TW479257B - Rewritable optical information medium - Google Patents

Rewritable optical information medium Download PDF

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TW479257B
TW479257B TW089123618A TW89123618A TW479257B TW 479257 B TW479257 B TW 479257B TW 089123618 A TW089123618 A TW 089123618A TW 89123618 A TW89123618 A TW 89123618A TW 479257 B TW479257 B TW 479257B
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layer
information medium
thickness
optical information
scope
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TW089123618A
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Guo-Fu Zhou
Bernardus Antonius Joha Jacobs
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Koninkl Philips Electronics Nv
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • G11B7/24067—Combinations of two or more layers with specific interrelation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B2007/24302—Metals or metalloids
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    • G11—INFORMATION STORAGE
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
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    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
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    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25711—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing carbon
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00454—Recording involving phase-change effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
    • G—PHYSICS
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2595—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on gold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Recording Or Reproduction (AREA)

Description

4/9257 五、發明說明（1) __ 寫關於：個透過雷射光束而可供高速記錄的可重 而該包含一個承載堆疊層的基材 Sb、和丁1則依序包含了第一介電層，-個包含由Ge、 、組成之合金的相變化物質的記錄展，笛一 以及一個金屬反射層。 3 —介電層 料i ϋ明也是關於這種光學記錄媒體在高储存密户ik上-枓傳輪率之應用上的用途。 仔山度與向資 以相變化原理為基礎的光學資訊或資 ，，因為它兼備了直接覆寫（則及高:存=存;ν艮吸弓^人 、田射光束在一個結晶質的薄膜 個聚焦 f相記錄記號。在記錄資訊期間，該；；=、的非結 射光束移動，_光束也依照所要於聚焦的雷 ^ 因此，相變化記錄層在急速冷卻後合/為产週田的 域形成非結晶相的眘 __ a在…遮蔽的區 晶相。而以同=1:二；蔽的區域内仍保持結 …丨j田射九加熱再結晶化後g , :錄記號。非結晶相記錄記號代表資料位元，；=晶相 晶相記錄記號；!：=卿予以再生。記錄層上非結 光束依據經編碼：々4 f射率不同’使得調變過的雷射 電流。 ，·、、及圮錄的數位資訊被探測器轉換成調變光 也號 輸，記 傳率相 料速晶 資晶結 高結非 是高的 就有錄 求層記 要錄前 勺己t AR=口 d^y 要要證 重需保 曰取表要 個代若 一 見 。 的率間 錄輸時 記傳aBB 學料結 光資的 化高短 變而極 相。是 率就 479257 五、發明說明（2) 在直接覆寫的過程中結晶化，則記錄層應該有一個能與該· 媒體之相對於雷射光束的線性速度相配合的結晶時間。假 &、结晶速度太慢而配合不上媒體之相對於雷射光束的線性 速度’則先前記錄的舊資料（非結晶相記錄記號）便無法在 t接覆寫期間完全抹除（再結晶化）。如此便會造成高雜訊 的情況。高結晶速度在高密度記錄與高資料傳輸率的應用 上是特別需要的，比如說碟形的DVD + RW，DVR-red與 Dvf blue，及CD-RW，其完全抹除時間（CET)皆必須略低於 50毫微秒（ns)。以DVD + RW來說，每一片120毫米（mm)的碟 片有4. 7GB的記錄密度，需要每秒33百萬位元（Mbits)的資朴 料傳輸率，而D V R - r e d則需每秒3 5百萬位元。以可重寫入 相變化光學記錄系統來說，例如DVR -b 1 ue (以藍色雷射光 束運作的數位影像記錄），則要求高於每秒5 q百萬位元的 資料傳輸率。 在開場文中提到的光學資訊媒體是已知的美國專利，專 利案號是US 5，1 9 1，5 6 5。該相變化型式的媒體包含一個碟 形承載堆疊層的基材，而該堆疊層則依序包含了第一介電 層，一個包含鍺、銻和鎊合金的相變化物質的記錄層，j 一介電層跟一個金屬反射層。我們可將這樣的一個堆疊層 稱為IP IM結構，Μ代表一個反射或鏡射層，丨代表一個;: 層，而Ρ代表一個相變化記錄層。該專利揭示了一個在二兒 凡組合物圖中（圖丨）圍繞在化合物附近具7〇毫微 秒脈衝時間的執跡，該脈衝時間為“”^以組合物開始钟 晶的時間。此時間不等於完全抹除時間⑶丁，而"是更#短°。'、’°
479257 五、發明說明（3) 完全抹除時間CET是定義為在一個結晶環境中，一個非結 晶相記錄記號的完全結晶化所需的抹除脈衝的最短時間， 該時間則是以靜態的方式測量的。抹除一個非結晶相記號 需要兩個過程，晶核過程及晶粒（微晶）成長。上述專利所 提到的時間是指晶核過程的時間，也就是第一次觀覺到微 晶的時間。完全抹除，也就是非結晶相記號的完全結晶 化，仍需要額外的十個或更多的毫微秒。上述的專利讓我 們了解到在三元組合物圖中GeTe至Sb2Te3的連結線上會結
晶的更快，例如化合物G S T ☆ ( G e22 2 S J 2 )b. 依原子 百分比）的晶核過程時間為5 0毫微秒，而本專利申請人的 實驗顯示該化合物的CET值為5 3毫微秒。 本發明的一個目的就是要提供，特別是，適合做高速光 學記錄的可重寫入光學資訊媒體，例如DVD-RAM及光學帶 等需要50毫微秒或更短CET值的媒體。本文中高速記錄是 指媒體之相對於雷射光束的線性速度至少7. 2 m / s以上，也 就是光碟（Compact Disc)標準的六倍。 依照本發明如開場文中所述的光學儲存媒體可達到以上 的目的，該媒體的特徵是在記錄層中包含一種合金，其成 分依原子百分比是定義在Ge-Sb-Te三元組合物圖中某一區 域内，該區域為一個五角形區域，其五個頂點如下：
e24. 6 S b2〇 2 T e55. 2 (A) e23. 5^^19.2 ^ e57. 3 (B) e20. δ Sb20> 5 T e59. 0 (C) ei8. 8 Sb22. 6 T e58, 6 (D) 第7頁 479257 五、發明說明
Ge20.lSb23.7Te56 2 ⑴ -第一介電層的厚度為7〇到（7〇+ λ/2η)毫微米，其中λ是 雷射光束的波長，η是本層的折射率； 一記錄層的厚度為1 0到3 5毫微米； 一第二介電層的厚度為1 0到5 0毫微米； —金屬反射層的厚度為6 0到1 6 0毫微米。 令人驚譯的是，在三角形的三元Ge_Sb-Te組合物圖中 (見圖1)ABCDE五角形區域内的合金呈現出50毫微秒的CET 值或更短’或甚至低於4 5毫微秒。這些合金的組成成分是 位於連接組合物G e τ e到s b2 T e3之連接線的左方，並且呈現 出比此連接線上的偽二元化合物G e2 S b2 T e5更短的C E T值。 這與前述美國專利案5，1 9 1，5 6 5號大不相同，該專利案是 說離開GeTe到Sb2Te3的連接線將會使晶核過程時間從化合 物〇623132了65的50毫微秒增加到位於左方合金的70毫微秒成 更多。ABCDE以外區域的CET值則超過50毫微秒。 特別有用的合金其成分為： (GeJbJesVxTex 其中莫耳分率X為：〇.〇1$x^〇.43 這些組合物是位於三元組合物圖中連接Ge2Sb2Te5和^連命 接線上，但不超出ABCDE五角形區域。圖1中的頂點C相當 於一個組合物其x=0.43(G e2G 5 S b2G 5 T e59。）。 根據本發明進一步改良的媒體中，X值符合：0 · 0 2 $ X ^ 〇· 35。用這些X的值，可得到低於45毫微秒的CET值。
479257 五、發明說明（5) ^- (x = 0.23)所得CET值為44毫微秒。 第一介電層，即介於基材和相變化記錄層中間的一層， 可保護記錄層免於受潮和基材免於受熱的損害，並且可使 光學對比度最佳化。為使顫動減至最小，第二介電層的厚 度最好至少70毫微米。以光學對比度的角度來說，^層= 厚度需限制在（7 〇 + λ / 2 η )毫微米以内，其中λ是雷射光束 的波長，而η是第一介電層的折射率。 上述Ge-Sb-Te合金的CET值取決於記錄層的厚度。如果 該層厚度增加到1 〇毫微米則CET值會迅速降低，而且若繼 縯增加该層厚度則C E T值將達到5 0毫微秒或更少。當記錄 層厚度超過25毫微米，CET值便與厚度無關。超過35毫微 米時’則對媒體的循環性（cyclabi H ty )有負面影響。媒 體的循環性是以在大量直接覆寫循環之後，例如十萬 (1 05)次’光學對比度的相對變化來衡量。在每個循環中 非結晶相位元經由雷射光加熱再結晶化後抹除，而同時寫 入新的非結晶相記號。在理想的狀況下，光學對比度在循 環之後仍保持不變。實際上，循環性在記錄層厚度達到3 5 宅微米W是保持不變的。在考慮到cΕτ值與循環性的需求 後’記錄層的厚度應該在丨〇到3 5毫微米之間，最好在2 〇到 35 *微米之間，更好是25到35毫微米之間。一個有25到35 宅微米厚度記錄層的媒體，在第一個1 〇5次直接覆寫循環 期間會維持低顫動。 第二介電層，也就是介於記錄層和金屬反射層間的一 層’經發現其最佳的厚度範圍是在1 〇和5 〇毫微米間，最好
第9頁 479257
疋"於2 0到4 〇毫微米。當該層太薄時，對記錄層和金屬反 f層間的隔熱會有不良的影響。結果將是記錄層的冷卻率 增=而導致減緩結晶過程和循環性不佳。冷卻率可藉由增 加第二介電層的厚度而獲得降低。 如果金屬反射層的厚度在2 〇到2 〇 〇毫微米範圍之間，則 CET值對该層的厚度並不敏感。但如果金屬反射層比毫 微米更薄時，循環性會因冷卻率太低而有不良的影響。如 果孟屬反射層為1 6 0耄微米或更厚，則循環性將更亞化， 且記錄和抹除功率必定因熱傳導的增加而變高。合:’ 層的厚度最好介於8 〇到1 2 0毫微米間。 ” 于 第一和第二介電層可以由ZnS*Sl〇2混合製成的，如 (ZnS)8G(Sl〇2)2G。另外，可替代的選擇如 S：i〇2，了 i〇 7 〇 AIN，Si3N4和丁a2〇5。最好是使用一碳化物，如2’ 11 ，
TaC； ZrC或TlC。這些材料比一個ZnS-Si〇2混合物更处’ 供鬲結晶化的速度與更好的循環性。 月匕 金屬反射層可以用以下的金屬製成，如Α1， τ. Α:::Ρΐ，Λά’Nl，Cr’M。，w'°Ta，以及包括這u此全 屬的合金。適合的合金如Α1Ή， A1Cr^〇A1Ta等。 二至 作反射層和介電層二者皆可以氣相沈積和爽鍍的方式製 貧訊媒體的基材
JtL 〜，久仅」牙透的，j 如聚碳酸醋（？〇1^3]：1)〇1^1^)，聚曱基丙烯酸甲^ (polymethyl methacrylate) (PMMA) ^ 曰 曰 (amorphous polyolefin)或玻璃樂〗成的。 ^ ^ 衣风的一個典
479257 五、發明說明（7) 是，基材是碟形而直徑有1 2 0毫米且厚度為0 . 1， 0 . 6或1. 2 毫米。當使用0. 6毫米或1. 2毫米的基材時，可從第一介電 層，記錄層等開始塗覆到基材上。雷射光束經由基材的進 入面進入堆疊層。在基材上的堆疊層也可以相反的次序塗 覆（反轉薄膜相位改變堆疊），也就是從金屬反射層，第二 介電層，相變化層等開始。最後介電層（現在是第一介電 層）接著被覆上一個厚度0. 1毫米（1 0 0 // m)光學材質的透明 覆蓋層或上述其中一種材料的薄板。雷射光束則是經由此 透明層的進入面進入堆疊層。這樣的一個薄層允許一個高 數值孔徑之接物透鏡的雷射光束進入，例如數值孔徑 (Ν· A.)二0· 85。 或者，基材的型態可以是一個柔動的合成樹脂帶，例如 由聚酯薄膜所製成。這樣的一個光學帶將可用於光學帶記 錄器上，該記錄器，舉例來說，是以一個快速旋轉的多邊 形為基礎。這種裝置上反射的雷射光束可對光學帶表面做 橫向的掃描。 在記錄層這邊的碟形基材的表面，最好能有一個可以被 光學掃描的伺服道。該伺服道通常是由螺旋狀的溝紋所構 成並且是利用一個模子射出成型或壓製在基材上形成的。 這個溝紋也可用複製的方法在合成樹脂層上形成，例如單 獨提供一個丙烯酸鹽的U V光硬化層在基材上。在高密度記 錄中，這樣的一個溝紋有一個如0 . 7 - 0 . 8微米的節距和0 . 5 微米的寬度。 也可選擇利用一個保護層，如UV光硬化的聚曱基丙烯酸
第11頁 479257 五、發明說明（8) 甲酯丄將堆疊的最外層與環境相隔離。 例古的Λ錄和抹除可利用—個短波長的雷射來達成， 例如67 5笔敁米或更短的波長（紅 相變化記錄層可藉由蒗5 ★ 士 π ^ A, …、乳/尤積和濺鍍適當靶材的方式塗 覆依這樣的沈積方式該記錄層會是非結晶性的 射狀態。為了形成-個適合的並擁有 :稱為初；：層支貝Js亥層必須首先被完全結晶& ’這通常 1埶到π i a。’坆個目的，可將記錄層置於一個鎔爐内
Te合金的結晶溫度如献。- 個合成树脂的基材，如¥ # 雷射光束來加Μ，這是；m旨’或可選擇用足夠功率的 器中，利用雷射光束掃描移；’例如在一個記錄 被局部加熱到可使該層結；：記錄Η後非結晶相層 到不利的熱負荷。 ΒΒ化的溫度’而且不會讓基材受 若需要的話’在基材和第—八 薄的r金屬層，藉此形 ::電層之間可插入另外-層 構變得更複雜，但該額外的：：謂的『I川|結構。雖然結 和光學對比度。 ”屬層可增加記錄層的冷部率 當上述材料被利用在— 晶速度可進-步提昇，η 堆疊中，結 物，或最好是-個碳化物。在…氮化物，-個氧化 夾在二個額外的1+層之間。帛坆個堆疊中’記錄層ρ是被 最好是W，此TaC，Tl&；^第二碳化物層的碳化物 兼備了極優的猶環性和短的c=其中的-種，這類破化物 值。SiC因為其光學上的、
479257 五、發明說明（9) 機械上的和熱的特性，是較偏姑· ,.^ ^ ^ A 权侷好的材枓，而且，它的價格 也比較便宜。實驗顯示一個Π+ p τ+ τ M烚田 IPIM堆疊的CET值的60%。 ΠΡΙ IM堆愛⑽丁值是低於 ，外的碳化物層的厚度最好在2到8毫微米之間。當這個 ,.^ m UL ^ , 丁 ^又阿的蜍煞性對堆疊僅會有很 小的影響，因此有助於堆疊的熱設計。 本發明將更詳盡的藉由示節的呈卿每 W^ ^ 秸丁軛的具體貫施例來說明，關於 附圖，其中 =1是三角形的三元組合物圖的一部份，Ge_sb_Te以 子百分比計， 圖2是一個依照本發明製作的伞 ^ ^ ^ η衣作的先學貪訊媒體概要的橫斷 面圖，以及 圖3是一個代表G e (以原子百八μμ 4、 认一-々入仏门 尽于百刀比叶）和Sb/Te(原子比例） 的二兀組合物圖的一部份。 範例1到8 (根櫨太螢明） 圖2概要地顯示一個根據本發明 的-部份。參考數字i表示一個直徑干二九平二、：真 米的聚碳酸酯碟形基材。基材i ^固纴槿^ %的^ IPIM堆疊： 戰了一個結構如下的 2 >^20 記錄層（P) 3為一個厚度2δ毫微米 第二介電層⑴為厚度25毫微米的（Zns) 金屬反射層（M)5為厚度100毫微米的八丨8。0 2 20 所有各層都是以賤鍍的方式製作。記錄層3最初的結晶 -第：！電…層⑴2為厚度90毫微米的(靴(Sl〇
479257 五、發明說明（10) ----- 質狀態是藉由在一個記錄器中，加熱類沉殿 (a s - d e p 〇 s i t e d)非結晶質合金所獲得，利用該記錄界、以_ 於結晶化溫度的雷射光束持續對記錄層加熱。 ° L阿 一個供記錄，再生和抹除資訊用的雷射光束，經由基材 1進入記錄層3。這個光束是由圖示的箭頭6所表示。非辞 晶相記號是以功率Pw=l· 25Pm(Pm =溶解臨界功率mel tin§ threshold power)和持續100毫微秒的單雷射脈衝所寫 入。抹除功率為Pw / 2。 表1總結本發明範例的結果，其中Ge-Sb-Te合金的組成 成分已被改變。 表1 範例 CE 丁値 (毫微秒） Ge (原子百分比） Sb (原子百分比） Te (原子百分比） 1 48 23.70 20.48 55.82 ^ 2 45 22.80 20.89 56.31 3 47 23.90 19.69 56.41 4 46 22.05 21.34 56.61 5 44 21.55 21.55 56.90 6 48 20.80 21,60 57.60 〜· 7 46 20.40 22.29 57.31 8 47 22.50 21.58 22.92 範例1到8是位在圖1和圖3中的ABCDE五角形區域内。五角 形的頂點A， B， C， D和E代表專利範圍第1項中所指的合 金。圖1是整個二角形Ge_Sb-Te二元組合物圖的^一部份。 該圖有頂點Te (100% Te)，化合物GeTe (50% Ge， 50%
第14頁 479257
五、發明說明（11)
ie，〇%Sb)，和組合物〇%Ge，50%Sb，50%Te。化合物 k^bJe^GhuSb22 je55 6以原子百分比計）位在連^士化人 GeTe和Sb2Te3的連接線（虛線）上。 σ σ 圖3是不同格式的一個放大的成分圖。縱軸標示g㊀含量 (以原子百分比計），而橫軸表示Sb/ Te的原子比例。二^ 顯示圖1連接線的一部份，以及化合物。頂點〔°是 位在連結Te和GhSbJe5的連接線上。根據本發明的範例广 到8在ABCDE五角形區域中是以X記號標示。 最低的CET值是位在連結Te和(；62讣2了65的連接線（虛線）
上，但在ABCDE五角形區域之内，如表1中的範例5。藉由 添加Te到純GeJhTe5中，組合物沿著連結這二個終點9的連 接線從Ge2Sb2Te5向丁6移動，對應組合物：（Ge2Sb2Te〇 Te 。如果χ=ο. 〇〇，即，純化合物Ge2sb2Te5，CET值等於g毫e‘x 微秒。在添加少量的Te(x = 〇· 01)之後，CET值降到低於^ 爱微秒° CET值維持低於5 〇毫微秒直到χ = 〇 . 4 3 (GhuSbaJe5"，以原子百分比計），這對應到圖丄和圖3 中的頂點c。如果xs0.02*0.35間，cn值甚至維 4 5毫微秒。範例§ ( X - π 9 q/η圭 ^ ^ 一 祀妁3 m 2 3 )位在這個連接線上。 比較的i圾liiliLlLi艮據本發明）
479257 五、發明說明（12) 表2總結非根據本發明的範例結果。 範例 CET値 (毫微秒） Ge (原子百分比） Sb (原子百分比） Te (原子百分比） 9 66 24.00 22.29 53.71 10 125 25.60 21.60 52.80 11 60 25.30 19.53 55.17 12 63 24.30 21.00 54.70 13 56 22.70 22.20 55.10 14 54 22.10 23.00 54.90 這些範例顯示CET值皆高於50毫微秒。組合物位在ABCDE 五角形區域外，並在圖3中以點•表示。 本發明提供了一個CET值5 0毫微秒或更低的可重寫入相 變化光學資訊媒體，該媒體是適合於直接覆寫和高速記 錄，如DVD + RW，DVD-red 和DVD -blue。
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第16頁 479257 圖式簡卓說明 <1 第17頁

Claims (1)

  1. 479257 六、申請專利範圍 1 · 一種透過雷射光束而可供高速記錄的可重寫入光學資· 訊媒體，該媒體包括一個承載堆疊層的基材，而該堆疊依 順序包括：一個第一介電層，一個包含由G e，S b和T e合金 所構成的相變化材料的記錄層，一個第二介電層和一個金 屬反射層，其特徵為： - 該合金的組成成分依原子百分比是定義在Ge-Sb-Te 三元組合物圖中某一區域内，該區域為一個五角形區域， 其五個頂點如下： G e24 6 Sb20 2 T e55 2 (A) Ge23. 5 S b19 2 T e57. 3 (B) Ge20. 5 Sb20 5 T e59 0 (C) Ge18. 8 Sb22 6 T e58 6 (D) G e2〇. i Sb23 7 丁 e56. 2 (E) -第一介電層的厚度為70到（70+λ/2η)毫微米，其中 λ是雷射光束的波長，η是本層的折射率； -記錄層的厚度為1 0到3 5毫微米； - 第二介電層的厚度為1 0到5 0毫微米； - 金屬反射層的厚度為6 0到1 6 0毫微米。 2. 根據申請專利範圍第1項之光學資訊媒體，其特徵是 合金的成分如下： (Ge2Sb2Te5)卜 xTex 其中莫耳分率符合：0.01Sx^0.43，最好0.02$xS 0.35。 3. 根據申請專利範圍第1項之光學資訊媒體，其特徵是
    第18頁 479257 六、申請專利範圍 記錄層的厚度介於2 0到3 5毫微米，最好是介於2 5到3 5毫微· 米。 4 ·根據申請專利範圍第1項之光學資訊媒體，其特徵是 第二介電層的厚度介於2 0到4 0毫微米。 5 ·根據申請專利範圍第1項之光學資訊媒體，其特徵是 金屬反射層的厚度介於8 0到1 2 0毫微米。 6.根據申請專利範圍第1項之光學資訊媒體，其特徵是 金屬反射層至少包含以下的一項金屬，Al， Ti， Au， Ag， Cu， Pt，Pd， Ni， Cr，Mo， W和Ta，以及包括這些金屬的 合金。 7 ·根據申請專利範圍第1項之光學資訊媒體，其特徵是 基材是一個碟片或是一個帶子。 8. 根據申請專利範圍第1項之光學資訊媒體，其特徵是 記錄層被夾在二個額外的碳化物層之間，而兩者的厚度都 是介於2到8毫微米。 9. 一個使用前述申請專利範圍中任一項供高速記錄用的 光學資訊媒體，其雷射光束與媒體的相對速度至少為 7.2m/s 〇
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CA2353587A1 (en) 2001-04-12
DE60004163D1 (de) 2003-09-04
JP2003511267A (ja) 2003-03-25
KR20010093135A (ko) 2001-10-27
EP1135774A1 (en) 2001-09-26
KR100662671B1 (ko) 2007-01-02
HK1040809A1 (zh) 2002-06-21
EP1135774B1 (en) 2003-07-30
CN1327581A (zh) 2001-12-19
CN1199164C (zh) 2005-04-27
DE60004163T2 (de) 2004-06-09

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