498417 Λ7 B7 8276pif.doc/〇〇9 五、發明說明（/ ) 發明領域‘ ------------m-裝— (請先閱讀背面之注意事項再填寫本頁) 本發明係關於電子束補正方法及電子束曝光裝置者。 並且本申請案關連下述日本專利申請。對於認定可將參照 文獻編入有所指定的國家，可參照下述的申請案所述的內 容編入本申請案成爲本申請案所述的一部分。 曰本專利申請2000-303147 申請日期2000年10月3日 枝術背景 用複數的電子束(beam)，在晶圓（wafer)進行曝光處理 的習知電子束(beam)曝光裝置，係在進行補正電子束(beam) 的照射位置時，在補正全部電子束(beam)的照射位置之一 個標的（mark)部材，照射全部電子束(beam)以求補正値。 隨著近年來的半導體元件（device)的微紐化，趨向利 用電子束(beam)曝光裝置的半導體元件（device)之量產，而 對曝光處理或電子束補正方法的高速化有所期待。 經濟部智慧財產局員工消費合作社印製 但是，習知的電子束（beam)曝光裝置，每當進行補正 時，因需將全部電子束（beam)照射該一個標的（mark)的關 係，完成一個電子束（beam)的補正後，再進行其他電子束 (beam)的補正而需要移動載置台（stage)。因此，進行補正 全部電子束之所需時間較長，而期待能以短時間補正電子 束(beam)的照射位置之方法。 本發明係提供一種電子束（beam)補正方法及電子束 (beam)曝光裝置，以解決上述的課題爲目的。此目的可由 組合申請專利範圍的獨立項所述的特徵來達成。並且，依 附項係規定本發明更有利的實施例。 4 297公釐） 本紙張尺度適用中關家鮮（CNS)A伐格 經濟部智慧財產局員工消費合作社印製 498417 五、發明說明（>) 發明的提示 即，本發明的第一形態，係用複數個標的（mark)，補 正複數個電子束（beam)的照射位置之電子束（beam)補正方 法，包括標的（mark)位置檢出階段、照射位置檢出階段， 及算出階段。其中，標的（mark)位置檢出階段，係由複數 個電子束（beam)中的一個電子束照射複數個標的（mark)， 以檢出對一個電子束(beam)的照射位置之複數個標的（mark) 之相對標的（mark)位置者。照射位置檢出階段，係以複數 個電子束（beam)照射複數個標的（mark)中之一個標的 (mark)，以檢出對一個標的（mark)的複數個電子束（beam) 之相對照射位置者。算出階段’係依照以上所檢出的複數 個標的（mark)的標的（mark)位置，及檢出的複數個電子束 (beam)的照射位置，以算出補正複數個電子束（beam)的照 射位置之補正値者。 標的（mark)位置檢出階段，也可包含，在複數個標的 (mark)中，以所期望之標的(mark)爲基準標的（mark)，以檢 出對基準標的（mark)之其他標的(mark)之相對標的（mark)位 置的階段。 標的（mark)位置檢出階段，也可包含，在複數個標的 (mark)中，以所期望的標的（mark)爲基準標的（mark)，以檢 出對基準標的（mark)的其他標的（mark)之相對大小的階 段。 照射位置檢出階段也可包含，在複數個電子束中，以 所期望的電子束（beam)的照射位置爲基準照射位置，由複 5 本紙張尺度適用中國國家標準（CNS)Al規格（210 X 297公釐） — — — — — — — — — — -1111111 ^» — — — 1 — — — — (請先閱讀背面之注意事項再填寫本頁) 498417 Λ7 B7 8276pif.doc/009 五、發明說明) 數個電子束（beam)照射基準標的（mark) ’以檢出其他電子 束（beam)對基準照射位置的相對照射位置之階段。 算出階段，也可包含，依照其他標的（mark)對基準標 的（mark)之相對標的（mark)位置，及其他電子束（beam)對 基準照射位置的相對照射位置，以算出補正複數個電子束 (beam)的照射位置之階段。 複數個標的（mark)，係設在複數個各電子束（beam)所 對應的位置，也可更再包括照射階段，照合位置檢出階段， 及照合階段。照射階段係用補正値，補正複數個電子束 (beam)的照射位置，以照射複數個電子束（beam)各所對應 的標的（mark)者。照合位置檢出階段，係在照射階段，檢 出照射標的（mark)之電子束（beam)的照射位置者。照合階 段，係在照合位置檢出階段，以檢出的各電子束（beam)的 照射位置與標的（mark)之檢出位置照合，以判斷補正値是 否正確合適。 用複數個電子束（beam)，每當進行所定次數的曝光處 理時，也可更再包括照合位置檢出階段，及照合階段的重 複階段。 載置設有複數個標的（mark)之基準晶圓（wafer)的晶圓 載置台（wafer stage)，更再具備補正載置台位置的補正階 段，而標的（mark)位置檢出階段，也可以經補正的載置台 (stage)位置爲基準，以檢出複數個標的（mark)之相對標的 (mark)位置。 本發明的其他形態，係爲一種電子束（beam)曝光裝 6 -n a— a.1 ϋ ϋ ϋ ϋ I ϋ ϋ · _1 I 1_1 an 1 1 _1 . n i__i a_i ϋ· mmMm .1 ϋ I i (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 498417 A7 B7 8276pif.doc/009 五、發明說明（今） 置，由電子束（beam)使晶圓（wafer)曝光者。包括晶圓載置 台(wafer stage)、電子銃、偏向部、電子檢出部、標的（mark) 檢出部、照射位置檢出部及算出部。其中晶圓載置台（wafer stage)，係載置有複數個(mark)的基準晶圓者。電子銃，係 發生複數個電子束者。偏向部爲使電子束（beam)偏向，以 照射標的（mark)者。電子檢出部係檢出電子束（beam)照射 標的（mark)之反射電子者。標的（mark)位置檢出部，係依 照電子檢出部所輸出的電氣信號，由複數個電子束（beam) 的一個電子束（beam)照射複數個標的（mark)，以檢出複數 標的（mark)對一個電子束（beam)的照射位置之相對標的 (mark)位置者。照射位置檢出部，係依照電子檢出部所輸 出的電氣信號，用複數個電子束（beam)照射複數個標的 (mark)中之一個標的（mark)，以檢出複數個電子束（beam) 對一個標的（mark)的相對照射位置者。算出部，係依照複 數個標的（mark)之位置，及複數個電子束（beam)的照射位 置，算出補正複數個電子束(beam)的照射位置者。 在實質上，複數個電子束(beam)的照射位置之間隔， 也可等於複數個標的（mark)的間隔。 並且，上述的發明槪要，並非列舉本發明所需要的全 部特徵，此等特徵群的局部組合（subcombination)也可成爲 一種發明。 爲讓本發明的上述原理和其他目的、特徵、和優點能 更明顯易懂，以下特舉較佳實施形態，並配合所附圖式， 作詳細說明。 7 本紙張又度適《"^國國家標準（CNS)A4規格（21〇χ297公餐) -----------裝----I---訂-------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 498417 8276pif.doc/009 八7 — ____B7 ___ 五、發明說明（< ) 圖式之簡m說明 圖1表示本發明的一實施形態的電子束（beam)曝光裝 置100的構成圖。 圖2表示在電子束（beam)曝光裝置100，校正處理電 子束（beam)的照射位置之流程圖（flow chart)。 圖3A至圖3B表示電子銃104的配置例及配置複數個 標的（mark)47的基準晶圖（wafe〇45的一例之圖。 圖4A至圖4D表示在載置台（stage)位置補正（S12)、標 的（mark)位置檢出（S14)、及標的（mark)大小檢出（S16)與電 子束（beam)發生部10,及基準晶圖（wafer)45的位置關係 圖。 圖5A至圖5D表示在照射位罝檢出（S18)與電子束 (beam)發生部10及基準晶圖（wafer)45的位置關係圖。 圖6表示在照合位置檢出（S24)與電子束(beam)發生部 10及基準晶圖（wafer)45的位置關係圖。 圖式之標記說明： -----------裝 i — (請先閱讀背面之注意事項再填寫本頁) 訂： 經濟部智慧財產局員工消費合作社印製 8 10 電子束(beam)發生部 12 發生熱電子的陰極（cathode) 14 第一成形部材 16 第一軸電子透鏡（lens) 18 第一成形偏向部 20 第二成形偏向部 22 第二成形部材 8 本紙張尺度適用中國國家標準（CNS)A丨規格（210 X 297公餐） 498417 經濟部智慧財產局員工消費合作社印製 五、發明說明（W ) 24 第二多軸電子透鏡（lens) 26 消隱（blanking)電極陣列（array) 28 電子束（beam)遮蔽部材 34 第三多軸電子透鏡（lens) 36 第四多軸電子透鏡（lens)38 偏向部40 電子檢出部 44 晶圓（wafer) 45 基準晶圓（wafer) 46 晶圓載置部（wafer stage) 47 複數個標的（mark) 48 晶圓載置台（wafer stage)驅動部 50 激光干涉儀(laser interferometer) 52 第五多軸電子透鏡（lens) 55 鏡子（mirror) 80 電子束(beam)控制部82 多軸電子透鏡(lens)控制部84 成形偏向控制部 86 消隱(blanking)電極陣列（array)控制部92 偏向控制部94 反射電子處理部 96 晶圓載置台（wafer stage)控制部 100 電子束（beam)曝光裝置 102 電柵（grid) ------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂· 本紙張尺度適用中國國家標準（CNS)Al規格mo X 297公釐） 經濟部智慧財產局員工消費合作社印製 498417 8276pif .doc/009 __B7___ 五、發明說明（Λ ) 104 複數個電子銃 106 形成電子銃104的基材 110 電子束(beam)形成手段 112 照射切換手段 114 晶圓（wafer)投影系 120 個別控制部 130 統括控制部 140 控制系 150 曝光部 實施本發明的最佳形態 以下，以發明的實施形態說明本發明’以下的實施形 態並非限定申請專利範圍的發明，並且，實施形態所說明 的特徵組合之全部，也非限定爲發明必須的解決手段。 圖1表示關於本發明的一實施形態之電子束(beam)曝 光裝置100的構成。電子束(beam)曝光裝置100係包括曝 光部150、及控制系140。曝光部150，係由電子束(beam) 在晶圓(wafe〇44實施所定的曝光處理。控制系140，係控 制曝光部150所含各構件的動作。 曝光部150在筐體8內部包括電子束成形手段110， 照射切換手段112，和晶圓用投影系114的電子光學系。 晶圓載置台（wafer stage)46和晶圓載置台驅動部48的載置 台系。以及電子檢出部40。其中，電子束(beam)成形手段 11〇 ’係使電子束(beam)的斷面形狀成形爲所期望的形狀。 照射切換手段112，係對複數個電子束（beam)的每-個電 ____^ 本紙張尺度適用中國國家標準（CNS)Al規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 498417 經濟部智慧財產局員工消費合作社印製 82 7 6pif .d〇c/〇〇9 五、發明說明（？） 子束，以獨立的切換，決定是否照射到晶圓(wafe〇44。晶 圓用投影系Π4，係調整轉照在晶圓44的影像之方向及尺 寸。晶圓載置台（wafer stage)46，係載置應使圖型（pattern) 曝光的晶圓（wafer)44。晶圓載置台驅動部48，係驅動晶圓 載置台（wafer stage)46者。電子檢出部40係檢出，電子束 (beam)照射設在補正電子束照射位置所用的基準晶圓上的 複數個標的（mark)時，所發生的反射電子。電子檢出部40， 再依照所檢出的反射電子量，輸出電氣信號給反射電子處 理部94。 電子束（beam)成形手段110係包括電子束發生部1〇， 第一成形部材14，第二成形部材22，第一多軸電子透鏡 16,第一成形偏向部18,及第二成形偏向部20。其中電 子束發生部1〇係發生複數個電子束。第一成形部材14及 第二成形部材22，係有複數個開口部，在電子束通過時， 使電子束的斷面形狀成形。第一多軸電子透鏡（lens)16， 係各獨立的收歛複數個電子束，並調整電子束的焦點。第 一成形偏向部18，和第二成形偏向部20，係使通過第一 成形部材14的複數個電子束，以獨立偏向者。 電子束發生部10，有複數個電子銃104，及形成電子 銃104的基材106，電子銃104，包含發生熱電子的陰極 (cathode)12，及以圍繞陰極12所形成的電柵（grid)102，使 陰極12發生的熱電子穩定。陰極12和電柵102，以在電 氣上成絕緣爲宜。在本實施例，電子束發生部10係在基 材106上，以所定的間隔，有複數個電銃〗〇4，以形成電 11 本紙張尺度適用中國國家標準（CNS)A丨規格（210 X 297公堃） ----------裝i I (請先閱讀背面之注意事項再填寫本頁) ·. 498417 經濟部智慧財產局員工消費合作社印製 8276pif.doc/009 _ B7___ 五、發明說明（°\ ) 子銃陣列（array)。 第一成形部材14，及第二成形部材22的電子束照射 面，以具有接地的白金等的金屬膜爲宜。第一成形部材14 及第二成形部材22所含的複數個開口部的斷面形狀，爲 使電子束能有效率的通過’也可沿電子束的照射方向擴 寬。並且，第一成形部材14，及第二成形部材22所含的 複數個開口部，以矩形形成爲宜。 照射切換手段Π2包括第二多軸電子透鏡（lens)24, 消隱(blanking)電極陣列（array)26，及電子束遮蔽部材28。 其中，第二多軸電子透鏡（lens)24係獨立收歛複數個電子 束，並調整電子束的焦點。消隱（blanking)電極陣列 (airay)26，係由使複數個電子束的每一個電子束獨立偏 向，以對每一個電子束獨立切換使電子束照射晶圓44，或 否。電子束遮蔽部材28，係遮蔽在消隱（blanking)電極陣 列（array)26偏向的電子束。並且，在其他實施例消隱 (blanking)電極陣列（array)，也可爲消隱•孔徑•陣列 (blanking · aperture · array) ° 晶圓（wafer)用投影系114,包含第三多軸電子透鏡 (lens)34，第四多軸電子透鏡（lens)36，偏向部38，及第五 多軸電子透鏡（lens)52。其中第三多軸電子透鏡（lens)34， 係獨立收歛複數個電子束，以縮小電子束的照射徑。第四 多軸電子透鏡（lens)36，係獨立收歛複數個電子束，以調 整子束的焦點。偏向部38，係對複數個電子束，以獨立的 使每一個電子束偏向到晶圓44所期望的位置。第五多軸 12 本紙張尺度適用中國國家標準（CNS)A.丨規格（210 x 297公餐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂 498417 Α7 Β7 8276pif.doc/009 五、發明說明（\Ό ) 電子透鏡（lens)52，係對晶圓44具有物鏡（objective lens) 的機能，以獨立的收歛複數個電子束。 控制系140，有統括控制部130及個別控制部120。 個別控制部120,包含電子束控制部80,多軸電子透鏡（lens) 控制部82，成形偏向控制部84，消隱(blanking)電極陣列 (array)控制部86，偏向控制部92，反射電子處理部94， 及晶圓載置台（wafer stage)控制部96。統括控制部130， 係例如爲工作站（warkstation)，統括控制個別控制部120 所含的各控制部。電子束控制部80係控制電子束發生部 10。多軸電子透鏡控制部82，係控制供給第一多軸電子透 鏡16，第二多軸電子透鏡24，第三多軸電子透鏡34，第 四多軸電子透鏡36，及第五多軸電子透鏡52的電流。 成形偏向控制部84，係控制第一成形偏向部18，及 第二成形偏向部20。消隱（blanking)電極陣列（array)控制 部86，係控制施加在消隱(blanking)電極陣列（array)所含 的偏向電極之電壓。偏向控制部92，係控制施加在偏向部 38所含複數個偏向器所有的偏向電極之電壓。反射電子處 理部94，係將依電子檢出部40輸出的電氣信號所檢出的 反射電子量通知統括控制部130。統括控制部130係根據 檢出的反射電子量，可求設在基準晶圓上的標的（mark)之 相對位置及尺寸。晶圓載置台（wafer stage)控制部96，係 控制晶圓載置台（wafer stage)驅動部48，移動晶圓載置台 (wafer stage)46至所定的位置。 茲說明有關本實施形態的電子束（beam)曝光裝置100 13 本紙張尺度ϋ中國國家標準（CNS)A.丨規格（2l〇x 297公坌) ------ ------------裝--- (請先閱讀背面之注意事項再填寫本頁) 訂· 經濟部智慧財產局員工消費合作社印製 498417 8276pif.doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（Λ ) 的動作。最初，補正晶圓載置台（wafer stage)46的載置台 (stage)位置。其次，用設複數個標的(mark)的基準晶圓， 進行校正複數個電子束的照射位置。設複數個標的（mark) 的基準晶圓載置在晶圓載置台（wafer stage)46上。電子束 發生部1〇，發生複數個電子束。偏向部38，使複數個電 子束的各電子束偏向，以便照射設基準晶圓的標的（mark)。 電子檢出部40，檢出照射標的（mark)的電子束之反射電子 量。在統括控制部130，未經圖示的標的（mark)位置檢出 部，依照電子檢出部40所檢出的反射電子量，由複數個 電子束的一個電子束照射複數個標的（mark)，以檢出對一 個電子束的照射位置之複數個標的（mark)的相對標的（mark) 位置，未經圖示的照射位置檢出部，依照電子檢出部40 所檢出的反射電子量，由複數個電子束照射複數個標的 (mark)中之一個標的（mark)，以檢出對一個標的（mark)的複 數個電子束之相對照射位置。然後在統括控制部13〇，未 經圖示的算出部，依照所檢出的複數個標的(mark)之位置， 及複數個電子束的照射位置，算出補正複數個電子束的照 射位置之補正値。 補正電子束的照射位置後，晶圓44載置在晶圓載置 台(wafer stage)46，按照所算出的補正値，開始曝光處理。 首先，由電子束發生部10，產生複數個電子束。在電子束 發生部10,所發生的電子束照射第一成形部材14，以便 成形。 第一多軸電子透鏡（lens)16，係獨立收歛成形爲矩形 14 本紙張尺度適用中國國家標準（CNS)A丨規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝 訂· 498417 82?6pif .d〇c/〇〇9 Λ7 -- B7 五、發明說明（\V) 的複數個電子束，以獨立進行調整每一個電子束對第二成 形部材22的電子束之焦點。第一成形偏向部18，係以獨 立的使成形爲矩形的複數個電子束之每一個電子束能對第 二成形部材22所期望之位置偏向。第二成形偏向部20， 係以獨立的使在第一成形偏向部1 8所偏向的複數個電子 束之每一個電子束，能對第二成形部材22略爲垂直方向 偏向。含有矩形形狀的複數個開口部之第二成形部材22， 係將照射各開口部的具有矩形斷面形狀的複數個電子束， 更再成形爲可照射晶圓（wafer)44所期望的矩形斷面形狀的 電子束。 第二多軸電子透鏡（lens)24，係獨立收歛複數個電子 束，以獨立進行調整每一個電子束，對消隱(blanking)電極 陣列（array)26的電子束之焦點。經第二多軸電子透鏡 (lens)24，調整過焦點的電子束，通過消隱（blanking)電極 陣列（array)26所含的複數個孔徑(aperture)。 經濟部智慧財產局員工消費合作社印製 ------!丨！^||||·-裝· I I (請先閱讀背面之注意事項再填寫本頁) ¾. 消隱（blanking)電極陣列（array)控制部86，係控制是 否對設在消隱（blanking)電極陣列（array)26所形成的各孔 徑（aperture)近傍之偏向電極施加電壓。消隱（blanking)電 極陣列（array)26，係按照施加在偏向電極的電壓，切換是 否使電子束照射晶圓（wafer)44。 不受消隱(blanking)電極陣列（array)26偏向之電子束， 係由第三多軸電子透鏡（kns)34，縮小電子束徑，再通過 電子束遮蔽部材28所含的開口部。第四多軸電子透鏡 (lens)36，係獨立收歛複數個電子束，以獨立進行每一個 本紙張K度適用中國國家標準（CNSM丨規格（210x297公釐） 經濟部智慧財產局員工消費合作社印製 498417 8276pif.doc/009 A/ ___B7___ 五、發明說明（G ) 電子束對偏向部38的電子束之焦點，經調整焦點的電子 束，入射至偏向部3 8所含的偏向器。 偏向控制部92，以獨立的控制偏向部38所含的複數 個偏向器。偏向部38，係以獨立的使入射到複數個偏向器 的複數個電子束之每一個電子束偏向至晶圓（wafer)44所期 望的曝光位置。通過偏向部38的複數個電子束，係由第 五多軸電子透鏡（lens)52，調整對晶圓（wafer)44的焦點， 以照射晶圓（wafer)44。 在曝光處理中，晶圓載置台（wafer stage)控制部96， 使晶圓載置台（wafer stage)48，移動至一定方向。消隱 (blanking)電極陣列（array)控制部86，依照曝光圖型資料 (pattern data)決定使電子束通過的孔徑（aperture)，進行對 孔徑(aperture)的電力控制。由配合晶圓(wafer)44的移動’ 適宜的變更使電子束通過的孔徑（aperture)，再由偏向部 38，使電子束偏向，而可能使所期望的電路圖型（pattern) 在晶圓（wafe〇44曝光。 圖2，係在電子束曝光裝置100，校正處理電子束的 照射位置的流程圖。在S10開始本流程圖。在S12補正載 置設複數個標的（mark)的基準晶圓（wafer)之晶圓載置台 (wafer stage)46的載置台（stage)位置。在S14，用所定的 電子束照射各標的（mark)，以檢出對所定標的（mark)之相 對標的（mark)位置。在S16檢出對所定標的（mark)之相對 標的（mark)的尺寸。在S18，用各電子束照射所定之標的 (mark)，以檢出對所定標的（mark)之各電子束的相對照身寸 --------丨！-裝·丨I (請先閱讀背面之注意事項再填寫本頁) 訂： _m· 本紙張尺度適用中國國家標準（CNS)Al規格（210 X 297公釐） 498417 8276pif .doc/009 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（丨 位置。在S20，依照在$ 14、S16及S1 8所檢出的標的（mark) 之位置，標的（mark)之尺寸及電子束的照射位置’算出電 子束的補正値。在S22，用在S20所算出的補正値，補正 複數個電子束的照射位置’以照射複數個電子束各個所對 應的標的（mark)。在S24 ’檢出在S22所照射的電子束之 照射位置。在S26，照合在S24所檢出的電子束之照射位 置，和標的（mark)之檢出位置’判斷所所算出的補正値是 否正確適當。如判斷補正値爲不正確不適當時返回S12’ 重複同樣的處理。若判斷補正値爲正確適當時，進至S28 ° 在S28，用判斷爲正確適當之補正値’進行所定次數的曝 光處理。在S30 ’判斷所期望的全部曝光處理是否完了。 若判斷全部曝光處理尙未完了時，返回S12 ’重複同樣的 處理。如判斷全部曝光處理完了時，進至S32。在S32， 爲本流程圖的終了。 在上述流程圖的說明，係在標的（mark)位置檢出（S14) 及標的（mark)尺寸檢出（S16)後，進行電子束的照射位置檢 出（S18)，也可在電子束的照射位置檢出（S18)之後，進行 標的（mark)位置檢出（S14)及標的（mark)尺寸檢出（S16)。並 且，在S26判斷補正値爲不正確不適當時，及在S30，判 斷全部曝光處理尙未完了時，再度進行載置台（stage)位置 補正（S12)，也可不進行載置台（stage)位置補正（S12)，而 重複標的（mark)檢出（S14)以下的部分。 圖3A及3B表示電子銃1〇4的配置例及配置複複數 個標的（mark)47，的基準晶圓（wafer)45的一例。圖3A表 17 ^紙張尺度適用中國國家標準（CNS)A丨規格（21〇 X 297公餐） ----------·-裝—— (請先閱讀背面之注意事項再填寫本頁) 訂. ,«· 498417 8276pif.d〇c/009 Λ7 β7 經濟部智慧財產局員工消費合作社印製 五、發明說明（li ) 示配置69個電子銃104的基材106。圖3Β表示設69個 標的（mark)47的基準晶圓（wafer)45。在基材106所配置的 各個電子銃1〇4,與設在基準晶圓（wafer)45的各個標的 (mark)47，係設在所對應的位置。因此，各個電子銃1〇4 所照射的電子束的照射位置之間隔，與設在基準晶圓 (wafer)45的複數個標的（mark)47之間隔，在實質上以相等 爲宜。 圖4A、B、C、D表示，在載置台（stage)位置補正（S12)， 標的（mark)位置檢出（S14)及標的（mark)尺寸檢出（S16)與電 子束發生部10及基準晶圓（wafe〇45的位置關係。最初， 用圖4A所示激光干涉儀（laser interferometer)50，補正基 準晶圓（wafer)的晶圓載置台（wafer stage)46的載置台（stage) 位置。激光干涉儀（laser interferometer)50，以複數個激光 (laser)照射設在晶圓載置台（wafer stage)46的鏡子 (mirror)55，再接受該複數個激光（laser)的反射光，按照照 射的激光及反射光，檢出晶圓載置台（wafer stage)46的位 置及傾斜，鏡子55的傾斜及彎曲。統括控制部130，算出 補正晶圓載置台（wafer stage)46的載置台（stage)位置的補 正値以後，根據該補正値控制晶圓載置台（wafer stage)46。 補正晶圓載置台（wafer stage)46的載置台（stage)位置 後，進行檢出對所定標的（mark)的相對標的（mark)之位置 及尺寸。首先，將所定標的（mai*k)47移動至所定電子銃1〇4 的照射位置，以決定成爲基準的電子銃104及標的 (mark)47。在本實施例，以最下部中央的電子銃104之照 18 本紙張尺度適用中國國家標準（CNS)A丨規格（210 X 297公爱) "· (請先閱讀背面之沒意事項再填寫本頁) 裝 · %· 498417 82 7 6pif .doc/009 Λ7 B7 五、發明說明（（b ) (請先閱讀背面之注意事項再填寫本頁) 射位置爲基準照射位置，並以最上部中央的標的（mark)47 爲基準標的（mark)。由最下部中央的電子銃1〇4爲基準照 射位置，並由最上部中央的標的（mark)47爲基準標的（mark) 者，係爲使晶圓載置台（wafer stage)46的移動距離成爲最 小。 如圖4A、圖4B、圖4C及圖4D所示，由移動晶圓載 置台（wafer stage)46，使最下部中央的電子銃1〇4之電子 束，照射全部的標的（mark)47，以檢出，對最下部中央的 電子銃104之照射位置的全部標的（mark)之相對標的（mark) 位置。更再，檢出對基準標的（mark)之其他標的（mark)的 相對標的（mark)位置，及檢出對基準標的（mark)的其他標 的（mark)之相對尺寸。 經濟部智慧財產局員工消費合作社印製 圖5A、B、C、D表示在照射位置檢出（S18)與電子束 發生部10及基準晶圓（wafer)45的位置關係。如圖5A、圖 5B、圖5C及圖5D所示，移動晶圓載置台(wafer stage)46， 由全部電子束，照射成爲基準標的（mark)之最上面中央部 之標的（mark)47，以檢出對基準標的（mark)之全部電子銃 104的照射位置。再來，檢出對基準照射位置的其他電子 束之照射位置。然後，在統括控制部13〇，根據對基準標 的（mark)之其他標的（mark)的相對位置，和對基準照射位 置的其他電子束的相對照射位置，算出補正全部電子束的 照射位置之補正値。 圖6表示在照合位置檢出（S24)與電子束發生部10, 及基準晶圓（wafer)45的位置關係。複數個標的（mark)47， 19 本紙張尺度適用中國國家標準（CNS)A·丨規恪（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 498417 8276pif.doc/009 ^ _____B7_ 五、發明說明（νη) 係設在複數個電子銃104，各個所對應的位置，用在統括 控制部130算出補値，補正全部電子束的照射位置，以照 射從電子銃104所發生各個電子束所對應的標的（mark)。 然後，檢出照射各個標的（mark)的電子束之照射位置。照 合所檢出的各電子束之照射位置，和在標的（mark)位置檢 、 · \ 出（S14)所檢出的標的（mark)47之檢出位置。上述的照合處 理，每在進行所定次數的曝光處理時，以重複進行爲宜。 如以上的說明，依照本發明，由檢出對基準標的（mark) 的其他標的（mark)之相對標的（mark)位置，及檢出對基準 照射位置的其他電子束的照射位置，可決定補正全部電子 束的照射位置之補正値。因此，用全部標的（mark)及全部 電子束，不需移動晶圓載置台（wafer stage)能以短時間， 可再度檢出電子束的照射位置。並且，能由用一個電子束 檢出複數個標的（mark)，以檢出標的（mark)之相對位置和 尺寸。 以上，雖用實施形態說明本發明，但本發明的技術範 圍並非限定在上述實施形態所述的範圍，上述的實施形態 可再加以多種變更或改良。此種加以變更，改良的形態， 從申請專利範圍的敘述可知也得包含在本發明的技術範 圍。 利用的可能件 由上述的說明，可明瞭，本發明提供一種電子束補正 方法及電子束曝光裝置，係用複數個標的（mark)補正複數 個電子束的照射位置者。 20 本紙張&度適用中國國家標準（CNS)A·丨規格（210 X 297公釐） <請先閱讀背面之注意事項再填寫本頁) 裝 •鲁·498417 Λ7 B7 8276pif.doc / 〇〇9 V. Description of invention (/) Field of invention '------------ m-pack — (Please read the notes on the back before filling this page) This The invention relates to an electron beam correction method and an electron beam exposure device. And this application relates to the following Japanese patent applications. For those countries that have been identified as being able to incorporate reference documents, they can refer to the content described in the following application and incorporate it into this application as part of this application. Japanese patent application 2000-303147 Application date: October 3, 2000 The conventional electron beam exposure device that uses a plurality of electron beams (beams) to perform exposure processing on wafers is performing corrections. When the beam is irradiated, the beam is irradiated with all the beams at one of the mark parts to correct the beam irradiation position. With the recent miniaturization of semiconductor devices, mass production of semiconductor devices using electron beam exposure devices is expected, and high-speed processing of exposure processing or electron beam correction methods is expected. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, the conventional electron beam (beam) exposure device needs to irradiate all the electron beams with this one mark every time it is corrected. After the electron beam (beam) is corrected, another electron beam (beam) is corrected and a stage needs to be moved. Therefore, it takes a long time to correct all the electron beams, and a method capable of correcting the irradiation position of the beams in a short time is expected. The present invention is to provide an electron beam correction method and an electron beam exposure device, which aim to solve the above-mentioned problems. This can be achieved by combining the features described in the separate items of the patent application scope. And, the appended clauses specify a more advantageous embodiment of the present invention. 4 297 mm) This paper size is suitable for printing by the Consumer Cooperatives of the Intellectual Property Bureau of the Zhongguan Jiaxian (CNS) A Vange Ministry of Economy 498417 V. Description of the invention (i.e., the first form of the invention, The electron beam correction method using a plurality of marks to correct the irradiation positions of the plurality of electron beams includes a mark position detection stage, an irradiation position detection stage, and a calculation stage. Among them, the mark position detection stage is to irradiate a plurality of marks with one electron beam among a plurality of electron beams, so as to detect a plurality of marks on an irradiation position of one electron beam. (Mark) Relative to the mark position. In the detection position of the irradiation position, one of a plurality of marks is irradiated with a plurality of electron beams to detect the relative irradiation of the plurality of electron beams to a mark Positioner. The calculation stage is based on the detected mark positions of the plurality of marks and the detected irradiation positions of the plurality of electron beams, so as to calculate and correct the irradiation of the plurality of electron beams. Position correction. The mark position detection stage may also include, among a plurality of marks, taking a desired mark as a reference mark, and detecting other marks on the reference mark ( mark) relative to the mark position. The mark position detection phase may also include, among a plurality of marks, taking a desired mark as a reference mark, and detecting other marks (for the reference mark) mark). The detection position of the irradiation position may also include, among a plurality of electron beams, a desired irradiation position of a beam as a reference irradiation position, and the paper size is adapted to the Chinese National Standard (CNS) Al specification (210 X 297 mm) — — — — — — — — — — — -1111111 ^ »— — — 1 — — — — (Please read the notes on the back before filling this page) 498417 Λ7 B7 8276pif.doc / 009 V. Description of the invention) A stage in which a plurality of electron beams (beams) irradiate a reference mark 'to detect relative irradiation positions of other electron beams (beams) to the reference irradiation position. The calculation stage may also include the relative mark positions of other marks (marks) to the reference marks and the relative irradiation positions of other electron beams (beams) to the reference irradiation positions to calculate and correct the plurality of electron beams. (beam) stage of irradiation position. The plurality of marks are set at the positions corresponding to the plurality of electron beams, and may further include an irradiation stage, a detection position of the photo-focusing position, and a photo-photographing stage. In the irradiation stage, a correction beam is used to correct the irradiation positions of a plurality of electron beams so as to irradiate a mark corresponding to each of the plurality of electron beams. The detection position of the collimated position is a person who detects an irradiation position of a beam of an electron beam (mark) in an irradiation stage. The photosynthesis phase is in the detection of photosynthetic position. The detected positions of the beams of the electron beams are aligned with the detection position of the mark to determine whether the correction is correct. With a plurality of electron beams (beam), each time a predetermined number of exposure processes are performed, the photo-position detection stage and the photo-repeat phase can be repeated. A wafer stage on which a plurality of mark reference wafers are placed is further provided with a correction stage for correcting the position of the placement stage, and the mark position detection stage may also be passed through The corrected position of the stage is used as a reference to detect the relative positions of a plurality of marks. Another aspect of the present invention is an electron beam exposure device 6 -na— a.1 ϋ ϋ ϋ ϋ I ϋ ϋ · _1 I 1_1 an 1 1 _1. N i__i a_i ϋ · mmMm .1 ϋ I i (Please read the notes on the back before filling out this page) The paper size printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies to Chinese National Standard (CNS) A4 (210 x 297 mm) 498417 A7 B7 8276pif.doc / 009 V. Description of the invention (present) device, the wafer is exposed by an electron beam. It includes a wafer stage, an electron beam, a deflection unit, an electronic detection unit, a mark detection unit, an irradiation position detection unit, and a calculation unit. The wafer stage is a wafer stage on which a plurality of reference wafers are placed. Electron beam, is a person who generates a plurality of electron beams. The deflecting part deflects the beam to irradiate the mark. The electronic detection unit detects a reflected electron from a beam irradiating a mark. The mark position detection unit is based on the electrical signals output by the electronic detection unit, and a plurality of marks are irradiated by one electron beam of the plurality of electron beams to detect the plurality of mark ( mark) Relative to the mark position of the irradiation position of an electron beam. The irradiation position detection unit is configured to irradiate one of the plurality of marks with a plurality of electron beams in accordance with an electrical signal output from the electronic detection unit to detect the plurality of electron beams. ) For the relative irradiation position of a mark. The calculation unit calculates and corrects the irradiation positions of the plurality of electron beams based on the positions of the plurality of marks and the irradiation positions of the plurality of electron beams. In essence, the interval between the irradiation positions of the plurality of electron beams may also be equal to the interval between the plurality of marks. In addition, the above-mentioned invention is not intended to list all the features required by the present invention, and a partial combination of these feature groups can also become an invention. In order to make the above principles and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with reference to the accompanying drawings. 7 This paper is also suitable for "National Standard (CNS) A4 Specification (21〇χ297 Meal) ----------- Installation ---- I --- Order ---- ---- (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 498417 8276pif.doc / 009 8 7 — ____B7 ___ 5. Description of the invention (<) Schematic diagram m Description FIG. 1 shows a configuration diagram of an electron beam exposure apparatus 100 according to an embodiment of the present invention. Fig. 2 shows a flow chart for correcting the irradiation position of the beam in the electron beam exposure apparatus 100. FIGS. 3A to 3B show an example of the arrangement of the electron beam 104 and an example of a reference crystal map (wafe〇45) in which a plurality of marks 47 are arranged. FIGS. 4A to 4D show corrections at the stage position (S12 ), Mark position detection (S14), mark size detection (S16), position relationship diagram of electron beam (beam) generation unit 10, and reference crystal wafer (wafer) 45. Figures 5A to Fig. 5D shows the positional relationship between the detection (S18) at the irradiation position, the electron beam (beam) generating unit 10, and the reference crystal map (wafer) 45. Fig. 6 shows the detection (S24) and the electron beam (beam) ) The positional relationship between the generator 10 and the reference wafer 45 (wafer) 45. The mark description of the diagram: ----------- install i — (Please read the precautions on the back before filling this page) Order: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8 10 Beam generator 12 Cathode that generates thermoelectrons 14 First forming member 16 First axis electron lens 18 First forming deflection section 20 The second forming deflection part 22 The second forming part 8 The paper size is applicable to China National Standard (CNS) A 丨 regulations (210 X 297 public meals) 498417 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (W) 24 Second multi-axis electronic lens (lens) 26 Blanking electrode array (array) 28 Electron beam ( beam) shielding member 34 third multi-axis electronic lens (lens) 36 fourth multi-axis electronic lens (lens) 38 deflection section 40 electronic detection section 44 wafer 45 reference wafer 46 wafer mounting section (Wafer stage) 47 multiple marks 48 wafer stage driving section 50 laser interferometer 52 fifth multi-axis electron lens (lens) 55 mirror 80 electron beam (beam) Control section 82 Multi-axis lens control section 84 Forming deflection control section 86 Blanking electrode array control section 92 Deflection control section 94 Reflective electronic processing section 96 Wafer stage control section 100 Electron beam exposure device 102 Electric grid (grid) ------------ install --- (Please read the precautions on the back before filling out this page) Order · This paper size applies to China Standard (CNS) Al size mo X 297 mm) Ministry of Economy Printed by the Intellectual Property Cooperative Consumer Cooperative 498417 8276pif .doc / 009 __B7___ V. Description of the Invention (Λ) 104 A plurality of electrons 106 forming the substrate of the electron 104 104 electron beam forming means 112 irradiation switching means 114 wafers (Wafer) Projection system 120 Individual control unit 130 Integrated control unit 140 Control system 150 Exposure unit Best mode for carrying out the present invention Hereinafter, the present invention will be described in terms of an embodiment of the invention. The following embodiments are not limited to inventions that are in the scope of patent applications, and All the feature combinations described in the embodiments are not limited to the means necessary for the invention. Fig. 1 shows a configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 and a control system 140. The exposure unit 150 performs predetermined exposure processing on a wafer (wafe04) by an electron beam (beam). The control system 140 controls operations of various components included in the exposure unit 150. The exposure unit 150 includes electrons inside the casing 8 The beam forming means 110, the irradiation switching means 112, and the electron optics system of the wafer projection system 114. The wafer stage 46 and the wafer stage drive unit 48 are mounted on the stage system, and the electronic detection unit 40. Among them The electron beam forming means 11 ′ is to shape the cross-sectional shape of the electron beam into a desired shape. The irradiation switching means 112 is to charge each of the plurality of electron beams (beam) ____ ^ This paper size applies the Chinese National Standard (CNS) Al specification (210 X 297 mm) (Please read the precautions on the back before filling this page). 498417 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 82 7 6pif .d 〇c / 〇〇9 V. Description of the invention (?) The beamlet is independently switched to decide whether to irradiate the wafer (wafe〇44. The projection system for wafers is used to adjust the image transmitted on wafer 44). Direction and size. Wafer mounting table (wafer sta ge) 46, which mounts a wafer 44 whose pattern is to be exposed. The wafer stage driving unit 48 drives the wafer stage 46. The electronic detection unit 40 detects Reflected electrons generated when an electron beam (beam) irradiates a plurality of marks on a reference wafer used to correct the irradiation position of the electron beam. The electron detection unit 40 then calculates the amount of reflected electrons according to the detected amount of reflected electrons. And outputs an electrical signal to the reflected electron processing unit 94. The electron beam forming means 110 includes an electron beam generating unit 10, a first forming member 14, a second forming member 22, a first multi-axis electron lens 16, and a first The forming deflection section 18 and the second forming deflection section 20. The electron beam generating section 10 generates a plurality of electron beams. The first forming member 14 and the second forming member 22 have a plurality of openings, and the electron beam passes through the opening. In this case, the cross-sectional shape of the electron beam is formed. The first multi-axis electron lens (lens) 16 converges a plurality of electron beams independently and adjusts the focus of the electron beam. The first forming deflection portion 18 and the second forming Deflection section 20 The plurality of electron beams of the shape member 14 are biased independently. The electron beam generator 10 includes a plurality of electron beams 104 and a base material 106 forming the electron beams 104. The electron beams 104 include a cathode that generates thermoelectrons. 12, and a grid 102 formed around the cathode 12 to stabilize the thermoelectrons generated by the cathode 12. The cathode 12 and the grid 102 are preferably electrically insulated. In this embodiment, electron beam generation The part 10 is on the base material 106, and there are a plurality of electric cells at a predetermined interval to form electric cells. 11 The paper size is applicable to the Chinese National Standard (CNS) A 丨 specifications (210 X 297 cm) --- ------- Install i I (Please read the precautions on the back before filling out this page) ·. 498417 Printed by the Employee Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8276pif.doc / 009 _ B7___ V. Description of the invention (° \ ) Array of children. The electron beam irradiation surfaces of the first forming member 14 and the second forming member 22 are preferably metal films having a ground such as platinum. The cross-sectional shapes of the plurality of openings included in the first forming member 14 and the second forming member 22 may be widened along the irradiation direction of the electron beam for efficient passage of the electron beam. The plurality of openings included in the first forming member 14 and the second forming member 22 are preferably formed in a rectangular shape. The irradiation switching means Π2 includes a second multi-axis electron lens (lens) 24, a blanking electrode array 26, and an electron beam shielding member 28. Among them, the second multi-axis electron lens (lens) 24 independently converges a plurality of electron beams, and adjusts the focus of the electron beams. The blanking electrode array (airay) 26 is made by individually biasing each of the plurality of electron beams to independently switch each electron beam so that the electron beam irradiates the wafer 44 or not. The electron beam shielding member 28 shields the electron beams deflected in the blanking electrode array 26. In addition, the blanking electrode array (blanking, aperture, array) in other embodiments may also be a blanking, aperture, and array ° projection system 114 for wafers, including a third multi-axis electron A lens 34, a fourth multi-axis electronic lens (lens) 36, a deflection portion 38, and a fifth multi-axis electronic lens (lens) 52. The third multi-axis electron lens (lens) 34 converges a plurality of electron beams independently to reduce the irradiation diameter of the electron beams. The fourth multi-axis electron lens (lens) 36 converges a plurality of electron beams independently to adjust the focus of the sub-beams. The deflection section 38 is configured to deflect each of the plurality of electron beams to a desired position of the wafer 44 independently. Fifth multi-axis 12 This paper size applies to Chinese National Standard (CNS) A. 丨 size (210 x 297 meals) (Please read the precautions on the back before filling this page) Binding 498417 Α7 Β7 8276pif.doc / 009 V. DESCRIPTION OF THE INVENTION (\ Ό) The electron lens (lens) 52 has the function of an objective lens on the wafer 44 and converges a plurality of electron beams independently. The control system 140 includes an integrated control unit 130 and an individual control unit 120. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a forming deflection control unit 84, a blanking electrode array control unit 86, a deflection control unit 92, and reflected electrons. The processing unit 94 and the wafer stage control unit 96. The integrated control unit 130 is, for example, a workstation, and controls the control units included in the individual control unit 120 in an integrated manner. The electron beam control unit 80 controls the electron beam generation unit 10. The multi-axis electronic lens control unit 82 controls the supply of the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36, and the fifth multi-axis electronic lens. 52 current. The forming deflection control section 84 controls the first forming deflection section 18 and the second forming deflection section 20. The blanking electrode array control unit 86 controls the voltage applied to the biasing electrodes contained in the blanking electrode array. The deflection control unit 92 controls the voltage applied to all the deflection electrodes of the plurality of deflectors included in the deflection unit 38. The reflected electron processing unit 94 notifies the integrated control unit 130 of the amount of reflected electrons detected by the electric signal output from the electronic detection unit 40. The integrated control unit 130 can determine the relative position and size of a mark provided on the reference wafer based on the detected amount of reflected electrons. The wafer stage control unit 96 controls the wafer stage driving unit 48 and moves the wafer stage 46 to a predetermined position. The electron beam exposure device 100 of this embodiment is described below. 13 Paper size: Chinese National Standard (CNS) A. 丨 Specification (2l0x 297 cm) ------ ------ ------ Equipment --- (Please read the precautions on the back before filling out this page) Order · Printed by the Intellectual Property Bureau's Consumer Consumption Cooperative of the Ministry of Economic Affairs 498417 8276pif.doc / 009 A7 B7 The cooperative prints the actions of V. Invention Description (Λ). Initially, the stage position of the wafer stage 46 is corrected. Next, the reference wafers provided with a plurality of marks are used to correct the irradiation positions of the plurality of electron beams. A plurality of mark reference wafers are set on a wafer stage 46. The electron beam generating section 10 generates a plurality of electron beams. The deflection section 38 deflects each electron beam of the plurality of electron beams so as to irradiate a mark on a reference wafer. The electron detection unit 40 detects the amount of reflected electrons of an electron beam irradiating a mark. In the integrated control unit 130, a mark position detection unit (not shown) irradiates a plurality of marks with one electron beam of a plurality of electron beams in accordance with the amount of reflected electrons detected by the electron detection unit 40. In order to detect the relative mark positions of a plurality of marks on the irradiation position of an electron beam, the irradiation position detection section (not shown) follows the reflected electron amount detected by the electronic detection section 40. , One of the plurality of marks is irradiated with the plurality of electron beams to detect the relative irradiation position of the plurality of electron beams to one mark. Then, the integrated control unit 13 and a calculation unit (not shown) calculate the correction of the irradiation positions of the plurality of electron beams according to the detected positions of the plurality of marks and the irradiation positions of the plurality of electron beams. value. After the irradiation position of the electron beam is corrected, the wafer 44 is placed on a wafer stage 46, and the exposure process is started in accordance with the calculated correction frame. First, the electron beam generating unit 10 generates a plurality of electron beams. In the electron beam generating section 10, the generated electron beam irradiates the first forming member 14 to be formed. The first multi-axis electronic lens (lens) 16, is independently converged and formed into a rectangular 14 This paper size applies to China National Standard (CNS) A 丨 specifications (210 X 297 mm) (Please read the precautions on the back before filling this page ) Binding · 498417 82? 6pif .d〇c / 〇〇9 Λ7-B7 V. A plurality of electron beams of the invention description (\ V) to independently adjust each electron beam to the electron beam of the second forming member 22 Focus. The first forming deflection portion 18 is configured to deflect each of the plurality of electron beams formed into a rectangular shape to a desired position of the second forming member 22 independently. The second forming deflection part 20 is capable of slightly deviating the second forming part 22 in a vertical direction by independently making each of the plurality of electron beams deflected in the first forming deflection part 18. The second forming member 22 including a plurality of rectangular openings is formed by irradiating a plurality of electron beams having a rectangular cross-sectional shape at each opening, and further forming a rectangular fracture that can irradiate a wafer 44 desired. Face shape electron beam. The second multi-axis electron lens (lens) 24 independently converges a plurality of electron beams to independently adjust each of the electron beams to focus the electron beams of the blanking electrode array 26 (blanking). Through the second multi-axis electron lens (lens) 24, the focused electron beam is passed through a plurality of apertures contained in a blanking electrode array 26. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ------! 丨! ^ |||| ····· II (Please read the precautions on the back before filling in this page) ¾. Blanking electrode array control unit 86 controls whether to set blanking Each aperture near the aperture formed by the electrode array 26 applies a voltage to the electrode. The blanking electrode array 26 is to switch whether or not the electron beam is irradiated to the wafer 44 according to the voltage applied to the bias electrode. The electron beam deflected by the blanking electrode array 26 is a third multi-axis electron lens (kns) 34, which reduces the electron beam diameter, and then shields the opening contained in the member 28 by the electron beam. The fourth multi-axis electron lens (lens) 36, which independently converges a plurality of electron beams, to independently perform each paper K degrees Applies to Chinese national standards (CNSM 丨 specifications (210x297 mm)) System 498417 8276pif.doc / 009 A / ___B7___ 5. Explanation of the invention (G) The focus of the electron beam on the electron beam of the deflection section 38, and the adjusted electron beam is incident on the deflector included in the deflection section 38. Deflection control The section 92 is used to independently control the plurality of deflectors included in the section 38. The deflection section 38 is used to independently deflect each of the plurality of electron beams incident on the plurality of deflectors to a wafer. 44 is a desired exposure position. The fifth multi-axis electron lens (lens) 52 is used to adjust the focus on the wafer 44 by the plurality of electron beams of the deflection unit 38 to illuminate the wafer 44. During the exposure process, the wafer stage control unit 96 moves the wafer stage 48 to a certain direction. The blanking electrode array control unit 86 follows the exposure pattern data. (p attern data) determines the aperture through which the electron beam passes, and performs electrical control of the aperture. According to the movement of the wafer 44, the aperture that allows the electron beam to pass through is appropriately changed, and then The deflection unit 38 deflects the electron beam, and may expose a desired circuit pattern on a wafer (wafe〇44). FIG. 2 is a flowchart of correcting the irradiation position of the electron beam by the electron beam exposure apparatus 100 This flowchart is started at S10. At S12, the stage position of the wafer stage 46 on which a plurality of mark reference wafers are placed is corrected. In S14, the predetermined stage is used. The electron beam irradiates each mark to detect the relative mark position of the mark. At S16, the relative mark size of the mark is detected. At S18, each mark is used. The electron beam is irradiated with the marked mark to detect the relative body size of each electron beam of the marked mark. --------!-Install · I (Please read the note on the back first Please fill in this page for matters) Order: _m · This paper size applies to China National Standard (CNS) Al Specification (210 X 297 mm) 498417 8276pif .doc / 009 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of Invention (position. At S20, according to $ 14, S16 and The position of the mark detected in S18, the size of the mark and the irradiation position of the electron beam are used to calculate the correction beam of the electron beam. In S22, the correction position calculated in S20 is used to correct the irradiation positions of the plurality of electron beams to irradiate the corresponding marks of the plurality of electron beams. At S24 ', the irradiation position of the electron beam irradiated at S22 is detected. In S26, it is determined whether or not the calculated correction value is correct according to the irradiation position of the electron beam detected in S24 and the detected position of the mark. If it is judged that the correction 値 is incorrect or inappropriate, return to S12 'and repeat the same process. If it is judged that the correction value 正确 is correct and appropriate, go to S28 ° at S28, and use the correction value 的 determined to be correct and appropriate to perform a predetermined number of exposure processes. At S30 ', it is judged whether all the desired exposure processes have been completed. If it is determined that all the exposure processes have not been completed, the process returns to S12 'to repeat the same process. If it is determined that all the exposure processing is completed, the process proceeds to S32. At S32, the end of this flowchart. In the description of the above flowchart, the detection of the irradiation position of the electron beam (S18) is performed after the detection of the mark position (S14) and the detection of the mark size (S16). After the irradiation position is detected (S18), a mark position detection (S14) and a mark size detection (S16) are performed. In addition, when it is judged that the correction 値 is incorrect and inappropriate at S26, and when it is judged that all exposure processing 尙 is not completed at S30, the stage position correction is performed again (S12), or the stage position correction may not be performed ( S12), and repeat the mark detection (S14) and below. 3A and 3B show an example of the arrangement of the electron beam 104 and an example of a reference wafer 45 having a plurality of marks 47 and 45 arranged thereon. Figure 3A Table 17 ^ The paper size is applicable to China National Standard (CNS) A 丨 Specifications (21〇X 297 meals) ---------- · -Packing—— (Please read the precautions on the back before filling This page) Order., 498417 8276pif.doc / 009 Λ7 β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. The description of the invention (li) shows that there are 69 substrates 106 with electronic 铳 104. FIG. 3B shows a reference wafer 45 having 69 marks 47. Each electron beam 104 arranged on the base material 106 and each mark 47 provided on a reference wafer 45 are provided at corresponding positions. Therefore, it is preferable that the interval between the irradiation positions of the electron beams irradiated by each of the electron beams 104 and the plurality of marks 47 provided on the reference wafer 45 is substantially equal. 