TW490865B - Luminescence-diode-chip and its production method - Google Patents

Luminescence-diode-chip and its production method Download PDF

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Publication number
TW490865B
TW490865B TW090109275A TW90109275A TW490865B TW 490865 B TW490865 B TW 490865B TW 090109275 A TW090109275 A TW 090109275A TW 90109275 A TW90109275 A TW 90109275A TW 490865 B TW490865 B TW 490865B
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TW
Taiwan
Prior art keywords
light
emitting diode
patent application
scope
item
Prior art date
Application number
TW090109275A
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English (en)
Inventor
Georg Bogner
Siegmar Kugler
Gerald Neumann
Ernst Nirschl
Raimund Oberschmid
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Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
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Publication of TW490865B publication Critical patent/TW490865B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Description

490865 六、申請專利範圍 面（8)之此側面上。 17·如申請專利範圍第7項之發光二極體晶片，其中第二電流 引線（71)由一種在射出面（8)或光學元件（41，42,43,44)上未 完全將其覆蓋之電性接觸區所形成^ 18·如申請專利範圍第16項之發光二極體晶片，其中第二電 流引線（71)由一種在射出面（8)或光學元件（41，42,43,44)上 未完全將其覆蓋之電性接觸區所形成。 19. 如申請專利範圍第16項之發光二極體晶片，其中第二電 流引線（72)由一種與視窗層（2)相連且配置在視窗層（2)之 遠離射出面（8)之此側上之電性接觸區所形成。 20. 如申請專利範圍第1或第2項之發光二極體晶片，其中第 二電流引線（73)由一種連接該活性層所用之電性接觸區所 «t-μ. 成。 21.如申請專利範圍第14項之發光二極體晶片，其中各電流 引線（6,71，72,7 3,74)及/或隔離層（5)對所發出之光是有反射 性的。 22.如申請專利範圍第16項之發光二極體晶片，其中各電流 引線（6,71，72,73,74)及/或隔離層（5)對所發出之光是有反射 性的。 、 23·如申請專利範圍第17項之發光二極體晶片，其中各電流 引線（6,71，72,73,74)及/或隔離層（5)對所發出之光是有反射 性的。 24·如申請專利範圍第1 9項之發光二極體晶片，其中各電流 引線（6,71，72,73,74)及/或隔離層（5)對所發出之光是有反射 -4- 490865 六、申請專利範圍 性的。 25·如申請專利範圍第20項之發光二極體晶片，其中各電流 引線（6,71，72,73,74)及/或隔離層（5)對所發出之光是有反射 性的。 26如申請專利範圔第1或第2項之發光二極體晶片，其中在 視窗層（2)中（上）或活性層（3)中（上）在活性層（3)之遠離此 射出面（8)之此側上形成一種已發射之光束用之反射元 件。 27如申請專利範圍第26項之發光二極體晶片，其中此反射 元件是布拉格（Bragg)柵格。 28.如申請專利範圍第1或第2項之發光二極體晶片，其中此 視窗層（2)及/或光學元件（41，42,43,44)至少一部份設有對 所發射之光是透明之封罩。 29·如申請專利範圍第7項之發光二極體晶片，其中此視窗層 (2)及/或光學元件（41，42,43,44)至少一部份設有對所發射 之光是透明之封罩。 30·如申請專利範圍第1或第2項之發光二極體晶片，其中此 發光二極體晶片是一種發光二極體（LED)。 31·—種在發光組件之表面上製造透鏡結構之方法，此發光組 件特別是指如申請專利範圍第1至24項中任一項所述者， 其特徵爲： 在發光組件（1)之發出或通過光線所用之外表面（8)上藉 由銑切工具或切鋸工具或蝕刻方法由發光組件（1)或對著 外表面（8)內部而形成透鏡結構（42，43)。 -5- 490865 六、申請專利範圍 32如申請專利範圍第31項之方法，其中形成球面透鏡（4丨）或 環帶透鏡（42,43)作爲透鏡結構。 33如申請專利範圍第31或32項之方法，其中在切割這些仍 存在於晶圓複合物中之各別之發光組件時藉由一種切鋸工 具（5 10)或銑切工具而製成透鏡結構。 34如申請專利範圍第33項之方法，其中切鋸工具（510)或銑 切工具具有：一種狹窄部（512)，使各別之半導體組件（502 至507)由晶圓複合物（501)中分離；及一種與透鏡（41)之即 將製成之形式相對應之成型部（513)，用來製成透鏡（41)。
TW090109275A 2000-04-19 2001-04-18 Luminescence-diode-chip and its production method TW490865B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10019665A DE10019665A1 (de) 2000-04-19 2000-04-19 Lumineszenzdiodenchip und Verfahren zu dessen Herstellung

Publications (1)

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Country Status (7)

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US (2) US7026657B2 (zh)
EP (1) EP1275159B1 (zh)
JP (2) JP2004501507A (zh)
CN (1) CN1286190C (zh)
DE (1) DE10019665A1 (zh)
TW (1) TW490865B (zh)
WO (1) WO2001080322A2 (zh)

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Publication number Publication date
EP1275159A2 (de) 2003-01-15
JP2004501507A (ja) 2004-01-15
US20040036080A1 (en) 2004-02-26
EP1275159B1 (de) 2017-10-11
CN1286190C (zh) 2006-11-22
CN1437770A (zh) 2003-08-20
DE10019665A1 (de) 2001-10-31
US7306960B2 (en) 2007-12-11
US7026657B2 (en) 2006-04-11
JP2012049571A (ja) 2012-03-08
US20060138439A1 (en) 2006-06-29
WO2001080322A3 (de) 2002-03-28
WO2001080322A2 (de) 2001-10-25

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