JP4868193B2 - プラズマ処理装置、温度制御装置及びその制御方法 - Google Patents

プラズマ処理装置、温度制御装置及びその制御方法 Download PDF

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Publication number
JP4868193B2
JP4868193B2 JP2000339066A JP2000339066A JP4868193B2 JP 4868193 B2 JP4868193 B2 JP 4868193B2 JP 2000339066 A JP2000339066 A JP 2000339066A JP 2000339066 A JP2000339066 A JP 2000339066A JP 4868193 B2 JP4868193 B2 JP 4868193B2
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temperature
controller
substrate
state
signal
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JP2001203195A5 (enExample
JP2001203195A (ja
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ウイリアム キンナード デビッド
ギル カルドソ アンドレ
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アクセリス テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24D—DOMESTIC- OR SPACE-HEATING SYSTEMS, e.g. CENTRAL HEATING SYSTEMS; DOMESTIC HOT-WATER SUPPLY SYSTEMS; ELEMENTS OR COMPONENTS THEREFOR
    • F24D9/00—Central heating systems employing combinations of heat transfer fluids covered by two or more of groups F24D1/00 - F24D7/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Vapour Deposition (AREA)
JP2000339066A 1999-11-09 2000-11-07 プラズマ処理装置、温度制御装置及びその制御方法 Expired - Lifetime JP4868193B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/436,681 US6259072B1 (en) 1999-11-09 1999-11-09 Zone controlled radiant heating system utilizing focused reflector
US436681 1999-11-09

Publications (3)

Publication Number Publication Date
JP2001203195A JP2001203195A (ja) 2001-07-27
JP2001203195A5 JP2001203195A5 (enExample) 2008-01-10
JP4868193B2 true JP4868193B2 (ja) 2012-02-01

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JP2000339066A Expired - Lifetime JP4868193B2 (ja) 1999-11-09 2000-11-07 プラズマ処理装置、温度制御装置及びその制御方法

Country Status (5)

Country Link
US (1) US6259072B1 (enExample)
EP (1) EP1100114A3 (enExample)
JP (1) JP4868193B2 (enExample)
KR (1) KR100674764B1 (enExample)
TW (1) TW472291B (enExample)

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US7848840B2 (en) * 2008-01-04 2010-12-07 Applied Materials, Inc. Method of controlling process parameters for semiconductor manufacturing apparatus
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JP5169299B2 (ja) * 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
JP5236591B2 (ja) * 2009-08-04 2013-07-17 株式会社アルバック プラズマ処理装置
US8548312B2 (en) 2010-02-19 2013-10-01 Applied Materials, Inc. High efficiency high accuracy heater driver
US10504719B2 (en) * 2012-04-25 2019-12-10 Applied Materials, Inc. Cooled reflective adapter plate for a deposition chamber
CN106030761B (zh) 2014-01-27 2019-09-13 威科仪器有限公司 用于化学气相沉积系统的晶片载体及其制造方法
US10067006B2 (en) 2014-06-19 2018-09-04 Elwha Llc Nanostructure sensors and sensing systems
KR101605717B1 (ko) 2014-07-16 2016-03-23 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US10381248B2 (en) * 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US10937672B2 (en) 2015-10-09 2021-03-02 Beijing Naura Microelectronics Equipment Co., Ltd. Heating device and heating chamber
US9826574B2 (en) * 2015-10-28 2017-11-21 Watlow Electric Manufacturing Company Integrated heater and sensor system
JP6512089B2 (ja) 2015-12-15 2019-05-15 東京エレクトロン株式会社 基板処理装置及び基板処理装置の調整方法
US11430639B2 (en) * 2018-12-13 2022-08-30 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Plasma processing system
JP2023537389A (ja) 2020-08-12 2023-08-31 ワットロー・エレクトリック・マニュファクチャリング・カンパニー 電気ヒータのための可変ランプアップ制御を行なうための方法及びシステム
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Also Published As

Publication number Publication date
KR20010051571A (ko) 2001-06-25
EP1100114A2 (en) 2001-05-16
TW472291B (en) 2002-01-11
KR100674764B1 (ko) 2007-01-25
US6259072B1 (en) 2001-07-10
JP2001203195A (ja) 2001-07-27
EP1100114A3 (en) 2003-06-18

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