TW494265B - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

Info

Publication number
TW494265B
TW494265B TW86108024A TW86108024A TW494265B TW 494265 B TW494265 B TW 494265B TW 86108024 A TW86108024 A TW 86108024A TW 86108024 A TW86108024 A TW 86108024A TW 494265 B TW494265 B TW 494265B
Authority
TW
Taiwan
Prior art keywords
liquid crystal
electrode
display device
common electrode
substrate
Prior art date
Application number
TW86108024A
Other languages
Chinese (zh)
Inventor
Naoto Hirota
Original Assignee
Oobayashi Seiko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16663362&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW494265(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Oobayashi Seiko Kk filed Critical Oobayashi Seiko Kk
Application granted granted Critical
Publication of TW494265B publication Critical patent/TW494265B/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134363Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]

Landscapes

  • Physics & Mathematics (AREA)
  • Liquid Crystal (AREA)
  • Nonlinear Science (AREA)
  • Geometry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

The present invention relates to a liquid crystal display device, which is to form the scanning signal lines, the image signal layouts, the pixel electrodes, the common electrodes and the active components on the glass substrate respectively, and driving the liquid crystal molecules by the electric field in the direction almost parallel to the surface of the glass substrate. The present invention is characterized that: the scanning signal lines, the image signal layouts, the pixel electrodes, the common electrodes are isolated by the insulation film respectively and located on different layers, wherein a part of the scanning signal lines and the pixel electrodes, and a part of the common electrodes and the pixel electrodes, to respectively form the compensation capacitors by overlapping the insulation films.

Description

經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(,) 本發明係關於一種液晶顯示裝置,尤指一種適用於橫 電界方式的主動式矩陣型液晶顯示裝置,其可有效提高製 造良率,實現殘像少、寬視角及高品質畫像之目的。 習用的主動式矩陣型液晶顯示裝置係於一方基板上形 成梳子狀電極對液晶組成物層印加電界,如日本專利特開 平7-36058號及特開平7- 1 59786號案均爲此種方法,而使 主要電界方向與基板界面大約爲平行方向之顯示方式稱爲 橫電界方式,如第一圖及第二圖所示,即前述之橫電界方 式液晶顯示裝置,其主要係於一玻璃基板(1 〇 )表面分 設有掃猫fe號線(1 )、共通電極(3),於其二者上層 設有絕緣膜(5 ),絕緣膜(5 )上分設有影像信號配線 (2)、半導體層(T)及液晶驅動電極(4),前述三 者上方又覆設有一絕緣膜(6),該絕緣膜(6)依序設 有T F T側配向膜(7 )、液晶分子(9 )、對向基板側 配向膜(8 )、對向玻璃基板(1 1 )及對向基板側偏光 板(1 2 )等。 其中前述共通電極(3 )與液晶驅動電極(4)係分 設在不同層上,但呈直線狀平行的梳子狀配置,又掃瞄信 號線(1 )與影像信號配線(2 )亦呈直線狀平行的梳子 狀配置。 又共通電極(3)與影像信號配線(2)被設成不重 疊,再共通電極(3 )與液晶驅動電極(4 )則介於絕緣 膜(5 )形成補償電容。 另佔畫素面積將近一半的共通電極(3 )及液晶驅動 3 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ----------- (請先閲讀背面之注意事項再填寫本頁) 、? Ϊ 494265 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(j) 電極(4)的表面包覆有防止短路之自我氧化膜或自我氮 化膜。 就前述之橫電界方式液晶顯示裝置而言,因掃瞄信號 線(1 )與共通電極(3 )形成在同一層上,造成二者短 路之機率相當高,同樣的,由於影像信號配線(2 )與液 晶驅動電極(4 )亦形成於同一層上,故亦存在容易造成 短路的問題。當掃瞄信號線(1 )與共通電極(3)短路 時,將造成水平線缺陷;又影像信號配線(2 )與液晶驅 動電極(4 )短路時,則將造成點缺陷,而明顯降低畫像 品質,因此在製造上難以提升其良率,並將提高生產成本 〇 又於橫電界方式上,如不形成補償電容,因液晶驅動 電極(4 )之容量非常小,T F T薄膜電晶體的漏電電流 漏電之不均一性將造成整個畫面的不均一性,而容易看到 畫面的不均勻現象,因此,在習用技術中,將共通電極( 3 )與液晶驅動電極(4 )經由絕緣膜(5 )成形在不同 層上,惟仍使其相互重疊,但如欲形成較大的補償電容時 ,則只有縮小有效畫面以擴大重疊部分的面積,而因此造 成了透光率不佳的主要原因。 再如第二圖所示,該共通電極(3 )與液晶驅動電極 (4 )呈直線狀平行排列的梳子狀配置,即如前述之橫電 界方式,就橫電界方式而言,預傾角(Pre-tilt angle)的變 化,將使液晶顯示裝置之視角大幅變化爲習知技藝,因此 在橫電界方式上,爲了得到理想的視角特性,必須採用預 4 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ---------•裝-- (請先閱讀背面之注意事項再填寫本頁) 訂 494265 A7 B7 五、發明説明(3 ) 傾角非常小的配向膜與液晶,實驗如第廿四圖A所示,橫 電界方式之配向膜預傾角被期望在1度以下(如圖中所示 者爲〇·8度)。 然而,目前亦被用於大量生產之縱電界方式,所採用 配向膜與液晶的預傾角係在3〜8度之間(如第廿四圖B 所示之期望値爲3·3度)。 而在縱電界方式中,如使用預傾角爲1度的配向膜與 液晶,將因影像信號線和畫素電極的影響,產生反傾角區 域(Reverse tilt domain),此種反傾角區域將使液晶顯示 裝置之畫像品質明顯降低。 由上述可知,縱電界方式的液晶顯示裝置和橫電界方 式的液晶顯示裝置很難使用同一種預傾角之配向膜與液晶 ,因此,在以同一套製造設備分別生產橫電界方式及縱電 界方式之液晶顯示裝置時,即必須更換不同的配向膜與液 晶,而嚴重影響生產效率。Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (,) The present invention relates to a liquid crystal display device, especially an active matrix liquid crystal display device suitable for the horizontal electric field method, which can effectively improve manufacturing Yield, to achieve the purpose of fewer afterimages, wide viewing angles and high-quality portraits. The conventional active matrix liquid crystal display device is formed by comb-shaped electrodes on one substrate to form a liquid crystal composition layer on the substrate. For example, Japanese Patent Laid-Open No. 7-36058 and Japanese Patent Laid-Open No. 7-1 59786 both use this method. The display mode in which the main electrical interface direction and the substrate interface are approximately parallel is called the horizontal electrical interface mode, as shown in the first and second figures, that is, the aforementioned liquid crystal display device of the horizontal electrical interface mode is mainly based on a glass substrate ( 1 〇) The surface is provided with a cat fe line (1) and a common electrode (3). An insulating film (5) is provided on the upper layer of the two, and an image signal wiring (2) is provided on the insulating film (5). , A semiconductor layer (T) and a liquid crystal driving electrode (4), and an insulating film (6) is provided on the three above, and the insulating film (6) is sequentially provided with a TFT-side alignment film (7) and liquid crystal molecules (9) ), A counter substrate-side alignment film (8), a counter glass substrate (1 1), a counter substrate-side polarizing plate (1 2), and the like. The aforementioned common electrode (3) and the liquid crystal driving electrode (4) are arranged on different layers, but are arranged in a straight and parallel comb shape, and the scanning signal line (1) and the image signal wiring (2) are also straight. Comb-like arrangement. The common electrode (3) and the video signal wiring (2) are not overlapped, and the common electrode (3) and the liquid crystal drive electrode (4) are interposed between the insulating film (5) to form a compensation capacitor. Another common electrode (3) and LCD driver which occupy nearly half of the pixel area. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) ----------- (Please read the back first (Notes on this page, please fill in this page), Ϊ 494265 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (j) The surface of the electrode (4) is covered with a self-oxidizing film or self-nitriding to prevent short circuit. membrane. As for the liquid crystal display device of the transverse electric boundary type mentioned above, since the scanning signal line (1) and the common electrode (3) are formed on the same layer, the probability of short circuit between the two is quite high. Similarly, the image signal wiring (2 ) And the liquid crystal driving electrode (4) are also formed on the same layer, so there is also a problem that it is easy to cause a short circuit. When the scanning signal line (1) and the common electrode (3) are short-circuited, a horizontal line defect will be caused; and when the image signal wiring (2) and the liquid crystal drive electrode (4) are short-circuited, a point defect will be caused, which will significantly reduce the image quality Therefore, it is difficult to improve its yield in manufacturing, and it will increase the production cost. In the transverse electric boundary method, if no compensation capacitor is formed, the capacity of the liquid crystal drive electrode (4) is very small, and the leakage current of the TFT thin-film transistor is leakage. The non-uniformity will cause the non-uniformity of the entire screen, and it is easy to see the non-uniformity of the screen. Therefore, in the conventional technology, the common electrode (3) and the liquid crystal driving electrode (4) are formed through an insulating film (5). On different layers, they are still overlapped with each other. However, if a large compensation capacitor is to be formed, the effective screen can only be reduced to enlarge the area of the overlapped portion, which causes the main cause of poor light transmittance. As shown in the second figure, the common electrode (3) and the liquid crystal drive electrode (4) are arranged in a comb-like arrangement in a straight line, that is, as described in the transverse electrical boundary method, in terms of the transverse electrical boundary method, the pretilt angle (Pre -tilt angle) will greatly change the viewing angle of the liquid crystal display device into a known technique. Therefore, in order to obtain the ideal viewing angle characteristics in the horizontal electric field method, a pre-paper size of 4 papers is applicable to the Chinese National Standard (CNS). A4 specification (210X297 mm) --------- • Installation-- (Please read the precautions on the back before filling this page) Order 494265 A7 B7 V. Description of the invention (3) Alignment film with very small inclination Experiments with liquid crystals are shown in Figure 24A, and the pretilt angle of the alignment film in the transverse electrical boundary mode is expected to be 1 degree or less (the one shown in the figure is 0.8 degrees). However, it is also currently used for mass production of the longitudinal electrical boundary method. The pretilt angle between the alignment film and the liquid crystal is between 3 and 8 degrees (as shown in Figure 24, the expected value is 3.3 degrees). In the longitudinal electrical boundary method, if an alignment film and liquid crystal having a pretilt angle of 1 degree are used, a reverse tilt domain will be generated due to the influence of the image signal line and the pixel electrode. This reverse tilt region will make the liquid crystal The image quality of the display device is significantly reduced. From the above, it can be known that it is difficult to use the liquid crystal display device of the vertical electric field type and the liquid crystal display device of the horizontal electric field type to use the same pretilt alignment film and liquid crystal. Therefore, the horizontal electric field type and the vertical electric field type are produced by the same manufacturing equipment When a liquid crystal display device is used, different alignment films and liquid crystals must be replaced, which seriously affects production efficiency.

