TW494261B - Liquid crystal display device using in plane switching with high opening ratio - Google Patents

Abstract

A liquid crystal display device using in plane switching with high opening ratio is disclosed, which can realize the viewing angle similar to the CRT to provide an active matrix liquid crystal display device with low power consumption having electric field control display screen parallel to the substrate surface, form the pixel electrodes and opposite electrodes for applying electric field parallel to the substrate surface; and, forming the pixel electrodes or opposite electrodes with transparent electrodes; and, forming the orientation of liquid crystal and the polarization axis of the polarization plate, so as to proceed the dark display without applying the electric field. The present invention can provide an active matrix liquid crystal display device using in plane switching with wide viewing angle, excellent contrast and hole diameter ratio, and the maximum transmission ratio.

Description

494261 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (1) The present invention relates to an active matrix liquid crystal display device 1 and particularly to a transverse electric field method with a wide viewing angle characteristic capable of raising the opening rate of the tube Liquid crystal display device 〇 Active matrix liquid crystal display devices using active elements represented by thin film transistors TT FT are gradually being widely used in display terminals such as OA devices because of their thin and light features and high image quality equivalent to image tubes. Device 〇 The display mode of the liquid crystal display device is roughly the following two. One of the methods is to hold the liquid crystal on two substrates forming a transparent electrode to apply a voltage to the transparent electrode to make it operate-QE1 m changes through the transparent electrode. The method of displaying light that enters the liquid crystal. It belongs to this method. The other method is a display method in which the liquid crystal operation m is changed by the electric field substantially parallel to the substrate surface formed between two electrodes on the same substrate. 〇This method is characterized by a very wide viewing angle. J is a very futuristic technology for active matrix liquid crystal display devices. 〇It is generally called the transverse electric field method > or In-Plane Switch-i η g < > the latter method. The characteristics are described in Takashihei 5-5 0 5 2 4 7 > Takashiho 6 3-2 1 9 0 7 9 Takkai Hei 6 1 6 0 8 7 8 According to the latter's customary method, because The opaque metal electrode is formed in the shape of a comb, so that light passes through the hole area through which the Hr passes. (The aperture ratio is very low> according to the latter's customary method. Moving matrix type liquid crystal display device> Because the display screen is dim or the display screen must be bright, it is necessary to use a power consumption paper. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -4-494261 A7 B7 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative. V. Invention Description (2) The bright backlight with a large rate makes the power consumption of the device increase. In other respects, according to the conventional method, because the metal electrode is used, the reflectivity of the electrode is high, and the reflection of the electrode causes the face image to appear on the screen, causing confusion. The object of the present invention is to provide an active matrix liquid crystal display device that can solve the above-mentioned problem. The display method adopts a display method equivalent to the viewing angle of the image tube, that is, has a high aperture ratio, bright, low power consumption, and low reflection. , Easy to watch active matrix liquid crystal display device. In order to achieve the above object, the first structure of the present invention is characterized in that at least the pixel electrode or the counter electrode is a transparent electrode, and becomes a normal dark mode for dim display when no electric field is applied, and the reversible liquid crystal when no electric field is applied. The initial alignment state of the layer becomes a uniform alignment state. 'When the electric field is applied, the liquid crystal molecules between the electrodes and on the electrodes actively rotate parallel to the substrate surface.' The maximum light transmittance of the liquid crystal display panel is 4.0% or more, compared with 1. The viewing angle range of 0 to 1 is in an all-round range of 40 degrees or more inclination with the direction perpendicular to the display surface. The second structure is characterized in that at least one of the pixel electrode or the counter electrode is a transparent electrode, which becomes a normal dark mode for performing a dim display when an electric field is not applied, and an initial orientation of a reversible liquid crystal layer when an electric field is not applied. The state is a uniformly aligned state, and the torsional elastic constant is 1 ο X 1 0_12N (Newton) or less. The third structure is characterized in that at least one of the pixel electrode or the counter electrode is a transparent electrode, and becomes dim when no electric field is applied. Normal dark mode shown, initial orientation of the reversible liquid crystal layer when no electric field is applied. The paper dimensions are applicable to China National Standard (CNS) A4 specifications (210X297 mm). 5-494261 A7 B7 Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative. 5. Description of the invention. (3) The initial pretilt angle of the liquid crystal molecules in the liquid crystal layer above and below the liquid crystal layer is uniformly aligned. The initial tilt angle of the liquid crystal molecules in the liquid crystal layer is spray. ) State < Characteristic of the 4th structure is At least one of the pixel electrode or the counter electrode is a transparent electrode, which becomes a normal dark mode for dim display when no electric field is applied. The initial alignment state of the twistable liquid crystal layer when no electric field is applied is a uniform alignment state on the transparent electrode. The average tilt angle of the liquid crystal molecules of the liquid crystal layer is less than 45 degrees when no electric field is applied. The fifth structure is in any of the first to fourth structures. 1 At least the pixel electrode or the counter electrode system is used. Double-layer structure of transparent electrode and opaque metal electrode. The 6th structure is any of the 1st to 4th structures.-The structure using adjacent opposing voltage signal lines in the structure to connect the opposing electrodes in the pixel through perforations 〇The seventh structure is characterized by having a covering in any one of the first to fourth structures. At least one of the pixel electrode or the counter electrode is formed on the protective film of the active matrix element and is formed on the protective film and connected to the active matrix element or the opposite voltage signal line through a through hole formed in the protective film. The structure of any of the first to fourth structures is a structure in which a counter electrode system is called a transparent electrode and has a light-shielding I c < r | pattern between the counter electrode and the image signal line. 9 The structure is the first, 2 3 4 or 5 structure. The opposite electrode signal line connecting the opposite electrodes is metal. 0 This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm)-6-494261 A7 B7 V. Description of the invention (4) ^ (Please read the precautions on the back before filling in this page) The 10th structure is any one of the 1st to 4th structures with more than 3 counter electrodes, of which 2 counter electrodes are adjacent to the image Line adjacent to the video signal line to the form of the transparent electrode. The first 11 structure is a transparent conductive film used for the transparent electrode of any of the first to fourth structures is indium tin oxide (I TO). The twelfth structure is the opposite voltage signal line of the ninth structure, which is C r, Ta, T i, Mo, W, Aj? Or its alloy, or a cladding structure in which the above elements are laminated. The thirteenth structure is the ninth structure, and the opposing voltage signal line is a cladding structure formed by laminating a transparent conductive film such as ITO on C r, D a, Ti, Mo, W, A $ or an alloy thereof. The feature of the 14th structure is that the initial twist angle of the liquid crystal layer on any of the first to fourth structures is approximately 0, and the initial alignment angle is positive when the dielectric anisotropy of the liquid crystal material is positive. It is 45 degrees or more and 90 degrees or less, and when the dielectric anisotropy Δε is negative, it is 0 degrees or more and 45 degrees or less. The first manufacturing method printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is characterized in that at least the scanning signal line terminal portion 'image signal line terminal portion' or the uppermost conductive layer of the opposite electrode terminal portion is formed with a transparent conductive layer. And at least one of the pixel electrode or the counter electrode is formed in the same operation. The effect of the present invention will be described below. The function of the first structure is to 'make at least one of the pixel electrode or the counter electrode * the square becomes transparent', and the maximum transmittance for bright (white) display can be improved by the penetrating light that penetrates this part. For opacity, it applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) when compared to the paper size. 494261 A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description (5) can be displayed more brightly. The light transmittance of the liquid crystal display panel is increased from 3.0 · 3 to 8% when the opaque electrode is used in a conventional manner to a maximum transmittance of 4.0% or more. That is, assuming that the brightness of the backlight's incident light is 3 0 0 c d / m2, the maximum brightness value of the bright display brightness can reach more than 120 c d / m 2. When no voltage is applied, the liquid crystal molecules maintain an initial uniform alignment state, so a polarizing plate (formed into a normal dark mode) is configured to display dim (dark) in this state, even if the electrode is transparent, it will not penetrate the part. The light can be used for good dim display, which can improve the contrast. If it is normally white, it must be dimly displayed when no voltage is applied, and the upper part of the electrode cannot completely block the light when the voltage is applied. Therefore, the penetrating light of this part will increase the transmittance of the dim display and cannot be performed. Dim display of good quality. Therefore, sufficient contrast cannot be reached. Since the liquid crystal molecules between the electrodes and on the electrodes are actively rotated parallel to the substrate surface when a voltage is applied, a wide field of view characteristic can be generated. Therefore, a contrast angle range of 10 to 1 or more can be generated within a range of full azimuth inclined at an angle of 40 degrees or more in a direction perpendicular to the display surface, and a wide viewing angle characteristic. The function of the second structure is that when a voltage is applied between the pixel electrode and the counter electrode, since the torsional elastic coefficient of the torsionable liquid crystal layer is less than 1 0 X 1 0_12N (Newton), it is on the electrode of the transparent conductive film. The angle α rotated from the initial alignment direction increases, and the transmittance on the electrodes complements the transmittance between the electrodes, which substantially improves the aperture ratio. The smaller the torsional elastic coefficient K 2 is, the better. $ Paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -8-494261 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ______B7__ 5. Description of the invention (6) The function of the third structure is because The initial pretilt angle of the liquid crystal molecules at the upper and lower interfaces of the liquid crystal layer is 10 degrees or less. The initial tilt state of the liquid crystal molecules in the liquid crystal layer becomes a jet state, so the tilt angle of the liquid crystal molecules in the central portion of the liquid crystal layer becomes approximately 0. Can reduce the average tilt angle of the liquid crystal layer that affects the display, so even when a voltage is applied, the tilt angle of the liquid crystal molecules between the electrodes and on the transparent electrode can be set to be small, which can improve the aperture ratio and wide field of view The purpose of the horn. The function of the fourth structure is that when an electric field is applied, the average tilt angle of the liquid crystal molecules of the liquid crystal layer on the liquid crystal electrode is still 45 degrees or less, so that the purpose of improving the aperture ratio and wide viewing angle can be achieved. The function of the fifth structure is that, since the pixel electrode or the counter electrode system uses a double-layer structure of a transparent electrode and an opaque metal electrode, disconnection of the electrode can be prevented, which is extremely advantageous for large screens. The function of the sixth structure is that the adjacent opposing voltage signal lines are connected by the opposing electrodes in the pixel through the perforations, so that the opposing voltage signal lines can be connected in a mesh shape, so the opposing direction can be reduced. The resistance of the voltage signal line will not cause major defects even if the disconnection occurs. For this reason, the field electrode can hinder the formation of electricity, and the truth of the truth is that the top-transmissive line loss is based on the optical letter and pressure crystal of the figure. The extremely shielded piezoelectric hydraulic power has less electricity, and the electric direction is reduced to increase the number of pairs. The driving system is used to reduce the number of transmissions. Point-to-use and use-to-use as the opposite of electricity. The low orientation rate of the structure of the low-rate structure and the low-equivalent structure of the knot 7 and 8 at the 9th pressure of the film, the high-grade electric protection to promote the construction of cocoa This paper dimensions apply the Chinese National Standard (CNS) A4 specifications (210X297 (Mm) 494261 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (7) Suppress horizontal crosstalk. The function of the tenth structure is that the opposite electrode adjacent to the video signal line is opaque, so that crosstalk generated with the video signal can be suppressed. The reason will be described below. Because the transparent counter electrode is formed adjacent to the image signal line, the electric field (electric power line) generated by the image signal line is absorbed by the counter electrode, and the electric field generated by the image signal line does not occur to the electric field between the pixel electrode and the counter electrode. Influence, so it can obviously suppress the crosstalk generated with the video signal, especially the crosstalk in the up and down direction of the substrate. However, the movement of the liquid crystal molecules on the opposite electrode adjacent to the image signal line becomes unstable due to the change of the image signal. If the opposite electrode adjacent to the image signal line is a transparent electrode, the light is transmitted through the electrode part. 'Crosstalk may occur. Therefore, if an opaque electrode is used as the counter electrode adjacent to the image signal line, crosstalk generated by the image signal can be suppressed. The function of the first structure is that since the transparent conductive film is indium tin oxide (I T 0), it is suitable for improving the transmittance. The function of the 12th and 13th structures is that because of the cladding structure of the opposing voltage signal lines, the resistance value can be reduced. 'The occurrence of disconnection defects can be reduced. The effect of the 14th structure is that if the liquid crystal layer is in the initial stage, The twist angle is approximately 0, and the initial alignment angle is 45 ° to 90 ° when the anisotropy of the dielectric constant of the liquid crystal material is positive. If the dielectric anisotropy Δε is negative, it is greater than 0 ° and less than 4 5 ° 'It can suppress the magnetic domains and set the appropriate maximum applied voltage range' improve the contrast 'and can also set the paper size Applicable to China National Standard (CNS) Α4 size (210X297 mm) -10-494261 A7 ____B7 5. Description of the invention (8) The response speed. The function of the first manufacturing method is to form the scanning signal line terminal portion, the image signal line terminal portion, or the uppermost transparent conductive layer of the counter electrode terminal portion and the transparent conductive film of the pixel electrode or the counter electrode at the same time. The pixel electrode and the counter electrode are formed of a transparent conductive film with increased work. In the liquid crystal display device of the present invention, at least one of the pixel electrode or the counter electrode is made of a transparent conductive film, which is related to Richard A. Soref,

The differences between the structures of the liquid crystal display elements described in Proceedings of the IEEE, December, 1974, PP-1710-1711 (hereinafter referred to as Document 1) are as follows. In Reference 1, the comb-shaped electrode corresponding to the pixel electrode and the counter electrode is made of a transparent conductive film. However, when the initial alignment state of the liquid crystal molecules is formed, Si 0 is vaporized obliquely at an angle of 85 degrees, and a high pretilt angle is intentionally formed at the interface between each electrode and the liquid crystal layer at the liquid crystal molecules. Therefore, as shown in Figure 1 (b) in Reference 1, by applying a voltage between the comb electrodes, a uniform orientation of 90 degrees is reversed from the initial orientation state printed in the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Between the electrodes is a uniform alignment state that is substantially parallel to the substrate surface, and a homeotropic alignment state on the electrodes that is perpendicular to the substrate surface, as the re-alignment state. However, according to this structure, as the electric field increases, 2 This kind of realignment of liquid crystal molecules can complement each other, and can display more brightly, but because the tilt angle of liquid crystal molecules must be increased evenly, its viewing angle characteristic becomes narrow. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -11-494261 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ___B7_ V. Description of the invention (9) According to the horizontal electric field method of the present invention In a liquid crystal display device, even if a voltage is applied between the pixel electrode and the counter electrode in order to generate a wide viewing angle characteristic and a good aperture ratio, the realigned portion of the liquid crystal molecules that affect the display image is kept as parallel as possible to the substrate surface. The uniform orientation state of the transparent conductive film electrode corresponds to the angle of rotation α from the initial alignment direction. The penetration rate on the electrode and the penetration rate between the electrodes complement each other, which can substantially increase the aperture ratio. In this specification, the uniformly aligned state refers to a state in which the liquid crystal molecules in the liquid crystal layer have an inclination (rise) angle as parallel to the substrate surface or the interface of the liquid crystal layer as possible. Specifically, the inclination angle from the substrate surface or the interface of the liquid crystal layer is less than 45 degrees. Therefore, the so-called vertical alignment state refers to a state where the inclination angle from the substrate surface or the interface of the liquid crystal layer exceeds 45 degrees. Fig. 41A shows a potential distribution diagram in a liquid crystal layer in an electrode structure that generates an electric field in a parallel direction on a substrate surface. The solid line in the figure indicates the equipotential line, and the electric field vector is oriented perpendicular to the equipotential line. The electric field vector E generates only a component Ey in the direction perpendicular to the substrate surface at the center of the electrode, but it can generate a component E X horizontal to the substrate surface outside the center portion. As shown in Figures 4 1 B and 4 1 C, the liquid crystal molecules between the electrodes rotate only by the rotation angle α from the initial alignment direction RDR toward the horizontal electric field EX in the area where the horizontal component, that is, the horizontal electric field component EX, is generated. The liquid crystal molecules on it rotate with the rotation of the liquid crystal molecules between the electrodes due to the elastic field in the liquid crystal. Therefore, the paper size of the liquid crystal molecule I at the center of the electrode applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -12-494261 A7 B7 V. Description of the invention (10) No transverse electric field is applied, but it is oriented due to the elastic field Rotate in the same direction as the liquid crystal molecules around it. In other words, the rotation angle α is large between the electrodes, decreases at the electrodes, and becomes minimum at the center portion of the electrodes. Figures 4 2 Α ~ C show the results of simulating the state. The simulation in this embodiment uses the initial twist angle of the liquid crystal layer to be substantially zero, the initial alignment direction RDR formed by the initial alignment direction RDR and the applied electric field EX, LC = 75 degrees, and the liquid crystal molecules near the upper and lower interfaces of the liquid crystal layer are formed. The initial pretilt angle is set to zero degrees as the initial uniform alignment state of the liquid crystal molecules, and the transmission axis of one side of the polarizing plate is consistent with the initial alignment direction RD R, and becomes a right angle with the transmission axis of the other polarizing plate. Intersect and implement the structure example shown in the birefringence mode. The light transmittance T / T at this time. It can be expressed by the following formula. T / T〇 = si η2 (2α eff) · si η 2 (π deff · Δη / λ) ...... (1) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs in the above formula, aeff is a liquid crystal layer The angle formed by the effective optical axis and the polarized light transmission axis. In this embodiment, the effective value of the liquid crystal layer thickness direction of the rotation angle a of the liquid crystal molecules can also be regarded as an imaginary value of the average value processing when assuming the same rotation. d e f f is the thickness of the effective liquid crystal layer with birefringence, Δ η is the refractive index anisotropy, and λ is the wavelength of light. In the formula (1), when the electric field Ex is applied, the numerical value of a e f f increases in intensity, and becomes maximum at 45 degrees. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -13-494261 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (η) In the simulation of this embodiment, the liquid crystal on) Δ η · d eff is selected as the zero-order mode of light birefringence, and the dielectric coefficient No. 4 2 A is the thickness of the liquid crystal layer that will produce an isoelectric line close to the most applied to the I TO electrode (Thickness 4 · 0 // m vs. positional relationship. The values in the figure represent the specifications. Figures 42B and 42C show the liquid crystal layer and the tilt (rise) angle when the applied transverse electric field component EX is applied. As shown in Figure 4 2C In the present embodiment, the inclination angle is less than 8 degrees. For example, the 4 2 B molecule is rotated around the center of the liquid crystal layer. For convenience of explanation, the 42C diagram is ascended to the right as Positive, left rises to negative. Even the rotation angle transmittance of liquid crystal molecules on the electrode. The most relevant to this action is that the smaller the torsional elasticity coefficient K 2 of the liquid crystal is, the better. The more easily the liquid crystal molecules are affected by the electrode Jianjian LCD The liquid crystal molecules between the rotation angle α. 41D graph of the torsional spring constant Κ

