TW491886B - Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant - Google Patents
Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant Download PDFInfo
- Publication number
- TW491886B TW491886B TW089107528A TW89107528A TW491886B TW 491886 B TW491886 B TW 491886B TW 089107528 A TW089107528 A TW 089107528A TW 89107528 A TW89107528 A TW 89107528A TW 491886 B TW491886 B TW 491886B
- Authority
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- Taiwan
- Prior art keywords
- dielectric constant
- composition
- polishing composition
- low dielectric
- abrasive
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 47
- 239000000203 mixture Substances 0.000 title claims abstract description 34
- 229920000642 polymer Polymers 0.000 title claims abstract description 20
- 239000011810 insulating material Substances 0.000 title claims abstract description 11
- 239000000126 substance Substances 0.000 title claims abstract description 8
- 239000007900 aqueous suspension Substances 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000008119 colloidal silica Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000725 suspension Substances 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 230000002378 acidificating effect Effects 0.000 claims description 8
- 239000012774 insulation material Substances 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000009941 weaving Methods 0.000 claims description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims 1
- 229910052776 Thorium Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000005984 hydrogenation reaction Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- MJOXZELXZLIYPI-UHFFFAOYSA-N titanium(2+) Chemical compound [Ti+2] MJOXZELXZLIYPI-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000008378 aryl ethers Chemical class 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GUHKMHMGKKRFDT-UHFFFAOYSA-N 1785-64-4 Chemical compound C1CC(=C(F)C=2F)C(F)=C(F)C=2CCC2=C(F)C(F)=C1C(F)=C2F GUHKMHMGKKRFDT-UHFFFAOYSA-N 0.000 description 1
- 239000001837 2-hydroxy-3-methylcyclopent-2-en-1-one Substances 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 240000008564 Boehmeria nivea Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- -1 Sha Chemical class 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000002316 fumigant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Element Separation (AREA)
Description
491886 五、發明說明（l) 本發明係關於一種機械化學拋光具 身 聚合物為主的絕緣材料層用之組合^。電常數之以 於石夕晶圓上製作的電子裝置必須利用互 結而組成預定電路。各階金屬互連層必須二祕彼此聯 目的，各階被包囊於電介質層内部。、〜<、象。為達此 J體電路之互連金屬軌最係常根據下述順序 性雜子蝕刻製造:厚約!。-12米之鋁或鋁合金膜n屬反忽 或離子束（濺鍍）沈積；然後互連電路設計藉光刻 反應性離子蝕刻（RIE)移轉至其上。然後如此界定的執炱精 以電介質層覆蓋，電介質層通常係以氧化矽為主，最常 自原矽酸四乙酯（TEOS)之氣相分解。然後此層藉機械化: 抛光平坦化。 + 為了降低由此種電介質感應的電容，所以使用具有低介 電常數的材料組成一路徑。最佳候選材料列舉於^. Η Hendrick-材料研究學會研討會議事錄，第443期，ι997 年，第3-14頁，以及L.Peters-半導體國際- 1 998年9月， 第64-74頁〇 主要相關類別有： -氟化聚（芳基醚類）例如弗雷兒（Flare ®)， -聚（芳基醚類）例如PAE-2， Φ -氟化聚醯亞胺類， -氫化矽倍半氧烷類及烷基矽倍半氧烷類， -貳苯并環丁烯類如塞可汀（Cyclot ene ®) ’ -聚（對-二曱苯）例如派利林（P a r y 1 e n e ® ) N及聚（α，α，
491886
α，三二—四氟—對—二甲苯）例如派利林F， -全氟環丁烷之芳族醚聚合物， -芳族烴類例如西爾克（s丨LK⑧）。 為了結合入微電子互連處理，此等具有低介電常數的聚 合物主要須滿足下列標準· 、 -填補寬度大於0 · 3 5微米的凹溝， -玻璃化溫度大於400它， -濕度吸收率低（< 1 % )， -熱穩定性高（於450 °C < 1%/小時）， -以及對金屬層及其它電介質層之黏著性絕佳。 · 此外’沈積的聚合物層須可藉機械化學拋光平坦化。 Y.L· Wang 等人於薄固體膜，（1 9 9 7)，3〇8 一 3〇9，55〇 一 554頁使用一種磨蝕劑溶液拋光烷基矽氧烷層，該溶液含 _ 有煙薰矽氧粒子於鹼性介質（pH = 1 〇· 2)，或氧化鍅粒子於& 酸性介質（pH =3· 3-4. 6)。 - G· R. Yang等人於電子材料期刊，第26卷，第8期，1997 年’ 9 3 5 - 9 4 0頁研究使用不同磨|虫溶液拋光後所得派利林n 層的表面品質’該溶液含有紹氧粒子於酸性或強驗介質。 所得抛光速度不論採用何種磨餘劑溶液皆為低。 J.M. Neirynck等人於材料研究學會研討會議事錄， 1 9 9 5年，第3 8 1期，2 2 9 - 2 3 5頁嘗試使用含鋁氧粒子於鹼性 介質或酸性介質的磨银劑溶液，拋光三類型具有低介電常 數之聚合物：派利林，苯并環丁烯（BCB)及氟化聚醯亞胺。 目前，具有低介電常數之聚合物層結合於微電子互連處
89l〇7528.ptd 第6頁 491886 五、發明說明（3) 期間於此型材料所得 仍然不足，特別有關 有未藉矽氧烷鍵彼此 矽氧之酸水性懸浮 ’特別是西爾克型為 、拋光一致性以及拋 理主要係來自於機械化學拋光平坦化 性能不足。對於此種階段的熟悉程度 拋光速度及抛光面的表面狀態。 令人I異且出乎意外地發現使用含 相連之膠體矽氧粒子的陽離子化膠體 液，允許拋光以低介電常數之聚合物 主的絕緣材料層，結果有關拋光速度 光面的表面狀態間獲得極佳折衷。 育，，本申睛案之主題為一種機械化學拋光以低介電 主的絕緣材料層用之組合物，其特 種！水性懸浮液，其是由含有未藉彻i彼 浮介質的：：：：秒乳粒子的陽離子化膠體梦氧及作為懸 「=子化㈣碎氧之酸水性懸浮液」-詞表示膠 t表面精三價或四價金屬氧化物例如鋁、鉻、 …生的酸水性懸浮液，特別說明 、、…。 π二威利科技公司⑴79年)」一書， 性懸J:本：ί ί ί佳條件下，胃離子化膠體矽氧之酸水 係由約50%重3量比氫猎氣石夕二烷鍵彼此相連之膠體矽氧粒子， 驗性石夕氧、、容牌及於\二 液獲得，其*以納穩定化之 ΡΗ介二Γ至:9係於攪動下導入。藉此方式獲得 本宰中=子化膠體石夕氧粒子的穩定懸浮液。 料」U=T低介電常數聚合物為主的絕緣材 1表不由PH.ToWSend等人於材研究學會研討會議事 五、發明說明（4) 錄，1 997年’476期，9-17頁說明的材料。此種材料係由 黏度30厘泊（centipoises)之寡聚物溶液組成，其聚合反 應無需催化劑且不會導致水的生成。聚合網路為不含氟之 芳族烴。其電介常數為2.65，玻璃化溫度大於49〇^及折 射指數為1. 6 3。 施本發明較佳條件下，前述膠體碎氧水性懸浮液係 ^貝或四價金屬氧化物例如紹、鉻、鎵 是鋁陽離子化。 :實施本發明之較佳條件下，前述機械化學拋光組合物 具有pH於1至6，且較佳於2至4。 ^ ^另Λ細*本發明之較佳條件下，前述拋光組合物含 2未猎矽氧烷鍵彼此相連之陽離子化膠體矽 且 直徑於3至250毫微米且較佳丨〇至5〇毫微米間。 - 題亦係關於一種機械化學拋光以低介電常數 :;用Ϊ麻=緣材料層之方法’其中絕緣材料層之磨蝕 織物摩擦該層進行，其特徵在於磨姓劑 =性懸浮液，其是由含有未藉石夕氧烧鍵彼此相 所的1所/:矽乳粒子的陽離子化膠體矽氧及4乍為懸浮介 貝的水所組成。 機ΐ 種主題亦係有關一種磨蝕劑，其特別可用於 先以低介電常數聚合物為主的絕緣材料層，該 織：浸潰以酸水性懸浮液，…未藉石夕氧 立髀麵故1 /於1至6間’直徑於3至25〇毫微米間之分 '^子的陽離子化膠體⑦氧及作為懸浮介質的水
^1886 五、發明說明（5) —---— ____ 所組成。 貫施前述磨蝕劑組合物之輕 前述其它主題。 土條件也可應用作本發明之 '餐由參照下列實例將更了自 的# Μ 1 、 本發明之範圍，下歹丨】實例目 二係％况本發明的優點。 彳K W曰 劑組合物1 未ί = ί物係由請氧之酸水性懸浮液組成，含有 3 =鍵彼此相連的膠體石夕氧粒子，以及藉前述氫氣 隹呂％離子化，具有下列特徵： 一水性懸浮液pH: 3. 5 -勝體石夕氧元體粒子平均直徑· 5 〇毫微米 —膠體矽氧濃度重量比：30% 獲得根據本發明之磨蝕劑組合物】。 舍物機械化學拋光例 厚1 ο ο ο 〇埃之西爾克沈積係經由於2 〇 〇毫米直徑矽晶圓上 離心進行。然後該層於後固化期間於4 5 〇聚合。 然後晶圓於下列拋光條件下於pRESI 2〇〇〇拋光機上拋 光·· -外加壓力 -轉台速度 -頭速度 -磨#溫度 -磨餘速率 -織物
0· 5daN/平方厘米 3 0 r pm 42rpm 10 °C 100立方厘米/分鐘 IC 1400A1得自羅德（R〇del)產品公司
89107528.ptd 第9頁 491886 五、發明說明（6) 拋光速度及非均勻度係於拋光前及拋光後於晶圓上1 7個 點使用橢圓量測計測量西爾克厚度決定。 磨蝕劑組合物1可得下列結果： -西爾克拋光速度400 0埃/分鐘， -於光學减微鏡下親祭並無刮痕。 實例3 :磨银劑組合物2 磨蝕劑組合物2類似磨蝕劑組合物丨，但膠體石夕氧之濃度 重量比為1 5 %。 獲得根據本發明之磨餘劑組合物2。 f例4 :使用磨蝕劑組合物2進行爐械 使用如實例2的相同拋光參數，磨蝕劑組合物2 結果： 」付卜列 -西爾克拋光速度6 0 0 0埃/分鐘， -於光學顯微鏡檢查下未見刮痕。 相對於實例2，儘管活性成分濃度低兩 光速度改良。 ϋ仁西爾克拋 實例5 :磨餘劑組合物3 磨蝕劑組合物3係由膠體矽氧之酸水Η辟％、 土您洋液植成，人 有未藉石夕氧烧鍵彼此相連的膠體石夕氧粒子，、 —、3 氯化鋁陽離子化，具有下列特徵： ’以及藉前述氫 〜水性懸浮液pH: 3. 5 一膠體矽氧元體粒子平均直徑·· 2 5毫微米 〜膠體矽氧濃度重量比：4. 4% 獲得根據本發明之磨钱劑組合物3。
89107528.ptd 第10頁 ^1886 五 、發明說明（7) 复A—6:使用磨蝕劑組合物3進行化學拋光例 使用如實例2的相同拋光參數，磨蝕劑組合物3可得下 結果： 〜西爾克拋光速度3560埃/分鐘， 一於光學顯微鏡檢查下未見刮痕。 I較例1 f蝕劑組合物係由膠體矽氧之酸水性懸浮液組成，含有 未藉矽氧烧鍵彼此相連的膠體矽氧粒子，其特徵如下· —水性懸浮液pH: 2. 5 ·
一膠體矽氧元體粒子平均直徑·· 5 〇毫微米 〜膠體矽氧濃度重量比：30% ，由使用如實例2之相同拋光參數製成的磨蝕 後得下列結果： 口 —西爾克拋光速度14埃/分鐘。 無法用於以低介電常 如此低的拋光速度造成此種組合物 數聚合物為主的層之拋光。 氧酸水性懸浮液相對於使 因此，可見使用陽極化膠體石夕 用膠體矽氧酸水性懸浮液的效益
=劑组合物係由膝體石夕氧之驗水性懸浮液組成， 禾糟石夕乳烷鍵彼此相連的膠體 -水性懸浮液pH:1〇,8 h拉子，其特徵如下: 氧元體粒子平均直徑:50毫微米 月乡肢矽氧濃度重量比：30〇/〇
491886 五、發明說明（8) 經由使用如實例2之相同拋光參數製成的磨蝕劑組合物 獲得下列結果： -西爾克拋光速度6 2埃/分鐘。 如此低的拋光速度造成此種組合物無法用於以低介電常 數聚合物為主的層之抛光。 因此，可見使用陽極化膠體矽氧酸水性懸浮液相對於使 用膠體矽氧酸水性懸浮液的效益。 m
89107528.ptd 第12頁 491886
89107528.ptd 第13頁
Claims (1)
- L\y 1 oou L\y 1 oou 12. 3; 修i本料芦用之ϊίI學抛&以低介電常數聚合物為主的絕緣材 六 懸浮液，、二在於拋光組合物包含-種酸水性 粒子，彼：門i“離子化勝體石夕氧其含有分立膠體石夕氧 彼此間未精矽氧烷鍵相連及水作為懸浮介質。 科Μ石^請專利範圍第1項之機械化學拋光組合物，盆中 I體…酸水性懸浮液係藉銘、鉻、鎵、鈦、錯陽、離子 請專利範圍第2項之機械化學拋光組合物，其中 ^石夕氣之酸水性懸浮液係藉氫氣化㈣離子化。 合物如Hi利範圍第1至3項中任一項之機械化學拋光組 口物，其中該組合物具有仰為1至6。 j έΗ a Γ巧專利範圍第4項之機械化學拋光組合物，直中 違組合物具有pH為2至4。 ，、 6.=申請專利範圍第4項之機械化學拋光組合物，宜中 ===物包含彼此未藉石夕氧烧鍵相連的分立石夕 子、， 具有直徑於3至2 5 0毫微米。 兮H中睛專利範圍第6項之機械化學拋光組合物，里中 :::物包含彼此未藉石夕氧烧鍵相連的分立石夕氧粒子、，且 具有直徑於1 0至5 0毫微米。 料8層：m匕ί拋光以低介電常數聚合物為主的絕緣材 織：摩：兮展：亥絕緣材料層之磨蝕係使用含磨蝕劑之 π π了 g進仃，其特徵在於磨蝕劑含有一種酸水性懸 二:〗ί由含有未藉矽氧烷鍵彼此相▲之分立膠體矽氧 y 、除離子化膠體矽氧及作為懸浮介質的水所組成。 89107528.ptc 第14頁491886 案號 89107528 曰 修正 六、申請專利範圍 9.如申請專利範圍第8項之機械化學拋光方法，其中該 以低介電常數聚合物為主的絕緣材料為西爾克（S i LK ®)類 別。 1 0. —種磨蝕劑其可用於機械化學拋光以低介電常數聚 合物為主的絕緣材料層，該磨蝕劑包含一織物浸潰以酸水 性懸浮液，其是由未藉矽氧烷鍵彼此相連，pH於1至6間， 直徑於3至2 5 0毫微米間之分立膠體矽氧粒子的陽離子化膠 體矽氧及作為懸浮介質的水所組成。89107528.ptc 第15頁
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| US6537563B2 (en) * | 2000-05-11 | 2003-03-25 | Jeneric/Pentron, Inc. | Dental acid etchant composition and method of use |
| JP3899456B2 (ja) | 2001-10-19 | 2007-03-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| FR2831179B1 (fr) | 2001-10-22 | 2005-04-15 | Rhodia Chimie Sa | Procede de preparation en milieu aqueux de compositions pigmentaires a base de silice |
| DE10152993A1 (de) * | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
| DE10164262A1 (de) * | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
| AU2003282852A1 (en) * | 2002-10-22 | 2004-05-13 | Psiloquest, Inc. | A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces |
| JP2005268667A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| US7052373B1 (en) * | 2005-01-19 | 2006-05-30 | Anji Microelectronics Co., Ltd. | Systems and slurries for chemical mechanical polishing |
| CN101077961B (zh) * | 2006-05-26 | 2011-11-09 | 安集微电子（上海）有限公司 | 用于精细表面平整处理的抛光液及其使用方法 |
| US7501346B2 (en) * | 2006-07-21 | 2009-03-10 | Cabot Microelectronics Corporation | Gallium and chromium ions for oxide rate enhancement |
| JP6878772B2 (ja) * | 2016-04-14 | 2021-06-02 | 昭和電工マテリアルズ株式会社 | 研磨剤、研磨剤用貯蔵液及び研磨方法 |
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| US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
| DE69611653T2 (de) * | 1995-11-10 | 2001-05-03 | Tokuyama Corp | Poliersuspensionen und Verfahren zu ihrer Herstellung |
| MY133700A (en) * | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
| FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
| FR2761629B1 (fr) * | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
| US6046111A (en) * | 1998-09-02 | 2000-04-04 | Micron Technology, Inc. | Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates |
| FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
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| CZ300220B6 (cs) | 2009-03-18 |
| KR100607919B1 (ko) | 2006-08-04 |
| EP1046690A1 (en) | 2000-10-25 |
| JP3967522B2 (ja) | 2007-08-29 |
| CN1272519A (zh) | 2000-11-08 |
| ID25822A (id) | 2000-11-09 |
| DE60012399T2 (de) | 2004-12-23 |
| HU0001483D0 (en) | 2000-06-28 |
| HUP0001483A3 (en) | 2003-02-28 |
| EP1046690B1 (en) | 2004-07-28 |
| FR2792643A1 (fr) | 2000-10-27 |
| FR2792643B1 (fr) | 2001-07-27 |
| MY124983A (en) | 2006-07-31 |
| HU228376B1 (en) | 2013-03-28 |
| ES2223441T3 (es) | 2005-03-01 |
| US6362108B1 (en) | 2002-03-26 |
| SG83204A1 (en) | 2001-09-18 |
| JP2000351957A (ja) | 2000-12-19 |
| CZ20001494A3 (cs) | 2001-04-11 |
| KR20000071761A (ko) | 2000-11-25 |
| PT1046690E (pt) | 2004-10-29 |
| DK1046690T3 (da) | 2004-09-27 |
| HUP0001483A2 (en) | 2001-03-28 |
| CN1153823C (zh) | 2004-06-16 |
| DE60012399D1 (de) | 2004-09-02 |
| ATE272100T1 (de) | 2004-08-15 |
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