TW583479B - Active matrix liquid crystal display device and liquid crystal material - Google Patents

Abstract

An active matrix liquid crystal display device is provided, in which an after image remaining after removing an application of a direct current voltage is suppressed. The active matrix liquid crystal display device has a liquid crystal layer containing a liquid crystal molecule having negative dielectric anisotropy and a dopant having a dissociative group.

Description

7C 347 Μ ________________B7 V. Description of the invention (1) The technical field advised by Chuangming (please read the note on the back-S-Fill this 苋) The present invention relates to the so-called in-plane conversion method in the liquid crystal display device. Active matrix type liquid crystal display device. The prior art liquid crystal display device is a liquid crystal layer sandwiched between a pair of substrates, and the liquid crystal molecules are applied to it. The electric field changes the alignment direction of the liquid crystal, thereby generating an optical change of the liquid crystal layer, and using the change for display. Conventional active-matrix liquid crystal display devices set the direction of the electric field applied to the liquid crystal to be approximately perpendicular to the substrate surface sandwiching the liquid crystal, and can use the optical rotation of the liquid crystal layer as a twisted nematic (τ N) display mode for display. to represent. Jiujilang ^ Said that the production and delivery workers in the blanket are cost-effective. On the other hand, using comb-shaped electrodes, the direction of the electric field applied to the liquid crystal is approximately parallel to the substrate surface, and the birefringence of the liquid crystal is used for in-plane conversion ( IPS) liquid crystal display devices have been proposed in Japanese Patent Publication No. 6 3-2 1907, US Patent No. 4345249, WO91 / 10936, Japanese Patent Application Laid-Open No. 6-160878, and the like. Compared with the previous T N method, the in-plane conversion method has the advantages of wide viewing angle and low load capacitance. It is a new type of active matrix liquid crystal display device that replaces the T N method. The technology is rapidly progressing in recent years. IPS method, as shown by M.〇he, M. Yoneya, and K. Kondo, J. Applied Physics, 1 997, Vol. 82, No. 4, 5 2 8-5 3 5 Anisotropic liquid crystals, liquid crystals with negative dielectric anisotropy can achieve -__- ---- ------------------------- --> -〇 ·· > ··, »* · · * I. ------ 1 '--- --- ^^^ Applicable to Chinese national standard 隼 (〇 、 〇 八 4 Specifications (2 丨 0: < 297 Gong) ^ 583479 B7___ V. Description of the invention (2) (Please read the precautions on the back before filling this page) More complete in-plane conversion. And, with negative dielectric anisotropy The dielectric rate of the anisotropic Z liquid crystal with respect to the long axis direction of the liquid crystal molecules is larger than that of the short axis direction perpendicular to the liquid crystal molecules, and the liquid crystal with positive dielectric anisotropy is relative to the long axis direction of the liquid crystal molecules. The dielectric constant is smaller in the direction of the minor axis perpendicular to it. The realization of complete in-plane conversion means that the viewing angle of a liquid crystal display device including halftone is expanded more completely. Therefore, in the PS method, the Based on the above viewpoint, the liquid crystal is based on a negative dielectric anisotropy. A liquid crystal having better properties is preferred. In the above-mentioned IPS method, a stripe-shaped opaque metal comb-type electrode provided in the surface of one of the paired substrates is used. However, recently, there is a method of improving I ps of transmittance and aperture ratio. It is proposed that instead of opaque metal electrodes, a comb-type electrode is formed of a transparent conductive material such as I τ〇 (indium tin oxide), and a liquid crystal material with negative dielectric anisotropy is used, even if it is formed on the edge of the comb-type electrode Part of the electric field can also orient the liquid crystal existing on the top of the transparent comb-type battery. Yin Xian, a goods-consumer consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, related to the above proposals, for example, SHLee, SL Lee and HYKim Asia Display, 1998, ρρ. 371-374, and SHLee, SLLee, Η.Y.Kim and TYEom, SID Digest, 1 999, ρρ · 202-205 0 It is reported in the above literature that the combined dielectric constants have different directions The IPS method with a negative anisotropy liquid crystal material and a short-pitch transparent comb electrode can have a penetration rate close to the TN method and still maintain a wide viewing angle characteristic equivalent to the IPS method. (CKS) Λ4: «_ί 格 (2 10 X 297 Gong) ~-5- Employees' Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs, India 583479 A7 _________________ B7 V. Description of the Invention (3) Problems to be solved by the invention · In a liquid crystal display device, when a liquid crystal driving voltage waveform superimposed with a DC voltage is applied to a liquid crystal layer, it is known that a DC voltage (DC offset voltage) remains in the liquid crystal layer after the DC voltage is removed. As discussed in "Liquid Crystal Display Technology" edited by Masamoto Matsumoto, published by Sangyo Books Co., Ltd. (1996), Chapter 2, pages 70 to 73, active matrix liquid crystal display devices are used in ordinary liquid crystal drives. When the driving voltage waveform of the superimposed DC voltage is applied to the liquid crystal layer and occurs on the structure of the active driving element of the liquid crystal display device for grayscale display, etc., the superimposed phenomenon of the DC voltage is still difficult to completely prevent. This phenomenon is a common phenomenon of the previous T N method and I P s method. Regardless of the above-mentioned residual DC voltage in the TN mode or the IPS mode, the brightness of the liquid crystal display device will be affected, and a brightness difference will occur between the applied and unapplied DC voltage parts or the parts with different DC voltage strengths. . Therefore, for example, when characters and graphics are displayed for a long period of time under normal driving conditions, the temporary display of previously displayed characters and graphics may occur after the display is eliminated. As a result, the uniformity of the display is impaired. Such a phenomenon is called "afterimage" in a liquid crystal display device. Although the intensity becomes weaker with time after the appearance and eventually disappears, it may take more than 30 minutes for the human eye to see it. As for the mechanism of the DC offset voltage remaining in the liquid crystal layer when a DC voltage is applied, pages 29 to 34 of the letter EID 9 6-8 9 (1 9 7-〇 1) are proposed. The known τ N method is used as an example. The borrowing liquid wave scale is applicable to the standard of Zhonggang i (one ™ eight eyesight (please read the precautions on the back before filling this page)

-6- 583479 A7 __ B7 V. Description of the invention (4) Model for explaining the behavior of ions in the crystal layer. According to this model, the cause of the residual DC voltage in the liquid crystal layer is presumed to be the DC voltage charged in the alignment film, and the alignment film used for the orientation of the ions to the liquid crystal. Therefore, the conclusion is that the residual of the DC voltage for several minutes is caused by the charging and relaxation of the alignment film, and the residual of the DC voltage for a long time above is caused by the adsorption of ions on the alignment film. Compared with the T N method, the I P S method has more afterimages. In the T N method, only the liquid crystal alignment control layer and the liquid crystal layer exist between the pixel electrode and the counter electrode, and the electric field acts on the pixel electrode, the liquid crystal alignment control layer, the liquid crystal layer, the liquid crystal alignment control layer, and the counter electrode in order. On the other hand, in the IPS method, an insulating film is provided between the pixel electrode and the counter electrode in addition to the liquid crystal layer and the liquid crystal alignment control layer. An electric field acts on the pixel electrode, the liquid crystal alignment control layer, the liquid crystal layer, the liquid crystal alignment control layer, Insulating layer, counter electrode. (Please read the precautions on the back before filling this page) Order the uniform film with the residual loose pressure and electric current. The film must be matched to the edge and the test film must only be equipped with the medium factor rule. N in T Fang Zhi S ^ Three mouths P Yi I and like the residual health issued by Yi Geng Ying Department of the Ministry of Economic Affairs Intellectual Property Bureau a (printing layer of industrial and consumer cooperatives, when the insulation layer is placed on the edge, there must be a pole-to-earth direction). The pair of electrodes or electrodes are opposite to the pair of electrodes and the image electrode < ,, 8 and the element is also in the same way as the field N square electricity τ N plus T. When the hole opening film edge is absolute β, Image like Yu Ruosheng's hair is like but Yi Yijing like relaxation fluid_ 松 、 贝 其 0 IS 着 1 i—Iril 11¾ Element ^ charge image Ϊ 2 and film field B is added to electricity 1¾ The controlling factor is applied to the ordering pair of crystals, the liquid layer, and the image layer. The crystal layer retains the liquid to control the residual, and the layer can be suppressed, that is, the electrical control of the flow of the hair is straight. country

格 " 1 ί, / iNS company 583479 Intellectual Property Office of the Ministry of Economic Affairs® Industrial Consumption Cooperative Cooperative Indu μ 5. Description of the Invention (5), Japanese Patent Application Laid-Open No. 7-1 5 9 7 8 6 proposes to borrow the orientation film and Optimal control method for dielectric constant and specific resistance of liquid crystal. In order to charge and relax the alignment film and the insulating layer and reduce the afterimage early, the low specific resistance ratio of the liquid crystal is effective. The lower specific resistance of the liquid crystal can be achieved by the addition of a substance capable of reducing the specific resistance of the liquid crystal. For example, Japanese Patent Application Laid-Open No. 1 1 to 3 0 2 6 5 2 proposes that the specific resistance of a liquid crystal can be adjusted by adding an oxidizing compound to the liquid crystal. However, in the I p S method using a liquid crystal material with a positive dielectric anisotropy and the PS method using a combination of a positive dielectric anisotropy liquid crystal material and a short-pitch comb electrode, the above-mentioned oxidizing compound is used. In liquid crystal, afterimages are not a problem. However, in the IPS method using a liquid crystal material having a negative dielectric anisotropy and the IPS method using a combination of a negative dielectric anisotropic liquid crystal material and a short-pitch comb electrode, even if the above-mentioned oxidizing compound is used, afterimages occur Still no improvement at all. The oxidizing compound has a molecular structure similar to that of a positive dielectric anisotropic liquid crystal material. That is, one of the two ends in the long axis direction of the molecule is formed by a polar group other than a non-polar or very low-polar group such as an alkyl group or an alkoxy group. That is, it is made of a highly polar group such as a cyano group or a fluorine-containing group, and has a stronger polarization in the long axis direction than in the short axis direction. In addition, liquid crystal molecules with positive dielectric anisotropy are polarized both in the short axis direction and in the long axis direction. In this way, the positive dielectric anisotropic liquid crystal material and such oxidizing compounds have their molecular axis directions and polarization directions. The paper's ifc scale is applicable to the Chinese National & Twin (CNS) 8-4 specification (210X 297 enthalpy).

·-·· (Please read the precautions on the back and fill in this animal C

-8- 583479 k.l _____ B7 V. Description of the invention (6) Uniformity and uniformity. This should be the reason that can effectively relax the residual DC voltage. However, in a liquid crystal material with negative dielectric anisotropy, the two ends of the long axis direction of the molecule are formed by non-polar or very low polarity groups such as alkyl and alkoxy groups, and one of the short axis directions of the molecule The side factors are formed by highly polar groups such as cyano and fluorine-containing groups, so the short axis direction of the molecule has stronger polarization than the long axis direction of the molecule. In this way, the liquid crystal material with a negative dielectric anisotropy and the oxidizing compound having a molecular structure similar to that of a positive dielectric anisotropic liquid crystal material do not have the same molecular axis direction and polarization direction. This should be the reason that the residual DC voltage cannot effectively relax. The present invention is to solve the above-mentioned problems, and an object thereof is to provide an I p S method using a liquid crystal material with negative dielectric anisotropy and a combination of a liquid crystal material with negative dielectric anisotropy and a short-pitch transparent comb electrode. In the IPS method, an uneven display state that is difficult to occur after a DC voltage is applied, that is, an IPS method active matrix liquid crystal display device with an afterimage. In addition, the present invention provides an I ps-type active matrix liquid crystal display device in which even if a liquid crystal material with positive dielectric anisotropy is used, dissociative dopant is added, and the shape of the electrode is changed so that an afterimage cannot easily occur. . In order to solve the above problems, the liquid crystal display device of the present invention includes a pair of substrates, a liquid crystal layer sandwiched between the pair of substrates, and disposed between the pair of bases t and i: the liquid crystal layer to define the liquid crystal. Alignment film of the orientation direction of the liquid crystal molecules of the layer, and a pixel electrode and a counter electrode that are applied with voltage to the liquid crystal layer, the liquid crystal molecules of the liquid crystal layer have a negative anisotropy of electric induction, and the liquid crystal layer is mixed with dissociation Based on the dopants. The size of this paper applies to the Chinese National Standard (C.NS) Λ, 丨 specifications (2 丨 οχ ”7 cm) (Please read the precautions on the back before filling this page)

W Order printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 583479 A7 ________ B7 _ V. Description of the invention (7) Using this liquid crystal display device, because the liquid crystal material with negative dielectric anisotropy contains dopants with dissociative groups, A liquid crystal display device capable of providing afterimage reduction (please read the precautions on the back #filler book f) 乂, including at least one transparent pair of substrates 5 formed on the opposite sides of the pair of substrates. An alignment control layer. A liquid crystal layer made of a liquid crystal composition having a negative dielectric anisotropy, which is arranged in contact with the liquid crystal alignment control layer (alignment film) between the pair of substrates, is formed on the pair of substrates via an insulating film. In a pixel electrode and a counter electrode, and an active matrix type liquid crystal display device connected to the pixel electrode and the counter electrode's active element, the liquid crystal layer has a dissociation group only in a short axis direction of the molecule, and contains a molecular axis direction. Doped with alkyl or alkoxy. With this liquid crystal display device, the direction of the molecular axis and the direction of polarization of the liquid crystal material with negative dielectric anisotropy and a dopant having a dissociating group only in the direction of the short axis of the molecule can be aligned. Therefore, it is possible to efficiently relax the residual DC voltage and provide a liquid crystal display device with reduced afterimage. Printed by the Maternity Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The dopants with dissociative groups here refer to acidic dissociated substances or alkaline dissociated substances, which are automatically dissociated in polar solvents to generate thallium ions, or react with water to produce them.物质 Θ Substance. Specifically, it refers to a substance such as a carboxylic acid (containing an anhydride), an amide, an amine, or an alcohol. When such a substance is added to the liquid crystal, the ion concentration of the liquid crystal increases and the specific resistance decreases. The image electrodes and the counter electrodes are made of transparent electrodes such as ITO, and a transparent insulating film is preferably used between the pixel electrodes and the counter electrodes to ensure electrical insulation. Paper tfU (degree applicable to Chinese national standard cNs) Α4 specification (2 丨 〇χ 297 public you -10-583479 A7 _________ B7 V. Description of the invention (8) (read the precautions before reading the back and fill in this page) For example The pixel electrode can be a short-pitch transparent comb electrode, and the counter electrode can be full of electrodes. In addition, the transparent insulating film can be made of, for example, IZ0, nitrided sand, titanium oxide, silicon oxide, and mixtures thereof. The following structure can provide a liquid crystal display element that can effectively relax the residual DC voltage and reduce the afterimage. The dopants with the following structure have a molecular structure similar to a liquid crystal material with negative dielectric anisotropy. That is, The two ends in the long axis direction of the molecule are formed by polar groups other than non-polar or very weakly polar groups such as alkyl groups and alkoxy groups. In addition, there is a dissociative group in the short axis direction of the molecule and there is a short axis direction in the molecule. Quite strong polarization. Liquid crystal molecules with negative dielectric anisotropy are also polarized in the direction of the short axis of the molecule beyond the direction of the long axis of the molecule. Liquid crystal materials with negative dielectric anisotropy and the following structure Homogeneous Axis direction coincides with the polarization direction can be effectively relaxed residual DC voltage of the economic unit chi remove destructive Riches Property Office employee cooperative printed γ

Η 〇 〇 Η Ν 〇 Η Ν Η 〇 R Η Ν γ hydrogen species 1 of any 2 R Ν

Ν C Η 〇 〇

Η Ν 〇C suitable size U Zhang "this s Ν c quasi standard I family from the public 583479 A7 B7 V. Description of the invention (9) Ν Η 2, any one of the Η Υ • ν • • hydrogen-F-C Ν, C 〇〇Η-C 〇Ν Η Ν Η 2 ^ — 〇 Η any one of 4: hydrogen FC Ν C 〇〇 Η C 〇Ν Ν Ν Η 2, 〇 Η any one of X 1 :: Single bond% — C 〇— 〇—, 〇1 C 〇—C 〇C Η 2 s -C Η 9--1 C〇 ~ -C: Η 2 〇—, 〇CH 2 -1--C Η ο — C Η 2-one C Η two C Η-any one of X 2 · σα early bonds — C 〇— 〇—, — 〇1 C 〇— C 〇c Η 2 a—C Η 2 — -C〇 --C Η 〇〇〇〇CH 2 1_ C Η ο 1 C Η 2 1 -C Η 2 C Η —Ran (Please read the precautions on the back before filling this page) A kind of A!: · Single key, Either phenyl or cyclohexyl A 2: Single bond, phenyl or cyclohexyl R i: Alkyl or alkoxy R 2: Alkyl Printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs or the alkoxy group. If the dopant has the following structure, it can provide a liquid crystal display element that can more effectively relax the residual DC voltage and reduce the residual image. The dopant having the following structure has a molecular structure similar to that of a liquid crystal material with a more negative dielectric anisotropy. In other words, the two ends in the long axis direction of the molecule are formed by a polar group other than a non-polar or very low-polar group such as an alkyl group or an alkoxy group. In this specification, a single bond means that there is no such group in between. Taking Xi as an example, when X! Is a single bond, it refers to the case of becoming a benzene ring -A i-R i. This paper scale applies the Chinese national standard (cns) λ4 彳) -12- 583479 A7 B7____ 5. Description of the invention (1) In addition, only one side of the short axis of the molecule is based on a dissociable or highly polar group. As a result, the short axis of the molecule has a stronger polarization than the long axis of the molecule. The negative liquid crystal material is also formed by a highly polar group such as a cyano group or a fluorine-containing group only on one side of the short axis direction of the molecule. The short axis polarization of the molecule is stronger than the long axis direction of the molecule. Both the liquid crystal material with negative dielectric anisotropy and the dopant having the following structure have the same molecular axis direction and polarization direction. Therefore, it can effectively relax the residual DC voltage. r2——a2—x2

C 〇 N Η

Aj R (Please read the notes on the back before filling in this page j γ C〇〇Η, 〇Η, Ν Η R,-Ν R 2 any of Υ: hydrogen, F, CN, C〇〇H, -C 〇NH,: Qiqilang temporarily removes the current production ^ 7M printed by the poverty alleviation cooperatives—NH 2, any one of Xi: single bond, one C001, one 0 one C0—, -C 0 C Η 〇C Η 2 kinds of X2: bond C 〇C Η '2-〇C Η 2 C 〇 一, -C Η 2 〇-C Η C Η = C Η-any one of 〇〇〇 One, one, one, one, one, one, one, C. Η 2 — C 〇 one, -c Η 2 0 'C Η C Η c Η = C Η — ren (CNS) A4 / JUiv- (2I0X) -13- Printed by the Ministry of Economic Affairs, Intellectual Property Management Bureau, Labor and Consumer Cooperatives, 583479 A7 ----------- B7 V. Description of Invention (杓) _ ~ Kind A i: Single bond, phenyl, cyclohexyl A2: any one of single bond, phenyl, cyclohexyl, R i: any one of hydrogen, alkyl or alkoxy R 2. Any liquid of hydrogen, alkyl or alkoxy It is preferably more than 100 pp ni (1 × 104 weight%) and less than 100 ppm. When a non-liquid crystal is added to a liquid crystal, it has the characteristics of a liquid crystal. (Liquid crystallinity) is deteriorated, and the temperature range of S is narrowed when non-liquid crystal is added too much. The present invention makes the content of the dopant in the liquid crystal to be above 100 ppm and below 1000 pm. The decrease in liquid crystallinity is suppressed within the allowable range of the structure of the active matrix liquid crystal display device, and at the same time, the afterimage can be reduced, and a liquid crystal display device having excellent liquid crystal characteristics and reduced afterimage can be provided. If the specific resistance of the liquid crystal is within 1 · 〇X 1 Q 9 ohm · cm or more 1. 〇 X 1 0 1 2 ohm · cm or less, you can provide a liquid crystal display device with reduced afterimage. At this time, the specific resistance is higher than 1 · 0 x 1 0 1 2 ohm · Liquid crystals of centimeters have no obvious effect of reducing afterimages, while the specific resistance is lower than 1 · 〇 X 1 0 9 ohms · Liquid crystals of centimeters cannot maintain high display quality. Liquid crystal alignment control layer, that is, alignment film, its film The thickness is from 20 nm to 300 nm. When the film thickness of the alignment film is less than 200 nm, the surface roughness of the IT0 film or the IZ0 film formed under the alignment film is 10 to 20 Nanometer, the uniformity of the alignment film deteriorates, and display unevenness occurs, forming The printing unevenness of the alignment film occurs when the film is oriented. Moreover, when the film thickness of the alignment film is more than 300 nm, the unevenness of the drying of the alignment film may cause streaks to appear. The paper size is suitable for China National Standards (CNS) ~! Specifications (2 丨 0: > < Gong Ning) (Please read the precautions on the back before filling this page)

-1Δ-583479 Printed by the Anti-Poverty Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 B7 V. Description of the invention (12) The thickness of the insulating film is between 0.1 and 4 microns. If the thickness of the insulating film is less than 0.1 micron, the insulation of the film is deteriorated, and if the thickness is more than 4 micron, the residual image is large. Liquid crystals with negative dielectric anisotropy can be liquid crystals containing liquid crystal molecules with a difluorobenzene structure in the molecule and liquid crystals containing liquid crystal molecules with a dicyanobenzene structure in the molecule. Liquid crystal molecules having a liquid crystal molecule having a difluorobenzene structure in the molecule and a liquid crystal molecule having a dicyanobenzene structure in the molecule may be used. Further, as the liquid crystal having negative dielectric anisotropy, a liquid crystal containing liquid crystal molecules having a monocyanocyclohexane structure in the molecule can be used. Also, liquid crystal molecules having a difluorobenzene structure in the molecule and liquid crystal molecules having a cyanocyclohexane structure in the molecule may be included. Furthermore, when using a liquid crystal with positive dielectric anisotropy, a dissociative dopant may be added and the structure of the pixel electrode and the counter electrode may be adjusted to suppress the occurrence of afterimages. One method is to take a pair of substrates, sandwich the liquid crystal layer of the pair of substrates, arrange an alignment film between the pair of substrates and the liquid crystal layer, and define an alignment direction of liquid crystal molecules of the liquid crystal layer, and apply a voltage The pixel electrode and the counter electrode of the liquid crystal layer are configured such that the liquid crystal molecules of the liquid crystal layer have a positive dielectric anisotropy, and the liquid crystal layer includes a dopant having a dissociative group. In addition, to the negative dielectric anisotropic liquid crystal composition, a dissociative group is added only in the direction of the short axis of the molecule in a range of 100 ppm to 1,000 ppm, and the two ends of the short axis direction of the molecule are added. Standards for alkyl or alkane paper are applicable to China National Standards (CNS) (1 > · Kif back 1i..r), and then fill out this page)

583479 A7 B7 V. Description of the invention (13) Liquid crystal composition substances characterized by dopants of oxygen groups are also effective. Brief Description of the Drawings Fig. 1 is a plan view of a structure example of one pixel and its surroundings of a liquid crystal display portion of an active matrix color liquid crystal display device. Figure 2 Figure 1 is a sectional view taken along the line Π-π. Fig. 3 Fig. 1 is a cross-sectional view of the thin film transistor T F T along the DI-melon line. FIG. 4 is a cross-sectional view of the storage capacitor C s t g forming portion along the line IV-IV in FIG. 1. Fig. 5 is an explanatory diagram of the relationship between the electric field application direction, the flat grinding direction, and the polarization axis of the polarizing plate. Fig. 6 is a plan view for explaining a structure of a matrix peripheral portion of a display panel. Figure 7 The left side is the gate signal terminal, and the right side is the explanatory diagram of the edge of the panel without external connection terminals. Fig. 8 is a plan view and a cross-sectional view showing an example of a structure in the vicinity of a connection portion between the gate electrode terminal G T M and the gate wiring G L. Fig. 9 is a plan view and a cross-sectional view showing an example of a structure near a connection portion between the drain terminal D TIM and the drain signal line D L. FIG. 10 is a plan view and a cross-sectional view showing an example of a structure near a connection portion of the counter electrode terminal C T M and the common bus line C B and the common voltage signal line C L. Figure 11 The matrix paper containing the active matrix color liquid crystal display device ifc standard is applicable to the national standard (CNS) 8 4 specifications (2Ι0χ 297 male f) (Please read the precautions on the back before filling out this page, 1T Ministry of Economy Printed by M Intellectual Property Cooperative of the Intellectual Property Bureau, 583479 Economic Langxi. ¾ Industrial Property Cooperative, Consumer Cooperative, Indo A7 ___B7 V. Circuit diagram of the (14) part of the invention and its surroundings. Figure 12 Active matrix color of the present invention The explanatory diagram of the driving waveforms of the liquid crystal display device. Figs. 13 and 13 are top views showing a state in which the driving circuit is mounted on the liquid crystal display panel. Fig. 14 shows the manufacturing steps of the substrate SUB 1 side. Fig. 15 shows the substrate SUB 1 side. FIG. 14 is an explanatory diagram of the subsequent steps of FIG. 14. FIG. 16 is a plan view showing a pixel of another embodiment of a liquid crystal display portion of an active matrix color liquid crystal display device. FIG. 17 is a view showing an active matrix color liquid crystal display. A top view of a pixel, which is another embodiment of the liquid crystal display portion of the device. FIG. 18 shows another embodiment of the liquid crystal display portion of the active matrix type color liquid crystal display device. A top view of a pixel. Fig. 19 shows a top view of a pixel in another embodiment of a liquid crystal display portion of an active matrix color liquid crystal display device. Fig. 20 shows another of a liquid crystal display portion of an active matrix color liquid crystal display device. A top view of a pixel in one embodiment. FIG. 21 shows a top view of a pixel in another embodiment of a liquid crystal display portion of an active matrix color liquid crystal display device. Embodiments and Effects of the Invention The present invention will be described below with reference to the drawings. The implementation form. Here is an example of the application of the present invention to an active matrix color liquid crystal display device. The paper scale is remotely used in China's standard (CNS) Λ4 specification (2 丨 0X 297) (please first (Read the notes on the back and fill out this page)

-17- 583479 Printed by Intellectual Property Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs A7 __________ B7 V. Description of Invention (15) In the following figures, the parts with the same function will be given the same symbol, and will not be repeated. [Embodiment 1] Planar structure of matrix section (pixel section) FIG. 1 is a plan view showing a pixel and its surroundings, one of the active matrix type liquid crystal display devices of the present invention. In the following, a thin film transistor (T F T) is used as an active matrix element, and a so-called thin film transistor type liquid crystal display device will be described. As shown in Fig. 1, each pixel is arranged on a gate signal line (scanning signal line or horizontal signal line) GL, a common voltage signal line (counter electrode wiring) CL, and two adjacent drain signal lines. (Image signal line or vertical signal line) In the intersection area of DL (in the area surrounded by four signal lines) ° All these signal lines are formed by opaque metal electrodes. The gate signal line G L and the common voltage signal line c L extend left and right in the first figure, and a plurality of them are arranged in the vertical direction. The image signal line D L extends in the up and down direction, and a plurality of pixel electrodes P X are arranged in the left and right direction. The pixel electrode P X is formed of a transparent conductive film I T0 and is electrically connected to the thin film transistor T F T (the source electrode S D 1) through a via. The counter electrode C T is also formed of I T0 and is electrically connected to the common voltage signal line C L. S D 2 is a drain electrode, and AS is a semiconductor layer. The pixel electrodes PX are slender electrodes each having a comb-like shape, each of which is vertically oriented in the first figure. The counter electrode CT is made of transparent electrodes. The size of the ifc on the paper is in accordance with Chinese National Standards (CNS) 8 · 4 ^ (210: < 297). (Please read the precautions first.) (Fill in this page again)

-18-583479 A7 B7 ^ _ —-------- 一 ~ '15. Explanation of the invention (16) The electric field generated between each pixel electrode PX and the counter electrode CT controls the optics of the liquid crystal composition LC Status, control display. (Please read the precautions on the back before filling this page) Gate signal line GL is a thin film transistor T F. T used to transmit the gate signal to each pixel, and drain signal line DL is used to pass a thin film transistor TFT The (drain electrode SD 2) supplies a drain signal voltage to the pixel electrode of each pixel, and the common voltage signal line CL is used to supply a common voltage to the counter electrode CT of each pixel. The above-mentioned common voltage signal line CL formed by a metal electrode is formed to surround the drain signal line DL, and also serves to prevent unnecessary light leakage near the drain line due to the influence of the electric field generated by the potential of the drain electrode. Its shading layer. The electrode width W and the electrode interval L of the comb-shaped pixel electrode P X depend on the liquid crystal material used. This is because the electric field strength that achieves the maximum transmittance varies depending on the liquid crystal material. The electrode interval is set according to the liquid crystal material, so it is set according to the withstand voltage of the used drain signal drive circuit (signal side driver). The maximum amplitude range results in the maximum transmission. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs a; Industrial Consumers Cooperative F. The width of the pixel electrode is set to 1 to 15 micrometers. In consideration of the aperture ratio and electrode Z productivity, it is set to 4 micrometers in this embodiment. In addition, the electrode interval L is set to 1 to 10 micrometers, and in order to make the driving voltage be 10 volts or less, the present invention is set to 4 micrometers or less. Cross-sectional structure of the matrix portion (pixel portion) FIG. 2 is a cross-sectional view taken along the π-n cross-section of FIG. 1 and FIG. 3 is a cross-sectional view of the thin-film transistor τ ρ T taken along the ΓΠ-ΙΠ line of FIG. 1. This paper size applies to China National Standards (CNS) / \ 4 specifications-L -19- 583479: Printed on A7 _____B7 printed by Liqi Langji Bi Shi Ling Industrial Co., Ltd. V. Description of invention (17) 4 photos It is a sectional view of the storage capacitor cstg forming portion taken along the line IV-IV in FIG. 1. As shown in Figures 2 to 4, the thin film transistor TFT, storage capacitor C stg, and electrode group are formed on the lower transparent glass substrate su B 1 side based on the liquid crystal composition layer (hereinafter referred to as liquid 1¾) LC, and the upper part is transparent. A color filter FIL and a black matrix pattern BM for light shielding are formed on the glass substrate SUB 2 side. In addition, a liquid crystal alignment control layer that controls the initial alignment of the liquid crystal, that is, alignment films OR 1 1 and OR 12 is provided on each inner (liquid crystal LC side) surface of the transparent glass substrates S U B 1 and S U B 2. The transparent glass substrates S U B 1 and S U B 2 are provided with polarizing plates p01 and P2 on each outer surface. As shown in Tables 2 to 4, in this embodiment, the counter electrode C T covered with I D 0 is on the same layer as the gate signal line GL, and the pixel electrode P X of comb I T0 is formed on the signal Structure on protective insulation film PSV on line DL. Therefore, in the cross-sectional view, P X and C T are sandwiched between the gate insulating film GI and the protective insulating film PSV, which is formed as a storage capacitor C stg ο the common signal line CL is in contact with the counter electrode C D in the same layer . The gate insulating film G I and the protective insulating film p S V may be formed of S 102 or S i, · N y. In addition to the structure of the pixel electrode and the counter electrode in FIG. 2, as shown in FIG. 20, the pixel electrode ρ X may be filled with IT0. (This page) • Taste, \ 一 5 ¥ The size of this paper is applicable to the Chinese National Standard (CNS) Λ4 specification (2Ι0χ 297 public waste) -20- 583479 B7 · V. Description of the invention (18) Counter electrode CT The protective insulating film P SV 2 is disposed on the pixel electrode PX. (Please read the precautions on the back before filling in this page) T F T Substrate The structure of the lower transparent glass substrate S U B 1 side (T F T substrate) is explained in detail below.

Thin film transistor T F T Figure 3 is a sectional view of a thin film transistor. In the thin film transistor T F T, when a positive bias voltage is applied to the gate electrode G, the channel resistance between the source and the drain becomes smaller. When the bias voltage is zero, the channel resistance becomes larger. As shown in Figure 3, the thin-film transistor TFT has a gate electrode GT, an insulating film GI, and an i-type (original, intrinsic, undoped dopant that determines the conductivity type) amorphous silicon (S i). i-type semiconductor layer AS, a counter electrode (source electrode SD1, drain electrode SD2). The source electrode SD 1 and the drain electrode SD 2 are originally determined by the bias polarity therebetween, and the circuit of the liquid crystal display device is reversed in polarity during operation, so it should be understood that the source electrode SD 1 and the drain electrode The electrode SD 2 is interchanged during operation. However, in the following description, for convenience, one of them is a source electrode and the other is a drain electrode. Gate electrode G D The gate electrode GT is formed to be connected to the gate signal line GL, and a part of the gate signal line G L is configured as a gate electrode GT. The size of the gate electrode is in accordance with the Chinese National Standard (CNS). Λ4 is now available (2 丨 OX 297) -21-5 ^ 3479 A7 B7 V. Description of the invention (19) Outside the active area of the GT thin film transistor TFT Part of it. In this embodiment, the gate electrode G T is formed of a single-layered conductive film g 丨. The conductive film g 1 can be, for example, a chromium-molybdenum alloy (U it-Mo) film formed by sputtering, but is not limited thereto. It is also possible to form two metals of different metals.

Gate signal line G L The gate signal line G L is composed of a conductive film g 1. The conductive film g 1 of the gate signal line G L is formed in the same manufacturing step as the conductive film g 1 of the gate electrode G T and is integrally formed. The gate signal line G L is used to supply a gate voltage V G to the gate electrode G T from an external circuit. In this embodiment, the conductive film g 1 may be, for example, a chromium-molybdenum alloy (C r-Mo) film formed by sputtering. · Also, the material of the gate signal line GL and the gate electrode G T is not limited to a chromium-molybdenum alloy, but may also be, for example, aluminum or an aluminum alloy for reducing resistance, which is covered with a double-layer structure of chromium-molybdenum .

The common voltage signal line C L The common voltage signal line C L is composed of a conductive film g 1. The conductive film g 1 of the common voltage signal C L is formed in the same manufacturing step as the gate electrode G T, the gate signal line G L, and the conductive film g 1 of the counter electrode, and is integrally formed with the counter electrode C T. By the common voltage signal line CL, a common voltage V c 0 m can be supplied from an external circuit to the counter electrode c T. This paper size applies the Chinese National Standard (CNS) / W specifications (210 X 297 revolutions) (Please read the precautions on the back before filling out this page) · #, νά -22- 583479 A7 V. Description of the invention (20) The material of the common voltage signal line CL is not limited to a chromium-molybdenum alloy, but also can be coated with aluminum or an aluminum alloy to form a double-layer structure in order to reduce the resistance.

Insulating film G I The insulating film GI is a thin film transistor TFT, which is a gate insulating film applied to the gate electrode G T and the semiconductor layer AS to apply an electric field. The insulating film G I is formed on the gate electrode G T and the gate signal line G L. The insulating film G I can be, for example, a silicon nitride film formed by plasma C V D to form a thickness of 100 nanometers to 4 micrometers (about 350 nanometers in this embodiment). In addition, the insulating film G I is also used as an interlayer insulating film of the gate signal line G L and the common voltage signal line C L and the drain signal line D L to give it an electrical insulation effect.