The damping of the layer (Retardati-half of the wavelength λ and the anisotropy Δε is set to a positive value of the bright display of the voltage state characteristic chart, the vertical axis table), the horizontal axis represents the potential strength of the electrode phase. When the voltage of the rotation angle α of the liquid crystal molecules from the state of the equipotential lines is shown in the thickness direction of the liquid crystal liquid crystal layer on the electrode, the liquid crystal on the electrode is 15 to 35 degrees. The sign of the tilt angle is shown. Therefore, in the mode of the present invention, α is also changed, and the torsional elastic coefficient K2 can be changed. The smaller the coefficient of this property, the effect of the molecules on the electrode rotates. The value of 2 is about 10 X. Please read the precautions on the back before filling in page I. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297). (%) -14 494261 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Disclosure of Invention (I2) 1 0 -1 2 N (N ew ton). When the electrode is transparent, due to the realignment of the liquid crystal molecules on the above electrode, the average transmittance of part A between the electrodes is 5 30%, which becomes the average value of the transmittance of part B on the electrode. Rate 〇 As described later, if the torsional elastic coefficient K 2 is set to 2 • 0 X 1 0 -1 2 N or less, 50% or more of the average penetration of the penetration coefficient of the part A between the electrodes becomes The average transmittance of part B on the electrode The average transmission rate becomes the average transmission rate of the A + B part. The transmission rate can be improved. Its value is 0, which means that compared with the conventional device composed of a completely opaque metal layer, it can substantially improve The aperture ratio of one mri pixel. In the simulation of this embodiment, y was designed by setting the initial tilt angle to 0. However, in practice, it is necessary to set the initial pre-tilt angle near the interface between the liquid crystal layer and the alignment film by polishing. 10 ° or less > 6 ° or less is preferred. In the embodiment described later, it is set to about 5 °. By setting the initial pretilt angle within the above range, the liquid crystal molecules at the interface of the liquid crystal layer can be changed. The direction is limited to the in-plane direction of the substrate > The average tilt angle of the liquid crystal layer on the electrode can be maintained less than 45 degrees even when an electric field is applied, that is, when an electric field is applied 9 It is still possible to prevent the liquid crystal on the electrode from becoming vertically oriented. Figure 4 4 shows the simulation of the tilt angle and contrast of the liquid crystal molecules in the liquid crystal layer in the liquid crystal display device of the transverse electric field method in a viewing angle range of 10 or more in all directions. An example of the characteristic chart of the result. 0 This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -15-494261 A7 ___B7_ V. Description of the invention (13) That is, if the inclination angle is 30 degrees Left and right, the contrast will be more than 10 in all directions within a viewing angle range that is 40 degrees oblique to the direction perpendicular to the display surface, and can produce characteristics that are roughly equivalent to the conventional liquid crystal display device of the vertical electric field method. In particular, the smaller the angle of inclination, the wider the range of the viewing angle. 'If it is about 10 degrees, it can be expanded to a range of about 80 degrees of inclination. If it is less than 5 degrees, it can be expanded to all areas, resulting in a wide range. Viewing angle characteristics. In this embodiment, in order to often reduce the average tilt angle of the liquid crystal molecules between the electrodes when the electric field is not applied and between the electrodes and the liquid crystal layer on the transparent electrode, the polishing directions of the alignment films OR I 1 and OR I 2 described later The initial alignment state is set so that the initial pretilt angle of the liquid crystal molecules at the interface of the liquid crystal layer on the two substrates SUB1 and SUB2 sides becomes a spray state, so that the liquid crystal molecules near the center of the liquid crystal layer are as parallel to the interface as possible. . Other objects, features, and operating states of the present invention will become clearer from the following description with reference to the drawings. Hereinafter, embodiments of the present invention will be described with reference to the drawings. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (Embodiment 1) [Active Matrix Liquid Crystal Display Device] The following describes an embodiment in which the present invention is applied to an active matrix color liquid crystal display device. Components with the same functions in the figure are indicated by the same symbols, and repeated explanations are omitted. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -16-494261 A7 ___B7 V. Description of the invention (Η) [Plane structure of the matrix section (pixel section)] Figure 1 is the initiative of the invention A plan view of one pixel and its surroundings of a matrix-type color liquid crystal display device (the oblique line in the figure indicates the transparent conductive film g 2). In the first figure, each pixel is arranged on a scanning signal (gate signal line or horizontal signal line) ) GL, counter electrode signal line (counter electrode wiring) CL, and 2 video signal lines (suction electrode line or vertical signal line) DL (in the area surrounded by 4 field lines). Each pixel includes a thin film transistor TFT, a storage capacitor C s t g, a pixel electrode PX, and a counter electrode CT. In the figure, the scanning signal lines GL extend opposite to the voltage signal lines C L in the left-right direction, and a plurality of them are arranged in the up-down direction. The video signal line D L extends to the up-down direction, and many lines are arranged in the left-right direction. The pixel electrode PX is connected to the thin-film transistor TFT via the source SD1, and the counter electrode CT and the counter voltage signal line CL are integrated. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The two pixels adjacent to each other along the image signal line D L are folded in the plane structure when the first image is bent on line A. The reason is that the opposing voltage signal line CL is made common by the two adjacent pixels along the video signal line DL, the electrode width of the opposing voltage signal line CL is enlarged, and the resistance of the opposing voltage signal line CL is reduced. . In this way, it is easier to transfer

The counter electrode CT, which supplies the pixels in the left and right directions with sufficient counter voltages, 〇 The pixel electrode PX and the counter electrode CT face each other, and the liquid crystal LC is controlled by the electric field between each pixel electrode PX and the counter electrode c T. The optical state ^ paper size is applicable to the Chinese national standard (0 ~ 5), 8 specifications (210/297 mm)-17-494261 A7 _ B7_ V. Description of the invention (15) in order to control the display. The pixel electrode P X and the counter electrode c T are formed in comb-like shapes, and elongated electrodes are formed in the upper and lower directions of the figure, respectively. The number of counter electrodes CT in one pixel 0 (the number of comb teeth) must be maintained in a relationship of 0 = P + 1 with the number of pixel electrodes PX (the number of comb teeth) (in this embodiment, 0 = 3, p = 2. The reason is that the counter electrode CT and the pixel electrode PX are alternately arranged, and the counter electrode CT must be adjacent to the video signal line DL. In this way, the counter electrode C can be used to shield the video signal line The power lines generated by DL avoid the influence of the electric field between the counter electrode CT and the pixel electrode PX from the electric field generated from the image signal line DL. Because the counter electrode CT is often supplied with a potential from the outside through the counter voltage signal line DL described later, Therefore, its potential is very stable. Therefore, even if it is adjacent to the image signal line DL, its potential does not change. Therefore, the geometric position between the pixel electrode PX and the image signal line DL becomes far away, so the pixel electrode PX and the image signal line The parasitic capacitance between DL is greatly reduced, and the variation caused by the image signal voltage of the pixel electrode potential V s can be suppressed. Therefore, crosstalk (called a picture of vertical stains) generated in the vertical direction can be suppressed. The electrode width of the pixel electrode PX and the counter electrode CT printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is 6 // m. In order to apply a sufficient electric field to the liquid crystal layer in the thickness direction, the width is set. In order to be sufficiently larger than the thickness of the liquid crystal layer described later, 3.9 // m, and in order to increase the aperture ratio as much as possible, it is formed as thin as possible. In order to prevent disconnection, the electrode signal width of the image signal line DL is formed as shown in the figure. The element electrode PX and the counter electrode CT are slightly wider than 8 μm. At this time, the electrode width of the image signal line DL is set to the adjacent counter electrode CT. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297). (Mm) 111-494261 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7__V. Description of the invention (16) Less than twice the width of the electrode. If the width of the electrode of the image signal line 0 L is based on the yield When it is determined, the electrode width of the counter electrode c τ adjacent to the video signal line 0 L is set to be more than one-half of the electrode width of the video signal line D ^. The reason is to use two pairs of opposite sides. The electrode CT absorbs the power lines generated from the image signal line DL. In order to absorb the power lines generated from a certain electrode width, an electrode having an electrode width larger than its width is required. Therefore, as long as the opposite electrodes CT on both sides absorb the image signal lines DL separately The power line generated by one half of the electrode (4 vm) is sufficient, so the electrode width of the counter electrode CT adjacent to the image signal line DL is set to more than half. In this way, the influence of the image signal can be used to prevent crosstalk. Especially generated in the up-down direction (cross-talk in the vertical direction). The scanning signal line GL sets the electrode width so as to satisfy the gate GT that allows the scanning voltage to be fully applied to the terminal pixels (the opposite side of the scanning electrode terminal GTM described later). The required resistance value. The counter voltage signal line C L also sets the electrode width so as to satisfy the resistance value required for the counter electrode C T of the pixel (the opposite side of the common bus line C B to be described later) that the counter voltage can be applied to the terminal. The electrode interval between the pixel electrode P X and the counter electrode C T is changed according to the liquid crystal material used. The reason is that because the electric field strength that achieves the maximum transmittance varies according to the liquid crystal material, the electrode interval is set in accordance with the liquid crystal material so that the signal voltage can be set at the withstand voltage of the video signal driving circuit (signal driver) used. The maximum transmittance is produced in the maximum amplitude range. When a liquid crystal material described later is used, the electrode interval is 16 / zm. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 494261 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (17) [Sectional structure of the matrix department (pixel unit)] Figure 2 is a cross-sectional view taken along line 3-3 in Figure 1. Fig. 3 is a sectional view of the thin film transistor TF T taken along line 4 to 4 in Fig. 1. Fig. 4 is a sectional view of the storage capacitor C s t g along line 5-5 in Fig. 1. As shown in Figs. 2 to 4, a thin film transistor TFT, a storage capacitor Cs tg, and an electrode group are formed on the lower transparent glass substrate SUB 1 side with the liquid crystal layer LC as a reference, and a color is formed on the upper transparent glass substrate SUB 2 side. Filter FIL, black matrix pattern BM for shading. Alignment films 0 RI 1 and 0RI 2 that control the initial alignment of the liquid crystal are provided on the inner (liquid crystal LC side) surface of each transparent glass substrate SUB 1 and SUB 2, and on the outer surface of each transparent glass substrate SUB 1 and SUB 2 A polarizing plate that intersects the polarizing axis perpendicularly. [T F T substrate] First, the structure of the lower transparent glass substrate S U B 1 side (T F T substrate) will be described in detail. [Thin Film Transistor T F T] After applying a positive bias to the gate electrode GT of the thin film transistor TFT, the channel resistance between the source and the sink decreases. If the bias voltage becomes zero, the channel resistance increases. As shown in Figure 3, the thin-film transistor TFT has a gate GT and a gate insulating film GI. It is composed of i-type (straight, intrinsic, impurity doped with non-conductive type) amorphous silicon (S i). The paper size of the i-type semiconductor is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) — -20-494261 A7 B7 V. Description of the invention (18) Layer AS, a pair of source SD1, sink SD2. The source and the sink are originally determined according to the polarity of the bias therebetween. In the circuit of the liquid crystal display device, the polarity is reversed during the operation, so the source and the sink are replaced during the operation. In the following description, for convenience of explanation, one side is set as a source, and the other is set as an sink. [Gate G T] The gate G T and the scanning signal line G L are continuous, and a part of the scanning signal line G L is a gate G T. The gate G T is a part that exceeds the active area of the thin film transistor T F T and is formed larger than its shape so as to completely cover (when viewed from below) the i-type semiconductor layer AS. In this way, in addition to the effect of generating the gate G T, the i-type semiconductor layer A S is prevented from being irradiated with external light and backlight. In this embodiment, the gate G T is formed of a single-layer conductive film g 1. The conductive film g 1 is an aluminum film formed by, for example, sputtering, and an anodized aluminum film AOF is provided on the aluminum film. [Scanning Signal Line G L] Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy The scanning signal line G L is composed of a conductive film g 1. The conductive film g1 of the scanning signal line GL is formed in the same process as the conductive film g1 of the gate GT and is integrated. The gate voltage V g of the external circuit is supplied to the gate GT via the scanning signal line GL. An anodic oxide film AOF of aluminum is also provided on the scanning signal line GL. The part crossing the image signal line DL is formed to be small and double-forked in order to reduce the probability of a short circuit with the image signal line DL, so that in the event of a short circuit, the paper standard of China can be adapted to the Chinese National Standard (CNS) A4 specifications (210X297 mm) -21 494261 A7 B7 V. Description of the invention (l9) Use laser correction to separate the short circuit [opposite electrode c conductive film of the counter electrode layer g oxide film A0F In this embodiment, No. The maximum driving voltage of the line DL is V d, the body element TF d gh), and the voltage Δ V can be used as the integrated electric AC voltage T] c T is composed of the gate G 1. Opposite electricity. The intermediate DC of the driving voltage m a X of the counter voltage V C O m on the counter electrode C T becomes a potential of s when the circuit is in an open state. However, if the power supply voltage of Hillow is reduced by T and the scanning signal CT is also applied, the opposing electrical system is set to a field voltage that is relatively lower than the potential of V dmi η (I hope the image signal is about half the line GL is the same. * Set The anode voltage of aluminum V c 〇m 〇 is applied to the image signal and the maximum level is to make the thin film transistor Field Throu- drive circuit, as long as it is applied, please read the precautions on the back before filling in the Intellectual Property Bureau staff of the Ministry of Economic Affairs Printed by a consumer cooperative [opposite voltage signal line CL] The opposing voltage signal line CL is composed of a conductive film g1. The conductive film g1 of the opposing voltage signal line CL is connected to the gate GT and the scanning signal line GL, It is formed in the same process as the conductive film g 1 of the counter electrode CT, and is integrated with the counter electrode CT. An external circuit supplies the counter voltage Vc om to the counter electrode CT via the counter voltage signal line CL. The voltage signal line CL is also provided with an aluminum anodized film AOF. The portion crossing the image signal line DL is the same as the scanning signal line GL, and is formed to reduce the probability of a short circuit with the image signal line DL. It is small and double-forked, so that in case of a short circuit, the paper size can be used in accordance with Chinese National Standard (CNS) A4 (210X297 mm) -22-494261 A7 B7 V. Description of the invention (20 laser correction [Insulation film GI] The insulation film GI is used as a gate insulation film for supplying electric field to the semiconductor layer AS in the thin film transistor TFT. The insulation film GI is formed on the gate GT and the scanning signal line GL. Upper layer. The insulating film GI is made of, for example, a silicon nitride film formed by plasma CVD, and is formed to a thickness of about 1 200 to 2700 A (about 2400 A in this embodiment). The gate insulating film GI surrounds the entire matrix The part AR and the peripheral part are removed so as to expose the external connection terminals DTM and GTM. The insulating film GI can insulate the scanning signal line GL, the opposing voltage signal line CL and the image signal line DL. [I-type semiconductor layer AS] i-type semiconductor layer The AS system is formed of amorphous silicon to a thickness of 2000 to 2200 A (a film thickness of 2000 A in this embodiment). The d0 layer is an N (+) type non-doped phosphorous (P) doped for ohmic contact. Crystalline silicon semiconductor layer, only remaining below There is an i-type semiconductor layer AS, and a conductive layer dl (d2) is provided on the upper side. The i-type semiconductor layer AS is provided between the scanning signal line GL and the intersection of the opposing voltage signal line CL and the image signal line DL. The i-type semiconductor layer AS of the cross section can reduce the short circuit between the scanning signal line GL and the opposing voltage signal line CL and the image signal line DL of the cross section. This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ) Please read the note on the back page printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -23-494261 A7 ---_ _B7 V. Description of the invention (21) [Source SD1, sink SD2] Source SD1, sink The pole SD2 is composed of a conductive film d 1 which contacts the N (+) -type semiconducting gastric cavity d 〇 and a conductive film d 2 formed thereon. The conductive film d 1 is a C r film formed by a sputtering method. And a thickness of 5 0 to 1 0 0 A is formed (about 6 0 0 A in this embodiment. If the thickness of the r film is too thick, the stress increases, so it cannot exceed a film thickness of about 2000A. The C r film can improve the adhesion with the N (+) type semiconductor layer d 0, and is used in order to prevent the Aj? Of the conductive film d 2 from diffusing into the N (+) type semiconductor layer d 0 (that is, the barrier layer). In addition to the Cr film, the conductive film d1 may be a high-melting-point metal (Mo, Ti, Ta, w) film, or a high-melting-point metal silicide (MoSi2, TiSi2, TaSi2, WSi2) film. The conductive film d 2 is formed to a thickness of 3,000 to 5,000 A (about 4000 A in this embodiment) by sputtering of Aj ?. The stress of the printed A film by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is smaller than that of the C r film, which can be formed into a thicker film thickness, and can reduce the source SD 1, the sink SD 2, and the image signal line DL. The resistance value may actually exceed the step difference caused by the gate GT or the i-type semiconductor layer AS (the step effective area can be improved). The conductive film d 1 is formed with the same mask pattern. After the conductive film d 2 is patterned, the same mask is used, or the conductive film d1 is used, and the conductive film d2 is used to remove the N (+) type semiconductor layer dO. That is, the portions other than the conductive films d1 and d2 of the N (+)-type semiconductor layer do on the i-type semiconductor layer AS are removed by self-alignment. At this time, the N + paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 24-494261 A7 B7 V. Description of the invention (22) The thickness of the semiconductor layer d 0 is all etched, so i-type semiconductors The surface part of layer AS is also etched, but it can be solved as long as the etching time is controlled. Please read the precautions on the back and fill in this page. [Image signal line DL] The image signal line DL is connected to the source SD1 and the sink electrode. SD2 is composed of a second conductive film d2 and a third conductive film d3 in the same layer. The image signal line D L is integrated with the sink electrode S D 2. It is formed of a transparent conductive layer g 2. This transparent conductive transparent conductive film (Indium-Tin- is formed to a thickness of about 100A to 2000A and a thickness of about 400A). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Pixel electrode PX] The pixel electrode PX film g 2 is formed by 1 degree (spray method Oxide: ITO) (1 in this embodiment, as in this embodiment) Because penetrating light can improve the whiteness of the electrode when it is opaque than described later, because no electricity is applied and the polarizer is configured so as to be in the normally black mode), although this part can show good quality and can achieve a sufficient pair [storage capacity C st is the maximum transmittance of the pixel electrode when it is transparent, so the color that penetrates this part is displayed. Therefore, compared with the figure, a brighter display can be performed. At this time, when pressed, the liquid crystal molecules maintain the initial alignment state, and a black display is performed in this state (making it a normal pixel electrode is transparent, and light will not pass through the black. Therefore, the maximum transmittance can be increased, and the ratio 0 g This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 25-494261 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (23) The pixel electrode PX is formed and connected At the opposite end of the thin film transistor TFT, it overlaps with the opposing voltage signal line CL. As can be seen from FIG. 4, the overlap is formed by using the pixel electrode PX as an electrode PL 2 and the opposing voltage signal line CL. As a storage capacitor (capacitive element) Cstg of the other electrode PL 1. The dielectric film of the storage capacitor Cstg is composed of the insulating film GI and the anodic oxide film AOF used as the gate insulating film of the thin film transistor TFT. As shown in Fig. 1, on a plane, the storage capacitor Cs tg is formed on a portion where the width of the conductive film g1 of the opposing voltage signal line CL is enlarged. [Protective film PSV 1] The crystal TFT is provided with a protective film PSV1. The protective film P SV 1 is mainly formed to protect the thin film transistor TFT from moisture. Generally, a material with high transparency and excellent resistance is used. The protective film P SV 1 is for example used It consists of a silicon oxide film or a nitrided sand film made of a plasma CVD device, and its film thickness is about 1 // m. The protective film P SV 1 surrounds all the matrix portions AR, and its peripheral portion is removed to expose the external connection terminal DTM. GTM. The relationship between the thickness of the protective film P SV 1 and the gate insulating film GI is that the former is formed thicker considering the protective effect, and the latter is formed thinner considering the transconductance gm of the transistor. The protective film P SV 1 with high protective effect It is formed to be larger than the gate insulating film GI in order to protect a wide range of peripheral parts. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -26-494261 A7 B7 V. Description of the invention (24) [Color filter Optical device substrate] The structure of the upper transparent glass substrate SUB 2 side (color filter substrate) will be described below with reference to FIGS. 1 and 2. [Light-shielding film B M] A light-shielding film B M is formed on the upper transparent glass substrate SUB 2 side (the so-called Color matrix) to prevent the penetrating light emitted from the unnecessary gap (the gap between the pixel electrode PX and the counter electrode CT) from entering the display surface to reduce the contrast. The light-shielding film BM prevents the backlight from entering the i-type. The function of the semiconductor layer AS. That is, the i-type semiconductor layer AS of the thin-film transistor TFT is held by a light-shielding film BM located on the upper and lower sides and a larger gate GT, so natural light and backlight from the outside will not be illuminated. The inside of the closed polygonal contour line of the light-shielding film BM shown is an opening where no light-shielding film BM is formed. The outline pattern is only one example. If it is necessary to enlarge the opening portion, it may be formed as a light-shielding film BM1 shown by a dotted line in the first figure. The direction of the electric field in the enlarged area in Figure 1 is not uniform, but the display of this part corresponds to the image information in the pixel on a 1: 1 basis. If it becomes black when it is black, it becomes white when it is white, so it can be used as a display. Partial use. The dividing line in the vertical direction in the figure is determined according to the alignment accuracy of the upper and lower substrates. If the alignment accuracy is higher than the electrode width of the opposite electrode CT adjacent to the image signal line DL, it is set between the widths of the opposite electrodes, that is, The opening can be enlarged. The light-shielding film BM has a light-shielding property and is formed of a highly insulating film to prevent the electric field between the pixel electrode P X and the counter electrode C T from being affected. This implementation of this paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives -27-494261 A7 B7 Economy Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau. 5. Description of the Invention (25) In the example, a black pigment is mixed in a resist material to form a thickness of about 1 • 2 β m. The light-shielding film B M is formed around each pixel. It is grid-like »Dividing an effective display area of one pixel with this grid. Therefore, the light-shielding film BM can make the outline of each pixel extremely obvious. That is, the light-shielding film BM has a black matrix and an i-type semiconductor layer AS. There are 2 functions such as light shielding. The light shielding film BM is formed as a frame on the peripheral part, and its pattern is continuous at 3TU 55C. It has many dots. The first rg |The light-shielding film B Μ extends to the outside of the closed portion SL in order to prevent leakage light of reflected light caused by an actual device such as a personal computer from entering the matrix portion. On the other hand, the light-shielding film B Μ is provided on the edge of the substrate SU Β 2 About 0 • 3 1 • 0 mm or so inside> Avoid cutting the substrate SU Β 2 me. Breaking area 〇 [Color filter FIL] The color filter FIL is repeated at the position facing the pixel Red, green, and blue stripes 0 The color filter FIL overlaps the edge portion of the light-shielding film B M. The color filter FIL can be formed as described below. First, an acrylic resin is formed on the surface of the upper transparent glass substrate SUB 2. After dyeing the substrate, the optical lithography technology is used to remove the dyeing substrate outside the red filter formation area. Then, the red dye is used. Dye the dyeing base material 9 and perform a fixed treatment to form a red M light filter R 〇 Then perform the same operation in turn to form a green filter G blue filter B 〇 This paper size applies Chinese National Standard (CNS) A4 specifications (210X297) Cents) a 28-