再者,請參閱第廿三圖所示,係前述橫電界方式於畫 素電極內之液晶配向方向圖,其中Q軸爲偏光軸方向,P 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 軸爲液晶分子(9)與畫素電極(3) (4)之相對角度 〇 而如目I[述’該畫素電極(3 )( 4 )內印加上橫電界 時,液晶分子(9 )係在畫素電極(3 )( 4 )內部產生 單一方向的旋轉運動(如圖示箭頭所示),惟由第廿四圖 可明顯看出,單一方向之旋轉運動在預傾角大時,視角特 性將產生偏移,而影響映像品質。 5 本紙張尺度適用中國國家標率(CNS ) A4規格(210X 297公釐) 經濟部中央標準局員工消費合作社印製 494265 A7 __ _ _ B7__ 五、發明説明(V ) 另如前述所述,習用橫電界方式因共通電極(3 )與 液晶驅動電極(4 )佔據了極大的有效畫面,而造成其開 口率低,其即使設計得當,開口率亦不過達5 0 %左右, 其有效面積將近一半爲共通電極(3 )與液晶驅動電極( 4)所佔據,在以往的技術中,由於這些電極的表面並未 形成防止反射的膜,因此,由外界進入而通過彩色濾光片 侵入液晶層的光,將由共通電極(3 )及液晶驅動電極( 4 )表面反射,並再度通過彩色濾光片而射出。在此狀態 下,黑階將移至灰色帶(即黑色調會呈現灰色),因此整 個畫面之黑調將較以往縱電界方式之液晶顯示裝置差。 故本發明主要即爲解決前述各個問題,並期能提高產 品之製造良率,提供更大的開口率、較低價的高對比、大 畫面及高畫質的主動式矩陣型液晶顯示裝置。 而爲解決前述問題,本發明主要目的在提供一種液晶 顯示裝置,其包括有一基板、於基板上所形成之掃瞄信號 線及影像信號配線,於掃瞄信號線及影像信號配線交叉部 上所形成之薄膜電晶體、於薄膜電晶體上所接續的液晶驅 動電極、至少一部分與前述液晶驅動電極呈對向形成共通 電極之主動式矩陣型基板及於該對向基板間夾設之液晶層 所構成; ' 其特徵在於:前述掃瞄信號線、影像信號配線、共通 電極及液晶驅動電極分別透過絕緣膜之形成而分設於不同 層上。 以前述設計因掃瞄信號線、影像信號配線、共通電極 6 本纸張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁)Furthermore, please refer to Figure 23 and Figure 3. This is the liquid crystal alignment pattern of the pixel electrode in the transverse electric field method, where the Q axis is the direction of the polarizing axis, printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please first Read the notes on the back and fill in this page again.) The axis is the relative angle between the liquid crystal molecules (9) and the pixel electrode (3) (4). 0, as shown in the head I. [The 'pixel electrode (3) (4) is printed inside. When it is on the horizontal electric field, the liquid crystal molecules (9) generate a single-direction rotational movement (as shown by the arrow in the figure) inside the pixel electrode (3) (4), but it can be clearly seen from the twenty-fourth figure that the single direction When the pre-tilt angle is large, the viewing angle characteristics will shift, which will affect the image quality. 5 This paper size applies to China's National Standards (CNS) A4 specification (210X 297 mm) Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 494265 A7 __ _ _ B7__ V. Description of the invention (V) As mentioned above, conventional In the horizontal electric field method, the common electrode (3) and the liquid crystal drive electrode (4) occupy a large effective screen, resulting in a low aperture ratio. Even if it is properly designed, the aperture ratio does not reach about 50%, and its effective area is nearly half. It is occupied by the common electrode (3) and the liquid crystal drive electrode (4). In the conventional technology, since no anti-reflection film is formed on the surface of these electrodes, the liquid crystal layer is penetrated by a color filter when it enters from the outside. The light is reflected from the surface of the common electrode (3) and the liquid crystal drive electrode (4), and is emitted through the color filter again. In this state, the black level will move to the gray band (that is, the black tone will appear gray), so the black tone of the entire screen will be inferior to the liquid crystal display device of the previous vertical mode. Therefore, the present invention is mainly to solve the foregoing problems, and to improve the manufacturing yield of the product, and to provide an active matrix liquid crystal display device with a larger aperture ratio, lower price, high contrast, large picture, and high image quality. In order to solve the foregoing problems, a main object of the present invention is to provide a liquid crystal display device, which includes a substrate, a scanning signal line and an image signal wiring formed on the substrate, and a scanning signal line and an image signal wiring crossing portion. The formed thin-film transistor, a liquid crystal driving electrode connected to the thin-film transistor, an active matrix substrate having at least a part opposed to the liquid crystal driving electrode to form a common electrode, and a liquid crystal layer sandwiched between the opposing substrates. Structure; 'It is characterized in that the scanning signal line, the image signal wiring, the common electrode, and the liquid crystal driving electrode are respectively formed on different layers through the formation of an insulating film. Scanning signal lines, image signal wiring, and common electrodes with the aforementioned design 6 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