4A, B, C, and D show that at the stage position correction (S12), the mark position detection (S14) and the mark size detection (S16), and the electron beam generating unit 10 and Positional relationship of the reference wafer (wafe〇45. Initially, the laser interferometer 50 shown in FIG. 4A is used to correct the position of the stage of the wafer stage 46 of the reference wafer A laser interferometer 50 irradiates a mirror 55 provided on a wafer stage 46 with a plurality of lasers, and then receives reflected light from the plurality of lasers in accordance with the irradiation. The laser and reflected light detect the position and tilt of the wafer stage 46 and the tilt and bend of the mirror 55. The integrated control unit 130 calculates the stage position of the wafer stage 46 to be corrected. After the correction stage of the wafer is adjusted, the wafer stage 46 is controlled based on the correction stage. After the stage stage of the wafer stage 46 is corrected, the relative target of the mark (mark) is detected ( mark) 's location Dimensions. First, move the specified (mai * k) 47 to the irradiation position of the predetermined electron 铳 104 to determine the reference electron 铳 104 and the mark 47. In this embodiment, the lowermost center Photograph of electronic 铳 104 18 This paper size applies to Chinese National Standard (CNS) A 丨 specifications (210 X 297 public love) " · (Please read the unintentional matter on the back before filling in this page) Pack ·% · 498417 82 7 6pif .doc / 009 Λ7 B7 V. Description of the invention ((b) (Please read the precautions on the back before filling out this page) The irradiation position is the reference irradiation position, and the mark (47) at the top center is the reference mark ( mark). The electron beam 104 at the lowermost center is the reference irradiation position, and the mark 47 at the uppermost center is the reference mark, which is to move the wafer stage 46. As shown in FIG. 4A, FIG. 4B, FIG. 4C, and FIG. 4D, the wafer stage 46 is moved so that the electron beam of electron 104 in the lowermost center is irradiated with all the marks ) 47, to detect and irradiate the electron beam 104 in the lowermost center The relative mark position of all the marks of the position. Furthermore, the relative mark positions of the other marks of the reference mark are detected, and the marks of the reference mark are detected. Relative dimensions of other marks. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figures 5A, B, C, and D show the positional relationship between the detection at the irradiation position (S18), the electron beam generator 10, and the reference wafer 45. As shown in FIG. 5A, FIG. 5B, FIG. 5C, and FIG. 5D, the wafer stage 46 is moved, and all the electron beams are used to irradiate the mark 47 at the uppermost central portion of the reference mark with The irradiation positions of all the electron beams 104 on the reference mark are detected. Then, the irradiation positions of other electron beams to the reference irradiation position are detected. Then, the integrated control unit 13 calculates the correction of the irradiation positions of all the electron beams based on the relative positions of the other marks of the reference mark and the relative irradiation positions of the other electron beams at the reference irradiation position. value. FIG. 6 shows the positional relationship between the detection position (S24), the electron beam generating unit 10, and the reference wafer (wafer) 45. A number of mark 47, 19 This paper size is in accordance with Chinese National Standard (CNS) A · 丨 Complete (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 498417 8276pif.doc / 009 ^ _____B7_ 5 Description of the invention (νη) is provided in a plurality of electron beams 104, each corresponding to a position, and is used by the integrated control unit 130 to calculate a compensation beam and correct the irradiation positions of all electron beams so as to irradiate each electron beam generated from the electron beams 104 The corresponding mark. Then, the irradiation position of the electron beam which irradiates each mark is detected. According to the irradiation position of each detected electron beam, and the detection position of the mark 47 detected at the mark position (S14). It is advisable to repeat the above-mentioned photo-processing process every time a predetermined number of exposure processes are performed. As described above, according to the present invention, the correction can be determined by detecting the relative mark positions of the other marks of the reference mark and detecting the irradiation positions of other electron beams at the reference irradiation position. Correction of the irradiation position of all electron beams. Therefore, with all marks and all electron beams, it is possible to detect the irradiation position of the electron beam again in a short time without moving the wafer stage. In addition, a plurality of marks can be detected by one electron beam to detect the relative positions and sizes of the marks. As mentioned above, although the present invention has been described using the embodiments, the technical scope of the present invention is not limited to the range described in the above embodiments, and the above embodiments can be modified or improved in various ways. It can be seen from the description of the scope of patent application that such modified and improved forms are included in the technical scope of the present invention. It is clear from the above description that the present invention provides an electron beam correction method and an electron beam exposure device for correcting the irradiation positions of a plurality of electron beams with a plurality of marks. 20 This paper & degree applies to Chinese National Standard (CNS) A · 丨 Specifications (210 X 297 mm) < Please read the notes on the back before filling this page)