494261 A7 B7 V. Description of the invention (26) [External coating film 0 C) Please read the precautions on the back before filling%. The external coating film 0C on this page is to prevent the dye of the color filter F 丨 L from leaking to the liquid crystal. LC and flattening the step difference caused by the color filter FIL and the light-shielding film BM are provided. The outer coating film C is formed of a transparent resin material such as acrylic resin and epoxy resin. [Liquid Crystal Layer and Polarizing Plate] A liquid crystal layer, an alignment film, and a polarizing plate will be described below. [Liquid Crystal Layer] The liquid crystal material LC is a nematic liquid crystal with a dielectric constant anisotropy of 13 · 2 and a refractive index anisotropy of An. 0 · 081 (5 89 nm, 20 ° C). . The thickness (gap) of the liquid crystal layer was 3 · 9 / zm, and the damping Δη · d was 0 · 316. The value of △ η · d, which is printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, can make the alignment film and polarizing plate described later combine to produce the maximum transmittance when the liquid crystal molecules rotate from the grinding direction to the electric field direction by 45 degrees. . It is possible to generate transmitted light with almost no wavelength dependence in the visible light range. The thickness (gap) of the liquid crystal layer is controlled using polymer beads. The liquid crystal material LC is not particularly limited, and its dielectric anisotropy Δε may also be negative. The larger the value of the dielectric anisotropy Δε, the lower the driving voltage can be. The smaller the refractive index anisotropy △ η, the thicker the thickness (gap) of the liquid crystal layer can be, which can shorten the sealing time of the liquid crystal and reduce the unevenness of the gap. The paper size of the table applies to the Chinese National Standard (CNS) Α4 specification (210X29 * 7 mm) -29-494261 Α7 Β7 V. Description of the invention (27) (Please read the precautions on the back before filling this page) Make 1 ^ 'LCD The material physical properties of the material are opposite to that of the transparent conductive film or the electrode element; after the light intensity of the pole portion is transmitted, it is known that the torsional elasticity coefficient K 2 of the liquid crystal material is strongly dependent. The reason is that the in-plane torsional deformation in the openings between the electrodes caused by the transverse electric field through which the I-rays pass passes through the attenuation of the upper portion of the transparent conductive film electrode to match the inherent torsional elasticity of the liquid crystal material K 2 Curvature occurs. Therefore, in order to increase the penetration of light through the electrode portion of the transparent conductive film and increase the brightness of all the openings of the electrode including the transparent conductive film, as long as a liquid crystal material having a small torsional elastic coefficient K 2 is used to reduce the attenuation Curvature. The effect of the torsional elasticity coefficient K 2 will be described in Example 11. In this Example 1, the torsional modulus of elasticity K 2 was measured at room temperature by 5.1 × 10-12 NO. The torsional modulus of elasticity K 2 was measured by Koji, Okano and Kosuke Kobayashi. It is described in 5 years) that it can be calculated by measuring the threshold voltage of a twisted liquid crystal cell. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Alignment film] The alignment film 0 R I is made of polyimide. The polishing direction is that the upper and lower substrates are parallel to each other, and the initial alignment angle inflammation LC formed by the tangential alignment direction RDR and the applied electric field direction EDR (Ex) is 75 degrees. Figure .19 shows the relationship. If the dielectric constant anisotropy Δ ε of the liquid crystal material is positive, the initial alignment angle formed by the initial alignment direction RDR and the applied electric field direction ERR This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm 1 1 30-494261 A7 B7 V. Description of the invention (28) 0 LC must be above 45 degrees and below 90 degrees. If the dielectric anisotropy Δ ε is negative, it must be greater than 0 degrees and less than 45 degrees. In the process, the polishing directions are formed on the alignment films ORI 1 and ORI 2 so as to be parallel to each other, so that the initial pretilt angle of the liquid crystal molecules at the upper and lower interfaces of the liquid crystal layer that affects the display between the electrodes and the electrodes becomes a jet state. The liquid crystal molecules have the effect of compensating optical characteristics with each other, and can produce wide viewing angle characteristics. When the polishing direction is formed on the alignment films ORI 1 and ORI 2 in an anti-parallel state, the liquid crystal molecules at the upper and lower interfaces of the liquid crystal layer are pretilted. The angles are parallel, and the average tilt angle in the liquid crystal layer can be larger. However, setting the pre-tilt angle to 10 degrees or less will produce the same effect as the present invention. ] The polarizing plate P 0 L is a G 1 2 2 ODU manufactured by Nitto Denko Corporation. The direction of the polarizing plate penetration axis MAX 1 of the polarizing plate POL 1 on the lower side is aligned with the grinding direction RDR, and the upper polarizing plate P is aligned. The polarized light transmission axis MAX 2 of 0 L 2 intersects it perpendicularly. Fig. 19 shows its relationship. In this way, electricity can be generated as the pixel applied to the present invention (between the pixel electrode PX and the counter electrode CT). Voltage), the normal closing characteristic that the transmittance also increases. When no voltage is applied, a good black display can be achieved. A transparent conductive film is formed on one side of the polarizing plate P 0 L itself in order to prevent static electricity from the outside. Influence and reduce its resistivity value. The size of this paper applies the Chinese National Standard (CNS) A4 specification (210'〆297mm) '-31-(Please read the precautions on the back before filling this page) Ί1Τ

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 494261 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

A7 B7 5. Description of the invention (29) A transparent conductive film may also be formed between the upper substrate s U B 2 and the upper polarizing plate POL 2. [Structure of Matrix Peripheral] FIG. 5 is a plan view showing a main part of a matrix (AR) around a display panel PNL including upper and lower glass substrates SUB1 and SUB2. Fig. 6 is a section near the external connection terminal G TM to which the scanning circuit should be connected on the left side, and a section near the closed portion without the external connection terminal on the right side. When manufacturing the panel, if the size of the panel is small, in order to increase the production volume, a glass substrate is used to process many devices at the same time and then divided. If the size is large, the size of any variety is standardized in order to share manufacturing equipment. After reducing the glass substrate, it is reduced to the size of each type, and the glass is cut after all operations. Figures 5 and 6 show examples of the latter. Figures 5 and 6 show the state after cutting the upper and lower substrates SUB 1 and SUB 2. L N represents the edge before cutting the two substrates. In any case, there are external connection terminal groups Tg, Td and terminal COT (upper and left sides in the figure) in the completed state. The size of the upper substrate SBU 2 is limited to the inside of the lower substrate SUB 1, So that it is exposed. The terminal groups T g and T d consist of a plurality of terminals GTM for scanning circuit connection, D TM for video signal circuit connection, and lead wires of integrated circuit chips C Η I as described later. The unit name of the carrier package TCP (Figures 16 and 17). The lead wires from the matrix section of each group to the external connection terminal section are inclined closer as they approach the ends. The reason is to connect the DTM and GTM terminals of the display panel PNL (please read the precautions on the back before filling this page) 1. · This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -32- 494261 A7 ___ B7 V. Description of the invention (30) Alignment pitch of packaged TCP and connection sub-spacing of each packaged TCP. The counter electrode terminal C TM is a terminal for supplying a counter voltage to the counter electrode C T from an external circuit. The opposing voltage signal line c L of the matrix part is drawn to the opposite side (right side in the figure) of the scanning circuit terminal GTM, and the opposing voltage signal lines are concentrated by a common bus line CB and connected to the opposite electrode terminal C. Ding M. Between the transparent glass substrates SUB1 and SUB2, a closed pattern SL is formed along the edges of the transparent glass substrates to seal the liquid crystal LC except for the liquid crystal sealing inlet I N J. The sealing material is made of, for example, epoxy resin. The layers of the alignment films OR I 1 and OR I 2 are formed inside the closed pattern SL. The polarizing plates P0L1 and P0L2 are respectively formed on the lower transparent glass substrate SUB1 and the upper transparent glass substrate SUB2 on the outer side surfaces. The liquid crystal LC is enclosed between the lower alignment film OR I 1 and the upper alignment film OR I 2 in the direction in which the liquid crystal molecules are set, and the area is divided by the closed pattern S L. The lower alignment film OR I 1 is formed on the upper portion of the protective film P S V 1 on the lower transparent glass substrate S U B 1 side. The liquid crystal display device is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The liquid crystal display device is on the lower transparent glass substrate SUB 1 side, and the upper transparent glass substrate SUB 2 side is superimposed with various layers. A closed pattern SL is formed on the substrate SUB 2 side, and the lower transparent part is overlapped. The glass substrate SUB1 and the upper transparent glass substrate SUB2 are formed by injecting liquid crystal LC from the opening INJ of the sealing material SL, closing the injection port INJ with epoxy resin, etc., and cutting off the upper and lower substrates. [Ministry of Gates] This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 33-Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (31) Figure 7 A is from the connection A plan view of the connection structure of the scanning signal line GL of the matrix to its external connection terminal G TM. Figure 7B is a sectional view taken along line B-B in Figure 7A. In the figure, the inclined wiring portion is indicated by a straight line corresponding to the vicinity of the right center in FIG. 5. The dividing line drawn directly by A 0 photoresist, that is, the photoresist pattern of selective anodizing. Therefore, the photoresist is removed after anodizing, and the pattern A0 in the figure will not remain as a finished product, but because the oxide film AOF is selectively formed on the gate wiring GL as shown in the cross-sectional view. , So its trajectory will stay. In the plan view, the left side, which is based on the differentiation line A 0 of the light-resistant agent, is covered with the light-resistant agent, and the area where the anodization does not occur, that is, the right side is the area where the anodization is exposed from the light-resistant agent. On the surface of the anodized Aj? Layer gl, a base oxide six 520 3 film is formed into 0 ?, and the volume of the conductive part below is reduced. Of course, it is necessary to set an appropriate time, voltage, etc. to perform anodization so that the conductive parts remain. For the convenience of explanation, the Aj? Layer g 1 in the figure is indicated by diagonal lines, but the areas not anodized form a comb pattern. The purpose is that, because the width of the Aj? Layer is large, debris is generated on the surface. Therefore, the width of each branch is reduced, and many branches are concentrated in parallel to prevent the occurrence of impurities and to disconnect the broken wires. Sacrifice suppression of probability and conductivity is minimized. The gate terminal GTM is composed of an AP layer gl and a transparent conductive layer g 2 which protects the surface thereof and improves connection reliability with T C P (Tape Cai ^ Package). The transparent conductive film g 2 is a transparent conductive film I TO made in the same process as the pixel electrode PX. The conductive layers dl and d2 formed on the A layer and the side of the gl are applied to compensate for the size of this paper. Chinese National Standard (CNS) A4 specifications (210X297 public envy) -34-494261 A7 B7 Employees ’Intellectual Property Bureau Cooperative printed 5. Description of the invention (32) 1 Poor connection between IA layer and transparent conductive layer g 2 Connect C layer d 1 with good connectivity on layer A and transparent conductive 1! I electrical layer g 2 > Reduce connection resistance And 1 1 is provided with the conductive layer d 2 because it is formed using the same mask as the conductive layer d 1. I 1 | Remaining. 0 Read 1 Read 1 I Scan the insulating film GI in the plan view. 1 | The side protective film PSV 1 is also formed to be more to the right than its dividing line. J is located at the left end. Note 1 I. The terminal GT of event 1 can be in contact with the external circuit exposed from it. 1 Shows that the gate line GL and the gate terminal pair are right, but in fact, y is such a pair. Fill in j < Ben 1 as shown in Figure 7 AB above and below to form a terminal group page 1 1 T g (figure 5), the left end of the gate electrode is extended across the cutting area of the substrate 1 during the manufacturing process and is shorted by the wiring S Η g (not shown). During the manufacturing process, the short-circuit line S Η g It can supply power during anodizing and prevent the alignment film. RI 1 prevents electrostatic damage during grinding. 1 1 IC suction terminal D T M] 4 1 1 1 Figure 8 A shows the connection from the image signal line DL to its external The plan view of the connection up to terminal% 1 DT Μ 0 The 8 B figure is a sectional view taken along line B — 1 1 B in the 8 A figure. The figure corresponds to the direction of the j tjJ diagram near the upper right of the 5th figure 1 1 slightly There is a change in the direction of the right end equivalent to the substrate SUB 1 The end 〇1 Τ ST d is the inspection terminal. 0 The external circuit is not connected to this terminal but 1 1 I is wider than the wiring section so that the probe is connected to hmx. The same suction terminal 1 丨 IDT Μ is also wider than the wiring section. In order to be connected to an external circuit, the external connection 1 1 I suction terminal D DT is arranged in the up and down suction terminal DT Μ as shown in FIG. 1 1 and constitutes a terminal group T d as shown in FIG. 1 1 This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 35-494261 A7 B7____ V. Description of the invention (33) The cutting line is further extended. In the manufacturing process, in order to prevent electrostatic damage 'all Shorted by wiring SHd (not shown). As shown in FIG. 8A, the 'inspection terminal T S T d is formed on the video signal line D L spaced apart. The attracting terminal DTM is formed of two single-layer transparent conductive layers 2 2 and is connected to the image signal line DL in a portion where the gate insulating film G I is removed. This transparent conductive film g2 is used in the same way as the gate electrode GTM. A transparent conductive film I TO formed in the same process as the pixel electrode PX. The semiconductor layer AS formed on the end of the gate insulating film G I etches an edge of the gate insulating film G I into an inclined shape. In order to connect to an external circuit, the protective film PSV1 on the suction terminal DTM is removed. In the lead-out wiring from the matrix portion to the suction terminal portion DTM, the layers d1 and d2 located at the same level as the image signal line DL are formed halfway to the protective film P SV 1, and the protective film P SV 1 and the transparent conductive film g 2 connection. The purpose is to protect the Aj? Layer d2, which is easily corroded, with the protective film P S V 1 as a suction seal pattern SL. [Counter electrode terminal CTM] FIG. 9A shows a plan view of the connection from the counter voltage signal line C L to its external connection terminal C TM. Figure 9B is a sectional view taken along line B-B in Figure 9A. This figure corresponds to the vicinity of the upper left of FIG. 5. Each of the opposing voltage signal lines C L is concentrated by the common bus line C B and then led out to the opposing electrode terminal C TM. The common bus line C B is formed by stacking conductive layers d 1 and d 2 on the conductive layer g 1. The purpose is to reduce the resistance of the common busbar CB, so that the opposing voltage is sufficient from the external circuit. This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) ~ one -36-(Please read the back first (Please fill in this page again).

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 4261 A7 --------- B7_ _ V. The invention description (34) is supplied to the opposite voltage signal lines C L. According to this structure, the resistance of the common bus bar can be reduced without adding an additional conductive layer. The conductive 21 of the common bus bar CB is not anodized in order to be connected to the conductive layer d1 and the conductive layer d2, and is exposed from the gate insulating film G1. The counter electrode terminal CTM is formed by stacking a transparent conductive 靥 g 2 on the conductive layer g1. This transparent conductive film g 2 is the same as the other terminals, and is used as the transparent conductive film I D0 formed in the same process as the pixel electrode PX. In order to protect the surface and prevent corrosion, the conductive layer gl is coated with a transparent conductive layer g2 having high durability. [All Equivalent Circuits of Display Device] Figure 10 shows the wiring diagram of the equivalent circuit of the display matrix and its peripheral circuits. The diagram is a circuit diagram, but it corresponds to the actual geometric configuration. AR is a matrix array in which many pixels are arranged into a quadratic element. In the figure, X is the image signal line DL, and .G, B, and R represent green, blue, and red pixels, respectively. 1, 2, 3 ... end are added in the order of the scan timing. Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The scanning signal line Y is connected to the vertical scanning circuit V, and the image signal line X is connected to the image signal driving circuit Η. SU P is a power supply circuit including a plurality of divided and stable voltage sources generated from one voltage source, and information for converting CRT (cathode ray tube) information generated from a main device (high-level arithmetic processing device) into a TFT liquid crystal display device. Circuit of information. The dimensions of this paper are applicable to the national standard of China.) 494261 A7 B7 V. Description of the invention (35) [Driving method] No. 11 Chart The conductive film of the resistive metal in Example 1 has reduced waveform distortion. Low signal line voltage. That is, the driving waveforms of the liquid crystal display device of the present invention are shown by applying an amplitude value of a selected voltage to), v g (i) V g 1 h and V h to the rectangular wave. Because the counter voltage signal line c L is composed of low current g 1 such as aluminum, the load impedance is small. Therefore, the counter voltage can be changed to an AC voltage, and the down voltage can be formed as Vch and Vc1. The binary exchange becomes synchronized, and the non-selected voltage of the scanning signal Vg (i-1 is changed to a binary value of 1 1 during each scanning period. The amplitude value of the opposite voltage is set to the same as the non-selected. Video signal The voltage is the voltage from the desired pressure minus one-half of the amplitude of the opposite voltage. Please read the precautions before filling out this page. The counter voltage printed by the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs can also be DC, but In the case of AC, the maximum amplitude of the video signal voltage can be reduced, and a video signal drive circuit (signal driver) with a low withstand voltage can be used. In Examples 2 and 3, because the opposing voltage signal line CL is made of a transparent conductive film g 2 is formed, so the resistance is high, and it is better to use the DC method for the opposite voltage. [Function of the storage capacitor C stg] The storage capacitor C stg is for writing into pixels (thin-film transistor TFT It is set up for long-term storage of image information after the circuit is broken. The method of applying an electric field parallel to the substrate surface and the method of applying an electric field to the substrate surface of the present invention are different, because there is almost no way for the pixel electrode and the counter @ 电This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) 38-494261 A7 B7 V. Description of the invention (36) (Please read the precautions on the back before filling this page) Storage capacitor c S tg), so the storage capacitor c S tg cannot store the image information in the pixels. Therefore, the storage capacitor C stg is a necessary component when the electric field is applied parallel to the substrate surface. The storage capacitor C stg is in a thin film When the transistor TFT is switched, the influence of the gate potential change Δν g on the pixel electrode potential vs can be reduced. It is expressed as follows: △ Vs = {Cgs / (Cgs + Cstg + Cpix)} X Δ V g Ministry of Economy In the above formula printed by the Intellectual Property Bureau's Consumer Cooperative, Cg s is a parasitic capacitor formed between the thin-film transistor TFT's GT GT and the source SD1, and Cp i X is formed between the pixel electrode PX and the counter electrode CT Of Between capacitors, AV s is the so-called field through voltage of the pixel electrode potential change caused by △ V g. This change amount Z \ V s becomes the cause of the DC component applied to the liquid crystal LC, but keeps The larger the capacitor C stg, the smaller its value becomes. The reduction of the DC component applied to the liquid crystal LC can increase the life of the liquid crystal LC, and can reduce the so-called sticking phenomenon of the previous image remaining when the liquid crystal display is switched between day and day. It is stated that the gate GT increases to the extent that it can completely cover the i-type semiconductor layer As, but the area where it overlaps with the source SD1 and the sink SD2 increases, so the parasitic capacitor C gs increases and the pixel electrode potential VS is easy to occur. The opposite effect of receiving the influence of the gate (scan) signal Vg. However, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -39-494261 A7 B7 V. Description of the invention (37) The storage capacitor C s t g can be used to eliminate this disadvantage. [Manufacturing method] The manufacturing method of the substrate SUB 1 side of the liquid crystal display device will be described below with reference to Figs. 12 to 14. In the figure, the letter in the center is the abbreviation of the process name. The left side is the thin film transistor T F T part shown in Fig. 3, and the right side is the process during processing in the shape of the section near the gate terminal shown in Fig. 7. Except for Processes B and D, Processes A to I correspond to the processes that are distinguished for each photographic process. Any cross-sectional view in each process indicates the stage where the photoresist is removed and the photoresist is removed. In the present invention, the term "photographic treatment" refers to a series of operations from application of a light-resistant agent to development by selective exposure using a mask. The description will not be repeated. The following is a description of the process of differentiation. Process A, FIG. 12 uses the sputtering method to form Aj? — Pd, Aj? — Si on the lower transparent glass substrate SUB 1 composed of AN6 3 5 glass (trade name), with a film thickness of 3 〇 0 Ai-Ta, Aj? -Ti-Ta and other conductive films gl. After the photographic treatment, the conductive film g1 is selectively etched with a mixed acid solution of phosphoric acid, nitric acid and glacial acetic acid. The gate GT, the scanning signal line GL, the counter electrode CT, the counter voltage signal line CL, the electrode PL 1, the gate terminal GT M, the first conductive layer of the common bus line C Β, and the counter electrode terminal CTM are formed. The first conductive layer is connected to the gate electrode GTM anodized busbar SHg (not shown in the paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm)) 40-(Please read the precautions on the back first Please fill in this page again) Order printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs 494261 A7 B7 Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs printed by the Consumer Cooperatives 5. Illustration of Invention (38)), and the anode connected to the anodizing bus bar sHg Oxidation gasket (not shown). Process B, Fig. 12 uses direct drawing to form an anodizing mask A 0, and then dilutes 3% tartaric acid with ammonia to pH 6 · 2 5 soil 0.05 to a 1: 9 solution with ethylene glycol solution. The substrate SUB 1 was immersed in an anodic oxidation solution composed of a liquid, and its formation current density was adjusted to be 0.5 mA / cm 2 (constant current formation). Then, anodization is performed until the formation voltage 1 2 5 required to form a certain A j? 203 film thickness is reached. Then, it is preferable to keep this state for several tens of minutes (constant voltage formation). This step is very important when forming a uniform A $ 20 3 film. Therefore, the conductive film g 1 can be formed by anodizing, and an anodic oxide film having a thickness of 180 0A can be formed on the gate GT, the scanning signal line GL, the counter electrode CT, the counter voltage signal line CL, and the electrode PL 1. AOF. Process C, Fig. 12 Introduce ammonia, silane, and nitrogen into the plasma CVD device to form a silicon nitride film with a thickness of 2 250 A, and introduce silane gas and hydrogen into the plasma CVD device to form a film After an i-type amorphous silicon film having a thickness of 20000 A, hydrogen gas and a phosphine gas were introduced into a plasma CVD apparatus to form an N (+) type amorphous silicon film having a film thickness of 300 A. Process D, Fig. 1 3 This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297mm) 41 41 (Please read the precautions on the back before filling this page) 494261 A7 B7 V. Description of the invention (39) (Please read the precautions on the back before filling in this page) After photographic processing, use s F6, C c as dry etching gas to selectively etch N (+) type amorphous silicon film, i type amorphous The silicon film forms an island-shaped i-type semiconductor layer AS. Process E, Fig. 13 After photographic processing, S F 6 is used as a dry etching gas to selectively etch the silicon nitride film. Process F, FIG. 13 A transparent conductive film g 2 composed of an I TO film having a film thickness of 14 00 A is formed by a sputtering method. After the photographic treatment, the transparent conductive film g 2 is selectively etched by using a mixed acid solution of hydrochloric acid and nitric acid as an etching solution to form the uppermost layer of the gate electrode G TM, the suction electrode D TM and the counter electrode terminal CTM. 2 conductive layer. Process G, Figure 14: The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a conductive film dl made of CI * with a film thickness of 600 A by sputtering method, and forms A with a film thickness of 4000 A by sputtering method. Another conductive film d 2 is composed of Pd, Aj? — Si, Aj? — Ta, A meaning Ti—Ta, and so on. After photographic processing, the conductive film d 2 is etched with the same solution as in process B, and the conductive film dl is etched with the same solution as in process A to form the image signal line DL, the source SD1, the sink SD2, and the pixel electrode PX, The electrode PL2, the second conductive layer of the common busbar CB, the third conductive layer, and the short-circuited DTM busbar. This paper applies the Chinese national standard (CNS) A4 specification (210X297 mm) " " a 42-494261 A7 _ B7 V. Description of the Invention (4〇) Please read the item I on the back before filling in SHd (not shown) on this page. Then, CCp4 and Sf6 are introduced into the dry etching device, and an N (+) type amorphous silicon film is etched to selectively remove the N (+) type semiconductor layer do between the source and the sink. Process Η, Fig. 14 Introducing ammonia gas, silane gas, and nitrogen gas into a plasma CVD apparatus to form a silicon nitride film with a thickness of 1 / zm. After the photographic treatment, the silicon nitride film is selectively etched by a photoetching technique using S F 6 as a dry etching gas to form a protective film PSV1. P C Β 1] shows the driving state of the state of the panel PN path V (IC grain (C grain, left C grain)). T-bonding method (TA mounting, PC Β1 substrate, divided circuit substrate. The PC Β1 on the F shell SHD and the left flat cable system make the alcohol layer hold a lot of L and connect to the top picture. Grain (1 0 on each lower side) C P is such as B) Installation is installed as an image letter G P is a frame spring-shaped broken-side driving power is drawn as shown in the figure (a 43-printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [display panel PNL and driving circuit Fig. 15 of the substrate is the image signal driving circuit shown in Fig. 5 and the vertical scanning circuit CHI is used to drive the display panel PNL. 5 are driven by the vertical scanning circuit side I are driven by the image signal driving circuit side I As shown in Figures 16 and 17, using a carrier with IC chips C Η I for automatic driving to describe the drive circuit board for the drive circuit and drive signal board and the ground pad of the scanning signal drive frame. Soldering is provided on the shielded outer sheet. FC is a flat cable connected to the lower driver circuit board PC substrate 1. The flat cable is shown in the form of a stripe polyethylene layer and polyethylene. This paper applies the Chinese National Standard (CNS) A4 specification. (2 10X297 mm) 494261 A7 B7__ V. Description of the invention (4!) A cable supported by the implementation of tin-plated wires on phosphor bronze raw materials. [TCP connection structure] Figure 16 shows the drive circuit V and Image signal driving circuit: A cross-sectional structure view of a carrier package device TC P with integrated circuit chip CH I mounted on a flexible wiring substrate. Figure 17 shows the connection to a liquid crystal display panel. In the example, it is a cross-sectional view of the main part connected to the terminal G TM of the scanning signal circuit. In the figure, TTB is the input terminal and wiring section of the integrated circuit CH I. TTM is the output terminal and wiring of the integrated circuit CH I Each wiring part is made of, for example, copper, and each inner front end portion (commonly referred to as an internal lead) is connected to a bonding pad PAD of the integrated circuit CHI by a face-down bonding method. Terminals TTB, TMT outer front end (Generally referred to as the external lead) corresponding to the input terminal and output terminal of the semiconductor integrated circuit die C Η I, which are connected to the CRT / TFT conversion circuit and power supply circuit SUP by welding, and through the anisotropic conductive film ACF It is connected to the liquid crystal display panel PNL. The front end of the package TCP is connected to the panel and is covered with a protective film PSV1 that exposes the connection terminal G TM on the panel PNL side. Therefore, the external connection terminal CTM (DTM) is at least protected by the protective film P SV 1 or one of the packaging TC P, so it has strong resistance to corrosion. BF1 is a base film made of polyimide, etc. SRS is a solder resist that prevents solder from adhering to unnecessary parts during soldering. Closed pattern The gap between the upper and lower glass substrates on the outer side of the SL is washed by epoxy resin. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page). Spring. Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -44-494261 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (42) EPX and other protections, between the packaging TP P and the upper substrate S UB 2 Filled with silicone SIL for multiple protection. [Drive circuit board PCB2] Electronic parts such as IC, capacitors and resistors are mounted on the drive circuit board PCB2. The driving circuit substrate PCB 2 is provided with a power supply circuit that generates a plurality of voltage sources from a voltage source and is stable, and includes a CRT (cathode ray tube) generated by a main device (high-level arithmetic processing device) for converting information into a TFT liquid crystal. A circuit SUP for a circuit for displaying information for a device. C T is a connector connecting portion connected to a connector (not shown) connected to the outside. The driving circuit board P C B 1 and the driving circuit board P C B 2 are connected via a flat cable F C. [All Structure of Liquid Crystal Display Module] Fig. 18 shows an exploded perspective view of each component of the liquid crystal display module MDL. SHD is a frame-shaped shielding box (metal frame) made of metal plate. CLW is its display window. PNL is a liquid crystal display panel. SPB is a light diffusion plate. LCB is a light guide. PM is a reflecting plate. BL is a backlight fluorescent tube. L C A is the backlight box. Each component overlaps with the arrangement relationship shown in the figure to form a module M D L. The module MD L is fixed by the claws and hooks provided in the shielding box SHD. The shape of the backlight box LCA can be used to store the backlight fluorescent tube BL. The paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) (Please read the precautions on the back before filling this page). Order