494265 Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明(r) 及液晶驅動電極分別透過絕緣膜而分別存在於不同層上, 藉此可有效降低掃瞄信號線與共通電極發生短路的機率, 並減少畫面之水平線缺陷;再者,影像信號配線與液晶驅 動電極發生短路之機率亦降低,而可減少畫面之點缺陷。 本發明次一目的在於:前述的影像信號配線與其共通 電極的至少一部分或前述掃瞄信號線與其共通電極的至少 一部份,係透過其間的絕緣膜相互重疊; - 前述的液晶驅動電極、掃瞄信號線及前述共通電極的 至少一部分,係透過其間的絕緣膜相互重疊,其重疊部形 成有補償電容。 以前述設計因共通電極的一部分、影像信號配線、掃 瞄信號線分別透過其間之絕緣膜而相互重疊,藉以放大液 晶顯示裝置之開口率;又液晶驅動電極、掃瞄信號線及共 通電極的至少一部分經由絕緣膜相互重疊所形成之補償電 容可增大,藉此可防止因薄膜電晶體截止阻抗的低下,而 產生畫質不佳現象,且該大的補償電容亦可降低因掃瞄信 號線所產生之液晶驅動電壓變動現象,藉以防止畫面之殘 像產生。 本發明再一目的在於:前述的影像信號配線及畫素電 極(液晶驅動電極間成對向的共通電極之一部分)採用正 誘電率異方性液晶(Ρ型L C )時,其與液晶分子之相對 曲折角度爲±1〜±4 5度之範圍內; 前述的掃瞄信號線及畫素電極採用正誘電率異方性液 晶(Ρ型L C )時,其二者與液晶分子之相對曲折角度爲 7 本紙張尺度適用中國國家標準(CNS ) Α4規格(210 X 297公釐) (請先閲讀背面之注意事 1· 項再填· 裝— :寫本頁) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(么) 土1〜土4 5度之範圍內; 前述影像信號線及畫素電極採用負誘電率異方性液晶 (N型L C )時’其與液晶分子之相對曲折角度爲除9 〇 度以外之4 5〜13 5度之範圍內; 前述掃瞄線及畫素電極採用負誘電率異方性液晶(N 型L C )時,其與液晶分子之相對曲折角度爲除9 〇度以 外之45〜135度之範圍內; - 透過前述設計,於畫素電極內印加橫電界時,液晶分 子在畫素電極內部產生左旋轉及右旋轉兩種旋轉運動,如 此,即使預傾角大,視角特性也不會偏倚。由此可知,本 發明之液晶顯示裝置可以不受預傾角的限制,因此,其配 向膜與液晶的選擇自由度變大,換言之,即易於改善殘像 與應答速度,而以往的配向膜與液晶也可以使用,其生產 效率自然可以提升,偏光板的有效利用率亦可提高,生產 成本可因而降低。 本創作另一目的在於:前述的液晶驅動電極及共通電 極的兩方或至少一方的電極表面形成有光的反射防止膜層 〇 以前述設計,當光由外部進入並通過彩色濾光片,並 侵入液晶層,將因共通電極及液晶驅動電極上層形成有反 谢防止膜而被消除,藉此,黑調可獲得改善,對比亦可提 高,並能得到便於觀看的高品質畫像。 再者,以前述本發明主要目的、次一目的構成之液晶 顯示裝置,因從有效畫素以外的背光燈(BACK LIGHT)的 8 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 寶裝. 訂 經濟部中央標準局員工消費合作社印製 494265 A7 B7 五、發明説明(7 ) 漏光會減少,所以可縮小濾光片的黑光罩(B Μ )領域, 且薄膜電晶體可由共通電極的一部分或液晶驅動電極的一 部分完全覆蓋,因此薄膜電晶體的半導體活性層不會受到 外光的直接照射,故,薄膜電晶體截止的光漏電流可有效 的減少,以往無論如何皆屬必要的濾光片,可變成不必要 ,藉此可縮短彩色濾光片的製造流程,由於可提高良率, 故亦可降低生產成本。 - 爲使貴審查委員進一步瞭解前述目的及本發明之具 體方法特徵,茲附以圖式詳細說明如后: (一)圖式部分: 第一圖:係習用橫電界方式單位畫素之剖面圖。 第二圖:係習用橫電界方式單位畫素之平面圖。 第三圖:係本發明第一實施例的橫電界方式單位畫素之剖面圖。 第四圖:係本發明第一實施例的橫電界方式單位畫素之平面圖。 第五圖:係本發明第一實施例的橫電界方式單位畫素之平面圖。 第六圖:係本發明第二實施例的橫電界方式單位畫素之剖面圖。 第七圖:係本發明第二實施例的橫電界方式單位畫素之平面圖。 第八圖:係本發明第二實施例的橫電界方式單位畫素之平面圖。 第九圖:係本發明第二實施例的橫電界方式單位畫素之平面圖。 第十圖:係本發明第二實施例的橫電界方式單位畫素之平面圖。 第十一圖:係本發明第三實施例的橫電界方式單位畫素之剖面圖。 第十二圖:係本發明第三實施例的橫電界方式單位畫素之平面圖。 第十三圖:係本發明第三實施例的橫電界方式單位畫素之平面圖。 第十四圖:係本發明第四實施例的橫電界方式單位畫素之剖面圖。 9 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) ---------•裝-- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印裝 494265 A7 B7 五、發明説明(犮) 第十五圖··係本發明第四實施例的橫電界方式單位畫素之平面圖。 第十六圖:係本發明第四實施例的橫電界方式單位畫素之平面圖。 第十七圖:係本發明第五實施例的橫電界方式屈曲畫素電極內正的 誘電率異方性液晶之配向方向圖。 第十八圖:係本發明第六實施例的橫電界方式屈曲畫素電極內負的 誘電率異方性液晶之配向方向圖。 第十九圖:係本發明第五、六實施例的橫電界方式單位畫素之平面 圖。 第二十圖:係本發明第五、六實施例的橫電界方式單位畫素之平面 圖。 第廿一圖:係本發明第五、六實施例的橫電界方式單位畫素之平面 圖。 第廿二圖:係本發明第七實施例的橫電界方式附有反射防止膜之畫 素電極之平面圖。 第廿三圖:係本發明第一至四實施例橫電界方式屈曲畫素電極內的 正誘電率異方性液晶的配向方向圖。 第廿四圖:係橫電界方式液晶顯示裝置的液晶分子預傾角與視角特 性圖。 第廿五圖:係本發明第五、六實施例橫電界方式畫素配列的平面圖 Ο 第廿六圖:係本發明第五、六實施例橫電界方式畫素配列的平面圖 〇 第廿七圖:係本發明第五、六實施例橫電界方式畫素配列的平面圖 〇 _ 10 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ----------- (請先閱讀背面之注意事項再填寫本頁)494265 Α7 Β7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. The description of the invention (r) and the liquid crystal drive electrodes exist on different layers through the insulating film, which can effectively reduce the short circuit between the scanning signal line and the common electrode And reduce the horizontal line defects of the screen; moreover, the probability of short circuit between the image signal wiring and the liquid crystal drive electrode is also reduced, which can reduce the point defects of the screen. A second object of the present invention is: at least a part of the video signal wiring and its common electrode or at least a part of the scanning signal line and its common electrode are overlapped with each other through an insulating film therebetween; At least a part of the aiming signal line and the common electrode are overlapped with each other through an insulating film therebetween, and a compensation capacitor is formed in the overlapping portion. In the aforementioned design, a part of the common electrode, the image signal wiring, and the scanning signal line are overlapped with each other through the insulating film therebetween, so as to enlarge the aperture ratio of the liquid crystal display device; and at least the liquid crystal driving electrode, the scanning signal line and the common electrode are at least A part of the compensation capacitor formed by overlapping the insulating film can be increased, thereby preventing poor image quality due to the low cut-off resistance of the thin film transistor, and the large compensation capacitor can also reduce the scanning signal line. The generated liquid crystal driving voltage fluctuation phenomenon can prevent the afterimage of the screen from being generated. Another object of the present invention is: when the aforementioned image signal wiring and pixel electrode (a part of the common electrode opposed between the liquid crystal driving electrodes) adopts positive-attractivity anisotropic liquid crystal (P-type LC), Relative tortuosity angle is within the range of ± 1 to ± 45 degrees; when the aforementioned scanning signal lines and pixel electrodes use positive-attractivity anisotropic liquid crystal (P-type LC), the relative tortuosity angle between the two and the liquid crystal molecules For 7 paper sizes, the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) is applied (please read the notes on the back 1 · Items and then fill in—: write this page) Order the staff of the Central Standards Bureau of the Ministry of Economic Affairs Cooperative printed A7 B7 V. Description of the invention (me) range of soil 1 to soil 45 degrees; when the aforementioned image signal lines and pixel electrodes use negative-attractivity anisotropic liquid crystal (N-type LC), it is related to liquid crystal molecules The relative tortuous angle is in the range of 45 to 135 degrees other than 90 degrees; when the aforementioned scanning lines and pixel electrodes use negative-attractivity anisotropic liquid crystal (N-type LC), the relative to the liquid crystal molecules Zigzag angle is 45 other than 90 degrees In the range of 135 degrees;-Through the aforementioned design, when the horizontal electrode boundary is imprinted in the pixel electrode, the liquid crystal molecules generate two rotational movements, left and right, inside the pixel electrode. Thus, even if the pretilt angle is large, the viewing angle characteristics are not Be biased. From this, it can be seen that the liquid crystal display device of the present invention is not limited by the pretilt angle. Therefore, the degree of freedom in selecting the alignment film and the liquid crystal becomes larger, in other words, it is easy to improve the afterimage and the response speed. It can also be used, and its production efficiency can naturally be improved, the effective utilization rate of the polarizing plate can also be increased, and the production cost can be reduced accordingly. Another purpose of this creation is to form an anti-reflection film layer on the surface of two or at least one of the aforementioned liquid crystal driving electrodes and common electrodes. With the aforementioned design, when light enters from the outside and passes through a color filter, and The intrusion into the liquid crystal layer will be eliminated due to the formation of an anti-Xie film on the upper layer of the common electrode and the liquid crystal drive electrode. As a result, the black tone can be improved, the contrast can be improved, and high-quality images can be easily viewed. In addition, the liquid crystal display device constituted by the main purpose and the second purpose of the present invention is applicable to the Chinese paper standard (CNS) A4 specification (210X 297 mm) from the 8 paper sizes of the backlight (BACK LIGHT) other than the effective pixels. (%) (Please read the notes on the back before filling this page) Baozhuang. Order printed by the Central Consumers Bureau of the Ministry of Economic Affairs printed by the Consumer Cooperative 494265 A7 B7 V. Description of the invention (7) Light leakage will be reduced, so the size of the filter can be reduced. In the black photomask (BM) field, and the thin film transistor can be completely covered by a part of the common electrode or a part of the liquid crystal driving electrode, the semiconductor active layer of the thin film transistor is not directly exposed to external light. Therefore, the thin film transistor is cut off. The light leakage current can be effectively reduced. In the past, any filters that were necessary in the past can be made unnecessary. This can shorten the manufacturing process of color filters. Since the yield can be improved, the production cost can also be reduced. -In order to make your reviewers better understand the foregoing objectives and specific method features of the present invention, detailed drawings are attached as follows: (I) Schematic part: Figure 1: A cross-sectional view of a unit pixel of the conventional horizontal electrical boundary method . The second picture is a plan view of a unit pixel of the conventional horizontal electric field method. FIG. 3 is a cross-sectional view of a unit pixel of a horizontal electric boundary mode according to the first embodiment of the present invention. FIG. 4 is a plan view of a unit pixel of a transverse electric boundary mode according to the first embodiment of the present invention. Fifth Figure: A plan view of a unit pixel of a horizontal electric boundary mode according to the first embodiment of the present invention. FIG. 6 is a cross-sectional view of a horizontal pixel-type unit pixel of the second embodiment of the present invention. FIG. 7 is a plan view of a horizontal pixel unit pixel in the second embodiment of the present invention. FIG. 8 is a plan view of a horizontal pixel unit pixel in the second embodiment of the present invention. The ninth figure is a plan view of a unit pixel of a transverse electric boundary mode according to a second embodiment of the present invention. Tenth figure: a plan view of a unit pixel of a horizontal electric boundary mode according to the second embodiment of the present invention. FIG. 11 is a cross-sectional view of a horizontal pixel unit pixel in a third embodiment of the present invention. FIG. 12 is a plan view of a horizontal pixel unit pixel in a third embodiment of the present invention. Thirteenth figure: A plan view of a unit pixel of a horizontal electric boundary mode according to a third embodiment of the present invention. Fourteenth figure: A cross-sectional view of a horizontal pixel unit pixel in a fourth embodiment of the present invention. 9 This paper size applies to China National Standard (CNS) Α4 specification (210X297 mm) --------- • Installation-- (Please read the notes on the back before filling this page) Order the Central Bureau of Standards of the Ministry of Economic Affairs Printed by employee consumer cooperatives 494265 A7 B7 V. Description of the invention (犮) Figure 15: This is a plan view of a unit pixel of a horizontal electric system in the fourth embodiment of the present invention. Fig. 16 is a plan view of a unit pixel of a horizontal electric boundary mode according to a fourth embodiment of the present invention. Fig. 17 is an alignment pattern diagram of a positively induced anisotropic liquid crystal in a transverse electric boundary mode buckling pixel electrode according to a fifth embodiment of the present invention. Fig. 18 is an alignment pattern diagram of the negatively induced liquid crystal anisotropic liquid crystal in the transverse electric boundary mode buckling pixel electrode of the sixth embodiment of the present invention. Fig. 19 is a plan view of a unit pixel of a horizontal electric boundary mode according to the fifth and sixth embodiments of the present invention. Fig. 20 is a plan view of a unit pixel of a horizontal electric boundary mode according to the fifth and sixth embodiments of the present invention. Fig. 21 is a plan view of a unit pixel of a horizontal electric boundary mode according to the fifth and sixth embodiments of the present invention. Fig. 22 is a plan view of a pixel electrode with an anti-reflection film in a transverse electrical system according to a seventh embodiment of the present invention. Fig. 23 is an alignment pattern diagram of the positive-attractivity anisotropic liquid crystal in the buckled pixel electrode in the transverse electric field method of the first to fourth embodiments of the present invention. Fig. 24 is a graph showing the pretilt angle and viewing angle characteristics of liquid crystal molecules of a liquid crystal display device of transverse electric boundary type. Figure 25: A plan view of a pixel arrangement in the horizontal electric field method of the fifth and sixth embodiments of the present invention. Figure 26: A plan view of a pixel arrangement of the horizontal electric field method in the fifth and sixth embodiments of the present invention. : It is a plan view of the arrangement of pixels in the horizontal and electrical circles according to the fifth and sixth embodiments of the present invention. 0_10 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ----------- ( (Please read the notes on the back before filling out this page)

、1T 經濟部中央標準局員工消費合作社印製 494265 A7 B7 五、發明説明(/ ) 第廿八圖:係本發明第五、六實施例橫電界方式畫素配列的平面圖 〇 第廿九圖:係本發明第五、六實施例橫電界方式畫素配列的平面圖 〇 第三十圖:係本發明第五、六實施例橫電界方式畫素配列的平面圖 〇 第卅一圖:係本發明第一實施例共通電極與影像信號配線的重疊部 剖面圖。 第卅二圖:係本發明第四實施例共通電極與影像信號配線的重疊部 剖面圖。 第卅三圖:係本發明第四實施例共通電極與液晶驅動電極與掃瞄信 號線的重疊部剖面圖。 第卅四圖:係本發明第四實施例共通電極與液晶驅動電極與掃瞄信 號線的重疊部剖面圖。 第卅五圖:係本發明第一實施例共通電極與液晶驅動電極與掃瞄信 號線的重疊部剖面圖。 第卅六圖:係本發明第一實施例共通電極與液晶驅動電極與掃瞄信 號線的重疊部剖面圖。 第卅七圖:係本發明第一實施例由掃瞄信號線與液晶驅動電極所夾 設的電晶體部的能動層之剖面圖。 第卅八圖:係本發明第一實施例橫電界方式畫素配列的平面圖。 第卅九圖:係本發明第四實施例由掃瞄信號線與液晶驅動電極所夾 設的電晶體部的能動層之剖面圖。 第四十圖:係本發明第四實施例橫電界方式單位畫素的平面圖。 11 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 一裝-Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, 1T 494265 A7 B7 V. Description of the invention (/) Figure 28: Plan view of the arrangement of pixels in the horizontal electric field method of the fifth and sixth embodiments of the present invention. Figure 29: It is a plan view of a pixel arrangement of the horizontal electric field method of the fifth and sixth embodiments of the present invention. Figure 30: A plan view of a pixel arrangement of the horizontal electric field method of the fifth and sixth embodiments of the present invention. A cross-sectional view of an overlapping portion of a common electrode and an image signal wiring according to an embodiment. Fig. 22 is a cross-sectional view of an overlapping portion of a common electrode and a video signal wiring according to a fourth embodiment of the present invention. FIG. 23 is a cross-sectional view of an overlapping portion of a common electrode, a liquid crystal driving electrode, and a scanning signal line according to the fourth embodiment of the present invention. FIG. 24 is a cross-sectional view of an overlapping portion of a common electrode, a liquid crystal driving electrode, and a scanning signal line according to a fourth embodiment of the present invention. Fig. 25 is a cross-sectional view of an overlapping portion of a common electrode, a liquid crystal driving electrode, and a scanning signal line according to the first embodiment of the present invention. FIG. 26 is a cross-sectional view of an overlapping portion of a common electrode, a liquid crystal driving electrode, and a scanning signal line according to the first embodiment of the present invention. Figure 27 is a cross-sectional view of an active layer of a transistor portion interposed between a scanning signal line and a liquid crystal driving electrode according to the first embodiment of the present invention. FIG. 28 is a plan view of a pixel arrangement in a horizontal electric field mode according to the first embodiment of the present invention. Figure 29 is a cross-sectional view of an active layer of a transistor portion interposed between a scanning signal line and a liquid crystal driving electrode according to a fourth embodiment of the present invention. FIG. 40 is a plan view of a unit pixel in a horizontal electric field mode according to a fourth embodiment of the present invention. 11 This paper size applies to Chinese National Standard (CNS) A4 (210X 297mm) (Please read the precautions on the back before filling this page)

、1T 494265 五 A7 B7_、發明説明(,° ) 第四一圖:係本發明第四實施例由掃瞄信號線與共通電極所夾設的 電晶體部的能動層之剖面圖。 第四二圖:係本發明第四實施例橫電界方式的平面圖。 第四三圖:係本發明第四實施例橫電界方式的剖面圖。 第四四圖:係本發明第四實施例橫電界方式的平面圖。 第四五圖:係本發明第七實施例橫電界方式附有反射防止膜的畫素 電極的剖面圖。 (二)圖號部分: (1 )掃瞄信號線 (3 )共通電極 (5 ) ( 6 )絕緣膜 (9 )液晶分子 (1 1 )對向基板 (1 4 )下層絕緣膜 (16)保持容量形成區域 (1 8 )共通電極中央線 (2 0 )畫素電極 (2 2 )反射防止層 (請先閲讀背面之注意事項再填寫本頁) I裝. 經濟部中央標準局員工消費合作社印製 (2)影像信號配線 (4)液晶驅動電極 (7 ) ( 8 )配向膜 (1 0 )玻璃基板 (1 2 ) ( 1 3 )偏光板 (1 5 )穿孔 (17)陽極氧化膜 (1 9 )穿孔 (2 1 )上層絕緣膜 (2 3 )液晶分子 (3 - F )與共通電極相同材料,且同時形成之光遮蔽膜 (A) P型液晶配向方向與畫素電極的交叉角度 (B) P型液晶配向方向與畫素電極的交叉角度 (P )液晶分子配向方向與偏光板的偏光軸(光學軸)方向 (Q )偏;7t板之偏光軸(光學軸)方向 (D )與影像信號配線同時形成之電晶體集極電極 12 本紙張尺度適用中國國家標準(.CNS ) A4規格(21〇X297公釐)1T 494265 5 A7 B7_, description of the invention (, °) 41st figure: is a cross-sectional view of the active layer of a transistor portion sandwiched by a scanning signal line and a common electrode in the fourth embodiment of the present invention. Forty-second Figure: A plan view of a transverse electrical boundary mode according to a fourth embodiment of the present invention. Fig. 43 is a cross-sectional view of a transverse electrical boundary system according to a fourth embodiment of the present invention. Forty-fourth figure: is a plan view of a transverse electrical boundary mode according to a fourth embodiment of the present invention. Fig. 45 is a cross-sectional view of a pixel electrode with an anti-reflection film in a transverse electric field method according to a seventh embodiment of the present invention. (2) Part of drawing number: (1) Scanning signal line (3) Common electrode (5) (6) Insulating film (9) Liquid crystal molecules (1 1) Opposite substrate (1 4) Lower insulating film (16) holds Capacitor formation area (1 8) Common electrode center line (2 0) Pixel electrode (2 2) Anti-reflection layer (Please read the precautions on the back before filling out this page) I. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (2) Video signal wiring (4) Liquid crystal drive electrodes (7) (8) Alignment film (1 0) Glass substrate (1 2) (1 3) Polarizing plate (1 5) Perforation (17) Anodized film (1 9) Perforation (2 1) Upper insulating film (2 3) Liquid crystal molecules (3-F) The same material as the common electrode, and a light shielding film (A) formed at the same time The cross angle between the alignment direction of the P-type liquid crystal and the pixel electrode ( B) Crossing angle of P-type liquid crystal alignment direction and pixel electrode (P) The alignment direction of liquid crystal molecules is deviated from the polarization axis (optical axis) direction (Q) of the polarizing plate; the polarization axis (optical axis) direction (D) of the 7t plate Transistor collector electrode formed at the same time as the image signal wiring 12 This paper size applies to China National Standard (.CNS) A4 specification (21 × 297 mm)

