6 3 9 is formed in the resin insulating layer 640, which will be described later, resin will remain on the unevenness. At this time, poor contact between the first and second electrodes 621 and 622 and the interlayer window 660 may occur due to the residual resin. On the other hand, in this embodiment, the surfaces of the first and second electrodes 621 and 622 are smoothed by the copper plating film 29, and an opening 6 3 9 ^ is formed in the resin insulating layer W 0 that covers the electrodes. At this time, no resin remains, which can improve the connection reliability between the electrode 499823 and the electrode 499823 when forming the interlayer window 60. (84)-~ -1 | 621, 622. j; On the electrodes 621 and 622 where the copper plating film 29 is formed, since the interlayer window 660 is formed by electroplating, the continuity between the electrodes 621 and 622 and the interlayer window 6 60 is increased. No disconnection will occur between 621, 622 and the interlayer window 660. I Further, the above-mentioned copper plating film 29 is provided by separating the nickel and tin layers on the surface of the metal layer 26 at the stage of mounting the printed circuit board with the nickel capacitor layer tinned to the surface of the metal layer 26 during the manufacturing stage. Instead, in the manufacturing stage of the chip capacitor 62, a copper plating film 29 may be directly sloped on the metal layer 26. That is to say, in the present embodiment, after the opening of the copper plating film 29 provided with a laser to the electrode is subjected to a process such as residue removal, the interlayer window is formed by copper plating. Therefore, an oxide film is formed on the surface of the copper plating film 29, and the oxide film can be appropriately connected because the oxide film is removed by the above-mentioned laser and I j residue removal treatment. j In addition, it is also possible to use a ceramic composition of the chip capacitor 620 as an inducer 23

的表面上設置粗化層23α。因此,提高陶瓷組成之晶片電 容器620與樹脂組成之樹脂絕緣層64〇的密著性,即使實施 加熱循環試驗也不會發生在界面的樹脂絕緣層6 4 〇之剝 離。該粗化層23 α是在燒成後,藉由研磨晶片電容器62〇 的表面,或在燒成前,施予粗化處理而形成。再者,本實 施例因為對電容器的表面施予粗化處理,而提高了與樹脂 的密著性,但是亦可取而代之在電容器的表面施予矽烷結 合處理。 繼續,參照第37〜42圖而說明有關參照第42圖而上述 |之印刷電路板的製造方法。A roughened layer 23α is provided on the surface of. Therefore, the adhesion between the wafer capacitor 620 made of ceramics and the resin insulation layer 640 made of resin is improved, and even if the heat cycle test is performed, the resin insulation layer 64 is not peeled off at the interface. This roughened layer 23 α is formed by polishing the surface of the wafer capacitor 62 0 after firing, or by subjecting the roughened layer to a roughening treatment before firing. Furthermore, in this embodiment, the surface of the capacitor is roughened to improve the adhesion with the resin, but a silane bonding treatment may be applied to the surface of the capacitor instead. Continuing, the manufacturing method of the printed circuit board described above with reference to FIG. 42 will be described with reference to FIGS. 37 to 42.

2160-3403*-?]-pid 第88頁 4998232160-3403 *-?]-Pid p. 88 499823

五、發明說明(85) U )首先5以絕緣樹脂基板組成之核心基板63(J為出 發材料(參照第37圖(A))。接著,在核心基板630的—I 1面上以埋頭孔加工或在絕緣樹脂上設置通孔,而擠壓,藉 |甴貼合而形成電容器配設用的凹部734 (參照第37(B)圖 )。士時,凹部734是比可配設複數個電容器而寬大形成 的。藉此’可在核心基板6 3 〇上確實地配設複數個電容 器0V. Description of the invention (85) U) Firstly, a core substrate 63 composed of an insulating resin substrate (J is the starting material (refer to FIG. 37 (A)). Then, a countersink is provided on the -I 1 surface of the core substrate 630 Process or provide through-holes in the insulating resin, and extrude them to form capacitor recesses 734 (refer to Figure 37 (B)). The recesses 734 are larger than the number of recesses. Capacitors are formed in a large size. By this, a plurality of capacitors 0 can be reliably arranged on the core substrate 6 3 〇

j 之後,在凹部734上,使用印刷機而塗佈接著材 I |料636 (參照第37 (C)圖)。此時,塗佈以外,亦可以灌I 注三沈積(deposit ing)、貼合接著薄板等方法在凹部塗佈 接著材料。接著材料636是使用熱膨脹率比核心基板小 者。接著,在凹部734上經由接著材料636上接著複數個 瓷組成之電容器620 (參照第37 (d )圖)。在此,藉由在 丨後述之底部平滑的凹部734上配設複數個晶片電容器62〇, ! |而可平均複數個晶片電容器620的高度。藉此,可在後述 步驟,於核心基板630上形成平均厚度的樹脂絕緣層64〇, 而可適當地形成介層窗口 660。 ^是,擠壓複數個晶片電容器620的上面或輕敲而平 均其南度(參照第2 (A)圖),成為複數個晶片電容器 620的上面是相同高度的狀態。藉由此步驟;在凹部⑽内i j配設複數個晶片電容器62G時,即使複數個晶片電容器62〇 j的二小變動,亦可完全地平均其高度,而使核心基板63〇 (3)之後 在凹部734内的晶片電容器620間,填充熱 五、發明說明(86) " 硬化性樹脂,加熱硬化而形成樹脂層633 (參照第38 ( a ) 圖)二此時,熱硬化性樹脂較佳為環氧、酚、聚咪唑、三 啡'藉此可固定在凹部734内的晶片電容器620。樹脂層 ! 633是使罔熱膨脹率比核心基板小者。 ▲ 除此以外5亦可使用熱可塑性樹脂等的樹脂。又為了 整合樹脂中的熱膨脹率,亦可含浸填充劑(f丨丨ler)。該填 充劑為無機填充劑、陶瓷填充劑、金屬填充劑等。 士匕(4 )在其上使用印刷機塗佈後述之環氧系樹脂組成之 树脂塗佈而形成樹脂絕緣層6 4 〇 (參照第3 8 ( B )圖)。再j i者’亦可貼上樹脂薄膜取代塗佈樹脂。 | 士除此以外,可使用一種以上的熱硬化性樹脂、熱可塑 性樹脂、感光性樹脂熱硬化性樹脂與熱可塑性樹脂的複合 體、感光性樹脂與熱可塑性樹脂的複合體等的樹脂。亦可 使用该等2層以上構成之樹脂。 (5 )接著’以雷射在樹脂絕緣層64〇形成相對大的介 j |層窗口用開口 639 (參照第38(c)圖)。之後,進行去殘| 丨潰處理。亦可以曝光”顯像處理取代雷射。於是藉由鑽孔 或雷射在樹脂層633上形成貫穿孔用的通孔644,並加熱硬 化(參照第3 8 ( D )圖)。視場合,亦可施予過錳酸等的 藥液之粗化處理、電漿處理之粗化處理。藉此,可確保粗 化層的密著性。 ,(6)之後,以無電解銅電鍍,在樹脂絕緣層64〇的表 面形成銅電鍍膜729 (參照第39 (A )圖)。亦可取代無電 解電鍍為進行Ni—CU合金為靶材(target)之濺鍍,亦可設After that, on the recessed portion 734, an adhesive material I | material 636 is applied using a printer (see FIG. 37 (C)). At this time, in addition to coating, methods such as depositing, depositing, laminating, and bonding a thin plate may be used to coat the recessed material. The material 636 is made of a material having a smaller thermal expansion coefficient than that of the core substrate. Next, a plurality of ceramic capacitors 620 are bonded to the recessed portion 734 via the bonding material 636 (see FIG. 37 (d)). Here, by arranging a plurality of chip capacitors 620, | on the bottom-smooth recessed portion 734 described later, the height of the plurality of chip capacitors 620 can be averaged. Thereby, a resin insulating layer 64 of an average thickness can be formed on the core substrate 630 in a step described later, and an interlayer window 660 can be appropriately formed. Yes, the upper surface of the plurality of chip capacitors 620 is squeezed or tapped to have an average south degree (refer to FIG. 2 (A)), and the upper surfaces of the plurality of chip capacitors 620 are at the same height. With this step; when a plurality of chip capacitors 62G are arranged in ij in the recess ⑽, even if the two chip capacitors 620j are changed slightly, the height can be completely averaged, and the core substrate 630 (3) The chip capacitors 620 in the recess 734 are filled with heat. V. Description of the invention (86) " A hardening resin is cured by heating to form a resin layer 633 (refer to FIG. 38 (a)). The chip capacitor 620 is preferably epoxy, phenol, polyimidazole, or triphine, which can be fixed in the recess 734. Resin layer! 633 is the one that makes the thermal expansion coefficient of 罔 smaller than that of the core substrate. ▲ In addition, resins such as thermoplastic resins can also be used. In order to integrate the thermal expansion rate in the resin, a filler (f 丨 丨 ler) may also be impregnated. The filler is an inorganic filler, a ceramic filler, a metal filler, or the like. The dagger (4) is coated with a resin composed of an epoxy-based resin described later using a printer to form a resin insulating layer 64 (see FIG. 38 (B)). In addition, j 'can also be affixed with a resin film instead of coating resin. In addition, resins such as thermosetting resins, thermoplastic resins, composites of photosensitive resins, thermosetting resins and thermoplastic resins, and composites of photosensitive resins and thermoplastic resins can be used. Resins composed of two or more layers may be used. (5) Next, a relatively large dielectric layer opening 639 is formed in the resin insulating layer 64 with a laser (refer to FIG. 38 (c)). After that, the residue removal process is performed. It is also possible to perform "exposure" development processing instead of laser. Therefore, a through hole 644 for a through hole is formed in the resin layer 633 by drilling or laser, and is hardened by heating (see Fig. 38 (D)). As appropriate, Roughening treatment of permanganic acid and other chemical liquids and plasma treatment can also be applied. This can ensure the adhesion of the roughened layer. (6) After that, electroless copper plating is used. A copper plating film 729 is formed on the surface of the resin insulating layer 64 (refer to FIG. 39 (A)). It can also be used instead of electroless plating for sputtering of Ni-CU alloy as a target, or

2160-3403-Fi -Ptd 第90頁2160-3403-Fi -Ptd Page 90

499823 ]五、發明說明(87) 一 " " 一 ! 置Ni-Cu合金層,亦可視場合以濺鍍形成後而形成蕪電解 電鍍膜。 (7)接著,在銅電鍍膜729的表面上貼合感光性乾 I膜’而載置光罩,曝光•顯像處理,而形成既定圖案的光| 阻649。於是將核心基板6 30浸潰於電解電鍍液,經由銅電| 鍍膜7 2 9流入電流而在光阻6 4 9非形成部填充電解電鍍6 5 1 (參照第3 9 ( B )圖)。 (8 )再以5 % N a Ο Η剝離除去電鑛光阻6 4 9後,以硫酸與 過氧化鼠的此合液餘刻處理該電錢光阻6 4 9下的銅電鑛膜 | 729而溶解除去,形成銅電鍍膜729與電解銅電鍍膜651所 i組成之填充之介層窗口構造之相對大的介層窗口及介 j層窗口 656。該大的介層窗口直徑較佳為1〇〇〜6〇()/zm之範 圍。特佳為125〜350 /zm。這個場合,是以165 形成。貫 穿孔是以2 5 0 // m形成。於是,在基板的兩面,吹附上餘刻 液’措由餘刻介層自口 660的表面與貫穿孔656的槽脊 (land)表面,而在介層窗口 660及貫穿孔656的全部表面形 !成粗化面6 6 0 α (參照第3 9 ( C )圖)。 (9) 之後’在貫穿孔656内填充以環氧系樹脂為主成 份之樹脂填充劑664,而乾燥(參照第39 (D )圖)。 (10) 經過上述步驟之基板的兩面,以一邊昇溫至 50〜150 t:並以壓力5kg/cm2真空壓著層壓厚度5〇 熱硬 |化性環氧系樹脂(shee t)薄片,而設置環氧系樹脂組成 |層間樹脂絕緣層74 0 (參照第40 (B)圖)。意 I真空度為1 OmmHg,亦可使用環烯烴系樹脂取代環氧夭樹499823] V. Description of the invention (87) A " " A! If Ni-Cu alloy layer is provided, it may also be formed by sputtering to form an electrolytic plating film. (7) Next, a photosensitive dry I film 'is attached to the surface of the copper plating film 729, a photomask is placed thereon, and exposure / development processing is performed to form a predetermined pattern of light | resist 649. Then, the core substrate 6 30 is immersed in the electrolytic plating solution, and a current flows through the copper electrode | plating film 7 2 9 to fill the non-formed portion of the photoresist 6 4 9 with the electrolytic plating 6 5 1 (refer to FIG. 3 (B)). (8) After removing the photoresist photoresist 6 4 9 with 5% Na Na Η, the copper electrostrip film under the photoresist photoresist 6 4 9 is treated with this combined solution of sulfuric acid and peroxide peroxide for a while | 729 is dissolved and removed to form a relatively large interlayer window and interlayer window 656 of a filled interlayer window structure composed of copper electroplated film 729 and electrolytic copper electroplated film 651. The diameter of the large via window is preferably in the range of 100 to 60 () / zm. Particularly good is 125 ~ 350 / zm. In this case, it is formed by 165. The perforation is formed at 2 5 0 // m. Then, on both sides of the substrate, an etching solution is blown on. The surface of the opening 660 and the land surface of the through-hole 656 are etched, and the entire surface of the interlayer window 660 and the through-hole 656 is etched. Shape! Form a roughened surface 6 6 0 α (refer to Figure 39 (C)). (9) After that, the through-hole 656 is filled with a resin filler 664 containing an epoxy resin as a main component and dried (refer to FIG. 39 (D)). (10) Both sides of the substrate after the above steps are heated to 50 ~ 150 t on one side: and a pressure of 5 kg / cm2 is used to press and laminate a thickness of 50 thermosetting epoxy resin sheets (shee t), and An epoxy resin composition | interlayer resin insulating layer 74 0 is provided (refer to FIG. 40 (B)). The vacuum degree is 1 OmmHg. Cycloolefin resin can also be used instead of epoxy lime tree.

2160-3403-Pi-ptd 第91頁 499823 五、發明說明(88) 脂。 U接4,以C〇2氣體雷射,在層間樹脂絕緣層74〇 上設置6 5 // in之相對小介層窗口用開口 6 4 2 (參照第4 〇 ( b )圖)。相對小介層窗口的直徑較佳為25〜1〇〇 “瓜之範 圍。之後使用氣電槳進行去殘渣處理。2160-3403-Pi-ptd Page 91 499823 V. Description of the Invention (88) Fat. U is connected to 4, and a CO2 gas laser is provided on the interlayer resin insulation layer 74o to provide a relatively small interlayer window opening of 6 5 // in 6 4 2 (refer to FIG. 4 (b)). The diameter of the relatively small interlayer window is preferably in the range of 25 to 100 "melons. After that, the residue is removed using a gas-electric paddle.

I (12)接著,使用日本真空技術公司製造的進 行去殘渣處理’粗化層間樹脂絕緣層74〇的表面,而形 粗=646 (參照第4() (c)圖)。此時,使用氬氣體為惰 性巧而以電力200W、氣體壓力〇.6Pa、溫度7(rc的條 件,實施2分鐘電紫處理。亦可以氧或氧化劑實施粗 理。又,粗化層較佳為〇·〗〜5以瓜。 德吏用同樣裝4 ’交換内㉝的氬氣氣體 爰 …U為靶材而濺鍍,在氣壓〇· 6pa、溫度8〇 t、 力2 0 0 f、時間5分鐘的格杜、隹— 電 μ I ^ π 的條件進仃,而在層間樹脂絕緣層740 的表面上形成Ni-Cu合屬® LL 士 層648的厚度為〇. 2 _ t6昭48。此;;’形成之Ni-Cu金屬 /xm I參照第4〇 (d)圖)。亦可a紅+ 解電=的上鑛膜、或濺鍍上施加電鑛膜。 的感光性乾膜'成而上載逑處理之基板63°:兩面^ ^ 以0.8%碳酸納顯像處膜’以1GGm"㈣2曝光後, 650。接著,以下列 厚度15㈣的電路光阻 電解電鍍膜652 (參;電鍍,而形成厚度15_ 溶液中的添加劑為;:、f 41 ( Α )圖)°再者’電解電鍍水 力HL。 - 公司製造的 499823 五、發明說明(89) [電解電鍍水溶液]I (12) Next, the surface of the interlayer resin insulating layer 740 was roughened using a residue removal treatment process made by Nippon Vacuum Technology Co., Ltd. to have a thickness of 646 (see Fig. 4 () (c)). At this time, argon gas is used as the inert gas, and the electric violet treatment is performed for 2 minutes under the conditions of electric power of 200 W, gas pressure of 0.6 Pa, and temperature of 7 (rc). Roughening may also be performed using oxygen or an oxidizing agent. A roughened layer is preferred For 〇 ·〗 ~ 5, melon. German officials used the same 4 ′ exchange argon gas 爰 ... U as the target and sputtered at a pressure of 0.6pa, a temperature of 80t, a force of 20f, The time of 5 minutes of Gedu, 隹 —electrical μ I ^ π conditions, and the thickness of the Ni-Cu alloy ® LL layer 648 formed on the surface of the interlayer resin insulation layer 740 is 0.2 _ t6 昭 48 This ;; 'formed Ni-Cu metal / xm I refer to Figure 40 (d)). It is also possible to apply a red + electro-deposited upper ore film, or to apply an electric ore film on sputtering. The photosensitive dry film was formed and the substrate was processed at 63 °: on both sides ^ ^ The film was developed with 0.8% sodium carbonate imaging film after exposure with 1GGm " 2, 650. Next, the following circuit photoresist electrolytic plating film 652 with a thickness of 15 ((see; electroplating to form an additive in the solution with a thickness of 15_ is: f, (f 41 (A))) ° Furthermore, the electrolytic plating hydraulic HL. -499823 made by the company V. Description of the invention (89) [Electrolytic plating solution]

2.24mo 1 / 1 0.26 ηι ο 1 / 1 μ > 公司製造的 19.5 mo 1 / 1 1 A / d m2 6 5分鐘 22 ± 2 °C 硫酸 硫酸銅2.24mo 1/1 0.26 η ο 1/1 μ > 19.5 mo 1/1 1 A / d m2 manufactured by the company 6 5 minutes 22 ± 2 ° C sulfuric acid copper sulfate

添加劑(7 h夕C ^ ^ '> F HL ) [電解電鍍條件] 電流密度 時間 溫度 (15)以5 %NaOH剝離除去電鍍光阻wo後,以硝酸以 及硫酸與過氧化氫的混合液触刻該電鑛光阻下的N i -Cu金 1層648而溶解除去,而形成接續於…—Cu金屬層648與電 解鋼電鍍膜652所組成之厚度導體電路7 58以及介層窗口 6 6 0上之複數個相對小介層窗口 ? 6 〇 (參照第41 ( b )圖 ^。本^施例s藉由介層窗口66〇之填充之介層窗口構 ^ 可直接接續複數個介層窗口 760於介層窗。 接著,參照第43圖而說明將ic晶片載置到完 :之印刷電路湖(參照第42圖)以及安裝至子成板上乂; 銲!==銲錫襯墊692對應到完成之印刷電路板61〇的 鲜錫凸塊676U,而載置IC晶片690,以進行軟溶 晶片690。同樣地,將子板695的襯墊β9ι對應到 \ ;61°的銲錫凸塊6鳩,以進行軟溶而將印刷電 裝至子板695。 邓彳电路板610安 上述之樹脂薄膜是含有難溶性樹脂、可溶性粒子、硬Additive (7 h at C ^ ^ '> F HL) [Electrolytic plating conditions] Current density time temperature (15) stripped with 5% NaOH to remove the plating photo resist wo, then contacted with a mixture of nitric acid and sulfuric acid and hydrogen peroxide The Ni-Cu gold 1 layer 648 under the electric photoresist is engraved and dissolved and removed to form a conductor circuit 7 58 and a dielectric window 6 6 which are composed of Cu metal layer 648 and electrolytic steel plating film 652. Multiple relatively small interposer windows on 0? 60 (refer to FIG. 41 (b)). In this embodiment, the via window structure filled with the via window 66 is used to directly connect a plurality of via windows 760 to the via window. Then, refer to page 43. The figure illustrates the placement of the IC chip on the printed circuit lake (refer to Figure 42) and the mounting on the daughter board; solder! == solder pad 692 corresponds to the fresh tin of the completed printed circuit board 61 The bump 676U is placed on the IC chip 690 to perform the soft dissolving wafer 690. Similarly, the pad β9m of the daughter board 695 is corresponding to the solder bump 6 dove of 61 ° for soft dissolving and printing is performed. It is mounted to the daughter board 695. The above-mentioned resin film is composed of hardly soluble resin, soluble particles, hard

刊9823Issue 9823

化劑、其他成份者。 j (實施例4之第1改變例) ! 繼續,參照第52圖說明本發明之實施例4的第1改變例 |之印刷電路板61 2。上述之實施例4,是以配設BGA之場人 說明。實施例4之第1改變例與實施例4大致相同,但是: 如第52圖所示經由導電性接觸拴69 6而接續PGA方式而椹 成。 繼續參照第45〜5圖說明參照第32圖而上述之本發明之 實施例4之第1改變例之印刷電路板的製造方法。 j (1)首先,在將4枚含浸於環氧樹脂之接著用樹脂層Chemical agents, other ingredients. j (First Modified Example of Embodiment 4)! Continuing, a printed circuit board 61 2 of a first modified example of Embodiment 4 of the present invention will be described with reference to FIG. 52. The above-mentioned embodiment 4 is explained by the person who sets up the BGA. The first modified example of the fourth embodiment is substantially the same as that of the fourth embodiment, but is formed by continuing the PGA method via the conductive contact bolt 69 6 as shown in FIG. 52. The manufacturing method of the printed circuit board according to the first modification of the fourth embodiment of the present invention described above with reference to FIG. 32 will be described with reference to FIGS. 45 to 5 continuously. j (1) First, four resin layers are impregnated with epoxy resin,

638積層而成積層板730α上,形成晶片電容器收容用通孔 733a。又,另一方面,準備將2牧接著用樹脂層638積層而 成積層板730 /3 (參照第45 ( A )圖)。在此,除了環氧以 I外,可使用含有BT、酚樹脂、或剝離布等的強化材料做為 |接著用樹脂層6 3 8而得。 ' j (2)接著,壓著積層板730α及積層板730泠5使其加 熱硬化’形成具備可收容複數個晶片電容器620之凹部735 之核心基板6 3 0 (參照第4 5 ( Β )圖)。 (3 )於是,在凹部7 3 5的電容器配設位置上使用灌注638 is laminated on the laminated plate 730α to form a chip capacitor receiving through hole 733a. On the other hand, it is prepared to laminate the two layers with the resin layer 638 to form a laminated plate 730/3 (see FIG. 45 (A)). Here, in addition to epoxy and I, a reinforcing material containing BT, a phenol resin, or a release cloth can be used as the | then obtained by using a resin layer 6 3 8. 'j (2) Next, the laminated plate 730α and the laminated plate 730 and 5 are laminated and heated to be hardened. A core substrate 6 3 0 having a recessed portion 735 capable of accommodating a plurality of chip capacitors 620 is formed 6 3 0 (refer to FIG. 4 5 (B). ). (3) Therefore, infusion of capacitors in the recesses 7 3 5 is used.