-45-494261 A7 B7 _ V. Description of the invention (43) (Please read the precautions on the back before filling this page) The shape of the diffuser SPB, light guide LCB, and reflector PM will be set on the light guide LCB The light of the side-backlit fluorescent tube BL is converted into a uniform backlight on the display surface by the light guide LCB, the reflection plate RM, and the light diffusion plate SPB, and is projected out of the liquid crystal display panel PNL. The backlight fluorescent tube BL is connected to the inverter substrate P C B 3 and becomes the power source of the backlight fluorescent tube BL. According to the embodiment described above, by forming the pixel electrode to be transparent, the maximum transmittance during white display can be increased by about 30% (in this embodiment, 3 1 · 8%). Specifically, this embodiment can increase the transmittance from about 3.8% when an opaque pixel electrode is used to about 5.0% when a transparent pixel electrode is used. In addition, an I TO film for improving the reliability of the terminal can be formed at the same time, which can achieve both reliability and productivity.

[Embodiment 2] Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs This embodiment is the same as Embodiment 1 except for the following requirements. Figure 20 shows a plan view of a pixel. The hatched part in the figure shows the transparent conductive film g 2. [Pixel electrode PX] In this embodiment, the pixel electrode PX is composed of a source electrode SD 1, an sink electrode SD 2, and a second conductive film d 2 and a third conductive film (13 in the same layer. The pixel electrode P X and The source SD 1 is integrated. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ''---46 ~ 494261 A7 B7 V. Description of the invention (44) [Counter electrode CT] (please first Read the notes on the back side and fill in this page again.) In this embodiment, the counter electrode CT is composed of a transparent conductive film g 2. This transparent conductive film g 2 is the same as in Example 1 and is formed of transparent conductive film formed by sputtering. It is composed of a film (I TO), and its thickness is 100 to 2000 A (a thickness of about 1400 A in this embodiment). [Opposite Voltage Signal Line CL] The opposing voltage signal line CL is made of a transparent conductive film. It is composed of g 2 and is integrated with the counter electrode CT. [Gate terminal part]

In this embodiment, the surface of the Aj? Layer g1, which protects the gate electrode GTM, is formed in the same process as the counter electrode C T, and the transparent conductive film g2 which improves the reliability of connection with the T C P (Tape Carrier Package) is formed. Its structure is not different from the embodiment, and is the same as that shown in Figs. 7A and 7B. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Suction Terminal DT M] In this embodiment, the transparent conductive layer g 2 of the suction terminal DTM is the same as the gate electrode G TM and the same as the counter electrode CT. The transparent conductive film I TO formed in the process. In the structure, the relationship between the upper and lower layers is slightly different from that in the first embodiment (not shown). This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) -47-494261 A7 B7 V. Description of the invention (45) [Counter electrode terminal CTM] The conductive film g 1 of the counter electrode terminal C TM The transparent conductive layer g 2 uses the same transparent conductive film I TO that is formed in the same process as the counter electrode CT, as in the other terminals. Its structure is not different from that of the first embodiment, and is the same as that shown in Figs. 9A and 9B. [Manufacturing method] In this embodiment, a process F is inserted between the process B and the process C of the first embodiment. The sequence of the process is from Figure 12 to Figure 15. The sequence is A — B — F — C — D — E — G — Η. The mask pattern is a pattern of the scanning signal line GL, the scan electrode GT, and the transparent conductive layer g 2 of each terminal separated from the opposing voltage signal line CL, and the opposing voltage signal line C l are formed with the same mask. In this way, by forming the counter electrode transparent, the maximum transmittance can be increased by about 16% (15.9% in this embodiment), and the transmittance of the PNL of the liquid crystal display panel becomes about 4.4%. (Embodiment 3) This embodiment is the same as Embodiment 丨 except for the following requirements, and Embodiment 2 is the same. Figure 21 shows a plan view of the pixels. The oblique line in the figure indicates the transparent conductive film g 2. [Counter Electrode CT] In this embodiment, the counter electrode CT is made of transparent conductive film g2. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) " ^ 一 48 — (Please read first Note on the back, please fill out this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives to print 494261 A7 B7___ V. Invention Description (46) (Please read the note on the back before filling out this page). The transparent conductive film g 2 is composed of a transparent conductive film (I TO) formed by a sputtering method in the same manner as in Example 1. The thickness of the transparent conductive film g 2 is 100 to 200 OA (i400A in this embodiment). (Left and right) ° [Counter voltage signal line CL] The counter voltage signal line c L is made of a transparent conductive film g 2, and is formed integrally with the counter electrode CT. [Manufacturing method] In this embodiment, a process F is inserted between the process B and the process C of the first embodiment. The sequence of the processes is from A to B to F- ^ C to D to E to ^ F to ^ G to H. The mask pattern is a pattern formed by the scanning signal line GL, the scan electrode GT, and the counter voltage signal line CL by a separate mask. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in this embodiment, since the pixel electrode and the counter electrode are formed to be transparent, compared with Embodiment 1 and Embodiment 2, the maximum penetration during white display can be further improved. The rate is about 50% (47.7% in this embodiment), and the transmissivity of the PNL of the liquid crystal display panel is about 5.6%. (Embodiment 4) This embodiment is the same as Embodiment 1 and Embodiment 3 except for the following requirements. Figure 22 shows a plan view of the pixels. The oblique line in the figure is the transparent conductive film g 2. This paper size applies the Chinese national standard rCNS) A4 specification (210X297 mm) -49-494261 A7 B7 V. Description of the invention (47) [opposing voltage signal line c L] Opposing voltage signal line CL is made of conductive film g 1 Make up. In this embodiment, C r is used as the conductive film g 1. Furthermore, anodization is not performed to connect the counter voltage signal line C L and the counter electrode C T. A through-hole PH is formed on the gate insulating film G I. In addition to being formed of C r, the conductive film g 1 may be formed of Ta, Ti, Mo, W, A $ or an alloy thereof, or a clad structure in which the conductive film g 1 is laminated. [Manufacturing Method] In this embodiment, the process B of Embodiment 1 is reduced. In the process E, a perforation PΗ is formed, and in the process F, a pixel electrode PX and a counter electrode CT are simultaneously formed with the same mask. In this embodiment, in addition to the effects of Embodiments 1 and 3, the voltage can be smoothly transmitted between the opposing electrodes by reducing the resistance of the opposing voltage signal line CL, and by reducing the voltage. This reduces distortion and reduces crosstalk (horizontal stains) in the horizontal direction. Since the pixel electrode P X and the counter electrode CT are simultaneously formed with the same mask, the process F performed twice in Example 4 can be performed only once, and productivity can be improved. (Embodiment 5) This embodiment is the same as Embodiment 1 and Embodiment 4 except for the following requirements. Figure 23 shows a plan view of the pixels. The hatched portion in the figure represents the transparent conductive film g 2. This paper size applies to China National Standard (CNS) A4 specifications (210X 297 male (please read the precautions on the back before filling this page). Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs-50-494261 Printed by the consumer cooperative A7 B7 V. Description of the invention (48) [Counter electrode c T] In this embodiment, only the central counter electrode CT is made of transparent conductive film g 2. The counter electrode adjacent to the image signal line The metal film is formed integrally with the opposite signal line. In addition to the effects of the first embodiment and the fourth embodiment, the opposite electrode adjacent to the image signal line is made opaque, so it can be used. The crosstalk caused by the video signal is suppressed. The reason has been described in the above description. (Embodiment 6) The above embodiments 2 and 3 are the counter electrode CT and the counter electrode signal line CL are made of the transparent conductive layer g. Example of structure 2. At this time, this embodiment is an example in which the resistance value of the counter electrode signal line CL is greatly reduced by using the structure shown in Figures 2A to 4C. Figure 2A shows the second 0 Pair in picture A plan view of a part of the electrode signal line CL. Fig. 2 4B is a cross-sectional view taken along line b-b in Fig. 2 A. The difference between this figure and Fig. 20 is the counter electrode signal line CL system. It is composed of a two-layer structure, and an Aj? Layer 10 with a small resistance value is formed as its lower layer, and an I TO film 1 1 which completely covers the AP layer 10 is formed on the Aj layer 10. The counter electrode CT It consists of an extension that extends a part of the I TO film 11. In this way, the resistance of the counter electrode signal line CL can be reduced, and the paper size can be prevented from applying the Chinese National Standard (CNS) A4 specification (210X297 mm). (Please read the precautions on the back before filling this page) -51-494261 A7 B7 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (49) Caused by whisker-like protrusions that occur only on the A $ level The shortcoming is caused by the short-circuit between the interlayer insulating film and other conductive layers (such as the video signal line DL). That is, the above layer of AP layer 10 forms a whisker-like protrusion when forming the interlayer insulating film of the video signal line DL. The I TO film covering the AP layer can prevent the formation of the whisker-like protrusions. Figure 2 4C shows the counter electrode formed by the double-layer wiring. In this embodiment, the wiring of the I TO film 11 is coated on the wiring of the Aj? Layer 10, because the center line of the wiring is applied even between the electrodes. When the voltage is still low, even if opaque metal wiring is provided as in this embodiment, there is almost no reduction in aperture ratio. Because the counter electrode or pixel electrode has a double-layer wiring structure, it can be formed as a large one. The screen significantly reduces problems such as electrode disconnection. (Embodiment 7) [Active matrix liquid crystal display device] An embodiment in which the present invention is applied to an active matrix color liquid crystal display device will be described below. Components with the same functions in the figure are indicated by the same symbols, and will not be repeated. [Plane Structure of Matrix Section (Pixel Section)] Figures 25 are plan views of one pixel and its surroundings of an active matrix color liquid crystal display device of the present invention (the shaded part in the figure represents the transparent conductive film i 1). As shown in Figure 25, each pixel is arranged on the scanning signal line (gate (please read the precautions on the back before filling out this page). This paper size is applicable to the Chinese National Standard (CNS) A4 specification (2i × 297mm). (%) -52-494261 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention) 1 I signal line or horizontal signal line) GL, opposite voltage signal line (opposing electrode 1 1 I wiring) CL > 2 adjacent video signal lines (supplying signal line or vertical I 1 I straight signal line) in the intersection of DL (area surrounded by 4 signal lines-VI please within 1 I) 〇 Each pixel includes film Transistor TFT Cell Storage Capacitor Read 1 Read 1 CS tg I prj Pixel electrode PX and counter electrode CT 〇 Scan signal line back -V 1 1 GL Opposite voltage signal line CL extends to left and right in the figure and i 1 I have many bars in the up and down direction 〇 The image signal line DL extends to the ψ term in the up and down direction and then 1 1 I, and a number of pixel electrodes PX are arranged in the left and right directions. 1 Difficulty | the electric film i 1 is formed and passes through the source SD 1 and Thin-film transistor TFT Connecting page 1 1 Connection. The counter electrode CT is also formed of a transparent conductive film i 1 and is connected to the counter voltage signal line CL. The pixel electrode PX and the counter electrode CT are opposed to each other and each pixel is electrically charged. The electric field between the pole PX and the counter electrode CT controls the optical state of the liquid crystal LC Ί I and controls its display. The pixel electrode PX and the counter electrode CT become comb teeth 1 1 I shape and become slender toward the upper and lower directions in the figure. The number of counter electrodes CT (the number of comb teeth) and (the number of pixel electrodes PX (the number of comb teeth) P in 1 pixel) have a relationship of 1 to 0 + P + 1 (this embodiment 〇3 P = 2) 〇 The reason is that the counter electrode 1 CT must be adjacent to the video signal line DL in order to arrange the counter electrode 1 CT and the pixel electrode PX alternately. 〇The counter electrode 1 can be used in this way. ICT shields the power lines generated by the image signal line DL to prevent the electric field between the counter electrode 1 I pole CT and the pixel electrode PX from being affected by the electric field generated from the image signal line DL 1 1 I. Opposite voltage letter 1 Line CL, which will be described later, often supplies potential from the outside, so the potential becomes stable. Therefore, 1 1 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). 53_ 494261 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employee consumer cooperative A7 B7 V. Invention description (51) Even if it is adjacent to the image signal line DL, its potential does not change. In this way, the geometric position of the pixel electrode PX from the image signal line DL becomes farther, so the parasitic capacitance between the pixel electrode PX and the image signal line DL is greatly reduced, and the pixel electrode potential V s can be suppressed. The video signal voltage varies. In this way, crosstalk (bad image quality called vertical stain) that occurs in the vertical direction can be suppressed. The pixel widths of the pixel electrode P X and the counter electrode C T are 6 / zm, respectively. The reason is that it is formed to be sufficiently larger than the thickness of the liquid crystal layer to be described later, 3 · 9 // m, in order to apply a sufficient electric field to the entire liquid crystal layer in the thickness direction of the liquid crystal layer, and to be as small as possible in order to increase the porosity. In addition, in order to prevent disconnection, the electrode width of the video signal line D L is formed to be slightly wider than the pixel electrode PX and the counter electrode CT 8. At this time, the electrode width of the image signal line D L is formed to be less than twice the electrode width of the adjacent opposing electrode C T. If the electrode width of the image signal line D L has been determined according to the productivity of a good product, the electrode width of the counter electrode C T adjacent to the image signal line D L is formed to be more than a half of the electrode width of the image signal line D L. The reason is that power lines generated from the video signal line D L are absorbed by the opposing electrodes C T on both sides. In order to absorb power lines generated from a certain electrode width, it is necessary to have an electrode width that is equal to or greater than the width of the electrode. Therefore, as long as the opposing electrodes CT on both sides absorb the power lines generated from one and a half (every 4 Mm) of the electrodes of the image signal line DL, the electrode width of the opposing electrode CT adjacent to the image signal line DL is formed as More than half. In this way, crosstalk can be prevented from occurring due to the influence of the video signal, especially crosstalk in the vertical direction (vertical direction). This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Order -54-494261 A7 B7 Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Explanation (52) The scanning signal line GL sets the electrode width so as to meet the resistance value that can apply a sufficient scanning voltage to the gate electrode G of the terminal pixel (the opposite side of the scanning electrode terminal GTM described later). The opposite voltage signal line CL also sets the electrode width in order to meet the pixels that can be on the terminal side (the pixels that are farthest away from the common bus lines CB 1 and CB 2 described later, that is, the map between CB 1 and CB 2 Element), a sufficient resistance value is applied to the counter electrode Ct. The electrode interval between the pixel electrode P X and the counter electrode C T changes according to the liquid crystal material used. The reason is that the electric field strength that achieves the maximum transmittance varies with the liquid crystal material, so the electrode interval is set in accordance with the liquid crystal material so that the maximum amplitude of the signal voltage is set by the withstand voltage of the video signal driving circuit (signal driver) used. The maximum penetration is produced within the range. If a liquid crystal material described later is used, the electrode interval becomes 16 6 m. [Sectional Structure of Matrix Section (Pixel Section)] Figure 26 is a sectional view taken along line 6-6 in Figure 25. Fig. 27 is a sectional view of the thin film transistor TF D along line 7-7 in Fig. 25. Fig. 28 is a sectional view of the storage capacitor C s t g along line 8-8 in Fig. 25. As shown in Figures 26 to 28, a thin film transistor TFT, a storage capacitor Ss tg, and an electrode group are formed on the lower transparent glass substrate SUB 1 side with the liquid crystal layer LC as a reference, and a color filter is formed on the upper transparent glass substrate SUB 2 side Light device FIL, black matrix pattern BM for shading. Inside each of the transparent glass substrates S U B 1 and S U B 2 (Liquid crystal (please read the precautions on the back before filling this page) Γ, τ

This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) -55-494261 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (53) LC side) The initial stage is equipped with liquid crystal control The alignment films OR I and RI 2 of the alignment are provided on each outer surface of the transparent glass substrates SUB1 and SUB2 with polarizers whose polarizing axes intersect each other perpendicularly and are aligned. [T F T substrate] First, the structure of the lower transparent glass substrate S U B 1 side (T F T substrate) will be described in detail. [Thin Film Transistor T F T] After a thin film transistor TFT applies a positive bias to its gate GT, the normal resistance between the source and the sink decreases. If the bias is zero, the channel resistance increases. As shown in FIG. 27, the thin film transistor TFT includes a gate GT, an insulating film GI, and an i-type semiconductor layer AS composed of i-type (true, instrinsic, undoped conductive type to determine impurities) amorphous silicon, A pair of source SD1 and sink SD2. The source and the sink are originally determined by the bias polarity between them. In the circuit of the liquid crystal display device, the polarity is reversed during the operation, so the source and the sink are replaced during the operation. However, for convenience of explanation, in the following description, one side is fixed as the source and the other is fixed as the source. [Gate G T] The gate G T and the scanning signal line G L become continuous, and a part of the scanning signal line G L becomes a gate GT. Gate GT exceeds the standard of thin-film electrical paper. Applicable to China National Standard (CNS) A4 specification (210X297 mm) ~~ 56-(Please read the precautions on the back before filling this page) • ^^ 1 494261 A7 B7 5 2. Description of the invention (54) Part of the active field of crystalline TFT. In this example, the gate G T is formed of a single-layered conductive film g 3. The conductive film g 3 is, for example, a C r -Mo alloy film formed by a sputtering method, but the present invention is not limited thereto. [Scanning Signal Line G L] The scanning signal line G L is formed of a conductive film g 3. The conductive film g 3 of the scanning signal line G L is formed in the same process as the conductive film g 3 of the gate GT, and is integrally formed. The scan signal line G L is used to supply the gate voltage V g from an external circuit to the gate GT. In this embodiment, the conductive film g 3 is, for example, a C r -Mo alloy film formed by a radiographic method. The scanning signal line GL and the gate GT are not limited to the Cr-Mo alloy, and may also be coated with Cr-Mo aluminum or a double-layer structure of aluminum alloy in order to reduce the resistance. The portion that intersects the image signal line D L is formed to be small or double-forked in order to reduce the probability of a short circuit with the image signal line D L so that laser trimming can be used to cut off even when a short circuit occurs. [Opposite Voltage Signal Line C L] The opposing voltage signal line C L is composed of a conductive film g 3. The conductive film g 3 of the counter voltage signal line C L is formed in the same process as the gate electrode GT, the scanning signal line G L, and the conductive film g 3 of the counter electrode CT, and can be connected to the counter electrode CT. Due to the counter voltage signal line C 1, the counter voltage V com can be supplied to the counter electrode CT from an external circuit. The counter voltage signal line CL is not limited to being made of cr-Mo alloy, and can also be coated with Cr-Mo aluminum or aluminum alloy in order to reduce the resistance. The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 (Mm) (Please read the notes on the back before filling out this page),-Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Finance and Economics -57-494261 A7 B7 V. Description of the invention (55) Double-layer structure. The part that intersects the image signal line DL can also be formed to be small in order to reduce the probability of a short circuit with the image signal line DL, or it can be formed into a double fork, so that when the short circuit occurs, the entire laser can still be used. Cut off. [Insulating film G I] The insulating film G I is used as a gate insulating film for supplying an electric field to the gate G T and the semiconductor layer AS in a thin film transistor TF T. The insulating film GI is formed on the gate GT and the scanning signal line GL. The insulating film G I is a silicon nitride film formed by, for example, a plasma C V D method, and has a film thickness of 2500 to 4500 A (in this embodiment, 3500 A). The insulating film GI also functions as an interlayer insulating film of the scanning signal line GL and the opposing voltage signal line C L and the image signal line D L, and also constitutes its insulating film. The insulating film G I is patterned using the same optical mask as the protective film P SV 1 described later, and is manufactured in a batch. [I-type semiconductor layer A S] The i-type semiconductor layer A S is formed of amorphous silicon to a thickness of 200 to 2500 A (1200 A in this embodiment). The d0 layer is an N (+)-type amorphous silicon semiconductor layer doped with phosphorus (P) for ohmic contact. The i-type semiconductor layer AS is located on the lower side, and only the conductive layer d 3 remains on the upper side. The i-type semiconductor layers AS and d 0 layers are also provided on both the scanning signal line GL and the intersection of the opposing voltage signal line CL and the image signal line DL. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 Mm) 58-(Please read the notes on the back before filling this page)

I Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs 'employee consumer cooperative 494261 A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs' employee consumer cooperative. V. Invention description (56) 1 1 〇 The i-type semiconductor layer AS at the intersection can reduce the scanning signal line GL 1 Short circuit between I and counter voltage signal line CL and video signal OjL · · line DL 〇 1 1 Please 1 IC source SD 1 sink SD 2] No read 1 read- | K 1 1 source SD 1 sink SD 2 Consists of a conductive film d 3 in contact with the N (+) -type semiconducting back surface 1 I 1 I body layer d 0. Note 1 1 Matter 1 I The conductive film d 3 is C r — Μ formed by sputtering. 0 alloy item and then 1 1 fill 1 film with a thickness of 5 0 0 3 0 0 0 A (in this example, the book m page 1 2 5 0 0 A) 〇 Because C r — Μ 0 of the film The stress is small, so it can be formed. A thicker film is effective to reduce the resistance of the wiring. The adhesion between the C r -M 0 film and the N 1 I (+) -type semiconductor layer d 0 is also good. The conductive film d 3 is used in addition to « In addition to the Cr-M0 film for IJ, other local melting point metals (M0 order T i T a > W) film ί high melting point metal silicide (M 0 S i 〇 2 Ί 1 T i S i 2, T a S i ^ 2 WS i 2 film can also be formed as a layered structure with aluminum II, etc. ▲ After masking the pattern of the conductive film d 3 > with the conductive film d 3 as a mask The% 1 cover removes the N (+) -type semiconductor layer d 0 0, that is, the N (+) -type semiconductor layer d 0 remaining on the i-type semiconductor 1 1 bulk layer AS except the conductive film d 1 1 1 and the conductive film d 2 Parts are removed in white alignment. At this time, the thickness of the y N (1 +) -type semiconductor layer d 0 is all etched, so some surface portions of the i-type semiconductor layer 1 IAS are also The degree of etching can be controlled by 1 time during etching. 0 1 1 1 1 C Video signal line DL】 1 1 1 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm)-59-6 42 49 A7 B7 V. Description of the invention (57) (Please read the precautions on the back before filling this page) The image signal line DL is composed of the conductive film d 3 on the same layer as the source SD1 and the sink SD2. The image signal line D L is integrated with the suction electrode S D 2. In this embodiment, the conductive film 43 is a Cr-Mo alloy film formed by a sputtering method, and has a thickness of 500 to 3000 A (about 2500 A in this embodiment). Because the stress of the Cr-Mo film is small, a thicker film thickness can be formed, which is beneficial for reducing the resistance of the wiring. The adhesion between the c r -Mo film and the N (ten) type semiconductor layer do is also good. In addition to the Cr-Mo film, the conductive film d 3 can also be a high-melting-point metal (Mo, Ti, Ta, W) film, and a high-melting-point metal silicide (

Mo S i2, Ti S i2, Ta S i2, WS i2) films may be formed in a laminated structure with aluminum or the like. [Storage capacitor C s t g] The conductive film d 3 overlaps the opposing voltage signal line C L at the source SD 2 portion of the thin film transistor TFT. As shown in Fig. 28, the superposition constitutes a storage capacitor (electrostatic capacitor element) with the source SD2 (d3) as an electrode and the opposite voltage signal CL as the other electrode. The employee ’s intellectual property bureau consumes Cooperative printed C stg. The dielectric film of the storage capacitor C s t g is composed of an insulating film G I used as a gate insulating film of a thin film transistor T F T. As shown in FIG. 25, on a plane, the storage capacitor Cstg is formed on a part of the opposing voltage signal line CL. [Protective Film P S V 1] A protective film PSV1 is provided on the thin film transistor TFT. Protective film The size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm 1 '' -60-494261 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (58) PSV 1 is mainly for protection The thin film transistor TFT is provided to protect it from moisture. Use a protective film with high transparency and excellent moisture resistance. The protective film P SV 1 is made of, for example, a silicon oxide film and a silicon nitride film formed by a plasma CVD device. Its thickness is about 0.3 to lvm. Part of the protective film PSV 1 is removed to expose the external connection terminals DTM and GTM. The thickness relationship between the protective film PSV1 and the insulating film GI is that the former is formed by considering its protective effect For thicker ones, it is necessary to make the transconductance gm of the transistor thinner. The protective film PSV 1 is patterned with the same optical mask as the insulating film GI and processed in a batch. The through voltage signal line CL is connected to a counter electrode CT described later, and the source SD2 is connected to the pixel electrode PX to provide through holes TH2 and TH2. Because the through hole TH2, the protective film PSV1 and the insulating film GI are integrated. Batch plus Therefore, holes with a depth of up to g 3 layers can be formed, and in the perforation T1, because of d 3 blocking, holes with a depth of up to d 3 layers can be formed. [Pixel electrode PX] The pixel electrode PX is made of a transparent conductive layer i1 is formed. The transparent conductive film i 1 is composed of a transparent conductive film (IT 0) formed by sputtering, and has a thickness of 100 to 2000 A (about 1400 A in this embodiment). The pixel electrode PX is perforated through TH1 Connected to the source SD 2. In this embodiment, the pixel electrode is transparent. Therefore, the light that penetrates this part increases the maximum transmittance when displaying in white. Therefore, please contact with the pixel (please read the precautions on the back first) (Fill in this page again) The size of the paper used for this edition is in accordance with the Chinese National Standard (CNS) A4 (210X297 mm) ~ 61-494261 A7 B7. 5. Description of the invention (59) Compared with extremely opaque, a brighter display is possible. At this time As described later, when the polarizing plate is configured without voltage applied, the liquid crystal molecules maintain an initial alignment state, and a black display state is made in this state (making it a normal black mode), so even if the pixel electrode is Transparent, light It will not pass through this part, and it can display good quality black. In this way, the maximum transmittance can be improved and sufficient contrast can be achieved. [Counter electrode c T] The counter electrode CT is formed of a transparent conductive layer i1. The transparent conductive film i 1 is composed of a transparent conductive film (IT 0) formed by sputtering, and has a thickness of 10 0 to 2 0 0 0A (a thickness of 1 400 A in this embodiment). The electrode CT is connected to the opposing voltage signal line CL via the through hole TH2. A counter voltage Vc om is applied to the counter electrode CT. In this embodiment, the counter voltage V c ◦ m is set at a driving voltage V dm i η lower than the minimum level applied to the image signal line DL and equal to the intermediate DC potential of the maximum level driving voltage V dm a X The potential of the field-on voltage ΔVS generated when the thin-film transistor element TF VT is turned off. If it is necessary to reduce the power of the integrated circuit used in the image signal driving circuit to about half, it is only necessary to apply an AC voltage. [Color filter substrate] The structure of the upper transparent glass substrate SUB 2 side (color filter substrate) will be described in detail below with reference to FIGS. 25 and 26. ^ The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 62-(Please read the notes on the back before filling this page) Order printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 494261 A7 __B7 V. Invention Explanation (60) [Light-shielding film BM] A light-shielding film BM (so-called black matrix) is formed on the upper transparent glass substrate SU Β 2 side to prevent penetration of unnecessary gaps (pixel electrode Pix and counter electrode) The penetrating light from the gaps other than the CTs is emitted to the display surface to reduce the contrast. The light-shielding film BM has the function of preventing external light or backlight from entering the i-type half-body guide layer A S. That is, the i-type semiconductor layer AS of the thin film transistor TF is held by the light-shielding film BM located on the upper and lower sides and the larger gate G T, and neither the external natural light nor the backlight can be illuminated. The light-shielding film BM shown in FIG. 25 is a structure in which a thin film transistor element T F T extends in a linear shape toward the left and right directions. This pattern is only an example, and it may be formed in a matrix shape with openings in a hole shape. The direction of the electric field at the end of the comb electrode becomes chaotic. The display of this part corresponds to the image information in the pixels in a 1: 1 state, and becomes black when black, and white when white, so it can be done. Use for part of the display. The gap between the counter electrode C T and the video signal line D L in the upper and lower directions in the figure is shielded by a light shielding layer SH formed in the same process as the gate GT. Therefore, the shading in the left-right direction and the up-down direction can use the extremely accurate shading of the alignment accuracy in the TFT process. Therefore, the boundary of the light-shielding layer S Η can be set between the electrodes adjacent to the opposing electrode CT of the image signal line DL. The light-shielding film BM, which relies on the alignment accuracy of the upper and lower substrates, can further expand the opening. The light-shielding film BM has a light-shielding property and is formed of an insulating film having a high insulation property to prevent an influence on an electric field between the pixel electrode px and the counter electrode C T. In this example, a black pigment is mixed in a resist material to form the paper. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page) Order the intellectual property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives -63-494261 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _____ B7 V. Description of the Invention (6l) Approximately 1 · 2 // m thickness. The light-shielding film BM is formed on the pixels of each line in a line shape facing the left and right directions, and the effective display area β of each line is divided by the line. Therefore, the light-shielding film BM can make the outline of the pixels of each line extremely clear. That is, the light-shielding film BM has two functions b to shield the black matrix and the i-type semiconductor layer AS. The light-shielding film BM is formed into a frame shape at the peripheral portion, and its pattern is continuous with that of the matrix portion shown in FIG. 26. The light-shielding film BM in the peripheral portion extends beyond the closed portion s L to prevent leakage light such as reflected light from a personal computer or the like from entering the matrix portion, and prevent leakage of the backlight or the like from outside the display area. On the other hand, the light-shielding film BM is formed to be within about 0.3 mm to 1 mm from the edge of the substrate SUB2, and is formed while avoiding the cutting area of the substrate S U B 2. [Color filter F I L] The same as in the first embodiment. [External Coating Film 0 C] The same as in Example 1. [Liquid crystal layer, alignment film, and polarizing plate] The same as in Example 1. [Structure around the matrix] This paper size applies Chinese National Standard (CNS) A4 specification (210X29 * 7mm) ~ 'one one 64 one (Please read the precautions on the back before filling this page)

494261 A7 B7____ 5. Description of the Invention (M) Same as Example 1. (Please read the precautions on the back before filling in this page) [Gate terminal section] Figure 29 is a plan view showing the connection structure from the scanning signal line G L of the display matrix to its external connection terminal G TM. Fig. 29B is a sectional view taken along line B-B in Fig. 29A. This figure corresponds to the vicinity of the center of Figure 5. The diagonally-lined portions are shown as straight lines for convenience. For easy understanding, the C r -Mo layer g 3 in the figure is indicated by oblique lines. The gate terminal GTM is composed of C r-Mo layer g 3 and protects its surface, and it can improve the connection reliability of TCP (Tape Carrier Package). It is made of transparent conductive layer i1. The transparent conductive layer i1 is printed with a transparent conductive film IT OO formed in the same process as the pixel electrode PX. The printed plan of the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the insulating film GI and the protective film P SV 1 in a relatively flat shape. The boundary line is further to the right, and the terminal portion G TM at the left end is exposed from the film for connection with an external circuit. In the figure, only a pair of gate lines GL and gate terminals are shown. In fact, as shown in FIG. 29, a plurality of such pairs of gate lines and gate terminals are arranged in the upper and lower positions to form a terminal group. Tg (figure 5), the left end of the gate electrode is extended across the cutting area of the substrate during the manufacturing process and is shorted by the wiring SG g (not shown), and can prevent the alignment film OR I 1 from being polished during the manufacturing process Electrostatic damage occurred. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm y -65-6 42 49. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (63) [Sucking terminal DT Μ] Section Fig. 3 〇 A shows a plan view of the connection state from the image signal line DL to its external connection part D TM. Fig. 3 〇 B shows a sectional view along line B-B in Fig. 3 A. This figure corresponds to Near the upper right of Figure 5, for the convenience of changing the direction in the figure, the direction of the right end is equivalent to the upper end of the substrate SUB 1. TST d is the inspection terminal. The external circuit is not connected to this terminal, but its width is larger than the wiring section. In order to contact the probe, etc. Similarly, the width of the suction terminal D TM is larger than that of the wiring part so as to be connected to an external circuit. The external connection suction terminal D TM is arranged in the up-down direction, and the suction terminal D D M is as described above. The terminal group Td shown in Fig. 5 extends beyond the cutting line of the substrate SUB 1. In the manufacturing process, in order to prevent static damage, all of them are shorted through the wiring SHd (not shown). As shown in Fig. 8, check The terminal TST d is formed at The image signal line DL is separated from each other. The suction terminal DTM is formed by a transparent conductive layer i1, and the portion where the protective film PSV1 is removed is connected to the image signal line DL. The transparent conductive film i 1 is the same as the gate terminal GTM. The transparent conductive film IT0 formed in the same process as the pixel electrode PX is used. The lead-out wiring from the matrix portion to the suction terminal portion D Tm is composed of a layer d 3 at the same level as the image signal line DL. Counter electrode terminal CTM] Figure 3 1A is a plan view of the connection from the counter voltage signal line CL to its external connection terminal CTM. Figure 31B is the edge in Figure 31A (please read the precautions on the back before filling in this (Page) This paper size is in accordance with Chinese National Standard (CNS) A4 (210X297 mm) 66_494261 A7 B7 V. Description of the invention (64) Sectional drawing of line B-B. This figure corresponds to the upper left of Figure 5. Each counter voltage signal line CL is led out in a batch to the common electrode terminal C TM at the common bus line CB. The common bus CB is a conductive layer 3 laminated on the conductive layer S3 and a transparent conductive layer i 1 connection. The counter voltage can be sufficiently supplied from the external circuit to each counter voltage signal line CL. According to this structure, the resistance of the common bus bar can be reduced without separately providing a conductive layer. The counter electrode terminal CTM is on the conductive layer g 3 is formed by laminating a transparent conductive layer i1. The transparent conductive film i1 is the same as that used at the other end, and the transparent conductive film I TO formed in the same process as the pixel electrode PX is used. In order to protect the surface with the transparent conductive layer i 1 It also prevents corrosion and covers the conductive layer g 3 with a durable transparent conductive layer i 1. The transparent conductive layer i1, the conductive layer g3, and the conductive layer d3 are connected by perforations formed on the protective film PSV1 and the insulating film GI. Fig. 3 2A is a plan view of the connection state from the other end of the opposing voltage signal line C L to its external connection terminal C TM2. Figure 3 2 B is a sectional view taken along line B-B in Figure 3 2A. This figure corresponds to the vicinity of the upper right of Figure 5. The common bus line C B 2 is led to the opposite terminal CTM2 at the other end of the opposite voltage signal line C L (gate terminal CTM side). The difference from the common bus line CB1 is that it is formed with a conductive layer d3 and a transparent conductive layer i1 so as to be insulated from the scanning signal line GL. It is insulated from the scanning signal line GL by an insulating film GI. [Equivalent circuits of all display devices] This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page), τ Printed by the Intellectual Property Bureau Employees Consumer Cooperatives System -67-494261 A7 B7 V. Description of the Invention (65) (Please read the precautions on the back before filling out this page) Figure 3 3 shows the stomach diagram of the equivalent circuit of the display matrix and its peripheral circuits. The diagram is a circuit diagram, but it actually corresponds to the geometric configuration table $ ° A R is a matrix array in which many pixels are arranged in a quadratic element shape. In the figure, X indicates that the image signal lines DL, G, B, and R correspond to green, blue, and red pixels, respectively. Y is the scanning signal line GL, 1,2, 3 ... e n d is added in accordance with the scanning timing. The scanning signal line Y is connected to the vertical scanning circuit V, and the image signal line X is connected to the image signal driving circuit Η. SU P is a power supply circuit that includes a number of voltage sources that are stabilized by generating a divided voltage from one voltage source, and that converts information for CRT (cathode ray tube) generated by a main device (high-level arithmetic processing device) into a TFT liquid crystal display device. Circuit of information. [Driving method] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Fig. 34 shows the driving waveforms of the liquid crystal display device of this embodiment. The opposing voltage V c is a certain voltage. The scanning signal Vg becomes the ON level during each scanning period, and becomes the OFF level during other scanning periods. The image signal voltage is transmitted to one pixel by inverting the positive electrode and the negative electrode every frame with an amplitude twice the voltage to be applied to the liquid crystal layer. At this time, the video signal voltage V d reverses the polarity in each column and reverses the polarity in each row. In this way, pixels with reversed polarities become adjacent to each other up and down, making flicker and crosstalk (stains) less likely to occur. The counter voltage Vc is set to a voltage lowered by a certain amount from the central voltage in which the polarity of the video signal voltage is reversed. In this way, the field-on voltage generated when the thin-film transistor element is turned from on to off can be corrected. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) " ~~ 68-494261 A7 B7 V. Description of the invention ( 66) is implemented in order to apply an AC voltage with a small DC component to the liquid crystal. The reason is that after DC is applied to the liquid crystal, the afterimage and deterioration are more serious. In addition, by alternating the counter voltage, the maximum amplitude of the video signal voltage can be reduced, and a video signal drive circuit (signal driver) with a low withstand voltage can be used. [Function of Storage Capacitor C s t g] The same as in the first embodiment. [Manufacturing method] The manufacturing method of the substrate SUB 1 side of the liquid crystal display device will be described below with reference to Figs. 3 5 to 37. In the figure, the text in the center is the abbreviation of the process, the left side is the thin film transistor T F T part shown in Figure 27, and the right side is the processing flow of the shape of the section near the gate terminal shown in Figure 29. Except for processes B and D, processes A to I are those corresponding to each photographic process. Each cross-sectional view of each process indicates that the processing after the photographic processing has been completed and the photoresist is removed. The term "photographic treatment" refers to a series of operations in the present invention from the application of a light-resistant agent to selective development through masking to development, and will not be repeated. The following describes the process according to the distinction. Process A, FIG. 3-5 A conductive film g made of C r -M0 with a film thickness of 2 0 0 0A is formed on the lower transparent glass substrate SUB 1 made of AN6 3 5 glass (trade name) by sputtering. 3. After photographic processing, the paper size of this paper applies Chinese National Standard (CNS) A4 specifications (210X297 mm) (please read the precautions on the back before filling this page), τ Γ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ~ 69-494261 A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (67) The acid 2nd amine selectively etches the conductive film g3. In this way, the first conductive layer connected to the gate GT, the scanning signal line GL, the counter voltage signal line CL, the gate terminal GTM, the common bus line CB 1 and the first conductive layer of the counter electrode terminal CTM1, and the gate terminal are formed. The busbar SH g (not shown) of the sub-GTM. Process B 'Fig. 3 5 Introducing ammonia gas, silane gas, and nitrogen gas into the plasma CVD device to form a silicon nitride film with a thickness of 3 5 0 0A, and introducing silane gas into the plasma CVD device to form a hydrogen film. After an i-type amorphous Si film having a thickness of 120 Å, a hydrogen gas and a phosphine gas were introduced into a plasma CVD apparatus to form an N (+)-type amorphous silicon film having a thickness of 300 A. Process C, Figures 3 and 5 After photographic processing, SF β and CCP 4 are used as dry etching gases to selectively etch N (+) -type amorphous Si films and i-type amorphous silicon films to form islands. i-type semiconductor layer AS. Process D, FIG. 36 A conductive film d 3 made of C r with a film thickness of 3 0 0A is formed by a sputtering method. After photographic processing, the conductive film d3 is etched with the same solution as in process A to form the first conductive layer of the image signal line DL, the source SD1, the sink SD2, the common bus bar CB2, and the sink terminal DTM shorted bus bar SHd (not shown). Then, apply the Chinese National Standard (CNS) A4 specification (210X297 mm) to the paper size of the dry-type paper (please read the precautions on the back before filling out this page) —-Book 1 70-Printed by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs 494261 A7 __B7 V. Description of the invention (68) Introducing ccp4, SF6 into the etching device, and etching the N (+) type amorphous sand film to selectively remove the N (+) type semiconductor layer d between the source and the sink. 〇 Process E, Fig. 36. Ammonia gas, silane gas, and nitrogen gas are introduced into the plasma CVD apparatus to form a silicon nitride film having a film thickness of 0 · 4 // m. After photographic processing, S F 6 was used as a dry etching gas to selectively etch silicon nitride to form a pattern of a protective film PSV1 and an insulating film GI. Process F, Fig. 37. A transparent conductive film i 1 composed of an I TO film having a film thickness of 1 4 0 0 A is formed by a sputtering method. After photographic treatment, the transparent conductive film i 1 is selectively etched by using a mixed acid solution of hydrochloric acid and nitric acid as an etching solution to form the uppermost layer of the gate electrode G T M, the suction electrode D TM and the counter electrode terminal CTM1 and The second conductive layer of CTM2. [Display Panel PNL and Drive Circuit Board PCB 1] The same as in the first embodiment. [TCP connection structure] The same as in the first embodiment. 〔Drive circuit board PCB2〕 i Paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

-71-494261 A7 B7 V. Description of Invention (69) Same as the first embodiment. (Please read the precautions on the back before filling in this page) [All the structure of the liquid crystal display module] The same as the first embodiment. As described above, in this embodiment, since the comb-shaped electrode is formed as transparent as in Embodiment 3, the maximum transmittance during white display can be increased by about 50%, and the PNL of the liquid crystal display panel can be penetrated. The rate becomes approximately 5.7%. In addition, an I TO film that can improve the reliability of the terminal can be formed at the same time, which can simultaneously produce reliability and productivity. This embodiment is different from Embodiments 1 to 6, because the process of forming I TO on the protective film PSV is used, so the counter electrode can be set at the uppermost layer, and the shielding efficiency of the leakage electric field of the image signal line is also high. Reduce crosstalk. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, because there is no protective film p SV in the power line path of the liquid crystal between the driving electrodes, the voltage will not decrease in the protective film p SV, and the maximum driving voltage value for driving the liquid crystal can be changed from implementation. The 7 · 5V of Example 1 was reduced to 5.0 · V of this embodiment. This method uses an electric field parallel to the substrate surface to drive the liquid crystal. Since there are two protective films in the power line path between the electrodes, the process can be simplified and productivity can be improved. (Embodiment 8) Except for the following requirements, this embodiment is the same as the embodiment 7. The paper size is the same as the Chinese National Standard (CNS) A4 specification (210X297 mm) -72-494261 Printed by the Intellectual Property Bureau Staff Consumer Cooperatives System A7 B7 V. Description of Invention (7G). Figure 38 is not a plan view. The hatched portion in the figure indicates the transparent conductive film i 1. [Pixel Electrode P X] In this embodiment, the pixel electrode PX is composed of a conductive film d 3 on the same layer as the source SD 1 and the sink SD 2. The pixel electrode PX is integrated with the source S D 1. In this embodiment, in addition to having the same effects as in Embodiment 1, although the transmittance is slightly affected, it is possible to avoid poor contact between the pattern electrode P X and the source s D 1. Since one of the electrodes is covered with an insulating film (protective film P S V 1), the possibility of a direct current passing through the liquid crystal is reduced when an alignment film defect occurs, and liquid crystal degradation does not occur, which improves reliability. (Embodiment 9) This embodiment is the same as Embodiment 7 except for the following requirements. Figures 3 to 9 show plan views of the pixels. The oblique line in the figure indicates the transparent conductive film i 1 〇 [counter electrode C D] In this embodiment, the counter electrode C T and the counter voltage signal line C L are integrated with the conductive film g 3. In this embodiment, in addition to the effects as in the first embodiment, although the transmittance is slightly affected, the poor contact between the counter electrode C T and the counter voltage signal line C L can be avoided. Because one of the electrodes is covered by an insulating film ((Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210X29 * 7 mm) -73-494261 A7 B7 V. Description of the invention (71) The protective film PSV 1) is covered, so the possibility of direct current passing through the liquid crystal when the alignment film defect occurs is reduced, the liquid crystal is not deteriorated, and the reliability can be improved. (Please read the precautions on the back before filling in this page) (Embodiment 10) This embodiment is the same as Embodiment 7 except for the following requirements. Figure 40 shows a plan view of the pixels. The hatched part in the figure indicates the transparent conductive film i 1. [Light-shielding film BM] A light-shielding film BM (also a black matrix) is formed on the upper transparent glass substrate SUB 2 side to prevent penetration of unnecessary gaps (the gaps between the pixel electrode PX and the counter electrode CT). Light is emitted to the display surface to reduce contrast. The light-shielding film BM also has a function of preventing external light and the backlight from entering the i-type semiconductor layer AS. That is, the thin-film transistor T F T's i-type semiconductor layer A S is held by a light-shielding film BM and a larger gate G D which are located above and below, so that the external natural light and backlight will not be illuminated. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The light-shielding film BM shown in Fig. 40 extends from the top of the thin-film transistor TF T element in the vertical, horizontal, and leftward direction. The display of the electric field in the direction of the comb electrode is chaotic, which corresponds to the image information in the pixel on a one-to-one basis, and becomes black when it is black and white when it is white, so it can be used as part of the display. This embodiment is different from Embodiment 7 in that the light-shielding film BM has a light-shielding property and is formed of a highly conductive film to prevent an electric field generated from the image signal line D L from affecting the electric field between the pixel electrode P X and the counter electrode C T. In this implementation, the paper size applies to the Chinese National Standard (CNS) A4 (210X297 mm) -74-494261 Α7 Β7 V. Description of the invention (72) (Please read the precautions on the back before filling this page) For example, from A three-layer structure of chromium oxide (CrOx), chromium nitride (CrNx), and chromium (C r) is formed on the substrate SUB 1 surface to a thickness of about 0.2 mm // m. In this case, chromium oxide is used to suppress reflection on the display surface. Chromium is provided on the uppermost layer of the light-shielding layer BM to supply a voltage to the light-shielding film BM from the outside. The light-shielding film BM is formed on the pixels of each row in a line shape toward the left and right directions', and the effective 7K area is divided by the line. Therefore, the light-shielding film BM makes the outline of the pixels in each row more clear. That is, the light-shielding film BM has two functions, such as shielding the black matrix and the i-type semiconductor layer AS. The light-shielding film BM is formed into a picture frame shape at the peripheral portion, and its pattern is continuous with that of the matrix portion shown in FIG. 25. The light shielding film BM at the peripheral portion extends beyond the closed portion SL to prevent leakage light such as reflected light from a personal computer or the like from entering the matrix portion, and prevent light such as backlight from leaking out of the display area. On the other hand, the light-shielding film BM is formed only to the inside of about 0.3 to 1.0 from the edge of the substrate SUB2, and is formed so as to avoid the cutting area of the substrate SUB2. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs [External Coating Film 0 C] The same as in Example 1. However, a perforation may be formed to supply a potential to the light-shielding film BM. The potential is preferably connected to the counter voltage V c. In this embodiment, in addition to the effect of Embodiment 7, and because the light shielding film BM can shield the influence of the electric field generated from the image signal line DL, the electric field of the pixel electrode P X and the counter electrode C T will not be affected. influences. Therefore, crosstalk does not occur with the image signal line DL, and the paper size on the screen can be eliminated according to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) ~ 75-494261 A7 __ B7 V. Description of the invention (73) Poor quality (smear) with straight lines. In addition, the area where the transparent counter electrodes C T provided on both sides of the image signal line D L are shielded by the light-shielding layer S Η is also reduced, and a higher transmittance can be achieved. (Embodiment 1 1) Figures 4 and 3 are principle diagrams of improving the aperture ratio of an active matrix color liquid crystal display device of this embodiment. Figure 4 3A is a graph showing the potential distribution characteristics of the liquid crystal display layer when a voltage is applied to the electrodes. Figure 4 3B is a plan view of the realignment state of liquid crystal molecules near the central portion of the liquid crystal layer. Figure 4 3C is a characteristic diagram of the rotation angle α of the liquid crystal molecules shown in Figure 4 3B. Fig. 4 3D is an example of a characteristic diagram of the light transmittance distribution of light passing through the upper and lower polarizing plates, the upper and lower substrates, the liquid crystal layer on the electrodes and between the electrodes. This embodiment is the same as Embodiment 7 except for the following requirements. In this embodiment, the torsional elasticity coefficient K 2 of the liquid crystal layer is about 2 X 1 0 -12 N. If the torsional modulus of elasticity K 2 uses a large value, for example, about 1 0 X 1 0-12N, as shown in FIG. 4B, the rotation angle α of the liquid crystal molecules at the center of the electrode is almost equal to 0. Therefore, the electrode The transmittance of the upper central portion is roughly the value of the dark display. In this embodiment, even the liquid crystal molecules at the central part of the electrodes are also rotated, and the average transmittance of the transmittance of the A part between the electrodes is more than 50%, which becomes the mean transmittance of the B part on the electrode. rate. Therefore, the entire average transmittance becomes the average transmittance of the transmittance of the A + B portion, which can be greatly improved. I Paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) ~ -76-(Please read the precautions on the back before filling out this page) Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives 494261 Intellectual Property of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau A7 B7 V. Description of the Invention (74) The invention can be applied to liquid crystal and the like as described above, and has practicality in the liquid crystal manufacturing industry. ρ. FIG. 1 is a plan view of a pixel of a liquid crystal display portion of an active matrix color liquid crystal display device and its surroundings in Embodiment 1 of the present invention; FIG. 2 is a view taken along line 3-3 in FIG. 1 Sectional view of the element; Figure 3 is a sectional view of the thin film transistor TFT along line 4-4 in Figure 1; Figure 4 is a breakdown of the storage capacitor C stg along line 5-5 in Figure 1 Figure 5 is a plan view for explaining the structure of the matrix peripheral portion of the display panel; Figure 6 is a sectional view of the edge portion of the panel without scanning signal terminals on the left and external connection terminals on the right; Figure 7 A is A plan view near the connection part of the gate terminal G TM and the gate wiring GL, FIG. 7B is a sectional view; FIG. 8 A is a plan view near the connection part of the suction terminal D TM and the image signal line DL. Fig. 8B is a cross-sectional view; Fig. 9A is a plan view near the connection part of the common electrode terminal CTM, the common bus line CB, and the common voltage signal line CL, and Fig. 9B is a cross-sectional view thereof; The figure shows an active matrix color liquid crystal display device of the present invention including a matrix portion and a peripheral portion. Road map; ^ Paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) " " ~ -77-(Please read the notes on the back before filling this page) 494261 A7 B7 V. Description of the invention ( 5) Stomach 11 is the driving waveform of the active matrix color liquid crystal display device of the present invention; (Please read the precautions on the back before filling this page) Figure 12 shows the process A on the substrate SUB 1 side ~ The flow chart of the cross section of the element and gate terminals of the manufacturing process of C; Figure 13 shows the cross sections of the pixel and gate terminals of the manufacturing process of D to F on the substrate SUB 1 side. Flow chart; Figure 14 is a flowchart of the cross section of the pixel part and the gate terminal part of the manufacturing process G ~ Η on the substrate SUB 1 side; Figure 15 is a peripheral driving circuit mounted on the LCD panel The top view of the state; FIG. 16 is a cross-sectional structure view of a carrier package TC P on which the integrated circuit chip CH I constituting the driving circuit is mounted on a flexible wiring substrate; FIG. 17 is a package with a carrier Status of TCP connected to the scanning signal circuit terminal G TM of the liquid crystal display panel PNL Figure 18 of the cross-section of the main part is an exploded perspective view of the liquid crystal display module; printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs; Figure 19 is the relationship between the direction of the applied electric field, the grinding direction, and the axis of the polarizing plate penetration; FIG. 20 is a plan view of a pixel of a liquid crystal display part of an active matrix type color liquid crystal display device according to Embodiment 2 of the present invention and its surroundings; FIG. 21 is an active matrix color liquid crystal display of Embodiment 3 of the present invention The LCD display part of the device is a plan view of the main part of the pixel and its surroundings, and FIG. 22 is a pixel and its peripheral part of the liquid crystal display of the active matrix type color liquid crystal display device according to Embodiment 4 of the present invention. Plan view of main parts; Chinese National Standard (CNS) A4 specifications (210X297 mm 1 ~ :; _ 494261 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (76) Figures 2 and 3 are examples of the present invention One pixel of the liquid crystal display part of the active matrix type color liquid crystal display device of FIG. 5 and the main parts around it are flat: a surface view; and FIGS. 2A to C are the active matrix color liquid crystal display devices of Embodiment 6 of the present invention. liquid crystal $ 1 of the main part and its surroundings are a plan view and a sectional view; Figures 2 and 5 are a picture of a liquid crystal display part of a $ moving matrix type color 'liquid crystal display device according to Embodiment 7 of the present invention and its surroundings. The plan view of the main part; Fig. 26, Fig. 25 is a sectional view taken along line 6-6 in Fig. 25; Fig. 27 is a sectional view of the thin film transistor TFT taken along line 7-7 in Fig. 25; Fig. 28 is a sectional view of the storage capacitor C stg along lines 8 to 8 in Fig. 25; Fig. 2 A is a plan view near the gate terminal GT Μ and the connection portion of the gate wiring GL, Fig. 2 9 Figure B is a sectional view; Figure 30A is a plan view near the connection between the suction terminal DTM and the image signal line DL; Figure 30B is a sectional view; Figure 3A is a common electrode terminal CTM1 , The common bus line C Β 1 and the common voltage signal line DL near the connection portion of the plan view, Figure 3 1 B is a sectional view; Figure 3 2A is the common electrode terminal CTM2, the common bus line CB 2, And the common voltage signal line CL near the connection portion, FIG. 32 is a sectional view; FIG. 33 is an active matrix color liquid crystal of the present invention The circuit diagram of the display device includes the matrix part and its surroundings; This paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) — _ -79-(Please read the precautions on the back before filling this page) 494261 A7 B7 V. Description of the invention (77) Stomach 3 4 is the driving fluctuation of the active matrix color liquid crystal display device of the present invention; Figure 3 5 is the pixel portion of the manufacturing process A to C of the substrate SUB 1 side and Sectional flow chart of the gate electrode terminal section; Figure 36 shows the flow chart of the pixel section and the gate electrode terminal section of the manufacturing process from D to E on the substrate SUB 1 side; Figure 37 shows the substrate A flowchart of the cross section of the pixel part and the gate electrode terminal part of the manufacturing process of the process F on the SUB 1 side; FIG. 38 is a diagram of a liquid crystal display part of an active matrix color liquid crystal display device according to Embodiment 8 of the present invention A plan view of the main part of the pixel and its surroundings; FIGS. 39 and 9 are plan views of one of the pixels of the liquid crystal display part of the active matrix color liquid crystal display device according to Embodiment 9 of the present invention and the main part of its periphery; and FIG. 40 is the present invention Example 1 〇 Active Matrix Color LCD A plan view of a pixel of the liquid crystal display part of the device and the surrounding parts; Figures 4 1 to D are schematic diagrams of the present invention, and Figure 4 1 A is the potential distribution in the liquid crystal layer when a voltage is applied to the electrodes. Fig. 4 1B is a plan view of the realignment state of the liquid crystal molecules near the central portion of the liquid crystal layer, and Fig. 4 1C is a characteristic diagram of the rotation angle α of the liquid crystal molecules shown in Fig. 4 1B. Figure 4 1D is a characteristic diagram of the transmittance of light penetrating through the upper and lower polarizing plates, the upper and lower substrates, the liquid crystal layer on and between the electrodes, and Figure 4 2 is a schematic diagram of the present invention, and Figure 4 2A It is a characteristic diagram of the state of the equipotential line when a voltage is applied to the transparent electrode. Figures 4 2 Β and 4 2 C are the rotation angles of the liquid crystal molecules in the liquid crystal layer when an electric field is applied. CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling out this page), τ Printed by the Consumer Consumption Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs -80-494261 A7 _____B7 V. Description of the invention (78) and tilt An example of the angle (rising) diagram; The principle diagram of the aperture ratio of the active matrix color liquid crystal display device in Example 11 of the present invention, and Figure 4 A is the potential distribution in the liquid crystal layer when the voltage is printed on the electrodes by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Characteristics [S3 map> Figure 4 3B is the plane of the realignment state of the liquid crystal molecules near the central portion of the liquid crystal layer | cjfl Figure 4 3 C rwr is the rotation angle of the liquid crystal molecules shown in Figure 4 3 Β Characteristic diagram of a. Figure 4 3D is an example of the characteristic diagram of the transmittance distribution of light transmitted through the upper and lower substrate electrodes and the liquid crystal layer between the electrodes. Figure 4 4 is a diagram showing the transverse electric field. In the liquid crystal display device of the present invention, the comparison of the inclination angle of the liquid crystal molecules in the liquid crystal layer in all directions becomes 1 in the characteristic diagram of the simulation result of the viewing angle range of 10 or more. 1 Example of OC symbol description) RDR initial orientation direction GT gate AS i-type semiconductor layer A 〇F anodized oxide film g 1 conductive film d 〇N (+) type semiconductor layer d 1, d 2 conductive film PSV 1 protective film DT MG GT Μ external connection terminal GI gate insulation film T g > T d External connection terminal group The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 81 494261 A7 B7 V. Description of the invention (79) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Edge DTM Drain terminal TST d Inspection terminal CTM Counter electrode terminal E Electric field vector EX Horizontal electric field E y Substrate plane direction φ LC Initial alignment angle a Rotation angle 〇 1 1 Alignment film SUB 1 > 2 GL scan signal CL pair To the electrode signal TFT thin film transistor C st g Storage capacitor PX pixel electrode CT counter electrode DL image signal line SD 1 source CB common bus LC liquid crystal layer FIL color light BM light-shielding film PNL display panel (please read the precautions on the back before filling this page), 11 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -82-494261 A7 B7 V. Description of the invention (80) PCB1 Drive circuit substrate Intellectual property bureau staff of the Ministry of Economic Affairs Consumer Cooperatives printed this paper size Applicable to China National Standard (CNS) A4 specification (210X297 mm) -83-

Claims (1)

494261 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A 8 r B 80, D 8 VI. Patent application range 丨 1. A transverse electric field mode liquid crystal display device with a high aperture ratio, mainly with pixel electrodes and counter electrodes, An active matrix type liquid crystal display device that performs display by using an electric field component substantially parallel to a substrate surface between the pixel electrode and the counter electrode to control liquid crystal molecules of a reversible liquid crystal layer, which is characterized in that at least the pixel electrode or One of the counter electrodes is a transparent electrode, and the initial alignment state of the reversible liquid crystal and the polarization axis of the polarizing plate are configured such that as the electric field component increases, the light transmittance of the display device also increases. When an electric field is applied, the initial orientation state of the reversible liquid crystal layer becomes a uniform alignment state. When an electric field is applied, the liquid crystal molecules between the pixel electrode and the counter electrode and on the transparent electrode actively rotate parallel to the substrate surface, and the light passes through. The maximum value of the transmittance is greater than 4.0%, and the range of the viewing angle from 10 to 1 contrast is more than 40 degrees in a direction perpendicular to the display surface. A full-range of tilt. 2. A transverse electric field type liquid crystal display device with a high aperture ratio, which mainly includes a pixel electrode and a counter electrode, and uses an electric field component control substantially parallel to a substrate surface between the pixel electrode and the counter electrode. An active matrix type liquid crystal display device that displays liquid crystal molecules of a twisted liquid crystal layer is characterized in that at least one of a pixel electrode or a counter electrode is a transparent electrode, and the initial alignment state of the reversible liquid crystal is that of a polarizing plate. The polarization axis is configured as a state where the light transmittance of the display device increases as the electric field component increases. The initial alignment state of the torsionable liquid crystal layer becomes uniform when the electric field is not applied, and its torsional elasticity coefficient is 10 X 1 0 —1 2 N (Newton) or less. 3 · —A horizontal electric field type liquid crystal display device with a high aperture ratio. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). 丨 (Please read the precautions on the back before filling this page) Order- 84-494261 A8 B8 C8 D8 6. Scope of patent application (please read the precautions on the back before filling this page) Mainly have a pixel electrode and a counter electrode, using the pixel electrode and the counter electrode which are approximately parallel to the pixel electrode An active matrix type liquid crystal display device that controls the liquid crystal molecules of a liquid crystal layer that can be twisted to control the electric field component on the substrate surface is characterized in that at least one of the pixel electrode or the counter electrode is a transparent electrode. The initial alignment state of the liquid crystal. The polarization axis of the polarizing plate is configured as a state where the light transmittance of the display device increases as the electric field component increases. The initial alignment state of the reversible liquid crystal layer when no electric field is applied is In the uniform alignment state, the initial pretilt angle of the liquid crystal molecules at the upper and lower interfaces of the liquid crystal layer is 10 degrees or less, and the initial stage of the liquid crystal molecules in the liquid crystal layer State diffusion inclined state, the substrate is formed thereon representative of the picture element electrodes polishing (Rubbing) is not formed thereon in a direction of a substrate to the rubbing direction of the picture element electrodes are the same. 4. A transverse electric field type liquid crystal display device with a high aperture ratio is mainly provided with a pixel electrode and a counter electrode, which can be reversed by using an electric field component control substantially parallel to the substrate surface between the pixel electrode and the counter electrode. The active matrix type liquid crystal display device for displaying liquid crystal molecules of the liquid crystal layer is printed by the consumer cooperative of employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. It is characterized in that at least one of the pixel electrode or the counter electrode is a transparent electrode, which can be reversed. The initial alignment state of the liquid crystal, and the polarizing axis of the polarizing plate is configured as a state in which the light transmittance of the display device increases as the electric field component increases. The initial orientation state of the reversible liquid crystal layer when the electric field is not applied becomes uniform. In the aligned state, the average tilt angle of the liquid crystal molecules of the liquid crystal layer on the transparent electrode is still less than 45 degrees when no electric field is applied. 5. The device according to item 2 of the patent application scope, wherein the twisting elastic coefficient of the liquid crystal is 5 · 1 X 1 0-12 N or less. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) " '-85-494261 Printed by A8 B8 C8 D8 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Scope of patent application 6. The device of item 2 wherein the torsional elastic coefficient of the liquid crystal is 2 X 1 0-12N or less. 7 · If the device in the scope of patent application item 3, wherein the initial pretilt angle of the liquid crystal molecules on the upper and lower interfaces of the reversible liquid crystal layer is 6 degrees or less. 0 · If the device in the scope of patent application item 4, the The average tilt angle of the liquid crystal molecules on the transparent electrodes of the twisted liquid crystal layer is still less than 30 degrees when an electric field is applied. 9. The device according to item 4 of the scope of patent application, wherein the average tilt angle of the liquid crystal molecules on the transparent electrode of the reversible liquid crystal layer is still below 10 degrees when an electric field is applied. 10 · The device according to any one of claims 1 to 4, wherein the pixel electrode or the counter electrode has a double-layer structure composed of a transparent electrode and an opaque metal electrode. 1 1. The device according to any one of claims 1 to 4, wherein the active matrix type liquid crystal display device further has an opposite voltage signal line connected between the opposite electrodes, and is adjacent to and has a gate signal line. The two opposing voltage signal lines are connected to each other through the through holes through the opposing electrodes. 1 2. The device according to any one of claims 1 to 4, wherein the active matrix liquid crystal display device further has a protective film covering the active matrix element and the image signal line, at least the pixel electrode or the One of the counter electrodes is formed on the protective film, and is connected to an active matrix element or a counter voltage signal line through a through hole formed in the protective film. 1 3 · If you apply for any of the items 1 to 4 in the scope of patent application, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm)-86 _ (Please read the precautions on the back before filling in this Page) Order 494261 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of patent application 'The counter electrode is composed of a transparent electrode, and there is a light-shielding pattern between the counter electrode and the image signal line The light-shielding pattern is formed on the same substrate, and a counter electrode is formed on the same substrate. 14. The device according to any one of the claims 1 to 4, wherein the active matrix liquid crystal display device further has a voltage signal connected between opposite electrodes, and the voltage signal line is formed by Metal formation. 1 5 · The device according to item 11 of the scope of patent application, wherein the opposite voltage signal line is formed of metal. 16. The device according to any one of items 1 to 4 of the scope of patent application, wherein the active matrix type liquid crystal display device further has an image signal line, and includes 2 pixels adjacent to the image signal line in one pixel. The three or more opposing electrodes of the opposing electrodes are opaque to the opposing electrodes adjacent to the image signal line. 17. The device according to any one of claims 1 to 4, wherein the transparent conductive film of the transparent electrode is I TO. 18. The device according to item 14 of the scope of patent application, wherein the opposing voltage signal line is formed by Cr, Ta, Ti, Mo, W, Af, or an alloy thereof, or a cladding structure in which the same is laminated. 19. The device according to item 14 of the scope of patent application, wherein the opposing voltage signal line is made of a cladding structure of a transparent conductive film such as IT 0 on Cr, Ta, Ti, Mo, W, Aj ?, or an alloy thereof. Formed. 2 0. The device according to item 15 of the scope of patent application, wherein the counter voltage signal line is transparent by stacking IT 0 and the like on C r, Ta, Ti, Mo, W, A, or an alloy thereof. The cladding structure of the conductive film is formed. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) 87-. * 4, (please read the precautions on the back before filling this page), aT 494261 Α8 Β8 C8 D8 六 、 Scope of patent application 2 1 · The device according to any one of claims 1 to 4 of the scope of patent application 'wherein when no electric field is applied, the initial twist angle of the liquid crystal layer is substantially 0', which lies between the initial alignment direction and an electric field application direction If the dielectric anisotropy Δε of the liquid crystal material is positive, the angle is 45 ° to 90 °, and if the dielectric anisotropy Δε is negative, the angle is 0 ° to 45 °. 2 2 · —A method for manufacturing a liquid crystal display device with a transverse electric field method having a high aperture ratio, which mainly includes a pixel electrode and a counter electrode, and uses a substrate surface substantially parallel to the pixel electrode and the counter electrode. A method for manufacturing an active matrix liquid crystal display device in which an electric field component controls liquid crystal molecules of a liquid crystal layer to perform display, is characterized by scanning at least the uppermost conductive layer of a signal line terminal portion, an image signal line terminal portion, or a counter electrode terminal. Any one of the parts is formed as the first transparent conductive layer, and at least one of the pixel electrode or the counter electrode is formed as the second transparent conductive layer, and is formed in the same process. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) -88-