、1T 494265 Μ Β7 五、發明説明(丨丨) (丁)半導體層 (w )開窗 如第三至五圖、第卅一圖、第卅五至卅八圖所示,係 本發明第一較佳實施例之單位畫素剖面及平面圖.,其主要 係於一玻璃基板(10)上設有共通電極(3),又覆設 形成有一下層絕緣膜(1 4 ),該絕緣膜(1 4 )係由氮 化矽(SiN )或氧化矽(Si02 )構成,又於絕緣膜(1 4 )上形成有掃瞄信號線(1 ) ( GATE電極),該掃瞄 信號線(1 )係由鋁(A1)等可作陽極氧化處理的金屬爲佳 ,除此以外,如絡、鉬、鈦、鎢及鉅等金屬或合金均可, 又低電氣阻抗之金屬,二層,三層重疊的複合金屬亦可。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 再掃瞄信號線(1 )上又覆設形成有閘極(gate)絕 緣膜(5 ),隨後於絕緣膜(5 )形成非晶質矽膜(τ ) (a-Si)作爲電晶體之能動層,又絕緣膜(5 )上形成有影 像信號配線(2 )及集極電極(D ),其中影像信號配線 .(2 )及集極電極(D)分別與非晶質矽膜(T)之一部 分重疊,再於其上形成絕緣膜(6),以完全覆蓋前述絕 緣膜(5 )、影像信號配線(2 )、集極電極(D )非晶 質矽膜(T ) 〇 接著於絕緣膜(6 )對應於集極電極(D)處形成有 穿孔(1 5 ),並令形成於絕緣膜(6 )上之液晶驅動電 極(4)經穿孔(1 5)與集極電極(D)構成電氣連接 〇 再於前述構造所組成單位畫素呈矩陣狀配置的主動式 矩陣型基板表面設有一配向膜(7),該配向膜(7)係 13 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 494265 A7 B7 五、發明説明(〖>) 由?1(?01^-:^10£)所構成,其表面實施有配向處理( RUBBING ),又配向膜(7)表面形成有另一配向膜( 8),該配向膜(8)表面亦實施有配向處理’又兩配向 膜(7 ) ( 8 )間封入有棒狀之液晶分子(9 )’再配向 膜(8 )表面設有一相對於基板(1 〇 )之對向基板(1 1 ),該兩基板(1 0 ) ( 1 1 )之相對外側表面分設配 置有偏光板(12)(13)。 前述配向膜(7 ) ( 8 )實施有配向處理,但亦可不 實施配向處理,用直線偏光光線使光重合型耐熱型局分子 起光重合反應,使具有液晶配向性的膜也可於以光重合型 耐熱性高分子配向膜爲配向時,預傾角不容易發生,在橫 電界方式的液晶顯示模式中,預傾角愈小,視角特性愈佳 ,因此在橫電界方式顯示模式中,亦可使用光重合型耐熱 性高分子配向膜。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 又液晶分子(9 )無電界時,如第廿三圖所示,相對 於直條狀的液晶驅動電極(4 )及共通電極的長邊方向持 有若干角度(1至4 5度)之配向,又,與上下基板的界 面部的液晶分子(9 )之配向互相平行,當液晶分子(9 )的誘電率異方性爲正,使用負的誘電率異方性之液晶分 子(9 )時,液晶分子(9 )配向方向之軸(P)與畫素 電極(4)(3)的交叉角度設定在45〜89度之間即 可。 又於前述之第一實施例中,如第三圖所示之共通電極 (3)與液晶驅動電極(4)係透過絕緣膜(14) (5 14 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 494265 經濟部中央標準局員工消費合作社印製 A7 B7 _ 五、發明説明(U ) )(6 )予以絕緣隔離,因此如第四圖所示,共通電極( 3 )與液晶驅動電極(4 )可以上下重疊,該重疊部分即 可用於形成補償電容。又如第五圖所示,液晶驅動電極( 4 )不可與共通電極(3 )重疊,亦可與掃瞄信號線(1 )重疊,因此,可以在不降低開口率的前提下,大大提高 補償電容。再如第卅七、卅八圖所示,該液晶驅動電極( 4 )可以將薄膜電晶體T F T的非晶質矽能動層(T )完 全覆蓋,又如第卅一、卅五、卅六圖所示,令共通電極( 3 )的一部分與掃瞄信號線(1 )或影像信號配線(2 ) 重疊,可以大幅減少從有效畫素以外所漏出來的光。 又如第六至十圖所示,爲本發明第二較佳實施例,其 主要係於一玻璃基板(10)上先形成掃瞄信號線(1) ,又於掃瞄信號線(1 )上進行陽極氧化處理,而覆蓋形 成陽極氧化膜(17),該陽極氧化膜(17)可由鋁、 鈦、鈮等金屬或其合金處理,另積層構造的閘極電極亦可 〇 又完成陽極氧化膜(1 7 )後,仍於玻璃基板(1 0 )上形成共通電極(3),隨後於前述構造上形成完全覆 蓋的絕緣膜(5),該絕緣膜(5)以上之多層實施構造 與第一實施例相同。 而於本實施例中,由於陽極氧化膜(1 7 )可將掃猫 信號線(1 )與共通電極(3)完全隔離,因此可確實防 止掃瞄信號線(1 )與共通電極(3)構成短路。又利用 前述方法運用於第一實施例,將共通電極(3 )的一部分 15 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ---------·裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 丨· "^65 Α7 Β7 五、發明説明(/f ) 與影像信號配線(2 )重疊亦可達成相同效果,又用於液 晶驅動電極(4 )的一部分完全覆蓋薄膜電晶體的能動層 (T )亦可。 再如第十一至十三圖所示,其分別爲本發明第三較佳 實施例單位畫素的剖面及平面圖,主要係令掃瞄信號線( 1 )與共通電極中央線(1 8 )同時形成在玻璃基板(1 0 )表面的同一層上,並分別進行陽極氧化處理,於其上 形成陽極氧化膜(1 7)予以隔離,該陽極氧化膜(1 7 )之構成材料與前一實施例相同;又共通電極中央線(1 8)於其陽極氧化膜(1 7)上形成有畫素電極(2 0) ’該畫素電極(2 0)經由陽極氧化膜(1 7)上形成之 穿孔與共通電極中央線(1 8 )構成電氣連接。隨後於前 述構造上形成完全覆蓋的絕緣膜(5 ),該絕緣膜(5 ) 以上之多層實施構造.與第一實施例相同。 於前述實施例中,掃瞄信號線(1 )上之陽極氧化膜 (1 7)可使該掃瞄信號線(1 )與共通電極之一部分的 .畫素電極(20)完全絕緣隔離,又掃瞄信號線與共通電 極中央線(1 8) —般都有相當的距離,即使形成在同一 層也幾乎不會發生短路現象。以前述方法運用於第一實施 ’例’可將共通電極(3)畫素電極(20)的一部分與影 像信號配線(2 )重疊,亦可用以將液晶驅動電極(4 ) 的一部分完全覆蓋薄膜電晶體的能動層(T)。 再如第十四至十六圖、第卅二至卅四圖、第卅九至四 四圖所示,爲本發明第四實施例單位畫素的剖面及平面圖 16 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇χ297公釐) (請先閱讀背面之注意事項再填寫本頁) _裝· 經濟部中央標準局員工消費合作社印製 494265 A7 B7 _ 五、發明説明(λΓ) ,該玻璃基板(1 0 )於其上形成掃瞄信號線(1 )(閘 極電極),及覆蓋該掃瞄信號線(1 )之絕緣膜(5 )後 ,即於絕緣膜(5 )上形成非晶質矽膜構成之電晶體能動 層(Τ ),隨後形成與該能動層(Τ )部分接觸之影像信 號配線(2 )及集極電極(D)及覆蓋前述各構造之絕緣 膜(6),接著,於絕緣膜(6)上對應於該集極電極( D )處形成有穿孔(1 5 )及液晶驅動電極(4 ),該液 晶驅動電極(4 )即經由穿孔(1 5 )與集極電極(D ) 接觸並構成電氣連接,隨後再形成上層絕緣膜(2 1 )將 前述各者完全覆蓋。 再於前述構造所組成單位畫素呈矩陣狀配置的主動式 矩陣型基板表面設有一配向膜(7),該配向膜(7)係 由Ρ I (POLY-IMIDE)所構成,其表面實施有配向處理( RUBBING ),又配向膜(7 )表面形成有另一配向膜( .8),該配向膜(8)表面亦實施有配向處理,又配向膜 (8)表面設有一相對於基板(1 0)之對向基板(1 1 ),該兩基板(1 0 )( 1 1 )之相對外側表面分設配置 有偏光板(12) (13)。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 以前述第四實施例,如第十四圖所示,其因共通電極 (3 )與液晶驅動電極(4 )藉由絕緣膜(2 1 )相互絕 緣隔離,所以如第十五圖所示,其二者可以相互重疊’該 重疊部分並可供形成補償電容。更如第十六圖所示’該液 晶驅動電極(4 )不僅可與共通電極(3 )重疊’亦可與 掃瞄信號線(1 )重疊。因此,可以在不降低開口率的前 17 本紙張又度適用中國國家標準(CNS ) A4規格(210 X 297公釐) 494265 A7 B7 五、發明説明(名) 提下,大大提高補償電容。再如第卅九至四二圖所示,該 液晶驅動電極(4 )或共通電極(3 )可以將薄膜電晶體 TFT的非晶質矽能動層(T)完全覆蓋,又如第卅二至 卅四圖所示,令共通電極(3 )的一部分與掃瞄信號線( 1 )或影像信號配線(2 )重疊,可以大幅減少從有效畫 素以外所漏出來的光。因此可不須使用黑光罩的彩色濾光 片。 再如第四三、四四圖所示,本實施例中可以除去有效 畫素內液晶驅動電極(4 )表面所形成之上層絕緣膜(2 1 ),而形成有開窗(W ) (OPEN WINDOW)。因此,液 晶驅動電極(4)及共通電極(3)表面可直接形成配向 膜(7 )。由於液晶基本上是由交流電驅動,如果被印加 上直流成分之柵極偏壓(BIAS VOLTAGE)時,會有配向膜 (7)的分極、且配向膜(7)與絕緣膜(21)之界面 出現電荷捕捉(CHARGE TRAP)現象,而於畫面上出現殘 像,於本實施例中,兩方的電極直接接觸到配向膜(7) 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) .時,電荷捕捉(CHARGE TRAP)現象會減少,而不易發生 殘像。而於前述第一、二、三實施例亦可形成如第四三、 四四圖所示般之開窗(W)。 另如第十七圖、第十九至廿一圖、第廿五至三十圖所 •示,爲本發明第五實施例之平面圖及動作原理,如該液晶 分子(9 )的誘電率爲正,畫素內部的共通電極(3 )與 液晶驅動電極(4 )相對於液晶分子(9 )的配向軸(P )(光學軸)成〈形之曲折狀,該〈形之曲折角度在±1 18 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 494265 A7 B7__ 五、發明説明() 〜土 4 5度的範圍以內。如此構造下,如第十七圖所示, 當共通電極(3 )與液晶驅動電極(4 )上被印加電壓, 令電極間產生電界時,液晶分子(9 )將以曲折部爲界作 左旋轉及右旋轉的兩種旋轉運動,對於視角特性的改善將 提供非常明顯的效果。 又如第十九至廿一圖所示爲單位畫素的平面圖,該畫 素電極係呈曲折狀,又影像信號配線(2 )及掃瞄信號線 (1 )亦呈曲折狀構造。 再如第廿五至廿八圖所示,爲共通電極(3 )、液晶 驅動電極(4 )、掃瞄信號線(1 )及影像信號配線(2 )等不同的配列位置,其主要係爲了將彩色瀘光片的顏色 的混色作好,而以DELTA來配置配列畫素。這個DELTA配 置主要被使用在A V( AUDIO & VIDEO)上。 如第廿九圖、三十圖所示,是將畫素作條狀配置時, 該共通電極(3 )、掃瞄信號線(1 )及影像信號配線.( 2 )的配列關係平面圖,該條狀配置主要被使用在〇A事 .務機器上。 又如第十八圖、第十九至廿一圖、第廿五至三十圖所 示,爲本發明第六實施例之平面圖及動作原理,如該液晶 分子(9)的誘電率異方性爲負,畫素內部的共通電極( 3 )與液晶驅動電極(4 )相對於液晶分子(9 )的配向 軸(P)(光學軸)成〈形之曲折狀,該〈形之曲折角度 係在九十度以外的4 5度〜1 3 5度間。在如是構造下, 如第十八圖所示,當共通電極(3 )與液晶驅動電極(4 19 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) ---------·裝II (請先閱讀背面之注意事項再填寫本頁) 訂 494265 A7 B7 1— _____- _ 五、發明説明(/f) )上被印加電壓,令電極間產生電界時,液晶分子(9 ) 將以曲折部爲界作左旋轉及右旋轉的兩種旋轉運動,對於 視角特性的改善將提供非常明顯的效果。 又如第十九至廿一圖所示爲本實施例單位畫素的平面 圖,該畫素電極係呈曲折狀,又影像信號配線(2)及掃 瞄信號線(1 )亦呈曲折狀構造。而與第五實施例完全相 同。 而前述第五及第六實施例,均經由配向處理,使於上 下基板界面處的液晶分子(9 )配向互爲平行,其偏光軸 (光學軸)上與下皆成直角配置,當無電界時,即光無法 由畫素通過的常黑模式(NORMAL BLACK MODE)。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 如第廿二圖所示,係本發明第七實施例之剖面圖,其 由共通電極(3 )與液晶驅動電極(4 )所構成的畫素電 極表面分別形成有反射防止層(2 2 ),當光侵入液晶層 時,反射防止層(2 2 )將防止其由畫素電極表面反射, 關於代表性反射防止層(2 2 )材料,如爲鉻金屬,鉻/ .氮化鉻/氧化鉻或鉻/氧化鉻等氮化膜與氧化膜的雙層構 造,或只有氧化膜的單層構造均可;又如爲鉬金屬時,鉬 /氮化鉬/氧化鉬或鉬/氧化鉬等構造亦可爲所用,其他 _如非晶矽質(a-Si)或碳(C )等等,亦可獲致相當理想的 反射效果,又 Cr(鉻)\CrSix, Mo(鉬)\MoSix, Ti(欽 )\TiSix,W(鎢)\WSix,Ta(鉬)\TaSix,Nb(鈮)\NbSix 等金 屬矽化物亦具有防止光反射的效果。而亦可用來作爲前述 的反射防止層(2 2 )。 20 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) 經濟部中央標準局員工消費合作社印製 494265 A7 _ B7 五、發明説明() 再如第四五圖所示,係本發明第七實施例之剖面圖, 其主要係於共通電極(3 )所構成畫素電極表面的絕緣膜 (5 )上形成有反射防止層(2 2 ),此一作法亦具有相 同的防止光反射效果。至於絕緣膜(5 )上所形成反射防 止層(2 2 )可使用非晶質矽層或彩色濾光片所用的藍色 顏料系或黑色顏料系的光阻(RESIST)。 又其對向基板(1 1 )上未設黑光罩(BLACK MASK) 的彩色濾光片時,掃瞄信號線電極及影像信號配線的表面 形成如第廿二圖所示之反射.防止層(2 2 ),可得到對比 非常良好的橫電界方式液晶顯示裝置。 綜上所述,本發明之掃瞄信號線、影像信號配線、共 通電極及液晶驅動電極分別經由絕緣膜各自位於不同層上 而形成異層化,並據以產生不短路,高開口率,高對比及 殘像少的液晶面板(PANEL);又因畫素電極相對於液晶配 向方向成曲折狀,其單位畫素內之液晶分子可產生兩種不 同的旋轉方向,而使視野角度之擴大成爲可能,且仍可使 用以往的配向材料,亦因而降低生產成本。故由前述可知 ,本發明已具備產業上利用性與進步性,並符合發明專利 之要件,爰依法提起申請。 21 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 公釐) (請先閲讀背面之注意事項再填寫本頁)、 1T 494265 Μ B7 V. Description of the invention (丨 丨) (ding) The semiconductor layer (w) is opened as shown in Figures 3 to 5, Figures 31, and 28, which are the first of the present invention. The unit pixel cross section and plan view of the preferred embodiment are mainly based on a glass substrate (10) provided with a common electrode (3), and covered with a lower layer insulating film (1 4), the insulating film (1 4) It is composed of silicon nitride (SiN) or silicon oxide (Si02), and a scanning signal line (1) (GATE electrode) is formed on the insulating film (1 4). The scanning signal line (1) is Aluminium (A1) and other metals that can be anodized are preferred. In addition, metals such as complex, molybdenum, titanium, tungsten, and giant can be used. Metals with low electrical resistance. Two layers and three layers overlap. Composite metals are also available. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page), and then scan the signal line (1) and cover it with a gate insulating film (5), and then The insulating film (5) forms an amorphous silicon film (τ) (a-Si) as the active layer of the transistor, and the image signal wiring (2) and the collector electrode (D) are formed on the insulating film (5). Image signal wiring. (2) and collector electrode (D) are respectively overlapped with one of the amorphous silicon film (T), and an insulating film (6) is formed thereon to completely cover the aforementioned insulating film (5), image The signal wiring (2), the collector electrode (D), the amorphous silicon film (T), and then a hole (1 5) is formed at the insulating film (6) corresponding to the collector electrode (D), and the insulating film is formed on the insulation The liquid crystal driving electrode (4) on the film (6) is electrically connected to the collector electrode (D) through the perforation (15). The surface of the active matrix substrate is arranged on the surface of the active matrix substrate in which the unit pixels formed by the foregoing structure are arranged in a matrix. There is an alignment film (7), the alignment film (7) is 13 paper sizes applicable to China National Standard (CNS) A4 specifications (210X 297 mm) 494265 A7 B7 V. Description of the invention (>) From? 1 (? 01 ^-: ^ 10 £), the surface of which is subjected to alignment treatment (RUBBING), and the surface of the alignment film (7) is formed with another alignment film (8), the surface of the alignment film (8) is also implemented With alignment treatment, the rod-shaped liquid crystal molecules (9) are sealed between the two alignment films (7) (8), and the surface of the re-alignment film (8) is provided with an opposite substrate (1 1) opposite to the substrate (10). A polarizing plate (12) (13) is disposed on the opposite outer surfaces of the two substrates (1 0) (1 1). The alignment film (7) (8) is provided with an alignment treatment, but the alignment treatment may not be performed, and the light-registration heat-resistant local molecules may be subjected to a photo-registration reaction by using linearly polarized light, so that the film having liquid crystal alignment can also be subjected to light. When the superimposed heat-resistant polymer alignment film is aligned, the pretilt angle is not easy to occur. In the liquid crystal display mode of the transverse electrical interface mode, the smaller the pretilt angle, the better the viewing angle characteristics. Photo-registable heat-resistant polymer alignment film. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) and when the liquid crystal molecules (9) have no electrical field, as shown in Figure 23, compared to the straight liquid crystal drive electrodes (4) and the long-side direction of the common electrode holds an alignment at several angles (1 to 45 degrees), and the alignment of the liquid crystal molecules (9) at the interface portion of the upper and lower substrates is parallel to each other. When the dielectric anisotropy is positive, when the liquid crystal molecules (9) with negative dielectric anisotropy are used, the cross angle between the axis (P) of the alignment direction of the liquid crystal molecules (9) and the pixel electrode (4) (3) is set. It can be between 45 and 89 degrees. In the foregoing first embodiment, the common electrode (3) and the liquid crystal driving electrode (4) shown in the third figure are transparent insulating films (14) (5 14) The paper size is applicable to the Chinese National Standard (CNS) A4 Specifications (210X297 mm) 494265 A7 B7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs _ V. Description of the invention (U)) (6) is insulated and isolated, so as shown in the fourth figure, the common electrode (3) and the liquid crystal The driving electrodes (4) can overlap one another, and the overlapping portion can be used to form a compensation capacitor. As shown in the fifth figure, the liquid crystal driving electrode (4) cannot overlap the common electrode (3), and can also overlap the scanning signal line (1). Therefore, the compensation can be greatly improved without reducing the aperture ratio. capacitance. As shown in Figs. 27 and 28, the liquid crystal driving electrode (4) can completely cover the amorphous silicon active layer (T) of the thin film transistor TFT, as shown in Figs. As shown, overlapping a part of the common electrode (3) with the scanning signal line (1) or the image signal wiring (2) can greatly reduce the light leaked out of the effective pixels. As shown in the sixth to tenth figures, this is the second preferred embodiment of the present invention, which is mainly formed on a glass substrate (10) by first scanning signal lines (1), and then on the scanning signal lines (1). Anodizing treatment is performed on the upper surface to form an anodic oxide film (17). The anodizing film (17) can be treated by metals such as aluminum, titanium, niobium, or an alloy thereof. In addition, the gate electrode of the laminated structure can also be anodized. After the film (17), a common electrode (3) is still formed on the glass substrate (10), and then a fully covered insulating film (5) is formed on the aforementioned structure. The first embodiment is the same. In this embodiment, because the anodic oxide film (1 7) can completely isolate the cat scanning signal line (1) from the common electrode (3), the scanning signal line (1) and the common electrode (3) can be surely prevented. Constitutes a short circuit. The aforementioned method is also applied to the first embodiment, and a part of the common electrode (3) is used. 15 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). (Please read the precautions on the back before filling in this page) Order 丨 · " ^ 65 Α7 Β7 V. Description of the invention (/ f) Overlapping with the video signal wiring (2) can also achieve the same effect, and it is also used for LCD driving electrodes (4) A part of the active layer (T) of the thin film transistor may be completely covered. As shown in the eleventh to thirteenth drawings, they are respectively a cross-section and a plan view of a unit pixel of a third preferred embodiment of the present invention, which are mainly the scanning signal line (1) and the common electrode central line (18). At the same time, it is formed on the same layer on the surface of the glass substrate (10), and anodized separately, and an anodized film (17) is formed thereon to be isolated. The constituent material of the anodized film (17) is the same as the previous one. The embodiment is the same; a pixel electrode (20) is formed on the anodized film (17) of the common electrode central line (18), and the pixel electrode (20) passes through the anodized film (17). The formed perforation forms an electrical connection with the common electrode central line (18). Subsequently, a completely covered insulating film (5) is formed on the aforementioned structure, and a multilayer implementation structure of the insulating film (5) or more is the same as the first embodiment. In the foregoing embodiment, the anodic oxide film (17) on the scanning signal line (1) can make the scanning signal line (1) and a part of the common electrode. The pixel electrode (20) is completely insulated and isolated, and The scanning signal line and the common electrode center line (18) are generally quite far apart, and even if formed on the same layer, short-circuiting will hardly occur. Applying the aforementioned method to the first example, a part of the common electrode (3) and the pixel electrode (20) can be overlapped with the image signal wiring (2), and can also be used to completely cover a part of the liquid crystal driving electrode (4) with a film Active layer (T) of the transistor. As shown in the fourteenth to sixteenth drawings, the twenty-second to twenty-fourth drawings, and the twenty-ninth to forty-fourth drawings, the cross-sections and plan views of the unit pixels of the fourth embodiment of the present invention are shown. (CNS) A4 specification (21 × 297 mm) (Please read the precautions on the back before filling out this page) _Printed · Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 494265 A7 B7 _ 5. Description of the invention (λΓ), A scanning signal line (1) (gate electrode) is formed on the glass substrate (10), and an insulating film (5) covering the scanning signal line (1) is formed on the insulating film (5). A transistor active layer (T) composed of an amorphous silicon film is formed, and then an image signal wiring (2) and a collector electrode (D) which are in contact with the active layer (T) are formed, and an insulating film covering the foregoing structures ( 6) Then, a hole (1 5) and a liquid crystal driving electrode (4) are formed on the insulating film (6) corresponding to the collector electrode (D), and the liquid crystal driving electrode (4) is through the hole (1 5) ) Is in contact with the collector electrode (D) and forms an electrical connection, and then forms an upper insulating film (2 1) Foregoing are completely covered. An alignment film (7) is provided on the surface of the active matrix substrate in which the unit pixels composed of the foregoing structure are arranged in a matrix. The alignment film (7) is composed of PI (POLY-IMIDE). Alignment treatment (RUBBING), and another alignment film (.8) is formed on the surface of the alignment film (7), the surface of the alignment film (8) is also subjected to alignment treatment, and the surface of the alignment film (8) is provided with a substrate ( A polarizing plate (12) (13) is disposed on the opposite outer surface of the two substrates (1 1) and the opposite outer surfaces of the two substrates (1 0) (1 1). Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). According to the aforementioned fourth embodiment, as shown in Figure 14, the common electrode (3) and the liquid crystal drive electrode ( 4) The insulating film (2 1) is insulated from each other, so as shown in the fifteenth figure, the two can be overlapped with each other. This overlapping portion can be used to form a compensation capacitor. As shown in FIG. 16, 'the liquid crystal driving electrode (4) may not only overlap the common electrode (3)', but may also overlap the scanning signal line (1). Therefore, the first 17 sheets of paper that do not reduce the aperture ratio can be re-applied to the Chinese National Standard (CNS) A4 (210 X 297 mm) 494265 A7 B7. 5. The description of the invention (name) can greatly improve the compensation capacitance. As shown in Figures 29 to 42, the liquid crystal driving electrode (4) or common electrode (3) can completely cover the amorphous silicon active layer (T) of the thin film transistor TFT, as shown in Figures 29 to 42. As shown in Fig. 24, overlapping a part of the common electrode (3) with the scanning signal line (1) or the image signal wiring (2) can greatly reduce the light leaked out of the effective pixels. Therefore, it is not necessary to use the color filter of the black mask. As shown in the fourth, fourth, and fourth figures, in this embodiment, the upper layer insulating film (2 1) formed on the surface of the liquid crystal driving electrode (4) in the effective pixel can be removed, and an opening window (W) (OPEN) is formed. WINDOW). Therefore, the alignment film (7) can be directly formed on the surfaces of the liquid crystal driving electrode (4) and the common electrode (3). Since the liquid crystal is basically driven by alternating current, if the gate bias of the DC component (BIAS VOLTAGE) is printed, there will be a polarization of the alignment film (7), and the interface between the alignment film (7) and the insulating film (21) A charge trap (CHARGE TRAP) phenomenon appears, and an afterimage appears on the screen. In this example, the two electrodes directly contact the alignment film. (7) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the back first) When you fill in this page again, the charge trapping phenomenon will be reduced and the afterimage will not occur easily. In the foregoing first, second, and third embodiments, windows (W) may be formed as shown in the fourth, fourth, and fourth figures. In addition, as shown in the seventeenth diagram, the nineteenth to the twenty-first diagram, and the twenty-fifth to the thirty-third diagrams, this is a plan view and operation principle of the fifth embodiment of the present invention. For example, the liquid crystal molecule (9) has an electric induction rate Positive, the common electrode (3) inside the pixel and the alignment axis (P) (optical axis) of the liquid crystal driving electrode (4) with respect to the liquid crystal molecules (9) are formed into a zigzag shape, and the zigzag angle of the shape is within ± 1 18 This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm). Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 494265 A7 B7__ 5. Description of the invention () ~ Within 45 degrees of soil. With this structure, as shown in Figure 17, when the common electrode (3) and the liquid crystal drive electrode (4) are imprinted with a voltage to cause an electrical boundary between the electrodes, the liquid crystal molecules (9) will be left-handed with the zigzag portion as the boundary. The two rotational movements of turning and turning right will provide very obvious effects on the improvement of viewing angle characteristics. As shown in the nineteenth to twenty-first figures, the unit pixels are plan views. The pixel electrodes are zigzag, and the image signal wiring (2) and the scanning signal line (1) are also zigzag. As shown in Figures 25 to 28, there are different arrangement positions such as a common electrode (3), a liquid crystal driving electrode (4), a scanning signal line (1), and an image signal wiring (2). The color mixing of the color phosphor film is done, and the arranged pixels are arranged by DELTA. This DELTA configuration is mainly used on A V (AUDIO & VIDEO). As shown in Figures 29 and 30, when the pixels are arranged in a strip, the common electrode (3), the scanning signal line (1), and the image signal wiring. (2) are a plan view of the arrangement relationship of the common electrodes (3), The stripe configuration is mainly used on the OA server. As shown in the eighteenth, nineteenth to twenty-first, and twenty-fifth to thirty-three figures, this is a plan view and a principle of operation of the sixth embodiment of the present invention. The property is negative, and the common electrode (3) inside the pixel and the alignment axis (P) (optical axis) of the liquid crystal driving electrode (4) with respect to the liquid crystal molecule (9) form a zigzag shape, and the zigzag angle of the shape It is between 45 and 135 degrees other than 90 degrees. Under this structure, as shown in the eighteenth figure, when the common electrode (3) and the liquid crystal drive electrode (4 19 this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----- ---- · Installation II (Please read the precautions on the back before filling this page) Order 494265 A7 B7 1— _____- _ V. Description of the invention (/ f)) When a voltage is applied to the electrode, an electrical boundary occurs between the electrodes, The liquid crystal molecules (9) will perform two types of rotation motions, left rotation and right rotation, with the zigzag portion as the boundary, which will provide a very obvious effect on the improvement of viewing angle characteristics. As shown in the nineteenth to twenty-first figures, the unit pixels of this embodiment are plan views. The pixel electrodes are zigzag, and the image signal wiring (2) and the scanning signal line (1) are also zigzag. . It is exactly the same as the fifth embodiment. In the foregoing fifth and sixth embodiments, the alignment of the liquid crystal molecules (9) at the interface of the upper and lower substrates is made parallel to each other through an alignment process, and the polarizing axes (optical axes) are arranged at right angles to the bottom. In normal black mode (NORMAL BLACK MODE) where light cannot pass through pixels. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) As shown in Figure 22, it is a cross-sectional view of the seventh embodiment of the present invention, which is composed of a common electrode (3) and An anti-reflection layer (2 2) is formed on the surface of the pixel electrode formed by the liquid crystal driving electrode (4). When light enters the liquid crystal layer, the anti-reflection layer (2 2) will prevent it from being reflected from the surface of the pixel electrode. The material of the anti-reflection layer (2 2), if it is chrome metal, chromium /. Chromium nitride / chromium oxide or chromium / chromium oxide and other double-layer structure of the nitride film and the oxide film, or a single-layer structure of only the oxide film Yes; for molybdenum metal, molybdenum / molybdenum nitride / molybdenum oxide or molybdenum / molybdenum oxide can also be used. Others_ such as amorphous silicon (a-Si) or carbon (C), etc. Can get quite ideal reflection effect, and Cr (Cr) \ CrSix, Mo (Molybdenum) \ MoSix, Ti (Qin) \ TiSix, W (Tungsten) \ WSix, Ta (Molybdenum) \ TaSix, Nb (Niobium) \ NbSix Other metal silicides also have the effect of preventing light reflection. It can also be used as the anti-reflection layer (2 2). 20 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm). Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 494265 A7 _ B7 V. Description of the invention () As shown in Figure 45, it is The cross-sectional view of the seventh embodiment of the present invention is mainly formed by forming an anti-reflection layer (2 2) on an insulating film (5) on the surface of a pixel electrode formed by a common electrode (3). This method also has the same prevention Light reflection effect. As for the reflection preventing layer (2 2) formed on the insulating film (5), a blue pigment-based or black pigment-based photoresist (RESIST) for an amorphous silicon layer or a color filter can be used. When the color filter of the black mask (BLACK MASK) is not provided on the opposite substrate (1 1), the surface of the scanning signal line electrode and the image signal wiring forms a reflection as shown in the second figure. 2 2), a liquid crystal display device of the transverse electric field type with very good contrast can be obtained. In summary, the scanning signal line, image signal wiring, common electrode, and liquid crystal drive electrode of the present invention are respectively formed on different layers through an insulating film to form a different layer, and accordingly, there is no short circuit, high aperture ratio, high Liquid crystal panel (PANEL) with few contrast and afterimages; and because the pixel electrode is zigzag relative to the liquid crystal alignment direction, the liquid crystal molecules in its unit pixel can generate two different directions of rotation, so that the angle of view is enlarged. It is possible and still possible to use conventional alignment materials, thus reducing production costs. Therefore, it can be known from the foregoing that the present invention has industrial applicability and progressability, and meets the requirements of invention patents, and has filed an application according to law. 21 This paper size applies to Chinese National Standard (CNS) A4 (210 X mm) (Please read the precautions on the back before filling this page)

Claims (1)

^265 A8B8c808i 、申請專利範圍 申請第861 _4號發明專利案中請^利範圍修正本 1 一種液日日日顯示裝置’主要係、於—基板上設有掃目苗 信號線、影像信號配線、前述掃瞄信號線與影像信號配線 的各交叉部上所形成的薄膜電晶體、前述薄膜電晶體上所 接續的液晶驅動電極、具有至少一部分與前述液晶驅動電 極成對向形成共通電極之主動式矩陣型基板、與前述主動 式矩陣型基板成對向之對向基板'夾設於前述主動式矩陣 型基板與前述對向基板間的液晶層所構成的橫電界方式主 動式矩陣型液晶顯示裝置;其中: JT 。亥掃目田彳5號線及液晶驅動電極及與該液晶驅動電極成 對向之共通電極分別經由絕緣膜之隔離而形成在不同層上 ,且液晶驅動電極隔著絕緣膜與掃瞄信號線或共通電極的 一部分互相重疊,而以液晶驅動電極為中心在其上層及下 層形成補償電容。 丄2 · —種液晶顯示裝置,主要係於一基板上設有掃瞄 乜谠線、影像信號配線、前述掃瞄信號線與影像信號配線 的各交叉部上所形成的薄膜電晶體、前述薄膜電晶體上所 接續的液晶驅動電極、具有至少一部分與前述液晶驅動電 極成對向形成共通電極之主動式矩陣型基板、與前述主動 式矩陣型基板成對向之對向基板、夾設於前述主動式矩陣 型基板與前述對向基板間的液晶層所構成的橫電界方式主 動式矩陣型液晶顯示裝置;其中: 該信號掃瞄線、影像信號配線及共通電極分別經由絕 緣膜的隔離而形成在不同層上,且影像信號配線與共通電 22 ^ 297¾) 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 494265 A8B8C8D8 ‘申請專利範園 °隔著Ά緣膜相互重g ’其兩側並為共通電極所包夹。 义3·如中請專利範圍第1或2項所述之液晶顯示裝置 月)述〜像彳s唬配線及晝素電極(液晶驅動電極與其成對 向认置的共通電極之一部分),相對於液晶配向方向呈士 1度〜±4 5度的角度範圍内之曲折構造。 4 ·如申請專利範圍第丄或2項所述之液晶顯示裝置 月ίι述掃0¾ 4號線及畫素電極相對於液晶配向方向呈士 1度〜土4 5度的角度範圍内之曲折構造。 5 ·如申請專利範圍第丄或2項所述之液晶顯示裝置 ,月纟述影像信號配線及晝素電極相對於液晶配向方向成除 9 0度以外之4 5度〜1 3 5度範圍内的曲折構造。 6 ·如申請專利範圍第1或2項所述之液晶顯示裝置 ,前述前述掃瞄信號線及晝素電極相對於液晶配向方向成除9 0度以外之4 5度〜1 3 5度範圍内的曲折構造。 23 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)^ 265 A8B8c808i, patent application scope application No. 861_4 invention patent case, please amend the scope of this patent 1 a liquid-day-day-day display device 'mainly, on the substrate is equipped with scanning signal line, video signal wiring, A thin film transistor formed on each crossing portion of the scanning signal line and an image signal wiring, a liquid crystal driving electrode connected to the thin film transistor, and an active type having at least a part of the liquid crystal driving electrode opposite to the liquid crystal driving electrode to form a common electrode A matrix-type substrate, and an opposite-matrix substrate that opposes the active-matrix substrate, and is a transverse-electric-boundary-type active-matrix-type liquid crystal display device constituted by a liquid crystal layer sandwiched between the active-matrix substrate and the opposing substrate. ; Of which: JT. The line 5 of Haesu Mudano, the liquid crystal driving electrode, and the common electrode opposite to the liquid crystal driving electrode are formed on different layers by isolation of the insulating film, and the liquid crystal driving electrode is separated from the scanning signal line through the insulating film. Or, a part of the common electrode is overlapped with each other, and a compensation capacitor is formed on the upper layer and the lower layer with the liquid crystal driving electrode as the center.丄 2 · A liquid crystal display device, mainly comprising a thin film transistor and a thin film formed on each substrate provided with a scanning line, an image signal wiring, and the intersection of the scanning signal line and the image signal wiring A liquid crystal driving electrode connected to the transistor, an active matrix substrate having at least a part opposed to the liquid crystal driving electrode to form a common electrode, an opposite substrate opposed to the active matrix substrate, and sandwiched between the active substrate A transverse electric boundary active matrix liquid crystal display device composed of an active matrix substrate and a liquid crystal layer between the opposite substrates, wherein: the signal scanning lines, image signal wiring, and common electrodes are formed through isolation of insulating films, respectively. On different layers, and the image signal wiring and common energization are 22 ^ 297¾) This paper standard is applicable to China National Standard (CNS) A4 specification (21〇494265 A8B8C8D8 'Patent for patent application °° Weighing each other through the edge film' g The side is surrounded by a common electrode. Meaning 3. The liquid crystal display device described in item 1 or 2 of the patent scope)) ~ like Day and pixel electrodes (liquid crystal driving electrode portion of the common electrode opposed to the recognition pair therewith), with respect to the liquid crystal with a zigzag configuration within the angular range of ± 1 ° ~ ± 4 5 degrees of the direction. 4 · According to the liquid crystal display device described in item 丄 or 2 of the scope of the patent application, the scanning line 4 and the pixel electrode are in a zigzag structure in the angle range of 1 ° ~ 45 ° with respect to the liquid crystal alignment direction. . 5 · According to the liquid crystal display device described in item 丄 or 2 of the scope of the patent application, the video signal wiring and the daylight electrode are aligned with the liquid crystal alignment direction within the range of 45 ° to 135 ° except for 90 °. Zigzag structure. 6 · According to the liquid crystal display device described in item 1 or 2 of the scope of the patent application, the aforementioned scanning signal line and daylight electrode are in a range of 45 to 135 degrees other than 90 degrees with respect to the alignment direction of the liquid crystal. Zigzag structure. 23 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
TW86108024A 1996-06-14 1997-06-11 Liquid crystal display device TW494265B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21489696A JP3486859B2 (en) 1996-06-14 1996-06-14 Liquid crystal display

Publications (1)

Publication Number Publication Date
TW494265B true TW494265B (en) 2002-07-11

Family

ID=16663362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW86108024A TW494265B (en) 1996-06-14 1997-06-11 Liquid crystal display device

Country Status (2)

Country Link
JP (1) JP3486859B2 (en)
TW (1) TW494265B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414602B2 (en) 2003-08-26 2008-08-19 Seiko Epson Corporation Method of driving liquid crystal display device, liquid crystal display device, and portable electronic apparatus

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040109103A1 (en) 1998-06-30 2004-06-10 Hitachi, Ltd. Liquid crystal display device
KR100643444B1 (en) * 1998-03-06 2006-11-10 가부시키가이샤 히타치세이사쿠쇼 Liquid display device
KR100543027B1 (en) * 1998-04-03 2006-04-12 삼성전자주식회사 Flat Drive Liquid Crystal Display
KR100306799B1 (en) * 1998-05-29 2001-11-30 박종섭 Liquid crystal display
KR100306798B1 (en) * 1998-05-29 2001-11-30 박종섭 Lcd having high opening rate and high transmissivity and preventing color shift
KR100293811B1 (en) * 1998-05-29 2001-10-26 박종섭 Ips mode liquid crystal display device
KR100293810B1 (en) * 1998-05-29 2001-10-26 박종섭 Ips mode liquid crystal display device having no color shift
JP3129293B2 (en) 1998-08-13 2001-01-29 日本電気株式会社 Liquid crystal display
US6287899B1 (en) * 1998-12-31 2001-09-11 Samsung Electronics Co., Ltd. Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same
JP4197574B2 (en) * 1999-05-20 2008-12-17 株式会社半導体エネルギー研究所 Liquid crystal display
US6630977B1 (en) 1999-05-20 2003-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor formed around contact hole
JP4724339B2 (en) * 1999-09-07 2011-07-13 株式会社日立製作所 Liquid crystal display
JP2001092379A (en) * 1999-09-27 2001-04-06 Nec Corp Active matrix substrate and its manufacturing method
WO2001071417A1 (en) * 2000-03-21 2001-09-27 Hitachi, Ltd. Liquid crystal display
KR20020002052A (en) * 2000-06-29 2002-01-09 주식회사 현대 디스플레이 테크놀로지 Method for manufacturing fringe field switching mode lcd
JP3427981B2 (en) 2000-07-05 2003-07-22 日本電気株式会社 Liquid crystal display device and manufacturing method thereof
TWI284240B (en) 2000-09-27 2007-07-21 Matsushita Electric Ind Co Ltd Liquid crystal display device
JP2003015146A (en) * 2001-07-04 2003-01-15 Hitachi Ltd Liquid crystal display device
KR100823053B1 (en) * 2001-12-28 2008-04-18 엘지.필립스 엘시디 주식회사 An array substrate for In-Plane switching mode LCD and the method for fabricating the same
JP4082493B2 (en) * 2002-06-06 2008-04-30 株式会社 日立ディスプレイズ Liquid crystal display
KR100923673B1 (en) * 2002-08-07 2009-10-28 엘지디스플레이 주식회사 In plane switching mode liquid crystal display device
KR100899625B1 (en) * 2002-08-07 2009-05-27 엘지디스플레이 주식회사 In plane switching mode liquid crystal display device
KR100919185B1 (en) * 2002-08-21 2009-09-29 엘지디스플레이 주식회사 In plane switching mode liquid crystal display device
KR100853780B1 (en) * 2002-08-24 2008-08-25 엘지디스플레이 주식회사 Liquid crystal display device of in-plane switching
KR100870668B1 (en) * 2002-10-01 2008-11-26 엘지디스플레이 주식회사 In plane switching mode liquid crystal display device
KR100899627B1 (en) * 2002-11-18 2009-05-27 엘지디스플레이 주식회사 In plane switching mode liquid crystal display device
KR100920344B1 (en) * 2002-12-03 2009-10-07 삼성전자주식회사 thin film transistor array panel for liquid crystal display
KR100963029B1 (en) * 2003-03-24 2010-06-09 엘지디스플레이 주식회사 A method of forming IPS mode LCD
KR100961695B1 (en) 2003-06-12 2010-06-10 엘지디스플레이 주식회사 An array substrate for In-Plane switching mode LCD and method of the same
KR100978254B1 (en) 2003-06-30 2010-08-26 엘지디스플레이 주식회사 In plane switching mode liquid crystal display device having 4-pixel structure
KR101050945B1 (en) * 2003-09-19 2011-07-20 엘지디스플레이 주식회사 Transverse electric field mode liquid crystal display device
KR101001520B1 (en) * 2003-10-09 2010-12-14 엘지디스플레이 주식회사 In Plane Switching mode liquid crystal display device and the fabrication method thereof
KR101041613B1 (en) * 2003-11-25 2011-06-15 엘지디스플레이 주식회사 In-Plane switching mode LCD
KR101186863B1 (en) * 2003-12-29 2012-10-05 엘지디스플레이 주식회사 Multi-domain in plane switching mode liquid crystal display device
JP2005257883A (en) 2004-03-10 2005-09-22 Nec Lcd Technologies Ltd Liquid crystal display device
KR101050348B1 (en) * 2004-05-31 2011-07-19 엘지디스플레이 주식회사 Transverse electric field liquid crystal display device
KR101157226B1 (en) * 2004-05-31 2012-06-15 엘지디스플레이 주식회사 Liquid crystal display and method for manufacturing lcd
KR101088384B1 (en) 2004-09-16 2011-12-01 엘지디스플레이 주식회사 An array substrate for liquid crystal display device and fabricating method thereof
KR101354598B1 (en) * 2005-03-10 2014-01-22 엘지디스플레이 주식회사 An array substrate for In-Plane switching mode LCD and method of fabricating of the same
US8218120B2 (en) 2005-03-31 2012-07-10 Lg Display Co., Ltd. Array substrate for in-plane switching liquid crystal display device and method of fabricating the same
KR101146470B1 (en) * 2005-05-27 2012-05-21 엘지디스플레이 주식회사 An array substrate for Liquid Crystal Display device and the method for fabricating the same
KR100789089B1 (en) 2005-06-09 2007-12-26 엘지.필립스 엘시디 주식회사 Liquid crystal display device
KR101182557B1 (en) * 2005-06-24 2012-10-02 엘지디스플레이 주식회사 Liquid crystal display device and method for manufacturing thereof
KR101148400B1 (en) * 2005-06-29 2012-05-23 엘지디스플레이 주식회사 In-plain switching mode liquid crystal display device
EP2270583B1 (en) 2005-12-05 2017-05-10 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
KR101296621B1 (en) * 2005-12-29 2013-08-14 엘지디스플레이 주식회사 Liquid Crystal Display Device And Method For Fabricating The Same
JP5477523B2 (en) * 2006-06-15 2014-04-23 三国電子有限会社 Low cost large screen wide viewing angle fast response liquid crystal display
JP5216204B2 (en) 2006-10-31 2013-06-19 株式会社半導体エネルギー研究所 Liquid crystal display device and manufacturing method thereof
JP2009294633A (en) 2007-09-26 2009-12-17 Nec Lcd Technologies Ltd Liquid crystal display device
JP5875014B2 (en) * 2007-09-26 2016-03-02 Nltテクノロジー株式会社 Liquid crystal display
JP2009180981A (en) * 2008-01-31 2009-08-13 Mitsubishi Electric Corp Active matrix substrate, and manufacturing method therefor
US8760479B2 (en) 2008-06-16 2014-06-24 Samsung Display Co., Ltd. Liquid crystal display
JP5380416B2 (en) * 2010-10-20 2014-01-08 株式会社ジャパンディスプレイ Liquid crystal display
JP5572562B2 (en) * 2011-01-19 2014-08-13 株式会社ジャパンディスプレイ Liquid crystal display
KR101635668B1 (en) * 2011-04-08 2016-07-01 가부시키가이샤 재팬 디스프레이 Liquid crystal display device
JP5647955B2 (en) * 2011-08-24 2015-01-07 株式会社ジャパンディスプレイ Liquid crystal display
JP2012234212A (en) * 2012-09-03 2012-11-29 Nlt Technologies Ltd Active matrix substrate and liquid crystal panel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7414602B2 (en) 2003-08-26 2008-08-19 Seiko Epson Corporation Method of driving liquid crystal display device, liquid crystal display device, and portable electronic apparatus
US8248338B2 (en) 2003-08-26 2012-08-21 Seiko Epson Corporation Method of driving liquid crystal display device, liquid crystal display device, and portable electronic apparatus

Also Published As

Publication number Publication date
JPH103092A (en) 1998-01-06
JP3486859B2 (en) 2004-01-13

Similar Documents

Publication Publication Date Title
TW494265B (en) Liquid crystal display device
TWI228199B (en) Liquid crystal display device
US20230408876A1 (en) Liquid crystal display panel
US7724336B2 (en) In-plane switching mode liquid crystal display device having first and second common electrode connection lines and first and second pixel electrode connection lines being formed on the same layer
JP3211581B2 (en) Liquid crystal display
TWI285780B (en) Liquid crystal display device
TW583479B (en) Active matrix liquid crystal display device and liquid crystal material
TW493100B (en) Thin film transistor integrated device, method for manufacturing the same, and liquid crystal display apparatus
JP4171145B2 (en) Multi-domain liquid crystal display device
TW412658B (en) Liquid crystal display apparatus having pixels of different orientation
JP2701832B2 (en) Liquid crystal display
US7751009B2 (en) Array substrate for in-plane switching mode liquid crystal display
JP2002268074A (en) Liquid crystal display device
TWI223119B (en) Liquid crystal display device
US20090009704A1 (en) Liquid crystal device and electronic apparatus
TW526365B (en) Multi-domain vertical alignment liquid crystal display
JPH06250210A (en) Liquid crystal display device and its production
TW468081B (en) Liquid crystal display device
JP4875702B2 (en) Transflective liquid crystal display device and manufacturing method thereof
TW470859B (en) Liquid crystal display device
US20090128765A1 (en) Display device
WO2007139198A1 (en) Semitransparent liquid crystal display
US20220276538A1 (en) Array substrates and liquid crystal display panels thereof
JP5300507B2 (en) LCD panel
JP2002014350A (en) Liquid crystal display device

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent