DE60012399D1 - Zusammensetzung zum mechanisch-chemischen Polieren von Schichten aus Isoliermaterial auf Basis eines Polymers mit niedriger Dielektrizitätskonstanz - Google Patents
Zusammensetzung zum mechanisch-chemischen Polieren von Schichten aus Isoliermaterial auf Basis eines Polymers mit niedriger DielektrizitätskonstanzInfo
- Publication number
- DE60012399D1 DE60012399D1 DE60012399T DE60012399T DE60012399D1 DE 60012399 D1 DE60012399 D1 DE 60012399D1 DE 60012399 T DE60012399 T DE 60012399T DE 60012399 T DE60012399 T DE 60012399T DE 60012399 D1 DE60012399 D1 DE 60012399D1
- Authority
- DE
- Germany
- Prior art keywords
- polymer
- insulating material
- dielectric constant
- low dielectric
- material based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011810 insulating material Substances 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 title abstract 4
- 229920000642 polymer Polymers 0.000 title abstract 4
- 239000000126 substance Substances 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000002253 acid Substances 0.000 abstract 3
- 239000007900 aqueous suspension Substances 0.000 abstract 3
- 239000008119 colloidal silica Substances 0.000 abstract 2
- 239000004744 fabric Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9905123A FR2792643B1 (fr) | 1999-04-22 | 1999-04-22 | Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique |
FR9905123 | 1999-04-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60012399D1 true DE60012399D1 (de) | 2004-09-02 |
DE60012399T2 DE60012399T2 (de) | 2004-12-23 |
Family
ID=9544750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60012399T Expired - Lifetime DE60012399T2 (de) | 1999-04-22 | 2000-04-19 | Zusammensetzung zum mechanisch-chemischen Polieren von Schichten aus Isoliermaterial auf Basis eines Polymers mit niedriger Dielektrizitätskonstanz |
Country Status (17)
Country | Link |
---|---|
US (1) | US6362108B1 (de) |
EP (1) | EP1046690B1 (de) |
JP (1) | JP3967522B2 (de) |
KR (1) | KR100607919B1 (de) |
CN (1) | CN1153823C (de) |
AT (1) | ATE272100T1 (de) |
CZ (1) | CZ300220B6 (de) |
DE (1) | DE60012399T2 (de) |
DK (1) | DK1046690T3 (de) |
ES (1) | ES2223441T3 (de) |
FR (1) | FR2792643B1 (de) |
HU (1) | HU228376B1 (de) |
ID (1) | ID25822A (de) |
MY (1) | MY124983A (de) |
PT (1) | PT1046690E (de) |
SG (1) | SG83204A1 (de) |
TW (1) | TW491886B (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6537563B2 (en) * | 2000-05-11 | 2003-03-25 | Jeneric/Pentron, Inc. | Dental acid etchant composition and method of use |
JP3899456B2 (ja) | 2001-10-19 | 2007-03-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
FR2831179B1 (fr) | 2001-10-22 | 2005-04-15 | Rhodia Chimie Sa | Procede de preparation en milieu aqueux de compositions pigmentaires a base de silice |
DE10152993A1 (de) * | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
DE10164262A1 (de) * | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
AU2003282852A1 (en) * | 2002-10-22 | 2004-05-13 | Psiloquest, Inc. | A corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces |
JP2005268667A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
US7052373B1 (en) * | 2005-01-19 | 2006-05-30 | Anji Microelectronics Co., Ltd. | Systems and slurries for chemical mechanical polishing |
CN101077961B (zh) * | 2006-05-26 | 2011-11-09 | 安集微电子(上海)有限公司 | 用于精细表面平整处理的抛光液及其使用方法 |
US7501346B2 (en) * | 2006-07-21 | 2009-03-10 | Cabot Microelectronics Corporation | Gallium and chromium ions for oxide rate enhancement |
JP6878772B2 (ja) * | 2016-04-14 | 2021-06-02 | 昭和電工マテリアルズ株式会社 | 研磨剤、研磨剤用貯蔵液及び研磨方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2677646B2 (ja) * | 1988-12-26 | 1997-11-17 | 旭電化工業株式会社 | コロイダルシリカの製造方法 |
US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
DE69611653T2 (de) * | 1995-11-10 | 2001-05-03 | Tokuyama Corp | Poliersuspensionen und Verfahren zu ihrer Herstellung |
MY133700A (en) * | 1996-05-15 | 2007-11-30 | Kobe Steel Ltd | Polishing fluid composition and polishing method |
FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
FR2761629B1 (fr) * | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
US6046111A (en) * | 1998-09-02 | 2000-04-04 | Micron Technology, Inc. | Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates |
FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
-
1999
- 1999-04-22 FR FR9905123A patent/FR2792643B1/fr not_active Expired - Lifetime
-
2000
- 2000-04-12 HU HU0001483A patent/HU228376B1/hu not_active IP Right Cessation
- 2000-04-18 SG SG200002196A patent/SG83204A1/en unknown
- 2000-04-18 MY MYPI20001633A patent/MY124983A/en unknown
- 2000-04-19 EP EP00810343A patent/EP1046690B1/de not_active Expired - Lifetime
- 2000-04-19 AT AT00810343T patent/ATE272100T1/de not_active IP Right Cessation
- 2000-04-19 ES ES00810343T patent/ES2223441T3/es not_active Expired - Lifetime
- 2000-04-19 DK DK00810343T patent/DK1046690T3/da active
- 2000-04-19 PT PT00810343T patent/PT1046690E/pt unknown
- 2000-04-19 DE DE60012399T patent/DE60012399T2/de not_active Expired - Lifetime
- 2000-04-20 US US09/553,037 patent/US6362108B1/en not_active Expired - Lifetime
- 2000-04-20 ID IDP20000313D patent/ID25822A/id unknown
- 2000-04-21 TW TW089107528A patent/TW491886B/zh not_active IP Right Cessation
- 2000-04-21 KR KR1020000021188A patent/KR100607919B1/ko active IP Right Grant
- 2000-04-21 CZ CZ20001494A patent/CZ300220B6/cs not_active IP Right Cessation
- 2000-04-21 CN CNB001180320A patent/CN1153823C/zh not_active Expired - Lifetime
- 2000-04-21 JP JP2000120314A patent/JP3967522B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CZ300220B6 (cs) | 2009-03-18 |
KR100607919B1 (ko) | 2006-08-04 |
EP1046690A1 (de) | 2000-10-25 |
JP3967522B2 (ja) | 2007-08-29 |
CN1272519A (zh) | 2000-11-08 |
ID25822A (id) | 2000-11-09 |
DE60012399T2 (de) | 2004-12-23 |
HU0001483D0 (en) | 2000-06-28 |
HUP0001483A3 (en) | 2003-02-28 |
EP1046690B1 (de) | 2004-07-28 |
FR2792643A1 (fr) | 2000-10-27 |
FR2792643B1 (fr) | 2001-07-27 |
MY124983A (en) | 2006-07-31 |
HU228376B1 (en) | 2013-03-28 |
ES2223441T3 (es) | 2005-03-01 |
US6362108B1 (en) | 2002-03-26 |
TW491886B (en) | 2002-06-21 |
SG83204A1 (en) | 2001-09-18 |
JP2000351957A (ja) | 2000-12-19 |
CZ20001494A3 (cs) | 2001-04-11 |
KR20000071761A (ko) | 2000-11-25 |
PT1046690E (pt) | 2004-10-29 |
DK1046690T3 (da) | 2004-09-27 |
HUP0001483A2 (en) | 2001-03-28 |
CN1153823C (zh) | 2004-06-16 |
ATE272100T1 (de) | 2004-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA |