TW498417B - Method for correcting electron beam and electron beam exposure system - Google Patents

Method for correcting electron beam and electron beam exposure system Download PDF

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Publication number
TW498417B
TW498417B TW90124232A TW90124232A TW498417B TW 498417 B TW498417 B TW 498417B TW 90124232 A TW90124232 A TW 90124232A TW 90124232 A TW90124232 A TW 90124232A TW 498417 B TW498417 B TW 498417B
Authority
TW
Taiwan
Prior art keywords
mark
electron beam
electron beams
marks
electron
Prior art date
Application number
TW90124232A
Other languages
English (en)
Chinese (zh)
Inventor
Shinichi Hamaguchi
Hiroshi Yasuda
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Application granted granted Critical
Publication of TW498417B publication Critical patent/TW498417B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW90124232A 2000-10-03 2001-10-02 Method for correcting electron beam and electron beam exposure system TW498417B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000303147A JP4112791B2 (ja) 2000-10-03 2000-10-03 電子ビーム補正方法及び電子ビーム露光装置

Publications (1)

Publication Number Publication Date
TW498417B true TW498417B (en) 2002-08-11

Family

ID=18784389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW90124232A TW498417B (en) 2000-10-03 2001-10-02 Method for correcting electron beam and electron beam exposure system

Country Status (3)

Country Link
JP (1) JP4112791B2 (ja)
TW (1) TW498417B (ja)
WO (1) WO2002029867A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100437882C (zh) 2002-10-30 2008-11-26 迈普尔平版印刷Ip有限公司 电子束曝光系统
EP1830384B1 (en) * 2003-05-28 2011-09-14 Mapper Lithography Ip B.V. Charged particle beamlet exposure system
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5744601B2 (ja) * 2010-04-20 2015-07-08 キヤノン株式会社 電子線描画装置及びデバイス製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118114A (ja) * 1982-01-06 1983-07-14 Hitachi Ltd 荷電粒子線描画装置
JPH0282515A (ja) * 1988-09-19 1990-03-23 Matsushita Electron Corp 電子ビーム描画方法
JP3298347B2 (ja) * 1995-01-11 2002-07-02 株式会社日立製作所 電子線描画装置

Also Published As

Publication number Publication date
JP4112791B2 (ja) 2008-07-02
JP2002110527A (ja) 2002-04-12
WO2002029867A1 (fr) 2002-04-11

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