(dispenser)而塗佈接著材料636 (參照第45 (C )圖)。 或者,以印刷、晶片接合(die bonding)、貼合接著薄板 j寺的方法在凹部塗佈接著材料。之後,在凹部735内經由 接著材料636而收容陶瓷組成之複數個晶片電容器620 (參 照第45 (D )圖)。 少(dispenser) and apply the adhesive material 636 (see FIG. 45 (C)). Alternatively, a bonding material may be applied to the recessed portion by printing, die bonding, and bonding to a thin plate. Thereafter, a plurality of chip capacitors 620 made of ceramic are housed in the recess 735 via the bonding material 636 (see FIG. 45 (D)). less

五、發明說明(91) π # 之後,在凹部735内的晶片電容器62〇間填充熱硬 、:二’ i口熱硬化而形成樹脂層633 (參照第46 (A)圖 4。t: ’熱硬化性樹脂較佳為環氧、.、聚味口坐、三 啡。豬此可固定凹部735内的晶片電容器620。 Λ #v5二亚且,在其上使用印刷機塗佈後述之環氧系樹脂 ‘且成之松脂塗佈而形成樹脂絕緣層640 (參照第46 (B)圖 )再者,^可貼上樹脂薄膜(f i 1 m)取代塗佈樹脂。V. Description of the invention (91) π # After that, the chip capacitors 62 in the recess 735 are filled with a thermosetting resin: thermosetting by two holes to form a resin layer 633 (refer to FIG. 46 (A), FIG. 4; t: ' The thermosetting resin is preferably epoxy, polystyrene, or polyphenol. The chip capacitor 620 in the recessed portion 735 can be fixed to the pig. Λ # v5 二 亚 And the ring described later is applied using a printer. Oxygen-based resins are coated with turpentine to form a resin insulating layer 640 (see FIG. 46 (B)). Alternatively, a resin film (fi 1 m) may be attached instead of the coating resin.

(6) 接著,以曝光顯像處理或雷射在樹脂絕緣曾64〇 上形成相對大的介層窗口用開口 63 9 (參照第46 (c )圖 )。該大的介層窗口直徑較佳為1〇〇〜6〇() 之範圍。特佳 為125〜350 /zm。這個場合,是以165 /2m形成。於是,在樹 脂層633上以鑽孔或雷射形成25〇 直徑的貫穿孔用通孔 6 44,並加熱硬化(參照第46 (D )圖)。 (7) 於是,賦予基板63〇鈀觸媒,浸潰核心基板於無 ! 電解電鍍液中,而平均析出無電解電鍍膜745 (參照第47 (A )圖)。 … S 之後,在形成無電解電鍍膜74 5之開口 639之内部 填充樹脂填充劑,乾燥。藉此,在開口 639的内部形成樹 脂層747 (參照第47 (B )圖)。(6) Next, a relatively large opening for an interposer window 63 9 is formed on the resin insulator 64 by exposure development processing or laser (see FIG. 46 (c)). The diameter of the large via window is preferably in the range of 100 to 60 (). Particularly good is 125 ~ 350 / zm. In this case, it is formed at 165 / 2m. Then, through holes or lasers with a diameter of 25 mm are formed in the resin layer 633 by drilling or laser, and heat-hardened (see FIG. 46 (D)). (7) Then, palladium catalyst was applied to the substrate, and the core substrate was immersed in the electroless plating solution, and the electroless plated film 745 was deposited on average (see FIG. 47 (A)). … S, the inside of the opening 639 of the electroless plated film 74 5 is filled with a resin filler and dried. Thereby, a resin layer 747 is formed inside the opening 639 (refer to FIG. 47 (B)).

之後,在無電解電鍍膜745的表面貼合感光性乾膜, i並載置光罩薄膜,而曝光β顯像處理,而形成既定圖案的 !光阻649。於是,將核心基板630浸潰於電解電鍍液中,從 I無電解電鍍膜成為蓋電鍍7 51 (參照第47 (C)圖)。 (9)上述步驟後,再以5%NaOH剝離除去電鑛光阻After that, a photosensitive dry film is laminated on the surface of the electroless plated film 745, and a photomask film is placed on the surface of the electroless plated film 745, and exposed to beta development processing to form a predetermined pattern of photoresist 649. Then, the core substrate 630 is immersed in the electrolytic plating solution to change from the electroless plating film to the cap plating 7 51 (see FIG. 47 (C)). (9) After the above steps, strip and remove the photoresist with 5% NaOH

^160-3403-Fi -ptc 第95頁 499823 五、發明說明(92) 後以知L I與過氧化虱的混合液飿刻處理該電鍍光阻β 4 9 下的無電解電鍍膜745而溶解除去,形成填充之介層窗口 之構造的相對大的介層窗口661及貫穿孔656 (參照第47 、1))圖/ 。藉由该介層窗口⑽1為填充之介層窗口之構 造,可在後述之步驟1個介層窗口661上直接接續複數個介 層窗口760 。 (10)於是,水洗、酸性脫脂基板630後,軟蝕刻 (soft etching),接者,在基板63〇的兩面吹附上鍅刻 之蝕刻液 液,蝕刻介層窗口 661的表面與貫穿孔656的槽脊表面與内 壁,而a在介層窗口 661及貫穿孔656的全部表面形成粗化面 6 63 (芩照第48 (A )圖)。蝕刻液是使用咪唑銅(丨丨)複 合體10重量部、乙二醇酸7重量部、氯化鈉5重量部所組成 (11)接著,將雙酚F型環氧單體(油化> t儿公司製 造,分子显.310,YL983U) 100重量部,在表面塗佈矽烷 結合劑之平均粒徑1 · 6 // m、最大粒子的直徑為丨5 # m以下 之Si02球狀粒子(秦F亍·ν夕公司製造、CRS 1 1 01 -CE ) 1 7〇 重量部以及平面劑(1 eve 1 1 i ng)(梦> /文3 公司製造之 e p y 以)1 · 5重量部置於容器中,藉由攪拌混合而 调製成在23± 1 c之黏度為45〜49 Pa 的樹脂填充劑。再 者,使用咪。坐硬化劑(四國化成公司製造,2E4MZ-CN ) 6 · 5重量部做為硬化劑。^ 160-3403-Fi-ptc Page 95 499823 V. Description of the invention (92) The electroless plating film 745 under the plating photoresist β 4 9 was etched with a mixed solution of LI and peroxide lice to dissolve and remove A relatively large via window 661 and a through-hole 656 (refer to 47, 1) forming the structure of the filled via window are shown in FIG. With the structure of the interposer window ⑽1 as a filled interposer window, a plurality of interposer windows 760 can be directly connected to one interposer window 661 in the step described later. (10) Then, after washing the substrate 630 with acid and degreasing, soft etching is performed. Then, the etching solution is etched on both sides of the substrate 63 and the surface of the via window 661 and the through hole 656 are etched. Ridge surface and inner wall, and a forms a roughened surface 6 63 on the entire surface of the interposer window 661 and the through hole 656 (refer to FIG. 48 (A)). The etching solution is composed of 10 parts by weight of copper imidazole (丨 丨) composite, 7 parts by weight of glycolic acid, and 5 parts by weight of sodium chloride. (11) Next, the bisphenol F-type epoxy monomer (oilification >; manufactured by t children's company, molecular weight .310, YL983U) 100 parts by weight, coated with silane bonding agent on the surface average particle diameter of 1 · 6 // m, the largest particle diameter of Si02 spherical particles below 5 # m (Manufactured by Qin F 亍 · ν Xi Co., CRS 1 1 01 -CE) 1 70 weight part and plane agent (1 eve 1 1 i ng) (Dream > / text 3 manufactured by Epy) 1 · 5 weight The part is placed in a container, and a resin filler having a viscosity of 45 to 49 Pa at 23 ± 1 c is prepared by stirring and mixing. Also, use microphones. Set hardener (manufactured by Shikoku Chemical Co., Ltd., 2E4MZ-CN) 6 · 5 parts by weight as hardener.

之後’在貫穿孔656内填充樹脂填充劑646,並乾燥 (參照第48 (B )圖)。After that, the resin filler 646 is filled in the through-holes 656 and dried (see FIG. 48 (B)).

21 60-3403-Ρί ·ρΐα 第96頁 五、發明說明(93) (U)接著,將雙酚人型環 化> n公司製造之工3 —卜月曰(環氧當量469、油 §每酚醛固形物型環氧樹脂(環氧1!弋)30重量部、甲酚 工業公司製造之工Nl67" $215、大日本hk化學 構造之㈣搭固形物環氧樹月旨m旦2三哄 日本Ink化學工業公司製造 虱乳基田1120、大 量部邊攪拌邊加熱溶解於乙A KA — 7〇52 ) 30重 乙二醇乙酸醋2〇重量部、 一嬌後 f于并 一^^,,再添加末端環氧化之聚丁 「烯橡膠(力π化成工業公司製造之尹“.山 /3:)51 重If部與2—苯基—4,5—雙(氫氧甲基)味唾 ΐ ί I,r ,' ^ ^ ^ ^ ^ ^ ^ ^ #10. 5 t 里部而调製%氧樹脂組成物。 里 : 將所知之環氧樹脂組成物以滾輪塗佈機塗佈於厚 //m之PET薄膜上乾燥後的厚度成為5〇 之後,藉由在a 80〜120 C乾燥10分鐘而製作層間樹脂絕緣層用樹脂薄膜。 0 3)在基板之兩面上,載置比以(12)製作之基板63〇 稍微大的層間樹脂絕緣層用樹脂薄膜,在堡力4 k g f / c m2、 溫度8 0 °C、壓著時間1 〇秒的條件壓著而裁斷後,再以下列 方法使用真空層壓機裝置而藉由貼上,形成層間樹脂絕綠 層740 (第48圖(C))。即,在基板630上以真空度0.5 Torr、壓力4 kgf/cm2、溫度80°C、壓著時間60秒的條件 壓著層間樹脂絕緣層用樹脂薄膜,其後,在1 70 °C使其熱 硬化3 0分鐘。21 60-3403-Ρί · ρΐα Page 96 V. Description of the Invention (93) (U) Next, the bisphenol humanoid is cyclized > Engineering 3 made by N Corporation-Bu Yue Yue (epoxy equivalent 469, oil § 30 parts by weight per phenolic solid epoxy resin (epoxy 1! 弋), manufactured by Cresol Industry Co., Ltd. " $ 215, Dainippon hk chemical structure, built solid epoxy tree, m 旨 2, 3 times Japan Ink Chemical Industry Co., Ltd. manufactures lice milk base 1120, a large number of parts are heated and dissolved in beta A KA-7052 while stirring) 30 weight ethylene glycol acetic acid 20 weight parts. , And then add the terminal epoxidized polybutene rubber (yin manufactured by Li Pi Kasei Kogyo Kogyo Co., Ltd .. 51) If the heavy part and 2-phenyl-4,5-bis (hydrogenmethyl) flavor Saliva ί I, r, '^ ^ ^ ^ ^ ^ ^ ^ # 10. 5 t inside to prepare a% oxygen resin composition. Inside: The known epoxy resin composition is applied to a PET film having a thickness of // m by a roller coater, and the thickness is 50%, and then dried at a 80-120 C for 10 minutes to produce an interlayer. A resin film for a resin insulating layer. 0 3) On both sides of the substrate, a resin film for an interlayer resin insulation layer slightly larger than the substrate 63 prepared in (12) is placed, at a pressure of 4 kgf / c m2, a temperature of 80 ° C, and a pressing time After being pressed and cut under the conditions of 10 seconds, it was pasted using a vacuum laminator apparatus in the following manner to form an interlayer resin green layer 740 (Fig. 48 (C)). That is, the resin film for an interlayer resin insulating layer was laminated on the substrate 630 under the conditions of a vacuum of 0.5 Torr, a pressure of 4 kgf / cm2, a temperature of 80 ° C, and a pressing time of 60 seconds, and thereafter, it was allowed to stand at 1 70 ° C. Heat hardened for 30 minutes.

2ί60-3403-Ρί-ptd 第97頁 4998232ί60-3403-Ρί-ptd p.97 499823

%,百间衡脂絶緣層 五、發明說明(94) ! (14)接著% , Hundred Fatty Fat Insulating Layer V. Description of the Invention (94)! (14)

1.2麗之貫通孔75h的光罩757,以⑶2氣體雷射在厚U 脂絕緣層740上形成直徑65 之相對小介層窗口 树1.2 Photomask 757 with 75h of through holes, with a CD2 gas laser on the thick U-lipid insulation layer 740 to form a relatively small interlayer window with a diameter of 65 trees

642 (第48圖(D))。相對小介層窗口直徑較 /zm之範圍。 v J ibU (15)將形成介層窗口用開口 642之基板63〇浸潰於含 有60g/l之過猛酸的溶液中1〇分鐘,溶解除去存在於層間 j樹脂絕緣層740之表面的環氧樹脂粒子5而使含有介^ ^ | 口用開口 642之内壁之層間樹脂絕緣層74〇的表面為粗S化面I I 646 (第49圖(A))。亦可以酸或氧化劑施予粗化處理。 又,粗化層較佳為〇 · 1〜5 // m。 (1 6 )接著,將完成上述處理之基板6 3 〇浸潰於中和溶 液(〉p γ公司製造)中而水洗。再藉由給予粗面化處 理(粗化深度3 # m )之該基板的表面鈀觸媒,而使觸媒核 |附著在層間樹脂絕緣層740的表面以及介層窗口用開口 642 j I的内壁面。 | I | (17)接著,將基板浸潰於下列組成之無電解銅電鍍 水溶液中’而在粗化面646全體形成厚度〇·6〜3.0/zm之無 電解銅電鍍膜763 (第49圖(B))。642 (Figure 48 (D)). The diameter of the relatively small interposer window is in the range of / zm. v J ibU (15) The substrate 63 that forms the opening 642 for the interlayer window is immersed in a solution containing 60 g / l of peracid for 10 minutes, and the ring existing on the surface of the interlayer j resin insulating layer 740 is dissolved and removed. Oxygen resin particles 5 so that the surface of the interlayer resin insulating layer 74o containing the inner wall of the mouth opening 642 is a roughened surface II 646 (Fig. 49 (A)). The roughening treatment may be performed with an acid or an oxidizing agent. The roughened layer is preferably 0. 1 to 5 // m. (16) Next, the substrate 630, which has been subjected to the above-mentioned processing, is immersed in a neutralization solution (> p γ) and washed with water. The catalyst core is attached to the surface of the interlayer resin insulation layer 740 and the opening 642 j I of the interlayer window by applying a palladium catalyst on the surface of the substrate with a roughening treatment (roughening depth 3 # m). Inner wall surface. I | (17) Next, the substrate was immersed in an electroless copper electroplating aqueous solution having the following composition, and an electroless copper electroplated film 763 (Fig. 49) having a thickness of 0.6 to 3.0 / zm was formed on the entire roughened surface 646. (B)).

II

ί 【無電解電鍍水溶液】 L 〇β 003 mol/1 0,200 m ο 1 / 1 0.030 mol/1 0·050 mol/1 J NiS04 1 酒石酸 I 硫酸銅ί [Aqueous solution of electroless plating] L 〇β 003 mol / 1 0,200 m ο 1/1 0.030 mol / 1 0 · 050 mol / 1 J NiS04 1 Tartrate I Copper sulfate

HCHOHCHO

2160-3403-Pi.pid 第98頁 499823 I五、發明説明(95) | I Na0H 〇. 100 mol/1 a 5 α -雙吼唆基(bipyridyl ) 40mg/l 聚乙烯乙二醇(PEG)(Kl〇g/i ! 【無電解電鍍條件】 j 35 °C之液體溫度4〇分鐘 I (丨8)將市售之感光性乾膜貼附於無電解銅電鍍膜763 上,載置光罩,以100mj/cm2曝光,藉以0·8%碳酸鈉水溶 液顯像處理,而設置厚度30/zm之電鍍光阻650 (第13圖 ! (▲))〇接著以50它的水洗淨基板6 30而脫脂,以25°(:的 | |水水洗後,再以硫酸洗淨,以下列條件施予電解銅電鍍, I形成厚度20 /ΖΠ1之電解銅電鍍膜652 (第49圖(C ))。 I 【電.解電鍍水溶液】 硫酸 2. 24 mol/i 硫酸銅 0. 2 6 mol/1 19,5 mo 1 / 1 公司製造,方.,、? 5 > P HL ) lA/dm2 6 5分鐘2160-3403-Pi.pid Page 98 499823 I. Description of the invention (95) | I Na0H 〇. 100 mol / 1 a 5 α-Bipyridyl 40mg / l Polyethylene glycol (PEG) (KlOg / i! [Electroless plating conditions] j Liquid temperature of 35 ° C for 40 minutes I (丨 8) A commercially available photosensitive dry film was attached to the electroless copper plating film 763, and light was placed thereon. The mask was exposed at 100mj / cm2, and then developed with a 0 · 8% sodium carbonate aqueous solution to develop a plating resist 650 with a thickness of 30 / zm (Fig. 13! (▲)). Then the substrate was washed with 50 of its water. 6 30 and degreased, washed with 25 ° (: | | water, washed with sulfuric acid, and applied electrolytic copper plating under the following conditions, to form an electrolytic copper plating film 652 with a thickness of 20 / ZΠ1 (Figure 49 (C )). I [Electrolytic solution of electroplating] sulfuric acid 2. 24 mol / i copper sulfate 0.2 26 mol / 1 19,5 mo 1/1 manufactured by the company, square ,,? 5 > P HL) lA / dm2 6 5 minutes

添加劑 (7 h y 夕 A > 【電解電鍍條件】 電流密度 時間Additive (7 h y y A > [Electrolytic plating conditions] Current density time

溫度 2 2 ± 2 | ( 1 9 )以5%NaOH將電鍍光阻6 5 0剝離除去之後,以硫酸 |與過氧化氫的混合液餘刻處理而溶解除去上述電鍛光阻 j 650下的無電解電鍵膜763,形成無電解銅電鍍膜Mg與電 解銅電鍍膜652組成之厚度18 //m之導體電路758及相對小 499823 五、發明說明(96) 介層窗口760 (參照第49圖(D ))。之後" 樣處理,以含有第二銅錯體與有機酸之蝕列J行與(1〇)同 面6 6 2 (參照第5 0圖(A ) ) 。 x液’形成粗化 (2 0 )繼續,藉由反覆操作上述丨3〜丨9 + 上層的層間樹脂絕緣層741及導體電路q、,V驟,再形成 764 (參照第50圖(B ) ) 。 1及介層窗口 (21) 接著,與實施例!同樣地得到調整 成物(有機樹脂絕緣材料)。 、干、先阻組 (22) 接著,在多層電路基板的兩面,以 塗佈(2 1 )調製的銲錫光阻組成物。之後進行以7 〇艺$ 〇 =度 鐘、70°C 30分鐘的條件進行乾燥處理後,在銲錫光阻= 物密著描繪有銲錫光阻開口部圖案的厚度5mm之光罩,'而 以lOOOmJ/cm2的紫外線曝光,又以DMTG溶液顯像處理,形 成直徑開口 6 71U、6 71 D。 於是分別以81TC1小時' 10(TC1小時、12〇。(:1小時的 條件進行加熱處理而硬化銲錫光阻組成物,形成具有開口Temperature 2 2 ± 2 | (1 9) After stripping and removing the plating photoresist 6 50 with 5% NaOH, it was treated with a mixed solution of sulfuric acid | and hydrogen peroxide to dissolve and remove the photoresist under the electric forging photoresist j 650. The electroless key film 763 forms a conductor circuit 758 with a thickness of 18 // m and a relatively small 499823 composed of the electroless copper plating film Mg and the electrolytic copper plating film 652. V. Description of the invention (96) The interlayer window 760 (refer to FIG. 49) (D)). After " like processing, the row J containing the second copper complex and the organic acid is the same as (10), 6 2 (refer to Figure 50 (A)). The formation of the x liquid 'is roughened (20), and the above-mentioned interlayer resin insulating layer 741 and the conductor circuits q, and V are repeatedly formed by repeatedly operating the above-mentioned 丨 3 to 丨 9, and then formed 764 (refer to FIG. 50 (B)). ). 1 and the interlayer window (21) Next, and the embodiment! In the same manner, a finished product (organic resin insulating material) is obtained. Dry, first-resistance group (22) Next, on both sides of the multilayer circuit board, a solder resist composition prepared by (2 1) is applied. After that, a drying process was performed under the conditions of 70 ° C = 0 ° C and 70 ° C for 30 minutes, and then a solder mask = a mask having a thickness of 5 mm, in which the opening pattern of the solder mask was drawn in close contact. 1000mJ / cm2 ultraviolet exposure, and then treated with DMTG solution development, forming diameter openings 6 71U, 6 71 D. Therefore, heat treatment was performed at 81TC for 1 hour and 10 (TC for 1 hour, and 120% for 1 hour) to harden the solder resist composition to form openings.

671U、671D之厚度2〇 //m之銲錫光阻層670 (參照第51 (A y圖)°上述銲錫光阻組成物亦可使用市售之銲錫光阻組 成物。671U, 671D solder resist layer 670 with a thickness of 20 // m (refer to Figure 51 (A y)) ° The above-mentioned solder resist composition can also use a commercially available solder resist composition.

(23) 接著,將形成銲錫光阻層670之基板,與實施例 1相同地浸潰於無電解電鍍液中,而在開口部6 71 U、6 71 D 形成厚度5 //m之鎳電鍍層672。再將該基板與實施例1同樣 地浸潰於無電解金電鍍液中,於鎳電鍍層672上,形成厚 度L〇3//m之金電鍍層674 (第51圖(B))。(23) Next, the substrate on which the solder resist layer 670 is formed is immersed in an electroless plating solution in the same manner as in Example 1, and nickel plating with a thickness of 5 // m is formed in the openings 6 71 U and 6 71 D. Layer 672. This substrate was immersed in an electroless gold plating solution in the same manner as in Example 1 to form a gold plating layer 674 having a thickness of L03 / m on the nickel plating layer 672 (Fig. 51 (B)).

2160-3403-?!-ptd 第100頁 五、發明說明(97) 、24)之後,在基板的载置 曰 的開口671U上印刷含有錫_鉛面的銲錫光阻層670 開口部6m内印刷銲錫膠做為:電阻。=另:,的 在適當的拴保持裝置上裝上導 ^者一697。接者, 導電性接觸拴696的固定部6 98 # 拴696而支持,將 接著劑m。於是進行軟^98將接部6川内的導電性 接著劑697固^。誘導電性接觸^㈣拴696以導電性 守电1生接觸拴6 96的安裝方法杲骆邋恭 性接者劑6 9 7接合至固定邮r q δ工& # % 之後亦可使其軟溶 8而女裝導電性接觸細6,2160-3403-?!-Ptd Page 100 V. Description of the invention (97), 24) After that, a solder photoresist layer 670 containing a tin-lead surface is printed on the opening 671U of the substrate, and printed within 6m of the opening. Solder glue as: resistance. = Another:, Attach guide 697 to the appropriate tether retaining device. Then, the conductive portion 6 98 # of the fixed portion of the bolt 696 is supported by the bolt 696, and then the adhesive m is adhered. Then, the soft adhesive 98 is used to fix the conductive adhesive 697 in the junction 6A. Induction of electrical contact ^ ㈣ 696 with conductive electrical contact 1 接触 6 96 Installation method 杲 邋 邋 Receptive agent 6 9 7 Bonding to fixed mail rq δ worker &#% can also make it soft Solve 8 while women's conductive contact fine 6,

\ 之後,將iC晶片690的銲錫襯墊692以對應至印刷雷 I,板612的開口671_的銲錫凸塊676U的狀態,載置心 |片69G,而以軟溶進行ic晶片_的安裝(參照第^圖)。 實施例4的第2改變例)After that, the solder pad 692 of the iC chip 690 is placed in a state corresponding to the solder bump 676U of the opening 671_ of the printing mine I, the plate 612, and the core piece is 69G, and the IC chip is installed with a soft solution. (Refer to Figure ^). (Second modification of embodiment 4)

、孩、、’|參照苐5 3圖說明關於本發明之實施例4之第2改變 例的印刷電路板。實施例4之第2改變例的印刷電路板6工2 大致與上述實施例4相同。但是,該實施例4之第2改變例 的印刷電路板614,在核心基板630形成之凹部736上收容| 一個晶片電容器6 2 〇。因為在核心基板6 3 0内配置晶片電容| 器620 ’因此可縮短iC晶片69〇與晶片電容器62〇之距離, 而可減低迴路感抗。 (實施例4的第3改變例) 繼續,參照第丨4圖說明有關實施例4之第3改變例的印 刷電路板的構成。,,,,, '| A printed circuit board according to a second modification of the fourth embodiment of the present invention will be described with reference to Fig. 53. The printed circuit board 6 of the second modification of the fourth embodiment is substantially the same as that of the fourth embodiment. However, the printed circuit board 614 according to the second modification of the fourth embodiment is housed in a recessed portion 736 formed in the core substrate 630 | one chip capacitor 6 2 0. Because the chip capacitor 620 ′ is arranged in the core substrate 630, the distance between the iC chip 69 and the chip capacitor 62 can be shortened, and the loop inductance can be reduced. (Third modified example of the fourth embodiment) The configuration of a printed circuit board according to the third modified example of the fourth embodiment will be described with reference to Figs.

499823 I五、發明說明(98) | 該第3改變例的印刷電路板之構成,是大致與實施例1 |相同。但是收容至核心基板30的晶片電容器20不一樣。第| I 14圖係顯示晶片電容器的平面圖。第14 u)圖係顯示多 | 數個取用之裁斷前的晶片電容器,圖中一點鏈狀線係顯示 裁斷線。上述之實施例1之印刷電路板是如第丨4圖(B )之 |平面圖所示之狀態而在晶片電容器的侧緣配設第1電極2 i I及第2電極22。第14 (C)圖係顯示第2改變例之多數個取 | I用的晶片電容器,圖中一點鏈狀線係顯示裁斷線。第2改I |變例的印刷電路板是如第14圖(D)之平面圖所示之狀態 叫在晶片電容器的側緣配設第1電極2丨及第2電極2 2。 該第3改變例的印刷電路板是使用在外緣之内側形成 \電極的曰曰片電各器因此可使用容量大的晶片電容器。 j 繼續’將參照第1 5圖說明第3改變例之第1別例的印刷 i電路板。 j 弟15圖係顯不第1別例之印刷電路板的核心基板上所 |收谷之晶片電容器2 〇的平面圖。上述之實施例i是在核心 基板上收容複數個小容量的晶片電容器,但是第丨別例是 |在核心基板上收容大容量的大型的晶片電容器2 〇。在此, I晶片★電谷斋20是由第1電極21與第2電極22,與誘電體23, I接=至>第1,極21之第1導電膜24,與接續至第2電極22側 i之第2蜍包娱2;3,與沒有接續至第}導電膜24及第2導電膜 25的曰曰片電谷态的上下面之接續用之電極27所組成。經由 該電極2 7而接續IC晶片侧與子板。 4第1次虻例之印刷電路板因為是使用大型的晶片電499823 I V. Description of the Invention (98) | The structure of the printed circuit board of the third modification is substantially the same as that of the first embodiment. However, the chip capacitors 20 accommodated in the core substrate 30 are different. Fig. I 14 shows a plan view of a chip capacitor. Fig. 14 u) The figure shows multiple | several chip capacitors taken before cutting, and a chain line in the figure shows the cutting line. In the printed circuit board of the first embodiment described above, the first electrode 2 i I and the second electrode 22 are arranged on the side edges of the chip capacitor as shown in the plan view of FIG. 4 (B). Fig. 14 (C) shows a plurality of chip capacitors for fetching | I in the second modification, and a dot chain line in the figure shows a cutting line. The printed circuit board of the second modification I | the modified example is in a state shown in a plan view of FIG. 14 (D), and the first electrode 2 and the second electrode 22 are arranged on the side edges of the chip capacitor. The printed circuit board of the third modification uses a chip capacitor in which an electrode is formed on the inner side of the outer edge. Therefore, a large-capacity chip capacitor can be used. jcontinued 'A printed circuit board of the first modification of the third modification will be described with reference to FIG. 15. Figure 15 is a plan view showing the chip capacitor 20 of the valley chip on the core substrate of the printed circuit board of the first alternative. In the above-mentioned embodiment i, a plurality of small-capacity chip capacitors are housed on a core substrate, but the other example is that a large-capacity large-scale chip capacitors 20 are housed on a core substrate. Here, the I chip ★ Electric Valley Fastener 20 is connected to the first electrode 21 and the second electrode 22, and the electric induction body 23, I = to > the first, first conductive film 24 of the electrode 21, and to the second electrode The second toad 2 and 3 on the electrode 22 side i is composed of an electrode 27 for connecting the upper and lower surfaces of the sheet-like valley state which are not connected to the second conductive film 24 and the second conductive film 25. The IC chip side and the daughter board are connected via the electrodes 27. 4The first printed circuit board used a large-scale chip because

第102頁 499823 發明說明(99) 容器2 0,可使用容 型的晶片電容器2 0 不會發生彎曲。 1大的晶片電容器。此外,因為使用大 ’即使重複加熱循環,在印刷電路板亦 ^參照第16圖而說明第2別例之印刷電路板。第16 (A ) 圖係顯不多數偏取用之晶片電容器,圖中一點鏈狀線係顯 不一般的裁斷線’第1 6 ( B )圖係顯示晶片電容器的平面 圖。如第16 (β )圖所示,該第2別例是以連結複數個(圖 中之fc例為3枚)多數個取用之晶片電容器而以大型使 用〇 —田該第2別例’因為是使用大型的晶片電容器,可使用 谷f大的晶片電容器。此外,因為使用大型的晶片電容器 2 0 ’即使重複加熱循環,在印刷電路板亦不會發生彎曲。 上述之貫施例,是將晶片電容器内藏於印刷電路板P.102 499823 Description of the invention (99) Container 2 0 can be used. Capacitor chip capacitor 2 0 will not bend. 1 large chip capacitor. In addition, since a large circuit is used, the printed circuit board of the second example will be described with reference to FIG. 16 even if the heating cycle is repeated. Figure 16 (A) shows a chip capacitor for most biases, and a chain line at one point shows an unusual cutting line. Figure 16 (B) shows a plan view of the chip capacitor. As shown in FIG. 16 (β), the second example is a large-scale use of a plurality of chip capacitors (three fc examples in the figure) are connected and used in a large scale. Since a large chip capacitor is used, a large chip capacitor can be used. In addition, since a large chip capacitor 20 is used, even if the heating cycle is repeated, the printed circuit board does not bend. In the above-mentioned embodiment, the chip capacitor is embedded in the printed circuit board.

i内’但疋亦可使用在陶瓷板設置導電體膜之板狀的電容器 I以取代晶片電容器。 j ^ 〃此外’工达之實施例4,僅具備在核心基板收容之晶 I f電容器5但是與實施例1的第1別例同樣地,可在表面及 j裏面安裝大容量的晶片電容器。 β 參照第1 2圖而上述,核心基板内,也就是丨c晶片附近 |具備晶片電容器20,或在表面及裏面具備大容量(以及相 j對大感抗)之晶片電容器,可將電壓變動壓至最小。 j 在此’測定在實施例4之印刷電路板中,埋入於核心 基板内的晶片電容器6 2 0的感抗,與安裝於印刷電路板之 裏面(子板側的面)的晶片電容器的感抗,如下所示。In the "i", instead of a chip capacitor, a plate-shaped capacitor I in which a conductive film is provided on a ceramic plate may be used. j ^ 〃 In addition, the fourth embodiment of Gongda only includes a crystal capacitor f5 accommodated in a core substrate. However, similar to the first example of the first embodiment, a large-capacity chip capacitor can be mounted on the surface and inside j. β As mentioned above with reference to Figures 12 and 12, the core substrate, that is, the vicinity of the c chip, is provided with a chip capacitor 20, or a chip capacitor with a large capacity (and a large inductive reactance) on the surface and inside, which can change the voltage Press to the minimum. j Here, the inductive reactance of the chip capacitor 6 2 0 embedded in the core substrate in the printed circuit board of Example 4 and the chip capacitor mounted on the inside of the printed circuit board (side of the daughter board side) were measured. Inductive reactance is shown below.

2160-3403-Pi-ptd 第103頁 499823 !五、發明說明(loo) 12160-3403-Pi-ptd Page 103 499823! 5. Description of the Invention (loo) 1

^ I^ I

I電容器單體的場合 j埋入形137 pH |裏面安裝形287 pH | !In the case of I capacitor unit j buried shape 137 pH | inside mounted shape 287 pH |!

II

,8個電容器並列接續的場合 IWhere 8 capacitors are connected in parallel I

!埋入形60 dH I - "! Buried 60 dH I-"

裏面安裝形72 pH 如上所示,使用單體電容器,或並列接續以增大容量 的場合,以内藏晶片電容器皆可減低感抗。The internal mounting type 72 pH is shown above. When a single capacitor is used or connected in parallel to increase the capacity, the built-in chip capacitor can reduce the inductive reactance.

I 接著,說明有關進行信賴性試驗的結果。在此,測定I |在實施例4之印刷電路板,1個晶片電容器的靜電容量的變 I® i i |化率。 靜電容量變化率 (測定頻率數100Hz)(測定頻率數1 Hz) 蒸氣 168小時 0·3% 〇β 4 % ! HAST 100 小時 -0. 9 % -0.9% 1 Ί ! TS 1 0 00 循環 1.1% 1.3% 1 蒸氣試驗是以蒸氣保存在濕度100%。又,HAST試驗 是放置在相對濕度100 %、施加電壓1. 3V、溫度121 °C 100 小時。TS試驗是反複放置在-125 °C 30分鐘,55艺30分鐘 _ 1 0 0 0次之試驗。I Next, the results of the reliability test will be described. Here, the change in the capacitance of the chip capacitor in the printed circuit board of Example 4 was measured. Capacitance change rate (measurement frequency 100Hz) (measurement frequency 1 Hz) Steam 168 hours 0.3% 〇 β 4%! HAST 100 hours-0.9% -0.9% 1 Ί! TS 1 0 00 Cycle 1.1% 1.3% 1 Vapor test is to store steam at 100% humidity. In the HAST test, the relative humidity was 100%, the applied voltage was 1.3 V, and the temperature was 121 ° C for 100 hours. The TS test is repeated at -125 ° C for 30 minutes and 55 cycles for 30 minutes _ 100 0 times.

! 在上述信賴性試驗,發現即使内藏晶片電容器之印刷 I! In the above-mentioned reliability test, it was found that

ί電路板,亦可達成輿既有之電容器表面安裝形同等的信賴 I | i性。又,如上述,TS試驗可看出因為陶竟組成之電容器與 ίί The circuit board can also achieve the same reliability as the existing surface-mounted capacitors. I | i. Also, as mentioned above, the TS test shows that

2ί6ΰ-3403-?ί·μίά 第104頁 499823 ι...................................................................... .....j I五、發明說明(ιοί) j2ί6ΰ-3403-? Ί · μίά Page 104 499823 ι .............................. .............. j. V. Description of the invention (ιοί) j

j街脂組成之核心基板及層間樹脂絕緣層的熱膨脹率的不 IThe thermal expansion coefficient of the core substrate and interlayer resin insulation layer composed of j street grease

j同,即使發生内部應力,也不會在晶片電容器電極與介層 I窗口之間發生斷線,在晶片電容器與層間樹脂絕緣層之間 ί發生剝離,在層間樹脂絕緣層發生斷裂,可達到長期間的 i高信賴性。 I I 實施例4的構成,由於在導體電路與電容器之間,形 i |成實施例4之介層窗口,因此不會因電源供給不足而動作 丨 i遲緩,可保持所期望的性能,即使進行信賴性試驗亦不會 j發生問題。 I 此外,藉由該介層窗口,即使形成層間樹脂絕緣層的Similarly, even if internal stress occurs, no disconnection will occur between the chip capacitor electrode and the interlayer I window, peeling will occur between the chip capacitor and the interlayer resin insulation layer, and the interlayer resin insulation layer will break, which can Long-term reliability. II The structure of the fourth embodiment is formed between the conductor circuit and the capacitor, forming the interlayer window of the fourth embodiment, so it will not operate due to insufficient power supply. I is slow, and the desired performance can be maintained, even The reliability test will not cause problems. I In addition, with this interlayer window, even if an interlayer resin insulation layer is formed,

^ I I介層窗口,引起位置變動,因為其容許範圍增加,仍可確j i保電性接續性。 j^ I I interlayer window, causing a change in position, because its allowable range increases, can still confirm the electrical continuity. j

2L3403-P['i)td 第105頁2L3403-P ('i) td Page 105

Claims (1)

499823 i六、申請專利範圍 | ι· 一種印刷電路板,在收容電容器之核心基板上,交 I亙積層層間樹脂絕緣層與導體電路,其中前述收容電容器 之核心基板是經由接著板將第1樹脂基板、與具有收容電 谷器之開口的弟2樹脂基板與第3樹脂基板而積層。 2·如申請專利範圍第丨項所述之印刷電路板,其中前 |述接著板是將心材含浸於熱硬化性樹脂中。 j 如申請專利範圍第1項所述之印刷電路板,其中前 |述第第2、第3樹脂基板是將心材含浸於樹脂中。 4 ·如申請專利範圍第1項所述之印刷電路板,其中前 述電容器有複數個。 < 5 ·如申請專利範圍第1項所述之印刷電路板,其中前 述第2樹脂基板上形成有導體電路。 ^ 6·如申請專利範圍第1項所述之印刷電路板,其中在 | i μ述印刷電路板的表面安裝電容器。 9·如申請專利範圍第1項所述之印刷電路板,其中肯 述電容器的電極上开$r A ' . 々上心成有金屬膜。 1 0 ·如申請專利範圍第9項所述之印刷電路板,其中 成於前述電容器的電極上之金屬膜是以銅為主的電鍍膜499823 i Sixth, the scope of patent application | ι · A printed circuit board on the core substrate that houses the capacitor, interspersed with an interlayer resin insulation layer and a conductor circuit, wherein the core substrate that houses the capacitor is a first resin through a bonding board The substrate is laminated with a second resin substrate and a third resin substrate having an opening for accommodating an electric valley device. 2. The printed circuit board according to item 丨 in the scope of application for a patent, in which the core sheet is impregnated with a thermosetting resin. j The printed circuit board according to item 1 of the scope of patent application, wherein the second and third resin substrates mentioned above are impregnated with a core material in the resin. 4 · The printed circuit board according to item 1 of the scope of patent application, wherein the aforementioned capacitors are plural. < 5 The printed circuit board according to item 1 of the scope of patent application, wherein a conductor circuit is formed on the aforementioned second resin substrate. ^ 6. The printed circuit board according to item 1 of the scope of patent application, wherein a capacitor is mounted on the surface of the printed circuit board. 9. The printed circuit board according to item 1 of the scope of patent application, wherein the electrodes of the capacitor are opened with a metal film. 10 · The printed circuit board according to item 9 of the scope of patent application, wherein the metal film formed on the electrodes of the capacitor is a copper-based electroplated film 2160-3403-Ρί-ptd 第106頁 4998232160-3403-Ρί-ptd Page 106 499823 ,11如申請專利範圍第1項所述之 前述電容器的電極之披覆層露出至少 彼覆層電性接續於露虫之電極c 印刷電路板,其中使 一部份,而得從前述 /如申請專利範圍第"員所述之印刷電路板, 用在夕緣之内側形成電極之晶片電容器做為前述電容器 13.如申請專利範圍第丨項所述之印刷電路板,其中 用以矩陣狀形成電極之晶片電容器做為前述電容器。’ 1 4 ·如申請專利範圍第丨項所述之印刷電路板,其中 用夕數個取用之晶片電容器複數個連結而做為前述 ΫΒ. , 态 〇 1 5·如申請專利範圍第1項所述之印刷電路板,其中前 述弟1樹脂基板與前述電容器是以絕緣性接著劑接合,而 絕緣性接著劑比前述第1樹脂基板的熱膨脹率小。 16· —種印刷電路板之製造方法,包括至少以下 (a)〜(d)之步踢: (a) 在第1樹脂基板上形成導體襯墊; (b) 在前述第1樹脂基板的導體襯墊上經由導電性接著 劑而接續電容器; (c )將第3樹脂基板與具有收容前述電容器之開口的第 | 2樹脂基板與前述第1樹脂基板,將前述第1樹脂基板的前 I述電容器收容於前述第2樹脂基板的前述開口中’且將第3 I樹脂基板上塞入前述第2樹脂基板的前述開口之狀態,經 由接著板而積層;以灰 (d )將前述第1樹脂基板、前述第2樹脂基板與前述第311 As described in item 1 of the scope of the patent application, the coating layer of the electrode of the aforementioned capacitor is exposed to at least the other layer electrically connected to the electrode of the exposed insect c printed circuit board, of which a part is obtained from the foregoing / such as The printed circuit board described in the scope of the patent application, using a chip capacitor formed with an electrode on the inner side of the evening edge as the aforementioned capacitor. 13. The printed circuit board described in the scope of the patent application, described above, wherein A chip capacitor forming an electrode is used as the aforementioned capacitor. '1 4 · The printed circuit board described in item 丨 of the scope of patent application, wherein a plurality of chip capacitors taken from the evening are used as the aforementioned ΫΒ. In the printed circuit board, the first resin substrate and the capacitor are bonded with an insulating adhesive, and the insulating adhesive has a smaller thermal expansion coefficient than the first resin substrate. 16. · A method for manufacturing a printed circuit board, including at least the following steps (a) to (d): (a) forming a conductor pad on a first resin substrate; (b) a conductor on the first resin substrate The capacitor is connected to the pad via a conductive adhesive; (c) a third resin substrate and a second resin substrate having an opening for accommodating the capacitor, and the first resin substrate; and the first resin substrate described above The capacitor is housed in the opening of the second resin substrate, and the third I resin substrate is inserted into the opening of the second resin substrate, and the laminate is laminated through the bonding plate; the first resin is ash (d). Substrate, the second resin substrate, and the third 2160-3403-Pf-ptd 第107頁 4998232160-3403-Pf-ptd p. 107 499823 樹脂基板加熱加壓而形成核心基板。 1 ?· 一種印刷電路板,在核心基板上積層有樹脂絕緣 層與導體電路‘;其中前述核心基板貼合形成導體電路之複 i數個樹脂基板,在前述核心基板内收容有電容器。 j 18. —種印刷電路板5在核心基板上積層有樹腊絕緣 層與導體電路,其中前述核心基板貼合形成導體電路之複 數個樹脂基板,在前述核心基板内形成之凹部中收容有電 容器。 I 19·如申請專利範圍第17或18項所述之印刷電路板5 |其中前述複數個樹脂基板是經由接著板而貼合。 | ! 1 、20·如申請專利範圍第19項所述之印刷電路板5其中 别述接著板是將心材含浸於熱硬化性樹脂中。 2 1 ·如申請專利範圍第1 7或1 8項所述之印刷電路板, /、中如述树脂基板是將心材含浸於樹脂中。 I 22 ·如申請專利範圍第17或18項所述之印刷電路板, |其中,述電容器是複數個。 1 23*如申請專利範圍第17或18項所述之印刷電路板, |其中在前述印刷電路板的表面安裝電容器。 1、24·如申請專利範圍第23項所述之印刷電路板,其中 則述表面的晶片電容器之靜電容量是在内層的晶片電容器 之靜電容量以上。 I复由2申請專利範圍第23項所述之印刷電路板,其中 | f則述表面的晶片電容哭之咸坑是在内層的晶片電容器 丨之感抗以上。 -< a-The resin substrate is heated and pressurized to form a core substrate. 1 ·· A printed circuit board having a resin insulation layer and a conductor circuit laminated on a core substrate; wherein the core substrate is bonded to form a plurality of resin substrates of the conductor circuit, and a capacitor is housed in the core substrate. j 18. A printed circuit board 5 has a wax insulation layer and a conductor circuit laminated on a core substrate, wherein the core substrate is bonded to form a plurality of resin substrates of the conductor circuit, and a capacitor is accommodated in a recess formed in the core substrate. . I 19. The printed circuit board 5 according to item 17 or 18 of the scope of the patent application, wherein the plurality of resin substrates are bonded via a bonding board. | 1, 20 · The printed circuit board 5 described in item 19 of the scope of patent application, in which the core board is impregnated with a thermosetting resin. 2 1 · The printed circuit board as described in item 17 or 18 of the scope of patent application, where the resin substrate is impregnated with a core material in the resin. I 22 · The printed circuit board according to item 17 or 18 of the scope of patent application, wherein the capacitor is plural. 1 23 * The printed circuit board according to item 17 or 18 of the scope of patent application, wherein a capacitor is mounted on the surface of the aforementioned printed circuit board. 1. 24. The printed circuit board according to item 23 of the scope of the patent application, wherein the capacitance of the chip capacitor on the surface is greater than the capacitance of the chip capacitor on the inner layer. I. The printed circuit board described in item 23 of the scope of patent application, where f is the chip capacitor on the surface and the chip capacitor on the inner layer is above the inductive reactance. -< a- 第108頁 499823 六、申請專利範圍 26‘如申請專利範圍第17或18頊所述之印刷電路板, 其中在前述電容器之電極上形成金屬麟’以電鍍而電性接 續至形成前述金屬膜之電極。 2 7 ·如申請專利範圍第2 6項所述之印刷、電路板,其中 形成於前述電容器之電極的金屬膜是以銅為主之電鍍膜。 | 28·如申請專利範圍第17或18項所述之印刷電路板,Page 108 499823 6. Application scope 26 'The printed circuit board as described in the scope of application patent scope 17 or 18', wherein a metal lin is formed on the electrode of the aforementioned capacitor to be electroplated and electrically connected to the aforementioned metal film. electrode. 27. The printed circuit board according to item 26 of the scope of the patent application, wherein the metal film formed on the electrode of the capacitor is a copper-based electroplated film. 28. The printed circuit board as described in the 17th or 18th in the scope of patent application, j其中使前述電容器的電極之披覆層露出至少一部份,而得 從前述披覆層電性接續於露出之電極。 2 9 ·如申請專利範圍第1 7或1 8項所述之印刷電路板, 其中使用在外緣之内侧形成電極之晶片電容器做為前述電 容器。 | | 30·如申請專利範圍第17或18項所述之印刷電路板, |其中使用以矩陣狀形成電極之晶片電容器做為前述電容 31 ·如申請專利範圍第1 7或1 8項所述之印刷電路板, 其中使用多數個取用之晶片電容器複數個連結而做為前述 I電容器。 I | 32·如申請專利範圍第17或18項所述之印刷電路板, I j其中前述第1樹脂基板與前述電容器是以絕緣性接著劑接 合’而絕緣性接著劑比前述第丨樹脂基板的熱膨脹率小。 3 3 · —種印刷電路板之製造方法,包括至少以下 (a )〜(e )之步驟: 1 j (a)在複數個樹脂基板上形成導體電路; i (b)經由接著板而積層複數個前述樹腊基板;In which, at least a part of the coating layer of the electrode of the capacitor is exposed, and the exposed electrode can be electrically connected from the coating layer. 2 9 · The printed circuit board according to item 17 or 18 of the scope of patent application, wherein a chip capacitor having electrodes formed on the inner side of the outer edge is used as the foregoing capacitor. | 30. The printed circuit board as described in item 17 or 18 of the scope of patent application, wherein a chip capacitor with electrodes formed in a matrix is used as the aforementioned capacitor 31. · As described in item 17 or 18 of the scope of patent application The printed circuit board uses a plurality of connected chip capacitors as the aforementioned I capacitors. I | 32 · The printed circuit board according to item 17 or 18 of the scope of application for patent, I j wherein the first resin substrate and the capacitor are bonded with an insulating adhesive, and the insulating adhesive is lower than the first resin substrate The thermal expansion rate is small. 3 3 · — A method for manufacturing a printed circuit board, including at least the following steps (a) to (e): 1 j (a) forming a conductor circuit on a plurality of resin substrates; i (b) laminating a plurality of layers through a bonding board Each of the aforementioned wax substrates; 2i60-3403-Pi-ptd 第109頁 499823 I六、申請專利範圍 ' | (c)將前述樹脂基板同士經由前述接著板而接著成核 |心基板; 、 乂 ! (d)在前述核心基板上形成凹部;以及 I (e)將電容器收容於前述凹部。 34· —種印刷電路板之製造方法,至少包括下列 (a)〜(e)之步驟: (a)形成具備通孔,在表面配設導體電路之樹脂基 i板, 、 1 (b)形成不具備通孔,在表面配設導體電路之樹脂其 板; 、公 _ (C )將如述具備通孔之樹脂基板與前述不具備通孔之 樹脂基板經由接著板而積層; I (d)將前述樹脂基板同士經由前述接著板而接著成核 |心基板;以及 Λ | I (e)將電容器收容於前述通孔。 3 5 · —種印刷電路板,在收容電容器之核心基板上,2i60-3403-Pi-ptd Page 499499823 I Sixth, the scope of patent application '| (c) The aforementioned resin substrate is connected to the nucleation | core substrate through the aforementioned bonding plate; 乂! (D) on the aforementioned core substrate Forming a recess; and (e) accommodating the capacitor in the recess. 34 · —A method for manufacturing a printed circuit board, including at least the following steps (a) to (e): (a) forming a resin-based i-board having a through hole and a conductor circuit arranged on the surface; (C) A resin substrate with a through-hole and a resin substrate without a through-hole as described above are laminated via a bonding board without a through-hole; I (d) The resin substrate is connected to the nucleus | core substrate through the bonding plate; and Λ | I (e) stores the capacitor in the through hole. 3 5 · — a printed circuit board on the core substrate that houses the capacitor, 交互積層層間樹脂絕緣層與導體電路,其中前述收容電容 器之核心基板是經由接著板將第i樹脂基板、與具有收容 j電各裔之開口的第2樹脂基板與第3樹脂基板而積層者5在 ! Μ述核心基板的兩面,配設有與前述電容器之端子接續之 I介層窗口。 、、 ^ 36·如申請專利範圍第35項所述之印刷電路板,其中 刖述接著板是將心材含浸於熱硬化性樹脂中。 37·如申請專利範圍第35或36項所述之印刷電路板,The interlayer resin insulation layer and the conductor circuit are alternately laminated, wherein the core substrate for accommodating the capacitor is formed by laminating the i-th resin substrate, and the second resin substrate and the third resin substrate with openings for accommodating the electric power through a bonding board 5 On both sides of the core substrate, an I interlayer window is provided, which is connected to the terminals of the capacitor. 36. The printed circuit board according to item 35 of the scope of the patent application, wherein the core board is impregnated with a thermosetting resin. 37. The printed circuit board according to item 35 or 36 of the scope of patent application, 499823499823 六、申請專利範圍 其中前述第1、第2、第3樹脂基板是將心材含浸於樹脂 中。 ! 38·如申請專利範圍第35項所述之印刷電路板,其中 |前述電容器是複數個。 31如申請專利範圍第3 5項所述之印刷電路板5其中 $述第2樹脂基板上形成導體電路。 4〇·如申請專利範圍第35項所述之印刷電路板,其中 !在前述印刷電路板的表面安裝電容器。 |义 41·如申請專利範圍第4〇項所述之印刷電路板,其中 !♦ j %述表面的晶片電容器之靜電容量是在内層的晶片電容器 丨之靜電容量以上。 4 “ ·如申睛專利範圍第4 0項所述之印刷電路板,其_ 述表面的晶片電容器之感抗是在内層的晶片電容 之感抗以上。 ▲ 4^·如申請專利範圍第5項所述之印刷電路板, +义、^如〜電極上形成金屬膜,以電鍍而電性接續至 成則返金屬膜之電極。 、 形# 如申請專利範圍第43項所述之印刷電路板,豆1 形成於前述雷交哭夕.1 傲八 ,r W之電極的金屬膜是以銅為主之電鑛膜6. Scope of patent application Wherein the aforementioned first, second and third resin substrates are impregnated with resin in the core material. 38. The printed circuit board according to item 35 of the scope of patent application, wherein the aforementioned capacitor is plural. 31. The printed circuit board 5 according to item 35 of the scope of patent application, wherein a conductor circuit is formed on the second resin substrate. 40. The printed circuit board according to item 35 of the scope of patent application, wherein a capacitor is mounted on the surface of the aforementioned printed circuit board. Yi Yi 41. The printed circuit board as described in item 40 of the scope of patent application, wherein the capacitance of the chip capacitor on the surface is greater than the capacitance of the chip capacitor on the inner layer. 4 "· As for the printed circuit board described in item 40 of the patent scope, the inductive reactance of the chip capacitor on the surface is above the inductive reactance of the chip capacitor on the inner layer. ▲ 4 ^ As in the fifth of the scope of patent application In the printed circuit board described in the above item, a metal film is formed on the electrode, and the electrode is returned to the metal film by electroplating and electrically connected to the electrode. 、 形 # The printed circuit as described in item 43 of the scope of patent application Plate, bean 1 formed in the aforementioned thunderstorm. 1 Aoba, the metal film of the r W electrode is a copper-based electric ore film 使前述V容申二專二範圍第35項所述之印刷電路板,其 述披覆層電以=覆層露出至少一部份,而得從 电庇镬續於露出之電極。 用在外絡如申請專利範圍第35所述之印刷電路板,其中, '、之内側形成電極之晶片電容器做為前述電容器The printed circuit board described in item 35 of the above-mentioned V Rongshen Second Specialized Scope, wherein the coating layer is electrically exposed to at least a part of the coating layer, so that the exposed electrode can be continued from the electric shield. The printed circuit board described in the 35th aspect of the patent application, wherein a chip capacitor with electrodes formed on the inner side of the substrate is used as the aforementioned capacitor. 六、申請專'一""" " ----------~ --- 使用、;·如曱請專利範圍第3 5項所述之印刷電路板,其中 Μ矩陣狀形成電極之晶片電容器做為前述電容器、。 使用如申請專利範圍第35項所述之印刷電路板,其中 器:夕數個取用之晶片電容器複數個連結而做為前述電容 i 如申請專利範圍第35項所述之印刷電路板,其中 二=i樹脂基板與前述電容器是以絕緣性接著劑接合, 、、巴%性接著劑比前述第1樹脂基板的熱膨脹率小。 5 〇 · —種印刷電路板之製造方法,至少包括以下 (a)〜(d)之步驟: I (a)在第1樹脂基板上經由接著材料而裝上電容器; I (b)將第3樹脂基板與具有收容前述電容器之開;;的第 I 2樹脂基板與前述第丨樹脂基板,將前述第i樹脂基板的前 返電谷為收谷於前述第2樹脂基板的前述開口中,並且將 弟3樹脂基板上基入前述第2樹脂基板的前述開口之狀鮮/, 經由接著板而積層; ! (c)以雷射照射’而在前述核心基板上形成放置前述 !電容器之介層窗口用開口;以及 I (d)在前述介層窗口用開口上形成介層窗口。 51 · —種印刷電路板之製造方法,至少包括以下 (a)〜(f )之步驟: | (a)在第1樹脂基板的一面之金屬膜上形成介層窗口形 i成用開口; j (b)在前述第1樹脂基板的金屬膜非形成面上經由接著Six, apply for a special "quotation" " " " " ---------- ~ --- use ,; if you ask for the printed circuit board described in item 35 of the patent scope, where M The chip capacitors in which the electrodes are formed in a matrix are used as the capacitors. Use the printed circuit board described in item 35 of the scope of patent application, in which: a plurality of chip capacitors taken out are connected as the aforementioned capacitor. I The printed circuit board described in item 35 of scope of patent application, where Two = i resin substrate and the capacitor are bonded with an insulating adhesive, and the thermal expansion coefficient of the first resin substrate is smaller than that of the first resin substrate. 5 〇—A method for manufacturing a printed circuit board includes at least the following steps (a) to (d): I (a) mounting a capacitor on a first resin substrate through an adhesive material; I (b) placing a third A resin substrate and an opening for accommodating the capacitor; an I 2nd resin substrate and a first resin substrate; and a front return valley of the i-th resin substrate is received in the opening of the second resin substrate, and Put the 3rd resin substrate into the opening of the 2nd resin substrate, and laminate it via the bonding plate; (c) forming a dielectric layer on the core substrate with the laser irradiation 'on the core substrate An opening for a window; and I (d) forming an interlayer window on the aforementioned opening for an interlayer window. 51. A method for manufacturing a printed circuit board, including at least the following steps (a) to (f): | (a) forming an opening for forming an interlayer window on a metal film on one side of the first resin substrate; i; (b) bonding on the non-formed surface of the metal film of the first resin substrate 499823 I六、申請專利範圍 |材料而裝上電容器 I (C)將第3樹脂基板與具有收容前述電容器之開口的第\ 2樹脂基板與前述第1樹脂基板,將前述第i樹脂基板的前ίν 述電容器收容於前述第2樹脂基板的前述開口中,且將第3 樹脂基板上塞入前述第2樹脂基板的前述開口之狀態,終 由接著板而積層; ^ I (d)將前述第1樹脂基板、前述第2樹脂基板及前述第3 I i樹脂基板加熱加壓而形成核心基板; j ( e )以雷射照射,而在前述核心基板上形成放置前述 電容器之介層窗口用開口;以及 (f)在前述介層窗口用開口形成介層窗口。 5 2 · —種印刷電路板之製造方法,至少包括以下 | (a)〜(f)之步驟: I \ (a)在一面貼有金屬膜之第ί樹脂基板以及第3樹脂基 I 板的金屬膜上形成介層窗口形成用開口; (b)在前述第1樹脂基板的金屬膜非形成面上經由接著 材料而裝上電容器; j (c )將第3樹脂基板與具有收容前述電容器之開口的第 I 2樹脂基板與前述第1樹脂基板,將前述第1樹脂基板的前 |述電容器收容於前述第2樹脂基板的前述開口中,且將第3 ! 樹脂基板上塞入前述第2樹脂基板的前述開口之狀態,經 由接著板而積層; (d)將前述第1樹脂基板、前述第2樹脂基板及前述第3 I樹脂基板加熱加壓而形成核心基板;499823 I Sixth, apply for patent scope | Material and install capacitor I (C) Put the third resin substrate and the second resin substrate and the first resin substrate with an opening to accommodate the capacitor, and place the front of the i-th resin substrate ίν The capacitor is housed in the opening of the second resin substrate, and a state in which the third resin substrate is plugged into the opening of the second resin substrate is finally laminated on the board; ^ I (d) 1 resin substrate, the second resin substrate, and the third I i resin substrate are heated and pressurized to form a core substrate; j (e) is irradiated with laser light, and an opening for a dielectric window for placing the capacitor is formed on the core substrate. And (f) forming an interposer window in the aforementioned interposer window opening. 5 2 · — A method for manufacturing a printed circuit board, including at least the following steps: (a) to (f): I \ (a) The first resin substrate and the third resin-based I board with a metal film on one side An opening for forming an interposer window is formed on the metal film; (b) a capacitor is mounted on the non-forming surface of the metal film of the first resin substrate through a bonding material; j (c) a third resin substrate The opened I 2 resin substrate and the first resin substrate house the capacitor of the first resin substrate in the opening of the second resin substrate, and the third resin substrate is inserted into the second resin substrate. The state of the opening of the resin substrate is laminated via a bonding plate; (d) heating and pressing the first resin substrate, the second resin substrate, and the third I resin substrate to form a core substrate; 2160-3403-?!-ptd 第113頁 4^23 申請專利範圍 | e以⑽射知射形成於前述第1樹脂基板及前述第3樹 I脂基板上之前述介層窗口形成用開口,而形成放置前述電 |容器之介層窗口用開口;以及 i (1)在前述介層窗口用開口形成介層窗口。 | 53· 一種印刷電路板之製造方法,至少包括以下 (a )〜(g )之步驟·· I (a)在一面貼有金屬膜之第1樹脂基板以及第3樹脂基 丨板的金屬膜上形成通孔; | (b)在前述第1樹脂基板的金屬膜非形成面上經由接著2160-3403-?!-Ptd Page 113 4 ^ 23 Patent application scope | eThe above-mentioned opening for the formation of the interposer window is formed on the aforementioned first resin substrate and the aforementioned third resin substrate by radiation, and Forming an opening for an interposer window in which the aforementioned electric container is placed; and i (1) forming an interposer window in the aforementioned interposer window opening. 53 · A method for manufacturing a printed circuit board, including at least the following steps (a) to (g) ... I (a) The first resin substrate and the third resin-based metal film with a metal film on one side A through-hole is formed thereon; (b) is bonded to the non-formed surface of the metal film of the first resin substrate I材料而裝上電容器; (c)將第3樹脂基板與具有收容前述電容器之開口的第 2樹脂基板與前述第1樹脂基板,將前述第1樹脂基板的前 !述電谷器收容於前述第2樹脂基板的前述開口中,且將第3 I樹脂基板上塞入前述第2樹脂基板的前述開口之狀態5經 S由接著板而積層; I I (d)將前述第1樹脂基板、前述第2樹脂基板及前述第3 樹脂基板加熱加壓而形成核心基板; 卜 (e )以雷射照射形成於前述第1樹脂基板及前述第3樹 脂基板上之前述通孔,而在前述核心基板的兩面上形成放 置前述電容器之介層窗口用開口; (f) 除去前述金屬膜或;使其變薄以及 (g) 在前述核心基板上形成導體電路及介層窗口。 5 4 · —種印刷電路板,在核心基板上積層樹脂絕緣曾 與導體電路,其中前述核心基板上内藏電容器,形成與前The capacitor is made of I material; (c) The third resin substrate and the second resin substrate and the first resin substrate having an opening for accommodating the capacitor are housed in the aforementioned electric valley device. In the state of the second resin substrate, the third I resin substrate is plugged into the opening of the second resin substrate. The state 5 is laminated through the bonding board; II (d) the first resin substrate, the The second resin substrate and the third resin substrate are heated and pressurized to form a core substrate. (E) The through holes formed in the first resin substrate and the third resin substrate are irradiated with laser light, and the core substrate is formed in the core substrate. (F) removing the metal film or thinning it; and (g) forming a conductor circuit and a via window on the core substrate. 5 4 · — A printed circuit board with resin insulation and a conductor circuit laminated on a core substrate, wherein a capacitor is built in the core substrate and 2160-3403-Pi-ptd 第114頁2160-3403-Pi-ptd p. 114 2 :谷"相接之相對大的下層介層窗口,在前述核心基板 、面之層間樹脂絕緣層上,配設與1個前述下層介層窗 口相連之複數個相對小之上層介層窗口。 1、、5 5 ·如申請專利範圍第5 4項所述之印刷電路板,其中 =述下層介層窗口是以電鍍填充之表面平坦的填充之介層 &、、56·如申請專利範圍第54項所述之印刷電路板,其中 月、J述下層介層窗口是以樹脂填充内部而在表面形成金屬膜 之填充之介層窗口。 ^ 57·如申請專利範圍第54項所述之印刷電路板,其中 t述電容1是-個收容在形成於前述核^基板之凹部之 · 中。 ^ 58·如申請專利範圍第54項所述之印刷電路板,其中 月'J述電容器是複數個收容在形成於前述核心基板之凹部之 中。 59·如申請專利範圍第54項所述之印刷電路板,其中 於則述電容器之電極形成金屬膜,藉由電鍍而接續至形成 前述金屬膜之電極而得。 60·如申請專利範圍第59項所述之印刷電路板,其中 形成於前述晶片電容器的電極的金屬膜是以銅為主之電鍍 _ 膜0 61·如申請專利範圍第54至58項中任一項所述之印刷 電路板,其中使前述電容器的電極之披覆層露出至少一部 份,而得從前述披覆層電性接續於露出之電極。2: The valley " relatively large lower interlayer window, on the core substrate and the interlayer resin insulation layer on the surface, a plurality of relatively small upper interlayer windows connected to the aforementioned lower interlayer window are arranged . 1, 5, 5 · The printed circuit board as described in item 54 of the scope of patent application, wherein the lower interlayer window is a filled interlayer with a flat surface filled with electroplating & The printed circuit board according to item 54, wherein the lower interlayer window described in month and month J is a filled interlayer window filled with resin to form a metal film on the surface. ^ 57. The printed circuit board according to item 54 of the scope of patent application, wherein the capacitor 1 is housed in a recess formed in the aforementioned core substrate. ^ 58. The printed circuit board according to item 54 of the scope of patent application, wherein the capacitors described above are housed in a plurality of recesses formed in the aforementioned core substrate. 59. The printed circuit board according to item 54 of the scope of application for a patent, wherein the electrode of the capacitor is formed with a metal film and is connected to the electrode forming the metal film by electroplating. 60. The printed circuit board according to item 59 of the scope of patent application, wherein the metal film formed on the electrode of the aforementioned chip capacitor is a copper-based electroplating _ film 0 61 · As any of the scope of application patents 54 to 58 The printed circuit board according to one item, wherein the coating layer of the electrode of the capacitor is exposed at least in part, and the exposed electrode can be electrically connected from the coating layer. 第115頁 499823Page 115 499823 62·如申請專利範圍第54至58項中任一項所述之印刷 電路板,其中使用在外緣之内侧形成電極之晶片電容器做 為前述電容器。 63·如申請專利範圍第54至58項中任一項所述之印刷 電路板’其中使用以矩陣狀形成電極之晶片電容器做為前 述電容器。 _ 64·如申請專利範圍第54至58項中任一項所述之印刷 電路板’其中使用多數個取用之晶片電容器複數個連結而 做為前述電容器。62. The printed circuit board according to any one of claims 54 to 58 of the scope of patent application, wherein a chip capacitor having electrodes formed on the inner side of the outer edge is used as the aforementioned capacitor. 63. The printed circuit board according to any one of claims 54 to 58 of the scope of patent application, wherein a chip capacitor having electrodes formed in a matrix shape is used as the aforementioned capacitor. 64. The printed circuit board according to any one of claims 54 to 58 in the scope of the patent application, wherein a plurality of connected chip capacitors are used as the aforementioned capacitors. 65·如申請專利範圍第54至58項中任一項所述之印刷 電路板’其中前述核心基板與電容器之間是以比核心基板 之熱膨脹率小的樹脂填充。 6 6 · —種印刷電路板之製造方法,至少包括以下 (a)〜(e)步驟: (a) 在核心基板上内藏電容器; (b) 在前述電容器的上面形成樹脂絕緣層; (c) 在前述樹脂絕緣層上形成與前述電容器之電極相 接之相對大的下層介層窗口;65. The printed circuit board according to any one of claims 54 to 58 in the scope of the patent application, wherein the core substrate and the capacitor are filled with a resin having a smaller thermal expansion coefficient than the core substrate. 6 6 · A method for manufacturing a printed circuit board, including at least the following steps (a) to (e): (a) a capacitor is built in the core substrate; (b) a resin insulating layer is formed on the capacitor; (c) ) Forming a relatively large lower interlayer window on the aforementioned resin insulating layer to be in contact with the electrode of the aforementioned capacitor; (d) 在前述核心基板的上面形成層間樹脂絕緣層;以 及 如(e)在前述層間樹脂絕緣層上配設與1個前述下層介 _ 口相接之相對小的上層介層窗口。 矿f7·如申請專利範圍第66項所述之製造方法,其中4 步驟之前,在前述核心基板上形成凹部,在前i 凹部中你& , 一個前述電容器。(d) forming an interlayer resin insulation layer on the core substrate; and (e) disposing a relatively small upper interlayer window on the interlayer resin insulation layer to be connected to one of the aforementioned lower interfaces. Mine f7. The manufacturing method as described in item 66 of the scope of patent application, wherein before the 4 steps, a recess is formed on the core substrate, and in the front i recess, you & a capacitor. 第116頁 499823 六、申請專利範圍 其中在 在前述 形成凹部 前述ίϋ11㈣㈣第66項所述之製造方法 1步私之前,在前述核心基板上 凹部中收容複數個前述電容器。 今^ 6 9 ·如申請專利範圍第6 6項所述之製造方法,其中在 月】=)步驟之前,在樹脂板上形成通孔,在形成前述通 孔之樹脂板上貼上樹脂板,而形成具有凹部之核心基板。 ,70.如申請專利範圍第66項所述之製造方法,其中在 t成别逃下層介層窗口時,以電鍍填充而形成表面平坦之 填充之介層窗口。 其中在 在表面配 其中在 71 ·如申請專利範圍第6 6項所述之製造方法 形成前述下層介層窗口時,以樹脂填充内部後 5 又金屬膜而形成表面平坦之填充之介層窗口。 7 2 ·如申請專利範圍第β 8項所述之製造方法 前述(a )步驟之後,在前述凹部内的前述複數個電容器上 面,從上施加壓力,而使前述電容器上面的高度一致。 2160-3403-Ff-ptd 第117頁Page 116 499823 VI. Application for patent scope Where the manufacturing method described in the aforementioned 66th item of the aforementioned ϋ11㈣㈣ item 66 is one step private, a plurality of the aforementioned capacitors are housed in the recessed portions on the core substrate. ^ 6 9 · The manufacturing method as described in item 66 of the scope of patent application, wherein before the step of month] =), a through hole is formed on the resin plate, and a resin plate is pasted on the resin plate forming the aforementioned through hole, A core substrate having a concave portion is formed. 70. The manufacturing method according to item 66 of the scope of application for a patent, wherein when t is not to escape the lower interlayer window, it is filled with electroplating to form a filled interlayer window with a flat surface. Among them, on the surface, the manufacturing method described in item 66 of the patent application range is used to form the aforementioned lower interlayer window. After filling the inside with resin, the metal film is formed to form a filled interlayer window with a flat surface. 7 2 · The manufacturing method described in item β 8 of the patent application scope. After step (a) above, pressure is applied from above on the plurality of capacitors in the recess to make the heights of the capacitors uniform. 2160-3403-Ff-ptd Page 117
TW089117963A 1999-09-02 2000-09-02 Printed circuit board and its manufacturing method TW499823B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425886B (en) * 2011-06-07 2014-02-01 Unimicron Technology Corp Package structure having embedded electronic components and method of making same
TWI587760B (en) * 2014-07-22 2017-06-11 Fujikura Ltd A printed circuit board
US10283439B2 (en) 2016-12-22 2019-05-07 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package including electromagnetic interference shielding layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425886B (en) * 2011-06-07 2014-02-01 Unimicron Technology Corp Package structure having embedded electronic components and method of making same
TWI587760B (en) * 2014-07-22 2017-06-11 Fujikura Ltd A printed circuit board
US9788426B2 (en) 2014-07-22 2017-10-10 Fujikura Ltd. Printed wiring board
US10283439B2 (en) 2016-12-22 2019-05-07 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package including electromagnetic interference shielding layer
TWI660481B (en) * 2016-12-22 2019-05-21 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package

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