TW472291B - Zone controlled radiant heating system utilizing focused reflector - Google Patents
Zone controlled radiant heating system utilizing focused reflector Download PDFInfo
- Publication number
- TW472291B TW472291B TW089123724A TW89123724A TW472291B TW 472291 B TW472291 B TW 472291B TW 089123724 A TW089123724 A TW 089123724A TW 89123724 A TW89123724 A TW 89123724A TW 472291 B TW472291 B TW 472291B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- controller
- substrate
- patent application
- scope
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24D—DOMESTIC- OR SPACE-HEATING SYSTEMS, e.g. CENTRAL HEATING SYSTEMS; DOMESTIC HOT-WATER SUPPLY SYSTEMS; ELEMENTS OR COMPONENTS THEREFOR
- F24D9/00—Central heating systems employing combinations of heat transfer fluids covered by two or more of groups F24D1/00 - F24D7/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Plasma Technology (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/436,681 US6259072B1 (en) | 1999-11-09 | 1999-11-09 | Zone controlled radiant heating system utilizing focused reflector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW472291B true TW472291B (en) | 2002-01-11 |
Family
ID=23733396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089123724A TW472291B (en) | 1999-11-09 | 2000-11-09 | Zone controlled radiant heating system utilizing focused reflector |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6259072B1 (enExample) |
| EP (1) | EP1100114A3 (enExample) |
| JP (1) | JP4868193B2 (enExample) |
| KR (1) | KR100674764B1 (enExample) |
| TW (1) | TW472291B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111326396A (zh) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 处理晶圆的等离子体处理系统 |
| US10937672B2 (en) | 2015-10-09 | 2021-03-02 | Beijing Naura Microelectronics Equipment Co., Ltd. | Heating device and heating chamber |
Families Citing this family (42)
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| US6333493B1 (en) * | 1999-09-21 | 2001-12-25 | Kabushiki Kaisha Toshiba | Heat treating method and heat treating apparatus |
| JP4698807B2 (ja) * | 2000-09-26 | 2011-06-08 | 東京エレクトロン株式会社 | 半導体基板熱処理装置 |
| US6492625B1 (en) * | 2000-09-27 | 2002-12-10 | Emcore Corporation | Apparatus and method for controlling temperature uniformity of substrates |
| US6761796B2 (en) * | 2001-04-06 | 2004-07-13 | Axcelis Technologies, Inc. | Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing |
| KR100426274B1 (ko) * | 2001-08-02 | 2004-04-08 | 피에스케이 주식회사 | 램프가열을 이용한 반도체 웨이퍼 애싱장치 및 방법 |
| US20030029859A1 (en) * | 2001-08-08 | 2003-02-13 | Applied Materials, Inc. | Lamphead for a rapid thermal processing chamber |
| KR20030065217A (ko) * | 2002-01-31 | 2003-08-06 | 삼성전자주식회사 | 웨이퍼 척 및 이를 포함하는 웨이퍼 가공 장치 |
| KR100481180B1 (ko) * | 2002-09-10 | 2005-04-07 | 삼성전자주식회사 | 포토레지스트 제거방법 |
| US6947665B2 (en) * | 2003-02-10 | 2005-09-20 | Axcelis Technologies, Inc. | Radiant heating source with reflective cavity spanning at least two heating elements |
| US20040265409A1 (en) * | 2003-05-21 | 2004-12-30 | Stephen Keeley | Closed loop oven control system and method |
| US20040235299A1 (en) * | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
| US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
| US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
| US7892357B2 (en) * | 2004-01-12 | 2011-02-22 | Axcelis Technologies, Inc. | Gas distribution plate assembly for plasma reactors |
| US20050247266A1 (en) * | 2004-05-04 | 2005-11-10 | Patel Nital S | Simultaneous control of deposition time and temperature of multi-zone furnaces |
| US20050250346A1 (en) * | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
| US8615886B1 (en) * | 2004-05-06 | 2013-12-31 | Winthrop D. Childers | Shaving system with energy imparting device |
| US7521653B2 (en) * | 2004-08-03 | 2009-04-21 | Exatec Llc | Plasma arc coating system |
| JP2006073895A (ja) * | 2004-09-03 | 2006-03-16 | Canon Inc | 冷却装置、露光装置及びデバイス製造方法 |
| US20060251827A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
| US20060249175A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
| CN101389953B (zh) * | 2006-02-28 | 2012-05-16 | 丰田自动车株式会社 | 用于配备有加热器的传感器的温度控制设备 |
| US7655933B2 (en) * | 2006-08-15 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
| US8450193B2 (en) * | 2006-08-15 | 2013-05-28 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
| WO2008144658A1 (en) * | 2007-05-17 | 2008-11-27 | Exatec, Llc | Apparatus and method for depositing multiple coating materials in a common plasma coating zone |
| US7848840B2 (en) * | 2008-01-04 | 2010-12-07 | Applied Materials, Inc. | Method of controlling process parameters for semiconductor manufacturing apparatus |
| US20090194024A1 (en) * | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
| JP5169299B2 (ja) * | 2008-02-22 | 2013-03-27 | 株式会社デンソー | 半導体製造装置 |
| JP5236591B2 (ja) * | 2009-08-04 | 2013-07-17 | 株式会社アルバック | プラズマ処理装置 |
| US8548312B2 (en) | 2010-02-19 | 2013-10-01 | Applied Materials, Inc. | High efficiency high accuracy heater driver |
| US10504719B2 (en) * | 2012-04-25 | 2019-12-10 | Applied Materials, Inc. | Cooled reflective adapter plate for a deposition chamber |
| WO2015112969A1 (en) | 2014-01-27 | 2015-07-30 | Veeco Instruments. Inc. | Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems |
| US10067006B2 (en) | 2014-06-19 | 2018-09-04 | Elwha Llc | Nanostructure sensors and sensing systems |
| KR101605717B1 (ko) | 2014-07-16 | 2016-03-23 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US10763142B2 (en) | 2015-06-22 | 2020-09-01 | Lam Research Corporation | System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter |
| US9779974B2 (en) | 2015-06-22 | 2017-10-03 | Lam Research Corporation | System and method for reducing temperature transition in an electrostatic chuck |
| US10386821B2 (en) | 2015-06-22 | 2019-08-20 | Lam Research Corporation | Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values |
| US10381248B2 (en) * | 2015-06-22 | 2019-08-13 | Lam Research Corporation | Auto-correction of electrostatic chuck temperature non-uniformity |
| US9826574B2 (en) * | 2015-10-28 | 2017-11-21 | Watlow Electric Manufacturing Company | Integrated heater and sensor system |
| JP6512089B2 (ja) * | 2015-12-15 | 2019-05-15 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理装置の調整方法 |
| WO2022036088A1 (en) | 2020-08-12 | 2022-02-17 | Watlow Electric Manufacturing Company | Method and system for providing variable ramp-up control for an electric heater |
| CN115985754A (zh) * | 2022-12-01 | 2023-04-18 | 中国原子能科学研究院 | 离子源 |
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| JPS61196515A (ja) * | 1985-02-26 | 1986-08-30 | Mitsubishi Electric Corp | 帯域溶融型半導体製造装置 |
| US4680451A (en) * | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
| US4640224A (en) * | 1985-08-05 | 1987-02-03 | Spectrum Cvd, Inc. | CVD heat source |
| US4981815A (en) | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
| US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
| US5179677A (en) | 1990-08-16 | 1993-01-12 | Applied Materials, Inc. | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
| US5446825A (en) | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
| US5436172A (en) * | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
| US5268989A (en) | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
| JP3195678B2 (ja) * | 1993-01-22 | 2001-08-06 | 東京エレクトロン株式会社 | エネルギー線加熱装置 |
| JPH0637009A (ja) * | 1992-07-14 | 1994-02-10 | Fujitsu Ltd | アッシング装置 |
| US5418885A (en) * | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
| US5561612A (en) * | 1994-05-18 | 1996-10-01 | Micron Technology, Inc. | Control and 3-dimensional simulation model of temperature variations in a rapid thermal processing machine |
| JPH08167590A (ja) * | 1994-12-13 | 1996-06-25 | Dainippon Screen Mfg Co Ltd | プラズマアッシング方法 |
| US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
| US5850071A (en) * | 1996-02-16 | 1998-12-15 | Kokusai Electric Co., Ltd. | Substrate heating equipment for use in a semiconductor fabricating apparatus |
| ATE312955T1 (de) * | 1996-05-21 | 2005-12-15 | Applied Materials Inc | Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand |
| US5788799A (en) * | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
| US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
| EP0823492A3 (en) * | 1996-08-07 | 1999-01-20 | Concept Systems Design Inc. | Zone heating system with feedback control |
| US6122440A (en) * | 1999-01-27 | 2000-09-19 | Regents Of The University Of Minnesota | Optical heating device for rapid thermal processing (RTP) system |
-
1999
- 1999-11-09 US US09/436,681 patent/US6259072B1/en not_active Expired - Lifetime
-
2000
- 2000-11-03 EP EP00309762A patent/EP1100114A3/en not_active Withdrawn
- 2000-11-07 JP JP2000339066A patent/JP4868193B2/ja not_active Expired - Lifetime
- 2000-11-09 TW TW089123724A patent/TW472291B/zh not_active IP Right Cessation
- 2000-11-09 KR KR1020000066442A patent/KR100674764B1/ko not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10937672B2 (en) | 2015-10-09 | 2021-03-02 | Beijing Naura Microelectronics Equipment Co., Ltd. | Heating device and heating chamber |
| CN111326396A (zh) * | 2018-12-13 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | 处理晶圆的等离子体处理系统 |
| CN111326396B (zh) * | 2018-12-13 | 2023-03-24 | 夏泰鑫半导体(青岛)有限公司 | 处理晶圆的等离子体处理系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1100114A3 (en) | 2003-06-18 |
| EP1100114A2 (en) | 2001-05-16 |
| KR20010051571A (ko) | 2001-06-25 |
| JP2001203195A (ja) | 2001-07-27 |
| US6259072B1 (en) | 2001-07-10 |
| KR100674764B1 (ko) | 2007-01-25 |
| JP4868193B2 (ja) | 2012-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |