TW491886B - Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant - Google Patents

Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant Download PDF

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Publication number
TW491886B
TW491886B TW089107528A TW89107528A TW491886B TW 491886 B TW491886 B TW 491886B TW 089107528 A TW089107528 A TW 089107528A TW 89107528 A TW89107528 A TW 89107528A TW 491886 B TW491886 B TW 491886B
Authority
TW
Taiwan
Prior art keywords
dielectric constant
composition
polishing composition
low dielectric
abrasive
Prior art date
Application number
TW089107528A
Other languages
English (en)
Chinese (zh)
Inventor
Eric Jacquinot
Pascal Letourneau
Maurice Rivoire
Original Assignee
Clariant France Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant France Sa filed Critical Clariant France Sa
Application granted granted Critical
Publication of TW491886B publication Critical patent/TW491886B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Element Separation (AREA)
TW089107528A 1999-04-22 2000-04-21 Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant TW491886B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9905123A FR2792643B1 (fr) 1999-04-22 1999-04-22 Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique

Publications (1)

Publication Number Publication Date
TW491886B true TW491886B (en) 2002-06-21

Family

ID=9544750

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089107528A TW491886B (en) 1999-04-22 2000-04-21 Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant

Country Status (17)

Country Link
US (1) US6362108B1 (enExample)
EP (1) EP1046690B1 (enExample)
JP (1) JP3967522B2 (enExample)
KR (1) KR100607919B1 (enExample)
CN (1) CN1153823C (enExample)
AT (1) ATE272100T1 (enExample)
CZ (1) CZ300220B6 (enExample)
DE (1) DE60012399T2 (enExample)
DK (1) DK1046690T3 (enExample)
ES (1) ES2223441T3 (enExample)
FR (1) FR2792643B1 (enExample)
HU (1) HU228376B1 (enExample)
ID (1) ID25822A (enExample)
MY (1) MY124983A (enExample)
PT (1) PT1046690E (enExample)
SG (1) SG83204A1 (enExample)
TW (1) TW491886B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6537563B2 (en) * 2000-05-11 2003-03-25 Jeneric/Pentron, Inc. Dental acid etchant composition and method of use
JP3899456B2 (ja) 2001-10-19 2007-03-28 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
FR2831179B1 (fr) 2001-10-22 2005-04-15 Rhodia Chimie Sa Procede de preparation en milieu aqueux de compositions pigmentaires a base de silice
DE10152993A1 (de) * 2001-10-26 2003-05-08 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität
DE10164262A1 (de) * 2001-12-27 2003-07-17 Bayer Ag Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen
EP1567606A1 (en) * 2002-10-22 2005-08-31 Psiloquest, Inc. A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
US7052373B1 (en) * 2005-01-19 2006-05-30 Anji Microelectronics Co., Ltd. Systems and slurries for chemical mechanical polishing
CN101077961B (zh) * 2006-05-26 2011-11-09 安集微电子（上海）有限公司 用于精细表面平整处理的抛光液及其使用方法
US7501346B2 (en) 2006-07-21 2009-03-10 Cabot Microelectronics Corporation Gallium and chromium ions for oxide rate enhancement
JP6878772B2 (ja) * 2016-04-14 2021-06-02 昭和電工マテリアルズ株式会社 研磨剤、研磨剤用貯蔵液及び研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2677646B2 (ja) * 1988-12-26 1997-11-17 旭電化工業株式会社 コロイダルシリカの製造方法
US5382272A (en) * 1993-09-03 1995-01-17 Rodel, Inc. Activated polishing compositions
US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
MY133700A (en) * 1996-05-15 2007-11-30 Kobe Steel Ltd Polishing fluid composition and polishing method
FR2754937B1 (fr) 1996-10-23 1999-01-15 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium
FR2761629B1 (fr) * 1997-04-07 1999-06-18 Hoechst France Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope
US6046111A (en) * 1998-09-02 2000-04-04 Micron Technology, Inc. Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium

Also Published As

Publication number Publication date
CN1272519A (zh) 2000-11-08
MY124983A (en) 2006-07-31
JP2000351957A (ja) 2000-12-19
FR2792643B1 (fr) 2001-07-27
KR20000071761A (ko) 2000-11-25
CN1153823C (zh) 2004-06-16
SG83204A1 (en) 2001-09-18
DK1046690T3 (da) 2004-09-27
ES2223441T3 (es) 2005-03-01
HU228376B1 (en) 2013-03-28
JP3967522B2 (ja) 2007-08-29
DE60012399T2 (de) 2004-12-23
KR100607919B1 (ko) 2006-08-04
CZ300220B6 (cs) 2009-03-18
HUP0001483A2 (en) 2001-03-28
HU0001483D0 (en) 2000-06-28
DE60012399D1 (de) 2004-09-02
EP1046690A1 (en) 2000-10-25
EP1046690B1 (en) 2004-07-28
PT1046690E (pt) 2004-10-29
US6362108B1 (en) 2002-03-26
ID25822A (id) 2000-11-09
ATE272100T1 (de) 2004-08-15
HUP0001483A3 (en) 2003-02-28
FR2792643A1 (fr) 2000-10-27
CZ20001494A3 (cs) 2001-04-11

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