The i-type semiconductor layer A S is formed by a crystalline silicon semiconductor to a thickness of 15 nm to 250 nm (in this embodiment, it is about 120 nm). The layer d 0 is an N (+) -type amorphous semiconductor layer doped with phosphorus (P) for resistance contact, and a type 1 semiconductor layer AS exists on the lower side, and only the conductive layer d 1 remains on the upper side. The type 1 semiconductor layers A S and d 0 are also provided between the gate signal line G L and the intersection (cross-over portion) of the common voltage signal line C L and the drain signal line D L. The i-type semiconductor layer A S at this intersection reduces the paper size. The paper size applies the Chinese National Standard (CNS) Λ4 specification (2 丨 0 > < 297 mm). (Please read the precautions below and fill in itT page)

-23-583479! You 丨 Cai ί ί: ν Α7 ____ Β7__ 5. Description of the invention (21) The gate signal line G L of the fork and the opposite voltage signal line C L and the drain signal line D L are short-circuited. The source electrode S D 1 and the drain electrode S D 2 are each composed of a conductive film d 1 that is in contact with the N (+) type semiconductor d 0. Because the C r-Mo film has low stress, it can form a relatively thick film, which helps to reduce the resistance of the wiring. In addition, the C r -M ◦ film also has good adhesion to the N (+) -type semiconductor layer d 0.

Drain signal line D L The drain signal line D L is formed on the same layer as the source electrode S D 1 and the drain electrode S D 2. The drain signal line D L is integrally formed with the drain electrode SD2. In this embodiment, the conductive film d 1 is a chromium-molybdenum alloy (Cr-Mo) film formed by sputtering. The thickness of the Mo film is 50 nm to 300 nm (about 250 nm in this embodiment). The Mo film has low stress. A thicker film can be formed to help reduce the resistance of the wiring. In addition, the Cr-Mo film also has good adhesion to the N (+) type semiconductor layer do. In addition to the Cr-M0 film, the conductive film d1 can also use other high-melting-point metal (M0, Ti, Ta, and W) films, and high-melting metal sand compounds (M0S2, T2S1, T2). T a S i 2, WS i 2) film can also form a laminated structure with aluminum. The storage capacitor C stg forms the conductive film I TO 2 of the storage capacitor C stg, which forms the paper. The standard is applicable to the Chinese National Standard (CNS) 8 4 specifications (2 丨 〇X 297). (Please read the precautions on the back first. (Fill in this page) -24- 9 47 3 8 5 Intellectual Property Bureau of the Ministry of Economic Affairs a; Industrial and Consumer Cooperatives printed A7 B7 V. Description of the invention (22) It overlaps with the conductive film IT〇1 forming the counter electrode CT. This overlap, as can be seen from FIG. 2, constitutes a storage capacitor (static capacitance element) C s t g between the pixel electrode PX and the counter electrode CT. The dielectric film of the storage capacitor C s t g is composed of a protective film p s V and an insulating film G I used as a gate insulating film of the thin film transistor T F T. As shown in FIG. 4, the storage capacitor Cstg on the plane is formed as an overlapping portion of the pixel electrode PX and the counter electrode CT in the pixel.

Protective film PSV Thin film transistor FT is provided with a protective film PSV. The protective film P s V is mainly designed to protect the thin film transistor T F T from moisture and the like. It is a film with high transparency and good moisture resistance. The protective film P S V is made of, for example, a silicon oxide film or a silicon nitride film formed by a plasma C V D device, and has a film thickness of 0.1 μm or more and 1 μm or less. The protective film PS V is partially removed to expose the external connection terminals DTM and GTM. The relationship between the protective film P S V and the thickness of the insulating film G I is that the former should be made thicker when the protection effect is considered, and the latter should be made thin when the mutual conductivity g of the transistor is considered. The protective film P S V may have a layered structure of a thick film having an organic film such as polyimide of 2 μm to 3 μm.

Pixel electrode PX Pixel electrode PX is formed by a transparent electrical conductor IT0, which is compatible with the Chinese National Standard Apple (CKS) 8 4 specification (210 X 297 cm) on the same paper scale " ~ -25- (Please read the back first (Notes to fill out this page)

583479 A7 B7 V. Description of the invention (23) Please read the notes on the back 1¾ and then. Fill out this page I T ◦ The storage capacitors are formed between the counter electrodes CT formed. In this embodiment, I ΊΓ ◦ is used as a transparent conductor for illustration, but it is needless to say that the same effect can be obtained by using indium-zinc-oxide (I Z0).

Counter electrode C T The counter electrode c T is formed by I T 0 and is connected to the same layer as the common voltage signal line c L. The counter electrode CT is configured so that a common voltage V c 〇m is applied. In this embodiment, the common voltage V c om is set to the lowest-order driving voltage V dmi η and the highest-order driving voltage applied to the drain signal DL. The intermediate DC potential of V dma X is a lower potential to the extent that the feed-through voltage Δ V s generated by the thin-film transistor element TF D is turned off. This embodiment is described using I T0 as a transparent conductor, but it is needless to say that the same effect can be obtained by using indium-zinc-oxide (I Z0). Color filter substrate Next, return to Figures 1 and 2 to explain the structure of the transparent glass substrate on the upper side, the Ministry of Economic Affairs, Intellectual Property Office, Property Bureau a, and the S U B 2 side (color filter substrate). The light-shielding film B Μ is located on the upper transparent glass substrate SU Β 2 side, as shown by the thick line BM boundary line in Fig. 1, and the gap portion (the gap other than the pixel electrode ρ X and the counter electrode C T) is never desired. ) The penetrating light is emitted to the display surface side to form a light-shielding film BM (so-called black matrix) without lowering contrast and the like. This paper size applies the Chinese National Standard (CNS) Λ4 specification (210X 297 cm) -26- A7 B7 ^ — ____—- I. 丨, 丨 · V. Description of the invention (24) The light-shielding film BM does not make the outside The light or backlight does not enter the i-type semiconductor layer. That is, the light-shielding film BM above and below the i-type semiconductor layer AS of the thin-film transistor TFT and the larger electrode G T (Fig. 3) are sandwiched so that the external natural light and backlight cannot reach. The light-shielding film BM shown in FIG. 1 shows only those attached to one pixel, but in fact, it is formed at each pixel, and the opening is on the inside. The pattern is an example. The direction of the electric field of the comb-shaped electrode is chaotic, because the display of this part corresponds to the image information in the pixel, and it is black when it is black and white when it is white. It can be used as part of the display. Among them, the light-shielding film BM cannot be shielded from light. In particular, the gap between the pixel electrode P X and the counter electrode C T must be at least 3 in order to suppress crosstalk (longitudinal blurring) in the direction of the drain signal line. \ The light-shielding film BM can be formed of a conductive metal such as Cr, but it is better to form an insulating film that does not affect the electric field between the pixel electrode PX and the counter electrode CT. Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Xiaoxian Cooperative, printed bismuth. In this example, a black organic pigment was mixed into the resist material to form a thickness of about 1.2 microns. In order to improve the shielding property against light, the carbon black and titanium oxide (· ding ix〇y) can be maintained in a range of 10 ohm · cm or more without affecting the electric field in the liquid crystal composition layer. ) Mix in. In addition, since the light-shielding film BM divides the effective display area of each line, it has the effect of making the outline of the pixels of each line clear. Light-shielding film] The peripheral parts of gM are framed into a frame shape, and the bars are the same as the pattern of the matrix part shown in the first | amount | even the paper and the scale are applicable to the Chinese National Standard (CNS) Α ^ Γ ("() > < 297 public money) -27-583479 A7 _________B7 V. Description of Invention (25) Continued to form. f Please read the caution on the back first, save this page) The light shielding film BM in the peripheral part is extended to the outside of the sealing part sl (refer to Figure 7) to prevent the leakage of reflected light, etc. caused by the mounting machine of a personal computer, etc. Light intrudes into the matrix portion and prevents light from a backlight or the like from leaking out of the display area. On the other hand, the light shielding film B M is left about 0.3 mm to 1.0 mm from the edge of the substrate s U B 2 to avoid the cutting area of the substrate S u B 2.

Color filter F I L The color filter F I L repeatedly forms red, green, and blue lines at the opposite positions of the pixels. The color filter F I L is formed so as to partially overlap the light-shielding film B M. The color filter F I L can be formed as follows. First, a colored base material such as an acrylic resin is formed on the surface of the upper transparent glass substrate SUB2, and the colored base material outside the area where the red filter is formed is removed by a photolithography technique. It is printed by Xiao Gong Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs, and then the colored substrate is colored with a red pigment and cured to form a red filter R. Next, the same steps are performed to sequentially form a green filter G and a blue filter B. And dyeing can be used for coloring. Top coating film OC. The top coating film OC is designed to prevent the color material of the color filter F I L from leaking to the liquid crystal composition layer LC, and to flatten the height of the color filter F I L and the light shielding film BM. This paper size is applicable to China National Standard (CNS) 8-4 specifications (2 丨 0 X 297 cm) -28- 583479 A7 ^ V. Description of the invention (26) Top coating film 0C is made of, for example, acrylic resin, ring It is made of transparent resin material such as oxygen resin. Alternatively, an organic film such as polyimide having good fluidity may be used as the top coat film. Liquid crystal layer and polarizing plate Next, a liquid crystal layer, an alignment film, a polarizing plate, and the like will be described. The liquid crystal layer liquid crystal system uses a molecule with a dielectric anisotropy Δ ε of negative, whose 値 is 4.0, and a refractive index anisotropy Δ η of 0.1 0 0 (589 nm, 20 ° C). Liquid crystal molecular nematic liquid crystal with difluorobenzene structure inside. In addition, it can be a liquid crystal containing liquid crystal molecules with a dicyanobenzene structure in the molecule, and a liquid crystal containing liquid crystal molecules with a difluorobenzene structure in the molecule. Liquid crystals of liquid crystal molecules with a dicyanobenzene structure, liquid crystals containing liquid crystal molecules with a monocyano group in the molecule, or liquid crystal molecules with a difluorobenzene structure in the molecule and monocyanine in the molecule Liquid crystal molecules of liquid crystal molecules with a cyclohexane structure. The liquid crystal is not limited to the above composition, and only liquid crystal having a negative dielectric anisotropy may be used. The thickness (gap) of the liquid crystal composition layer is 3.0 micrometers, and the damping Δ η · d is 0.3 micrometers. The following alignment film is combined with the polarizing plate, and the liquid crystal molecules are rotated from the initial orientation direction to the electric field direction by 45. The maximum transmittance can be obtained at this time, and almost no wavelength-dependent transmission in the visible range can be obtained. In addition, the thickness (gap) of the liquid crystal composition layer is applied in a vertical orientation. The paper size applies the Chinese National Standard (CRS) A4 specification (2 丨 0X 297 mm ^ 7 '' 583479 A7 _ B7 V. Description of the invention (27) Controlled polymer beads. With this, the orientation of the liquid crystal molecules around the beads during black display can be stabilized to obtain a good black level, and the contrast can be improved. In addition, the specific resistance of the liquid crystal is 1 · 〇 X 1 0 1 ohm · Above 1.0 cm 1 × 2 1 ohm · Below cm (5.2 X 1 〇1 1 ohm · cm in this embodiment). In this way, even if the resistance of the liquid crystal is low, the pixel can be fully charged. The voltage between the electrode and the counter electrode. Its lower limit is: [.〇X 1 〇9 ohm · cm, more preferably 1. 〇X 1 0 1 ^ ohm · cm. This is achieved by the pixel electrode and the counter electrode. The electrodes are formed on the same substrate. If the resistance is too high, the static electricity introduced during the process is not easy to relax, so it should be 1. OX X 1 0 1 or less, more preferably 1. OX X 1 0 1 2 ohm · cm or less. Alignment film Alignment film ORI polyimide. Initial orientation The RDR is made parallel to the upper and lower substrates. The method of giving the initial orientation direction is the most common method of flat grinding, and there is oblique vapor deposition. The employee of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed the initial orientation direction RDR and the direction of the applied electric field The relationship between EDRs is shown in Fig. 5. In this embodiment, the initial orientation direction RDR is about 75 ° with respect to the horizontal direction. In addition, in the structure of this embodiment using negative dielectric anisotropy, the initial orientation direction The angle formed by the RDR and the applied electric field direction EDR must be above 45 ° and less than 90 °. The thickness of the alignment film is from 20nm to 300nm (in this embodiment, it is about Qqnm). Polarized light The paper size of the paper is applicable to the Chinese National Standard (CNS) Λ4 specification (210 X 297 cm) 583479 A7 ____B7 __ V. Description of the invention (28) Polarizing plates P0L 1, P0L 2 are conductive polarizing plates, The polarizing light transmission axis μ AX 1 of the upper polarizing plate POL 1 is aligned with the initial orientation direction RDR, and the polarizing light transmitting axis MAX 2 of the lower polarizing plate P0l 2 is orthogonal to it. The fifth relationship is shown. With this, the image applied to the present invention When the voltage (voltage between the pixel electrode PX and the counter electrode CT) is increased, a normally-closed characteristic with increased transmittance can be obtained. That is, high-quality black display can be performed when no voltage is applied. However, in this embodiment, because The polarizing plate has conductivity to cope with poor display caused by external static electricity and ΕΜΙ. As for conductivity, if it is only to deal with the influence of static electricity, the form resistance should be below 103 ohms / □, and it is appropriate to deal with ΕΜΙ Below 104 ohms / □. In addition, the backlight (the surface to which the polarizing plate is adhered) on the sandwiched surface of the liquid crystal composition of the glass substrate may be provided with a conductive layer. Structure around the matrix Xiao Gongxiao, Co., Ltd. of the Ministry of Economy, Intellectual Property, and Cooperative Co., Ltd. Printed Bismuth Figure 6 is a plan view showing important parts around the matrix (AR) of the display panel P N L including the upper and lower glass substrates SUB 1 and SUB 2. Fig. 7A shows a cross-section near the external connection terminal G T M connected to the scanning circuit, and Fig. 7 B shows a cross-section near the seal portion when there is no external connection terminal. In the manufacture of this panel, if the size is small, it is to increase the output. It is processed on a glass substrate at the same time to process many components and then divided. If the size is large, because of the shared manufacturing equipment, any type of glass substrate has been standardized after processing. Cut to fit the size of each variety. In either case, the glass is cut after a series of steps. Sections 6 and 7 of this paper are in accordance with the China National Standards (CNS) Λ4 specification (210X29 * 7mm) 583479 A7 ____B7 V. Description of the Invention (29) The latter is shown as an example. Figures 6 and 7 are shown after cutting Upper and lower substrates SUB 1, SUB 2. LN in Fig. 6 is the edge of the substrate before cutting. Regardless of the completion state, the size of the upper substrate s UB 2 is limited to the inner side of the lower substrate SUB 1 so that the external connection terminal group includes g, T d, and terminals C and M (the upper side of FIG. 6). And on the left). The terminal groups T g and T d are each integrated with the integrated circuit chip C 因 due to the following scanning circuit connection terminals G and M, the drain fg circuit connection terminal d T M, and the output wiring sections. The unit of tape carrier package T C P (refer to FIG. 13) of I (refer to FIG. 13) is named 〇 The wiring from each matrix group to the external terminal part is inclined toward the two ends. This is to combine the terminals D D and G D of the display panel P N L with the arrangement pitch of the package T C P and the connection terminal pitch of each package D C ρ. The counter electrode terminal CT is a terminal that applies a common voltage to the counter electrode CT from an external circuit. The common voltage signal line of the matrix part ◦ l is connected from the opposite side (right side of Fig. 6) of the scanning circuit terminal G T M. The common voltage signal lines are integrated with the common bus line C Β and connected to the pair. To the electrode terminal C TM. Between the transparent glass substrates S U B 1 and S U B 2 along their edges, a sealing pattern s L is formed to seal the liquid crystal LC, except for the liquid crystal sealing inlet I N J. The sealing material is made of, for example, epoxy resin. The layers of the alignment films 0 R I 1 and 0 I I 2 are formed inside the seal pattern s L. Cut 7 facets W CNS) Δ view; IM 2 丨 GX297 go to the public) *-~ (Please read the note on the back first Jim write this page printed by Xiao Gong Consumer Cooperative, Intellectual Property Bureau of the Ministry of Economy ---, 1 ] ------ Shao ---------------- 583479 A7 ——___ B7__ V. Description of the invention (30) Polarizing plates POL 1, P0L2 are each formed in the lower part The transparent glass substrate UB1 and the outer surface of the upper transparent glass substrate SUB2. The liquid crystal L c is enclosed between the lower alignment film QRI 1 and the upper alignment film ORI 2 which set the direction of the liquid crystal molecules to seal the divided area of the pattern SL. The lower alignment film ORI 1 is formed above the protective film p SV on the lower transparent sloped glass substrate SUB 1. The liquid crystal display device is attached to the lower transparent glass substrate su B 1 side, and the upper transparent glass substrate SUB 2 side is individually stacked. These layers form a sealing pattern SL on the substrate S ϋ B 2 side, and the lower transparent glass substrate SU Β 1 and the upper transparent glass substrate s U Β 2 are stacked. Then, the liquid crystal is injected from the opening IN j of the sealing material s L to The injection port is sealed with 1 NJ of epoxy resin, etc., and the upper and lower substrates are cut and assembled. The explanatory diagram of the connection structure of the gate signal line g L to the external connection terminal G T M. Fig. 8a is a top view, and Fig. 8B shows a cross section of line B-B in Fig. 8A. The cargo and consumer cooperatives are printed. Figure 8 corresponds to the lower left corner of Figure 6. The oblique wiring is shown as a straight line for convenience. In the figure, C r -M 0 layer g 1 is easy to identify. Slash. The gate electrode G T M is a transparent conductive layer IT used to protect its cr-μ layer g 1, especially its surface, and to improve the reliability of the connection with Ding CP (Tape Carrier Packaging). 〇1 constitution. The transparent conductive layer IT〇1 is a transparent conductive layer I τ〇. Such as the first wood paper ^ 1 degree Shizhou Chinese National Standard (〇 milk) 8 4 specifications (210 > < 297 public ·) 583479 A7 B7 V. Description of the invention (31) 8 As shown in Figure B, the insulating film GI and protective film PSV are formed on the right side of the same figure, and the left end + GT Μ is exposed from the insulating GI and the protective PSV. The external circuit is in electrical contact. Figure 8 shows only a pair of the gate line GL and the gate terminal GT Μ, which actually constitutes For this pair, there are a large number of terminal groups τ g side by side (refer to Fig. 10). The gate terminal GT Μ is not at the left end. It is a short-circuit wiring S Η g that extends beyond the cutting area of the substrate during the manufacturing process. (Shown) short-circuit. The short-circuit with the short-circuit wiring SH g is used to prevent static damage during the flat grinding of the alignment film ORI 1 during the manufacturing process. Drain Terminal D T M FIG. 9 is an explanatory diagram illustrating a connection structure from the drain signal line D L to its external connection terminal DTM. Figure 9A illustrates its plane, and Figure 9B illustrates a cross section taken along line B-B of Figure 9A. The ninth figure corresponds to the upper right vicinity of the sixth figure. For convenience, the direction of the figure has changed, and the right direction corresponds to the upper end of the substrate SUB1. The externally connected drain terminal DT Μ printed by the goods and workers' cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is arranged in the up-down direction, and the drain terminal D T Μ constitutes a terminal group T d as shown in FIG. It is longer than the cutting line of the substrate SU Β1. The drain terminal D T M is extended beyond the cutting area of the substrate during the manufacturing process. In order to prevent electrostatic damage during the manufacturing process, all of them are short-circuited with short-circuit wiring S H d (not shown). The drain connection terminal D T M is formed with a transparent conductive layer I T〇1 and is connected to the drain signal line DL at a removed portion of the protective film PSV. The transparent conductive film I TO 1 is the same as the gate electrode GTM. The transparent conductive film is used. The paper size is in line with the Chinese National Standard (CNS). Λ4 is standard (210X 297 cm). 583479 A7 B7 5. Description of the invention (32) I TO . The connection wiring from the matrix portion to the drain terminal portion DTM is constituted by a layer d1 at the same level as the drain signal line DL. (Please read the cautions on the back first. The counter electrode terminal CT Μ on this page. Figure 10 is an explanatory diagram of the connection structure from the common voltage signal line CL to its external connection terminal CTM. Figure 10A 1 0B illustrates the cross section of the B-B cutting line in FIG. 10A. The first figure] _〇 corresponds to the upper left near the sixth figure. Each common voltage signal line CL system is connected to the common bus line CB and is connected to the opposite side. To the electrode terminal CT M. The common bus line CB is laminated on the conductive layer g 1 with a conductive layer g 3 (not shown), and the transparent conductive layers IT0 1 and -0 are used to electrically connect them. This is In order to reduce the resistance of the common bus line CB, the common voltage can be fully supplied to each common voltage signal line CL from an external circuit. The feature of this structure is that the resistance of the common bus line can be reduced without the need of an additional conductive layer. Cai / 1 Bureau Xiao Gong eliminates bones and cooperates with the seal electrode counter electrode CT M, which constitutes the conductive layer g 1 with a transparent conductive layer IT01 superimposed. The transparent conductive film IT01 is the same as other terminals Transparent conductive film IT〇. The transparent conductive layer IT〇1 is durable It is better to cover the conductive layer g1 to protect the surface from electric erosion, etc. In addition, the connection between the transparent conductive layer IT01 and the conductive layer gl and the conductive layer dl is to form a layer that passes through the protective film Ps V and the insulating film GI. Through the hole to achieve conduction. Η. N'r Ρ / 1 &·; m lb Ι. \ Ί ΙΛΊ () A -d-ili '·} κ (n \ () V? Q7A ΰτ) 583479 A / B7 Description of the invention (33) The entire equivalent circuit of the display device is shown in the matrix section of the equivalent circuit and its peripheral circuit wiring diagram in Figure 11. This figure is both a circuit diagram and the actual geometric configuration drawing. Most pixels It forms a two-dimensional array. In Fig. 11, X refers to the drain signal line DL, and the words G, B, and R are assigned corresponding to the green, blue, and red pixels. Y refers to the gate signal line GL The plus words 1, 2, 3, ... end are assigned in the order of the scan timing. The gate signal line Y (the plus word is omitted) is connected to the vertical scanning circuit V, and the drain signal line X (the plus word) (Omitted) is connected to the drain signal drive circuit. SUP is a voltage circuit for obtaining a majority of the divided voltage-stabilized voltage source from a voltage source and converting The circuit for displaying information for the C R T (cathode ray tube) from the host computer (high-order arithmetic processing device) is the display information for the T F ΊΓ liquid crystal display device. Please read the meaning of the back

Master% This page Page I Order Printed by the Ministry of Economic Affairs, Intellectual Property Office, Zhengong Consumers Cooperative, Driving method Chapter 12 shows the driving waveforms of the liquid crystal display device of this embodiment. The gate signal V G is turned on during each scan, otherwise it is turned off. The drain signal voltage VD is inverted at each pixel with an amplitude twice as high as the voltage to be applied to the liquid crystal layer, and is transmitted to one pixel to be applied here. Reverse polarity line by line. As a result, the pixels with polarity inversion are adjacent to each other (batch inversion driving), which can reduce the occurrence of flicker and crosstalk (blurring). The paper ft scale is the state China Standard (CNS) 8-4 specification (2) 0X 297 male) 583479 A7 B7 V. Description of the invention (34) In addition, the common voltage Vc is set to be reversed from the polarity of the drain signal voltage The center voltage is lower by a certain amount of voltage. This is to correct the feed-through voltage generated when the thin-film transistor TFT changes from power-on to power-off, and can be applied to the liquid crystal with an AC voltage VLC with a small DC component. The reason). The panel P N L and the driving circuit substrate P C B 1 are views in plan view showing a state where the drain signal driving circuit Η and the vertical scanning circuit V are connected to the display panel P N L shown in FIG. 6 and the like. C Η I is a driving IC chip driving the display panel P N L (the bottom 5 are driving IC chips on the vertical scanning circuit side, and the left 10 are driving IC chips on the drain signal driving circuit side). TC P series drive IC chip C Η I is a tape carrier package constructed by the tape and tape automatic bonding method (TA Β). PC Β 1 is a drive circuit substrate with TCP, capacitors, etc., divided into drains. There are two parts for signal driving circuit and gate signal driving circuit. The staff of the Zhizhan Property Bureau of the Ministry of Economic Affairs, the Consumer Goods Cooperatives Co., Ltd. F G P is a frame ground wire pad. The spring-shaped fragments cut out of the notch in the sealed housing s H D are fixed with solder. F C is an electrically connected flat cable used for the driving circuit substrate P C Β 1 on the lower side and the driving circuit substrate p c Β 1 on the left side. The flat cable F C is formed by sandwiching a plurality of wires (phosphor bronze tin-plated) with a strip-shaped polyethylene layer and a polyvinyl alcohol layer as shown in FIG. 13. This paper size is applicable to China National Standard (CNS) A4 specification (2ΙΟχ 297 cm) 583479 A7 B7 5. Description of the invention (· 35) Manufacturing method Secondly, the substrate s UB 1 side of the liquid crystal display device will be described with reference to Figures 14 and 15 Of manufacturing methods. In Figs. 14 and 15, the central step is abbreviated, and the left side is the thin film transistor τft shown in Fig. 3, and the right side is the processing flow seen in the cross-sectional shape near the gate terminal shown in Fig. 8. Steps A to F are distinguished according to each lithographic process, and any cross-sectional view of each step shows that the processing is terminated after the lithographic process and the photoresist is removed. However, lithographic processing refers to a series of operations from the application of a photoresist to the development of a photoresist using selective exposure. The following is to avoid repetition, and steps A to C are described with reference to Figure 14: and steps D to F are described with reference to Figure 15

(a) Step A Printed on the lower transparent glass substrate SUB 1 made of AN 6 3 5 glass (trade name) by the Goods & Consumers Cooperative of the Ministry of Economy and the Property Bureau, and set the film thickness to 100 angstroms by sputtering. The conductive film formed by IT0 is D01. After the lithography process, the ΗBr solution was used as the selective etching of the conductive film I but 〇1. This forms the counter electrode C D.

(13) Step B Next, a conductive film g 1 made of C r with a film thickness of 200 nm is set with a base ore. After the photolithography process, the selective etching of the conductive film g 1 was performed using the ammonium nitrate nitrate. The gate electrode, the gate signal line GL, and the common voltage letter paper are used to form the Chinese national standard (CNS) Λ4 (2 丨 〇 > < 297 male) 583479 A7 B7 V. Description of the invention ( 36) Line CL, the gate terminal G ΊΓ Μ, the first conductive layer of the common bus line CB, the first conductive layer of the counter electrode terminal CTTM1, and the bus line SH g connected to the gate terminals G and M (not shown) ). Here, the electrode material is not limited to C r, and M o, T J :, T a, W, etc. may be used, and these alloys may also be used. (c) Step C ^ Ammonia, silane, and nitrogen are introduced into the plasma C V D device, and a silicon nitride film with a thickness of 350 nm is set. After introducing silane gas and hydrogen into the plasma CVD apparatus and setting a type 1 amorphous Si film with a film thickness of 120 nm, introduce a phosphine gas into the plasma CVD apparatus with a film thickness of 30 nm and N (+ ) Type amorphous Si film. After the lithography process, dry etching gases S F 6 and C C _1 4 are used for selective etching of the N (+) -type amorphous S 1 film and the i-type amorphous S i film to form an island of the i-type semiconductor layer AS. (d) Step D; printed by the poverty alleviation cooperative of the staff of the Zhizhan Property Bureau of the Ministry of Economic Affairs, a conductive film d 1 made of C r with a film thickness of 30 nm is formed by sputtering. = After the photolithography process, the conductive film d 1 is etched with the same liquid as in step B to form the first conductive layer of the drain signal line DL, the source electrode SD 1, the drain electrode SD 2, and the common bus line CB 2, And the bus line SH d (not shown) that short-circuits the drain terminal DT Μ. Here, the electrode material is not limited to C r, but can be used as M o, T i, T a, W, etc. These alloy papers & sizes have passed the National Park National Standard (CNS) Λ4 specification (210X297 cm) 583479 A7 B7 V. Description of the invention (37) Secondly, CC 1 4 and SF 6 are introduced into the dry etching device, and the N (+) type amorphous Si film is removed by etching, and the N (+) between the source and the drain is selectively removed. Type semiconductor layer do. After the conductive Ife d 1 is patterned in the main pattern, the conductive film d 1 is used as a mask to remove the N (+) type semiconductor 餍 d0. That is, the conductive film d 1 remaining on the Z-type (S) semiconductor layer ¾ layer A.S and the conductive film d 1 of the Z N (+)-type semiconductor layer ^ M is not divided by the "F" pair. At this time, since the n (+) type semiconductor layer do is etched to remove the entire thickness, the etching time can be controlled to how much the surface portion of the type 1 semiconductor layer AS is etched away. (e) Step: Introduce ammonia gas, silane gas, and nitrogen gas into the plasma C V D device, and set a nitride film Si with a thickness of 0.4 micrometers. After the photolithography process, the Si film is selectively etched with dry etching gas S F 6 to pattern the protective film p s v and the insulating film G I.

(f) In step F, a conductive film I T〇2 having a film thickness of 12 nm and 12 nm is set by i-plating. After the lithography process, the ΗBr solution was used as the selective etching of the conductive film I τ〇2. Thereby, a pixel electrode P X is formed. Dissociative dopant This embodiment is characterized in that 1,000 p p m of 2,5-dimethylphenol is added to the host liquid crystal. The specific resistance of the main liquid crystal is the surface of the paper. The standard is applicable to the Chinese National Standard (CNS). Λ4 is now available (2 丨 0/297). (Read the note on the back and read the S-item page), \ = 0 Ministry of Economic Affairs Printed by the Consumer Affairs Cooperative of the Property Bureau -40-A7 B7 i 'Explanation of the invention (38) 1 · 9 x 1 Ο 1 3 ohm · cm, N I point M 7 plus 2,5-dimethylphenol of the following structural formula After that, it becomes 5 · 2 X 1 0 1 1 ohm · cm. The N-Liquid crystal of this liquid crystal is almost the same, which is 7 0 · 4T :. ° C. Adding points and adding before

OH H3c

CH 3 (please read the back item first, then pay attention to this page, and then ^ Γ this page) — Install too. 2, 5 — Dimethylphenol, and the dissociative dopant in this example is acidic dissociated substance or alkaline Dissociated substances, which are automatically dissociated in polar solvents to produce Η ® liu, or react with water to produce 0Η Θ ions. Specifically, it refers to a substance such as a carboxylic acid (containing an anhydride), an amide, an amine, or an alcohol. When such a substance is added to the liquid crystal, the ion concentration in the liquid crystal increases, and the specific resistance decreases. When the display quality of the liquid crystal display device of Example 1 of the present invention was evaluated, it was confirmed that a high-quality display can be seen with few occurrences of afterimage defects. [Embodiment 2] Embodiment 2 of the liquid crystal display device according to the present invention is the same as Embodiment 1 except that the amount of dopant added is 100 pm. The specific resistance of the main liquid crystal is 1.9 × 1013 ohm · cm, and the NI point is 70. 5t. The paper size is suitable for the Chinese National Standard (CMS) / Ｍ 格格 (-5 line printed by the Industrial and Commercial Cooperation Bureau of the Intellectual Property Office of the Intellectual Property Office of the Ministry of Economic Affairs). Fen-41 583479 Except the weekly orientation V. Description of the invention (39). After adding 2 '5-dimethylfluorene, it becomes 5. 2χ 丄 〇 " Ohm. The NI point of the liquid day and the addition of liquid crystal It is almost the same for 0 ° C.. The display quality of the liquid crystal display device according to Example 2 of the present invention is evaluated. It can be confirmed that "| the heart is not hidden, and at the same time, the occurrence of afterimage defects is visible. [Implementation Example 3] The thickness of Example 3 of the liquid crystal display device according to the present invention is other than 50 nm, which is the same as that of Example 1. The display quality of the liquid crystal display device of Example 3 related to the present invention can be confirmed to be high when evaluated. The display of quality, at the same time, almost no afterimage defects occur. [Example 4.] Example 4 of the liquid crystal display device related to the present invention, except that the thickness of the alignment film used is 300 nm, and the example 1 the same. The liquid crystal display device according to the fourth embodiment of the present invention When the display quality is evaluated, a high-quality display can be confirmed, and at the same time, few afterimage defects are visible. [Embodiment 5] Embodiment 5 of the liquid crystal display device according to the present invention, except that the pixel electrode pitch is 2 microns, Example 1 Same ° The paper size applies the Chinese National Standard (CNS) Λ4 specification (210x 297 hours) ---------- tII (Please read the item I on the back _ buy this), 11 Printed by the Consumer Goods Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-42-583479 A7 B7 V. Description of the invention (40) When the display quality of the liquid crystal display device according to Example 5 of the present invention is evaluated, a high-quality display can be confirmed, and [Embodiment 6] Embodiment 6 of the liquid crystal display device of the present invention is similar to the implementation of a liquid crystal molecular nematic liquid crystal having a mono-aeroyl cyclohexane structure in the molecule. Same as in Example 1. The specific resistance of the main liquid crystal is 3 · 5 X 1 0 1 2 ohm · cm, and the NI point is 7 1 · 5 ° C. After adding 2, 5-dimethylphenol, it becomes 2. · 5 X 1 0 1 1 ohm · cm. The NI point of this liquid crystal is almost the same as that of the liquid crystal before addition. 7 1 · 2 ° C. When the display quality of the liquid crystal display device according to Example 6 of the present invention is evaluated, a high-quality display can be confirmed, and at the same time, few occurrences of afterimage defects are visible. [Embodiment 7] The present invention is related to Example 8 of the liquid crystal display device is the same as Example 1 except that the dopant is 5,000 ppm of 2, 5-dimethylaniline.

. The ratio of the main liquid crystal. The resistance is 1.9 X 103 1 ohm · cm, and the N I point is 70.5 ° C. When adding 2, 5-dimethylaniline, it becomes 1.2 X 1 0 1 1 ohm · cm. The N I of this liquid crystal is almost the same as that of the liquid crystal before the addition, and is 70.lt. The size of this paper is applicable to China National Standard (CNS) A4 specification (2 丨 0: < 297 Gongchu) Please read the note on the back, and then ^^ this page) — Equipment · — Order Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumption Cooperative Co., Ltd. printed bismuth 583479 A7 B7 Ministry of Economic Affairs Zhizhan Property Bureau Xiao Gong Cooperative Cooperative Cooperative printed disaster

-44-583479 A7 V. Description of the invention (42) Example 9] In addition to the dopant, the embodiment of the liquid crystal display device related to the present invention is added with 0 0 ppm of dihydrochloride 2, 5 -ethoxy-4 -morphine Except for aniline, it was the same as in Example 1. The specific resistance of the main liquid crystal is 1.9 × 10 3 ohm · cm, and the NI point is 70. Dihydrochloride 2,5-diethoxy-4 monomorpholine aniline with the following structural formula becomes 2 · 5χ 1011 Ohm cm. The NI point of this liquid crystal is the same as that of the liquid crystal before addition, which is 70 ° C. 2 ° C.

H3CH2CO

OCH2CH3, ν'α Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Xiao Gong Consumer Cooperative, Hydrochloric acid 2, 5-diethoxy-4 monomorpholine aniline The display quality of the liquid crystal display device according to Example 9 of the present invention may be evaluated when A high-quality display was confirmed, and at the same time, few occurrences of afterimage defects were visible. The ft scale of this paper applies the Chinese National Standard (CNS) Λ4 specification (2 丨 0 × 297 males) 583479 A7 V. Description of the invention (43) [Example 10] Example 10 of the liquid crystal display device related to the present invention, except that the dopant is The same procedure as in Example 1 was performed except that 9-0 p p.m of N- (2,5-diethoxy-4-nitrophenyl) morpholine was added. The specific resistance of the main liquid crystal is 1.9 > < 103 1 ohm · cm, and the N I point is 70.5 t :. . Adding (2,5 ethoxy-4 -nitrophenyl) morpholine of the following structural formula to 8.9 X 1 0 1 0 ohm liquid crystal is almost the same, which is 7 (0 cm. N 'of the liquid crystal 2 ° C. Please read the back before points and additions-Note: Please refer to h3ch2co

OCH2CH3 Printed by the 8th Industrial Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

N 2 5 phenanthrylphenyl 2 nitrate 〇- \ N 4 I based oxyethyl hair products showing good and bad appearance, leaving the equipment installed without showing a few times when the crystal is the same liquid, showing ο show 1 example of quality application The recognition of Gao is indeed clear. Make an estimate. In this review, the paper size applicable to the Chinese National Standard (CMS) A4 (210X297 cm) is -46-cm, and the NI point is 7 0 583479 A7 B7. 5. Description of the invention (44) [Comparative Example 1] Comparative Example 1 of the liquid crystal display device according to the present invention is the same as Example 1 except that the dopant is 2 -cyano-3 -fluoro-5-(4-n-propyl-trans-cyclohexyl) phenol. The specific resistance of the host liquid crystal is 1.9 X 1 0 1 3 ohm C ° 2 of the following structural formula added with 1 000 pp nl _cyano-3 -fluoro-5-(4 -n-propyl one trans one ring Hexyl) phenol becomes 3.3 X 1 0 1 1 ohm · cm. The N I point of the liquid crystal is almost the same as that of the liquid crystal before the addition, which is 70.4. (: Please read the back, note-note items on this page first

2-N-propyl-trans-cyclohexyl) Phenol Cooperative of Employees, Intellectual Property Bureau, Ministry of Economics, Phenol Co., Ltd. ^ The high-quality display can be confirmed when the display quality of the liquid crystal display device of Comparative Example 1 related to the present invention is evaluated. Defective afterimages occur. [Comparative Example 2] Comparative Example 2 of the liquid crystal display device according to the present invention, except that the dopant system uses 2-cyano-3 -fluoro-5 (4-n-propyl-trans-bicyclohexyl) phenol, and Example 1 is the same. The specific resistance of the main liquid crystal is 1.9 X 103 ohm · cm, and the N I point is 70.5 ° C. The size of this paper is applicable to Chinese National Standard (CNS) A4 (210X 297 cm) -47-583479 A7 ____ B7 _ V. Description of the invention (45) 2 of the following structural formula -Cyano-3 -Fluoro-5 -(4-n-propyl-trans-bicyclohexyl) phenol at 1000 ppm was converted into 5.5 x 10 12 ohm • cm. The NI point of this liquid crystal is almost the same as that of the liquid crystal before the addition, which is 70.3 ° C.

c3h7 2 —Cyano-3—fluoro-5— (4-n-propyl-trans-bicyclohexyl) phenol When the display quality of the liquid crystal display device of Comparative Example 2 according to the present invention is evaluated, a high-quality display can be confirmed , But afterimage defects occur. Printed by Xiao Gong Consumer Cooperative, Intellectual Property Bureau of the Ministry of Economic Affairs, Chapter 16 illustrates a top view of a pixel in another embodiment of the present invention. In this embodiment, the pixel electrodes P X and the counter electrodes C T 1 and C T 2 are arranged in a zigzag pattern. Thereby, two areas (sub-domains) of the re-oriented state with different directions are formed. The oblique coloring and hue inversion are compensated respectively, and a wider viewing angle can be obtained. That is, each electrode has a plurality of flexures in a zigzag shape in each direction. With the flexures as a boundary, one side has an angle of β with respect to the longitudinal direction R D R P in the figure, and the other side has an angle of 180 °-β. As a result, a second area (subdomain) with a direction different from the above is formed, and the oblique coloring and hue inversion are compensated respectively, and a wider viewing angle can be obtained. -4R-This paper states the Chinese National Standard (CNS) of the paper, Λ4 specification (2ΙΟχ 297 cm) 583479 A7 __ B7 ____ 5. Description of the invention (46) RDRP in the vertical direction shows liquid crystal molecules with positive dielectric anisotropy (Np The orientation direction of the initial orientation of the alignment film ORI of the liquid crystal), and the transverse direction RDRN indicates the orientation direction of the initial orientation of the alignment film ORI of the liquid crystal molecules (N η liquid crystal) having a negative dielectric anisotropy. In the pixel structure of this embodiment, any one of liquid crystal molecules with a dielectric anisotropy of positive or negative can be used. In addition, as in the other embodiments, the pixel electrode P X and the counter electrodes C T 1 and C T 2 in FIG. 16 are formed with a gate insulating film GI. In order to rotate the liquid crystal molecules between the electrodes, There is a lateral electric field. The gate signal line G L and the drain signal line D L are the same as those of the other embodiments. An electrode SD 2 formed from the drain signal line DL and the gate signal line GL is overlapped, and an amorphous semiconductor layer ASI is disposed between the electrode SD 1 connected to the pixel electrode P X and a holding voltage applied thereto, which exerts thin film electricity. Function of crystal TFT. The thin film transistor D T is provided with a protective film P S V. The protective film P S V is mainly formed to protect the thin film transistor T F T from moisture, and is used for those with high transparency and good moisture resistance. The protective film PSV printed by Xiao Gong Anti-poverty Cooperative of the Ministry of Economic Affairs and Intellectual Property Bureau is formed of, for example, a silicon oxide film, a silicon nitride film, or an acrylic resin, polyimide, or the like formed by a plasma CVD device. Around 0.1 to 3 microns. The counter voltage signal line c L is formed in the same manufacturing step as the scanning signal line G L and the counter electrode C T, and is configured to be electrically connected to the counter electrode. Via the counter voltage signal line C L, a counter voltage V c 0 m can be supplied from the external circuit to the counter electrode C D. In addition, the part that intersects with the image signal line DL is to reduce the paper rule with the image signal. The degree applies to the Chinese National Standard (CNS). Λ material sees the grid (2 丨 〇 >: 297 gong) ·-49-583479 ίκΊ Β7 V. Description of the invention (47) The rate of short circuit of line DL is based on two thin wires, even if the short circuit can be divided by laser trimming. The electrode ST is formed of a metal film (a layer containing metal atoms), and is connected to the pixel electrode PX through the through hole T1. Furthermore, the electrode S T must be supplied with the necessary potential from the outside. Because of the effect of no floating electrode, a through hole TH1 is opened in the protective film PSV and connected to other electrodes. In this embodiment, the electrode ST formed integrally with the pixel electrode P X is superposed on the counter electrode CT2 via the protective film PSV. In addition, in order to keep the pixel electrode PX in contact with the through hole τ II 1 even if there are variations in the through hole and electrode ST in processing and manufacturing, the pixel electrode PX is integrally arranged with the pixel electrode PX as the first The pedestal shown in FIG. 6 is larger than the pixel electrode PX. Thus, in this embodiment, an electrode S T electrically connected to a pixel electrode is formed on the protective film PS V. Thereby, a capacitor (protective film capacitor) with a protective PSV or protective film PSV and an insulating film GI finally formed between the pixel electrode PX and the counter electrode c T1, CT 2 and the liquid crystal as a dielectric (protective film capacitor) often has an electrode ST For charging, an electrode having a DC potential substantially equal to that of the electrode ST (its DC component is the same potential in the case of AC), even when a foreign substance or the like leaks out of the liquid crystal layer, no charging current flows. Therefore, there is no electrochemical reaction (electrode reaction) near the leaked electrode. That is, since the electrode ST is formed on the protective film P S λA, the charging current to the protective film capacitors of other electrodes caused by the defect of the protective film on the electrode can be suppressed, and the occurrence of spot-shaped uneven brightness can be suppressed. In the present invention, a gate electrode as a cathode electrode or a wiring is specially provided. The paper size is applicable to Chinese National Standards (CNS) Λ4. Grid (2 丨 〇297297) (please read the precautions and write the book first) Page) Yinxian 583479 A7 B7, Goods and Consumers Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (48) Electrode GT or scanning signal line GL. Furthermore, an electrode or wiring that is relatively higher than the potential of the gate electrode GT or the scanning signal line GL is defined as the electrode or wiring on the anode side, and the electrode or wiring on the anode side is the source electrode SD 1 and the drain electrode SD 2 , The image signal line DL, the pixel electrode PX, the counter electrodes CT1, CT2, and the voltage signal line CL. As described above, in this embodiment, the electrode S1, which is an example of the electrode or wiring on the anode side, is electrically connected to the pixel electrode PX, and the electrode ST can be connected to the electrode or wiring formed by one or both of the cathode and the anode. Figs. 17, 18, and 19 are plan views illustrating a modification example of the pixels described in Fig. 16 described above. In Figs. 17, 18, and 19, the pixel electrode P X and the counter electrode C T are each formed of a transparent electrode (I T0 or I Z0), and the number of electrodes, the electrode interval, and the layer forming the electrode are different. These figures are like those in FIG. 16, and each electrode system of each electrode group is formed into a zigzag shape with a large number of bent portions in each direction. With its flexure as the boundary, one side has an angle of 0 to the direction of the image signal line D L and the other side has an angle of 180 °-Θ. Printed by the Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, this can form a two-region (sub-domain) with a reorientation state different from the above direction. The oblique coloring and hue reversal can each be compensated for a wider range. Perspective. Fig. 17 shows a direction in which the electric field direction between the pixel electrode and the counter electrode intersects the video signal line D L. In Figure 17A, there are 6 pixel electrodes, and the counter electrode CT forms a full cloth shape over the entire area of the pixel. This paper size applies the Chinese national standard ((:) ^) 8 4 specifications (2 丨 0 > & lt (297 mm) 583479 A7 B7 V. Description of the invention (49) In Figure 1A, the electrode ST is connected to the counter electrode. The black matrix B M is extended to the outer dashed line in the figure, and it is extended to the inner dashed line in the figure. Figure 17B shows 6 pixel electrodes, and the counter electrode C overlaps with the pixel electrode provided separately. At the same time, the width is larger than that of the pixel electrode. Compared with Figure 17A, the capacitance The capacitance of the element C stg can be as small as 400 Farads. Figures 18 and 19 show the direction of the electric field between the pixel electrode PX and the counter electrode CT along the direction of the image signal line DL. In Figure 18, the The counter electrode CT system is formed almost in the entire area of the pixel area. In Figs. 18A and 18B, the electrode width, the number of electrodes, and the electrode spacing are different. Specifically, the pixel electrode PX in Fig. 18A is different. The width is 5 microns, and the width of the pixel electrode in Figure 18B is 9 microns. Again, The number of pixel electrodes in one pixel in FIG. 18A is 30. The electrode interval is 5 micrometers in FIG. 18A and 4 micrometers in FIG. 18B. Compared to FIG. The transmittance of Figure 8A is improved. However, Figures 18 and 19 are the ends of the pixel electrodes, which are inverted in an S-shape in a pixel. It is an additional capacitor between the pixel electrode and the counter electrode. It is consistent with the direction of the scanning signal line GL. In Figure 19A, the width of the pixel electrode PX is 5 micrometers, and the interval between adjacent pixel electrodes PX is 5 micrometers. The counter electrode CT overlaps with the pixel electrode provided separately. At the same time, its width is formed to be larger than the width of the pixel electrode PX. In Fig. 19B, the width of the pixel electrode is 4 micrometers, and the size of the adjacent image paper is applicable to the SS home standard (CNS) standard 8 (21). Χ 297 犮) (Please read the notice on the back! ^^ Copy, v5, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 583479 A7 B7 V. Description of the invention (50) The interval between the element electrodes is 4 microns, so the aperture ratio is larger than that in Figure 19 A. However, the pixel structure in Figure 19 is The pixel structure of the figure can reduce the additional capacitors. With the above embodiments, an active matrix liquid crystal display device of the IPS mode that does not easily generate an afterimage can be provided. As explained above, according to the present invention, it is possible to provide a superimposed DC voltage When a liquid crystal driving voltage waveform is applied to a liquid crystal layer, after the DC voltage is removed, there is no DC voltage remaining in the liquid crystal layer, and an active matrix type liquid crystal display device in which an afterimage is suppressed. Standard Shizhou Chinese National Standard (CNS) Λ4 specification (2 丨 OX297 mm) -53-

Claims (1)

583479 Announcement ABCD amends and replaces this month of moxibustion. Patent application scope 1. An active matrix liquid crystal display device, characterized in that I includes a pair of substrates, a liquid crystal layer sandwiched between the pair of substrates, and disposed on the pair of substrates An alignment film that defines the orientation direction of liquid crystal molecules of the liquid crystal layer and a liquid crystal layer, and a pixel electrode and a counter electrode that apply a voltage to the liquid crystal layer, and wherein the liquid crystal molecules of the liquid crystal layer have a negative induction difference At the same time, the liquid crystal layer contains a dopant having a dissociation group. '2. The active matrix liquid crystal display device according to item 1 of the patent application range, wherein at least one of the pixel electrode or the counter electrode has an electrode width of 1 to 15 micrometers and an electrode interval of 1 to 10 micrometers. And either of the pixel electrode and the counter electrode is made of a transparent electrode. _ 3. The active matrix liquid crystal display device according to item 2 of the scope of patent application, wherein the above-mentioned transparent electrode contains either I TO or I ZO. 4. The active matrix liquid crystal display device according to item 1 of the scope of patent application, wherein the pixel electrode and the counter electrode have a zigzag shape with a large number of flexures. 5. The active matrix liquid crystal display device according to item 4 of the scope of patent application, wherein most of the above-mentioned image signal lines and most scanning signals formed in a matrix form. Each intersection of the number lines is provided with a thin film transistor. Each pixel formed individually has at least one pair of the above-mentioned pixel electrode and a counter electrode, and is formed on the extension of the scanning signal line. The paper size is applicable to China National Standard (CNS) A4 specification (210; < 297 mm). ) Please read the note 乂 item 乂, and then the page printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -54-583479 ABCD. The scope of patent application 2 extends in the same direction. 6. The active matrix liquid crystal display device according to item 1 of the scope of patent application, wherein the above-mentioned dopants contained in the liquid crystal composition have a dissociation group only in the short axis direction of the molecule, and at the same time, the-* terminal system The base or the oxygen group is contained in the liquid crystal layer in a range of 100 ppm or more and 1,000 ppm or less. 7. The active matrix liquid crystal display device according to item 6 of the scope of patent application, wherein the dopant is a compound of the following structure ′ (Please read the note on the back first, and then note the matter) R2—A2— X! —— Liu Changxin, νό Y 1: C Ο Ο Η.-C Ο Ν Η 2.-Ν Η 2. —N Η R, — Ν R 2 Any of Υ2: hydrogen, F, CN, C 〇〇H,-C NH-NH 2, any one of Y3: hydrogen, F, CN, C 〇OH,-C NH-NH2, any of Y4: hydrogen, F, CN, C 〇〇Η,-C 〇N II-NH 2, 〇H any one of Xi: single f built,-C101, 101, 101, table paper size applicable to China Standard (CNS) Α4 is now available (21 〇 × 297 mm) 〇 印 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-55- 583479 ABCD VI. Application scope 3 1C 〇C Η 2 —, 1 C. Η 2 — C 〇1, —C I-Ι 2 〇1, —〇C Η 2 —,-C Η 2-C Η 2-.-C. Η 2 C. Η — any bond, a 〇〇〇 One, one, one, one, one, one, 〇C Η 2 —, one, C · Η 2 — C, one, one, C Η 2 〇1, —, 〇C-2-, — C Η 2-C Η 2 — , — C · Η two C Η-either Ai: single bond, phenyl, cyclohexyl A 2: Any one of single bond, phenyl, cyclohexyl 'R i: Any one of alkyl or alkoxy R 2: Any one of alkyl or alkoxy 8 Matrix type liquid crystal display device, in which the dopant is a compound of the following structure (please read the precautions on the back first, then this page), τ —Latch 1 Printed by the cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 Cooperative Y 2 Y 1: C Ο Ο Η,-C Ο Ν Η 2,-Ν Η 2,-〇Η, —Ν Η R, — NR Any one of 2 Υ 2: hydrogen, F, C Ν, C 〇〇Η, -C 〇Ν —, -N Η 2,-〇 Χ Any one: single bond, -C〇101, _〇 -C〇1, -C 〇CH 2 _, -CH 2-C. 〇1, -C. H 2 〇1, This paper size applies the Chinese National Standard (CNS) Ad specifications (2) ϋ: · < 297 Mm) -56- 583479 ABJC3D ττ, patent application scope 4 — 0C Η 2 —, one C Η 2 — C Η 2 —, one CH two CH — / any kind of χ2: single bond, one c0101 〇 一一 〇〇 一, 一 C 〇C Η 2 —,-C Η 2 — C 〇 一,-C Η 2 〇_ 一, -〇C Η 2 —,-C Η 2-C Η 2-, — C. Η Di C Η — Any one of A :: Any one of single bond, phenyl, and cyclohexyl A 2. Any one of early bond, this group, and cyclohexyl R 1: hydrogen, alkyl, or alkoxy Either R 2, Qi, Carboxyl or Oxy. 9 · An active matrix liquid crystal display device, comprising: · A pair of substrates, a liquid crystal layer sandwiched between the pair of substrates, and an orientation direction of liquid crystal molecules arranged between the pair of substrates and the liquid crystal layer is specified The alignment film, the pixel electrode and the counter electrode that are applied with voltage to the liquid crystal layer, and the liquid crystal molecules printed on the liquid crystal layer by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs have positive dielectric anisotropy. At the same time, the The liquid crystal layer contains a dopant having a dissociation group. 10 · The active matrix liquid crystal display device of item 9 of the scope of patent application, in which the above-mentioned pixel electrode and the counter electrode have a zigzag shape with a large number of bending portions. 1 1 · As for the active matrix liquid crystal display device with the scope of patent application No. 10, the paper size is in accordance with the Chinese National Standard (CNS) Λ4 specification (170x 297 male thin 1 ~ --- -57-583479 ABCD) It is specifically requested that each of the plurality of image signal lines and the plurality of scanning signal lines forming a matrix be provided with the above-mentioned thin film transistors, and each pixel individually formed on the parent fork forms at least one pair of the above-mentioned pixel electrodes and pairs. The electrode is formed in the same direction as the extending direction of the above-mentioned image signal. 12 · The active matrix liquid crystal display device of item 11 in the scope of patent application, wherein either of the pixel electrode and the counter electrode contains IT0 or Any one of IZ〇. 1 3. The active matrix type liquid crystal display device according to item 1 or 9 of the patent application scope, which includes the scanning signal line and the pair of the above-mentioned scanning signal lines formed on the liquid crystal side of one of the substrates. A counter electrode and a counter voltage signal line for applying a counter voltage to the counter electrode are formed on the scanning signal line, the counter electrode, and the counter voltage signal · An above-the-line odor insulating film, the pixel electrode formed on the gate insulating film, a protective film formed on the pixel electrode, and the alignment film formed between the passivation film and the liquid crystal layer, The specific resistance of the liquid crystal layer is more than 1 · 0 X 1 0 9 ohm · cm, and 1 · 0 X 1 0 12 2 ohm · cm or less. 1 4. Such as the active matrix of the patent application park Item 13 A liquid crystal display device, which includes a color filter formed on the liquid crystal layer side of the other substrate of the above pair of substrates. This paper size applies to Chinese National Standard (CNS) A4 specifications (21 () × 297 public funds) Please read first Back, printed page Printed by Employee Consumption Cooperative of Intellectual Property Bureau, Ministry of Economy -58-583479 ABCD 6 Wai Fanli specially invited to form a matrix black matrix on the color filter film, and a top coating film formed on the black matrix, and the alignment film is formed between the top coating film and the liquid crystal layer. 1 5 · If the active matrix type liquid crystal display device of item 13 of the patent application scope, wherein the passivation film is an inorganic film of silicon oxide film or silicon nitride film with a thickness of 1 micrometer or more and 1 micrometer or less, or Organic film made of polyimide above 2 microns and below 3 microns. 16. The active matrix liquid crystal display device of item 1 or 9 of the patent application No. 5¾, wherein the film thickness of the alignment film is 20 nm to 30 · 0 nm. 17 • The active matrix liquid crystal display device according to item 16 of the patent application park, wherein the alignment film is made of polyimide as a main component. L 8. The active matrix type liquid crystal display device according to item 15 of the patent application range, wherein the passivation film and the alignment film are formed between the pixel electrode, the counter electrode, the scanning signal line, and the above. An electric signal line connected to any of the video signal line or the above-mentioned opposing voltage signal line. 19 · The active matrix liquid crystal display device according to item 18 of the scope of patent application, wherein the electrode is connected to the pixel electrode, the counter electrode, the scanning signal line, the image signal line, or the opposite through a through hole. Any electrical connection of the voltage signal line. 2〇 · A liquid crystal composition material, characterized in that: 'For a liquid crystal composition material having a negative dielectric anisotropy, it is added in the range of 1 ◦ ○ P pm to 1 0 0 PP m only in the direction of the short axis of the molecule. With a dissociation base, this paper H applies the Chinese National Standard (CNS) A4 specification (210X297 ^)--59-(Please read the technical sounds on the back and write another one? Write this page). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 583479 ABCD, patent application scope 7 The two ends of the molecule in the minor axis direction are doped with alkyl or alkoxy. 2 1. If the liquid crystal composition material of the scope of patent application No. 20, wherein the dopant is a compound of the following structure, A —R2 Y i: Any one of C 〇〇Η,-C 〇ΝΗ 2,-Ν Ι−Ι2, 〇Η, —Ν Η R, — Ν R 2 Υ2: hydrogen, F, CN, C 〇〇H, -CONH, -NH2, any of Y0H3: hydrogen, F, CN, COOH, -CONH, -NH2, any of Y0 · -Hydrogen, F, C N, C 〇〇Η, -C 〇Ν Η, -N Η 2, any one of 〇H: single bond, -C101, -101,- C 0 C Η 2 —. One CH2 — C〇1, —C Η 2 Ο — > —〇C Η 2 —, One C Η 2 — C Η 2 —, One C Η = C Η — Any of χ2 : Single bond, one C101, one 101C01, one C0CH2 —, — C · Η 2 — C 0 —. — C Η 2 0 —, —〇C II 2 —, one C Η 2 — CH 2 —, 1 CH = CH-Any of the paper sizes are applicable to the Chinese National Standard (CNS) A4 (210 × 297 mm). Please read the note below for% items Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs of the People's Republic of China, -60-583479 A8 B8 C8 D8, patent application range 8 A ι. Σ Mouth • Ji [iL bond, phenyl, cyclohexyl any of A 2 • 単 bond Any of phenyl, hexahexyl— · R ι: Any one of alkyl or alkoxy R 2: Any one of alkyl or alkoxy 〇 2 2 As mentioned above in item 20 of the scope of patent application Compounds of the following structure, R2-A2 X—A—R, y1 Printed by y2, employee cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: 〇〇H, 〇NH2,-NH 2, 〇H, -NHR,-NR 2 Y2: hydrogen, F, CN, COO H, -CON Η, -N Η 2, -10H: single bond, -CO101, -101, CO1-, -COCH2- , -C · Η 2-C 0-, -CH2〇 一, -〇C Η 2-, -C. Η 2--C Η 2 —, -C Η = C Η — Any of X'2 ·· Single Bond, one c101, 101 one c01, .one C 〇CH 2 —, one CH 2 — C one, one CH 2 001, —0 CH 2 —, one CH 2 — C. Any of H 2 —, one CH and two CH — This paper size is in accordance with China National Standards (CNS) A4 grid (2lOX; 297 mm) -61-583479 ABCD VI. Patent application scope 9 Αι: single bond, benzene A2: a single bond, a cyclohexyl group, a single bond, a phenyl group, or a cyclohexyl group; R i: a hydrogen group, a ceryl group, or a ceryl group; R2: a hydrogen group, an alkyl group, or an alkoxy group. 2 3. The liquid crystal composition material according to claim 20 of the application scope, wherein the liquid crystal composition material has any one of a difluorobenzene structure, a dicyanobenzene structure, or a monocyanocyclohexane structure. 2 4. The active matrix liquid crystal display device according to item 13 of the patent application scope, in which the above passivation film is 0.1 micrometer or more and 4 micrometers or less (please read the precautions on the back first and then θ page). The paper size printed by the Bureau ’s Consumer Cooperatives applies the Chinese National Standard (CNS) Λ4 specification (2HJX 297 mm) -62-